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JPH0234915B2 - - Google Patents
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JPH0234915B2 - - Google Patents

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Publication number
JPH0234915B2
JPH0234915B2 JP60123614A JP12361485A JPH0234915B2 JP H0234915 B2 JPH0234915 B2 JP H0234915B2 JP 60123614 A JP60123614 A JP 60123614A JP 12361485 A JP12361485 A JP 12361485A JP H0234915 B2 JPH0234915 B2 JP H0234915B2
Authority
JP
Japan
Prior art keywords
crucible
magnetic flux
melt
single crystal
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60123614A
Other languages
Japanese (ja)
Other versions
JPS61286294A (en
Inventor
Hideki Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP12361485A priority Critical patent/JPS61286294A/en
Publication of JPS61286294A publication Critical patent/JPS61286294A/en
Publication of JPH0234915B2 publication Critical patent/JPH0234915B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体単結晶をCZ(チヨクラルスキ
ー)法により引上げる際、融液に磁界を印加す
る、単結晶引上装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a single crystal pulling apparatus that applies a magnetic field to a melt when pulling a semiconductor single crystal using the CZ (Cyochralski) method.

〔技術的背景とその問題点〕[Technical background and problems]

チヨクラルスキー法により単結晶を引上げる際
に、水平方向の静磁界を印加し、熱対流を抑える
事により融液の温度が安定し、又ルツボからの汚
染が減少し、単結晶の品質が改善される事が最近
実証されている。
When pulling a single crystal using the Czyochralski method, a horizontal static magnetic field is applied to suppress thermal convection, which stabilizes the temperature of the melt, reduces contamination from the crucible, and improves the quality of the single crystal. Improvements have recently been demonstrated.

従来の磁界印加単結晶引上装置は、断面図を第
7図に示すごとく、常電導コイル1a,1bと1
a,1b間をつなぐ磁路を構成する鉄心2よりな
る直流電磁石とにより構成され引上機のチヤンバ
ー3の内部にあるルツボ4内の原料融液5に直流
磁界を加えるものである。この装置において、コ
イル1a,1bを直流励磁する事により第7図に
示すごとく鉄心2の両端にはN極とS極の磁極が
生じ、磁極内には点線矢印10で示す磁束が生ず
る。ルツボ4内での磁束密度の均一性は鉄心が有
る為、漏れ磁束が少なく、磁束均一度は5%以下
と、かなり均一になつている(但し、ここで言う
均一度とはBmax−Bmin/Bmin×100とする)。
The conventional magnetic field application single crystal pulling apparatus has normally conducting coils 1a, 1b and 1, as shown in the cross-sectional view in FIG.
It applies a DC magnetic field to the raw material melt 5 in the crucible 4 inside the chamber 3 of the pulling machine. In this device, by DC exciting the coils 1a and 1b, N and S magnetic poles are generated at both ends of the iron core 2, as shown in FIG. 7, and a magnetic flux as indicated by the dotted arrow 10 is generated within the magnetic poles. The uniformity of the magnetic flux density inside the crucible 4 is due to the presence of the iron core, so there is little leakage magnetic flux, and the magnetic flux uniformity is 5% or less, which is quite uniform. Bmin x 100).

従来の考え方ではルツボ内融液の温度の均一性
を保つには磁束密度も均一に保たねばならぬとの
見地より、磁界印加装置としては磁界の均一性を
指向し、鉄心入りの大口径の電磁石より構成され
ていた。第8図は鉄心入り電磁石の磁束分布を解
析した例である(図では電磁石の左半分のみを示
す)。ここでは鉄心間空間距離480mm、鉄心径500
mm、鉄心2の中心位置に置かれたルツボ径150mm
として、ルツボ内部の磁束均一度4.8%を示す例
である(有限要素法による解析)。ここに例を示
すごとく磁束の均一度を確保する為には対象とす
るルツボより充分に大きな径を有するコイルが必
要であると共に漏れ磁束を小さくする為鉄心を必
要とする。
The conventional thinking is that in order to maintain the uniformity of the temperature of the melt in the crucible, the magnetic flux density must also be maintained uniformly. It was composed of electromagnets. Figure 8 is an example of analyzing the magnetic flux distribution of an electromagnet with an iron core (only the left half of the electromagnet is shown in the figure). Here, the space distance between iron cores is 480 mm, and the iron core diameter is 500 mm.
mm, crucible diameter 150 mm placed at the center of iron core 2
This is an example showing a magnetic flux uniformity of 4.8% inside the crucible (analysis using the finite element method). As shown in the example here, in order to ensure the uniformity of magnetic flux, a coil having a diameter sufficiently larger than that of the target crucible is required, and an iron core is required to reduce leakage magnetic flux.

従つて電磁石としては寸法も大きく、重量も重
く、引上機への取付、あるいは操作性に問題が生
じている。特にシリコン単結晶等では単結晶の径
も大きく引上機も大きい為、極間空間を900mm以
上取らねばならぬ場合もあり、この場合必要とす
る磁束密度を3000〜4000ガウスとすると、これを
実現する電磁石としては重量30トンを超す、巨大
なものとなつてしまう。
Therefore, as an electromagnet, it is large in size and heavy, and there are problems in attaching it to a pulling machine and in operability. In particular, in the case of silicon single crystals, etc., the diameter of the single crystal is large and the pulling machine is also large, so it may be necessary to provide a space between poles of 900 mm or more. The resulting electromagnet would be huge, weighing over 30 tons.

単結晶原料融液に磁界を加える事の効果は、磁
界の方向に対し直交して運動する導体(ここでは
融液流)に対し、レンツの法則による制動力が生
ずると言う原理に基づくものである。
The effect of applying a magnetic field to a single-crystal raw material melt is based on the principle that a braking force is generated according to Lenz's law on a conductor (melt flow in this case) moving perpendicular to the direction of the magnetic field. be.

単結晶原料5は第7図に示すごとくルツボ4内
に入れられ外周に設置されたヒータ7の電熱によ
り融解される。ヒータにより加熱される事により
融液には熱対流が生じる。
As shown in FIG. 7, the single crystal raw material 5 is placed in a crucible 4 and melted by electric heat from a heater 7 installed on the outer periphery. Heat convection occurs in the melt as it is heated by the heater.

熱対流は一般に流体の熱膨張による浮力と流体
の粘性力との釣合が破れた時に生ずる。この浮力
と粘性力の釣合い関係を表す無次元量がグラスホ
フ数NGrである NGr=g・α・ΔT・R3/ν3 ……(1) ここでg ;重力加速度 α ;融液の熱膨張率 ΔT;温度差 R ;ルツボ半径 ν ;融液の動粘性係数 一般に、グラスホフ数NGrが融液の幾何学的寸
法、熱的境界条件等によつて決定される臨界値を
越えると融液内に熱対流が発生する。通常、NGr
>105にて融液の熱対流は乱流状態、NGr>109
は撹乱状態となる。
Thermal convection generally occurs when the balance between the buoyant force due to thermal expansion of the fluid and the viscous force of the fluid is broken. The dimensionless quantity that expresses the balance between the buoyant force and the viscous force is the Grashof number N Gr . Thermal expansion coefficient ΔT; Temperature difference R; Crucible radius ν; Kinematic viscosity coefficient of the melt Generally, when the Grashof number N Gr exceeds a critical value determined by the geometric dimensions of the melt, thermal boundary conditions, etc. Heat convection occurs within the melt. Usually N Gr
When N Gr >10 5 , the thermal convection of the melt becomes turbulent, and when N Gr >10 9 , it becomes turbulent.

現在行なわれている直径3インチ以上の単結晶
引上げの融液条件ではNGr>109となり融液内は撹
乱状態となり(第2図に示すごとく)端結晶近傍
すなわち固液界面境界層52は激しく波立つた状
態となる。
Under the current melt conditions for pulling single crystals with a diameter of 3 inches or more, N Gr >10 9 and the inside of the melt is in a disturbed state (as shown in Figure 2), and the solid-liquid interface boundary layer 52 near the end crystals is The state becomes violently turbulent.

この様な撹乱状態の熱対流が存在すると、融液
内、特に固液界面での温度変動が激しくなり、成
長中の結晶の微視的再溶解が顕著となり成長した
単結晶中には転位ループ、積層欠陥等が発生す
る。
When such disturbed thermal convection exists, the temperature fluctuations within the melt, especially at the solid-liquid interface, become severe, and the microscopic re-dissolution of the growing crystal becomes significant, causing dislocation loops in the growing single crystal. , stacking faults, etc. occur.

また、第3図に示すごとく、大きな流れの熱対
流51も生じルツボ内壁に於いて、融液とルツボ
との化学変化により、ルツボ内壁より融液中に溶
解する不純物が熱対流51に搬送され融液内に拡
散し、単結晶中に欠陥を生じさせると共に単結晶
の品質を劣化させる。
In addition, as shown in FIG. 3, a large flow of thermal convection 51 also occurs at the crucible inner wall, and due to chemical changes between the melt and the crucible, impurities dissolved in the melt are transported from the crucible inner wall to the thermal convection 51. It diffuses into the melt, causing defects in the single crystal and deteriorating the quality of the single crystal.

単結晶の融液は一般的に電気伝導度σの導電体
であり、磁界に直角方向に運動している流体には
単位体積当りfなる制動力が働く。
A single-crystal melt is generally a conductor with an electrical conductivity σ, and a braking force of f per unit volume acts on a fluid moving in a direction perpendicular to a magnetic field.

f=K・σ・VR・B2 Z ……(2) ここでK ;定数 σ ;融液の電気伝導度 VR;磁束と直角方向の流速成分 BZ;磁束密度 磁界による制動力は流速VRに比例する為、先
に述べた撹乱状態の熱対流による激しく波先つた
状態は1000ガウス程度の比較的低い磁束密度で抑
えられるがルツボ壁よりの不純物を搬送、拡散す
る熱対流51は比較的ゆつくりした流れである
為、数千ガウスと言う比較的大きな磁束密度を必
要とする。
f=K・σ・V R・B 2 Z ...(2) where K ; Constant σ ; Electrical conductivity of the melt V R ; Flow velocity component in the direction perpendicular to the magnetic flux B Z ; Magnetic flux density The braking force due to the magnetic field is Because it is proportional to the flow velocity V R , the violent wave tip state caused by the thermal convection in the disturbed state mentioned earlier can be suppressed with a relatively low magnetic flux density of about 1000 Gauss, but the thermal convection that transports and diffuses impurities from the crucible wall51 Since the flow is relatively slow, a relatively large magnetic flux density of several thousand Gauss is required.

従来の考え方では撹乱状態より生ずる熱振動の
抑制と共にルツボ壁よりの不純物の汚染も抑える
には数千ガウスの比較的大きな磁界をルツボ内の
融液全体に均一に加える事が要求された。
Conventional thinking required that a relatively large magnetic field of several thousand gauss be uniformly applied to the entire melt in the crucible in order to suppress thermal vibrations caused by disturbed conditions as well as impurity contamination from the crucible wall.

この様に均一な磁界を得る電磁石は、先に説明
したごとく、非常に寸法の大きなものになり、重
量も重く、引上装置への取付、操作性に問題があ
つた。
As described above, an electromagnet that produces a uniform magnetic field in this manner is extremely large in size and heavy, and there are problems in attaching it to a pulling device and in its operability.

〔発明の目的〕[Purpose of the invention]

本発明は、これらの問題に鑑みなされたもの
で、電磁石を小型軽量化する為、鉄心を使わず、
超電導化した単結晶引上げ用磁界印加装置を提供
するものである。
The present invention was made in view of these problems, and in order to make the electromagnet smaller and lighter, it does not use an iron core.
The present invention provides a magnetic field application device for pulling a superconducting single crystal.

〔発明の概要〕[Summary of the invention]

本発明は電磁石を超電導化し小型軽量化を計
り、操作性を良くする事に加え、鉄心無しとする
事により、磁束分布に差を持たせるものである。
ルツボ中心の磁束密度BCに対する、ルツボ壁部
での磁束密度BAを高くし、流速一定の条件にお
いて、磁界による制動力の比K=(Ba/Bc)2を1.5〜 3.5とするような磁束分布を得る超電導電磁石と
して、そのコイル有効半径をa、コイル間距離を
bとして、a,bの関係において0.8b>a>0.3b
とするものである。
The present invention aims to make the electromagnet superconducting to make it smaller and lighter, improve operability, and also provide a difference in magnetic flux distribution by eliminating an iron core.
A magnetic flux distribution in which the magnetic flux density BA at the crucible wall is increased relative to the magnetic flux density BC at the center of the crucible, and the ratio of braking force due to the magnetic field K = (Ba/Bc) 2 is 1.5 to 3.5 under conditions of constant flow velocity. As a superconducting electromagnet, the effective radius of the coil is a, the distance between the coils is b, and the relationship between a and b is 0.8b>a>0.3b.
That is.

〔実施例〕〔Example〕

第1図は本発明の一実施例を示したもので、こ
の実施例は、超電導電磁石及び励磁電源装置(図
示省略)より成り立つている。超電導電磁石はク
ライオスタツトと呼ばれる極低温容器11に液体
ヘリウムを満たし中に超電導コイル12を納めて
いる。超電導マグネツトの詳細構造あるいは引上
機への取付機構等については本発明と直接関係し
ないので省略する。超電導線は電気抵抗が零であ
る為、細い線で大電流が流せる事から小型でも、
鉄心無しに高い磁界が得られる電磁石が実現でき
る。
FIG. 1 shows an embodiment of the present invention, which is comprised of a superconducting electromagnet and an excitation power supply (not shown). A superconducting electromagnet consists of a cryogenic container 11 called a cryostat filled with liquid helium and containing a superconducting coil 12. The detailed structure of the superconducting magnet, the mechanism for attaching it to the pulling machine, etc. are not directly related to the present invention and will therefore be omitted. Superconducting wire has zero electrical resistance, so a large current can flow through a thin wire, so even if it is small,
An electromagnet that can obtain a high magnetic field without an iron core can be realized.

鉄心が有る場合には、鉄心は比透磁率が空間に
比べ大きく、鉄心中の磁束密度はほぼ一定と見な
せる為、磁極面での磁束分布も、ほぼ均一とな
り、磁極間の磁束分布も均一となる。これに対し
第1図のごとく、鉄心無しの2つのコイルを配置
した場合には、各空間位置において磁束密度は変
化する。各位置での磁束密度はアンペア周回積分
にて求められるが、例えばコイルの同軸上の中心
より距離Zだけ離れた位置での磁束密度BZは、 BZ=μ0a2I/2 〔1/{a2+(b+z)2}3/2 +1/{a2+(b−z)2}3/2〕 ……(3) で与えられる。
When there is an iron core, the relative magnetic permeability of the iron core is larger than that of space, and the magnetic flux density in the iron core can be considered to be almost constant, so the magnetic flux distribution on the magnetic pole surface is also almost uniform, and the magnetic flux distribution between the magnetic poles is also uniform. Become. On the other hand, when two coils without iron cores are arranged as shown in FIG. 1, the magnetic flux density changes at each spatial position. The magnetic flux density at each position can be found by ampere circuit integration. For example, the magnetic flux density B Z at a position a distance Z away from the coaxial center of the coil is B Z = μ 0 a 2 I/2 [1 / {a 2 + (b + z) 2 } 3/2 + 1/{a 2 + (b - z) 2 } 3/2] ...(3) It is given as follows.

ここでμ0;透磁率(=4π×10-7) a ;コイル有効半径 2b;コイル間距離 I ;アンペア・ターン Z ;コイル間中心よりの軸上距離 第1図のグラフに示すごとく(3)式で示す磁束密
度BZは中心より外周に行く程高くなる。又制動
力fは(2)式に示すごとく、流速VRを一定とする
とfαB2 Zであり同様に外周に行く程大きくなる。
Here, μ 0 ; Magnetic permeability (=4π×10 -7 ) a ; Coil effective radius 2b ; Inter-coil distance I ; Ampere-turn Z ; On-axis distance from the center of the coils As shown in the graph in Figure 1 (3 ) The magnetic flux density B Z shown by the formula increases from the center to the outer periphery. Further, as shown in equation (2), the braking force f is fαB 2 Z when the flow velocity V R is constant, and similarly increases toward the outer circumference.

第2図は第1図の制動力のグラフを詳細計算し
たものである。具体例として6インチ(152mm)
〜8インチ(203mm)の単結晶引上装置の場合、
ルツボ径は400mm程度となり引上装置のチヤンバ
ー外径は900mm弱となる。従つてコイル間距離と
しては1040mm(b=540mm)とし、コイル有効半
径aを変えた時の距離に対する制動力比(中心点
C点を1とし基準化している、 K=(Ba/Bc)2)を示す。第2図によるとa= 0.3bの時ルツボ壁位置A点での制動力比K=3.55
となり、a=0.8bの場合はK=1.58となる。
FIG. 2 is a detailed calculation of the braking force graph in FIG. 1. As a specific example, 6 inches (152mm)
For ~8 inch (203 mm) single crystal pulling equipment,
The diameter of the crucible will be approximately 400mm, and the outer diameter of the chamber of the pulling device will be slightly less than 900mm. Therefore, the distance between the coils is 1040 mm (b = 540 mm), and the braking force ratio to the distance when changing the coil effective radius a (standardized with the center point C as 1, K = (Ba / Bc) 2 ) is shown. According to Figure 2, when a = 0.3b, the braking force ratio K = 3.55 at the crucible wall position A point.
Therefore, when a=0.8b, K=1.58.

単結晶のサイズが小さい場合には、ヒータ等の
厚みが単結晶サイズとはあまり比例しない事もあ
り、単結晶サイズに比べ、コイル間距離を大きく
せねばならぬという傾向にはあるがコイル間距離
とルツボ径との比は大体1:0.2〜0.4程度とな
り、ほぼ第2図に計算条件にて代表できる。従つ
てC点に対するA点での制動力比Kを1.5〜3.5に
する為には電磁石としてコイル間距離2bに対す
るコイル有効半径として、 0.8b>a>0.3b とすれば良い事になる。
When the size of the single crystal is small, the thickness of the heater etc. may not be very proportional to the size of the single crystal, so there is a tendency for the distance between the coils to be larger compared to the size of the single crystal. The ratio of the distance to the crucible diameter is approximately 1:0.2 to 0.4, which can be roughly represented by the calculation conditions shown in Figure 2. Therefore, in order to make the braking force ratio K at point A to point C 1.5 to 3.5, the effective radius of the coil for the distance 2b between the coils as an electromagnet should be 0.8b>a>0.3b.

制動力をA点(ルツボ壁)でC点の1.5〜3.5倍
とする事にて均一な磁束分布の場合に比べ、より
効果がある事は実験にて得られた結果であるがシ
ミユレーシヨン解析の結果等よりみて次の通りと
考えられる。
Experiments have shown that setting the braking force at point A (crucible wall) to 1.5 to 3.5 times that at point C is more effective than in the case of uniform magnetic flux distribution. Judging from the results, etc., the following can be considered.

即ち第3図に示すごとく単結晶原料5はヒータ
7にて側面より熱せられ融解される。ルツボ内融
液の温度を均一にするには熱伝導による熱の伝達
と、対流撹拌による熱伝達とがあるが、対流等に
よる撹拌を抑えた場合には、熱の伝達は熱伝導の
みによる事になり充分では無く、周辺部と中心部
では数十度に及ぶ大きな温度差が付いてしまう。
That is, as shown in FIG. 3, the single crystal raw material 5 is heated from the side by the heater 7 and melted. To make the temperature of the melt in the crucible uniform, there are two ways to transfer heat: heat transfer by thermal conduction and heat transfer by convection stirring, but if stirring by convection etc. is suppressed, heat transfer can only be carried out by heat conduction. This is not sufficient, and there is a large temperature difference of several tens of degrees between the periphery and the center.

従つて安定しかつ均一な温度勾配を得る為には
充分な熱伝達がなされる必要があり、従来行なわ
れている通り結晶を回転させる事により融液を撹
拌する必要がある。
Therefore, in order to obtain a stable and uniform temperature gradient, sufficient heat transfer is required, and it is necessary to stir the melt by rotating the crystal, as is conventionally done.

第4図に、結晶を回転させた時の融液の流れを
有限要素法にて解析した例を示す。第4図はルツ
ボ及び単結晶の断面図右半分を示し、矢印はその
断面内での流線を示している。回転方向の流速は
結晶外周部付近を最大とし、同心円状の帯状の流
れの束となる。第4図では界面付近の流れは同心
円状の流れとなつているが、下部はルツボ壁の影
響にて渦、即ち径方向の流れ成分が生じているの
が認められる。
FIG. 4 shows an example in which the flow of melt when the crystal is rotated is analyzed using the finite element method. FIG. 4 shows the right half of the cross-sectional view of the crucible and single crystal, and the arrows indicate streamlines within the cross-section. The flow velocity in the rotational direction is maximum near the outer periphery of the crystal, forming a bundle of concentric belt-shaped flows. In FIG. 4, the flow near the interface is a concentric flow, but it can be seen that a vortex, ie, a radial flow component, is generated in the lower part due to the influence of the crucible wall.

融液に磁界を加えた場合、磁束の方向と直交す
る成分の流れに上記(2)式に示す制動力が加わり、
直交成分は流れにくくなる。従つて水平磁界の場
合には上下方向の流れは流れにくくなり、第4図
の下部に認められる様な径方向の渦流はできにく
く、全体が上部の様な多くの同心円帯状の流れと
なる。
When a magnetic field is applied to the melt, the braking force shown in equation (2) above is applied to the flow of the component perpendicular to the direction of the magnetic flux,
The orthogonal component becomes difficult to flow. Therefore, in the case of a horizontal magnetic field, the flow in the vertical direction becomes difficult, and the radial eddy current as seen in the lower part of FIG. 4 is difficult to form, and the entire flow becomes many concentric band-shaped flows as shown in the upper part.

第5図bはグラフはルツボの径方向の場所にお
ける回転流速を示すものであり、ここに示すごと
く、結晶回転にて撹拌すると、多くの同心円帯状
の流れ55となり、個々の流れの帯には速度に違
いがある為、ルツボ壁より与えられる熱は径方向
の流れがなくとも、各帯ごとに良好に熱交換され
て中央部にまで伝わり、安定した熱勾配となる。
また同心円状の流れが持続される限り第3図の5
1のごとき径方向へ向う渦、即ち対流は生じず、
ルツボ壁にて汚染された部分の融液が結晶近くへ
移送される事もなく、不純物の少ない単結晶が得
られる。但し水平磁界の場合には第5図bの平面
図で見るごとく回転流55は磁束10と直交する
部分(コイル側)と磁束10と平行する部分(コ
イル面と直角な方向)とがある。直交する部分で
は回転流に制動力が加わるが、平行する部分では
制動力が加わらないという部分的な不平衡性があ
る。しかし、融液には慣性があるため、全体とし
ては同心円状の流れを保つている。また回転流5
5は第6図に示すごとく回転している結晶の縁部
を最大に、ルツボ壁部へ向かうに従つて小さくな
つていく。この流速が径方向で異る事が熱伝達に
重要な意味を持つ。(60は磁界をかけない時の
回転流速分布を示すものである。) 上記(2)式に示すごとく制動力fは流速VRに比
例する為、第6図に示すごとく速い流速部には大
きな制動力が加わり均一な磁界をかけた場合、磁
束をかけない場合の流速分布60に比べ61のご
とく均一化されてしまう。同心円状の流速に差が
ある事により、熱交換が行なわれ、安定した温度
勾配となる所、流速差が無くなれば熱伝達が悪く
なり、安定した温度勾配が得られなくなる。
The graph in Figure 5b shows the rotational flow velocity at a location in the radial direction of the crucible, and as shown here, when stirred by crystal rotation, many concentric band-shaped flows 55 are formed, and each flow band has a Because of the difference in speed, the heat given from the crucible wall is well exchanged in each band and transmitted to the center even without radial flow, creating a stable thermal gradient.
Also, as long as the concentric flow continues, 5 in Figure 3
1, no radial vortex or convection occurs,
The melt from the contaminated portion of the crucible wall is not transferred to the vicinity of the crystal, and a single crystal with few impurities can be obtained. However, in the case of a horizontal magnetic field, as seen in the plan view of FIG. 5b, the rotating flow 55 has a part perpendicular to the magnetic flux 10 (on the coil side) and a part parallel to the magnetic flux 10 (in a direction perpendicular to the coil surface). A braking force is applied to the rotating flow in the orthogonal parts, but no braking force is applied in the parallel parts, which is a partial imbalance. However, since the melt has inertia, it maintains a concentric flow as a whole. Also, rotational flow 5
5 is maximum at the edge of the rotating crystal as shown in FIG. 6, and becomes smaller toward the crucible wall. The fact that this flow velocity differs in the radial direction has important implications for heat transfer. (60 indicates the rotational flow velocity distribution when no magnetic field is applied.) As shown in equation (2) above, the braking force f is proportional to the flow velocity V R , so in the high flow velocity section as shown in Figure 6, When a large braking force is applied and a uniform magnetic field is applied, the flow velocity distribution becomes uniform as shown in 61 compared to 60 when no magnetic flux is applied. Due to the difference in flow velocity in the concentric circles, heat exchange is performed and a stable temperature gradient is obtained. However, if the flow velocity difference disappears, heat transfer deteriorates and a stable temperature gradient cannot be obtained.

本発明のごとく磁束密度に差を持たせると、半
径方向の制動力が中心に行くほど弱くなるため、
61のごとく同心円状に流速に差を持たせ安定に
熱交換が行えるのである。
When the magnetic flux density is made different as in the present invention, the braking force in the radial direction becomes weaker toward the center.
As shown in 61, stable heat exchange can be performed by creating a difference in flow velocity in concentric circles.

磁界を加える事の効果は先に述べた様に凝固界
面付近の熱撹乱を抑える事と、対流による径方向
の動きを抑制しルツボ壁よりの汚染を少なくする
事にある。熱撹乱を抑えるには1000ガウス程度の
比較的低い磁束密度で良いが、ゆつくりした流れ
となる対流を抑えるには3000〜4000ガウスと言う
比較的大きな磁束密度を必要とする。ここで問題
とする対流とは第5図に示す様なルツボ壁の汚染
された融液を結晶が成育される中心部付近まで流
れる、大きな流路であり、全体に磁束を加えなく
とも、流路の一部を止める事にて、流れを止める
事ができる。従つて第1図あるいは第2図に示す
ごとく磁束密度を変えて中心部を弱めても対流を
止める事ができ、かつ第6図に示す通り、均一な
磁界を加えた場合の流速分布曲線61に比べ磁束
分布をルツボ壁部に比べ中心部を弱くしていくと
いう変化を持たせた場合の流速分布曲線62は同
心円状に流速差が付く為良好な熱交換が維持でき
良好な熱勾配が得られる。
As mentioned above, the effect of applying a magnetic field is to suppress thermal disturbance near the solidification interface and to suppress radial movement due to convection, thereby reducing contamination from the crucible wall. A relatively low magnetic flux density of about 1000 Gauss is sufficient to suppress thermal disturbances, but a relatively large magnetic flux density of 3000 to 4000 Gauss is required to suppress slow convection. The convection in question here is a large flow path that allows the contaminated melt on the crucible wall to flow to the vicinity of the center where crystals grow, as shown in Figure 5. The flow can be stopped by blocking part of the road. Therefore, as shown in Fig. 1 or 2, convection can be stopped even if the magnetic flux density is changed to weaken the center, and as shown in Fig. 6, the flow velocity distribution curve 61 when a uniform magnetic field is applied. Compared to , the flow velocity distribution curve 62 when the magnetic flux distribution is changed by making the center part weaker than the crucible wall part has a concentric flow velocity difference, so good heat exchange can be maintained and a good thermal gradient can be obtained. can get.

良好な結果を得る磁束分布としては実験及び解
析の結果第2図に示すごとく中心位置に対するル
ツボ壁位置での制動力比として1.5〜3.5倍(磁束
分布としては1.24〜1.88倍)を得た。
As a result of experiments and analysis, as shown in FIG. 2, the magnetic flux distribution that yields good results yields a braking force ratio of 1.5 to 3.5 times at the crucible wall position relative to the center position (1.24 to 1.88 times the magnetic flux distribution).

以上のごとく本発明に係る引上装置は従来装置
に比べコンパクトとなり、取り扱いが容易とな
る。さらに本発明に係る引上装置を用いる事によ
り欠陥の少ない高品質の単結晶を得る事ができ
る。
As described above, the lifting device according to the present invention is more compact than conventional devices and is easier to handle. Furthermore, by using the pulling apparatus according to the present invention, a high quality single crystal with few defects can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る単結晶引上装置およびそ
の磁界分布の説明図、第2図は同装置におけるル
ツボ内の制動力特性図、第3図は同ルツボ内の融
液の状態説明図、第4図は単結晶を回転させ撹拌
したときのルツボ内融液の流れ解析結果を示す
図、第5図a,bは熱対流、回転流と水平磁界と
の関係を示す図、第6図は単結晶を回転させ撹拌
したときのルツボ径方向の流速分布を示す図、第
7図は従来の単結晶引上装置の説明図、第8図は
同装置のルツボ内融液状態の説明図である。 1a,1b…常電導コイル、2…鉄心、3…引
上機チヤンバ、4…ルツボ、5…単結晶原料融
液、6…単結晶、7…ヒータ、10…磁束、11
…クライオスタツト、12…超電導コイル、51
…熱対流、52…固液界面境界層、55…撹拌回
転流、60…回転流速分布(無磁界)、61…回
転流速分布(均一磁界)、62…回転流速分布
(本発明の磁界)、a…コイル有効半径、2b…コ
イル間距離、BZ…磁束密度、f…制動力、A点
…ルツボ壁位置、C点…ルツボ中心位置、BA
A点での磁束密度、BC…C点での磁束密度。
Fig. 1 is an explanatory diagram of the single crystal pulling device according to the present invention and its magnetic field distribution, Fig. 2 is a diagram of braking force characteristics in the crucible in the same device, and Fig. 3 is an explanatory diagram of the state of the melt in the crucible. , Figure 4 is a diagram showing the flow analysis results of the melt in the crucible when a single crystal is rotated and stirred, Figures 5 a and b are diagrams showing the relationship between thermal convection, rotational flow, and horizontal magnetic field, and Figure 6 is a diagram showing the relationship between thermal convection, rotational flow, and horizontal magnetic field. The figure shows the flow velocity distribution in the radial direction of the crucible when a single crystal is rotated and stirred, Figure 7 is an explanatory diagram of a conventional single crystal pulling device, and Figure 8 is an explanation of the state of the melt inside the crucible of the same device. It is a diagram. 1a, 1b... Normal conducting coil, 2... Iron core, 3... Pulling machine chamber, 4... Crucible, 5... Single crystal raw material melt, 6... Single crystal, 7... Heater, 10... Magnetic flux, 11
... Cryostat, 12 ... Superconducting coil, 51
... Thermal convection, 52... Solid-liquid interface boundary layer, 55... Stirring rotational flow, 60... Rotational flow velocity distribution (no magnetic field), 61... Rotational flow velocity distribution (uniform magnetic field), 62... Rotational flow velocity distribution (magnetic field of the present invention), a... Coil effective radius, 2b... Distance between coils, B Z ... Magnetic flux density, f... Braking force, Point A... Crucible wall position, C point... Crucible center position, B A ...
Magnetic flux density at point A, B C ...magnetic flux density at point C.

Claims (1)

【特許請求の範囲】 1 ルツボ内に収容した半導体単結晶融液に電磁
石により水平磁界を与えて制動を行ないつつ前記
ルツボから単結晶の引上げを行なう装置におい
て、 前記電磁石は、コイル有効半径をa、コイル間
距離を2bとしたときに0.8b>a>0.3bとなる超電
導電磁石である単結晶引上装置。
[Scope of Claims] 1. An apparatus for pulling a single crystal from a crucible while braking a semiconductor single crystal melt housed in a crucible by applying a horizontal magnetic field using an electromagnet, wherein the electromagnet has a coil effective radius of a. , a single crystal pulling device which is a superconducting electromagnet with 0.8b>a>0.3b when the distance between coils is 2b.
JP12361485A 1985-06-07 1985-06-07 Pulling device for single crystal Granted JPS61286294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12361485A JPS61286294A (en) 1985-06-07 1985-06-07 Pulling device for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12361485A JPS61286294A (en) 1985-06-07 1985-06-07 Pulling device for single crystal

Publications (2)

Publication Number Publication Date
JPS61286294A JPS61286294A (en) 1986-12-16
JPH0234915B2 true JPH0234915B2 (en) 1990-08-07

Family

ID=14864953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12361485A Granted JPS61286294A (en) 1985-06-07 1985-06-07 Pulling device for single crystal

Country Status (1)

Country Link
JP (1) JPS61286294A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0471214U (en) * 1990-11-01 1992-06-24

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2561072B2 (en) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 Single crystal growth method and apparatus
JP2556967B2 (en) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 Single crystal growing equipment
JP2572070B2 (en) * 1987-07-20 1997-01-16 東芝セラミツクス株式会社 Single crystal manufacturing method
JP2025097779A (en) * 2023-12-19 2025-07-01 株式会社Sumco Single crystal production method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203793A (en) * 1983-05-07 1984-11-17 Agency Of Ind Science & Technol Preparation of semiinsulative ga-as single crystal
JPS6081086A (en) * 1983-10-07 1985-05-09 Shin Etsu Handotai Co Ltd Process and apparatus for growing single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0471214U (en) * 1990-11-01 1992-06-24

Also Published As

Publication number Publication date
JPS61286294A (en) 1986-12-16

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