JPH0214761B2 - - Google Patents
Info
- Publication number
- JPH0214761B2 JPH0214761B2 JP244282A JP244282A JPH0214761B2 JP H0214761 B2 JPH0214761 B2 JP H0214761B2 JP 244282 A JP244282 A JP 244282A JP 244282 A JP244282 A JP 244282A JP H0214761 B2 JPH0214761 B2 JP H0214761B2
- Authority
- JP
- Japan
- Prior art keywords
- lead wires
- pair
- thin film
- film thermistor
- external lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 24
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 本発明は薄膜サーミスタに関するものである。[Detailed description of the invention] The present invention relates to a thin film thermistor.
従来、例えば薄膜サーミスタチツプの電気的接
続は第１図に示すようにセラミツク絶縁体１で中
間部を固定された一対の相対する線状リード線
２，２′より成るリード線接続端子が用いられて
きた。この薄膜サーミスタチツプは平板状の絶縁
基板の表面に形成された感温抵抗体膜を含む感温
素体３およびこの感温素体３の両側に接続された
一対の内部リード線４，４′からなる。この内部
リード線４，４′は通常直径0.05〜0.2mmの白金細
線、金細線などが用いられている。このような薄
膜サーミスタチツプをリード線２，２′に接続し
た場合、内部リード線４，４′は前述の如き金属
細線であるので、機械的強度が小さいという欠点
があつた。このため、従来、第２図に示すよう
に、薄膜サーミスタチツプを硝子管５内に封入
し、さらに0.4〜0.6φのコバール線などの外部リ
ード線６，６′と内部リード線４，４′とを接続し
て機械的強度を向上していた。このとき外部リー
ド線６，６′は硝子管５と強固に封着されるので、
内部リード線４，４′は外部の機械的応力から保
護される結果、内部リード線４，４′は金属細線
で十分な実用性を有している。外部リード線６，
６′はリード線２，２′と機械的に強固に接続され
る。しかしこのような構造は複雑であり、価格が
高くなるという欠点があつた。また熱容量も大き
くなるので、熱応答性が遅くなるという欠点があ
つた。 Conventionally, for electrical connection of, for example, a thin film thermistor chip, a lead wire connection terminal consisting of a pair of opposing linear lead wires 2 and 2' whose intermediate portions are fixed with a ceramic insulator 1, as shown in FIG. 1, has been used. It's here. This thin film thermistor chip consists of a temperature sensing element 3 including a temperature sensitive resistor film formed on the surface of a flat insulating substrate, and a pair of internal lead wires 4, 4' connected to both sides of the temperature sensing element 3. These internal lead wires 4, 4' are usually made of thin platinum wire, thin gold wire, etc. with a diameter of 0.05 to 0.2 mm. When such a thin film thermistor chip is connected to the lead wires 2, 2', the internal lead wires 4, 4' are thin metal wires as described above, and therefore have a drawback of low mechanical strength. For this reason, conventionally, as shown in FIG. 2, a thin film thermistor chip is sealed in a glass tube 5, and external lead wires 6, 6' such as Kovar wires of 0.4 to 0.6φ and internal lead wires 4, 4' The mechanical strength was improved by connecting the At this time, the external lead wires 6, 6' are firmly sealed to the glass tube 5, so
Since the internal lead wires 4, 4' are protected from external mechanical stress, the internal lead wires 4, 4' are made of thin metal wires and have sufficient practicality. External lead wire 6,
6' is mechanically and firmly connected to the lead wires 2, 2'. However, such a structure has the drawbacks of being complicated and expensive. Furthermore, since the heat capacity becomes large, there is a drawback that the thermal response becomes slow.
本発明は上記従来の欠点を解消するもので、機
械的強度の向上とともに、構造が簡単で低価格と
なり、しかも熱応答性を良好とする薄膜サーミス
タを提供することを目的とする。 The present invention solves the above-mentioned conventional drawbacks, and aims to provide a thin film thermistor that has improved mechanical strength, has a simple structure, is inexpensive, and has good thermal response.
本発明は、平板状で細長い一対の外部リード線
を相対して配置し、前記一対の外部リード線の長
さ方向のほぼ中間部をセラミツク絶縁体で固定
し、前記一対の外部リード線のそれぞれの一端部
に互いに相対向して凹部を形成し、平板状絶縁基
板の表面に形成された感温抵抗体膜を含む感温素
体に一対の内部リード線を接続した薄膜サーミス
タチツプの端部を前記凹部に収納し、前記絶縁基
板の厚さと前記凹部の深さがほぼ等しくなるよう
にして、前記一対の内部リード線を前記一対の外
部リード線に接続したことを特徴とする。薄膜サ
ーミスタチツプはこの凹部に収納されるので、外
部から機械的応力が薄膜サーミスタチツプに印加
されてもリード線の凹部により機械的に保護され
るものである。 According to the present invention, a pair of flat and slender external lead wires are arranged opposite each other, a substantially intermediate portion in the length direction of the pair of external lead wires is fixed with a ceramic insulator, and each of the pair of external lead wires is The end of a thin film thermistor chip is formed with recesses facing each other at one end thereof, and a pair of internal lead wires are connected to a temperature sensing element including a temperature sensing resistor film formed on the surface of a flat insulating substrate. The device is characterized in that the pair of internal lead wires are connected to the pair of external lead wires by being housed in a recess so that the thickness of the insulating substrate and the depth of the recess are approximately equal. Since the thin film thermistor chip is housed in this recess, even if mechanical stress is applied to the thin film thermistor chip from the outside, it is mechanically protected by the recess of the lead wire.
以下本発明の一実施例について第３図および第
４図に基づき説明する。 An embodiment of the present invention will be described below with reference to FIGS. 3 and 4.
図において、ムライトからなるセラミツク絶縁
体１で一対の相対する平板状の外部リード線７，
７′の中間部を固定する。この平板状の外部リー
ド線７，７′はステンレス製（SUS−430）で板
厚t0.6mmでかつ相対する側の上端部に凹部８，
８′を形成する。薄膜サーミスタチツプは感温素
体３と白金製の内部リード線（直径φ0.1mm）４，
４′とからなり、凹部８，８′は薄膜サーミスタチ
ツプの端部を収納８，8′する形状である。この凹
部８，８′は絞り加工により、外部リード線７，
７′と一体的にかつ容易に形成することができる。
白金製の内部リード線４，４′とステンレス製か
つ平板状の外部リード線７，７′とはスポツト溶
接により接続する。このとき、凹部の深さは、薄
膜サーミスタチツプの平板状絶縁基板の厚さとほ
ぼ等しくなるように選ばれる。これにより内部リ
ード線４，４′と外部リード線７，７′との溶接作
業が容易になる。 In the figure, a pair of opposing flat external lead wires 7,
Fix the middle part of 7'. These flat external lead wires 7, 7' are made of stainless steel (SUS-430) and have a plate thickness of 0.6 mm, and have a recess 8 at the upper end of the opposite side.
8' is formed. The thin-film thermistor chip consists of a temperature-sensitive element 3 and a platinum internal lead wire (diameter φ0.1 mm) 4.
4', and the recesses 8, 8' are shaped to accommodate the ends of the thin film thermistor chips 8, 8'. The recesses 8, 8' are formed by drawing the external lead wires 7, 8'.
7' and can be easily formed.
The internal lead wires 4, 4' made of platinum and the flat external lead wires 7, 7' made of stainless steel are connected by spot welding. At this time, the depth of the recess is selected to be approximately equal to the thickness of the flat insulating substrate of the thin film thermistor chip. This facilitates the welding work between the internal lead wires 4, 4' and the external lead wires 7, 7'.
上記本実施例のように薄膜サーミスタチツプを
接続した薄膜サーミスタを落下試験（１ｍの高さ
からＰタイル上に自由落下）10回、および振動試
験（加速度1.5〜3G、振幅0.2〜3.2mm、周波数300
〜3600cpm）をＸ、Ｙ、Ｚ各方向において各２時
間実施したが異常は認められなかつた。なお、機
械的強度を一層向上するために、凹部８，８′で
薄膜サーミスタチツプの端部をリード線７，７′
に接着してもよい。 A thin film thermistor with a thin film thermistor chip connected as in this example above was subjected to a drop test (free fall from a height of 1 m onto a P tile) 10 times and a vibration test (acceleration 1.5 to 3 G, amplitude 0.2 to 3.2 mm, frequency 300
~3600 cpm) was carried out for 2 hours each in the X, Y, and Z directions, but no abnormality was observed. In order to further improve the mechanical strength, the ends of the thin film thermistor chip are connected to the lead wires 7, 7' in the recesses 8, 8'.
It may also be glued to.
以上の説明から明らかなように本発明の薄膜サ
ーミスタによれば次の効果が得られる。 As is clear from the above description, the thin film thermistor of the present invention provides the following effects.
(1) 薄膜サーミスタチツプは外部リード線の凹部
に収納されるので、従来の例えば第１図に示し
たものに比べ、外部の機械的応力に対して機械
的に保護され故障が生じにくい。(1) Since the thin film thermistor chip is housed in the recess of the external lead wire, it is mechanically protected from external mechanical stress and is less likely to malfunction, compared to the conventional one shown in FIG. 1, for example.
(2) 従来の保護構造に比較し、より簡単な構造で
あるので、薄膜サーミスタチツプと外部リード
線接続端子との接続がより簡単となり、経済的
である。(2) Since the structure is simpler than the conventional protection structure, the connection between the thin film thermistor chip and the external lead wire connection terminal is easier and more economical.
(3) 従来の保護構造に比べ、熱容量が小さいので
熱的応答性がより速くなる。(3) Compared to conventional protective structures, the thermal response is faster because the heat capacity is smaller.
第１図、第２図はそれぞれ従来の薄膜サーミス
タの正面断面図、第３図は本発明の薄膜サーミス
タの一実施例の正面断面図、第４図は同凹部周辺
の外観斜視図である。
１……セラミツク絶縁体、３……感温素体（薄
膜サーミスタチツプ）、７，７′……リード線、
８，８′……凹部。
1 and 2 are front sectional views of a conventional thin film thermistor, FIG. 3 is a front sectional view of an embodiment of the thin film thermistor of the present invention, and FIG. 4 is an external perspective view of the vicinity of the recess. 1... Ceramic insulator, 3... Temperature sensing element (thin film thermistor chip), 7, 7'... Lead wire,
8, 8'... recess.
Claims (1)
て配置し、前記一対の外部リード線の長さ方向の
ほぼ中間部をセラミツク絶縁体で固定し、前記一
対の外部リード線のそれぞれの一端部に互いに相
対向して凹部を形成し、平板状絶縁基板の表面に
形成された感温抵抗体膜を含む感温素体に一対の
内部リード線を接続した薄膜サーミスタチツプの
端部を前記凹部に収納し、前記絶縁基板の厚さと
前記凹部の深さがほぼ等しくなるようにして、前
記一対の内部リード線を前記一対の外部リード線
に接続して成る薄膜サーミスタ。 ２ 外部リード線をステンレス製とし、凹部を一
体的に形成してなる特許請求の範囲第１項記載の
薄膜サーミスタ。[Scope of Claims] 1. A pair of flat and slender external lead wires are arranged opposite each other, and a substantially intermediate portion in the length direction of the pair of external lead wires is fixed with a ceramic insulator, and the pair of external lead wires is An end of a thin film thermistor chip in which a pair of internal lead wires are connected to a temperature sensing element including a temperature sensing resistor film formed on the surface of a flat insulating substrate, with recesses facing each other formed at one end of each wire. a thin film thermistor, the pair of internal lead wires being connected to the pair of external lead wires such that a thickness of the insulating substrate and a depth of the recess are approximately equal to each other. 2. The thin film thermistor according to claim 1, wherein the external lead wire is made of stainless steel and the recess is integrally formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57002442A JPS58119602A (en) | 1982-01-11 | 1982-01-11 | Lead wire connecting terminal for detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57002442A JPS58119602A (en) | 1982-01-11 | 1982-01-11 | Lead wire connecting terminal for detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119602A JPS58119602A (en) | 1983-07-16 |
| JPH0214761B2 true JPH0214761B2 (en) | 1990-04-10 |
Family
ID=11529383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57002442A Granted JPS58119602A (en) | 1982-01-11 | 1982-01-11 | Lead wire connecting terminal for detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119602A (en) |
-
1982
- 1982-01-11 JP JP57002442A patent/JPS58119602A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58119602A (en) | 1983-07-16 |
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