JPH0228907B2 - - Google Patents
Info
- Publication number
- JPH0228907B2 JPH0228907B2 JP56197834A JP19783481A JPH0228907B2 JP H0228907 B2 JPH0228907 B2 JP H0228907B2 JP 56197834 A JP56197834 A JP 56197834A JP 19783481 A JP19783481 A JP 19783481A JP H0228907 B2 JPH0228907 B2 JP H0228907B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- photodiode
- type
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
Landscapes
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置に関し、特にフオトダイオ
ードの特性改善に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor devices, and particularly to improving the characteristics of photodiodes.
従来のフオトダイオードの応答速度は無バイア
スまたは低バイアスで使用するとき遅くなり問題
となつている。特に電子効率を上げるため動作層
を厚くしたとき、フオトダイオードの応答速度は
遅くなる欠点があつた。 The response speed of conventional photodiodes becomes slow when used with no bias or low bias, which poses a problem. In particular, when the active layer was made thicker to increase electronic efficiency, the response speed of the photodiode became slower.
本発明の目的は、量子効率が高く、且つ応答速
度の速いフオトダイオードを提供することであ
る。 An object of the present invention is to provide a photodiode with high quantum efficiency and fast response speed.
本発明によれば、一導電型半導体領域の表面領
域に形成した他の導電型の第１の領域と、この第
１の領域から一導電型の半導体領域に突出するよ
うに形成された他の導電型の第２の領域を有する
フオトダイオードを得る。 According to the present invention, a first region of another conductivity type formed in a surface region of a semiconductor region of one conductivity type, and a first region of another conductivity type formed so as to protrude from the first region into the semiconductor region of one conductivity type. A photodiode is obtained having a second region of conductivity type.
以下図面を用いて本発明をより詳細に説明す
る。 The present invention will be explained in more detail below using the drawings.
第１図は従来のフオトダイオードの１例を示す
断面図である。不純物濃度の高いn+型半導体領
域１の上に不純物濃度の低いn-型半導体領域２
があり、そのn-型半導体領域２にｐ型の不純物
を拡散等により導入してp+型半導体領域３が形
成されている。n-型半導体領域２は光が入射し
キヤリアを発生させる動作層である。フオトダイ
オードは一般にｐ型半導体領域側に負のバイアス
電圧を印加するかまたは無バイアスで使用され
る。このｎ型のフオトダイオードに無バイアスか
または低バイアスが印加されたとき、電界が存在
する空乏層４は動作層２の深さ方向には広がら
ず、空乏層４の広がつていない動作層５は無電界
となる。このフオトダイオードに光６が入射した
とき動作層２内にキヤリア７を発生する、発生し
たキヤリアのうち空乏層４で発生したキヤリア８
は電界により加速されて早く流れる。 FIG. 1 is a sectional view showing an example of a conventional photodiode. An n - type semiconductor region 2 with a low impurity concentration is formed on an n + type semiconductor region 1 with a high impurity concentration.
A p + -type semiconductor region 3 is formed by introducing p-type impurities into the n - -type semiconductor region 2 by diffusion or the like. The n - type semiconductor region 2 is an active layer on which light enters and generates carriers. A photodiode is generally used with a negative bias voltage applied to the p-type semiconductor region side or with no bias applied. When no bias or low bias is applied to this n-type photodiode, the depletion layer 4 in which an electric field exists does not spread in the depth direction of the active layer 2, and the active layer 4 in which the depletion layer 4 does not spread 5, there is no electric field. When light 6 is incident on this photodiode, carriers 7 are generated in the active layer 2. Among the generated carriers, carriers 8 generated in the depletion layer 4
is accelerated by the electric field and flows quickly.
しかし、空乏層４以外の動作層５で発生したキ
ヤリア９は拡散によつて流れるので走行速度は遅
くなる。このため無バイアスまたは低バイアスで
使用するフオトダイオードの応答速度は遅くな
る。 However, since the carriers 9 generated in the active layer 5 other than the depletion layer 4 flow by diffusion, the traveling speed becomes slow. For this reason, the response speed of photodiodes used with no bias or low bias becomes slow.
第２図は本発明によるフオトダイオードの一実
施例を示す断面図である。本実施例によるフオト
ダイオードでは、N+型半導体領域１１上のn-型
の動作層１２の表面にＰ型領域１３が形成されて
おり、更にこのＰ型領域１３が部分的に動作層１
２の表面に垂直またはそれに近い方向で動作層１
２の内部に深く形成されている。このフオトダイ
オードではｐ−ｎ接合２０が動作層１２の内部に
もあり、かつ図示されているようにその深さが隣
り合う間隔よりも大となつているので無バイアス
または低バイアスでも動作層１２のほとんど全体
に空乏層１４が広がる。このため１６が入射し動
作層内で発生したキヤリア１７ほとんど全て空乏
層１４内の電界によつて流れるので応答速度に早
くなる。 FIG. 2 is a sectional view showing one embodiment of a photodiode according to the present invention. In the photodiode according to this embodiment, a P type region 13 is formed on the surface of the n - type active layer 12 on the N + type semiconductor region 11, and furthermore, this P type region 13 is partially connected to the active layer 1.
Layer 1 operates in a direction perpendicular to or close to the surface of layer 2.
It is formed deep inside 2. In this photodiode, the p-n junction 20 is also inside the active layer 12, and as shown in the figure, its depth is greater than the interval between adjacent ones, so even with no bias or low bias, the active layer 12 The depletion layer 14 spreads over almost the entire area. Therefore, almost all of the carriers 17 generated in the active layer when 16 are incident are caused to flow by the electric field in the depletion layer 14, resulting in a faster response speed.
以上説明したように本発明によりｎ型フオトダ
イオードのｎ型動作層の表面だけでなくｎ型動作
層内部にもｐ層を形成し、ｐ−ｎ接合を動作層内
部にも存在させることにより、無バイアス、また
は低バイアスでも量子効率が高く、応答速度の早
いフオトダイオードが得られる。 As explained above, according to the present invention, a p-layer is formed not only on the surface of the n-type active layer of an n-type photodiode but also inside the n-type active layer, and by making the p-n junction exist inside the active layer, A photodiode with high quantum efficiency and fast response speed can be obtained even with no bias or low bias.
以上ｎ型のフオトダイオードについて説明して
きたが領域１，２，３，１１，１２，１３の伝導
型が逆であるｐ型のフオトダイオードでも同様に
適用できるものである。 Although the above description has been made regarding an n-type photodiode, the present invention can be similarly applied to a p-type photodiode in which the conduction types of regions 1, 2, 3, 11, 12, and 13 are opposite to each other.
第１図は従来のフオトダイオードの１例の断面
図であり、第２図は本発明によるフオトダイオー
ドの一実施例の断面図である。
１，１１……n+型半導体領域、２，１２……
n-型半導体領域（動作層）、３，１３……p+型半
導体領域、４，１４……空乏層、５，１５……空
乏層以外の動作領域、６，１６……入射光、７，
１７……発生したキヤリア、８，１８……空乏層
で発生したキヤリア、９……空乏層以外の動作領
域で発生したキヤリア、１０，２０……ｐ−ｎ接
合。
FIG. 1 is a sectional view of an example of a conventional photodiode, and FIG. 2 is a sectional view of an embodiment of a photodiode according to the present invention. 1, 11... n + type semiconductor region, 2, 12...
n - type semiconductor region (active layer), 3, 13... p + type semiconductor region, 4, 14... depletion layer, 5, 15... operating region other than the depletion layer, 6, 16... incident light, 7 ，
17...Carriers generated, 8, 18...Carriers generated in the depletion layer, 9...Carriers generated in the operating region other than the depletion layer, 10, 20...pn junction.
Claims (1)
前記動作層のほとんど全体に空乏層が広がるよう
に前記動作層の内部にも複数の領域に深く形成
し、その深さが隣り合う間隔より大となるように
したことを特徴とするフオトダイオード。1 The p-n junction is located not only near the surface of the active layer, but also near the surface of the active layer.
A photodiode characterized in that a depletion layer is formed deeply in a plurality of regions inside the active layer so that the depletion layer spreads over almost the entirety of the active layer, and the depth thereof is larger than the interval between adjacent regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197834A JPS5898989A (en) | 1981-12-09 | 1981-12-09 | Photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56197834A JPS5898989A (en) | 1981-12-09 | 1981-12-09 | Photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898989A JPS5898989A (en) | 1983-06-13 |
| JPH0228907B2 true JPH0228907B2 (en) | 1990-06-27 |
Family
ID=16381114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56197834A Granted JPS5898989A (en) | 1981-12-09 | 1981-12-09 | Photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898989A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741168Y2 (en) * | 1988-09-13 | 1995-09-20 | 新日本無線株式会社 | Semiconductor light receiving element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931295A (en) * | 1972-07-21 | 1974-03-20 | ||
| JPS5080793A (en) * | 1973-11-14 | 1975-07-01 |
-
1981
- 1981-12-09 JP JP56197834A patent/JPS5898989A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5898989A (en) | 1983-06-13 |
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