JPH0217001B2 - - Google Patents
Info
- Publication number
- JPH0217001B2 JPH0217001B2 JP14256783A JP14256783A JPH0217001B2 JP H0217001 B2 JPH0217001 B2 JP H0217001B2 JP 14256783 A JP14256783 A JP 14256783A JP 14256783 A JP14256783 A JP 14256783A JP H0217001 B2 JPH0217001 B2 JP H0217001B2
- Authority
- JP
- Japan
- Prior art keywords
- organic polymer
- polymer film
- photoresist
- ion
- grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920000620 organic polymer Polymers 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000000992 sputter etching Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002120 nanofilm Substances 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
【発明の詳細な説明】
この発明は、分光器の波長分散素子やホログラ
ム素子として使われるブレーズド格子の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a blazed grating used as a wavelength dispersion element or hologram element in a spectrometer.
回折格子は、分光器の波長分散素子やホログラ
ム素子として種々の応用、例えばホログラフイツ
クスキヤナや、ホログラフイツクレンズ等がある
が、一般に回折効率が低く実用上問題である。ブ
レーズド格子は特定の回折次数へ理論上100％の
光を回折できる特徴があるが、格子溝の形状を制
御して製作しなければならないため製作が困難で
ある。現在最も現実的と思われるのは、あらかじ
め作つたレリーフ格子をシヤドウマスクとして基
板を斜め方向からイオンビームでイオンエツチン
グする方法である。この手法で現在知られている
のは、基板をガリウム砒素、又はガラス板上に塗
布したポリメチルメタクリレート（PMMA）と
したものであるが、前者は結晶であるため高価
で、又不透明のため透過型格子にはできない欠点
がある。一方、後者はガラス板上に塗布した
PMMAを十分に乾燥しても、塗膜上にホトレジ
ストでレリーフ格子を形成する際にホトレジスト
の溶剤でPMMA膜が溶解し、相溶しやすいため、
レリーフ格子自体が良質なものができず、したが
つて良質なブレーズ格子が製作できない欠点があ
つた。 Diffraction gratings have various applications as wavelength dispersion elements in spectrometers and hologram elements, such as holographic scanners and holographic lenses, but they generally have low diffraction efficiency and are a practical problem. Blazed gratings have the characteristic of theoretically being able to diffract 100% of light into a specific diffraction order, but are difficult to manufacture because the shape of the grating grooves must be controlled. Currently, the most practical method is to ion-etch the substrate with an ion beam from an oblique direction using a relief grating prepared in advance as a shadow mask. The currently known method for this method is to use gallium arsenide as the substrate or polymethyl methacrylate (PMMA) coated on a glass plate, but the former is expensive because it is a crystal, and it is opaque and therefore transparent. There is a drawback that a molded grid cannot. On the other hand, the latter was applied on a glass plate.
Even if the PMMA is sufficiently dried, when forming a relief grid with photoresist on the coating film, the PMMA film is easily dissolved by the photoresist solvent and becomes compatible.
The problem was that the relief grating itself could not be made of high quality, and therefore a high quality blazed grating could not be manufactured.
この発明の目的は、上述の欠点を除去した、透
過型の高品質のブレーズド格子の製造方法を提供
することにある。 The object of the invention is to provide a method for producing a high-quality blazed grating of the transmission type, which eliminates the above-mentioned drawbacks.
この発明のブレーズド格子の製造方法は基板に
有機高分子膜を塗布する工程と、塗布された前記
有機高分子膜にイオンビームを照射して前記有機
高分子膜上に積層するホトレジストの溶媒に対し
て不溶な層を前記有機高分子膜の表面に形成する
工程と、イオンビームを照射した前記有機高分子
膜に前記有機高分子膜よりもイオンエツチング速
度の遅いホトレジストを塗布する工程と、塗布さ
れたホトレジスト膜をレリーフ型の回折格子に形
成する工程と、前記回折格子をシヤドウマスクと
して、基板に対して斜め方向からイオンビームに
よつてイオンエツチングする工程とを含むことを
特徴とするブレーズド格子の製造方法である。 The method for manufacturing a blazed grating of the present invention includes the steps of coating an organic polymer film on a substrate, irradiating the applied organic polymer film with an ion beam, and removing the solvent for the photoresist laminated on the organic polymer film. forming an insoluble layer on the surface of the organic polymer film; applying a photoresist whose ion etching rate is slower than that of the organic polymer film to the organic polymer film irradiated with the ion beam; manufacturing a blazed grating, comprising the steps of: forming a relief-type photoresist film into a relief-type diffraction grating; and using the diffraction grating as a shadow mask, ion-etching the substrate with an ion beam from an oblique direction. It's a method.
次に図面を参照して、この発明を詳細に説明す
る。 Next, the present invention will be described in detail with reference to the drawings.
第１図から第６図までは、この発明の一実施例
を、工程の順に説明するための断面図である。第
１図は、基板１に有機高分子膜２を塗布した状態
を示す断面図である。基板としてはガラス板及び
アクリル板を用いた。有機高分子膜としては、
種々実験した結果、イオンエツチング速度の早い
ソマール工業製の電子線レジストSEL−Ｎタイプ
Ａを用いた。SEL−ＮタイプＡはメタクリル酸グ
リシジルとアクリル酸エチルの共重合体である。
イオンエツチング速度は1mA／cm2のアルゴンイ
オンビームに対し660オングストローム／分であ
つた。基板にはスピナーで回転塗布した。塗布厚
は約1μmである。その後、ガラス基板の時は80℃
で30分間焼きしめを行なつた。アクリル板の時は
50℃で60分間焼きしめを行なつた。次に、この有
機高分子膜を加速電圧50V、イオン電流密度
0.5mA／cm2のアルゴンイオンビームで約１分間イ
オンエツチングした。この結果、第２図に示すよ
うに有機高分子膜の表面にホトレジストAZ−
1350Jの溶媒に対して不溶な層３ができた。 FIG. 1 to FIG. 6 are cross-sectional views for explaining one embodiment of the present invention in the order of steps. FIG. 1 is a cross-sectional view showing a state in which an organic polymer film 2 is coated on a substrate 1. As shown in FIG. A glass plate and an acrylic plate were used as the substrate. As an organic polymer film,
As a result of various experiments, we used an electron beam resist SEL-N type A manufactured by Somer Industries, which has a fast ion etching speed. SEL-N Type A is a copolymer of glycidyl methacrylate and ethyl acrylate.
The ion etching rate was 660 Å/min for a 1 mA/cm 2 argon ion beam. The coating was applied to the substrate using a spinner. The coating thickness is approximately 1 μm. After that, 80℃ for glass substrate.
I baked it for 30 minutes. When using acrylic board
Baking was performed at 50°C for 60 minutes. Next, this organic polymer film was applied at an acceleration voltage of 50V and an ion current density of
Ion etching was performed for about 1 minute using an argon ion beam of 0.5 mA/cm 2 . As a result, as shown in Figure 2, photoresist AZ-
A layer 3 was formed which was insoluble in the 1350J solvent.
第３図は、不溶層３の上にホトレジスト４を塗
布した状態を示す断面図である。ホトレジストと
してはシプレー社製AZ−1350Jを使用した。イオ
ンエツチング速度は1mA／cm2のアルゴンイオン
に対し300Å／分であつた。電子線レジスト膜上
にはスピナーで回転塗布した。焼きしめは電子線
レジストと同り条件で行なつた。塗布厚は、次に
形成する格子のピツチにより異なり0.3μm〜1μm
とした。 FIG. 3 is a sectional view showing a state in which a photoresist 4 is applied on the insoluble layer 3. As the photoresist, AZ-1350J manufactured by Shipley was used. The ion etching rate was 300 Å/min for argon ions at 1 mA/cm 2 . The coating was applied onto the electron beam resist film using a spinner. Baking was performed under the same conditions as for electron beam resist. The coating thickness varies from 0.3μm to 1μm depending on the pitch of the grid to be formed next.
And so.
次に、ホトレジスト膜にレリーフ格子を形成す
るために、He−Cdレーザを光源とする干渉計で
干渉縞をホトレジスト膜に露光し、現像液で現像
した。第４図は、現像後の状態を示す断面図であ
る。レーザ干渉計を用いるかわりに乳剤マスクを
用いて密着焼付によつても第４図に示すようなレ
リーフ格子を形成できる。次に、第４図に示すよ
うな試料をイオンエツチング装置を用いて、斜め
入射のアルゴンイオンビームでイオンエツチング
した。第５図は、イオンエツチングを途中で中断
した状態を示す。さらにイオンエツチングを進め
ると、第６図に示すようなブレーズド格子が得ら
れる。アルゴンイオンビームとしては、加速電圧
300〜700V、イオン電流密度0.3〜0.7mA／cm2で
行なつた。 Next, in order to form a relief grating on the photoresist film, interference fringes were exposed on the photoresist film using an interferometer using a He-Cd laser as a light source, and the film was developed with a developer. FIG. 4 is a sectional view showing the state after development. Instead of using a laser interferometer, a relief grating as shown in FIG. 4 can also be formed by contact printing using an emulsion mask. Next, the sample shown in FIG. 4 was ion-etched using an ion etching apparatus with an obliquely incident argon ion beam. FIG. 5 shows a state in which ion etching is interrupted midway. When ion etching is further carried out, a blazed grating as shown in FIG. 6 is obtained. For the argon ion beam, the accelerating voltage
It was carried out at 300-700V and an ion current density of 0.3-0.7mA/ cm2 .
本実施例では、有機高分子膜としてSEL−Ｎタ
イプＡを用いた場合を説明したが、本方法に適す
る他の有機高分子膜材料としては、SEL−Ｎタイ
プＡと同じ様な電子線レジストEBR−９、又は
メタクリの２つのメチル基をClおよびCH2CF3で
置換した重合体（電子線レジストCOP）、又はポ
リメチルメタアクリレート（PMMA）、又はポリ
ビニルアルコール（PVA）、又はポリビニルホル
マール（PVF）、又はポリアセタール（POM）
がある。これらは、いずれもホトレジストAZ−
1350Jよりもイオンエツチング速度が早いので、
本方法でブレーズド格子を製造できる。 In this example, the case where SEL-N type A was used as the organic polymer film was explained, but other organic polymer film materials suitable for this method include electron beam resist similar to SEL-N type A. EBR-9, or a polymer in which the two methyl groups of methacrylic acid are replaced with Cl and CH 2 CF 3 (electron beam resist COP), or polymethyl methacrylate (PMMA), or polyvinyl alcohol (PVA), or polyvinyl formal ( PVF) or polyacetal (POM)
There is. All of these are photoresist AZ-
The ion etching speed is faster than 1350J, so
Blazed gratings can be manufactured using this method.
以上述べた様に本発明により、透過型の高品質
のブレーズド格子が得られる。 As described above, according to the present invention, a transmission type blazed grating of high quality can be obtained.
図は、この発明の工程を第１図から第６図の順
に示す断面図である。
図において、１は基板、２は有機高分子膜、３
は不溶層、４はホトレジストを各々表わす。
The figures are sectional views showing the steps of the present invention in the order of FIGS. 1 to 6. In the figure, 1 is a substrate, 2 is an organic polymer film, and 3 is a substrate.
4 represents an insoluble layer, and 4 represents a photoresist.
Claims (1)
された前記有機高分子膜にイオンビームを照射し
て前記有機高分子膜上に積層するホトレジストの
溶媒に対して不溶な層を前記有機高分子膜の表面
に形成する工程と、イオンビームを照射した前記
有機高分子膜に前記有機高分子膜よりもイオンエ
ツチング速度の遅いホトレジストを塗布する工程
と、塗布されたとホトレジスト膜をレリーフ型の
回折格子に形成する工程と、前記回折格子をシヤ
ドウマスクとして、基板に対して斜め方向からイ
オンビームによつてイオンエツチングする工程と
を含むことを特徴とするブレーズド格子の製造方
法。1. A step of applying an organic polymer film to a substrate, and irradiating the applied organic polymer film with an ion beam to form a layer insoluble in the solvent of the photoresist to be laminated on the organic polymer film. A step of forming a photoresist on the surface of a molecular film, a step of applying a photoresist whose ion etching rate is slower than that of the organic polymer film to the organic polymer film irradiated with an ion beam, and a relief type diffraction process of the applied photoresist film. A method for manufacturing a blazed grating, comprising the steps of: forming a grating; and using the diffraction grating as a shadow mask, ion-etching the substrate with an ion beam from an oblique direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14256783A JPS6033503A (en) | 1983-08-05 | 1983-08-05 | Production of blazed grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14256783A JPS6033503A (en) | 1983-08-05 | 1983-08-05 | Production of blazed grating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6033503A JPS6033503A (en) | 1985-02-20 |
| JPH0217001B2 true JPH0217001B2 (en) | 1990-04-19 |
Family
ID=15318324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14256783A Granted JPS6033503A (en) | 1983-08-05 | 1983-08-05 | Production of blazed grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033503A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6490402A (en) * | 1987-09-30 | 1989-04-06 | Kuraray Co | Transmission type diffraction grating |
| CN110632689B (en) * | 2019-08-16 | 2021-11-16 | 诚瑞光学(常州)股份有限公司 | Method for manufacturing surface relief grating structure |
-
1983
- 1983-08-05 JP JP14256783A patent/JPS6033503A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6033503A (en) | 1985-02-20 |
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