JPH0215127B2 - - Google Patents
Info
- Publication number
- JPH0215127B2 JPH0215127B2 JP59026302A JP2630284A JPH0215127B2 JP H0215127 B2 JPH0215127 B2 JP H0215127B2 JP 59026302 A JP59026302 A JP 59026302A JP 2630284 A JP2630284 A JP 2630284A JP H0215127 B2 JPH0215127 B2 JP H0215127B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- circuit
- signal
- microwave
- circular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 230000010355 oscillation Effects 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 13
- 238000003780 insertion Methods 0.000 claims description 10
- 230000037431 insertion Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
- H03D9/0633—Transference of modulation using distributed inductance and capacitance by means of diodes mounted on a stripline circuit
- H03D9/0641—Transference of modulation using distributed inductance and capacitance by means of diodes mounted on a stripline circuit located in a hollow waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/0028—Structural aspects of oscillators based on a monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
- H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1864—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator
- H03B5/187—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device
- H03B5/1876—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a dielectric resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
- H03D9/0616—Transference of modulation using distributed inductance and capacitance by means of diodes mounted in a hollow waveguide
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
- H03D9/06—Transference of modulation using distributed inductance and capacitance
- H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes
- H03D9/0633—Transference of modulation using distributed inductance and capacitance by means of diodes mounted on a stripline circuit
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は衛星放送受信機等に用いられるマイク
ロ波ダウンコンバータに関するものである。近年
GaAsFET等のマイクロ波半導体デバイスの発展
により、マイクロ波集積回路等でのマイクロ波周
波数変換器が構成され、これと入力導波管を組み
合わせたSHFコンバータが実用化されようとし
ている。この場合SHFコンバータには周波数変
換のためのローカル発振回路をもつているが、
SHFコンバータではこのローカル発振回路から
のローカル信号輻射は他のマイクロ波機器に妨害
を与える恐れがあり、出来るだけ少ないことが望
まれている。同時にイメージ妨害に対しても強い
ことが必要とされる。本発明は、ローカル周波数
に対して遮断域、RF周波数に対して通過域を示
す導波管を用いることによりローカル信号輻射が
少なく、イメージ妨害特性の良好なマイクロ波周
波数変換装置を提供しようとするもである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a microwave down converter used in satellite broadcast receivers and the like. recent years
With the development of microwave semiconductor devices such as GaAsFET, microwave frequency converters have been constructed using microwave integrated circuits, and SHF converters that combine this with input waveguides are about to be put into practical use. In this case, the SHF converter has a local oscillation circuit for frequency conversion, but
In the SHF converter, this local signal radiation from the local oscillation circuit may cause interference to other microwave equipment, so it is desirable to reduce it as much as possible. At the same time, it is also required to be strong against image interference. The present invention aims to provide a microwave frequency conversion device with less local signal radiation and good image disturbance characteristics by using a waveguide that exhibits a cutoff region for local frequencies and a passband for RF frequencies. It is also.
従来例の構成とその問題点
以下に従来例を第1図a,bに示す。第1図a
で1は矩形導波管(WR75)、3はマイクロ波集
積回路(MIC回路)で、4,5はその中心矩形
導体及び接地導体で、接地導体5は導波管1のH
面の内壁に接しており、導波管とMIC回路3と
はリツジ導波管2により結合されている。導波管
1からのRF信号は、第1図bに示すMIC回路3
に構成されたマイクロ波周波数変換回路でIF信
号に変換される。第1図bのMIC回路3では、
導波管1からのRF信号はMIC回路の中心導体4
に結合され、直流阻止コンデンサ6を通り
GaAsFET増幅器7に加えられ、直流阻止コンデ
ンサ11を経て、ダブルバランスミキサ回路12
に加えられる。同時に、誘電体共振器17により
安定化されたGaAsFET発振器16の発振出力を
前記のダブルバランスミキサ回路に加え、混合出
力としてのIF信号15より取り出している。こ
こで、9,18はドレイン抵抗、19はソース抵
抗、20は終端用抵抗で、8,21はドレイン印
加用電圧端子、10はゲート電圧端子で、13,
14はミキサダイオードである。いま、マイクロ
波周波数変換器として、入力RF信号12GHz帯、
ローカル発振周波数10.7GHz、IF周波数1GHz帯の
SHFダウンコンバータを考えると、SHFコンバ
ータの性能の一つにローカル周波数の入力側への
輻射及びイメージ妨害特性はこれからの衛生放送
時代に対して厳しく押える必要がある。Configuration of conventional example and its problems A conventional example is shown below in FIGS. 1a and 1b. Figure 1a
1 is a rectangular waveguide (WR75), 3 is a microwave integrated circuit (MIC circuit), 4 and 5 are its center rectangular conductor and ground conductor, and ground conductor 5 is the H of waveguide 1.
The waveguide and the MIC circuit 3 are connected to each other by the ridge waveguide 2 . The RF signal from the waveguide 1 is sent to the MIC circuit 3 shown in Figure 1b.
It is converted into an IF signal by a microwave frequency conversion circuit configured as follows. In the MIC circuit 3 in Figure 1b,
The RF signal from waveguide 1 is transferred to the center conductor 4 of the MIC circuit.
and passes through a DC blocking capacitor 6.
It is added to the GaAsFET amplifier 7, passed through the DC blocking capacitor 11, and then the double balanced mixer circuit 12.
added to. At the same time, the oscillation output of the GaAsFET oscillator 16 stabilized by the dielectric resonator 17 is added to the double-balanced mixer circuit, and extracted from the IF signal 15 as a mixed output. Here, 9 and 18 are drain resistances, 19 is a source resistance, 20 is a termination resistor, 8 and 21 are drain application voltage terminals, 10 is a gate voltage terminal, 13,
14 is a mixer diode. Currently, as a microwave frequency converter, the input RF signal is in the 12 GHz band.
Local oscillation frequency 10.7GHz, IF frequency 1GHz band
Considering the SHF down converter, one of the SHF converter's performances is the radiation to the input side of the local frequency and the image interference characteristics, which must be strictly controlled for the coming era of satellite broadcasting.
しかしながら、従来例の構成では、MIC回路
の入力の一部が導波管内にあるため、ローカル発
振出力のMIC回路の入力側へのもれが、リツジ
導波管を介さず直接導波管内に輻射していくこと
が考えられる。また、一般に矩形導波管1は
WR75が用いられる事が多く、この場合、導波管
WR75はローカル発振周波数10.7GHz近傍では通
過域であるため一度、導波管内にもれるとそのま
まSHFアンテナを通して自由空間に輻射され妨
害となる。この対策として、導波管1内に帯域通
過フイルターや、ローカルトラツプフイルタを構
成する場合があるが、これはフイルタ挿入による
挿入損失を生じ、コンバータのN.Fを劣化させる
とともにフイルタ構成のため導波管長がかなり大
きくなり、SHFコンバータ全体として大きなも
のになつてしまう。また、導波管とMIC回路の
結合にリツジ回路を用いた場合、広帯域な導波管
−MIC回路変換を得ようとすると、リツジ導波
管の段数が多く必要で、そのため全長が長くな
る。また導波管1とMIC回路3とは直流的に直
結しているのでMIC回路の初段は必ず直流阻止
用コンデンサ6が必要であり、これの挿入による
押入損失もコンバータのN.Fを劣化する要因にな
る。 However, in the conventional configuration, a part of the input of the MIC circuit is inside the waveguide, so the local oscillation output leaks into the input side of the MIC circuit directly into the waveguide without going through the rigid waveguide. It is possible that it radiates. In addition, generally the rectangular waveguide 1 is
WR75 is often used, in which case the waveguide
Since WR75 is in the passband near the local oscillation frequency of 10.7GHz, once it leaks into the waveguide, it is radiated directly into free space through the SHF antenna, causing interference. As a countermeasure against this, a bandpass filter or a local trap filter may be configured in the waveguide 1, but this causes insertion loss due to the insertion of the filter, deteriorating the NF of the converter, and the waveguide due to the filter configuration. The pipe length becomes considerably large, and the SHF converter as a whole becomes large. Furthermore, when a rigid circuit is used to couple the waveguide and the MIC circuit, in order to achieve broadband waveguide-MIC circuit conversion, a large number of stages of the rigid waveguide are required, which increases the overall length. In addition, since the waveguide 1 and the MIC circuit 3 are directly connected in terms of DC, a DC blocking capacitor 6 is always required at the first stage of the MIC circuit, and the insertion loss due to insertion of this capacitor is also a factor that deteriorates the NF of the converter. Become.
発明の目的
本発明は上記従来の問題点を解消するもので、
ローカル信号輻射が少なく、イメージ妨害特性が
良く、構成が簡単な広帯域の導波管−MIC回路
変換を備え、非常にコンパクトで、量産性に富む
マイクロ波周波数変換装置を提供することを目的
とする。Purpose of the invention The present invention solves the above-mentioned conventional problems.
The purpose of the present invention is to provide a microwave frequency conversion device that is extremely compact and easily mass-produced, with low local signal radiation, good image disturbance characteristics, and easy-to-configure broadband waveguide-to-MIC circuit conversion. .
発明の構成
本発明はマイクロ波周波数変換回路のローカル
発振周波数を遮断域とし、RF帯域を通過域とす
る導波管をRF入力部に用い、前記導波管の他端
を短絡するとともに、マイクロ波集積回路を導波
外壁上に前記導波管の短絡面から入力側に沿つて
固着し、マイクロ波集積回路の一端より前記導波
管の短絡面近傍に金棒ポストを挿入して導波管と
マイクロ波集積回路を結合さすことにより、ロー
カル信号輻射の少ない、イメージ阻止特性の良好
でSHFコンバータ等で非常にコンパクトな構成
のマイクロ波周波数変換装置を提供するものであ
る。Structure of the Invention The present invention uses a waveguide with the local oscillation frequency of a microwave frequency conversion circuit as a cutoff range and an RF band as a passband as an RF input section, short-circuits the other end of the waveguide, and A wave integrated circuit is fixed on the waveguide outer wall from the short-circuit surface of the waveguide along the input side, and a metal bar post is inserted from one end of the microwave integrated circuit near the short-circuit surface of the waveguide to complete the waveguide. By combining a microwave integrated circuit with a microwave integrated circuit, it is possible to provide a microwave frequency conversion device with a very compact configuration such as an SHF converter, which has low local signal radiation, good image blocking characteristics, and the like.
実施例の説明
第2図a,bは本発明の第1の実施例における
マイクロ波周波数変換装置を示すものである。第
2図a,bにおいて、22はローカル信号を遮断
域とし、RF信号を通過域とする矩形導波管でそ
の断面寸法はa≒14、b≒7である。12はマイ
クロ波集積回路3から導波管22の短絡面近傍に
挿入した金属ポストで導波管22とマイクロ波集
積回路3とを結合する。24は円筒形のテフロン
棒で、導波管22にあけられた金属ポストの挿入
孔25に挿入され、金属ポスト23と導波管22
とを直流的に絶縁するとともに、部分的に同軸線
路を形成し、そのインピーダンスを50Ω近くにし
ている。26はマイクロ波集積回路の入力部の金
属ポスト挿入部の接地導体面にあけられた金属ポ
スト23と同心円状に設けた円板孔で、その径を
前記25のテフロン棒挿入用導波管孔の径より小
さく、マイクロ波集積回路3のマイクロストリツ
プ線路の中心導体4の幅より少し大きくしてい
る。29,30はマイクロ波集積回路に設けた
RF増幅回路、31はミキサ回路、32はローカ
ル発振回路で、33は安定化発振用誘電体共振器
で、28はマイクロ波集積回路用シールドケース
27上に設けられたローカル発振周波数調整用ビ
スである。DESCRIPTION OF EMBODIMENTS FIGS. 2a and 2b show a microwave frequency conversion device in a first embodiment of the present invention. In FIGS. 2a and 2b, 22 is a rectangular waveguide having a cutoff region for local signals and a passband for RF signals, and its cross-sectional dimensions are a≈14 and b≈7. A metal post 12 is inserted from the microwave integrated circuit 3 into the vicinity of the short-circuited surface of the waveguide 22, and connects the waveguide 22 and the microwave integrated circuit 3. 24 is a cylindrical Teflon rod, which is inserted into the insertion hole 25 of the metal post drilled in the waveguide 22, and is inserted into the insertion hole 25 of the metal post 23 and the waveguide 22.
In addition to galvanically insulating the cables, a coaxial line is partially formed, and its impedance is approximately 50Ω. Reference numeral 26 denotes a disc hole provided concentrically with the metal post 23 drilled in the ground conductor surface of the metal post insertion part of the input section of the microwave integrated circuit, and its diameter is set to the waveguide hole for inserting a Teflon rod in 25 above. , and slightly larger than the width of the center conductor 4 of the microstrip line of the microwave integrated circuit 3. 29 and 30 were installed in the microwave integrated circuit.
RF amplifier circuit, 31 is a mixer circuit, 32 is a local oscillation circuit, 33 is a dielectric resonator for stabilizing oscillation, and 28 is a local oscillation frequency adjustment screw provided on the shield case 27 for the microwave integrated circuit. be.
以上のように構成された第2図a,bの第1の
実施例によれば、導波管22からの入力RF信号
は金属ポスト23と、前記接地導体5に設けた円
板孔26の径を導波管孔25の径より小さくする
構成により広帯域(例えば、11.7GHz〜12.7GHz)
で線路変換による損失を少なくしてマイクロ波集
積回路3の入力端子4に供給される。この入力
RF信号は29,30の2段のRF増幅回路により
増幅され、31のミキサ回路と32のローカル発
振回路(発振周波数約10.7GHz)により周波数変
換してIF信号を取り出している。このような構
成では、ローカル発振信号のマイクロ波集積回路
の入力側にあつても導波管22をローカル信号に
対してカツトオフにしているため導波管内で減衰
するため導波管からの輻射が十分押えられる。ま
た、マイクロ波集積回路3を導波管3の短絡側よ
り入力側に構成しているのでマイクロ波集積回路
3の長さだけ長くする構成が全体を大きくするこ
となく取れるので、ローカル信号漏洩を導波管2
2内で十分減衰する事が簡単でコンパクトな構成
で可能となる。 According to the first embodiment of FIG. Broadband (for example, 11.7GHz to 12.7GHz) is achieved by making the diameter smaller than the diameter of the waveguide hole 25.
The signal is then supplied to the input terminal 4 of the microwave integrated circuit 3 after reducing the loss due to line conversion. this input
The RF signal is amplified by a two-stage RF amplifier circuit 29 and 30, and frequency converted by a mixer circuit 31 and a local oscillation circuit 32 (oscillation frequency approximately 10.7 GHz) to extract an IF signal. In such a configuration, even if the local oscillation signal is on the input side of the microwave integrated circuit, the waveguide 22 is cut off for the local signal, so the radiation from the waveguide is attenuated within the waveguide. It can be held down sufficiently. In addition, since the microwave integrated circuit 3 is arranged on the input side of the waveguide 3 rather than on the short-circuited side, it is possible to make the microwave integrated circuit 3 longer by the length of the microwave integrated circuit 3 without increasing the overall size, thereby reducing local signal leakage. waveguide 2
It is possible to achieve sufficient attenuation within 2 with a simple and compact configuration.
第2図cにマイクロ波集積回路3の構成例を示
す。同図で金属ポスト23からの信号は
GaAsFET等のマイクロ波半導体からなる29お
よび30のRF増幅段で増幅され、イメージ阻止
フイルタ34を経てミキサ回路31に供給され、
誘電体共振器33で安定化されたローカル発振器
32からのローカル発振信号と混合されてIF出
力44として取り出される。ここで、35と37
は初段および次段増幅器のゲートバイアス抵抗お
よび高周波チヨーク回路、36,38,39は初
段および次段増幅器および発振回路32のドレイ
ン抵抗および高周波チヨーク回路で、40,41
はそれぞれGaAsFET発振器32のソース抵抗と
高周波チヨーク回路およびゲート終端抵抗で、4
2,43は直流阻止回路である。このように同図
ではRF増幅回路、ミキサ回路、ローカル回路を
ほぼ直列に並べ、長方形基盤にコンパクトに構成
することにより、導波管との固着一体化を容易に
し、またゲート、ドレイン等の電源供給端子を一
方向にする事により生産上の作業性もよくしてい
る。 FIG. 2c shows an example of the configuration of the microwave integrated circuit 3. In the same figure, the signal from metal post 23 is
It is amplified by RF amplification stages 29 and 30 made of microwave semiconductors such as GaAsFET, and is supplied to the mixer circuit 31 via the image rejection filter 34.
It is mixed with the local oscillation signal from the local oscillator 32 stabilized by the dielectric resonator 33 and taken out as an IF output 44 . Here, 35 and 37
36, 38, 39 are the gate bias resistors and high-frequency choke circuits of the first-stage and next-stage amplifiers, 36, 38, and 39 are the drain resistors and high-frequency choke circuits of the first-stage and next-stage amplifiers and the oscillation circuit 32, and 40, 41
are the source resistance, high frequency choke circuit and gate termination resistance of the GaAsFET oscillator 32, respectively, and 4
2 and 43 are DC blocking circuits. In this figure, the RF amplifier circuit, mixer circuit, and local circuit are arranged almost in series and compactly configured on a rectangular board, making it easy to integrate with the waveguide and also providing power supply for gates, drains, etc. By making the supply terminal unidirectional, production efficiency is also improved.
第3図は本発明の第2の実施例を示すマイクロ
波周波数変換装置の側面からの断面図と導波管入
力側からの断面図である。 FIG. 3 is a sectional view from the side and a sectional view from the waveguide input side of a microwave frequency conversion device showing a second embodiment of the present invention.
同図において、第2図と同一番号は同一物を示
し、第2図の構成と異なるのは矩形導波管22の
代りに円形導波管45を用い、その直径Cを約16
mmφに選んでローカル発振周波数10.7GHzに対し
て遮断域を示し、12GHz帯のRF信号に対して通
過になるように選んでおり、これにより第2図の
実施例1と同様にローカル信号輻射の抑圧、イメ
ージ妨害特性の優れた性能が得られるとともに、
導波管45が円形なので矩形導波管に比べ量産的
に作り易く、また、円偏波の衛星放送等に対応す
るアンテナの1次放射器として円形導波管出力タ
イプのものも多く、そのような円形出力アンテナ
に対して整合性が良い。第3図で、46は円形導
波管45の短絡板であり、短絡板面から金属ポス
ト23までの距離は管内波長λgの1/4と1/8の間
の距離にして円形導波管45とマイクロ波集積回
路3との整合を良くし、47,48はシールドケ
ース27に設けた仕切り板で、RF増幅回路間お
よびRF増幅回路30とミキサ回路31間を分離
シールドし、各回路間の結合を出来るだけ小さく
するとともに、ローカル発振回路32からのロー
カル発振信号のRF段へのもどりを押えるように
している。また49は短絡板46固定するネジで
あり、50は短絡板46の中心付近に設けた入力
インピーダンスを調整する整合用ビスでマイクロ
波集積回路のGaAsFET等のバラツキによる導波
管45からみた入力インピーダンスのバラツキを
吸収している。51は導波管45の外部の側面に
マイクロ波集積回路3とほぼ垂直に設けた中間周
波増幅回路(IF増幅回路)でマイクロ波集積回
路のIF出力端子44と短い同軸線路52を導波
管シヤーシの貫通孔53を通して最短距離で結合
しており、これにより損失の少ない接続が出来る
とともに、マイクロ波周波数変換装置として非常
にコンパクトで小型に構成することが出来る。 In the same figure, the same numbers as in FIG. 2 indicate the same parts, and the difference from the configuration in FIG. 2 is that a circular waveguide 45 is used instead of the rectangular waveguide 22, and its diameter C is approximately 16
mmφ to show a cutoff range for the local oscillation frequency of 10.7 GHz, and to pass the RF signal in the 12 GHz band, thereby reducing the local signal radiation as in Example 1 in Figure 2. In addition to providing excellent performance in suppression and image disturbance characteristics,
Since the waveguide 45 is circular, it is easier to mass-produce than a rectangular waveguide, and many circular waveguide output types are used as the primary radiator of antennas that support circularly polarized satellite broadcasting. Good matching for circular output antennas such as In FIG. 3, 46 is a shorting plate of the circular waveguide 45, and the distance from the shorting plate surface to the metal post 23 is between 1/4 and 1/8 of the tube wavelength λg. 45 and the microwave integrated circuit 3, and 47 and 48 are partition plates provided in the shield case 27 to isolate and shield between the RF amplifier circuits and between the RF amplifier circuit 30 and the mixer circuit 31. The coupling is made as small as possible, and the return of the local oscillation signal from the local oscillation circuit 32 to the RF stage is suppressed. Further, 49 is a screw for fixing the shorting plate 46, and 50 is a matching screw provided near the center of the shorting plate 46 to adjust the input impedance, which is the input impedance seen from the waveguide 45 due to variations in GaAsFET etc. of the microwave integrated circuit. It absorbs the variation in Reference numeral 51 denotes an intermediate frequency amplification circuit (IF amplification circuit) installed on the external side of the waveguide 45 almost perpendicularly to the microwave integrated circuit 3, and connects the IF output terminal 44 of the microwave integrated circuit and a short coaxial line 52 to the waveguide. They are connected at the shortest distance through the through hole 53 of the chassis, which allows for a connection with less loss, and allows for a very compact and compact configuration as a microwave frequency converter.
第4図は本発明の第3図の実施例を示すマイク
ロ波周波数変換装置の側面からの断面図と導波管
入力側からみた入力断面図を示す。同図において
第3図と同一番号は同一物を示し、第3図と異な
るのは、円形導波管45の入力部に円形−矩形導
波管変換回路51を取り付け一体化、導波管入力
として矩形導波管でも可能にしたものである。円
形−矩形導波管変換回路54は、正方形型矩形導
波管55(a1≒15mm、b1≒18mm、d1≒12mm)と長
楕円型導波管56(円弧半径R≒10mm、b2≒13
mm、d2≒8mm)と矩形導波管57(WR75、a3≒
19.05mm、b3≒9.5mm)を縦続に接続して構成され
ており、これを第4図のように第3図の円形導波
管45の入力に接続することにより、円形導波管
(CR62)と矩形導波管(WR75)を12GHz管のRF
信号帯域(例えば11.7〜12.7GHz)において広帯
域に挿入損失の少ない導波管変換が出来、円形導
波管入力マイクロ波周波数変換装置を矩形導波管
入力に雑音指数等の性能を劣化させることなく簡
単に変換出来る。したがつて、このような小形の
円形−矩形変換回路54を第4図に示すように第
3図の円形導波管入力のマイクロ波周波数変換装
置に取りつけ一体化すれば、ローカル信号輻射を
押える円形導波管45の特長を生かし、かつ雑音
指数等の本来の性能を劣化させることなく矩形導
波管入力のマイクロ波周波数変換装置を簡単に構
成することが出来る。一般にマイクロ波パラボラ
アンテナ等では矩形導波管出力のものも多いの
で、このようなアンテナに対して十分対応出来
る。 FIG. 4 shows a sectional view from the side of the microwave frequency converter according to the embodiment of FIG. 3 of the present invention and an input sectional view from the waveguide input side. In the same figure, the same numbers as in FIG. 3 indicate the same parts, and the difference from FIG. This makes it possible even with a rectangular waveguide. The circular-rectangular waveguide conversion circuit 54 includes a square rectangular waveguide 55 (a 1 ≒ 15 mm, b 1 ≒ 18 mm, d 1 ≒ 12 mm) and an elongated elliptical waveguide 56 (arc radius R ≒ 10 mm, b 2 ≒13
mm, d 2 ≒ 8 mm) and rectangular waveguide 57 (WR75, a 3 ≒
19.05 mm, b 3 ≒ 9.5 mm) are connected in cascade, and by connecting this to the input of the circular waveguide 45 in Figure 3 as shown in Figure 4, the circular waveguide ( CR62) and rectangular waveguide (WR75) 12GHz tube RF
Waveguide conversion with low insertion loss can be performed over a wide signal band (e.g. 11.7 to 12.7 GHz), and circular waveguide input microwave frequency conversion equipment can be converted to rectangular waveguide input without deteriorating performance such as noise figure. It can be easily converted. Therefore, if such a small circular-to-rectangular conversion circuit 54 is attached and integrated with the circular waveguide input microwave frequency conversion device of FIG. 3 as shown in FIG. 4, local signal radiation can be suppressed. It is possible to easily configure a rectangular waveguide input microwave frequency converter by taking advantage of the features of the circular waveguide 45 and without degrading the original performance such as the noise figure. In general, many microwave parabolic antennas and the like have a rectangular waveguide output, so the antenna can be used satisfactorily for such antennas.
発明の効果
本発明のマイクロ波周波数変換装置はローカル
信号を遮断域とし、RF信号を通過域とする導波
管を用い、かつ、導波管外壁上にマイクロストリ
ツプ線路を固着し、導波管の一端を短絡してその
近傍で金属ポストによる導波管−マイクロストリ
ツプ線路変換を行うとともに、マイクロストリツ
プ線路を導波管の短絡面から入力側に構成するこ
とにより、ローカル信号輻射の少なく、イメージ
抑圧特性の良好な性能を得るとともに、非常に簡
単な構成でコンパクトなマイクロ波周波数変換装
置を得ることが出来、量産性を含めその実用的効
果は非常に大きい。Effects of the Invention The microwave frequency conversion device of the present invention uses a waveguide with local signals as a cutoff region and RF signals as a passband, and a microstrip line is fixed on the outer wall of the waveguide. By short-circuiting one end of the waveguide and performing waveguide-to-microstrip line conversion using a metal post near the short-circuit, and configuring the microstrip line from the short-circuited side of the waveguide to the input side, local It is possible to obtain a compact microwave frequency conversion device with a very simple configuration, with little signal radiation and good image suppression characteristics, and its practical effects including mass production are very large.
第1図a,bは従来のマイクロ波周波数変換装
置の斜視図及びマイクロ波集積回路の回路図、第
2図a,b,cは本発明の第1の実施例における
マイクロ波周波数変換装置の断側面図、正面図及
び回路図、第3図a,b、第4図a,bは第2、
第3の実施例におけるマイクロ波周波数変換装置
の断側面図及び正面図である。
3……マイクロ波集積回路、22……矩形導波
管回路、23……金属ポスト、45……円形導波
管、46……短絡板、51……IF増幅部、54
……円形−矩形導波管変換部。
Figures 1a and 1b are perspective views of a conventional microwave frequency converter and a circuit diagram of a microwave integrated circuit, and Figures 2a, b, and c are of a microwave frequency converter according to a first embodiment of the present invention. The cross-sectional side view, front view and circuit diagram, Fig. 3 a, b, Fig. 4 a, b are the second,
FIG. 7 is a cross-sectional side view and a front view of a microwave frequency converter in a third embodiment. 3... Microwave integrated circuit, 22... Rectangular waveguide circuit, 23... Metal post, 45... Circular waveguide, 46... Short circuit plate, 51... IF amplification section, 54
...Circular-rectangular waveguide conversion section.
Claims (1)
周波数のローカル信号を遮断域とする円形導波管
の一端を短絡し、導波管外壁上にマイクロストリ
ツプ線路を固着し、このマイクロストリツプ線路
の中心導体の一端から、前記導波管短絡面近傍に
金属棒を挿入し、前記マイクロストリツプ線路の
接地導体に設けた前記金属棒の挿入孔の径を前記
円形導波管での前記金属棒の挿入孔の径より小さ
くして、前記マイクロストリツプ線路と前記導波
管とを結合し、前記導波管からのRF信号を前記
マイクロストリツプ線路に構成したこのRF信号
より低い周波数のローカル発振回路、ミキサ回路
により周波数変換することを特徴とするマイクロ
波周波数変換装置。 2 円形導波管入力側に長楕円型導波管と正方形
型導波管による円形−矩形導波管装置を具備した
ことを特徴とする特許請求の範囲第1項記載のマ
イクロ波周波数変換装置。[Claims] 1 One end of a circular waveguide with an RF signal as a passband and a local signal with a lower frequency than the RF signal as a cutoff region is short-circuited, and a microstrip line is placed on the outer wall of the waveguide. A metal rod is inserted from one end of the center conductor of the microstrip line near the short-circuited surface of the waveguide, and the diameter of the insertion hole of the metal rod provided in the ground conductor of the microstrip line is adjusted. is smaller than the diameter of the insertion hole of the metal rod in the circular waveguide, the microstrip line and the waveguide are coupled, and the RF signal from the waveguide is transferred to the microstrip line. A microwave frequency conversion device characterized in that frequency conversion is performed using a local oscillation circuit and a mixer circuit of a lower frequency than this RF signal configured in a loop line. 2. The microwave frequency conversion device according to claim 1, characterized in that the input side of the circular waveguide is equipped with a circular-rectangular waveguide device including an elongated waveguide and a square waveguide. .
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59026302A JPS60171811A (en) | 1984-02-15 | 1984-02-15 | Microwave frequency converter |
| US06/701,912 US4679249A (en) | 1984-02-15 | 1985-02-14 | Waveguide-to-microstrip line coupling arrangement and a frequency converter having the coupling arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59026302A JPS60171811A (en) | 1984-02-15 | 1984-02-15 | Microwave frequency converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60171811A JPS60171811A (en) | 1985-09-05 |
| JPH0215127B2 true JPH0215127B2 (en) | 1990-04-11 |
Family
ID=12189551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59026302A Granted JPS60171811A (en) | 1984-02-15 | 1984-02-15 | Microwave frequency converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171811A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0440628U (en) * | 1990-08-06 | 1992-04-07 |
-
1984
- 1984-02-15 JP JP59026302A patent/JPS60171811A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0440628U (en) * | 1990-08-06 | 1992-04-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60171811A (en) | 1985-09-05 |
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