JPH0241583B2 - - Google Patents
Info
- Publication number
- JPH0241583B2 JPH0241583B2 JP12748585A JP12748585A JPH0241583B2 JP H0241583 B2 JPH0241583 B2 JP H0241583B2 JP 12748585 A JP12748585 A JP 12748585A JP 12748585 A JP12748585 A JP 12748585A JP H0241583 B2 JPH0241583 B2 JP H0241583B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- discharge
- target
- members
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は放電電極に係り、特にスパツタリング
等蒸発源を飛散させるための放電電極に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a discharge electrode, and particularly to a discharge electrode for scattering evaporation sources such as sputtering.
従来、スパツタリング等に用いられターゲツト
等の蒸発源を被処理物に飛散させるための放電電
極には、種々のものが適用されているが、通常、
例えば同心円状にマグネツトを配置しこのマグネ
ツトの上面に平板状ターゲツトを配置するように
したものが用いられている。このような放電電極
は、この電極と被処理物との間に高周波電圧を印
加し、プラズマ放電を発生させることにより、上
記蒸発源の材料を飛散させて被処理物に膜を形成
するものである。
Conventionally, various types of discharge electrodes have been used for sputtering, etc., to scatter evaporation sources such as targets onto the workpiece, but usually,
For example, a magnet is used in which magnets are arranged concentrically and a flat target is arranged on the upper surface of the magnet. Such a discharge electrode applies a high-frequency voltage between the electrode and the object to be processed to generate plasma discharge, thereby scattering the evaporation source material and forming a film on the object to be processed. be.
しかし、上記電極においては、部分的にプラズ
マが発生するため、蒸発源の飛散個所が均一では
なく、均一な膜形成を行なうことが困難であつ
た。 However, in the above-mentioned electrode, since plasma is generated locally, the evaporation source is scattered at uneven locations, making it difficult to form a uniform film.
また、従来、上記マグネツトを偏心回転させて
プラズマの発生部分を移動させるようにしたもの
もあるが、完全に均一な蒸発源の飛散を確保する
ことができないという問題があつた。 Furthermore, in the past, there has been a method in which the magnet is eccentrically rotated to move the plasma generating part, but there is a problem in that it is not possible to ensure completely uniform scattering of the evaporation source.
本発明は上記した点に鑑みてなされたもので、
均一なプラズマ放電を発生させることのできる放
電電極を提供することを目的とするものである。
The present invention has been made in view of the above points, and
The object of the present invention is to provide a discharge electrode that can generate uniform plasma discharge.
上記目的を達成するため本発明の放電電極は、
放射状に発生する閉磁界内に、同心状に配設され
た少なくとも１つの環状溝部を有する電極部材を
上記磁界が上記溝部を貫通するように配設し、こ
の電極部材を同心円状にそれぞれ絶縁部材を介し
て複数配設するとともに上記各電極部材にそれぞ
れ放電電源を接続し、上記電極部材の放電電流を
それぞれ独立に制御するようにしたことをその特
徴とするものである。
In order to achieve the above object, the discharge electrode of the present invention has the following features:
An electrode member having at least one annular groove disposed concentrically in a closed magnetic field generated radially is disposed such that the magnetic field passes through the groove, and the electrode member is concentrically arranged with an insulating member. The present invention is characterized in that a plurality of electrode members are arranged through the electrode members, and a discharge power source is connected to each of the electrode members, so that the discharge current of the electrode members is independently controlled.
以下、本発明の実施例を図面を参照して説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明をスパツタリング装置に適用し
た場合の一実施例を示したもので、鉄等の磁性材
料からなる円板１の上面中心部および外周部に
は、それぞれマグネツト２，２が固着され、これ
ら各マグネツト２，２の上面側には、鉄等の磁性
材料からなるターゲツト支持部材３，３，３，３
が所定間隔を有するように同心円状に配設されて
いる。上記各ターゲツト支持部材３，３，３，３
の間隙部分には、断面形状ほぼＵ字状を有し内側
に溝４ａが形成されたの環状ターゲツト４，４，
４が、それぞれ着脱自在に嵌合されており、各タ
ーゲツト４，４，４と各ターゲツト支持部材３，
３，３，３との間には、石英等の絶縁体５，５…
が介設されている。また、上記各ターゲツト４，
４，４の下面側には、それぞれ電極６，６，６が
接続され、これら各電極６，６，６には、それぞ
れ独立した放電電源７，７，７がリード線８，
８，８を介して接続されている。さらに、上記各
ターゲツト支持部材３，３，３，３の下面側に
は、冷却装置９，９…が取付けられている。 FIG. 1 shows an embodiment in which the present invention is applied to a sputtering device, in which magnets 2, 2 are fixed to the center and outer periphery of the upper surface of a disk 1 made of a magnetic material such as iron. On the upper surface side of each of these magnets 2, 2, a target support member 3, 3, 3, 3 made of a magnetic material such as iron is provided.
are arranged concentrically at predetermined intervals. Each of the above target support members 3, 3, 3, 3
An annular target 4, 4, which has a substantially U-shaped cross section and has a groove 4a formed inside the gap, is provided in the gap.
4 are removably fitted to each other, and each target 4, 4, 4 and each target support member 3,
3, 3, 3, an insulator such as quartz 5, 5...
is interposed. In addition, each of the above targets 4,
Electrodes 6, 6, 6 are connected to the lower surfaces of 4, 4, respectively, and independent discharge power sources 7, 7, 7 are connected to lead wires 8, 6, respectively.
8,8. Furthermore, cooling devices 9, 9, . . . are attached to the lower surfaces of the respective target support members 3, 3, 3, 3.
本実施例においては上記のように構成された放
電電極を真空容器内に配置し、上記ターゲツト
４，４…に対向する位置に被処理物（図示せず）
を配置する。そして、各放電電源７，７，７から
各電極６，６，６に高周波電圧を印加することに
より、マグネツト２による中心部から上記マグネ
ツト４，４…の内部貫通するように放射状に発生
する磁界と、上記各ターゲツト４，４…の内側に
発生する電界とが直交する部分にプラズマ１０が
発生する。このプラズマ１０によりターゲツト４
の内側面材料をイオン化して被処理物に被着させ
るものである。 In this embodiment, the discharge electrode configured as described above is arranged in a vacuum container, and a workpiece (not shown) is placed at a position facing the targets 4, 4, . . .
Place. By applying a high frequency voltage to each electrode 6, 6, 6 from each discharge power source 7, 7, 7, a magnetic field is generated radially from the center of the magnet 2 to penetrate inside the magnet 4, 4... Plasma 10 is generated at a portion where the electric field and the electric field generated inside each of the targets 4, 4, . . . are perpendicular to each other. This plasma 10 causes the target 4 to
The inner surface material of the ionizer is ionized and applied to the object to be treated.
したがつて、本実施例においては、ターゲツト
４の内側に電子が閉じ込められるため、プラズマ
の放電が安定する。また、各ターゲツト４の内側
部分がそれぞれスパツタ源となるので、平面で均
一なスパツト源となり、被処理物への均一な膜形
成が可能となる。さらに、本実施例においては、
各ターゲツト４，４…にそれぞれ別個の放電電源
７，７…が接続されているので、各ターゲツト
４，４…毎に細かい放電電流の制御を行なうこと
ができ、極めて均一なスパツタ源となりうる。 Therefore, in this embodiment, the electrons are confined inside the target 4, so that the plasma discharge is stabilized. Further, since the inner portion of each target 4 serves as a sputter source, it becomes a flat and uniform spatter source, making it possible to form a uniform film on the object to be processed. Furthermore, in this example,
Since separate discharge power sources 7, 7, . . . are connected to the respective targets 4, 4, . . ., the discharge current can be finely controlled for each target 4, 4, .
また、上記各ターゲツト４，４…を異なる物質
で形成するようにすれば、各ターゲツト４，４…
の放電電力の制御により、合金物質の膜形成が可
能となる。 Furthermore, if each of the targets 4, 4... is made of different materials, each of the targets 4, 4...
By controlling the discharge power, it is possible to form a film of alloy material.
なお、上記ターゲツトを、第２図に示すよう
に、内側面にテーパを形成するようにしてもよ
く、これにより、ターゲツト材料の上方への飛散
が円滑に行なわれる。 As shown in FIG. 2, the target may be tapered on its inner surface, thereby allowing the target material to scatter upwards smoothly.
また、上記実施例においては、本発明に係る放
電電極をスパツタリング装置の放電陰極に適用し
た例を示したが、イオンエツチング等のイオン源
に適用することもできる。 Further, in the above embodiment, an example was shown in which the discharge electrode according to the present invention was applied to a discharge cathode of a sputtering device, but it can also be applied to an ion source for ion etching or the like.
以上述べたように本発明に係る放電電極は、環
状溝部を有する複数の電極部材を、それぞれ絶縁
部材を介して、同心円状にかつ放射状磁界が上記
溝部を貫通するように配設し、これら各電極部材
にそれぞれ放電電源を接続し、上記各電極部材の
放電電流をそれぞれ独立に制御するように構成し
たので、上記各電極部材への放電電流をそれぞれ
別個に制御することにより、各電極部材の内側に
均一にプラズマ放電を発生させることができ、例
えばスパツタリング装置に適用すれば、均一な面
蒸発源となり均一に膜形成を行なうことが可能と
なり、さらに、各蒸発源を異なる物質を形成すれ
ば、合金物質の膜形成もできる等の効果を奏す
る。
As described above, in the discharge electrode according to the present invention, a plurality of electrode members each having an annular groove are arranged concentrically through an insulating member so that a radial magnetic field passes through the groove, and each of these electrode members has an annular groove. Since the discharge power source is connected to each electrode member and the discharge current of each electrode member is controlled independently, the discharge current of each electrode member can be controlled separately. Plasma discharge can be generated uniformly on the inside, and if applied to a sputtering device, for example, it becomes a uniform surface evaporation source and can form a uniform film.Furthermore, if each evaporation source is made of a different material, , it is also possible to form a film of an alloy material.
第１図は本発明の一実施例を示す縦断面図、第
２図はターゲツトの他の実施例を示す縦断面図で
ある。
１…円板、２…マグネツト、３…ターゲツト支
持部材、４…ターゲツト、５…絶縁体、６…電
極、７…放電電源、８…リード線、９…冷却装
置、１０…プラズマ。
FIG. 1 is a longitudinal sectional view showing one embodiment of the present invention, and FIG. 2 is a longitudinal sectional view showing another embodiment of the target. DESCRIPTION OF SYMBOLS 1...Disk, 2...Magnet, 3...Target support member, 4...Target, 5...Insulator, 6...Electrode, 7...Discharge power source, 8...Lead wire, 9...Cooling device, 10...Plasma.
Claims (1)
された少なくとも１つの環状溝部を有する電極部
材を上記磁界が上記溝部を貫通するように配設
し、この電極部材を同心円状にそれぞれ絶縁部材
を介して複数配設するとともに上記各電極部材に
それぞれ放電電源を接続し、上記電極部材の放電
電流をそれぞれ独立に制御するようにしたことを
特徴とする放電電極。1. An electrode member having at least one annular groove disposed concentrically in a closed magnetic field generated radially is disposed so that the magnetic field passes through the groove, and the electrode member is insulated concentrically. 1. A discharge electrode, characterized in that a plurality of discharge electrodes are arranged via members, and a discharge power source is connected to each of the electrode members, so that the discharge current of the electrode members is independently controlled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (en) | 1985-06-12 | 1985-06-12 | Discharge electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (en) | 1985-06-12 | 1985-06-12 | Discharge electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61284571A JPS61284571A (en) | 1986-12-15 |
| JPH0241583B2 true JPH0241583B2 (en) | 1990-09-18 |
Family
ID=14961105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12748585A Granted JPS61284571A (en) | 1985-06-12 | 1985-06-12 | Discharge electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61284571A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2797111B2 (en) * | 1989-03-27 | 1998-09-17 | 東京エレクトロン株式会社 | Sputtering equipment |
| JP2657170B2 (en) * | 1994-10-24 | 1997-09-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP2000144399A (en) * | 1998-10-30 | 2000-05-26 | Applied Materials Inc | Sputtering equipment |
| CN107523831B (en) * | 2017-09-30 | 2019-01-18 | 江阴康强电子有限公司 | It is roughened immersion plating pilot trench |
-
1985
- 1985-06-12 JP JP12748585A patent/JPS61284571A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61284571A (en) | 1986-12-15 |
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