JPH0232707B2 - - Google Patents
Info
- Publication number
- JPH0232707B2 JPH0232707B2 JP56127060A JP12706081A JPH0232707B2 JP H0232707 B2 JPH0232707 B2 JP H0232707B2 JP 56127060 A JP56127060 A JP 56127060A JP 12706081 A JP12706081 A JP 12706081A JP H0232707 B2 JPH0232707 B2 JP H0232707B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- bubble
- conductor layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
Description
【発明の詳細な説明】
本発明は電流駆動型磁気バブル素子に関するも
のである。磁気バブル(以下単にバブルという)
を情報の担体として用いる記憶素子においてバブ
ルの転送方式は、パーマロイの如き軟磁性膜でで
きたシエブロン型やY型を呈したパタンを外部よ
り印加する面内回転磁界によつて順次磁化するこ
とによつて生じる磁極にバブルを引きつけて転送
させる、いわゆる磁界駆動方式が一般的であつ
た。しかしながら、この磁界駆動方式は、記憶密
度を大きくするためにバブル径を小さくするに従
つてバブル転送に必要な面内回転磁界が急激に大
きくなり、消費電力が大きくなるとともに面内回
転磁界発生用コイルに印加する電圧が増大し、高
速転送に適さなくなるという大きな欠点を持つて
いることは、よく知られている。このような磁界
駆動方式の欠点を克服するためには、面内磁界発
生用コイルを用いないバブルの転送方式を実現し
なければならない。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a current-driven magnetic bubble element. Magnetic bubble (hereinafter simply referred to as bubble)
The bubble transfer method in a memory element that uses a soft magnetic film such as permalloy in a memory element is to sequentially magnetize a chevron-shaped or Y-shaped pattern made of a soft magnetic film such as permalloy using an in-plane rotating magnetic field applied from the outside. The so-called magnetic field drive method, in which bubbles are attracted to the resulting magnetic poles and transferred, has been common. However, with this magnetic field drive method, as the bubble diameter is reduced to increase storage density, the in-plane rotating magnetic field required for bubble transfer increases rapidly, resulting in increased power consumption and the ability to generate in-plane rotating magnetic fields. It is well known that this method has a major disadvantage in that the voltage applied to the coil increases, making it unsuitable for high-speed transfer. In order to overcome these drawbacks of the magnetic field drive system, it is necessary to realize a bubble transfer system that does not use a coil for generating an in-plane magnetic field.
面内磁界発生用コイルを用いないバブルの転送
方式としては、すでに磁性薄膜上に形成された導
体線路は交流電流を流してバブルを駆動する電流
駆動方式(以下、本発明が係わる極く新しい電流
駆動方式と区別するため、初期電流駆動方式とい
う。)が公知となつている。この初期電流駆動方
式に対しては、いくらかの改良がなされたが、導
体線路の形状が複雑すぎることや、バブルの運動
に方向性を持たせるために不可欠なパーマロイの
薄片とバブルとの磁気的相互作用に起因する捕捉
力に抗してバブルを転送しなければならないこと
などの原因により、記憶密度を上げようとすると
素子の消費電力が著しく大きくなり実用的ではな
かつた。 As a bubble transfer method that does not use an in-plane magnetic field generating coil, a conductor line already formed on a magnetic thin film is a current drive method (hereinafter referred to as an extremely new current drive method to which the present invention relates) in which a conductor line formed on a magnetic thin film is used to drive a bubble by passing an alternating current. (referred to as the initial current drive method to distinguish it from the drive method) is well known. Although some improvements have been made to this initial current drive system, the shape of the conductor line is too complex, and the magnetic connection between the permalloy thin piece and the bubble, which is essential for giving directionality to the bubble motion, is a problem. Due to factors such as the need to transfer bubbles against the trapping force caused by interactions, attempts to increase storage density significantly increase the power consumption of the device, making it impractical.
このような磁界駆動方式や初期電流駆動方式で
は避け得なかつたこれらの欠点を克服するために
近年、二層導体型電流駆動方式と呼ばれる新しい
電流駆動方式が提案された。この二層導体型電流
駆動方式では、初期電流駆動方式に比べ非常に単
純な開孔パターンを使用すればよいため、飛躍的
に記憶密度を向上させることができる。 In order to overcome these drawbacks that cannot be avoided with the magnetic field drive method and the initial current drive method, a new current drive method called a two-layer conductor type current drive method has been proposed in recent years. In this two-layer conductor type current drive method, a much simpler opening pattern can be used than in the initial current drive method, so that the storage density can be dramatically improved.
しかしながら、二層導体型電流駆動方式におい
ては、二層の導体層を各々独立に駆動しなければ
ならないため、消費電力が非常に大きくなる上に
周辺回路が著しく複雑になるという重大な欠点を
有している。 However, the two-layer conductor type current drive system has the serious drawbacks of extremely high power consumption and extremely complex peripheral circuits because each of the two conductor layers must be driven independently. are doing.
本発明の目的は、非常に簡単な周辺回路を用い
て、できる限り微少な電流でバブルを転送し得る
一層導体型電流駆動磁気バブル素子を提供するこ
とにある。 An object of the present invention is to provide a single-conductor current-driven magnetic bubble element that can transfer bubbles with as little current as possible using a very simple peripheral circuit.
本発明の原理を説明する前に、次の磁性材料の
一般性質を述べておく。たとえば、エル・シユル
ツ(L.Schltz)等によつて1979年10月にジヤーナ
ル・オブ・アブライド・フイジクス(Journal of
Applied Physics)誌第50巻第11号第7862頁〜第
7864頁に発表された論文に記載されているよう
に、磁歪を有するバブル材料上に設けられた張力
性の薄膜パターンのエツジ部では磁壁エネルギー
は第1図の様に変化する。第1図中、横軸1は磁
壁の位置を縦軸2は磁壁エネルギーを、3は磁壁
エネルギー分布を、4は張力性の薄膜パターンを
示している。 Before explaining the principle of the present invention, the following general properties of magnetic materials will be described. For example, in October 1979, L. Schltz et al.
Applied Physics) Vol. 50 No. 11 No. 7862-No.
As described in the paper published on page 7864, the domain wall energy changes as shown in Figure 1 at the edge of a tensile thin film pattern provided on a magnetostrictive bubble material. In FIG. 1, the horizontal axis 1 indicates the position of the domain wall, the vertical axis 2 indicates the domain wall energy, 3 indicates the domain wall energy distribution, and 4 indicates the tensile thin film pattern.
本発明は上記の磁性材料の性質を利用した以下
の原理にもとづいて、初期電流駆動方式や二層導
体型電流駆動方式などの従来の電流駆動方式に残
されていた重大な欠点を取り除くものである。 The present invention is based on the following principle that utilizes the properties of the above-mentioned magnetic materials, and eliminates the serious drawbacks of conventional current drive systems such as the initial current drive system and the two-layer conductor type current drive system. be.
第2図は本発明の基本原理を示した図である。
第2図において5は、バブル6及び7の矢印はバ
ブル磁壁が受ける駆動力の方向、8は張力性の薄
膜パターンの境界14の矢印はバイアス磁界の方
向である。バブルが第2図aの位置にある場合に
は薄膜パターン境界の右側では第1図3に示され
る磁壁エネルギーが薄膜パターン境界に近づくに
つれて小さくなるため薄膜パターン境界の右側の
バブル磁壁は矢印7で示される向きに駆動力を受
ける。薄膜パターン境界の左側では磁壁エネルギ
ーが薄膜パターン境界から遠ざかるにつれて小さ
くなるため薄膜パターン境界の左側のバブル磁壁
は矢印6で示される向きに駆動力を受ける。 FIG. 2 is a diagram showing the basic principle of the present invention.
In FIG. 2, arrows 5 for bubbles 6 and 7 indicate the direction of the driving force applied to the bubble domain wall, and 8 indicates the direction of the bias magnetic field at the boundary 14 of the tensile thin film pattern. When the bubble is at the position shown in Fig. 2a, on the right side of the thin film pattern boundary, the domain wall energy shown in Fig. 1 3 decreases as it approaches the thin film pattern boundary, so the bubble domain wall on the right side of the thin film pattern boundary is shown by arrow 7. Receives driving force in the direction shown. On the left side of the thin film pattern boundary, the domain wall energy decreases as the distance from the thin film pattern boundary increases, so the bubble domain wall on the left side of the thin film pattern boundary receives a driving force in the direction shown by arrow 6.
したがつてバブルは全体として薄膜パターンの
内側へ向かうような駆動力を受ける。このためバ
ブルに外力が作用していない場合には、バブルは
第2図aで示される位置に停留することはできず
磁壁エネルギーが最小となる位置すなわち第2図
bで示される安定位置まで移動する。 Therefore, the bubble as a whole receives a driving force that directs it toward the inside of the thin film pattern. Therefore, if no external force is acting on the bubble, the bubble cannot stay at the position shown in Figure 2a, but moves to the position where the domain wall energy is minimum, that is, the stable position shown in Figure 2b. do.
次に上記のような基本原理に基づく本発明の一
層導体型電流駆動磁気バブル素子の動作原理を第
3図を用いて、わかりやすくモデル的に示す。 Next, the operating principle of the single-layer conductive current-driven magnetic bubble element of the present invention based on the above-mentioned basic principle will be illustrated in an easy-to-understand model using FIG.
第3図a,第3図b,第3図c,第3図dにお
いて縦軸11は電流値、横軸10は時刻、12は
電流波形、50,51,52,53,54,5
5,56,57,は横軸10上の各時刻を表わ
す。 3a, 3b, 3c, and 3d, the vertical axis 11 is the current value, the horizontal axis 10 is the time, 12 is the current waveform, 50, 51, 52, 53, 54, 5
5, 56, 57, represent each time on the horizontal axis 10.
第3図a,第3図b,第3図c,第3図dにお
いて5はバブル、13,17の矢印は電流の方
向、14の矢印はバイアス磁界の方向、15は張
力性の導体層中に設けた転送用あなあきパター
ン、16は導体層と対面して形成した張力性の非
磁性薄膜層中に設けたあなあきパターンである。 In Figure 3a, Figure 3b, Figure 3c, and Figure 3d, 5 is a bubble, arrows 13 and 17 are the direction of current, arrow 14 is the direction of the bias magnetic field, and 15 is a tensile conductor layer. The transfer perforation pattern 16 provided inside is a perforation pattern provided in a tensile nonmagnetic thin film layer formed facing the conductor layer.
導体層に第3図aの12で示されるような両極
性の電流パルスを印加すると第3図aの50−5
1間の時間では転送用あなあきパターンによる電
流の乱れに起因したバイアス磁界分布が生じるた
め、第3図bで示される位置がバブルの安定点と
なる。次の51−52間の時間では、導体層に電
流が流れていず、電流の乱れに起因したバイアス
磁界分布は消失しているため、第2図を用いて説
明した基本原理に基づいてバブルは第3図cに示
される位置まで移動する。次の52−53間の時
間では、再び電流の乱れに起因したバイアス磁界
分布が生じるためバブルは磁界勾配による駆動力
を受け第3図dに示される安定点まで移動する。
次の53−54間の時間では電流の乱れに起因し
たバイアス磁界分布は消失しているため、前記の
基本原理に基づいてバブルは第3図eに示される
位置まで移動する。 When a bipolar current pulse as shown at 12 in FIG. 3a is applied to the conductor layer, 50-5 in FIG.
During the time period of 1 hour, a bias magnetic field distribution occurs due to current disturbance due to the perforation pattern for transfer, so the position shown in FIG. 3b becomes the stable point of the bubble. During the next time period 51-52, no current flows in the conductor layer and the bias magnetic field distribution caused by the current disturbance disappears, so the bubble is generated based on the basic principle explained using Fig. 2. Move to the position shown in Figure 3c. In the next time period 52-53, the bias magnetic field distribution due to the current disturbance occurs again, so the bubble receives a driving force from the magnetic field gradient and moves to the stable point shown in FIG. 3d.
In the next time period 53-54, the bias magnetic field distribution caused by the current disturbance disappears, so the bubble moves to the position shown in FIG. 3e based on the above-mentioned basic principle.
したがつて、第3図aに示されるような両極性
電流パルス列を継続して導体層に印加することに
より、第3図bに示されるような転送用あなあき
パターン及び非磁性薄膜中に設けたあなあきパタ
ーンによつて規定される転送路に沿つてバブルを
安定に転送させることができる。 Therefore, by continuously applying a bipolar current pulse train as shown in FIG. 3a to the conductor layer, a perforated transfer pattern as shown in FIG. Bubbles can be stably transferred along the transfer path defined by the open pattern.
すなわち、本発明の一層導体型電流駆動磁気バ
ブル素子は磁気バブルを保持し得る磁性薄膜上に
周期的に配列した転送用あなあきパターン列を備
えた一層の導体層を形成し、前記転送用あなあき
パターン列と同じ周期を有するあなあきパターン
列もしくは島状パターン列を備えた張力性あるい
は圧縮性の非磁性薄膜層を前記導体層と互いに隔
離し、電気的にも絶縁するように対面させて形成
し、導体層に流す交流電流によつて生じる時間変
調された磁界勾配によつて磁気バブルを転送する
ことを特徴とする。 That is, the single-layer conductor type current-driven magnetic bubble element of the present invention has a single conductor layer provided with a row of transfer hole perforations arranged periodically on a magnetic thin film capable of holding magnetic bubbles, and A tensile or compressible non-magnetic thin film layer having a perforated pattern row or an island pattern row having the same period as the perforation pattern row is isolated from the conductor layer and faced to each other so as to be electrically insulated. It is characterized in that magnetic bubbles are transferred by a time-modulated magnetic field gradient generated by an alternating current flowing through the conductor layer.
次に第4図を用いて本発明の実施例を示す。 Next, an embodiment of the present invention will be shown using FIG.
第4図において、20の矢印は導体層に流す両
極性パルス電流の方向、14の矢印はバイアス磁
界の方向、5はバブルである。第4図aの実施例
において15はバブルを保持し得る磁性薄膜上に
形成した張力性の導体層中に設けた転送用あなあ
きパターン16は前記導体層の上側に導体層と対
面して形成した張力性の非磁性薄膜中に設けたあ
なあきパターンである。第4図aの実施例にもと
ずき、張力性の導体層として厚さ2500Å程度の
AlCu合金を蒸着により形成し、1500Å程度のス
ペーサーを介し、前記導体層と対面して6000Å程
度のAlCu合金を蒸着により形成して実際に本発
明の一層導体型電流駆動磁気バブル素子を作製し
たところ駆動電流3mA/μmでバブルが安定に
転送されることが実験的にも確認された。第4図
bは圧縮性の非磁性薄膜中の島状パターン25を
用いた実施の一例である。圧縮性の非磁性薄膜を
用いた場合、パターン境界付近の磁壁エネルギー
分布は、第1図の3の磁壁エネルギー分布を縦軸
2に関して折り返したような分布になる。したが
つて非磁性薄膜を用いる場合には、パターンの形
状を島状パターンにすることにより第3図を用い
て説明した動作原理と同様の原理の動作原理にも
とずいてバブルの転送を行なうことができる。第
4図cは第4図aのパターン形状を楕円形にした
実施例である。第4図cにおいて26は、張力性
の導体層中に設けた転送用楕円形あなあきパター
ン、27は張力性の非磁性薄膜中に設けた楕円形
あなあきパターンである。このように楕円形のパ
ターンを用いた場合パターン境界はある曲率を有
することになるが、楕円パターン列の中心軸上で
の磁壁エネルギー分布は、第1図の3の磁壁エネ
ルギー分布と定性的には等しくなるため、第3図
を用いて説明した動作原理と同様の動作原理によ
つてバブルの転送を行なうことができる。 In FIG. 4, the arrow 20 indicates the direction of the bipolar pulse current flowing through the conductor layer, the arrow 14 indicates the direction of the bias magnetic field, and 5 indicates the bubble. In the embodiment shown in FIG. 4a, 15 is a tensile conductor layer formed on a magnetic thin film capable of retaining bubbles, and a transfer perforation pattern 16 is formed on the upper side of the conductor layer, facing the conductor layer. This is a perforated pattern formed in a tensile non-magnetic thin film. Based on the embodiment shown in Figure 4a, a tensile conductor layer with a thickness of about 2500 Å is
An AlCu alloy was formed by vapor deposition, and an AlCu alloy of about 6000 Å was formed by vapor deposition facing the conductor layer with a spacer of about 1500 Å interposed therebetween to actually fabricate the single-layer conductive current-driven magnetic bubble element of the present invention. It was also experimentally confirmed that bubbles were stably transferred at a driving current of 3 mA/μm. FIG. 4b shows an example of an implementation using an island pattern 25 in a compressible non-magnetic thin film. When a compressible non-magnetic thin film is used, the domain wall energy distribution near the pattern boundary becomes a distribution similar to the domain wall energy distribution 3 in FIG. 1 folded about the vertical axis 2. Therefore, when using a nonmagnetic thin film, the bubble transfer is performed based on the same operating principle as that explained using FIG. 3 by making the pattern into an island pattern. be able to. FIG. 4c is an embodiment in which the pattern shape of FIG. 4a is made into an ellipse. In FIG. 4c, 26 is an elliptical perforation pattern for transfer provided in the tensile conductor layer, and 27 is an elliptical perforation pattern provided in the tensile nonmagnetic thin film. When an elliptical pattern is used in this way, the pattern boundary will have a certain curvature, but the domain wall energy distribution on the central axis of the elliptical pattern row is qualitatively similar to the domain wall energy distribution 3 in Figure 1. are equal, so bubble transfer can be performed using the same operating principle as explained using FIG.
導体層及び非磁性薄膜中のパターン形状として
は、第4図に示した実施例以外にも種々の形状の
ものが考えられるが、第3図を用いて説明した如
き動作原理によりバブルを転送し得る形状であれ
ば、すべて本発明に含まれることはいうまでもな
い。又、非磁性薄膜として導体、絶縁体材料のい
づれを用いても良いことは勿論である。 Although various shapes of patterns in the conductor layer and nonmagnetic thin film are conceivable in addition to the example shown in FIG. 4, bubbles can be transferred based on the operating principle as explained using FIG. It goes without saying that any shape that can be obtained is included in the present invention. Furthermore, it goes without saying that either a conductor or an insulator material may be used as the nonmagnetic thin film.
第1図は、エル・シユルツらの論文に示されて
いる説明図の一部である。横軸1は磁壁の位置、
縦軸2は磁壁エネルギー、3は磁壁エネルギー分
布、4は張力性の薄膜パターンを示す。
第2図は本発明の基本原理を示す図である。
4は張力性の薄膜パターン、5はバブル、6,
7はバブル磁壁が受ける駆動力の方向、8は薄膜
パターンの境界、14の矢印はバイアス磁界の方
向である。
第3図は本発明の動作原理を、わかりやすくモ
デル的に示した図である。横軸10は時間、縦軸
11は電流値、12は電流波形、50,51,5
2,53,54,55,56,57は横軸10上
の各時刻、5はバブル13,17の矢印は電流は
電流の方向、14の矢印はバイアス磁界の方向、
15は張力性の導体層中に設けた転送用あなあき
パターン、16は張力性の非磁性薄膜中に設けた
あなあきパターンである。
第4図は本発明の実施例を示す図である。5は
バブル、14の矢印はバイアス磁界の方向、20
の矢印は電流の方向、15は張力性の導体層中に
設けたあなあきパターン、16は張力性の非磁性
薄膜中に設けたあなあきパターン、25は圧縮性
の非磁性薄膜中に設けた島状パターン、26は張
力性の導体層中に設けた転送用楕円用楕円形あな
あきパターン、27は張力性の非磁性薄膜中に設
けた楕円形あなあきパターンである。
FIG. 1 is part of the illustration shown in the paper by El Schulz et al. Horizontal axis 1 is the position of the domain wall,
The vertical axis 2 indicates the domain wall energy, 3 indicates the domain wall energy distribution, and 4 indicates the tensile thin film pattern. FIG. 2 is a diagram showing the basic principle of the present invention. 4 is a tensile thin film pattern, 5 is a bubble, 6,
Reference numeral 7 indicates the direction of the driving force applied to the bubble domain wall, 8 indicates the boundary of the thin film pattern, and arrow 14 indicates the direction of the bias magnetic field. FIG. 3 is a diagram illustrating the operating principle of the present invention in an easy-to-understand model. Horizontal axis 10 is time, vertical axis 11 is current value, 12 is current waveform, 50, 51, 5
2, 53, 54, 55, 56, 57 are each time on the horizontal axis 10, 5 is the arrow of the bubbles 13 and 17, the direction of the current is the direction of the current, the arrow of 14 is the direction of the bias magnetic field,
15 is a perforated pattern for transfer provided in the tensile conductor layer, and 16 is a perforated pattern provided in the tensile nonmagnetic thin film. FIG. 4 is a diagram showing an embodiment of the present invention. 5 is the bubble, 14 arrow is the direction of the bias magnetic field, 20
The arrow indicates the direction of the current, 15 is a perforation pattern provided in a tensile conductor layer, 16 is a perforation pattern provided in a tensile nonmagnetic thin film, and 25 is a perforation pattern provided in a compressible nonmagnetic thin film. The island pattern 26 is an elliptical perforation pattern for transfer ellipse provided in the tensile conductor layer, and 27 is an elliptical perforation pattern provided in the tensile nonmagnetic thin film.
Claims (1)
有する磁性薄膜上に、周期的に配列した転送用あ
なあきパターン列を備えた一層の導体層を形成し
前記転送用あなあきパターン列と同じ周期を有す
るあなあきパターン列もしくは島状パターン列を
備えた張力性あるいは圧縮性の非磁性薄膜層を前
記導体層と互いに隔離し電気的にも絶縁するよう
に対面させて形成し、導体層に流す交流電流によ
つて生じる時間変調された磁界勾配によつて磁気
バブルを転送することを特徴とした一層導体型電
流駆動磁気バブル素子。1. On a magnetic thin film having a non-zero magnetostriction constant capable of holding magnetic bubbles, a single conductor layer with a row of perforated transfer patterns arranged periodically is formed, and the conductor layer has the same period as the perforated pattern rows for transfer. A tensile or compressible non-magnetic thin film layer having a perforated pattern row or an island pattern row is formed facing the conductor layer so as to be isolated from each other and electrically insulated, and an alternating current is applied to the conductor layer. A single-layer conductive current-driven magnetic bubble device characterized in that magnetic bubbles are transferred by a time-modulated magnetic field gradient generated by an electric current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56127060A JPS5829189A (en) | 1981-08-13 | 1981-08-13 | Unilayer conductor type current driving magnetic bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56127060A JPS5829189A (en) | 1981-08-13 | 1981-08-13 | Unilayer conductor type current driving magnetic bubble element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5829189A JPS5829189A (en) | 1983-02-21 |
| JPH0232707B2 true JPH0232707B2 (en) | 1990-07-23 |
Family
ID=14950593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56127060A Granted JPS5829189A (en) | 1981-08-13 | 1981-08-13 | Unilayer conductor type current driving magnetic bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5829189A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428805U (en) * | 1990-06-30 | 1992-03-09 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63175164A (en) * | 1986-12-30 | 1988-07-19 | 内外特殊染工株式会社 | Fabric washing apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567180A (en) * | 1979-06-28 | 1981-01-24 | Fujitsu Ltd | Character recognizing method for optical character reader |
| JPS5693171A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Current access bubble magnetic domain element |
| JPS5693172A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Bubble magnetic domain element of current access type |
| JPS5694570A (en) * | 1979-12-27 | 1981-07-31 | Nec Corp | Bubble magnetic domain element of current access type |
-
1981
- 1981-08-13 JP JP56127060A patent/JPS5829189A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428805U (en) * | 1990-06-30 | 1992-03-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5829189A (en) | 1983-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5325254A (en) | Thin film inductive transducer having improved yoke and pole tip structure | |
| JPH08212517A (en) | Small read/write magnetic head with biased giantic magnetoresistance (gmr) element,its manufacture and flux- transition detection method by it | |
| US4192012A (en) | Crosstie memory bit stretcher detector | |
| JPH05297083A (en) | Magnetic field sensitive device | |
| JP2619365B2 (en) | Bloch line memory writing method | |
| JP2020155558A (en) | Magnetic memory | |
| JP5658721B2 (en) | Magnetic memory | |
| JP5727908B2 (en) | Magnetic memory element | |
| US4162537A (en) | Magnetic bubble memory | |
| JPH0232707B2 (en) | ||
| JPH04229401A (en) | Magnetic recording apparatus for multiple magnetic heads | |
| JPH0313674B2 (en) | ||
| US4143419A (en) | Magnetic bubble memory with single level electrically-conducting, drive arrangement | |
| JPS5810792B2 (en) | Bubble domain nuclear generator | |
| JPS5864692A (en) | One-layered conductor type current driving magnetic bubble element | |
| US4283775A (en) | Contiguous disk bubble storage | |
| CA1118097A (en) | Conductor access bubble memory | |
| JPS5933613A (en) | Magnetic pole of thin film magnetic head and its production | |
| JPH0778987B2 (en) | Bloch line memory and information transfer method thereof | |
| US3471836A (en) | Rotational mode magnetic film memory | |
| US4476544A (en) | Current-controlled magnetic domain memory | |
| US4142247A (en) | Conductor-driven magnetic bubble memory with an expander-detector arrangement | |
| JPS5855594B2 (en) | magnetic bubble element | |
| JPS6136316B2 (en) | ||
| JPS5824867B2 (en) | Conductor-driven bubble memory |