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JPH0228122B2 - - Google Patents
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JPH0228122B2 - - Google Patents

Info

Publication number
JPH0228122B2
JPH0228122B2 JP57049126A JP4912682A JPH0228122B2 JP H0228122 B2 JPH0228122 B2 JP H0228122B2 JP 57049126 A JP57049126 A JP 57049126A JP 4912682 A JP4912682 A JP 4912682A JP H0228122 B2 JPH0228122 B2 JP H0228122B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
light source
thermal expansion
fixed frame
coupling lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57049126A
Other languages
Japanese (ja)
Other versions
JPS58168024A (en
Inventor
Koichi Yabuchi
Yoshito Tsunoda
Norya Kaneda
Shigeru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57049126A priority Critical patent/JPS58168024A/en
Publication of JPS58168024A publication Critical patent/JPS58168024A/en
Publication of JPH0228122B2 publication Critical patent/JPH0228122B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02253Out-coupling of light using lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Description

【発明の詳細な説明】 本発明は、半導体レーザを光源とする光学系に
係り、特に高精度の平行光を要求する光学系で使
用温度範囲の大きい装置に好適な光源装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical system using a semiconductor laser as a light source, and more particularly to a light source device suitable for an optical system that requires highly accurate parallel light and is used in a wide operating temperature range.

従来の光源装置では、温度変化に伴う熱膨張に
よる半導体レーザの発光点とカツプリングレンズ
間の距離変化を無視していたので使用温度範囲の
大きい装置において高精度の平行光を出力する事
が不可能だつた。
Conventional light source devices ignore changes in the distance between the semiconductor laser's light emitting point and the coupling lens due to thermal expansion caused by temperature changes, making it difficult to output highly accurate parallel light in devices that have a wide operating temperature range. It was possible.

本発明の目的は温度変化による影響のない高精
度の平行光を出力する光源装置を提供することに
ある。
An object of the present invention is to provide a light source device that outputs highly accurate parallel light that is not affected by temperature changes.

半導体レーザ光源装置について第1図を用いて
説明する。半導体レーザの発光点がカツプリング
レンズの焦点位置に存在すれば、カツプリングレ
ンズからの出力光は平行光となる。半導体レーザ
の発光点がカツプリングレンズの焦点位置からズ
レた場合、カツプリングレンズからの出力光は平
行光でなくなる。第2a図に前記半導体レーザ光
源装置の概略図を示す。半導体レーザ架台1とカ
ツプリングレンズ2は固定枠4によつて連結され
ている。温度変化が生じた場合、固定枠4の熱膨
張により半導体レーザの発光点8とカツプリング
レンズ下端9との距離が変化する。この距離変化
は固定枠4が半導体レーザ架台1とカツプリング
レンズ2を直接連結する構造の場合生じる。本発
明では第2b図に示すように固定枠4と熱膨張係
数が異なる熱膨張吸収ダンパー5を固定枠4と半
導体レーザ架台5の間、固定枠4とカツプリング
レンズ2の間に設置し、温度変化に伴なうカツプ
リングレンズ下端9と半導体レーザ発光点8の距
離変化をキヤンセルする方法を案出した。ただし
熱膨張吸収ダンパー5はどちらか一方でも可。カ
ツプリングレンズ2は円筒形のレンズ収納体の中
にレンズが固定されており、レーザ光を平行な光
へとする役割をもつ。
The semiconductor laser light source device will be explained using FIG. 1. If the light emitting point of the semiconductor laser is located at the focal point of the coupling lens, the output light from the coupling lens becomes parallel light. If the light emitting point of the semiconductor laser deviates from the focal position of the coupling lens, the output light from the coupling lens will no longer be parallel light. FIG. 2a shows a schematic diagram of the semiconductor laser light source device. The semiconductor laser mount 1 and the coupling lens 2 are connected by a fixed frame 4. When a temperature change occurs, the distance between the light emitting point 8 of the semiconductor laser and the lower end 9 of the coupling lens changes due to thermal expansion of the fixed frame 4. This distance change occurs when the fixed frame 4 has a structure in which the semiconductor laser mount 1 and the coupling lens 2 are directly connected. In the present invention, as shown in FIG. 2b, a thermal expansion absorbing damper 5 having a different thermal expansion coefficient from that of the fixed frame 4 is installed between the fixed frame 4 and the semiconductor laser mount 5, and between the fixed frame 4 and the coupling lens 2. A method has been devised to cancel changes in the distance between the lower end 9 of the coupling lens and the semiconductor laser light emitting point 8 due to temperature changes. However, the thermal expansion absorbing damper 5 can be used with either one. The coupling lens 2 has a lens fixed in a cylindrical lens housing, and has the role of converting laser light into parallel light.

第2図bにおいて固定枠4が熱膨張してレンズ
2とレーザ架台1を支持する部分の間の距離が伸
びたとき、ダンパー5を固定枠4より熱膨張係数
の大きいものとし、固定枠4に固定されたダンパ
ーのよりレンズ2またはレーザ発光源8に近い部
分にレンズ2またはレーザ架台1を固定すると、
固定枠4の膨張による伸びをダンパー5の伸びが
打ち消すように働くから、ダンパー5の大きさ、
熱膨張係数を適当に設定すればレンズと光源との
間の距離を一定に保つことができるのである。
In FIG. 2b, when the fixed frame 4 thermally expands and the distance between the lens 2 and the part supporting the laser mount 1 increases, the damper 5 is made to have a larger coefficient of thermal expansion than the fixed frame 4, and the fixed frame 4 When the lens 2 or the laser mount 1 is fixed to a part of the damper fixed to the lens 2 or the laser light source 8,
Since the expansion of the damper 5 acts to cancel out the expansion due to the expansion of the fixed frame 4, the size of the damper 5,
By appropriately setting the coefficient of thermal expansion, the distance between the lens and the light source can be kept constant.

以下、本発明の一実施例を第3図により説明す
る。第3図は半導体レーザを光源とする光源装置
の図である。前記光源装置は、半導体レーザを固
定する半導体レーザ架台1と、半導体レーザが発
生する熱を逃がすためのヒートシンク3と、レー
ザ光を平行光に変換するカツプリングレンズ2
と、前記半導体レーザ架台1とカツプリングレン
ズ2を連結固定する固定枠4と、熱膨張による前
記カツプリングレンズ2と半導体レーザ発光点と
の距離変化を吸収するためにカツプリングレンズ
2と固定枠4の間に設置した熱膨張吸収ダンパー
5と、カツプリングレンズ2の位置調節のための
微調ネジ6とから構成する。第4図は、前記光源
装置の断面図である。第4図において、固定枠4
の熱膨張率をKaとする。熱膨張吸収ダンパー5
の熱膨張率をKbとし、カツプリングレンズと固
定枠を連結する。半導体レーザ架台1の熱膨張率
をKcとした場合、温度変化Tにおける固定枠5
の熱膨張は、 (l1+l2+l3)×T×Ka となり、abの半導体レーザ1の熱膨張は、 l1×T×Kc cdの熱膨張吸収ダンパー5の熱膨張は、 l3×T×Kb この時、bcが一定であれば良いので、 (l1+l2+l3)×T×Ka−l1×T×Kc −l3×T×Kb=0 となり、 l3=l1×(Ka−Kc)+l2×Ka/Kb−Ka を満足する形状にすれば温度変化の影響がない平
行光を出力する光源装置となる。固定枠にアルミ
ニウムを使用した場合、Ka=23×10-6半導体レ
ーザ架台1に銅を使用した場合、Kc=16.7×
10-6、熱膨張吸収ダンパーにポリメチルメタアク
リレートを使用した場合、Kb=80×10-6、この
時、l1=3mm,l2=1mmとすると l3=0.74mm となる。
An embodiment of the present invention will be described below with reference to FIG. FIG. 3 is a diagram of a light source device using a semiconductor laser as a light source. The light source device includes a semiconductor laser mount 1 for fixing a semiconductor laser, a heat sink 3 for dissipating heat generated by the semiconductor laser, and a coupling lens 2 for converting laser light into parallel light.
, a fixing frame 4 for connecting and fixing the semiconductor laser mount 1 and the coupling lens 2, and a fixing frame 4 for coupling the coupling lens 2 and the fixing frame to absorb changes in the distance between the coupling lens 2 and the semiconductor laser light emitting point due to thermal expansion. 4, and a fine adjustment screw 6 for adjusting the position of the coupling lens 2. FIG. 4 is a sectional view of the light source device. In Fig. 4, the fixed frame 4
Let Ka be the coefficient of thermal expansion of . Thermal expansion absorption damper 5
The coefficient of thermal expansion of is Kb, and the coupling lens and fixed frame are connected. When the coefficient of thermal expansion of the semiconductor laser mount 1 is Kc, the fixed frame 5 at a temperature change T
The thermal expansion of is (l 1 + l 2 + l 3 ) × T × Ka, and the thermal expansion of the semiconductor laser 1 of ab is l 1 × T × Kc The thermal expansion of the thermal expansion absorbing damper 5 of cd is l 3 × T×Kb At this time, it is sufficient that bc is constant, so (l 1 +l 2 +l 3 )×T×Ka−l 1 ×T×Kc −l 3 ×T×Kb=0, and l 3 =l 1 If the shape satisfies ×(Ka−Kc)+l 2 ×Ka/Kb−Ka, a light source device that outputs parallel light that is not affected by temperature changes can be obtained. When aluminum is used for the fixing frame, Ka=23×10 -6 When copper is used for semiconductor laser mount 1, Kc=16.7×
10 -6 , when polymethyl methacrylate is used for the thermal expansion absorbing damper, Kb = 80 x 10 -6 , and in this case, if l 1 = 3 mm and l 2 = 1 mm, then l 3 = 0.74 mm.

又、固定枠にステンレス鋼を使用した場合、
Ka=16.4×10-6、半導体レーザ架台1に銅、熱
膨張吸収ダンパーにアルミニウムを使用した場
合、 l1=3mm、l2=1mmとすると l3=2.4mm となる。
Also, if stainless steel is used for the fixed frame,
When Ka=16.4×10 -6 , copper is used for the semiconductor laser mount 1, and aluminum is used for the thermal expansion absorbing damper, l 1 =3 mm and l 2 =1 mm, then l 3 =2.4 mm.

半導体レーザを冷却する場合の実施例を第5図
により説明する。ペルチユ素子7によつて半導体
レーザ架台1を冷却する。この時ペルチユ素子7
と半導体レーザ架台1は一定温度に保たれるため
熱膨張しないので熱膨張の関係式は、 (l1+l2+l3)×T×Ka−l3×T×Kb=0 となり、l3=(l1+l2)×Ka/Kb−Kaとなる熱膨張吸収
ダン パー5によつて温度変化の影響がない平行光を出
力する光源装置となる。
An embodiment in which a semiconductor laser is cooled will be described with reference to FIG. The semiconductor laser mount 1 is cooled by the Peltier element 7. At this time, Perchile element 7
Since the semiconductor laser mount 1 is kept at a constant temperature and does not thermally expand, the relational expression for thermal expansion is (l 1 +l 2 +l 3 )×T×Ka−l 3 ×T×Kb=0, and l 3 = The thermal expansion absorbing damper 5 that satisfies (l 1 +l 2 )×Ka/Kb−Ka provides a light source device that outputs parallel light that is not affected by temperature changes.

熱膨張吸収ダンパー5の素材として接着剤を使
用した実施例を第6図に示す。固定枠4の熱膨張
は (l1+l2+l3+l4)×T×Ka となり、熱膨張の関係式は、 (l1+l2+l3+l4)×T×Ka−l1×T×Kc −l3×T×Kb=0 となりl3={(l1+l2+l4)×Ka−l1×Kc}/(Kb
−Ka)を満足する熱膨張吸収ダンパー5によつ
て温度変化の影響がない平行光を出力する光源装
置となる。
FIG. 6 shows an embodiment in which an adhesive is used as the material for the thermal expansion absorbing damper 5. The thermal expansion of the fixed frame 4 is (l 1 +l 2 +l 3 +l 4 )×T×Ka, and the relational expression for thermal expansion is (l 1 +l 2 +l 3 +l 4 )×T×Ka−l 1 ×T× Kc −l 3 ×T×Kb=0, and l 3 = {(l 1 +l 2 +l 4 )×Ka−l 1 ×Kc}/(Kb
-Ka), the light source device outputs parallel light without being affected by temperature changes.

本発明によれば、温度変化による影響のない高
精度の平行光を出力できるので、温度依存性の小
さい光学系が可能となる。
According to the present invention, since it is possible to output highly accurate parallel light that is not affected by temperature changes, an optical system with small temperature dependence is possible.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は半導体レーザとカツプリングレンズの
関連図、第2a図は従来の半導体レーザ光源装置
の慨念図、第2b図は本発明の半導体レーザ光源
装置の概念図、第3図は本発明の一実施例を示す
図、第4図は第3図の実施例の断側面図、第5図
は本発明の他の実施例を示す図、第6図は更に他
の実施例を示す図。 1…半導体レーザ、2…カツプリングレンズ、
3…放熱用ヒートシンク、4…固定枠、5…熱膨
張吸収ダンパー、6…微調ネジ、7…ペルチユ素
子、8…レーザ発光点、9…カツプリングレンズ
下端。
Fig. 1 is a related diagram of a semiconductor laser and a coupling lens, Fig. 2a is a conceptual diagram of a conventional semiconductor laser light source device, Fig. 2b is a conceptual diagram of a semiconductor laser light source device of the present invention, and Fig. 3 is a conceptual diagram of a semiconductor laser light source device of the present invention. 4 is a cross-sectional side view of the embodiment of FIG. 3, FIG. 5 is a diagram showing another embodiment of the present invention, and FIG. 6 is a diagram showing still another embodiment. . 1... Semiconductor laser, 2... Coupling lens,
3... Heat sink for heat dissipation, 4... Fixed frame, 5... Thermal expansion absorption damper, 6... Fine adjustment screw, 7... Pertuille element, 8... Laser emission point, 9... Lower end of coupling lens.

Claims (1)

【特許請求の範囲】[Claims] 1 光源と、前記光源の光を受けるレンズと、前
記光源及びレンズが固定される固定枠とを有し、
かつ、前記光源及びレンズの少なくとも一方は、
その一部が前記固定枠に固定され前記固定枠とは
異なる熱膨張係数をもつ部材の、前記固定枠と部
材との固定された位置より前記レンズと光源との
距離を短かくする位置に固定されることによつて
前記固定枠に固定されることを特徴とする光源装
置。
1 comprising a light source, a lens that receives light from the light source, and a fixed frame to which the light source and lens are fixed;
and at least one of the light source and the lens,
A member, a part of which is fixed to the fixed frame and has a coefficient of thermal expansion different from that of the fixed frame, is fixed at a position that makes the distance between the lens and the light source shorter than the fixed position of the fixed frame and the member. A light source device, characterized in that the light source device is fixed to the fixed frame by being fixed to the fixed frame.
JP57049126A 1982-03-29 1982-03-29 Light source device Granted JPS58168024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57049126A JPS58168024A (en) 1982-03-29 1982-03-29 Light source device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57049126A JPS58168024A (en) 1982-03-29 1982-03-29 Light source device

Publications (2)

Publication Number Publication Date
JPS58168024A JPS58168024A (en) 1983-10-04
JPH0228122B2 true JPH0228122B2 (en) 1990-06-21

Family

ID=12822368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57049126A Granted JPS58168024A (en) 1982-03-29 1982-03-29 Light source device

Country Status (1)

Country Link
JP (1) JPS58168024A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418700A (en) * 1992-07-22 1995-05-23 Corning Incorporated Laser light source module and method
US5640407A (en) * 1995-04-28 1997-06-17 Accu-Sort Systems, Inc. Temperature regulating laser diode assembly
JP5412049B2 (en) * 2008-04-09 2014-02-12 矢崎総業株式会社 Optical communication module
US8731347B2 (en) 2012-10-11 2014-05-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Lens standoff and protection for optical communication systems
US11391904B2 (en) * 2019-11-21 2022-07-19 Eotech, Llc Temperature stabilized holographic sight

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543577A (en) * 1978-09-21 1980-03-27 Canon Inc Light source device
JPS56113109A (en) * 1980-02-14 1981-09-05 Fujitsu Ltd Optical system supporting structure

Also Published As

Publication number Publication date
JPS58168024A (en) 1983-10-04

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