JPH0224347B2 - - Google Patents
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- Publication number
- JPH0224347B2 JPH0224347B2 JP56131128A JP13112881A JPH0224347B2 JP H0224347 B2 JPH0224347 B2 JP H0224347B2 JP 56131128 A JP56131128 A JP 56131128A JP 13112881 A JP13112881 A JP 13112881A JP H0224347 B2 JPH0224347 B2 JP H0224347B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- film
- coercive force
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Description
【発明の詳細な説明】
本発明は、薄膜磁気センサの製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a thin film magnetic sensor.
従来、外部磁場の変化量、あるいは変化の検出
をする磁気センサには、半導体材料、磁性材料な
どを用いた多くのセンサが開発され、実用化され
ている。たとえば、半導体材料を用いたもので
は、オール素子、電界効果トランジスタ素子があ
る。これらはInSb，GaAs等の−化合物、
Si、あるいはGeなどが主に使用されている。磁
性材料を用いたものでは、メモリ素子、磁気抵抗
素子、磁気ヘツドなどがあり、パーマロイ、セン
ダスト、Ni−ZnやMn−Znフエライトなどが使
用されている。 Conventionally, many sensors using semiconductor materials, magnetic materials, etc. have been developed and put into practical use as magnetic sensors that detect the amount of change or change in an external magnetic field. For example, devices using semiconductor materials include all devices and field effect transistor devices. These are -compounds such as InSb, GaAs, etc.
Si or Ge is mainly used. Items using magnetic materials include memory elements, magnetoresistive elements, magnetic heads, etc., and permalloy, sendust, Ni-Zn, Mn-Zn ferrite, etc. are used.
また、特開昭51−137641号公報には、線状の磁
性体に機械的、熱的処理を加え磁性線の表面近く
の層（第２の磁気的部分）の保磁力を変え、内部
（第１の磁気的部分）の保磁力より大きくし、こ
れに巻線してなる磁気デバイスが記載されてい
る。これは、第２の磁気的部分の保磁力が、第１
の磁気的部分の保磁力より大きくなつており、構
造的には、Fe−Co−Ｖ組成からなる磁性線の内
部が保磁力の小さい部分、外側の表面に近い部分
が保磁力の大きい部分からなる細線よりなつてい
る。 Furthermore, in Japanese Patent Application Laid-open No. 51-137641, a magnetic wire is mechanically and thermally treated to change the coercive force of the layer near the surface of the magnetic wire (second magnetic part), and the internal ( A magnetic device is described in which the coercive force is larger than that of the first magnetic part) and the magnetic device is wound around the coercive force. This means that the coercive force of the second magnetic part is
The coercive force is larger than the coercive force of the magnetic part of the magnetic wire, and structurally, the inner part of the magnetic wire consisting of Fe-Co-V composition has a small coercive force, and the part near the outer surface has a large coercive force. It is shaped like a thin line.
この磁気デバイスは、たとえば外部磁場の方向
と大きさを、細線の長手方向において変えたと
き、保磁力の大きい部分は、保磁力の小さい部分
と磁気的に相互作用が働いているから、両者の磁
化方向が同一方向で外部磁場と逆方向をとつてい
る場合、保磁力の小さい部分の磁化反転はその保
磁力HC1より大きく保磁力の大きい部分の保持力
より小さい外部磁場でおこる。 In this magnetic device, for example, when the direction and magnitude of the external magnetic field are changed in the longitudinal direction of a thin wire, the part with a large coercive force magnetically interacts with the part with a small coercive force, so that the two When the magnetization direction is the same and opposite to the external magnetic field, magnetization reversal of the portion with low coercive force occurs in an external magnetic field that is greater than the coercive force H C1 and smaller than the coercive force of the portion with high coercive force.
また、外部磁場と、保磁力の大きい部分の磁化
方向が同じで、保磁力の小さい部分の磁化方向の
みがそれらと逆方向をとつている場合は、外部磁
場が次第に大きくなつて保磁力の小さい部分の保
磁力と同程度になると保磁力の小さい部分の磁化
反転（外部磁場と同じ方向へ反転する）を保磁力
の大きい部分が助けることになり、HC1程度の磁
場で、より急しゆんに保磁力の小さい部分の磁化
反転を生じさせる。これら保磁力の小さい部分
の、外部磁場の影響による磁化反転により電磁誘
導現象が生じ、細線に巻いてあるピツクアツプコ
イルに電流が発生し、コイル両端に、前者の場合
は小さいパルス電圧が、後者の場合は、大きいパ
ルス電圧が得られる。このパルス電圧の大きさ、
急しゆんさは、単一磁性体よりなるものよりはる
かに優れている。また単一磁性からなるものは、
ピツクアツプコイルに発生するパルス幅が外部依
存し、外部磁場の変化が遅ければ広く、速ければ
狭くなるというように、一定したパルス電圧が得
られない。 In addition, if the external magnetic field and the magnetization direction of the part with a large coercive force are the same, and only the magnetization direction of the part with a small coercive force is opposite to them, the external magnetic field will gradually increase and the magnetization direction of the part with a small coercive force will be the same. When the coercive force of the part becomes about the same as that of the other part, the part with the larger coercive force will help the magnetization reversal of the part with the smaller coercive force (reversal in the same direction as the external magnetic field), and with a magnetic field of about H C1 , the magnetization reversal will be more rapid. causes magnetization reversal in the part with low coercive force. An electromagnetic induction phenomenon occurs due to the magnetization reversal of these parts with low coercive force due to the influence of an external magnetic field, and a current is generated in the pick-up coil wound around a thin wire. In this case, a large pulse voltage can be obtained. The magnitude of this pulse voltage,
The sharpness is far superior to those made of a single magnetic material. Also, those made of single magnetism are
The pulse width generated in the pick-up coil depends on the external environment, and the slower the change in the external magnetic field, the wider the width, and the faster the change in the external magnetic field, the narrower it becomes, making it impossible to obtain a constant pulse voltage.
この様に特開昭51−137641号公報の素子は、優
れた特性をもつ反面その製造方法は複雑なもので
あり、歩留りよく製造するのが困難である。また
直径250ミクロンの細線を用いているが、より小
さいデバイスを作成することは、非常に困難であ
る。 As described above, although the device disclosed in JP-A-51-137641 has excellent characteristics, its manufacturing method is complicated, and it is difficult to manufacture it with a high yield. Also, although a thin wire with a diameter of 250 microns is used, it is extremely difficult to create a smaller device.
さらにこのようなより小さい磁性デバイスを、
多数ならべてマトリツクスを作成したり、微小な
磁場を検出するような磁気センサを作成すること
はできない。 Furthermore, smaller magnetic devices such as
It is not possible to create a matrix by arranging a large number of them, or to create a magnetic sensor that detects minute magnetic fields.
本発明は、これらの諸問題、難点を大幅に解決
できる薄膜構造をした磁気センサを得る製造方法
を提供しようとするものである。 The present invention aims to provide a manufacturing method for obtaining a magnetic sensor having a thin film structure, which can largely solve these problems and difficulties.
薄膜化することにより、微小な磁気センサに仕
上げることができるため、微小な磁場検出をする
ことができる。 By making the film thinner, it is possible to create a minute magnetic sensor, which makes it possible to detect minute magnetic fields.
また薄膜形成技術とともにフオトリソ技術を用
いることができるので、集積度を高くでき、多数
の磁気センサからなるマトリツクスができる。 Furthermore, since photolithography technology can be used in conjunction with thin film formation technology, the degree of integration can be increased and a matrix consisting of a large number of magnetic sensors can be created.
さらに薄膜作成技術とフオトリソ技術により作
成するため、磁気センサの製造が容易である。 Furthermore, since the magnetic sensor is created using thin film technology and photolithography technology, it is easy to manufacture the magnetic sensor.
また量産性に富んでいる。 It is also highly suitable for mass production.
などのすぐれた特徴が得られる。 It provides excellent features such as:
以下本発明の一実施例を詳細に説明する。第１
図は本発明の一実施例の構成を示し、まず抵抗加
熱による真空蒸着法、電子線蒸着、あるいはスパ
ツタリング法により、基板１上に、２種類の磁性
薄膜２および３、磁気的ならびに電気的に絶縁体
の薄膜４、さらには、モリブデン（Mo）薄膜よ
りなるピツクアツプ用コイル５、リード線９、な
らびにエポキシ樹脂モールド６を形成して構成さ
れる。すなわち、まずガラス基板１上にFe−Ni
−CoあるいはFe−Co−Ｖの組成比の異なる２層
の磁性薄膜２，３を電子線蒸着で折出する。この
２層の磁性薄膜２，３は、保磁力が異なり、まず
基板１上に保磁力の小さい磁性薄膜２を析出し、
つづけて保磁力の大きい磁性薄膜３を重ねて析出
する。具体的には、たとえばFe−Ni−Co系で
は、保磁力の小さい磁性薄膜２（以後これをソフ
ト膜と呼ぶ）はFe：Ni：Co＝42：28：30（重量
比）、保磁力の大きい磁性薄膜３（以後これをハ
ード膜と呼ぶ）は、
Fe：Ni：Co＝52.5：17.5：30（重量比）を約
500ガウスの磁場中で電子線蒸着して基板上に析
出する。この２層の磁性薄膜２，３を、フオトリ
ソ技術を用いて、フオトレジストによりマスクを
形成し、のちエチツチング液で不用な部分をエツ
チングして、たんざく状の磁性薄膜２，３とし
た。この時、たんざく状の２層の磁性薄膜の長手
方向が膜析出時の磁場の方向と合致するように
し、常に磁化反転が、たんざく状膜の長手方向で
おこなわれる様にする。 An embodiment of the present invention will be described in detail below. 1st
The figure shows the configuration of an embodiment of the present invention. First, two types of magnetic thin films 2 and 3 are deposited on a substrate 1 by vacuum evaporation using resistance heating, electron beam evaporation, or sputtering. It is constructed by forming an insulating thin film 4, a pickup coil 5 made of a molybdenum (Mo) thin film, a lead wire 9, and an epoxy resin mold 6. That is, first, Fe-Ni is deposited on the glass substrate 1.
Two magnetic thin films 2 and 3 having different composition ratios of -Co or Fe-Co-V are deposited by electron beam evaporation. These two magnetic thin films 2 and 3 have different coercive forces, and first, the magnetic thin film 2 with a small coercive force is deposited on the substrate 1,
Subsequently, a magnetic thin film 3 having a large coercive force is deposited in an overlapping manner. Specifically, for example, in the Fe-Ni-Co system, the magnetic thin film 2 with a small coercive force (hereinafter referred to as a soft film) has a Fe:Ni:Co=42:28:30 (weight ratio), a coercive force of The large magnetic thin film 3 (hereinafter referred to as hard film) has a Fe:Ni:Co=52.5:17.5:30 (weight ratio) of approximately
Deposit on the substrate by electron beam evaporation in a 500 Gauss magnetic field. A photoresist mask was formed on the two-layered magnetic thin films 2 and 3 using a photolithography technique, and unnecessary portions were then etched with an etching solution to form tanzag-shaped magnetic thin films 2 and 3. At this time, the longitudinal direction of the two-layer tanzag-shaped magnetic thin film is made to coincide with the direction of the magnetic field during film deposition, so that magnetization reversal always occurs in the longitudinal direction of the tanzo-shaped film.
このたんざくの大きさは、40ミクロン×250ミ
クロンとした。なおエツチングは、0.1モルの塩
化第２鉄水溶液を用いた。 The size of this tanzaku was 40 microns x 250 microns. For etching, a 0.1 mol ferric chloride aqueous solution was used.
つぎに、電気的ならびに磁気的に絶縁体となる
膜４をたんざく状磁性膜２，３の上に全面に、ス
パツタリング法を用いて析出した。すなわち
SiO2膜を約5000Åの厚さに析出して絶縁膜４と
した。このSiO2膜の上にピツクアツプコイル用
としてMoを全面にスパツタリング法で析出し
た。膜厚は約10000Åである。 Next, a film 4 which becomes an electrically and magnetically insulating material was deposited over the entire surface of the tangy magnetic films 2 and 3 using a sputtering method. i.e.
An insulating film 4 was formed by depositing a SiO 2 film to a thickness of about 5000 Å. Mo was deposited on the entire surface of this SiO 2 film by sputtering to form a pick-up coil. The film thickness is approximately 10,000 Å.
たんざく状磁性膜の上にSiO2膜を介して析出
したMo膜をコイル状に形成するため、フオトリ
ソ技術でまずフオトレジストでコイルのマスクパ
ターニングをおこなつた。このMo膜をドライブ
エツチング装置により、エツチングし、コイル５
を形成した。 In order to form a coil-shaped Mo film deposited on the tanzaku-shaped magnetic film via an SiO 2 film, we first mask-patterned the coil using photoresist using photolithography technology. This Mo film is etched using a drive etching device, and the coil 5 is etched.
was formed.
次に、コイル５の電極パツド部７，７′以外に
フオトレジストを設け全面にCrを300Å程度蒸着
したのちさらに3000Å程度Auを蒸着し、のちア
セトン液中に入れ超音波をかけ電極パツド７，
７′以外のフオトレジストをその上に析出したAu
とともにリフトオフして除去した。このようにコ
イル形成までしたものをダイシングマシンで１チ
ツプごとに切断しこれをリード線８の設けてある
セラミツクベース１１上に接着し、ワイヤボンダ
ーを用い25ミクロンのAu線９で電極パツド７，
７とリード線９とを結合したのちエポキシ樹脂６
でトランスフアーモールドした。最後に、たんざ
く状磁性薄膜の片端面１０を研磨して薄膜磁気セ
ンサとした。 Next, a photoresist is provided on the electrode pads 7 and 7' of the coil 5, and Cr is deposited to about 300 Å on the entire surface, and then Au is further deposited to about 3000 Å.Then, the electrode pads 7 and 7 are placed in an acetone solution and subjected to ultrasonic waves.
Au with photoresist other than 7′ deposited on it
It was lifted off and removed. After forming a coil in this way, the chip was cut into individual chips using a dicing machine, which was then glued onto a ceramic base 11 on which lead wires 8 were provided. Using a wire bonder, a 25 micron Au wire 9 was used to bond electrode pads 7,
After connecting 7 and lead wire 9, epoxy resin 6
I made a transfer mold. Finally, one end surface 10 of the tanzaku-shaped magnetic thin film was polished to obtain a thin film magnetic sensor.
このようにして作成した薄膜磁気センサを外部
磁場中に入れ、外部磁場の方向、大きさを変える
と、前述したように、ハード膜と相互作用をして
いるソフト膜の磁化方向がハード膜の磁化方向と
逆で、外部磁場をハード膜の磁化方向と同じ方向
を向け、外部磁場をしだいに大きくしてソフト膜
の保磁力程度になると、ソフト膜の磁化方向がハ
ード膜のたすけをうけて急しゆんに磁化反転をお
こし、外部磁場と同じ方向をむく、このとき、薄
膜磁気センサに設けてあるピツクアツプ用コイル
５には、電磁誘導現象で生じた電流が流れるた
め、コイルの両端にはパルス電圧が発生する。こ
のパルス電圧を信号として使用することができ
る。 When the thin film magnetic sensor created in this way is placed in an external magnetic field and the direction and magnitude of the external magnetic field are changed, the magnetization direction of the soft film interacting with the hard film changes from that of the hard film. If the external magnetic field is directed in the same direction as the hard film's magnetization direction, opposite to the magnetization direction, and the external magnetic field is gradually increased until it reaches the coercive force of the soft film, the soft film's magnetization direction will be assisted by the hard film. The magnetization suddenly reverses and points in the same direction as the external magnetic field. At this time, the current generated by the electromagnetic induction phenomenon flows through the pick-up coil 5 provided in the thin-film magnetic sensor, so there is a current at both ends of the coil. A pulse voltage is generated. This pulsed voltage can be used as a signal.
以下に本発明の具体的実施例を詳細に説明す
る。 Specific embodiments of the present invention will be described in detail below.
実施例 １
磁性材料としてFe−Ni−Coを用いソフト膜２
には、Fe：Ni：Co＝42：28：30（重量％）のも
の、ハード膜３にはFe：Ni：Co＝52.5：17.5：
30（重量％）のものを用いた。基板１には熱膨張
係数を上記磁性材料にできるだけ合致させるため
に、ガラス基板を用いることにして、ガラスの組
成を検討し、ソーダライムガラスで、95×10-7／
℃、の熱膨張係数のものを得た。なおソフト膜
２、ハード膜３の熱膨張係数は、両者とも約98×
10-7／℃であつた。Example 1 Soft film 2 using Fe-Ni-Co as magnetic material
For hard film 3, Fe:Ni:Co=42:28:30 (weight%), and for hard film 3, Fe:Ni:Co=52.5:17.5:
30 (weight%) was used. We decided to use a glass substrate for the substrate 1 in order to match the coefficient of thermal expansion as closely as possible to that of the above magnetic material, and after studying the composition of the glass, we decided to use soda lime glass with a coefficient of 95×10 -7 /
A thermal expansion coefficient of ℃ was obtained. The thermal expansion coefficients of soft film 2 and hard film 3 are both approximately 98×
It was 10 -7 /℃.
この基板１の上に、電子線蒸着により500ガウ
スの磁場中でまずソフト膜２を析出し、膜厚が
2000Åを得た。次に、真空槽の真空を破らず、つ
ずけてハード膜３をソフト膜２に重ねて析出し
た。ハード膜３の膜厚は1700Å程度であつた。得
られたソフト膜２の保磁力は1.5エルステツド、
ハード膜３は22エルステツドであつた。このよう
にして形成した２層からなる磁性薄膜を前述した
ようなフオトリソ技術を用いて、40ミクロン×
250ミクロンのたんざく状の磁性薄膜とした。こ
の時のエツチング溶液には、0.1mol％の塩化第
２鉄（FeCl3・6H2O）水溶液を用い、エツチン
グ速度が、30Å／sec程度条件でエツチングした。
このとき、たんざく状の磁性薄膜の長手方向が磁
性薄膜蒸着時の磁場の方向と合致するようにす
る。 On this substrate 1, a soft film 2 is first deposited by electron beam evaporation in a magnetic field of 500 Gauss, and the film thickness is
Obtained 2000Å. Next, the hard film 3 was successively deposited on the soft film 2 without breaking the vacuum in the vacuum chamber. The thickness of the hard film 3 was about 1700 Å. The coercive force of the obtained soft film 2 is 1.5 oersted,
Hard film 3 was 22 oersted. The two-layered magnetic thin film thus formed was coated with a 40 micron x
It was made into a 250 micron tanzaku-shaped magnetic thin film. A 0.1 mol % ferric chloride (FeCl 3 .6H 2 O) aqueous solution was used as the etching solution at this time, and etching was performed at an etching rate of about 30 Å/sec.
At this time, the longitudinal direction of the tanzaku-shaped magnetic thin film is made to coincide with the direction of the magnetic field during deposition of the magnetic thin film.
２層の磁性薄膜をたんざく状にしたのち、磁性
薄膜のある基板面全面にSiO2膜４をスパツタリ
ング法により析出した。SiO2膜４の厚みは約
5000Åであつた。 After forming the two-layer magnetic thin film into a tanzak shape, a SiO 2 film 4 was deposited by sputtering on the entire surface of the substrate where the magnetic thin film was located. The thickness of SiO 2 film 4 is approximately
It was 5000Å.
さらに、たんざく状磁性薄膜の上にピツクアツ
プコイルを設けるため、SiO2膜の上全面にMo膜
をスパツタリング法で析出した。Mo膜の厚み
は、１ミクロンとした。このMo膜をフオトリソ
技術でまずたんざく状磁性薄膜の上にフオトレジ
ストでコイル状のマスクを作成し、次にドライエ
ツチング装置で、CF4ガスを用いて余分なMo膜
をエツチングして除去しコイル５を設けた。コイ
ル５の巻数は８ターンであつた。 Furthermore, in order to provide a pick-up coil on the tanzaku-shaped magnetic thin film, a Mo film was deposited on the entire surface of the SiO 2 film by sputtering. The thickness of the Mo film was 1 micron. First, a coil-shaped mask was created using photoresist on the tanzaku-shaped magnetic thin film using photolithography technology, and then the excess Mo film was removed by etching using CF4 gas using a dry etching device. A coil 5 was provided. The number of turns of the coil 5 was 8 turns.
つぎに、抵抗加熱の真空蒸着法により、Crを
300Å析出し、つづいてAuを3000Å析出して電極
パツド７，７を形成した。もちろん電極パツド以
外のところはフオトリソ技術によりフオトレジス
トでマスクしてある。 Next, we applied Cr using a vacuum evaporation method using resistance heating.
After depositing 300 Å, Au was deposited to 3000 Å to form electrode pads 7, 7. Of course, the parts other than the electrode pads are masked with photoresist using photolithography technology.
アセトン溶液中にAuをつけた基板を入れて、
超音波洗浄器にかけ、フオトレジストのマスク部
を、リフトオフして除去した。 Put the substrate with Au in an acetone solution,
The mask portion of the photoresist was lifted off and removed using an ultrasonic cleaner.
つぎに、ダイシング装置で、コイルを設けたた
んざく状磁性薄膜からなる１チツプサイズ（１×
1.2（ミリメートル））単位に切断した。このチツ
プをリード線８を有するセラミツク基板１１（サ
イズは２ミリメートル角）上に接着し、コイル５
の電極パツド７，７′とリード線部とを25ミクロ
ンのAu線９でワイヤボンドして結合したのちエ
ポキシ樹脂６でトランスフアモールドして薄膜磁
気センサとした。この様にして作成した薄膜磁気
センサを外部磁場中に、センサの磁化方向と外部
磁場の方向とが平行になるようにして入れ、外部
磁場の方向、大きさを変えてセンサのコイルに発
生するパルス電圧を測定した。実際には、外部磁
場にはソレノイド磁石を用い、1KHzの正弦波電
流を流して駆動した。外部磁場の大きさを変えた
ときのピツクアツプコイルに発生するパルス電圧
の様子を第２図イ，ロに示す。第２図中のイは、
外部磁場とソフト膜・ハード膜の磁化方向が逆の
ときであり外部磁場を大きくして行くと、ソフト
膜が外部磁場の方向に磁化反転しハード膜の磁化
方向は反転しないが、外部磁場をさらに大きくす
るとハード膜の磁化方向も反転する。ロは、外部
磁場とハード膜の磁化方向が同じでソフト膜の磁
化方向がその逆のときの特性であり外部磁場を大
きくして行くとソフト膜の保磁力近くで、ソフト
膜の磁化反転が起るがハード膜の相互作用によつ
てこの磁化反転が助けられて一斉におこる。その
ためパルス電圧は大きく、しかも急しゆんとな
る。 Next, using a dicing machine, one chip size (1×
Cut into 1.2 (mm) units. This chip is glued onto a ceramic substrate 11 (2 mm square) having lead wires 8, and the coil 5
The electrode pads 7, 7' and the lead wire portion were connected by wire bonding with a 25 micron Au wire 9, and then transfer molded with an epoxy resin 6 to form a thin film magnetic sensor. The thin film magnetic sensor created in this way is placed in an external magnetic field so that the direction of magnetization of the sensor is parallel to the direction of the external magnetic field, and the direction and magnitude of the external magnetic field is changed to generate it in the sensor coil. The pulse voltage was measured. In reality, a solenoid magnet was used for the external magnetic field, and a 1KHz sine wave current was applied to drive it. Figure 2 A and B show the pulse voltage generated in the pickup coil when the magnitude of the external magnetic field is changed. A in Figure 2 is
When the external magnetic field and the magnetization direction of the soft film/hard film are opposite to each other, and as the external magnetic field is increased, the magnetization of the soft film reverses in the direction of the external magnetic field, and the magnetization direction of the hard film does not reverse. If it is made even larger, the magnetization direction of the hard film will also be reversed. B is a characteristic when the external magnetic field and the hard film have the same magnetization direction, but the soft film has the opposite magnetization direction.As the external magnetic field increases, the magnetization of the soft film is reversed near the coercive force of the soft film. However, this magnetization reversal is assisted by the interaction of the hard film and occurs all at once. Therefore, the pulse voltage is large and becomes abrupt.
外部磁場が大きくなるとイの場合もロの場合も
パルス電圧の大きさは同程となる。 When the external magnetic field increases, the magnitude of the pulse voltage becomes similar in both cases A and B.
実施例 ２
実施例１と同様な方法で薄膜磁気センサを作成
するがソフト膜、ハード膜の磁性材料をFe−Co
−Ｖとした。すなわちソフト膜２の磁性材料は
Fe：Co：Ｖ＝45：53.5：1.5（重量比）のもの、ハ
ード膜の磁性材料はFe：Co：Ｖ＝45：52.5：2.5
（重量比）のものとした。Example 2 A thin film magnetic sensor was created in the same manner as in Example 1, but the magnetic materials of the soft and hard films were replaced with Fe-Co.
−V. In other words, the magnetic material of the soft film 2 is
Fe:Co:V=45:53.5:1.5 (weight ratio), the magnetic material of the hard film is Fe:Co:V=45:52.5:2.5
(weight ratio).
実施例１と同様にして外部磁場による薄膜磁気
センサのパルス特性を測定した。その結果は、第
３図のようになつた。磁性薄膜は、各単一膜のと
きの保磁力はソフト膜：２エルステツド、ハード
膜；20エルステツドであつた。第３図のイ，ロは
第２図と同様な特性を示したものである。 The pulse characteristics of the thin film magnetic sensor using an external magnetic field were measured in the same manner as in Example 1. The result was as shown in Figure 3. The coercive force of each single magnetic thin film was 2 oersted for the soft film and 20 oersted for the hard film. A and B in FIG. 3 show characteristics similar to those in FIG. 2.
以上のように本発明によれば従来の方法では得
られない微小なセンサを製造することができ、こ
れにより微小磁場の検出が可能となる。また、本
発明においては、フオトリソ技術を利用すること
により基板上に多数の微小な薄膜磁気センサをな
らべて作成できることから、集積化が容易でマト
リツクス化しやすい。また製造面からみても一度
に多数ケの作成ができる。 As described above, according to the present invention, it is possible to manufacture a minute sensor that cannot be obtained by conventional methods, thereby making it possible to detect a minute magnetic field. Furthermore, in the present invention, a large number of minute thin-film magnetic sensors can be fabricated by arranging them on a substrate by using photolithography technology, which facilitates integration and matrix formation. Also, from a manufacturing perspective, many pieces can be made at once.
第１図Ａは本発明の方法で製造した薄膜磁気セ
ンサの断面図、同Ｂは同平面図、第２図および第
３図は同薄膜磁気センサの特性図である。
１……基板、２，３……磁性薄膜、４……絶縁
体薄膜、５……ピツクアツプ用コイル、６……樹
脂モールド。
FIG. 1A is a sectional view of a thin film magnetic sensor manufactured by the method of the present invention, FIG. 1B is a plan view thereof, and FIGS. 2 and 3 are characteristic diagrams of the same thin film magnetic sensor. 1...Substrate, 2, 3...Magnetic thin film, 4...Insulator thin film, 5...Pickup coil, 6...Resin mold.
Claims (1)
２層重ねて析出する工程と、フオトリソ技術によ
りこの２層の磁性薄膜をたんざく状に形成する工
程と、たんざく状の磁性薄膜上に磁気的かつ電気
的に絶縁性の薄膜を析出する工程と、非磁性金属
よりなる薄膜を前記絶縁性の薄膜の上に形成させ
これをフオトリソ技術を用いタンザク状の２層の
磁性薄膜上にコイル形成させ電磁パツドを設けて
チツプ化した後、リード線つき基台の上に接着
し、樹脂でモールドする工程を含む薄膜磁気セン
サの製造方法。 ２ 特許請求の範囲第１項において、保磁力の異
なる磁性膜は、Fe，NiおよびCoよりなり、その
組成比率の異なる２層の磁性薄膜よりなることを
特徴とする薄膜磁気センサの製造方法。 ３ 特許請求の範囲第１項において、保持力の異
なる磁性薄膜は、Fe，Co、およびＶよりなり、
その組成比率の異なる２層の磁性薄膜よりなるこ
とを特徴とする薄膜磁気センサの製造方法。[Claims] 1. A step of depositing two layers of magnetic thin films with different coercive forces on a non-magnetic substrate, a step of forming these two layers of magnetic thin films in a tanzak shape by photolithography, and A step of depositing a magnetically and electrically insulating thin film on a shaped magnetic thin film, and forming a thin film made of a non-magnetic metal on the insulating thin film and depositing this into a two-layer tanzak shape using photolithography technology. A method for manufacturing a thin film magnetic sensor, which includes the steps of forming a coil on a magnetic thin film, providing an electromagnetic pad, making a chip, adhering it to a base with lead wires, and molding it with resin. 2. The method of manufacturing a thin film magnetic sensor according to claim 1, wherein the magnetic films having different coercive forces are composed of two layers of magnetic thin films made of Fe, Ni, and Co and having different composition ratios. 3. In claim 1, the magnetic thin films having different coercive forces are made of Fe, Co, and V,
A method for manufacturing a thin film magnetic sensor, comprising two layers of magnetic thin films having different composition ratios.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56131128A JPS5832179A (en) | 1981-08-20 | 1981-08-20 | Production of thin film magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56131128A JPS5832179A (en) | 1981-08-20 | 1981-08-20 | Production of thin film magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5832179A JPS5832179A (en) | 1983-02-25 |
| JPH0224347B2 true JPH0224347B2 (en) | 1990-05-29 |
Family
ID=15050633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56131128A Granted JPS5832179A (en) | 1981-08-20 | 1981-08-20 | Production of thin film magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832179A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2201786B (en) * | 1987-03-06 | 1990-11-28 | Gen Electric Plc | Magnetometers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5912142B2 (en) * | 1977-09-28 | 1984-03-21 | 昭 松下 | magnetically sensitive element |
| JPS54128775A (en) * | 1978-03-27 | 1979-10-05 | Philips Nv | Thin layer magnetic field sensor |
-
1981
- 1981-08-20 JP JP56131128A patent/JPS5832179A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5832179A (en) | 1983-02-25 |
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