JPH0229629B2 - - Google Patents
Info
- Publication number
- JPH0229629B2 JPH0229629B2 JP59110192A JP11019284A JPH0229629B2 JP H0229629 B2 JPH0229629 B2 JP H0229629B2 JP 59110192 A JP59110192 A JP 59110192A JP 11019284 A JP11019284 A JP 11019284A JP H0229629 B2 JPH0229629 B2 JP H0229629B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite
- boron nitride
- powder layer
- powder
- molded body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 40
- 229910002804 graphite Inorganic materials 0.000 claims description 35
- 239000010439 graphite Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 25
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000035939 shock Effects 0.000 description 7
- 238000005336 cracking Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 102000020897 Formins Human genes 0.000 description 2
- 108091022623 Formins Proteins 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Producing Shaped Articles From Materials (AREA)
- Manufacturing Of Tubular Articles Or Embedded Moulded Articles (AREA)
Description
【発明の詳細な説明】
本発明は、CVD法により製造される熱分解窒
化硼素(以下p−BNという)成形体の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a pyrolytic boron nitride (hereinafter referred to as p-BN) molded body produced by a CVD method.
p−BN成形体は、例えば米国特許第3152006
号公報などにより知られている如く、通常は、反
応ガスとしてBCl3とNH3とを使用しCVD法によ
り合成されるものであり、したがつて通常の焼結
法により製造される窒化硼素(BN)のように焼
結助剤を用いることなく気相から直接合成される
ために、高密度、高純度であるという特長を有し
ている。 The p-BN molded body is disclosed in, for example, US Pat. No. 3,152,006.
As is known from the above publication, boron nitride is usually synthesized by the CVD method using BCl 3 and NH 3 as reaction gases, and therefore boron nitride ( Unlike BN), it is synthesized directly from the gas phase without using a sintering aid, so it has the characteristics of high density and high purity.
そして、かかるp−BN成形体の特長を利用し
たものとして例えば、GaAsを代表とする−V
族化合物半導体単結晶引上げ用のるつぼとして用
いることなどが提案されている(特開昭51−
109912号公報および特開昭55−145169号公報など
参照)。 For example, as a material utilizing the features of such a p-BN molded product, -V
It has been proposed to use it as a crucible for pulling single crystals of group compound semiconductors (Japanese Patent Application Laid-Open No. 1989-1999).
(See Publication No. 109912 and Japanese Patent Application Laid-open No. 145169/1983, etc.).
すなわち、−V族化合物半導体単結晶を引上
げるに際しては、従来からSiO2るつぼが使用さ
れているが、SiO2るつぼの場合にはSiが不純物
として単結晶中に溶け込む恐れがあるので、
SiO2るつぼに代りp−BNるつぼを用いる試みが
なされたものである。 That is, when pulling -V group compound semiconductor single crystals, SiO 2 crucibles have traditionally been used, but in the case of SiO 2 crucibles, there is a risk that Si will dissolve into the single crystal as an impurity.
An attempt was made to use a p-BN crucible instead of the SiO 2 crucible.
本願発明者等は、上記p−BN成形体を実用す
るべく、一例としてp−BN単体のるつぼを作成
することを試みたところ、基体からp−BN成形
体を取りはずす過程において、改良すべき問題点
のあることを見出した。 In order to put the above-mentioned p-BN molded product into practical use, the inventors of the present application attempted to create a crucible made of p-BN alone as an example, and found that in the process of removing the p-BN molded product from the base, there were problems that should be improved. I found out that there is a point.
すなわち、本願発明者等は、p−BN単体のる
つぼを得るために所望の形状に成形した黒鉛基体
上にCVD法でp−BNを約1mmの厚さまで蒸着
し、蒸着後黒鉛基体を除去することを試みた。し
かし、蒸着温度が1600℃〜2000℃と高いため黒鉛
基体とp−BNとの界面の付着力が強くなり、黒
鉛基体からp−BNるつぼをはずす時にp−BN
るつぼが破損してしまうことが判つた。このた
め、黒鉛基体を大気中で600〜800℃に加熱して酸
化させCO2ガス化して除去する方法を取り、p−
BN成形体るつぼを得た。 That is, in order to obtain a crucible of p-BN alone, the present inventors deposited p-BN to a thickness of about 1 mm by CVD on a graphite substrate formed into a desired shape, and removed the graphite substrate after the vapor deposition. I tried that. However, since the vapor deposition temperature is as high as 1600°C to 2000°C, the adhesion force at the interface between the graphite substrate and p-BN becomes strong, and when the p-BN crucible is removed from the graphite substrate, the p-BN
It was discovered that the crucible was damaged. For this reason, we have adopted a method to remove p-
A BN molded crucible was obtained.
しかしながら、黒鉛基体を酸化・除去する方法
では、黒鉛の酸化速度が遅く、例えば15φ×20
の黒鉛基体を除去するのに10時間という長時間を
要してしまうという工業上重要な欠点がある。ま
た、この方法では高価な高密度黒鉛を使用しなけ
ればならないにもかかわらず、黒鉛基体の利用は
一度限りであるという問題点もあり、今後引上げ
る単結晶の大型化の傾向に対応して、100φ以上
の大型p−BNるつぼを製造していく上で大きな
欠点となつている。 However, in the method of oxidizing and removing the graphite substrate, the oxidation rate of graphite is slow, for example, 15φ×20
An industrially important drawback is that it takes a long time of 10 hours to remove the graphite substrate. In addition, although this method requires the use of expensive high-density graphite, there is also the problem that the graphite substrate can only be used once. This is a major drawback in manufacturing large p-BN crucibles of 100φ or more.
本発明は、上記技術の欠点を改良し、黒鉛基体
を損うことなく容易にp−BN成形体を黒鉛基体
から離型することのできる方法を提供することを
目的とする。 An object of the present invention is to improve the drawbacks of the above-mentioned techniques and to provide a method by which a p-BN molded body can be easily released from a graphite substrate without damaging the graphite substrate.
上記目的を達成するために本発明は、黒鉛から
な基体の表面に剥離用紛末層を説け、該粉末層上
にCVD法により熱分解窒化硼素を蒸着して成形
体を形成した後、前記粉末層を剥離部として黒鉛
基体から前記成形体を離型することを特徴とする
ものである。 In order to achieve the above object, the present invention provides a powder layer for peeling on the surface of a substrate made of graphite, and forms a molded body by depositing pyrolytic boron nitride on the powder layer by CVD method. This method is characterized in that the molded body is released from the graphite substrate using the powder layer as a peeling part.
本発明において、上記粉末層は1600〜2000℃の
温度で焼結することなく、かつp−BN中に不純
物として混入しないことが必要である。このた
め、窒化硼素粉末または黒鉛粉末から成形される
ことが望ましい。本発明において、上記粉末層は
例えば、窒化硼素粉末をアルコール等の溶媒中に
溶かし、黒鉛表面上に均一に塗布した後、加熱し
て溶媒を除去することなどの手法により容易に形
成できる。また、本発明において、黒鉛基体の表
面を保護する目的で、まず黒鉛基体にp−BN膜
を蒸着した後に、BN粉末層や黒鉛粉末層を塗布
する方法も有効である。 In the present invention, it is necessary that the powder layer is not sintered at a temperature of 1600 to 2000°C and not mixed into p-BN as an impurity. For this reason, it is desirable to mold from boron nitride powder or graphite powder. In the present invention, the powder layer can be easily formed by, for example, dissolving boron nitride powder in a solvent such as alcohol, uniformly coating it on the graphite surface, and then heating to remove the solvent. Further, in the present invention, for the purpose of protecting the surface of the graphite substrate, it is also effective to first deposit a p-BN film on the graphite substrate and then apply a BN powder layer or a graphite powder layer.
上記構成の本発明によれば、例えば、第1図に
示すように所望の形状に加工した黒鉛基体1上に
BN粉末からなる剥離粉末層2を約10〜30μm塗
布し、その後CVD炉内で所定温度で約10分間H2
ガス等の雰囲気中で熱処理し、引続いてCVD法
によりp−BN成形体3が約1mmの厚さまで蒸着
生成される。BN粉末は難焼結性であるため1600
〜2000℃では焼結せず、このため黒鉛基体の大き
さにかかわらず、生成されたp−BN成形体3は
BN粉末層2の部分から黒鉛基体1と容易に離型
できる。しかも、本発明によれば黒鉛基体の損傷
は極めて少ないため繰返し使用することができ
る。また、本発明においては、p−BNと黒鉛と
の熱膨張係数の差に起因する急冷時の熱応力を粉
末層2のところで吸引できるので、p−BN中に
残留応力が残らないため耐熱衝撃性に優れたp−
BN成形体を製造することが可能である。 According to the present invention having the above configuration, for example, as shown in FIG.
A peeling powder layer 2 made of BN powder is applied to a thickness of about 10 to 30 μm, and then heated in a CVD furnace at a predetermined temperature for about 10 minutes with H 2
Heat treatment is performed in an atmosphere of gas or the like, and then a p-BN molded body 3 is deposited to a thickness of about 1 mm by CVD. 1600 because BN powder is difficult to sinter.
It does not sinter at ~2000℃, so regardless of the size of the graphite substrate, the produced p-BN compact 3
The graphite base 1 can be easily separated from the BN powder layer 2. Moreover, according to the present invention, damage to the graphite substrate is extremely small, so that it can be used repeatedly. In addition, in the present invention, the thermal stress caused by the difference in thermal expansion coefficient between p-BN and graphite during quenching can be absorbed at the powder layer 2, so no residual stress remains in the p-BN, making it resistant to thermal shock. Excellent p-
It is possible to produce BN molded bodies.
以下、実施例にしたがつて本発明を詳述する。 The present invention will be described in detail below with reference to Examples.
実施例 1
50φ×50のるつぼ形状の黒鉛基体上に市販の
BN粉末を均一に塗布し、CVD炉内で1800℃で10
分間H2気流中で熱処理し、その後引続いてCVD
法によりp−BNを厚さ1mm蒸着した。Example 1 Commercially available
BN powder was applied uniformly and heated at 1800℃ for 10 minutes in a CVD furnace.
Heat treatment in H2 stream for min followed by CVD
p-BN was deposited to a thickness of 1 mm using the method.
CVD条件は、BCl3流量:200SCCM、NH3流
量:1000SCCM、H2流量:1000SCCM、反応温
度:1800℃、反応圧力:10Torrであつた。 The CVD conditions were: BCl 3 flow rate: 200 SCCM, NH 3 flow rate: 1000 SCCM, H 2 flow rate: 1000 SCCM, reaction temperature: 1800°C, and reaction pressure: 10 Torr.
冷却後炉内より試料を取出し、黒鉛基体の離型
を試みたところ、約10分でほとんど損傷せずに離
型できたので、この黒鉛基体を繰返し使用し、試
料を5ケ作成した。また、得られた試料を600℃
から水中に投下するという耐熱衝撃試験を行つた
ところ、平均15回まで割れが生じなかつた。尚、
比較のために粉末層を設けることなく黒鉛を酸化
除去する方法で同一形状のp−BNるつぼを形成
したところ、離型に費された時間は約600分であ
り、また、得られた試料を同様に耐熱衝撃試験し
たところ7回で割れが発生した。 After cooling, the sample was taken out of the furnace and an attempt was made to release the graphite substrate from the mold. Since the graphite substrate could be released from the mold in about 10 minutes with almost no damage, this graphite substrate was used repeatedly and five samples were made. In addition, the obtained sample was heated to 600℃.
When we conducted a thermal shock test by dropping the product into water, no cracking occurred until an average of 15 times. still,
For comparison, when a p-BN crucible of the same shape was formed by a method of oxidizing and removing graphite without providing a powder layer, the time required for demolding was approximately 600 minutes, and the resulting sample was When a thermal shock resistance test was conducted in the same manner, cracking occurred after 7 tests.
実施例 2
実施例1と同一形状の黒鉛基体に黒鉛粉末を均
一に塗布したこと以外は、実施例1と同じ条件で
p−BNるつぼを製造したところ、離型に費され
た時間は約10分であり、また、黒鉛基体の損傷な
しで試料を5ケ以上作成できることが確認でき
た。さらに、得られた試料を実施例1と同一条件
で耐熱衝撃試験したところ、平均16回まで割れが
生じなかつた。Example 2 A p-BN crucible was manufactured under the same conditions as in Example 1, except that graphite powder was uniformly applied to a graphite substrate having the same shape as in Example 1. The time spent for demolding was approximately 10 It was also confirmed that five or more samples could be prepared without damaging the graphite substrate. Furthermore, when the obtained sample was subjected to a thermal shock resistance test under the same conditions as in Example 1, no cracking occurred up to an average of 16 times.
実施例 3
実施例1と同じ形状の黒鉛基体に、まずCVD
法でp−BNを30μm蒸着した。CVD条件は、
BCl3流量:100SCCM、NH3流量:500SCCM、
H2流量:500SCCM、反応温度:1600℃、反応圧
力:10Torrであつた。蒸着したp−BNの上に
BN紛末を均一に塗布し、CVD炉内で1950℃で10
分間H2気流中で熱処理し、その後引続いてCVD
法によりp−BNを厚さ1.5mm蒸着した。このとき
のCVD条件は、BCl3流量:200SCCM、NH3流
量:1000SCCM、H2流量:1000SCCM、反応温
度:1950℃、反応圧力:10Torrであつた。Example 3 A graphite substrate of the same shape as Example 1 was first subjected to CVD.
p-BN was deposited to a thickness of 30 μm using the method. CVD conditions are
BCl 3 flow rate: 100SCCM, NH 3 flow rate: 500SCCM,
H 2 flow rate: 500 SCCM, reaction temperature: 1600°C, reaction pressure: 10 Torr. On top of the deposited p-BN
Apply BN powder uniformly and heat it in a CVD furnace at 1950℃ for 10 minutes.
Heat treatment in H2 stream for min followed by CVD
p-BN was deposited to a thickness of 1.5 mm using the method. The CVD conditions at this time were: BCl 3 flow rate: 200 SCCM, NH 3 flow rate: 1000 SCCM, H 2 flow rate: 1000 SCCM, reaction temperature: 1950° C., and reaction pressure: 10 Torr.
冷却後炉内より試料を取出し、黒鉛基体から離
型したところ、基体を損傷することなく約10分間
で離型できた。離型した基体を繰返し使用し、上
記条件で試料を5ケ作成し、得られた試料につい
て実施例1と同様にして耐熱衝撃試験したとこ
ろ、平均21回まで割れが生じなかつた。 After cooling, the sample was taken out of the furnace and released from the graphite substrate, and it took approximately 10 minutes to release the sample without damaging the substrate. The released substrate was used repeatedly to prepare 5 samples under the above conditions, and the resulting samples were subjected to a thermal shock resistance test in the same manner as in Example 1. No cracking occurred after an average of 21 cycles.
、実施例 4
実施例3と同様にp−BNを30μm蒸着した黒
鉛基体上に黒鉛粉末を塗布した後、実施例3と同
一条件でp−BNを厚さ1.5mm蒸着した。, Example 4 After coating graphite powder on a graphite substrate on which p-BN was deposited to a thickness of 30 μm in the same manner as in Example 3, p-BN was deposited to a thickness of 1.5 mm under the same conditions as in Example 3.
冷却後炉内より試料を取出し、黒鉛基体の離型
を試みたところ約10分で基体を損傷することなく
離型できた。損傷せずに離型できた黒鉛基体を繰
返し使用し、試料を5ケ作成した。離型した試料
について、600℃から水中に投下するという耐熱
衝撃試験を行つたところ、平均19回まで割れが生
じなかつた。 After cooling, the sample was taken out of the furnace and an attempt was made to release the graphite substrate from the mold, which was completed in about 10 minutes without damaging the substrate. The graphite substrate that could be released from the mold without damage was used repeatedly to prepare five samples. When the released sample was subjected to a thermal shock test by dropping it into water at 600°C, no cracking occurred until an average of 19 times.
以上詳述したように、本発明はp−BNと黒鉛
基体との離型方法として優れているだけでなく、
耐熱衝撃性に優れたp−BNるつぼの製造が可能
であり工業的に極めて効果がある。尚、上記実施
例においては、p−BN成形体としてp−BNる
つぼを得る方法についてのみ述べたが、本発明の
効果を確認し、実用化を図るにはるつぼが適して
いたためである。しかし、本発明によるp−BN
成形体は必ずしもるつぼに限定されないものであ
る。 As detailed above, the present invention is not only excellent as a method for releasing p-BN from a graphite substrate, but also
It is possible to produce a p-BN crucible with excellent thermal shock resistance, and it is extremely effective industrially. In the above example, only the method of obtaining a p-BN crucible as a p-BN molded body was described, but this is because the crucible was suitable for confirming the effects of the present invention and for putting it into practical use. However, p-BN according to the present invention
The molded body is not necessarily limited to a crucible.
第1図は本発明による熱分解窒化硼素るつぼの
製造方法の一実施例を示す図である。
1;黒鉛基体、2;BN紛末からなる剥離粉末
層、3;p−BN。
FIG. 1 is a diagram showing an embodiment of the method for manufacturing a pyrolytic boron nitride crucible according to the present invention. 1: Graphite base, 2: Peeling powder layer made of BN powder, 3: p-BN.
Claims (1)
け、該粉末層上にCVD法により熱分解窒化硼素
を蒸着して成形体を形成した後、前記粉末層を剥
離部として黒鉛基体から前記成形体を離型するこ
とを特徴とする熱分解窒化硼素成形体の製造方
法。 2 特許請求の範囲第1項記載の方法において、
上記基体上にあらかじめCVD法により熱分解窒
化硼素の薄層を蒸着した後、上記剥離用粉末層を
設けたことを特徴とする熱分解窒化硼素成形体の
製造方法。 3 特許請求の範囲第1項または第2項記載の方
法において、上記粉末層が窒化硼素粉末からなる
ことを特徴とする熱分解窒化硼素成形体の製造方
法。 4 特許請求の範囲第1項または第2項記載の方
法において、上記粉末層が黒鉛粉末からなること
を特徴とする熱分解窒化硼素成形体の製造方法。 5 特許請求の範囲第1項ないし第4項記載のい
ずれかの方法において、上記成形体が単結晶用る
つぼであることを特徴とする熱分解窒化硼素成形
体の製造方法。[Scope of Claims] 1. A powder layer for peeling is provided on the surface of a base made of graphite, and pyrolytic boron nitride is deposited on the powder layer by CVD to form a compact, and then the powder layer is attached to a peeling part. 1. A method for producing a pyrolytic boron nitride molded body, comprising: releasing the molded body from a graphite substrate. 2. In the method described in claim 1,
A method for producing a pyrolytic boron nitride molded body, characterized in that a thin layer of pyrolytic boron nitride is deposited on the substrate in advance by a CVD method, and then the peeling powder layer is provided. 3. A method for producing a pyrolytic boron nitride compact according to claim 1 or 2, wherein the powder layer is made of boron nitride powder. 4. A method for producing a pyrolytic boron nitride compact according to claim 1 or 2, wherein the powder layer is made of graphite powder. 5. A method for producing a pyrolytic boron nitride molded body according to any one of claims 1 to 4, wherein the molded body is a single crystal crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59110192A JPS60255676A (en) | 1984-05-30 | 1984-05-30 | Manufacture of pyrolitic boron nitride formed body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59110192A JPS60255676A (en) | 1984-05-30 | 1984-05-30 | Manufacture of pyrolitic boron nitride formed body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60255676A JPS60255676A (en) | 1985-12-17 |
| JPH0229629B2 true JPH0229629B2 (en) | 1990-07-02 |
Family
ID=14529379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59110192A Granted JPS60255676A (en) | 1984-05-30 | 1984-05-30 | Manufacture of pyrolitic boron nitride formed body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60255676A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62182128A (en) * | 1986-02-06 | 1987-08-10 | Shin Etsu Chem Co Ltd | Method for manufacturing optical fiber base material |
| JPH05105523A (en) * | 1991-10-17 | 1993-04-27 | Shin Etsu Chem Co Ltd | Production of pyrolytic boron nitride compact |
| CN107244943B (en) * | 2017-07-10 | 2020-11-03 | 巩义市泛锐熠辉复合材料有限公司 | Preparation method of graphite crucible surface coating for preparing C/C-SiC composite material by reactive melt infiltration method |
| CN108545914B (en) * | 2018-05-18 | 2022-09-06 | 山东国晶新材料有限公司 | Preparation method of anti-peeling pyrolytic boron nitride coating hot bending die for solving oxidation problem |
-
1984
- 1984-05-30 JP JP59110192A patent/JPS60255676A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60255676A (en) | 1985-12-17 |
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