JPH022839B2 - - Google Patents
Info
- Publication number
- JPH022839B2 JPH022839B2 JP59166842A JP16684284A JPH022839B2 JP H022839 B2 JPH022839 B2 JP H022839B2 JP 59166842 A JP59166842 A JP 59166842A JP 16684284 A JP16684284 A JP 16684284A JP H022839 B2 JPH022839 B2 JP H022839B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- silicon single
- crucible
- single crystal
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコン単結晶の引上装置の炭素ルツ
ボに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a carbon crucible for a silicon single crystal pulling device.
従来シリコン単結晶は主にチヨコラルスキー法
（CZ法）によつて製造されている。この方法は石
英ルツボ内にシリコン多結晶原料を入れ、周囲か
ら加熱して該シリコン多結晶を溶融させ、その溶
融物を種結晶により上方に引上げ、シリコン単結
晶をつくるものである。
Conventionally, silicon single crystals have been mainly produced by the Czyochoralski method (CZ method). In this method, a polycrystalline silicon raw material is placed in a quartz crucible, heated from the surroundings to melt the polycrystalline silicon, and the melt is pulled upward by a seed crystal to produce a silicon single crystal.
例えば第１図に示すように、チヤンバー１内に
炭素ヒータ２を設置するとともに、その内側には
炭素ルツボ３と石英ルツボ４があり、石英ルツボ
４の中にシリコン多結晶を入れて溶融し、その溶
融物５を種結晶により上方に引上げ、シリコン単
結晶６をつくつているものである。 For example, as shown in FIG. 1, a carbon heater 2 is installed in a chamber 1, and a carbon crucible 3 and a quartz crucible 4 are placed inside the chamber 1. Polycrystalline silicon is placed in the quartz crucible 4 and melted. The melt 5 is pulled upward by a seed crystal to form a silicon single crystal 6.
この際シリコン単結晶に不純物が含まれるのを
防止するためにチヤンバー１内にアルゴン等の不
活性ガスを上方より供給し、下方より引出す方法
がとられている。 At this time, in order to prevent impurities from being contained in the silicon single crystal, a method is used in which an inert gas such as argon is supplied into the chamber 1 from above and drawn out from below.
このようにチヤンバー１内にアルゴン等の不活
性ガスを導入することによりシリコン単結晶をつ
くつていた。 In this way, a silicon single crystal was produced by introducing an inert gas such as argon into the chamber 1.
また、公知の方法として炭素ルツボのシリコン
溶融面以上の部分において、その周辺にそつて複
数個の貫通孔を設けて引上速度を増大させて生産
量を増加させ、かつ引上装置の消費電力を減少さ
せるものが知られているが、このものはシリコン
溶融面以上の部分に孔を穿孔したもので、シリコ
ン単結晶の冷却効果を目的とするものである。 In addition, as a known method, multiple through holes are provided around the silicon melting surface of the carbon crucible to increase the pulling speed and production volume, and the power consumption of the pulling device is increased. There is a known method that reduces the amount of silicon, but this method has holes drilled above the silicon melting surface and is intended to have a cooling effect on the silicon single crystal.
本発明はシリコン単結晶の冷却効果を目的とす
るものでなく、石英ルツボのサセプターとして使
用している炭素ルツボの炭素が、石英ルツボの
SiO2のO2と化学反応を起して一部がCOガスとな
つて、シリコン融液中に混入してシリコン単結晶
中に炭素が数ppm含まれるという欠陥を防止する
ものである。
The purpose of the present invention is not to cool silicon single crystals, but rather the carbon in the carbon crucible used as a susceptor for the quartz crucible is
This prevents the defect that occurs when SiO 2 undergoes a chemical reaction with O 2 and some of it becomes CO gas, which mixes into the silicon melt and causes several ppm of carbon to be included in the silicon single crystal.
本発明を図面について説明する。 The invention will be explained with reference to the drawings.
第２図において２は炭素ヒータであり、その内
側に炭素ルツボ３と石英ルツボ４があるは従来の
ものと同じ、炭素ルツボ３のＣと石英ルツボ４の
SiO2とが化学反応即ち、SiO2のO2が遊離して
2C＋SiO2＝Si＋2CO
となり、このCOガスがシリコン融液に混入し、
シリコン単結晶中に炭素が数ppm含まれる。この
炭素がシリコン単結晶の欠陥を発生するものであ
る。 In Fig. 2, 2 is a carbon heater, and inside it there is a carbon crucible 3 and a quartz crucible 4, which are the same as the conventional ones.
A chemical reaction occurs between SiO 2 and O 2 of SiO 2 is liberated to form 2C + SiO 2 = Si + 2CO, and this CO gas mixes into the silicon melt.
Silicon single crystal contains several ppm of carbon. This carbon is what causes defects in silicon single crystals.
そこで、上方から下方部にアルゴンのような不
活性ガスが流れているので、この不活性ガスを利
用して排出する方法を考えたもので、ヒーター２
の側壁を流れるアルゴン等の不活性ガス流に炭素
と石英間で反応するCOガスをのせて強制的に炉
外へ排出するために、炭素ルツボ３に小孔７を穿
孔し、該小孔７は炭素ルツボ３の内側から外側に
向けて稍下向きのテーパをつける。 Therefore, since an inert gas such as argon flows from the upper part to the lower part, we devised a method to utilize this inert gas to discharge the heater 2.
A small hole 7 is bored in the carbon crucible 3 in order to forcibly discharge CO gas reacting between carbon and quartz onto the flow of inert gas such as argon flowing through the side wall of the carbon crucible 3. tapers slightly downward from the inside of the carbon crucible 3 to the outside.
また、該小孔７は炭素ルツボの下方部の周壁に
複数個設けるのがよい。 Further, it is preferable that a plurality of small holes 7 are provided in the peripheral wall of the lower part of the carbon crucible.
本発明は複数個の小孔を炭素ルツボの下方部に
設けたことにより、石英ルツボ４と炭素ルツボ３
との間を流れるアルゴン流によりCOガスをチヤ
ンバー１外に排出するもので、シリコン融液中に
炭素を混入しない。
The present invention provides a quartz crucible 4 and a carbon crucible 3 by providing a plurality of small holes in the lower part of the carbon crucible.
The CO gas is discharged outside the chamber 1 by the argon flow flowing between the chamber 1 and the silicon melt, so that carbon is not mixed into the silicon melt.
また本発明の小孔は、炭素ルツボ３の側壁の内
側から外側に下向きのテーパをつけてあり、アル
ゴン流の流れをスムースにしてあるので効果的に
排出できるものである。 Further, the small holes of the present invention are tapered downward from the inside to the outside of the side wall of the carbon crucible 3, and the argon flow is made smooth, so that the argon can be discharged effectively.
第１図は従来のシリコン単結晶の引上装置の断
面図、第２図は本発明の要部の断面図である。
２…炭素ヒーター、３…炭素ルツボ、４…石英
ルツボ、７…小孔。
FIG. 1 is a sectional view of a conventional silicon single crystal pulling apparatus, and FIG. 2 is a sectional view of the main parts of the present invention. 2... Carbon heater, 3... Carbon crucible, 4... Quartz crucible, 7... Small hole.
Claims (1)
上方から下方に流すシリコン単結晶引上装置の炭
素ルツボの下方部に複数個の小孔を穿孔し、該小
孔を内側から外側に下向きにテーパーをつけたこ
とを特徴とするシリコン単結晶引上装置の炭素ル
ツボ。1. A plurality of small holes are drilled in the lower part of the carbon crucible of a silicon single crystal pulling device in which an inert gas such as argon is flowed downward from the top inside the chamber, and the small holes are tapered downward from the inside to the outside. A carbon crucible for silicon single crystal pulling equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16684284A JPS6144791A (en) | 1984-08-09 | 1984-08-09 | Carbon crucible for silicon single crystal pulling up apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16684284A JPS6144791A (en) | 1984-08-09 | 1984-08-09 | Carbon crucible for silicon single crystal pulling up apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144791A JPS6144791A (en) | 1986-03-04 |
| JPH022839B2 true JPH022839B2 (en) | 1990-01-19 |
Family
ID=15838658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16684284A Granted JPS6144791A (en) | 1984-08-09 | 1984-08-09 | Carbon crucible for silicon single crystal pulling up apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144791A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4962414B2 (en) * | 2008-05-28 | 2012-06-27 | 富士電機株式会社 | Power electronics |
| JP4918130B2 (en) | 2009-12-11 | 2012-04-18 | シルトロニック・ジャパン株式会社 | Graphite crucible and silicon single crystal manufacturing equipment |
| CN102206855A (en) * | 2010-03-29 | 2011-10-05 | 上海杰姆斯电子材料有限公司 | Czochralski crystal grower graphite crucible |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58140392A (en) * | 1982-02-16 | 1983-08-20 | Komatsu Denshi Kinzoku Kk | Method and device for pulling-up of single crystal of silicon |
-
1984
- 1984-08-09 JP JP16684284A patent/JPS6144791A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6144791A (en) | 1986-03-04 |
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