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JPH0232350B2 - SHINKUJOCHAKUSOCHI - Google Patents
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JPH0232350B2 - SHINKUJOCHAKUSOCHI - Google Patents

SHINKUJOCHAKUSOCHI

Info

Publication number
JPH0232350B2
JPH0232350B2 JP16162381A JP16162381A JPH0232350B2 JP H0232350 B2 JPH0232350 B2 JP H0232350B2 JP 16162381 A JP16162381 A JP 16162381A JP 16162381 A JP16162381 A JP 16162381A JP H0232350 B2 JPH0232350 B2 JP H0232350B2
Authority
JP
Japan
Prior art keywords
evaporation
plate
present
substrate
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16162381A
Other languages
Japanese (ja)
Other versions
JPS5864382A (en
Inventor
Koichi Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16162381A priority Critical patent/JPH0232350B2/en
Publication of JPS5864382A publication Critical patent/JPS5864382A/en
Publication of JPH0232350B2 publication Critical patent/JPH0232350B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 本発明は真空蒸着装置にかかり、高分子成形物
基板上に、強磁性金属薄膜を形成し、磁気記録媒
体を得る用途や、半導体薄膜を形成して、光発電
等の機能膜を連続して得る用途等に適した真空蒸
着装置を提供することを目的とする。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum evaporation apparatus, which is used to form a ferromagnetic metal thin film on a polymer molded substrate to obtain a magnetic recording medium, and to form a semiconductor thin film to produce photovoltaic power generation, etc. The purpose of the present invention is to provide a vacuum evaporation apparatus suitable for applications such as continuously obtaining functional films of

近年省エネルギー、省資源の時代要請も手伝つ
て、薄膜の応用が実用規模で検討が広まつてい
る。
In recent years, with the demands of the times for energy and resource conservation, the application of thin films has been widely studied on a practical scale.

本発明は、光学的、磁気的に異方性付与するた
めによく用いられる斜方蒸着等のように、蒸発さ
れた材料のごく一部しか基板上に付着させること
ができない場合、特に有効な装置にかかわるもの
であるが、従来の装置ではたとえ蒸着効率を高め
る工夫をしても、その30〜40%は、直接基板上の
蒸着膜にならず、内部構造体、内壁等に大量に付
着堆積してしまうが、このような装置に適用して
も有用なものである。
The present invention is particularly effective when only a small portion of the evaporated material can be deposited on the substrate, such as in oblique evaporation, which is often used to impart optical or magnetic anisotropy. Regarding equipment, with conventional equipment, even if efforts are made to increase the deposition efficiency, 30 to 40% of the deposited film does not become directly on the substrate, but adheres in large quantities to internal structures, inner walls, etc. However, it is useful even when applied to such a device.

以下、その一実施例について図面を用いて説明
する。本発明は、真空槽(図示せず)内に、高分
子成形物基板1を回転支持体4に沿つて搬送する
機構を具備した蒸着装置を対象とする。
An embodiment thereof will be described below with reference to the drawings. The present invention is directed to a vapor deposition apparatus equipped with a mechanism for transporting a polymer molded substrate 1 along a rotating support 4 in a vacuum chamber (not shown).

搬送機構は、巻き取り軸、送り出し軸、フリー
ローラ、エキスパンダローラ、ダンサーローラー
等の公知の要素を適宜組合せて構成されたもので
あればよい。回転支持体4は、内部に温度調整さ
れた媒体を循環させるよう構成した回転円筒キヤ
ンであつてもよいし、たとえばSUS304の0.2〜
0.5mm厚の薄板をエンドレス化したベルトであつ
てもよいし、また他の方式でもよい。
The conveyance mechanism may be configured by appropriately combining known elements such as a take-up shaft, a feed-out shaft, a free roller, an expander roller, and a dancer roller. The rotating support body 4 may be a rotating cylindrical can configured to circulate a temperature-controlled medium therein, and may be a rotating cylindrical can, for example, made of SUS304 0.2~
It may be a belt made of endless thin plates with a thickness of 0.5 mm, or it may be of other types.

基板1と対向して蒸発源が配設されるが、本発
明は、蒸発源として、電子ビーム加熱式や誘導加
熱式、抵抗加熱式、レーザビーム加熱式等の方式
を使用できるが、それらのうちでも電子ビーム加
熱式が制御性より好ましい。
An evaporation source is disposed facing the substrate 1, and in the present invention, an electron beam heating type, an induction heating type, a resistance heating type, a laser beam heating type, etc. can be used as the evaporation source. Among these, the electron beam heating type is preferable due to its controllability.

第1図では蒸発源を模式的に示しているが、2
はAl2O3,MgO等の耐火物で構成されている容器
であり、3は溶融した状態の蒸発材料である。ま
た、13は後述するせき板である。
Figure 1 schematically shows the evaporation source, but 2
3 is a container made of a refractory material such as Al 2 O 3 or MgO, and 3 is a molten evaporation material. Further, 13 is a weir plate which will be described later.

加速された電子ビーム5は蒸発材料3を加熱
し、その一部気化させる。図の6は蒸発原子を模
式的に示している。これは角度分布を有するが、
一般に2πラジアンの方向に蒸発するといわれる
ものである。この蒸気は磁気テープの製造時によ
く用いられる角度限定のマスク7によりさえぎら
れるが、移動する基板1に一部付着する。また蒸
気の他の一部は回収用防着板8に付着堆積する。
この回収用防着板8は基板1の幅以上の間隔を有
する二つの閉じたチエーン9に固定される。スプ
ロケツト10,11の一方は真空槽の外部より、
導入された回転軸より回転を伝達され位置制御さ
れるよう構成されている。回収用防着板8上に堆
積し板状になつた蒸発材は、容器2の一部に還元
される。図の12がそれを模式的に示している。
板状の蒸発材12の溶解も、好ましくは電子ビー
ムで行うのがよい。
The accelerated electron beam 5 heats the evaporation material 3 and partially vaporizes it. 6 in the figure schematically shows evaporated atoms. This has an angular distribution, but
Generally, it is said to evaporate in the direction of 2π radians. Although this vapor is blocked by an angle-limiting mask 7 often used in the manufacture of magnetic tapes, a portion of it adheres to the moving substrate 1. Further, another part of the vapor adheres and accumulates on the recovery deposition prevention plate 8.
This collection anti-adhesion plate 8 is fixed to two closed chains 9 having an interval greater than the width of the substrate 1. One of the sprockets 10 and 11 is accessed from the outside of the vacuum chamber.
It is configured so that rotation is transmitted from the introduced rotating shaft and the position is controlled. The evaporative material deposited on the collection prevention plate 8 and shaped into a plate is returned to a part of the container 2. 12 in the figure schematically shows this.
The plate-shaped evaporation material 12 is also preferably melted using an electron beam.

この装置の運転について述べる。 The operation of this device will now be described.

蒸発材3の一部は回収用防着板8に付着する。
一定時間または好ましくは付着量をモニタし、必
要な時に、回収防着板8を移動させ、それに付着
した蒸発材料からなる板材12を回収ゾーンに落
下させる。その時はせき板13をおろしておき、
かつ、湯バネトラブルをさけるために、電子ビー
ム5の照射を停止し、一部回収材12を固化させ
る。しかるのち、電子ビーム5の照射を再開し、
蒸発材12を溶融させ、規定温度に達したならば
蒸発させる。そして、蒸発によつて減少した蒸発
材料3を補給するため、せき板13をあげればよ
い。
A part of the evaporative material 3 adheres to the recovery adhesion prevention plate 8.
The amount of adhesion is monitored for a certain period of time or preferably the amount of adhesion is monitored, and when necessary, the recovery adhesion prevention plate 8 is moved and the plate material 12 made of the evaporation material adhering thereto is dropped into the recovery zone. At that time, lower the weir plate 13,
In addition, in order to avoid problems with hot water springs, the irradiation of the electron beam 5 is stopped and a portion of the recovered material 12 is solidified. After that, irradiation with the electron beam 5 was resumed,
The evaporation material 12 is melted and evaporated when a specified temperature is reached. Then, in order to replenish the evaporation material 3 reduced by evaporation, the weir plate 13 may be raised.

なお、回収された蒸発材12を入れる回収ゾー
ンへ、新規蒸発材料をロツド状、ワイヤ状で供給
する機構の有無は本発明の限定要件ではなく、必
要に応じて配設すべきであることは勿論である。
Note that the presence or absence of a mechanism for supplying new evaporation material in the form of a rod or wire to the recovery zone into which the recovered evaporation material 12 is placed is not a limiting requirement of the present invention, and it should be provided as necessary. Of course.

回収の考え方を一例で述べたが、再生ゾーンに
還元する方法、その機構数、制御方法等も適宜選
ぶべきものであるのも当然である。
Although the concept of recovery has been described as an example, it goes without saying that the method of returning the waste to the regeneration zone, the number of mechanisms therefor, the control method, etc. should also be selected appropriately.

第2図は、蒸発源容器の理解を図るために、平
面的に示した図で、Al2O3,MgO等を適当に分割
したものをつき合わせ、接着または別の図形に近
い例えば鉄製容器にスタンプ剤で固定して組立て
ることができるもので、溝をAゾーン、Bゾー
ン、C1,C2ゾーンにわけて示した。
Figure 2 is a plan view to help you understand the evaporation source container. Appropriately divided pieces of Al 2 O 3 , MgO, etc. are brought together and glued together or placed in another shape, such as an iron container. The grooves are shown divided into A zone, B zone, C 1 and C 2 zones.

Aゾーンが蒸発温度にある溶融材料をためる溝
で、15はこの電子ビームの走査軌跡を模式的に
表わしたものである。16も同様に電子ビームの
走査軌跡を示すものである。Bゾーンは新しい蒸
発材料を必要に応じて供給したものと、一度蒸発
し、再凝固した蒸発材料とを再溶解する所であ
る。C1,C2はAとBの両ゾーンを接続する供給
路で、これら供給路C1,C2の途中はせき板13
でせき止められている。このせき板13は、水冷
銅板で構成するより、Al2O3,MgO等の耐火物の
中より選択するのが好ましい。
The A zone is a groove for storing molten material at the evaporation temperature, and 15 schematically represents the scanning locus of this electron beam. 16 similarly shows the scanning locus of the electron beam. The B zone is a place where new evaporation material is supplied as needed and evaporation material that has been evaporated and re-solidified is redissolved. C 1 and C 2 are supply paths connecting both zones A and B, and there are weir plates 13 in the middle of these supply paths C 1 and C 2.
It's being dammed up. This weir plate 13 is preferably selected from refractories such as Al 2 O 3 and MgO, rather than being made of a water-cooled copper plate.

C1,C2路を補助的に加熱することも前述のよ
うに必要に応じて実施されるが、シーズヒータに
よる加熱、誘導加熱、電子ビーム加熱等の中から
選べばよい。
Supplementary heating of the C 1 and C 2 paths may be carried out if necessary as described above, but it may be selected from among heating by a sheathed heater, induction heating, electron beam heating, etc.

なお、回収防着板8は、たとえば、0.5S程度の
表面の平滑なステンレス鋼板で、その表面に蒸着
堆積して板状になつた蒸発材料は弱い接着状態に
あり、Bゾーンの上で衝撃力で落下させることが
できるし、ジヤケツト構造にし、冷却して応力を
加えることでもでき、適宜工夫されるところであ
る。
The collection prevention plate 8 is, for example, a stainless steel plate with a smooth surface of about 0.5S, and the evaporated material deposited on the surface and formed into a plate shape is in a weak adhesive state, and the impact occurs on the B zone. It can be dropped by force, or it can be made into a jacket structure and cooled to apply stress, which can be devised as appropriate.

他の実施例として、蒸発材料と同一の材料の
板、ブロツク、線材等で、回収防着板8を代用す
ることも有効である。これは、別の新規蒸発材料
の供給を兼ねることもできるメリツトをあわせ有
することは注目される点である。
As another embodiment, it is also effective to use a plate, block, wire, etc. made of the same material as the evaporation material in place of the recovery adhesion prevention plate 8. It is noteworthy that this method also has the advantage of being able to supply another new evaporation material.

本発明で得られる効果を本発明装置により、短
波長記録に適した蒸着テープを製造することで確
かめた。
The effects obtained by the present invention were confirmed by manufacturing a vapor-deposited tape suitable for short wavelength recording using the apparatus of the present invention.

円筒キヤン(直径1m)に沿つて、5000m長の
ポリエチレンテレフタレートを45m/分の速度で
移動させ、この基板上に、入射角60゜以上でCo80
%―Ni20%からなる厚さ0.1μmの磁性層を蒸着し
た。
A 5000 m long polyethylene terephthalate is moved along a cylindrical can (1 m diameter) at a speed of 45 m/min, and Co80 is deposited onto this substrate at an incident angle of 60° or more.
A 0.1 μm thick magnetic layer consisting of 20%-Ni was deposited.

本発明によらない新材料の供給のみで上記蒸着
を実施した場合、蒸発材料を100Kg必要であり、
供給装置は大がかりで、かつ、補給のための溶解
パワーは平均56KW(30KV,1.87A)を要した。
これに対して、Co80%―Ni20%からなる厚さ1.5
mmの板を防着板とし、本発明によつた場合、蒸発
材料の重量は30Kgですみ、材料を再度真空溶解し
たため純度向上によると考えられる基板長手方向
の保磁力の安定性、耐蝕性の安定性等の他の大き
なメリツトも確認された。
If the above vapor deposition is carried out only by supplying a new material that is not based on the present invention, 100 kg of evaporation material is required,
The supply equipment was large-scale and required an average of 56KW (30KV, 1.87A) of melting power for supply.
On the other hand, a thickness of 1.5% consisting of 80% Co and 20% Ni
When using the present invention and using a plate of 1.5 mm as the anti-adhesion plate, the weight of the evaporated material is only 30 kg, and since the material is vacuum melted again, the stability of the coercive force in the longitudinal direction of the substrate and the corrosion resistance are improved, which is thought to be due to improved purity. Other major benefits, such as stability, were also identified.

さらに、本発明において、酸素を導入して蒸着
した場合には、回収ゾーンに酸化物が若干浮遊す
ることがあり、これは水冷銅製のカツプで一部す
くい取ることにより除去すれば、品質に全く悪影
響なしに、本発明装置を長尺の機能膜の製造に適
用することができる。これは窒化物等についても
同様である。
Furthermore, in the present invention, when oxygen is introduced for vapor deposition, some oxides may float in the recovery zone, and if this can be removed by scooping some of it with a water-cooled copper cup, it will not affect the quality. The apparatus of the present invention can be applied to the production of long functional membranes without any adverse effects. This also applies to nitrides and the like.

本発明により、半連続の巻取り蒸着の技術応用
展開は、広く機能膜の製造につながるもので、そ
の工業的有価値性は極めて大きいものである。
According to the present invention, the technical application and development of semi-continuous coiled deposition will lead to the production of a wide range of functional films, and its industrial value is extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明にかかる真空蒸着装置の一実施
例の要部断面図、第2図は本発明の真空蒸着装置
で使用される蒸発源装置の一例を示す平面図であ
る。 1……高分子成形物基板、2……耐火物からな
る容器、3……蒸発材料、4……回転支持体、5
……電子ビーム、6……蒸発原子、7……マス
ク、8……回収用防着板、9……チエーン、1
0,11……スプロケツト、12……回収された
板状蒸発材、13……せき板。
FIG. 1 is a sectional view of a main part of an embodiment of a vacuum evaporation apparatus according to the present invention, and FIG. 2 is a plan view showing an example of an evaporation source device used in the vacuum evaporation apparatus of the present invention. DESCRIPTION OF SYMBOLS 1... Polymer molded substrate, 2... Container made of refractory material, 3... Evaporation material, 4... Rotating support, 5
... Electron beam, 6 ... Evaporated atoms, 7 ... Mask, 8 ... Collection prevention plate, 9 ... Chain, 1
0, 11... Sprocket, 12... Recovered plate-shaped evaporation material, 13... Weir plate.

Claims (1)

【特許請求の範囲】[Claims] 1 真空槽内に、高分子成形物基板を回転支持体
に沿つて搬送する機構、蒸発源より前記基板方向
と異なる方向へ蒸発する物質を回収する機構およ
び回収された蒸発物質を蒸発源容器に供給する機
構を有することを特徴とする真空蒸着装置。
1 In a vacuum chamber, a mechanism for transporting a polymer molded substrate along a rotating support, a mechanism for recovering a substance evaporated from an evaporation source in a direction different from the direction of the substrate, and a mechanism for transferring the recovered evaporation substance to an evaporation source container. A vacuum evaporation apparatus characterized by having a supply mechanism.
JP16162381A 1981-10-09 1981-10-09 SHINKUJOCHAKUSOCHI Expired - Lifetime JPH0232350B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16162381A JPH0232350B2 (en) 1981-10-09 1981-10-09 SHINKUJOCHAKUSOCHI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16162381A JPH0232350B2 (en) 1981-10-09 1981-10-09 SHINKUJOCHAKUSOCHI

Publications (2)

Publication Number Publication Date
JPS5864382A JPS5864382A (en) 1983-04-16
JPH0232350B2 true JPH0232350B2 (en) 1990-07-19

Family

ID=15738696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16162381A Expired - Lifetime JPH0232350B2 (en) 1981-10-09 1981-10-09 SHINKUJOCHAKUSOCHI

Country Status (1)

Country Link
JP (1) JPH0232350B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60114569A (en) * 1983-11-22 1985-06-21 Hitachi Condenser Co Ltd Vacuum deposition device
JP5857176B2 (en) * 2009-05-13 2016-02-10 パナソニックIpマネジメント株式会社 Vapor deposition apparatus and vapor deposition method using the same
JP5299096B2 (en) * 2009-06-05 2013-09-25 パナソニック株式会社 Vapor deposition equipment

Also Published As

Publication number Publication date
JPS5864382A (en) 1983-04-16

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