JPH0228248B2 - - Google Patents
Info
- Publication number
- JPH0228248B2 JPH0228248B2 JP59225942A JP22594284A JPH0228248B2 JP H0228248 B2 JPH0228248 B2 JP H0228248B2 JP 59225942 A JP59225942 A JP 59225942A JP 22594284 A JP22594284 A JP 22594284A JP H0228248 B2 JPH0228248 B2 JP H0228248B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cushion member
- fibers
- metal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
- H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は半導体の製造に使用されるシリコンウ
エハ等の基板を冷却する装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for cooling a substrate such as a silicon wafer used in the manufacture of semiconductors.
(従来の技術)
従来、真空室内でこの種基板にイオン注入等の
処理を施すと発熱して基板が損傷する危険がある
ので、該基板を冷却水を循環させた基板ホルダで
保持して冷却するを一般とするが、基板は熱によ
り変形を生じ易く、これによつて基板ホルダとの
接触が離れると、冷却性が悪化し、基板にクラツ
クが発生する不都合があるので、基板ホルダの表
面に、ポリ四フツ化エチレンの薄膜で覆われたシ
リコンゴム製のクツシヨン部材を設け、これに基
板を当接させることにより基板の変形による離反
を防ぎ、冷却性を維持している。(Prior art) Conventionally, when performing ion implantation or other processing on this type of substrate in a vacuum chamber, there is a risk of heat generation and damage to the substrate, so the substrate was cooled by being held in a substrate holder that circulated cooling water. However, the substrate is easily deformed by heat, and if it loses contact with the substrate holder, the cooling performance deteriorates and cracks occur in the substrate, so the surface of the substrate holder is A cushion member made of silicone rubber covered with a thin film of polytetrafluoroethylene is provided, and by bringing the substrate into contact with this cushion member, the substrate is prevented from separating due to deformation and cooling performance is maintained.
(発明が解決しようとする問題点)
近時のように基板のイオン注入処理のために大
電流、高電圧が使用されると基板の発熱量が多く
なり、その熱流束が1w/cm2にも達するようにな
ると接触熱伝達係数、熱伝導性の乏しいポリ四フ
ツ化エチレンの薄膜で覆われたシリコンゴム製の
クツシヨン部材では基板を冷却することが困難に
なる。イオン注入処理中、シリコン製の基板の温
度は100℃近傍にまで冷却されていることが好ま
しい。(Problem to be solved by the invention) When large currents and high voltages are used for ion implantation processing of substrates as in recent times, the amount of heat generated by the substrate increases, and the heat flux decreases to 1w/cm 2. When the contact heat transfer coefficient and thermal conductivity reach a certain level, it becomes difficult to cool the substrate with a cushion member made of silicone rubber covered with a thin film of polytetrafluoroethylene, which has poor contact heat transfer coefficient and thermal conductivity. During the ion implantation process, the temperature of the silicon substrate is preferably cooled to around 100°C.
本発明は主として発熱量の多い状況で処理され
る基板の冷却に適した耐久性の良い冷却装置を提
供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a highly durable cooling device that is suitable for cooling substrates that are processed under conditions that generate a large amount of heat.
(問題点を解決するための手段)
本発明では、真空室内で処理される基板をクツ
シヨン部材を介して冷却水の循環等により冷却さ
れた基板ホルダで保持するようにしたものに於い
て、該クツシヨン部材を、エラストマに金属、炭
素等の粉末又は繊維を混入したもので構成すると
共に、該基板に当接する該クツシヨン部材の表面
に、金属薄膜を形成するようにした。(Means for Solving the Problems) In the present invention, a substrate to be processed in a vacuum chamber is held by a substrate holder cooled by circulation of cooling water through a cushion member. The cushion member is made of an elastomer mixed with powder or fibers of metal, carbon, etc., and a thin metal film is formed on the surface of the cushion member that comes into contact with the substrate.
(作用)
基板はクツシヨン部材を介して基板ホルダに保
持され、真空室内に於いてイオン注入等の処理が
施されるが、該クツシヨン部材はシリコンゴム等
のエラストマに熱良導性の金属、炭素等の粉末又
は繊維を混入したもので構成されており、さらに
該基板に当接する該クツシヨン部材の表面には熱
良導性の金属薄膜が形成されているので、基板の
処理に伴う発熱は金属薄膜と、金属、炭素等の粉
末又は繊維が混入されたクツシヨン部材とを介し
て冷却された基板ホルダに伝えられ、基板が良好
に冷却される。(Function) The substrate is held in a substrate holder via a cushion member, and is subjected to treatments such as ion implantation in a vacuum chamber. The cushion member is made of powder or fibers mixed with the substrate, and a thin metal film with good thermal conductivity is formed on the surface of the cushion member that comes into contact with the substrate. The heat is transmitted to the cooled substrate holder via the thin film and the cushion member mixed with powder or fibers of metal, carbon, etc., and the substrate is cooled well.
(実施例)
本発明の実施例を図面につき説明するに、第1
図に於いて、1は真空室2内に配置される基板ホ
ルダを示し、該基板ホルダ1は例えばCu、Al等
の金属で形成され、その内部には冷却水の循環路
3が設けられる。(Example) To explain the example of the present invention with reference to the drawings, the first example is as follows.
In the figure, reference numeral 1 denotes a substrate holder disposed within a vacuum chamber 2. The substrate holder 1 is made of metal such as Cu or Al, and a cooling water circulation path 3 is provided inside thereof.
4は該ホルダ1の表面即ち冷却面に設けたクツ
シヨン部材で、シリコンウエハ等の基板5に当接
する表面には、金属薄膜6が形成される。 Reference numeral 4 denotes a cushion member provided on the surface, that is, the cooling surface, of the holder 1, and a thin metal film 6 is formed on the surface that comes into contact with a substrate 5 such as a silicon wafer.
該基板5は該金属薄膜6が形成されたクツシヨ
ン部材4上に載置され、プツシヤ7に押し付けら
れて、該基板ホルダ1に保持される。 The substrate 5 is placed on the cushion member 4 on which the metal thin film 6 is formed, is pressed against the pusher 7, and is held by the substrate holder 1.
該クツシヨン部材4は、シリコンゴム等のエラ
ストマ8に第1図及び第2図示のようにAl等の
金属、炭素等の粉末9又は第3図示のように繊維
9を混入したもので構成される。この場合、繊維
9としては長繊維でも短繊維でも良く、また第3
図示のようにふとん綿状にからみあわせた繊維と
し、繊維自体にも弾性を保有させるようにしても
良い。尚、該粉末9又は繊維9の混入割合は、重
量比にして5乃至95%とし、クツシヨン部材4の
シヨア硬度が20乃至80程度で、熱伝導率がエラス
トマ8のみの熱伝導率の2乃至10倍程度となるよ
うにするのが好ましい。 The cushion member 4 is composed of an elastomer 8 such as silicone rubber mixed with a powder 9 of metal such as Al, carbon, etc. as shown in FIGS. 1 and 2, or fibers 9 as shown in the third diagram. . In this case, the fibers 9 may be long fibers or short fibers, and the fibers 9 may be long fibers or short fibers.
As shown in the figure, the fibers may be intertwined in a fluffy manner, and the fibers themselves may also have elasticity. The mixing ratio of the powder 9 or the fibers 9 is 5 to 95% by weight, the shore hardness of the cushion member 4 is about 20 to 80, and the thermal conductivity is 2 to 2 of that of the elastomer 8 alone. It is preferable to make it about 10 times as large.
該金属薄膜6は、Alの単層膜、Cr或いはTiの
膜上にCu、Ag等の膜を施した2層膜、さらには
該2層膜上にNi等の膜を施した3層膜、等の熱
伝導性の良い金属膜で構成することが可能であ
り、これらの膜は真空蒸着、スパツタリング、イ
オンプレーテイング等の物理的薄膜形成手段やメ
ツキ等の化学的薄膜形成手段により、例えば1乃
至100ミクロンの厚さに形成される。この金属薄
膜6は基板5からクツシヨン部材4に熱を良好に
伝達し、前記繊維9がエラストマ8から突出する
のを防ぎ、またエラストマ8からの放出ガスの量
を低減される作用を営む。尚、金属薄膜6は必要
に応じて上記3層膜上に有機物の膜を施した4層
膜で構成しても良い。 The metal thin film 6 may be a single-layer film of Al, a two-layer film in which a film of Cu, Ag, etc. is formed on a film of Cr or Ti, or a three-layer film in which a film of Ni, etc. is formed on the two-layer film. , etc. These films can be formed by physical thin film forming means such as vacuum evaporation, sputtering, ion plating, etc., or chemical thin film forming means such as plating, for example. Formed to a thickness of 1 to 100 microns. The metal thin film 6 effectively transfers heat from the substrate 5 to the cushion member 4, prevents the fibers 9 from protruding from the elastomer 8, and also functions to reduce the amount of gas released from the elastomer 8. Incidentally, the metal thin film 6 may be constituted by a four-layer film in which an organic film is applied on the three-layer film as necessary.
該基板5のイオン注入処理に伴う発熱は、熱良
導体の金属薄膜6と熱良導体のクツシヨン部材4
を介して冷却された基板ホルダ1に順調に伝わる
ので、基板5の温度上昇を確実に防ぐことが出
来、金属薄膜6は柔軟性を備え、クツシヨン部材
4は基板5の変形に適応出来る程度の弾力性を具
備するので、基板5との密接性が向上すると共に
これに伴い冷却性が向上する。 The heat generated during the ion implantation process of the substrate 5 is caused by the metal thin film 6 which is a good thermal conductor and the cushion member 4 which is a good thermal conductor.
Since the temperature of the substrate 5 is smoothly transmitted to the cooled substrate holder 1 through Since it has elasticity, the closeness with the substrate 5 is improved and the cooling performance is accordingly improved.
(発明の効果)
このように本発明によるときは、基板を熱良導
性の金属薄膜を形成したクツシヨン部材を介して
基板ホルダで保持するようにしたので、基板の変
形に応じて金属薄膜とクツシヨン部材とが変形
し、これらと基板とを常時当接させ得て、冷却性
が向上すると共にその弾力性も良好である等の効
果がある。(Effects of the Invention) According to the present invention, the substrate is held by the substrate holder via the cushion member formed with a thin metal film with good thermal conductivity, so that the metal thin film can be changed according to the deformation of the substrate. The cushion member is deformed and the substrate can be brought into constant contact with the cushion member, resulting in improved cooling performance and good elasticity.
第1図は本発明の実施例の截断側面図、第2図
はその要部の拡大図、第3図は本発明の他の実施
例の要部の拡大図である。
1……基板ホルダ、2……真空室、4……クツ
シヨン部材、5……基板、6……金属薄膜、8…
…エラストマ、9……金属、炭素等の粉末又は繊
維。
FIG. 1 is a cutaway side view of an embodiment of the present invention, FIG. 2 is an enlarged view of the main part thereof, and FIG. 3 is an enlarged view of the main part of another embodiment of the invention. DESCRIPTION OF SYMBOLS 1...Substrate holder, 2...Vacuum chamber, 4...Cushion member, 5...Substrate, 6...Metal thin film, 8...
...Elastomer, 9...Powder or fiber of metal, carbon, etc.
Claims (1)
を介して冷却水の循環等により冷却された基板ホ
ルダで保持するようにしたものに於いて、該クツ
シヨン部材を、エラストマに金属、炭素等の粉末
又は繊維を混入したもので構成すると共に、該基
板に当接する該クツシヨン部材の表面に、金属薄
膜を形成したことを特徴とする基板の冷却装置。1. In a device in which a substrate to be processed in a vacuum chamber is held in a substrate holder cooled by circulation of cooling water through a cushion member, the cushion member is coated with an elastomer containing powder of metal, carbon, etc. 1. A cooling device for a substrate, characterized in that the cushion member is made of a material mixed with fibers, and a metal thin film is formed on the surface of the cushion member that comes into contact with the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59225942A JPS61104648A (en) | 1984-10-29 | 1984-10-29 | Substrate cooling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59225942A JPS61104648A (en) | 1984-10-29 | 1984-10-29 | Substrate cooling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61104648A JPS61104648A (en) | 1986-05-22 |
| JPH0228248B2 true JPH0228248B2 (en) | 1990-06-22 |
Family
ID=16837308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59225942A Granted JPS61104648A (en) | 1984-10-29 | 1984-10-29 | Substrate cooling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61104648A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4817556A (en) * | 1987-05-04 | 1989-04-04 | Varian Associates, Inc. | Apparatus for retaining wafers |
| US5132873A (en) * | 1988-09-30 | 1992-07-21 | Microelectronics And Computer Technology Corporation | Diaphragm sealing apparatus |
| US7384270B2 (en) | 2000-10-18 | 2008-06-10 | Fujikura Ltd. | Electrical connector |
| DE102007037792A1 (en) * | 2007-08-10 | 2009-02-12 | Oerlikon Leybold Vacuum Gmbh | Pump bearing assembly |
-
1984
- 1984-10-29 JP JP59225942A patent/JPS61104648A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61104648A (en) | 1986-05-22 |
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