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JPH0237545B2 - HIKARINYORUDENKAI * JIKAISOKUTEIKI - Google Patents
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JPH0237545B2 - HIKARINYORUDENKAI * JIKAISOKUTEIKI - Google Patents

HIKARINYORUDENKAI * JIKAISOKUTEIKI

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Publication number
JPH0237545B2
JPH0237545B2 JP56198219A JP19821981A JPH0237545B2 JP H0237545 B2 JPH0237545 B2 JP H0237545B2 JP 56198219 A JP56198219 A JP 56198219A JP 19821981 A JP19821981 A JP 19821981A JP H0237545 B2 JPH0237545 B2 JP H0237545B2
Authority
JP
Japan
Prior art keywords
light
magnetic field
electric field
measuring
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56198219A
Other languages
Japanese (ja)
Other versions
JPS5899761A (en
Inventor
Koji Tada
Miki Kuhara
Masami Tatsumi
Tsutomu Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56198219A priority Critical patent/JPH0237545B2/en
Publication of JPS5899761A publication Critical patent/JPS5899761A/en
Publication of JPH0237545B2 publication Critical patent/JPH0237545B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/24Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は光を使つて電界、磁界もしくは電流を
非接触で測定するものであり、さらに詳しくはポ
ツケルス効果を用いて電界を測定し、フアラデー
効果を用いて磁界もしくはそれを発生させる電流
を測定するものである。 光による電界磁界測定器は光フアイバを伝送路
として用いることにより高電圧、大電力の送電線
に対しても軽便かつ安全な測定手段を提供するも
のである。 従来光を用いて電界、磁界を測定する場合、ポ
ツケルス効果を有するLiNbO3、LiTaO3、ADP、
KDPを用いて電界を測定し、フアラデー効果を
有する鉛ガラス等を用いて磁界すなわち電流を測
定する方法が用いられてきた。このため測定器の
中心を成すセンサ部に異なる材料を用い、別々に
構成する必要があり、また空間の同一点の電界、
磁界を同時に測定することもできなかつた。さら
にセンサ部の材料が2種いるため測定器として高
価になるという欠点もあつた。 本発明はこのような従来の測定方法の欠点を無
くし、さらに特性が改善された電界磁界測定器を
提供するものである。 以下本発明について説明する。 本発明は、従来用いられて来た材料がそれぞれ
ポツケルス効果かフアラデー効果かいずれか一方
しか顕著な効果として持つていないのに対して、
これらの両効果を有しかつそれぞれの効果特性が
従来の材料のものより優れてるという画期的なビ
スマスシリコンオキサイド(Bi12SiO20)もしく
はビスマス・ゲルマニウム・オキサイド
(Bi12GeO20)(以下それぞれBSO、BGOと略記
する)を用いて単一のセンサ部で電界と磁界を同
時に測定するものである。 以下にその動作原理と構成例を示す。 図1、図2はそれぞれポツケルス効果による電
界測定とフアラデー効果による磁界測定の原理を
示すものである。 図1において、入射した光1(たとえばHe−
Neレーザ光や発光ダイオード等の光)を検光子
2で直線偏光としλ/4波長板3を通して円偏光
とし、BSOもしくはBGOの単結晶4(この例で
は(100)板)を通つた後、その光学軸(図中の
x、y軸)と45゜を成す方位に設定された検光子
5を通す。この配置を電界6を E=Eo sinwt (1) で厚みdの単結晶板に垂直に印加すると、ポツケ
ルス効果により光は位相変調を受け、検光子を出
た光7の強度は Io≒Ii/2(1+πEd/Vπ) (2) で与えられることは良く知られている。ここでIi
は入射光強度であり、Vπは半波長電圧であり、
たとえば633mm光に対してBSOで3900volts、
BGOで5600voltsである。 従つて(2)式で表わされる光強度を光検出器(ホ
トダイオード等)で検知し、第2項の交流分Ed
=Eod sinwtを取り出せば電界に比例した電気信
号が得られる。 以上は電界と光の進行方向が平行な縦型素子で
あるが電界と光の進行方向が直行する横型でも同
じ測定が可能であることは勿論である。 図2において、入射光8を偏光子9で直線偏光
とし、長さlのフアラデー効果を有する材料(鉛
ガラス等)10を通過した後、偏光子と45゜の方
位角を成す検光子11を通す。今単結晶に外部磁
界12 H=Ho sinwt (3) が光の進行方向と平行に印加されると、単結晶を
透過した光はフアラデー効果により θ=Vel Ho sinwt (4) だけ偏光方向が回転する。従つて検光子を出たあ
との光13の強度Poは Po≒1/2Pi(1−2θ) =1/2Pi(1−2Vel Ho sinwt) (5) となり、交流分を光検出器より取り出せば磁界
Hoに比例した電気信号を得ることができる。
BSO、BGOはこのようなフアラデー効果を有す
るため送電線下に設置することにより電流を測定
できる。 本発明はBSO、BGOの以上の2つの効果を有
することを利用して電界磁界測定器を構成するも
のである。以下の構成例に示すように、本発明
は、結晶の各面方位と光の進行方向を適切に選定
することにより電界を測定する光はポツケルス効
果のみを磁界を測定する光はフアラデー効果のみ
を受けるように設定してあり、光源としてはHe
−Neレーザ光、発光ダイオードや半導体レーザ
の光等を用いており、光の伝送路としては空間も
しくは光フアイバ等を適用しており、また結晶へ
の光の導入方法としては通常のレンズ、ロツドレ
ンズ等で平行光束にして入射させることが光損失
を少くする上で望ましい。 以下に本発明のいくつかの構成例について説明
するが、本発明はこれら記載例に限定されるもの
ではない。なおここで各図において記号は図1、
図2と同一のものを示す。 構成例 1 図3は<100>方向に透過する光で電界を検出
し(縦型)ポツケルス効果を全く受けない<010
>もしくは<001>方向に透過する光で磁界を検
出するものである。ここで各方位は代表的なもの
を示し<100>、<010>、<001>は互に互換性が
有る。これは以下の例においても同様である。 構成例 2 図4は(構成例1)をさらに高感度化するため
に結晶端面に反射膜14を設けたものであり、反
射回数は必要とする感度に対して決定される。も
ちろん電界、磁界のどちらか一方だけを反射型に
することも可能である。 このように反射型にすることは高感度化の他に
BSO、BGOの有する旋光能による角度のずれを
打ち消すためにも有用である。 構成例 3 図5は入力光束を1本とし、偏光プリズム2で
紙面に平行な成分と直角な成分に分割し、これら
をプリズムミラー15で反射させ前者で電界を、
後者で磁界をそれぞれ測定することにより、たと
えば光フアイバで入射光を伝送した場合、構成例
1、2よりも光フアイバ及びロツドレンズ等の結
合系が1式不要となり、3本のフアイバで済むと
いうコスト上の利点を有する。 構成例 4 図6は電界が<110>方向に印加され、これと
直角の方向<110>に進む光によつて電界を検出
する(横型)のものである。この時磁界を測定す
る光はポツケルス効果を全く受けない<001>方
向に透過する。簡単化のため偏検光子、λ/4板は
図示していない。この方式においても(構成例
2)と同じく少なくとも1方の光が結晶中を往復
させることは可能であり、かつ同様の結果を持
つ。 構成例 5 図7は(構成例4)において入射光を1光束と
したものであり(構成例3)と同じ効果を有す
る。 構成例 6 図8は(構成例1及び構成例4)が4式の光フ
アイバと結合系を必要とするのに対して2式の光
フアイバと結合系で済むものであり、低価格化、
小型化に有用である。 すなわち光源を2波長とし(たとえば発光ダイ
オードの830mm光と870mm光)光フアイバで導び
き、分波器16で分光して1波長で電界を残る1
波長で磁界を測定し各々に最適な角度に設定され
た検光子5,11を通つて合波器17で合波され
1本のフアイバーで導びかれた受光器側へ戻る。
受光器側で再度分波した後それぞれ光検出器によ
つて電気信号となる。 次に本発明の一つの具体的実施例として図4に
示す構成例2に示す場合について述べる。 図4においてBSOの(100)板を偏検光プリズ
ムλ/4波長板及び反射層を付加し、マルチモード
光フアイバとロツドレンズにより光の入射出部の
結合を行つた。用いた光の波長は発光ダイオード
の870nm光である。実験用送電線下に配置し電
界と磁界すなわち電流の測定を行つたところ電界
の検出値は電流値に影響されず、電流の測定値は
送電線の印加電圧すなわち電界に影響されないこ
とが明らかとなつた。 他の構成例でBGOを用いた場合も同様であり、
他の構成例においても本発明の特徴は同様に確認
された。 以上述べた如く、本発明の光による電界、磁界
測定器によれば (1) 単一のセンサ部に構成することが出来るので
高価なセンサ部が低価格になる、電界、磁界と
センサ部のアライメントが一度ですむ、空間中
の同一点の電界磁界が測定できる、使用法もセ
ンサ部が1個であるため簡便である等の特長を
有する。 (2) さらにBSO、BGOを用いることは次のよう
な利点がある。 まず電界測定器としては、LiNbO3
LiTaO3のような自然複屈折を持たないため
温度補償せずに安定な測定ができるし、
ADP、KDPのような潮解性のない安定な材
料であるため特別な密閉等が必要ないという
利点をもつ。 さらに磁界測定器としては鉛ガラスと同じ
く温度依存性がほとんどない上に、鉛ガラス
の約2倍のベルデ定数(Ve=0.2min/Oe・
cm、波長λ=633nm)を持ち高感度でかつ
単結晶材料であるため光吸収損が少いという
利点を有する。
The present invention uses light to measure electric fields, magnetic fields, or currents in a non-contact manner.More specifically, the electric field is measured using the Pockels effect, and the magnetic field or the current that generates it is measured using the Faraday effect. It is something. Optical electric and magnetic field measuring instruments use optical fibers as transmission lines to provide a convenient and safe means of measuring even high-voltage, high-power transmission lines. When measuring electric and magnetic fields using conventional light, LiNbO 3 , LiTaO 3 , ADP, which have the Pockels effect,
A method has been used in which the electric field is measured using KDP and the magnetic field, that is, the current, is measured using lead glass or the like that has a Faraday effect. For this reason, it is necessary to use different materials and configure the sensor part, which forms the center of the measuring instrument, separately, and the electric field at the same point in space,
It was also not possible to measure the magnetic field at the same time. Furthermore, since there are two types of materials for the sensor part, there is also the disadvantage that the measuring device is expensive. The present invention eliminates the drawbacks of such conventional measuring methods and provides an electromagnetic field measuring instrument with further improved characteristics. The present invention will be explained below. In contrast to the conventionally used materials, which have only one of the Pockels effect and the Faraday effect, the present invention has the following advantages:
Bismuth silicon oxide (Bi 12 SiO 20 ) or bismuth germanium oxide (Bi 12 GeO 20 ) (hereinafter respectively BSO (abbreviated as BGO) is used to simultaneously measure electric and magnetic fields with a single sensor unit. The operating principle and configuration example are shown below. FIGS. 1 and 2 show the principles of electric field measurement using the Pockels effect and magnetic field measurement using the Faraday effect, respectively. In FIG. 1, incident light 1 (for example, He-
Ne laser light, light from a light emitting diode, etc.) is linearly polarized by an analyzer 2, circularly polarized by a λ/4 wavelength plate 3, and passed through a BSO or BGO single crystal 4 ((100) plate in this example). It passes through an analyzer 5 set at an angle of 45 degrees with the optical axis (x, y axes in the figure). When an electric field 6 of this arrangement is applied perpendicularly to a single crystal plate of thickness d with E=Eo sinwt (1), the light undergoes phase modulation due to the Pockels effect, and the intensity of light 7 exiting the analyzer becomes Io≒Ii/ It is well known that it is given by 2(1+πEd/Vπ) (2). Here Ii
is the incident light intensity, Vπ is the half-wave voltage,
For example, 3900volts with BSO for 633mm light,
BGO is 5600volts. Therefore, the light intensity expressed by equation (2) is detected by a photodetector (photodiode, etc.), and the AC component of the second term Ed
If we extract = Eod sinwt, we can obtain an electric signal proportional to the electric field. Although the above is a vertical element in which the electric field and light travel directions are parallel, it goes without saying that the same measurement is possible with a horizontal element in which the electric field and light travel directions are perpendicular. In FIG. 2, incident light 8 is converted into linearly polarized light by a polarizer 9, and after passing through a material 10 having a Faraday effect (such as lead glass) having a length l, an analyzer 11 forming an azimuth angle of 45° with the polarizer is used. Pass. Now, when an external magnetic field 12H=Ho sinwt (3) is applied to the single crystal parallel to the direction of light propagation, the polarization direction of the light transmitted through the single crystal is rotated by θ=Vel Ho sinwt (4) due to the Faraday effect. do. Therefore, the intensity Po of the light 13 after leaving the analyzer is Po≒1/2Pi (1-2θ) = 1/2Pi (1-2Vel Ho sinwt) (5), and if the AC component is extracted from the photodetector, then magnetic field
An electrical signal proportional to Ho can be obtained.
Since BSO and BGO have such Faraday effects, current can be measured by installing them under power transmission lines. The present invention utilizes the above-mentioned two effects of BSO and BGO to construct an electric field measuring device. As shown in the configuration example below, in the present invention, by appropriately selecting each plane orientation of the crystal and the traveling direction of the light, the light for measuring the electric field can only detect the Pockels effect, and the light for measuring the magnetic field can only detect the Faraday effect. The light source is He.
-Ne laser light, light from a light emitting diode or semiconductor laser, etc. are used, and the light transmission path is space or an optical fiber, and the method for introducing light into the crystal is a normal lens or rod lens. In order to reduce optical loss, it is desirable to input the light into a parallel light beam. Some configuration examples of the present invention will be described below, but the present invention is not limited to these described examples. In addition, the symbols in each figure are as shown in Figure 1,
The same thing as FIG. 2 is shown. Configuration example 1 Figure 3 shows an electric field detected by light transmitted in the <100> direction (vertical type), which is not affected by the Pockels effect at all <010
The magnetic field is detected using light transmitted in the > or <001> direction. Here, each direction is representative, and <100>, <010>, and <001> are mutually compatible. This also applies to the following examples. Configuration Example 2 FIG. 4 shows a configuration in which a reflective film 14 is provided on the end face of the crystal in order to further increase the sensitivity of (Configuration Example 1), and the number of reflections is determined based on the required sensitivity. Of course, it is also possible to make only either the electric field or the magnetic field reflective. In addition to increasing sensitivity, making it reflective like this
It is also useful for canceling the angular deviation due to the optical rotation power of BSO and BGO. Configuration Example 3 In FIG. 5, the input light beam is one beam, which is divided by the polarizing prism 2 into a component parallel to the plane of the paper and a component perpendicular to the plane of the paper, and these are reflected by the prism mirror 15, and the electric field is
By measuring each magnetic field with the latter, for example, if the incident light is transmitted using an optical fiber, one set of coupling system such as an optical fiber and a rod lens is not required compared to configuration examples 1 and 2, and the cost is reduced to 3 fibers. It has the above advantages. Configuration Example 4 In FIG. 6, an electric field is applied in the <110> direction, and the electric field is detected by light traveling in the <110> direction perpendicular to this (horizontal type). At this time, the light used to measure the magnetic field is transmitted in the <001> direction, which is not affected by the Pockels effect at all. For simplicity, the polarized analyzer and λ/4 plate are not shown. In this method, as in (Configuration Example 2), it is possible for at least one light to travel back and forth in the crystal, and the same result is obtained. Configuration Example 5 FIG. 7 shows a configuration in which the incident light is one beam in (Configuration Example 4), and has the same effect as (Configuration Example 3). Configuration Example 6 In Fig. 8, (Configuration Examples 1 and 4) require 4 optical fibers and a coupling system, only 2 optical fibers and a coupling system are required, resulting in lower cost,
Useful for miniaturization. In other words, a light source with two wavelengths (for example, 830 mm light and 870 mm light from a light emitting diode) is guided through an optical fiber, and the light is separated by a demultiplexer 16, leaving an electric field at one wavelength.
The magnetic field is measured in terms of wavelength, passes through analyzers 5 and 11 set at optimal angles, is combined by a multiplexer 17, and returns to the light receiver guided by a single fiber.
After being demultiplexed again on the receiver side, each signal is turned into an electric signal by a photodetector. Next, a case shown in Configuration Example 2 shown in FIG. 4 will be described as one specific embodiment of the present invention. In Fig. 4, a BSO (100) plate is added with a polarizing polarizing prism, a λ/4 wavelength plate, and a reflective layer, and the light input and output parts are coupled using a multimode optical fiber and a rod lens. The wavelength of the light used was 870 nm light from a light emitting diode. When we placed it under an experimental power transmission line and measured the electric and magnetic fields, i.e., current, it became clear that the detected electric field value was not affected by the current value, and the measured current value was not affected by the applied voltage of the transmission line, that is, the electric field. Summer. The same is true when using BGO in other configuration examples,
The features of the present invention were similarly confirmed in other configuration examples. As described above, according to the optical electric field/magnetic field measuring device of the present invention, (1) it can be configured into a single sensor section, so the expensive sensor section can be reduced in price; It has the advantages of requiring only one alignment, being able to measure the electric and magnetic fields at the same point in space, and being easy to use as it only requires one sensor unit. (2) Furthermore, using BSO and BGO has the following advantages. First, as an electric field measuring device, LiNbO 3 ,
It does not have natural birefringence like LiTaO 3 , so stable measurements can be made without temperature compensation.
Since it is a stable material that does not have deliquescent properties like ADP and KDP, it has the advantage of not requiring special sealing. Furthermore, as a magnetic field measuring device, it has almost no temperature dependence like lead glass, and has a Verdet constant (Ve = 0.2 min/Oe・
cm, wavelength λ = 633 nm), it has high sensitivity, and because it is a single crystal material, it has the advantage of low light absorption loss.

【図面の簡単な説明】[Brief explanation of drawings]

図1は電界測定の原理図、図2は磁界測定の原
理図、図3、図4、図5、図6、図7、図8は本
発明の測定器の構成例を示す為の図である。 図中1,8……入射光、2,9……偏光子、3
……λ/4波長板、4,10……BSOもしくは
BGO単結晶、5,11……検光子、6……電界、
7,13……出射光、12……磁界、14……光
反射層、15……プリズムミラー、16……分波
器、17……合波器、E……電界、H……磁界。
Figure 1 is a diagram showing the principle of electric field measurement, Figure 2 is a diagram showing the principle of magnetic field measurement, and Figures 3, 4, 5, 6, 7, and 8 are diagrams showing configuration examples of the measuring instrument of the present invention. be. In the figure, 1, 8...incident light, 2,9...polarizer, 3
...λ/4 wavelength plate, 4,10...BSO or
BGO single crystal, 5, 11... analyzer, 6... electric field,
7, 13... Emitted light, 12... Magnetic field, 14... Light reflection layer, 15... Prism mirror, 16... Demultiplexer, 17... Multiplexer, E... Electric field, H... Magnetic field.

Claims (1)

【特許請求の範囲】 1 互いに直交する電界と磁界が存在する空間
に、ポツケルス効果とフアラデー効果を共に有す
る光学材料を、該電界方向に対して該光学材料の
縦型ポツケルス効果が最大となる方向に配置し、
電界を測定する光を電界と同一方向に進行させて
該光学材料中を透過させ、かつ、磁界を測定する
光を磁界と同一方向に進行させて該光学材料中を
透過させるか、または、該光学材料を該電界方向
に対して該光学材料の横型ポツケルス効果が最大
となる方向に配置し、電界を測定する光を電界・
磁界と直交する方向に進行させて該光学材料中を
透過させ、かつ、磁界を測定する光を磁界と同一
方向に進行させて該光学材料中を透過させること
により、光によつて電界・磁界を同時に測定する
ことを特徴とする光による電界・磁界測定器。 2 前記光学材料がビスマスシリコンオキサイド
(Bi12SiO20)又はビスマス・ゲルマニウム・オキ
サイド(Bi12GeO20)であることを特徴とする特
許請求の範囲第1項記載の光による電界、磁界測
定器。 3 前記Bi12SiO20又はBi12GeO20の<100>方向
を電界方向と平行に、かつ、<010>方向又は<
001>方向が磁界方向と平行になるように配置し、
電界を測定する光が電界方向と同一方向に進行
し、磁界を測定する光が磁界方向と同一方向に進
行するようにしたことを特徴とする特許請求範囲
第1項記載の光による電界磁界測定器。 4 前記Bi12SiO20又はBi12GeO20の<110>方向
を電界方向と平行に、かつ、<001>方向が磁界方
向と平行になるように配置し、電界を測定する光
が<T10>方向に進行し、磁界を測定する光が<
001>方向に進行するようにしたことを特徴とす
る特許請求の範囲第1項記載の光による電界・磁
界測定器。 5 入射光を偏光ビームスプリツターで2つの互
に直交する偏光成分に分割しその一方で電界を、
残る一方で磁界を測定することを特徴とする特許
請求の範囲第1項乃至特許請求の範囲第4項記載
の光による電界磁界測定器。 6 入射光が2つの異なる波長の光より成り、こ
れを光分波器で分光して一方の波長光で電界を、
残る一方の波長光で磁界を測定することを特徴と
する特許請求の範囲第1項乃至特許請求の範囲第
4項記載の光による電界、磁界測定器。
[Claims] 1. An optical material having both a Pockels effect and a Faraday effect is placed in a space where electric and magnetic fields perpendicular to each other exist in a direction in which the vertical Pockels effect of the optical material is maximum with respect to the direction of the electric field. Place it in
The light for measuring the electric field is made to travel in the same direction as the electric field and transmitted through the optical material, and the light for measuring the magnetic field is made to travel in the same direction as the magnetic field and transmitted through the optical material, or The optical material is placed in the direction where the lateral Pockels effect of the optical material is maximized with respect to the direction of the electric field, and the light for measuring the electric field is directed to the direction of the electric field.
Electric and magnetic fields are generated by light by traveling in the direction perpendicular to the magnetic field and transmitting through the optical material, and by transmitting light for measuring the magnetic field in the same direction as the magnetic field and transmitting through the optical material. An optical electric field/magnetic field measuring device that measures simultaneously. 2. The optical electric field and magnetic field measuring instrument according to claim 1, wherein the optical material is bismuth silicon oxide (Bi 12 SiO 20 ) or bismuth germanium oxide (Bi 12 GeO 20 ). 3 The <100> direction of Bi 12 SiO 20 or Bi 12 GeO 20 is parallel to the electric field direction, and the <010> direction or <
001> Arranged so that the direction is parallel to the magnetic field direction,
Electric and magnetic field measurement using light according to claim 1, characterized in that the light for measuring the electric field travels in the same direction as the direction of the electric field, and the light for measuring the magnetic field travels in the same direction as the direction of the magnetic field. vessel. 4 Arrange the Bi 12 SiO 20 or Bi 12 GeO 20 so that the <110> direction is parallel to the electric field direction and the <001> direction is parallel to the magnetic field direction, and the light for measuring the electric field is <T10> The light that travels in the direction and measures the magnetic field is <
001> The electric field/magnetic field measuring instrument using light according to claim 1, characterized in that the light travels in the direction. 5 The incident light is split into two mutually orthogonal polarization components by a polarizing beam splitter, while the electric field is
The optical electric field/magnetic field measuring instrument according to any one of claims 1 to 4, characterized in that it measures a magnetic field while remaining. 6 The incident light consists of two different wavelengths, which are separated by an optical demultiplexer and the electric field is created by one wavelength.
An optical electric field/magnetic field measuring instrument according to claims 1 to 4, characterized in that the magnetic field is measured using light of one of the remaining wavelengths.
JP56198219A 1981-12-08 1981-12-08 HIKARINYORUDENKAI * JIKAISOKUTEIKI Expired - Lifetime JPH0237545B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56198219A JPH0237545B2 (en) 1981-12-08 1981-12-08 HIKARINYORUDENKAI * JIKAISOKUTEIKI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56198219A JPH0237545B2 (en) 1981-12-08 1981-12-08 HIKARINYORUDENKAI * JIKAISOKUTEIKI

Publications (2)

Publication Number Publication Date
JPS5899761A JPS5899761A (en) 1983-06-14
JPH0237545B2 true JPH0237545B2 (en) 1990-08-24

Family

ID=16387476

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0237545B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0670651B2 (en) * 1988-07-09 1994-09-07 日本碍子株式会社 Method and device for measuring electric and magnetic quantities by light
IT1248820B (en) * 1990-05-25 1995-01-30 Pirelli Cavi Spa FIELD DIRECTIONAL POLARIMETRIC SENSOR
EP1099117B1 (en) * 1998-07-23 2002-05-29 Siemens Aktiengesellschaft Method and device for measuring an electric voltage using the pockels effect
JP2007315894A (en) * 2006-05-25 2007-12-06 Ntt Docomo Inc Electric field measuring device

Also Published As

Publication number Publication date
JPS5899761A (en) 1983-06-14

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