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JPH0234142B2 - - Google Patents
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JPH0234142B2 - - Google Patents

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Publication number
JPH0234142B2
JPH0234142B2 JP56025459A JP2545981A JPH0234142B2 JP H0234142 B2 JPH0234142 B2 JP H0234142B2 JP 56025459 A JP56025459 A JP 56025459A JP 2545981 A JP2545981 A JP 2545981A JP H0234142 B2 JPH0234142 B2 JP H0234142B2
Authority
JP
Japan
Prior art keywords
lens
selected area
sample
objective lens
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56025459A
Other languages
Japanese (ja)
Other versions
JPS57141851A (en
Inventor
Akira Yonezawa
Takashi Yanaka
Kohei Shirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akashi Seisakusho KK
Original Assignee
Akashi Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akashi Seisakusho KK filed Critical Akashi Seisakusho KK
Priority to JP56025459A priority Critical patent/JPS57141851A/en
Publication of JPS57141851A publication Critical patent/JPS57141851A/en
Publication of JPH0234142B2 publication Critical patent/JPH0234142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Description

【発明の詳細な説明】 本発明は、対物レンズ、中間レンズ、投影レン
ズ、及び制限視野絞りを有する透過型電子顕微
鏡、特に球面収差及び色収差を低く抑えながら良
質な低倍率高視野像を得ることが出来る様改良し
た透過型電子顕微鏡に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention is directed to a transmission electron microscope having an objective lens, an intermediate lens, a projection lens, and a selected area diaphragm, in particular, to obtain a high-quality low-magnification high-field image while suppressing spherical aberration and chromatic aberration. This relates to a transmission electron microscope that has been improved to allow for.

透過型電子顕微鏡(以下、単に電子顕微鏡とい
う)において得られる像の質は結像レンズ系の球
面収差及び色収差の影響を強く受ける。この球面
収差及び色収差による影響を小さくするために、
通常対物レンズは、比較的強励磁にして使用され
る。ところが、他方において、電子顕微鏡の性能
を決める要因として低倍像観察をする際広視野像
が得られること及び視野周辺部における像のボケ
や歪みが生じないことも重要な因子となつている
が、上記のように対物レンズを強励磁にして使用
すると、数十倍から二千倍程度の倍率で良質な広
視野像を得ることは難しい。したがつて、従来か
ら通常の電子顕微鏡では、対物レンズの励磁を極
めて弱くするか又はゼロにし、当該対物レンズの
後方に配置した中間レンズの物面を試料面にほぼ
一致させて低倍率像を得ている。このように、広
視野像を得るために対物レンズを極めて弱励磁に
すると、例えば試料上の2mmφから0.1mmφ程度
の比較的広範囲を照射した場合、この試料を透過
した電子線束は対物絞りに集束しないので、投影
像のコントラストを増すために対物絞りを使用す
ることが出来ず、これを解決するために種々の工
夫がされている。かかる工夫を施した電子顕微鏡
の従来例としては、例えば第1図及び第2図に示
すものがある。
The quality of images obtained in a transmission electron microscope (hereinafter simply referred to as an electron microscope) is strongly influenced by the spherical aberration and chromatic aberration of the imaging lens system. In order to reduce the influence of this spherical aberration and chromatic aberration,
Usually, the objective lens is used with relatively strong excitation. However, on the other hand, the ability to obtain a wide field of view during low-magnification observation and the absence of image blur or distortion at the periphery of the field of view are also important factors that determine the performance of an electron microscope. When the objective lens is used with strong excitation as described above, it is difficult to obtain a high-quality wide-field image at a magnification of several tens to 2,000 times. Therefore, in conventional electron microscopes, the excitation of the objective lens is made extremely weak or zero, and the object plane of an intermediate lens placed behind the objective lens is made to almost match the sample plane to obtain a low-magnification image. It has gained. In this way, when the objective lens is extremely weakly excited to obtain a wide-field image, for example, when a relatively wide area of the sample from 2 mmφ to 0.1 mmφ is irradiated, the electron beam transmitted through the sample is focused on the objective aperture. Therefore, it is not possible to use an objective aperture to increase the contrast of the projected image, and various efforts have been made to solve this problem. Examples of conventional electron microscopes with such a design include those shown in FIGS. 1 and 2, for example.

第1図に示す電子顕微鏡は、最終段の集束レン
ズ1の後方に配置された対物レンズ3と、この対
物レンズ3の後方に配置された中間レンズ5と、
投影レンズ或は第2段目以降の中間レンズから構
成される結像レンズ7と、対物レンズ3と中間レ
ンズ5との間に配置された制限視野絞り4とを有
し、対物レンズ3の部分に配置した試料2を投影
面に拡大して投影するようになつた顕微鏡構造に
おいて、対物レンズ3を極めて弱励磁にし、試料
2を透過した電子線束8を中間レンズ5前方の制
限視野絞り4位置に集束させた例である。このよ
うに制限視野絞り4に電子線束8を集束させるた
め、対物絞りに代わつて制限視野絞り4を操作
し、低倍率広視野像のコントラストを増加させる
ことが可能になる。
The electron microscope shown in FIG. 1 includes an objective lens 3 placed behind a condensing lens 1 at the final stage, an intermediate lens 5 placed behind this objective lens 3,
It has an imaging lens 7 composed of a projection lens or an intermediate lens from the second stage onward, and a selected area diaphragm 4 disposed between the objective lens 3 and the intermediate lens 5, and a portion of the objective lens 3. In the microscope structure, which enlarges and projects the sample 2 placed on the projection plane, the objective lens 3 is extremely weakly excited, and the electron beam 8 transmitted through the sample 2 is directed to the selected area aperture 4 position in front of the intermediate lens 5. This is an example of focusing on Since the electron beam flux 8 is focused on the selected area diaphragm 4 in this manner, it becomes possible to operate the selected area diaphragm 4 instead of the objective diaphragm to increase the contrast of the low-magnification wide-field image.

第2図に示す電子顕微鏡は、第1図に示す電子
顕微鏡と同様の顕微鏡構造において、対物レンズ
3の励磁をゼロとする一方、最終段の集束レンズ
1及びこれより前方に配置した集束レンズの励磁
を適当に設定して、試料2を透過した電子線束8
を中間レンズ5前方の制限視野絞り4位置に集束
させた例である。この例においても、上記第1図
に示す例と同様、制限視野絞り4を操作して低倍
率広視野像のコントラストを増加させることがで
きる。
The electron microscope shown in FIG. 2 has the same microscope structure as the electron microscope shown in FIG. Electron beam flux 8 transmitted through sample 2 with appropriate excitation settings
This is an example in which the light is focused at the selected area diaphragm 4 position in front of the intermediate lens 5. In this example, as in the example shown in FIG. 1 above, the contrast of the low magnification wide-field image can be increased by operating the selected area diaphragm 4.

しかしながら、上に示した従来の電子顕微鏡に
おいて採用した結像法はいずれも、投影像のひづ
み及び周辺ボケの比較的少ない広視野像を得るこ
とを可能にするが、球面収差及び色収差を充分に
小さくすることはできないという問題があつた。
即ち、第1図及び第2図に示したような、第1段
目の中間レンズ5によつて後続の中間レンズ又は
投影レンズといつた結像レンズ7の物面6に試料
2の第1段の実像を形成し、上記結像レンズによ
つて比較的大きく拡大、投射する視野法では、対
物レンズ3の励磁が極めて弱いか又はゼロである
から、球面収差係数Cs、色収差係数Ccは上記第
1段目の中間レンズ5の各収差係数Cs、Ccにほ
ぼ等しくなる。そして、これらの収差係数Cs、
Ccの値は、レンズの形状にもよるが、概して試
料2面と第1段目の中間レンズ5との間の距離が
大きいほど大きくなる。例えば加速電圧100キロ
ボルト級の高分解能電子顕微鏡における試料2と
第1段目の中間レンズ5との間の距離は100乃至
200ミリメートルであり、Csは数メートル乃至数
十メートル、Ccは200ミリメートル乃至500ミリ
メートルである。これらの収差による像質の低下
は、数十倍程度の倍率で像観察を行う際には大し
て問題とはならないが、二千倍程度の倍率で像観
察をする場合には特に色収差による像質低下が問
題となる。
However, all of the imaging methods adopted in the conventional electron microscopes described above make it possible to obtain a wide-field image with relatively little projection image distortion and peripheral blur, but they do not sufficiently suppress spherical aberration and chromatic aberration. The problem was that it could not be made smaller.
That is, as shown in FIG. 1 and FIG. In the field of view method, in which a real image of the stage is formed, relatively greatly enlarged and projected by the imaging lens, the excitation of the objective lens 3 is extremely weak or zero, so the spherical aberration coefficient Cs and the chromatic aberration coefficient Cc are as described above. The aberration coefficients Cs and Cc of the first stage intermediate lens 5 are approximately equal to each other. And these aberration coefficients Cs,
The value of Cc generally increases as the distance between the sample 2 surface and the first stage intermediate lens 5 increases, although it depends on the shape of the lens. For example, in a high-resolution electron microscope with an accelerating voltage of 100 kilovolts, the distance between the sample 2 and the first stage intermediate lens 5 is 100 to
200 mm, Cs is several meters to several tens of meters, and Cc is 200 mm to 500 mm. Deterioration in image quality due to these aberrations is not a big problem when observing images at a magnification of several tens of times, but when observing images at a magnification of about 2,000 times, the image quality is particularly affected by chromatic aberrations. Decrease becomes a problem.

色収差によるボケ量をζcとすると、ζcは、 ζc=M・Cc・△E/Uα ……(1) で概略的に表わすことができる。ここで、 M:倍率 Cc:色収差係数 △E:試料における非弾性散乱によるエネルギー
損失 U:加速電圧 α:試料により散乱された電子線の開き角 である。
Letting the amount of blur due to chromatic aberration be ζ c , ζ c can be roughly expressed as ζ c =M·Cc·ΔE/Uα (1). Here, M: Magnification Cc: Chromatic aberration coefficient ΔE: Energy loss due to inelastic scattering in the sample U: Accelerating voltage α: Opening angle of the electron beam scattered by the sample.

よつて、一例として、M=2000、Cc=200mm、
△E=20eV、U=100KV、α=1×10-3radとす
ると、第(1)式により ζc=80μ ……(2) となる。投影面上に設置される露出用フイルムの
分解能は、20μ程度であるので、試料2として数
百Å乃至千Åの厚さの超薄切生物片を用いた場
合、この試料2の像質は色収差によつて明らかに
低下する。
Therefore, as an example, M=2000, Cc=200mm,
If ΔE=20eV, U=100KV, and α=1×10 -3 rad, then ζ c =80μ ……(2) according to equation (1). The resolution of the exposure film placed on the projection plane is approximately 20 μm, so if an ultra-thinly sliced biological specimen with a thickness of several hundred Å to 1,000 Å is used as sample 2, the image quality of sample 2 will be It is clearly degraded by chromatic aberration.

球面収差によるボケ量は、上記数十倍乃至数千
倍の倍率では色収差によるボケ量よりも小さく、
通常問題とならないが、大きな開口を有する制限
視野絞り4を使えば投影像の像質の低下を招く恐
れがある。
The amount of blur caused by spherical aberration is smaller than the amount of blur caused by chromatic aberration at magnifications of several tens to thousands of times.
Although this is not normally a problem, if the selected area diaphragm 4 having a large aperture is used, there is a risk that the image quality of the projected image will deteriorate.

このように、従来の高分解能電子顕微鏡では、
特に千倍乃至三千倍程度の倍率において良質な像
が得られないという問題があつた。
In this way, conventional high-resolution electron microscopy
In particular, there was a problem in that high-quality images could not be obtained at magnifications of about 1,000 to 3,000 times.

本発明は、上記のような問題に着目してなされ
たもので、その目的は、対物レンズと、対物レン
ズ後方に配置された制限視野絞りと、制限視野絞
りの後方に配置された中間レンズ及び結像レンズ
と、対物レンズと制限視野絞りとの間に配設され
た設定レンズと、対物レンズの励磁をゼロか又は
極めて弱い励磁にセツトする一方、上記設定レン
ズの励磁を、試料を透過した電子線束を制限視野
絞りに集束させる値にセツトする手段とを設ける
ことによつて、試料を透過した電子線束を制限視
野絞りに集束させるようにした電子顕微鏡を提供
することにより、球面収差や色収差によるボケ量
の少ない良質な像を得られるようにし上記従来の
問題を解決することである。
The present invention has been made in view of the above-mentioned problems, and its purpose is to provide an objective lens, a selected area diaphragm placed behind the objective lens, an intermediate lens placed behind the selected area diaphragm, and an intermediate lens placed behind the selected area diaphragm. The excitation of the imaging lens, the setting lens disposed between the objective lens and the selected area diaphragm, and the objective lens are set to zero or extremely weak excitation, while the excitation of the setting lens is set to a value that is transmitted through the sample. By providing an electron microscope in which the electron beam transmitted through the sample is focused on the selected area diaphragm by providing a means for setting the electron beam to a value that causes the electron beam to be focused on the selected area diaphragm, spherical aberration and chromatic aberration can be reduced. The object of the present invention is to solve the above-mentioned conventional problems by making it possible to obtain a high-quality image with a small amount of blur caused by the image forming apparatus.

以下、本発明を添付の図面に示す実施例に基づ
いて詳細に説明する。
Hereinafter, the present invention will be described in detail based on embodiments shown in the accompanying drawings.

第3図は本発明の一実施例を示す図である。こ
の実施例に係る透過型電子顕微鏡は、対物レンズ
3と、対物レンズ3後方に配置された制限視野絞
り4と、制限視野絞り4の後方に配置された中間
レンズ5及び結像レンズ7と、対物レンズ3と制
限視野絞り4との間に配設された設定レンズ10
と、対物レンズ3の励磁をゼロか又は極めて弱い
励磁にセツトする一方、上記設定レンズ10の励
磁を、試料2を透過した電子線束を制限視野絞り
4に集束させる値にセツトする手段(図示せず)
とを備えている。対物レンズ3の前方には集束レ
ンズ1が配置されており、電子線束はこの集束レ
ンズ1において集束され試料2に照射する。数十
倍から数千倍程度の比較的倍率での拡大像を得た
い場合、対物レンズ3は励磁をゼロか又は極めて
弱い励磁に保たれる一方、設定レンズ10も所定
の励磁にセツトされ、試料2を透過した電子線束
8を制限視野絞り4へ集束させる。これにより、
制限視野絞り4を操作して試料2からの散乱電子
線の開き角を制限し、観察像のコントラストを増
加させることができる。
FIG. 3 is a diagram showing an embodiment of the present invention. The transmission electron microscope according to this embodiment includes an objective lens 3, a selected area diaphragm 4 disposed behind the objective lens 3, an intermediate lens 5 and an imaging lens 7 disposed behind the selected area diaphragm 4, Setting lens 10 arranged between objective lens 3 and selected area diaphragm 4
Then, the excitation of the objective lens 3 is set to zero or extremely weak excitation, while the excitation of the setting lens 10 is set to a value that focuses the electron beam transmitted through the sample 2 on the selected area diaphragm 4 (not shown). figure)
It is equipped with A focusing lens 1 is arranged in front of the objective lens 3, and the electron beam is focused by the focusing lens 1 and irradiated onto the sample 2. When it is desired to obtain an enlarged image at a relatively high magnification of several tens of times to several thousand times, the excitation of the objective lens 3 is maintained at zero or extremely weak excitation, while the setting lens 10 is also set to a predetermined excitation. The electron beam flux 8 that has passed through the sample 2 is focused onto the selected area aperture 4. This results in
The selected area diaphragm 4 can be operated to limit the opening angle of the scattered electron beam from the sample 2, thereby increasing the contrast of the observed image.

また、設定レンズ10と中間レンズ5とは、結
像レンズ7の物面に試料2の第1段の実像を作る
ため一組のレンズとして適当な間隔をおいて設定
されている。このため、試料2の光軸Z上の点
Xpにおいて散乱された電子線9は、先ず設定レ
ンズ10により屈曲され(対物レンズ3は励磁が
ゼロであるか又は極めて弱励磁であるから、当該
対物レンズ3における屈折は無視できる)、制限
視野絞り4によつて開き角を制限された後、中間
レンズ5により屈折されて結像レンズ7の物面6
上に第1段の実像を形成する。
Further, the setting lens 10 and the intermediate lens 5 are set as a pair of lenses at an appropriate interval in order to form a first-stage real image of the sample 2 on the object surface of the imaging lens 7. Therefore, the point on the optical axis Z of sample 2
The electron beam 9 scattered at X p is first bent by the setting lens 10 (the excitation of the objective lens 3 is zero or extremely weak, so the refraction at the objective lens 3 can be ignored), and the selected field of view is After the aperture angle is limited by the diaphragm 4, the object surface 6 of the imaging lens 7 is refracted by the intermediate lens 5.
A first-stage real image is formed on top.

このようなレンズ系における球面収差係数Cs、
および色収差係数Ccは次式によつて求められる。
The spherical aberration coefficient Cs in such a lens system,
and the chromatic aberration coefficient Cc are determined by the following equation.

Cs=e/128MoU*ZI Zp〔(3e/MoU*Bz4+8Bz′2)・y4
−8Bz2y2y′2〕dz……(3) Cc=−e/8MoU*ZI ZpBz2y2dz ……(4) ここで Zo:試料位置(光軸上における) ZI:像面位置( 〃 ) e:電子の電荷 Mo:電子の質量 U*:加速電圧(相対論補正してある) Bz:軸上磁束密度 y:Z=Zoにおいてyp=0、yp′=1をみたす電
子線の軌道である(引用文献として、Glaser、
W:Grundlagen der Elektronenoptikがあ
る)。
Cs=e/128MoU *ZI Zp [(3e/MoU * Bz 4 +8Bz′ 2 )・y 4
−8Bz 2 y 2 y′ 2 〕dz……(3) Cc=−e/8MoU *ZI Zp Bz 2 y 2 dz……(4) Here, Zo: Sample position (on the optical axis) Z I : Image plane position (〃) e: Electron charge Mo: Electron mass U * : Accelerating voltage (relativistically corrected) Bz: On-axis magnetic flux density y: At Z=Zo, y p = 0, y p ′= This is the orbit of an electron beam that satisfies 1 (cited documents include Glaser,
W: Grundlagen der Elektronenoptik).

既に述べたように、試料2の第1段の実像は設
定レンズ10と中間レンズ5とによつて結像され
るから、設定レンズ10の位置を対物レンズ3と
制限視野絞り4との間で移動させると各レンズ
5,10の励磁が変化し、(3)式及び(4)式よりCs、
Ccが変化することが明らかとなる。いま、第3
図に示す例において、試料2と中間レンズ5との
距離を100mm、中間レンズ5と第1の実像の像面
との距離を100mm、電子線束8の集束点即ち制限
視野絞り4位置と試料2との距離を80mmとして、
試料2と設定レンズ10との距離ZLに対するCs、
Ccを求めた。この場合において、設定レンズ1
0は、光軸Zに平行な電子線束が制限視野絞り4
に集束するように励磁され、また中間レンズ5は
散乱電子線9が常に第1の実像の像面に結像する
ように励磁されるものとした。また設定レンズ1
0の磁場分布の半値幅dを約9mm、中間レンズ5
の磁場の半値幅を約12mmとした。
As already mentioned, since the real image of the first stage of the sample 2 is formed by the setting lens 10 and the intermediate lens 5, the setting lens 10 is positioned between the objective lens 3 and the selected area diaphragm 4. When moved, the excitation of each lens 5, 10 changes, and from equations (3) and (4), Cs,
It becomes clear that Cc changes. Now, the third
In the example shown in the figure, the distance between the sample 2 and the intermediate lens 5 is 100 mm, the distance between the intermediate lens 5 and the image plane of the first real image is 100 mm, and the focal point of the electron beam 8, that is, the selected area aperture 4 position, and the sample 2 Assuming a distance of 80mm,
Cs for the distance Z L between the sample 2 and the setting lens 10,
I asked for Cc. In this case, setting lens 1
0 means that the electron beam parallel to the optical axis Z is the selected area aperture 4.
The intermediate lens 5 is also excited so that the scattered electron beam 9 is always focused on the image plane of the first real image. Also setting lens 1
The half width d of the magnetic field distribution at 0 is approximately 9 mm, and the intermediate lens 5
The half width of the magnetic field was set to approximately 12 mm.

このような条件の下で求めた、試料2と設定レ
ンズ10との距離ZLに対するCs、Coの値、及び
このレンズ系の倍率を第4図に示した。この図に
おいて、ZL=0は、設定レンズ10による電子線
束8の集束操作を対物レンズ3によつて行う場合
に相当し、第1図に示した従来のレンズ系と同様
な構成となる。この図から明らかになる様に、ZL
≒40mmの位置、即ち設定レンズ10を試料2と制
限視野絞り4との真中位置に設定したとき、色収
差係数CcはZL=0の場合におけるCcの1/4、すな
わち50mm程度にまで小さくすることができる。こ
のとき、色収差によるボケ量は、上記第(1)式に関
連して述べたと同様、M=2000、△E=20eV、
U=100KV、α=1×10-3radとすると、Cc=50
mmであるから、第(1)式より ζc=M・Cc・△E/Uα=20μ ……(5) となり、上記第(2)式における結果と比較して像質
が大幅に改善させていることがわかる。
FIG. 4 shows the values of Cs and Co with respect to the distance Z L between the sample 2 and the setting lens 10, and the magnification of this lens system, which were determined under these conditions. In this figure, Z L =0 corresponds to the case where the focusing operation of the electron beam 8 by the setting lens 10 is performed by the objective lens 3, and the configuration is similar to that of the conventional lens system shown in FIG. As is clear from this figure, Z L
When the setting lens 10 is set at a position of ≒40 mm, that is, the middle position between the sample 2 and the selected area aperture 4, the chromatic aberration coefficient Cc is reduced to 1/4 of Cc when Z L = 0, that is, about 50 mm. be able to. At this time, the amount of blur due to chromatic aberration is M = 2000, △E = 20eV, as described in relation to equation (1) above.
If U=100KV, α=1×10 -3 rad, Cc=50
mm, so from Equation (1), ζ c = M・Cc・△E/Uα=20μ...(5), and the image quality is significantly improved compared to the result in Equation (2) above. It can be seen that

さらに、球面収差係数Cgについても、ZL≒40
mmにおけるCsはZL=0におけるCsの1/10以下に
することができ、また倍率も2.5倍程度増すこと
が明らかになる。なお、第4図においてはZL=0
からZL=45mmまでの範囲におけるCs、Cs、及び
Mag(倍率)の変化を示したが、ZL>45mmにおい
ては、制限視野絞り4位置に電子線束8を集束さ
せ、且つ結像レンズ7の該設定物面位置6に第1
段の実像を作ることができなくなるため、ZL>45
mmの範囲は示してない。
Furthermore, regarding the spherical aberration coefficient Cg, Z L ≒ 40
It is clear that Cs at mm can be made 1/10 or less of Cs at Z L =0, and the magnification increases by about 2.5 times. In addition, in Fig. 4, Z L =0
Cs , Cs, and
Although the change in Mag (magnification) is shown, when Z L > 45 mm, the electron beam flux 8 is focused at the selected area aperture 4 position, and the first one is focused at the set object plane position 6 of the imaging lens 7.
Since it is no longer possible to create a real image of the step, Z L > 45
Range in mm is not shown.

また、第4図に示したCs、Cc等の変化は対物
レンズ3の励磁をゼロにした場合の変化である
が、対物レンズ3を極めて弱励磁にし、この弱励
磁された対物レンズ3と設定レンズ10とによ
り、電子線束8を制限視野絞り4に収束させた
上、試料2より散乱された電子線9を結像レンズ
7の物面6に第1段の実像として結像させること
もできる。かかるレンズ系の構成の下でZL=40mm
とし、対物レンズ3と設定レンズ10との励磁に
組合わせを変えれば、このレンズ系における倍率
を1倍乃至2.5倍に変化させることができる。
Also, the changes in Cs, Cc, etc. shown in Figure 4 are the changes when the excitation of the objective lens 3 is set to zero, but the objective lens 3 is made extremely weakly excited, and the objective lens 3 is set with this weakly excited objective lens 3. In addition to converging the electron beam 8 on the selected area diaphragm 4 using the lens 10, it is also possible to image the electron beam 9 scattered from the sample 2 on the object surface 6 of the imaging lens 7 as a first-stage real image. . Under the configuration of such a lens system Z L = 40mm
By changing the combination of the excitation of the objective lens 3 and the setting lens 10, the magnification of this lens system can be changed from 1 to 2.5 times.

試料を通過した電子線束を制限視野絞りに集束
するようにしたため、制限視野絞りの操作によつ
て像のコントラストを増加させることが出来る
上、対物レンズと設定レンズとで構成したレンズ
系における軸上収差、とりわけ色収差を小さくす
ることができ、ボケが少ない良質の低倍像を得る
ことができる等の効果が得られる。
Since the electron beam passing through the sample is focused on the selected area diaphragm, it is possible to increase the contrast of the image by operating the selected area diaphragm. Aberrations, especially chromatic aberrations, can be reduced, and a high-quality, low-magnification image with little blur can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、対物レンズを極めて弱励磁にして、
試料を透過した電子線束を制限視野絞りに収束す
るようにした従来の低倍率結像法を示す図であ
る。第2図は、対物レンズの励磁をゼロにして、
集束レンズによつて電子線束を制限視野絞りに集
束するようにした、従来の他の低倍率結像法を示
す図である。第3図は、対物レンズと制限視野絞
りとの間に設定レンズを配置し、両レンズによつ
て電子線束を制限視野絞りに集束するようにし
た、本発明の電子顕微鏡のレンズ構成を示す図で
ある。第4図は、本発明の電子顕微鏡において、
試料に対して設定レンズの配置場所を変えた時の
球面収差係数、色収差係数、及び倍率の変化を示
すグラフ図である。 1……集束レンズ、2……試料、3……対物レ
ンズ、4……制限視野絞り、5……中間レンズ、
6……第1段の実像、7……結像レンズ、8……
試料を透過した電子線束、9……試料により散乱
された電子線、10……設定レンズ。
Figure 1 shows the objective lens being extremely weakly excited.
FIG. 2 is a diagram showing a conventional low-magnification imaging method in which an electron beam transmitted through a sample is focused on a selected area diaphragm. In Figure 2, the excitation of the objective lens is set to zero,
FIG. 3 is a diagram illustrating another conventional low magnification imaging method in which a focusing lens focuses an electron beam onto a selected area diaphragm. FIG. 3 is a diagram showing the lens configuration of the electron microscope of the present invention, in which a setting lens is arranged between the objective lens and the selected area diaphragm, and both lenses focus the electron beam onto the selected area diaphragm. It is. FIG. 4 shows that in the electron microscope of the present invention,
FIG. 3 is a graph diagram showing changes in spherical aberration coefficient, chromatic aberration coefficient, and magnification when the placement location of a set lens is changed with respect to a sample. 1... Focusing lens, 2... Sample, 3... Objective lens, 4... Selected area diaphragm, 5... Intermediate lens,
6... First stage real image, 7... Imaging lens, 8...
Electron beam flux transmitted through the sample, 9...Electron beam scattered by the sample, 10... Setting lens.

Claims (1)

【特許請求の範囲】[Claims] 1 対物レンズと、対物レンズ後方に配置された
制限視野絞りと、制限視野絞りの後方に配置され
た中間レンズ及び結像レンズと、対物レンズと制
限視野絞りとの間に配設された設定レンズと、対
物レンズの励磁をゼロか又は極めて弱い励磁にセ
ツトする一方、上記設定レンズの励磁を、試料を
透過した電子線束を制限視野絞りに集束させる値
にセツトする手段と、から成る透過型電子顕微
鏡。
1. An objective lens, a selected area diaphragm placed behind the objective lens, an intermediate lens and an imaging lens placed behind the selected area diaphragm, and a setting lens placed between the objective lens and the selected area diaphragm. and a means for setting the excitation of the objective lens to zero or very weak excitation, while setting the excitation of the setting lens to a value that focuses the electron beam transmitted through the sample on the selected area aperture. microscope.
JP56025459A 1981-02-25 1981-02-25 Transmission-type electron microscope Granted JPS57141851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56025459A JPS57141851A (en) 1981-02-25 1981-02-25 Transmission-type electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56025459A JPS57141851A (en) 1981-02-25 1981-02-25 Transmission-type electron microscope

Publications (2)

Publication Number Publication Date
JPS57141851A JPS57141851A (en) 1982-09-02
JPH0234142B2 true JPH0234142B2 (en) 1990-08-01

Family

ID=12166606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56025459A Granted JPS57141851A (en) 1981-02-25 1981-02-25 Transmission-type electron microscope

Country Status (1)

Country Link
JP (1) JPS57141851A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57212755A (en) * 1981-06-25 1982-12-27 Internatl Precision Inc Transmission-type electron microscope
JPS6113540A (en) * 1984-06-28 1986-01-21 Internatl Precision Inc Electron microscope

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029187A (en) * 1983-07-26 1985-02-14 アカベ・オブ・スウエ−デン・アクチボラグ Method for guiding clothing to sewing machine and automatic sewing machine

Also Published As

Publication number Publication date
JPS57141851A (en) 1982-09-02

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