JPH0228892B2 - - Google Patents
Info
- Publication number
- JPH0228892B2 JPH0228892B2 JP58129211A JP12921183A JPH0228892B2 JP H0228892 B2 JPH0228892 B2 JP H0228892B2 JP 58129211 A JP58129211 A JP 58129211A JP 12921183 A JP12921183 A JP 12921183A JP H0228892 B2 JPH0228892 B2 JP H0228892B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- boron
- boron film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
Landscapes
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は各種基体の保護膜あるいは半導体のド
ーピング拡散源の被膜としてのほう素膜の形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a method for forming a boron film as a protective film for various substrates or as a coating for a doping diffusion source of a semiconductor.
ほう素膜は耐酸、耐アルカリ性が強く、硬度が
高くしかも比重が小さく、金属などからなる基体
の表面の耐食性、耐摩耗性向上のための被覆とし
て基体の質量を大きく変化させることなく設ける
ことができるので振動用部品の表面保護膜として
利用できる。また半導体表面のパツシベーシヨン
膜として形成されるSiO2、Si3N4などの膜を後工
程における化学処理する際の耐薬品性保護膜とし
ても利用できる。さらにはまた、半導体素体中へ
Ｐ形領域を拡散によつて形成する際、その拡散源
として半導体素体表面上に設けられることもあ
る。本出願人はこれらの目的のためのほう素膜を
ジボランガスを用いた低温プラズマCVD法によ
つて形成する方法について既に出頭している。こ
れはジボランガスを二つの電極間への電圧印加に
より発生するプラズマ中で分解し、陰極側に載置
した基体表面にほう素膜を形成するものである。
しかしジボランガスは毒性が強く危険なガスであ
るため、その取扱いに注意を要し、ガス回路系に
おいて排出ガス対策を施す必要がある。ジボラン
に対する排ガス処理設備は現在の段階では決して
安価なものではなく、そのための設備費がかなり
大きなものとなる。
Boron film has strong acid and alkali resistance, high hardness, and low specific gravity, and can be applied as a coating to improve the corrosion and abrasion resistance of the surface of a metal substrate without significantly changing the mass of the substrate. Therefore, it can be used as a surface protection film for vibration parts. It can also be used as a chemical-resistant protective film when a film such as SiO 2 or Si 3 N 4 formed as a passivation film on the semiconductor surface is chemically treated in a subsequent process. Furthermore, when a P-type region is formed into a semiconductor body by diffusion, it may be provided on the surface of the semiconductor body as a diffusion source. The applicant has already submitted a method for forming a boron film for these purposes by low-temperature plasma CVD using diborane gas. In this method, diborane gas is decomposed in plasma generated by applying a voltage between two electrodes, and a boron film is formed on the surface of a substrate placed on the cathode side.
However, since diborane gas is a highly toxic and dangerous gas, it must be handled with care and exhaust gas countermeasures must be taken in the gas circuit system. Exhaust gas treatment equipment for diborane is by no means inexpensive at the current stage, and the cost of the equipment is quite large.
本発明は上記の欠点を除去し、ジボランガスを
原料とするが排ガス処理設備をできるだけ小規模
にとどめることのできるほう素膜の形成方法を提
供することを目的とする。
An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a method for forming a boron film using diborane gas as a raw material, which can keep the exhaust gas treatment equipment as small as possible.
本発明は、上述の目的を達成するため、水素に
より希釈したジボランガスを低温プラズマCVD
法により分解して基板上にほう素膜を形成する第
１工程と、該工程によりほう素膜が形成された基
板をターゲツトとしてスパツタリング法により不
活性ガス中で所望の基体上にほう素膜を形成する
第２工程とを備えることを特徴としている。
In order to achieve the above-mentioned object, the present invention uses diborane gas diluted with hydrogen by low-temperature plasma CVD.
The first step is to form a boron film on the substrate by decomposing the boron film using a sputtering method in an inert gas, using the substrate on which the boron film has been formed in this step as a target. It is characterized by comprising a second step of forming.
第１図は本発明の実施例に用いたターゲツト作
成のためのプラズマCVD装置である。真空反応
槽１内に上部電極２および下部電極３かに対向し
て配置されている。排気管４の排気量調整バルブ
５を全開にして排気系６によつて反応槽１内の真
空度をおよそ１×10-7Torrに保つ。下部電極３
を電源７に接続されたヒータ８によつて300℃保
つ。ステンレス鋼基板９はこの下部電極３の上に
載置されている。次いでガス流量調整バルブ１０
および減圧弁１１を適度に開いて、ボンベ１２か
ら水素によつて1000PPMに希釈したジボランを
反応槽１内に流入させる。真空計１３で観測しな
がら排気量調整バルブ４を適度に閉じて反応槽１
内の圧力を2.0Torrに保つ。この状態で直流安定
化電源１４を用いて電極２を陽極に、電極３を陰
極して400Vの電圧を印加し、グロー放電を発生
させる。このままグロー放電を60分間継続させ、
ジボランを分解して基板９の表面にほう素膜を形
成させる。この条件で生じたほう素膜はおよそ
500Åの膜厚になる。ここまでの手順は本出願人
よりの既出願に記載されている。このほう素膜が
表面に形成されたステンレス鋼基板９をターゲツ
トとしてスパツタリングを行う。スパツタリング
装置は第１図のプラズマCVD装置をほとんどそ
のまま使用可能なため第２図には、スパツタリン
グ法を行う要部のみを記す、ただし、電源１４の
正負は逆に接続してある。前述したように、ステ
ンレス鋼基板９の表面にほう素膜を形成したター
ゲツト１９を、スパツタリング法においては上部
陰極電極２に取り付け、ほう素膜を形成すべき基
体２０を下部陽極電極３の上に載置する。下部電
極３はヒータ８によつて300℃に加熱されている。
この状態で、まず排気量調整バルブ５を全開にし
て、排気系６により、反応槽１内を、およそ１×
10-7Torrほどの真空度にする。その後、ガス流
量調整器１０と減圧弁２２を開け２１のアルゴン
ガスボンベより、反応槽１内にアルゴンを流入さ
せる。真空計１３によつて反応槽１内の圧力を観
測しながら、排気量調整バルブ５を適度に調整
し、反応槽内１の圧力を0.1〜0.3Torrに設定す
る。その後、直流安定化電源１４によつて両電極
２，３間に600〜800Vの電圧を印加しグロー放電
を生じさせ、スパツタリング法により基体２０の
表面にほう素膜を形成させる。基体２０に例えば
シリコンウエーハを用いた場合にはほう素はシリ
コン内に侵入し、ｐ層あるいはp+層が形成され
る。この方法で特に極薄のドーピング層を形成す
ることができる。基体２０に金属板、絶縁板を用
いた場合は耐摩耗性、耐薬品性のすぐれた被膜が
形成される。またSiO2、Si3N4などの保護膜を形
成した半導体素体を用いた場合は、半導体素体の
導電型、導電率を変化させることなく化学的、機
械的保護膜を付加することができる。
FIG. 1 shows a plasma CVD apparatus for creating a target used in an embodiment of the present invention. An upper electrode 2 and a lower electrode 3 are disposed in a vacuum reaction tank 1 to face each other. The exhaust volume adjustment valve 5 of the exhaust pipe 4 is fully opened, and the vacuum level in the reaction tank 1 is maintained at approximately 1×10 -7 Torr by the exhaust system 6. Lower electrode 3
is maintained at 300°C by a heater 8 connected to a power supply 7. A stainless steel substrate 9 is placed on this lower electrode 3. Next, the gas flow rate adjustment valve 10
Then, the pressure reducing valve 11 is opened appropriately to allow diborane diluted to 1000 PPM with hydrogen to flow into the reaction tank 1 from the cylinder 12. While observing with the vacuum gauge 13, close the displacement adjustment valve 4 appropriately and close the reaction tank 1.
Maintain internal pressure at 2.0Torr. In this state, a voltage of 400 V is applied using the DC stabilized power supply 14, with electrode 2 serving as an anode and electrode 3 serving as a cathode, to generate glow discharge. Continue the glow discharge for 60 minutes,
Diborane is decomposed to form a boron film on the surface of the substrate 9. The boron film produced under these conditions is approximately
The film thickness is 500 Å. The steps up to this point are described in the existing application filed by the present applicant. Sputtering is performed using the stainless steel substrate 9 on which the boron film is formed as a target. As the sputtering apparatus, the plasma CVD apparatus shown in FIG. 1 can be used almost as is, so only the main parts for performing the sputtering method are shown in FIG. As mentioned above, in the sputtering method, the target 19 on which the boron film is formed on the surface of the stainless steel substrate 9 is attached to the upper cathode electrode 2, and the substrate 20 on which the boron film is to be formed is placed on the lower anode electrode 3. Place it. The lower electrode 3 is heated to 300° C. by a heater 8.
In this state, first, the exhaust volume adjustment valve 5 is fully opened, and the inside of the reaction tank 1 is pumped approximately 1× by the exhaust system 6.
Create a vacuum of about 10 -7 Torr. Thereafter, the gas flow regulator 10 and the pressure reducing valve 22 are opened to allow argon to flow into the reaction tank 1 from the argon gas cylinder 21. While observing the pressure inside the reaction tank 1 with the vacuum gauge 13, the displacement adjustment valve 5 is appropriately adjusted to set the pressure inside the reaction tank 1 to 0.1 to 0.3 Torr. Thereafter, a voltage of 600 to 800 V is applied between the electrodes 2 and 3 by the DC stabilized power supply 14 to generate a glow discharge, and a boron film is formed on the surface of the substrate 20 by sputtering. When a silicon wafer, for example, is used as the base 20, boron penetrates into the silicon, forming a p layer or a p + layer. Particularly very thin doping layers can be formed in this way. When a metal plate or an insulating plate is used for the base 20, a coating with excellent wear resistance and chemical resistance is formed. Furthermore, when using a semiconductor element with a protective film formed of SiO 2 or Si 3 N 4 , it is possible to add a chemical or mechanical protective film without changing the conductivity type or conductivity of the semiconductor element. can.
上記実施例ではアルゴンを用いてスパツタリン
グを行つた。これはグロー放電中で生じたAr+を
電界により加速して陰極側に取り付けたターゲツ
ト１９のほう素層に衝突させ、運動量を交換して
ターゲツトからほう素原子あるいはほう素分子を
飛び出させて基体２０の表面にほう素を付着させ
るもので、安全に基体表面に他からの不純物の混
入あるいは結合のない純度の高いほう素膜を均一
に形成できる。 In the above examples, sputtering was performed using argon. This is done by accelerating the Ar + generated during the glow discharge by an electric field and colliding with the boron layer of the target 19 attached to the cathode side, exchanging momentum and ejecting boron atoms or molecules from the target to form a substrate. By attaching boron to the surface of the substrate 20, it is possible to safely and uniformly form a highly pure boron film on the surface of the substrate without contamination or bonding of impurities from other sources.
以上のような本発明によれば、水素により希釈
したジボランガスを低温プラズマCVD法により
分解して基板上にほう素膜を形成する第１工程
と、該工程によりほう素膜が形成された基板をタ
ーゲツトとしてスパツタリング法により不活性ガ
ス中で所望の基体上にほう素膜を形成する第２工
程とを備えるようにし、毒性の強いジボランガス
は第１工程にのみ用いるようにしたので、その排
ガス処理設備も第１工程にのみ設ければよく、第
１工程で一括して作製したターゲツトを用いて第
２工程を行うことにより、大幅な設備費の低減が
可能となる。
According to the present invention as described above, the first step is to form a boron film on a substrate by decomposing diborane gas diluted with hydrogen by low-temperature plasma CVD method, and the substrate on which the boron film is formed by this step is The second step is to form a boron film on the desired substrate in an inert gas using the sputtering method as a target, and the highly toxic diborane gas is used only in the first step, so the exhaust gas treatment equipment is need only be provided in the first step, and by performing the second step using the targets produced all at once in the first step, it is possible to significantly reduce equipment costs.
さらに、第１工程では水素により希釈したジボ
ランガスを用いることにより、300℃程度の低温
でのほう素膜の形成を可能としたので、不純物と
の結合の少ないほう素膜を有するターゲツトを作
製できる。従つて、このターゲツトを用いた第２
工程により、所望の基体上に不純物のないほう素
膜を形成することができる。 Furthermore, by using diborane gas diluted with hydrogen in the first step, it is possible to form a boron film at a low temperature of about 300°C, making it possible to produce a target with a boron film that is less likely to bond with impurities. Therefore, the second
Through the process, an impurity-free boron film can be formed on a desired substrate.
このように第１工程および第２工程の結合によ
り、少ない設備費で良質のほう素膜を得ることが
できる。 By combining the first step and the second step in this way, a high quality boron film can be obtained with low equipment costs.
上記の実施例では、不活性ガスとしてアルゴン
を用いたが、他の不活性ガスを用いてもよい。ま
たターゲツト基板としてステンレス鋼板以外の材
料を用いることも可能である。 In the above embodiments, argon was used as the inert gas, but other inert gases may be used. It is also possible to use materials other than stainless steel plates as the target substrate.
第１図は本発明の一実施例のプラズマCVD法
装置、第２図は同じくスパツタリング装置の要部
をそれぞれ概念的に示す断面図である。
１……真空反応槽、２……上部電極、３……下
部電極、６……排気系、８……ヒータ、９……タ
ーゲツト基板、１２……ジボランガスボンベ、１
４……電源、１９……ほう素ターゲツト、２０…
…基体、２１……アルゴンボンベ。
FIG. 1 is a plasma CVD method apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view conceptually showing the main parts of the same sputtering apparatus. DESCRIPTION OF SYMBOLS 1...Vacuum reaction tank, 2...Upper electrode, 3...Lower electrode, 6...Exhaust system, 8...Heater, 9...Target substrate, 12...Diborane gas cylinder, 1
4...Power supply, 19...Boron target, 20...
...Substrate, 21...Argon cylinder.
Claims (1)
ズマCVD法により分解して基板上にほう素膜を
形成する第１工程と、該工程によりほう素膜が形
成された基板をターゲツトとしてスパツタリング
法により不活性ガス中で所望の基体上にほう素膜
を形成する第２工程とを備えることを特徴とする
ほう素膜形成方法。1. A first step in which diborane gas diluted with hydrogen is decomposed by low-temperature plasma CVD to form a boron film on the substrate, and the substrate on which the boron film has been formed in this step is decomposed in an inert gas by sputtering. and a second step of forming a boron film on a desired substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129211A JPS6021529A (en) | 1983-07-15 | 1983-07-15 | Formation of boron film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129211A JPS6021529A (en) | 1983-07-15 | 1983-07-15 | Formation of boron film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6021529A JPS6021529A (en) | 1985-02-02 |
| JPH0228892B2 true JPH0228892B2 (en) | 1990-06-27 |
Family
ID=15003877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58129211A Granted JPS6021529A (en) | 1983-07-15 | 1983-07-15 | Formation of boron film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6021529A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6358823A (en) * | 1986-08-29 | 1988-03-14 | Toshiba Corp | Manufacture of semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55125634A (en) * | 1979-03-23 | 1980-09-27 | Nissan Motor Co Ltd | Production of silicon dioxide film |
-
1983
- 1983-07-15 JP JP58129211A patent/JPS6021529A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6021529A (en) | 1985-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4362766A (en) | Method for preparing a protective amorphous silicon passivating film on a semiconductor device | |
| TW504772B (en) | Plasma deposition method and system | |
| US4292343A (en) | Method of manufacturing semiconductor bodies composed of amorphous silicon | |
| US10000850B2 (en) | Deposition method and method of manufacturing a catalyst wire for a catalytic chemical vapor deposition apparatus | |
| US6555257B1 (en) | Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance | |
| JPH11162880A (en) | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method | |
| JPH0143449B2 (en) | ||
| WO1994019509A1 (en) | Film forming method and film forming apparatus | |
| US5045346A (en) | Method of depositing fluorinated silicon nitride | |
| JP2004217977A (en) | Amorphous carbon nitride film and manufacturing method thereof | |
| JPS58209111A (en) | Plasma generator | |
| JP5792986B2 (en) | Surface treatment apparatus and surface treatment method | |
| JPH0228892B2 (en) | ||
| JP2009503845A (en) | Method for passivating a substrate surface | |
| JPH02115379A (en) | Device for forming thin film | |
| JPH079059B2 (en) | Method for producing carbon thin film | |
| JPH0250969A (en) | Thin film forming equipment | |
| JP2000178749A (en) | Plasma CVD equipment | |
| US4627991A (en) | Method for forming a protective film on a semiconductor body | |
| JP3276415B2 (en) | Method and apparatus for forming ceramic film | |
| JPS57153436A (en) | Semiconductor device | |
| JPS58174568A (en) | Formation of film of metal compound | |
| JPH02148843A (en) | Manufacture of semiconductor device | |
| JPH0247252A (en) | Production of composite material film | |
| JPH06310430A (en) | Equipment and method for manufacturing amorphous carbon hydride film |