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JPH0220583B2 - - Google Patents
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JPH0220583B2 - - Google Patents

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Publication number
JPH0220583B2
JPH0220583B2 JP59166271A JP16627184A JPH0220583B2 JP H0220583 B2 JPH0220583 B2 JP H0220583B2 JP 59166271 A JP59166271 A JP 59166271A JP 16627184 A JP16627184 A JP 16627184A JP H0220583 B2 JPH0220583 B2 JP H0220583B2
Authority
JP
Japan
Prior art keywords
sample
samples
content
porcelain
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59166271A
Other languages
Japanese (ja)
Other versions
JPS6144758A (en
Inventor
Kenichi Hoshi
Takashi Yoshimi
Shoichi Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP59166271A priority Critical patent/JPS6144758A/en
Publication of JPS6144758A publication Critical patent/JPS6144758A/en
Publication of JPH0220583B2 publication Critical patent/JPH0220583B2/ja
Granted legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は、回路基板の材料となる磁器組成物、
特に多層回路基板用の材料として最適な磁器組成
物に関する。 〔従来の技術〕 電気回路装置の小型化が要求される今日、回路
基板は、益々多層化、小型化、薄型化されて集積
密度を高くする傾向にある。こうした中で高い信
頼性を得るため、多層回路基板用の材料には、高
い絶縁性と高い抗折強度等の諸特性を具備した磁
器が使用されている。また、これまでは、多層回
路基板の製造コストを下げる目的で、配線用に比
較的安価な導電材料(例えばニツケル等の卑金
属)の使用が可能なよう、焼成温度を低く、かつ
非酸化雰囲気で焼成する方法が試みられていた。 さらに、基板が薄型化されると、内部回路の配
線パターンが外部から透けて見えやすくなるた
め、機密保持の観点から、遮光性の高い磁器材料
が要求される。 〔発明が解決しようとする問題点〕 しかし非酸化雰囲気中で焼成される磁器の多く
は、焼成した後の遮光性が低いという特質があ
る。遮光性を高める方法には、磁器基板材料に
CuO,Pb2O3,V2O5等の酸化物を加える方法が
ある。しかし、これらを加えた磁器を非酸化雰囲
気で焼成すると、磁器の絶縁抵抗値が低くなつて
しまうという欠点がある。 本発明は、従来の磁器材料における上記の問題
を解決すべくなされたものであつて、遮光性が高
く、かつ絶縁性の高い磁器組成物を提供すること
を目的とするものである。 〔問題を解決するための手段〕 本発明の磁器組成物は、Al2O3を20〜70%(重
量比、以下同じ)と、SiO2を10〜55%と、CaO,
SrO,BaO,ZnOの一種以上からなる成分を1〜
40%と、B2O2を3〜30%と、Li2Oを0.1〜3%
と、Cr2O3を0.5〜10%とからなるものである。 〔実施例〕 以下に本発明の実施例として各成分の含有量の
異なる磁器組成物から試料を作製し、それぞれに
ついて実施した試験結果等について説明する。 まず試料1を例にとつて、別表に掲げる各試料
の作製方法と条件について説明すると、最初に
Al2O3粉末40.0g、SiO2粉末を10.0g、CaCO3
末を17.8g、BaCO3粉末を6.32g、Li2CO3粉末を
0.25g、B2O3を30g、Cr2O3粉末を5.0g宛秤量す
る。なお、上記Ca,Ba,Liの炭酸塩粉末は、何
れも空気中で安定なものを用いた。 この秤量した各粉末をボールミルに入れ、約15
時間ボールミリングすることにより湿式混合し
た。 次ぎに同材料に対して、アクリル樹脂を12重量
%、アリルスルホン酸を0.5重量%、水を30重量
%加えて撹拌し、スラリーを作製した。次いでこ
のスラリーからドクターブレード法によつて長尺
な未焼結磁器シートを作り、これを10cm角に切断
した。 そしてこの切断された未焼結磁器シートから試
験の目的に従い、3種類の試料を作製した。即
ち、上記シートを6枚重ね、200Kg/cm2の圧力を
加えてラミネートした厚さ0.1cmの板から、直径
1.6cmで打ち抜いた円板形の試料と、上記シート
を12枚重ねて同様にラミネートした厚さ0.2cmの
板を長さ3.6cm、幅0.4cmの寸法に切断した角柱形
の試料と、上記シートを長さ5cm、幅3cmに切断
し、Niペーストでその片面のほゞ中央に長さ3
cm、幅0.03cmの直線を0.05cm間隔で平行に5本ス
クリーン印刷した角板形の試料をそれぞれ複数個
作製した。 ついでこれら試料を空気中において600℃まで
毎時100℃の割合で昇温し、アクリル樹脂等のバ
インダ成分を燃焼させた。しかる後、炉の中を
N2が97.0容積%、H20が3.0容積%の還元雰囲気
に変えて、1150℃の温度を3時間維持して焼成
し、試料1を得た。このときの上記焼成温度FT
を別表に示した。 そしてこの試料について、次の方法により試験
をおこなつた。先ず、電均的特性については、上
記円板形の試料を用い、この両面にインジウム−
ガリウム合金を塗布して、直径1.4cmの電極を設
け、比誘電率ε、クオリテイフアクターQ及び抵
抗率ρ(Ωcm)を測定した。比誘電率εは、25℃
の温度下で1MHzの周波数で測定した静電容量に
より算出し、Qは、上記静電容量と同様の条件で
測定した。また抵抗率ρは、500Vの直流電圧を
印加し、印加開始から60秒後の絶縁抵抗値から算
出した。 物理的、機械的特性については、厚さ0.2cmの
角柱形の試料を用い、熱膨張係数及び抗折強度τ
を測定し、これを別表に示した。熱膨張係数は、
20〜500℃の温度間における線膨張係数α(/℃)
を測定し、抗折強度τは、JIS−R1601の3点曲
げ強さに準じて測定した。 さらに遮光性については、Niで片面に5本の
直線を引いた角板形の試料を用い、これらの線が
裏面から肉眼で透けて見えないものを遮光性良好
とし、透けて見えるものを遮光性不良とした。 以下、試料2〜53についても、磁器の組成が別
表の各欄に示すような含有比率となるよう各磁器
材料粉末を調合し、これから上記試料1と同様の
方法及び条件で作製した。但し、焼成温度FTは、
各々異なり、別表各欄に示す温度で実施した。ま
た、こうして作られた各試料について、試料1と
同じ方法、条件で上記の諸特性を測定し、この
内、各試料の抗折強度τと、線膨張係数αと、遮
光性を別表の各欄に示した。なお、数値は何れも
複数個の試料について得られた測定値の平均値を
示した。 同表から明らかな通り、これら1〜53までの試
料は、何れも焼成温度FTが1250℃以下、抗折強
度τが1500Kg/cm2以上、線膨張係数αが6.0×
10-6/℃以下であり、また遮光性は何れも良好で
あつた。なお、これらの試料は、何れも比誘電率
εが9以下、Qが500〜2000、抵抗率ρが1×
1013Ωcm以上であり、回路基板材料として実用的
な数値を得ることができた。なお、これらの具体
的な数値の別表への掲載は省略した。 〔比較例〕 これに対し、上記の含有比率の要件を満たさな
い磁器材料を使用し、上記試料と同じ方法及び条
件で54〜63番まで10の試料を作製した。但し、焼
成温度FTは、各々異なり、それぞれ別表各欄に
示した温度で実施した。なお、一部に焼結できる
温度幅が狭いために、一般の工業用の焼成炉で
は、焼結ができないものがあり、これについては
その旨を別表に示した。 また、こうして作られた各試料について、上記
と同じ方法、条件で試験を行い、この内、線膨張
係数αと、遮光性を別表に示した。また、抵抗率
ρは、試料59,63を除いて何れも1013Ωcm以上あ
つたが、試料59,63は、1012Ωcmであつた。 〔作用〕 本発明による磁器組成物の成分を前述のように
限定した理由を、説明すると、概ね次の通りであ
る。 (1) SiO2の含有率が10%より少ないと焼成温度
FTが高くなり、また55%より多くなると同温
度FTが高くなる。 例えば、試料1〜53の中でSiO2の含有量が
10.0%と最も少ないのは、試料1〜6である
が、これらの試料が何れも1150〜1250℃で焼結
できたのに対し、これより少ない5.0%の含有
率の試料54では、焼結に1350℃の温度を要し
た。一方、試料1〜53の中でSiO2の含有量が
55%と最も多いのは、10〜15の試料であるが、
これらが何れも1150℃以下の温度で焼結できた
のに対し、これより多い65%のSiO2を含有す
る試料55では、焼結に1300℃の温度を要した。 (2) CaO,SrO,BaO,ZnOの一種以上からなる
成分の含有量が40%より多いと焼成温度FTが
高くなる。 例えば、試料1〜53の中でこれら酸化物の含
有量が比較的多い試料16(40%)と同29(36.9
%)では、それぞれ1100℃と1200℃で焼結でき
たが、試料56のように、この含有量が50%とさ
らに多くなると、焼成温度FTが1300℃と高く
なつた。 (3) Al2O3の含有量が20%より少ないと焼結でき
る温度の幅が狭くなり、70%より多いと焼成温
度FTが高くなる。 例えば、試料13〜18のように、Al2O3の含有
量が20%の試料では、一般の工業用の焼成炉で
磁器として使用可能な焼結体が得られたが、こ
れが10%の試料57では、焼結できる温度の幅が
狭く、一般の工業用の焼成炉では、焼結させる
ことができなかつた。他方、試料4〜9のよう
にAl2O3の含有量が70%の試料では、何れも
1150〜1250℃で焼結できたのに対し、これが80
%の試料58では、焼成温度FTが1400℃という
高温を要した。 (4) B2O3の含有量が3%より少ないと焼成温度
FTを高くしなければならず、30%より多いと
焼結できる温度の幅が狭くなる。 例えば、B2O3の含有量が3%である試料8,
27,38の場合、1150〜1250℃の焼成温度FTで
焼結させることができたが、これが1%の試料
60では、焼結に1350℃の温度を要した。また、
試料1〜53の中でB2O3の含有量が比較的多い
試料1(30%)と20(26.5%)が一般の工業用焼
成炉で磁器として使用可能な焼結体が得られた
のに対し、試料61のように同含有量が40%の試
料では、焼結できる温度の幅が狭いため、一般
の工業用焼成炉では、焼結させることができな
かつた。 (5) LiO2の含有量が3%より多いと、充分な絶
縁抵抗を得ることができない。 例えば、既に述べたように、LiO2が5%含
まれている試料59以外の試料では、何れも抵抗
率ρが1013Ωcm以上であつたが、試料59では、
抵抗率ρが1012Ωcmと低かつた。 (6) Cr2O3の含有量が0.5%より少ないと良好な遮
光性が得られず、また10%より多いと抵抗率ρ
が低下し、抗折強度も低下する。 例えば、Cr2O3の含有量が0.5%の試料4,
8,9,16,31,36では、遮光性が良好であつ
たが、これが0.2%と少ない試料62では、遮光
性が不良となつた。また、Cr2O3の含有量が10
以下の試料1〜53は、何れも抵抗率ρが1013Ω
cm以上であつたが、これが15%の試料63では、
抵抗率ρが1012Ωcmと低く、かつ抗折強度も
1300Kg/cm2と低かつた。 〔発明の効果〕 以上説明した通り、本発明による磁器組成物
は、非酸化雰囲気中において1250℃以下という低
い温度で焼結させることができると同時に、高い
遮光性が得られ、しかも実用上充分な絶縁抵抗が
得られる。従つて、比較的低いコストで磁器基板
が製造できるようになると共に、基板の薄型化に
対応でき、かつ配線パターンの機密性を保持する
ことができる。
[Industrial Application Field] The present invention relates to a ceramic composition that is a material for a circuit board,
In particular, the present invention relates to a ceramic composition suitable as a material for multilayer circuit boards. [Prior Art] Today, there is a demand for miniaturization of electric circuit devices, and there is a tendency for circuit boards to become increasingly multi-layered, smaller, thinner, and have higher integration density. In order to obtain high reliability under these circumstances, porcelain, which has various properties such as high insulation and high bending strength, is used as a material for multilayer circuit boards. In addition, in order to reduce the manufacturing cost of multilayer circuit boards, it has been necessary to use a low firing temperature and a non-oxidizing atmosphere so that relatively inexpensive conductive materials (such as base metals such as nickel) can be used for wiring. A firing method was tried. Furthermore, as the substrate becomes thinner, the wiring pattern of the internal circuit becomes easier to see through from the outside, so a porcelain material with high light-shielding properties is required from the viewpoint of security. [Problems to be Solved by the Invention] However, many of the porcelains fired in a non-oxidizing atmosphere have a characteristic of having low light-shielding properties after firing. One way to improve light-shielding properties is to use ceramic substrate materials.
There is a method of adding oxides such as CuO, Pb 2 O 3 and V 2 O 5 . However, if porcelain to which these are added is fired in a non-oxidizing atmosphere, there is a drawback that the insulation resistance value of the porcelain becomes low. The present invention was made to solve the above-mentioned problems with conventional porcelain materials, and an object of the present invention is to provide a porcelain composition that has high light-shielding properties and high insulation properties. [Means for solving the problem] The ceramic composition of the present invention contains 20 to 70% Al 2 O 3 (weight ratio, same hereinafter), 10 to 55% SiO 2 , CaO,
1 to 1 component consisting of one or more of SrO, BaO, ZnO
40%, B 2 O 2 3-30%, Li 2 O 0.1-3%
and 0.5 to 10% Cr 2 O 3 . [Example] Below, as an example of the present invention, samples were prepared from porcelain compositions having different contents of each component, and test results and the like conducted for each sample will be described. First, using sample 1 as an example, we will explain the preparation method and conditions for each sample listed in the attached table.
40.0g Al 2 O 3 powder, 10.0g SiO 2 powder, 17.8g CaCO 3 powder, 6.32g BaCO 3 powder, Li 2 CO 3 powder
Weigh out 0.25 g, 30 g of B 2 O 3 , and 5.0 g of Cr 2 O 3 powder. The Ca, Ba, and Li carbonate powders used were all stable in the air. Place each weighed powder in a ball mill, approximately 15
Wet mixed by ball milling for an hour. Next, 12% by weight of acrylic resin, 0.5% by weight of allylsulfonic acid, and 30% by weight of water were added to the same material and stirred to prepare a slurry. Next, a long unsintered porcelain sheet was made from this slurry by a doctor blade method, and this was cut into 10 cm square pieces. Three types of samples were prepared from the cut unsintered porcelain sheets according to the purpose of the test. In other words, a diameter
A disk-shaped sample punched out with a 1.6 cm piece, a prismatic sample made by cutting a 0.2 cm thick plate made by laminating 12 of the above sheets into 3.6 cm length and 0.4 cm width, and the above. Cut the sheet into 5cm long and 3cm wide pieces, and apply Ni paste to the center of one side to a length of 3cm.
A plurality of rectangular plate-shaped samples were prepared by screen-printing five straight lines with a width of 0.03 cm and a width of 0.03 cm in parallel at intervals of 0.05 cm. These samples were then heated in air to 600°C at a rate of 100°C per hour to burn off binder components such as acrylic resin. After that, inside the furnace
The atmosphere was changed to a reducing atmosphere containing 97.0% by volume of N 2 and 3.0% by volume of H 2 0, and the temperature was maintained at 1150° C. for 3 hours to obtain Sample 1. The above firing temperature FT at this time
are shown in the attached table. This sample was then tested in the following manner. First, regarding the electrical characteristics, we used the disk-shaped sample mentioned above, and indium was applied to both sides of the sample.
A gallium alloy was applied, an electrode with a diameter of 1.4 cm was provided, and the dielectric constant ε, quality factor Q, and resistivity ρ (Ωcm) were measured. The relative permittivity ε is 25℃
Q was calculated from the capacitance measured at a frequency of 1 MHz at a temperature of Further, the resistivity ρ was calculated from the insulation resistance value 60 seconds after applying a DC voltage of 500V. Regarding the physical and mechanical properties, a prismatic sample with a thickness of 0.2 cm was used, and the coefficient of thermal expansion and bending strength τ
was measured and shown in the attached table. The coefficient of thermal expansion is
Linear expansion coefficient α (/℃) between 20 and 500℃
The bending strength τ was measured according to the three-point bending strength of JIS-R1601. Furthermore, regarding light-shielding properties, we used a rectangular plate-shaped sample with five straight lines drawn on one side of Ni.If these lines cannot be seen through to the naked eye from the back side, the light-shielding properties are considered to be good, and if these lines are visible from the back side, light-shielding properties are considered good. It was considered a sexual defect. Hereinafter, for Samples 2 to 53, each porcelain material powder was prepared so that the composition of the porcelain had a content ratio as shown in each column of the attached table, and was produced from this powder in the same manner and under the same conditions as Sample 1 above. However, the firing temperature FT is
Each test was conducted at a different temperature as shown in each column of the attached table. In addition, for each sample made in this way, the above-mentioned properties were measured using the same method and conditions as Sample 1, and among these, the bending strength τ, linear expansion coefficient α, and light shielding property of each sample were measured as shown in the attached table. Shown in the column. In addition, all the numerical values showed the average value of the measured value obtained about several samples. As is clear from the same table, all of these samples 1 to 53 have a firing temperature FT of 1250°C or lower, a bending strength τ of 1500 Kg/cm 2 or higher, and a linear expansion coefficient α of 6.0×
10 -6 /°C or less, and the light shielding properties were all good. These samples all have a relative dielectric constant ε of 9 or less, a Q of 500 to 2000, and a resistivity ρ of 1×
It was 10 13 Ωcm or more, which is a value that is practical for use as a circuit board material. Please note that these specific figures have been omitted from being listed in the attached table. [Comparative Example] On the other hand, 10 samples Nos. 54 to 63 were prepared using a porcelain material that did not meet the requirements for the content ratio described above and using the same method and conditions as the above sample. However, the firing temperature FT was different for each, and the firing was performed at the temperatures shown in each column of the separate table. Note that there are some products that cannot be sintered in a general industrial kiln because the temperature range for sintering is narrow, and these are shown in the attached table. In addition, each sample made in this way was tested in the same manner and under the same conditions as above, and the linear expansion coefficient α and light shielding properties are shown in the attached table. Further, the resistivity ρ was 10 13 Ωcm or more in all samples except Samples 59 and 63, which were 10 12 Ωcm. [Function] The reason why the components of the porcelain composition according to the present invention are limited as described above is generally as follows. (1) If the content of SiO 2 is less than 10%, the firing temperature
When FT becomes high and exceeds 55%, FT at the same temperature becomes high. For example, the content of SiO 2 in samples 1 to 53 is
Samples 1 to 6 have the lowest content of 10.0%, but while all of these samples were able to sinter at 1150 to 1250°C, sample 54, which had a lower content of 5.0%, could not be sintered. It required a temperature of 1350℃. On the other hand, the content of SiO 2 in samples 1 to 53 is
The most common sample, 55%, is 10 to 15 samples.
All of these could be sintered at temperatures below 1150°C, whereas sample 55, which contained a higher content of 65% SiO 2 , required a temperature of 1300°C for sintering. (2) If the content of one or more of CaO, SrO, BaO, and ZnO is more than 40%, the firing temperature FT increases. For example, among samples 1 to 53, samples 16 (40%) and 29 (36.9%) have a relatively high content of these oxides.
%), it was possible to sinter at 1100°C and 1200°C, respectively, but when the content was even higher to 50%, as in sample 56, the firing temperature FT became as high as 1300°C. (3) If the content of Al 2 O 3 is less than 20%, the range of temperatures that can be sintered will be narrowed, and if it is more than 70%, the firing temperature FT will be high. For example, samples with an Al 2 O 3 content of 20%, such as Samples 13 to 18, yielded sintered bodies that could be used as porcelain in a general industrial firing furnace; Sample 57 had a narrow range of temperatures that could be sintered, and could not be sintered in a general industrial kiln. On the other hand, in samples with Al 2 O 3 content of 70% like Samples 4 to 9, all
Whereas sintering was possible at 1150-1250℃, this
Sample 58 of % required a high firing temperature FT of 1400°C. (4) If the content of B 2 O 3 is less than 3%, the firing temperature
It is necessary to increase FT, and if it is more than 30%, the range of temperatures that can be sintered becomes narrower. For example, sample 8 with a B 2 O 3 content of 3%,
In the case of 27 and 38, it was possible to sinter at a firing temperature of 1150 to 1250°C, but this was the case for the 1% sample.
60 required a temperature of 1350°C for sintering. Also,
Among samples 1 to 53, samples 1 (30%) and 20 (26.5%), which have a relatively high B 2 O 3 content, were able to produce sintered bodies that could be used as porcelain in a general industrial firing furnace. On the other hand, a sample with a content of 40%, such as Sample 61, could not be sintered in a general industrial kiln because the temperature range at which it could be sintered was narrow. (5) If the LiO 2 content is more than 3%, sufficient insulation resistance cannot be obtained. For example, as mentioned above, all of the samples other than sample 59, which contains 5% LiO 2 , had a resistivity ρ of 10 13 Ωcm or more, but in sample 59,
The resistivity ρ was as low as 10 12 Ωcm. (6) If the Cr 2 O 3 content is less than 0.5%, good light shielding properties cannot be obtained, and if it is more than 10%, the resistivity ρ
decreases, and the bending strength also decreases. For example, sample 4 with a Cr 2 O 3 content of 0.5%,
Samples No. 8, 9, 16, 31, and 36 had good light-shielding properties, but Sample 62, which had a small amount of 0.2%, had poor light-shielding properties. In addition, the content of Cr 2 O 3 is 10
The following samples 1 to 53 all have a resistivity ρ of 10 13 Ω.
cm or more, but in sample 63 where this was 15%,
Low resistivity ρ of 10 12 Ωcm and bending strength
It was as low as 1300Kg/ cm2 . [Effects of the Invention] As explained above, the porcelain composition according to the present invention can be sintered at a low temperature of 1250°C or less in a non-oxidizing atmosphere, and at the same time has a high light-shielding property, which is sufficient for practical use. A high insulation resistance can be obtained. Therefore, the ceramic substrate can be manufactured at a relatively low cost, the substrate can be made thinner, and the confidentiality of the wiring pattern can be maintained.

【表】【table】

【表】【table】

【表】【table】

Claims (1)

【特許請求の範囲】[Claims] 1 Al2O3を20〜70重量%と、SiO2を10〜55重量
%と、CaO,SrO,BaO,ZnOの一種以上からな
る成分を1〜40重量%と、B2O2を3〜30重量%
と、Li2Oを0.1〜3重量%と、Cr2O3を0.5〜10重
量%とからなることを特徴とする磁器組成物。
1 20 to 70% by weight of Al 2 O 3 , 10 to 55% by weight of SiO 2 , 1 to 40% by weight of a component consisting of one or more of CaO, SrO, BaO, and ZnO, and 3% by weight of B 2 O 2 ~30% by weight
, 0.1 to 3% by weight of Li 2 O, and 0.5 to 10% by weight of Cr 2 O 3 .
JP59166271A 1984-08-08 1984-08-08 Insulative ceramic composition Granted JPS6144758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59166271A JPS6144758A (en) 1984-08-08 1984-08-08 Insulative ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59166271A JPS6144758A (en) 1984-08-08 1984-08-08 Insulative ceramic composition

Publications (2)

Publication Number Publication Date
JPS6144758A JPS6144758A (en) 1986-03-04
JPH0220583B2 true JPH0220583B2 (en) 1990-05-09

Family

ID=15828285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59166271A Granted JPS6144758A (en) 1984-08-08 1984-08-08 Insulative ceramic composition

Country Status (1)

Country Link
JP (1) JPS6144758A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608229B2 (en) * 1980-06-30 1985-03-01 日本電気株式会社 multilayer ceramic substrate
JPS5945967A (en) * 1982-09-03 1984-03-15 日立化成工業株式会社 Color ceramics for electronic parts

Also Published As

Publication number Publication date
JPS6144758A (en) 1986-03-04

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