JPH0241586B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous sputtering device capable of continuously sputtering a substrate, and particularly to an air-to-air sputtering device.
This invention relates to a type of sputtering device.

Currently, vacuum evaporation method, ion plating method,
Problems with vapor deposition equipment such as sputtering method include:
One problem is that the inside of the vacuum chamber gets very dirty. In particular, in a sputtering device, since the attached atoms ejected from the target are non-directional, there is a possibility that the contamination within the chamber becomes particularly large. In addition, some conventional continuous sputtering devices use anti-fouling shields,
Even if the anti-fouling shield is attached, that part will be fine, but the other parts that are not shielded will still get dirty.

In view of the above points, the present invention prevents contamination of a vacuum chamber by performing spatter treatment with a cylindrical anti-adhesive shield, and also provides a structure in which a plurality of cylindrical anti-adhesive shields are combined and rotated to protect the substrate. The present invention aims to provide a continuous sputtering device capable of continuously sputtering substrates by having a function of transferring the substrate.

Embodiments of the continuous sputtering apparatus according to the present invention will be described below with reference to the drawings.

FIG. 1 shows the overall structure of a continuous sputtering device, and FIG. 2 shows the structure of a cylindrical anti-stick shield used in that case. In these figures, a rotary member 3 in which four cylindrical anti-stick shields 2 are combined in a radial manner is rotatably arranged in a vacuum chamber 1. A carry-in passage 5 for carrying in the substrate 4 is connected to one side of the vacuum chamber 1, and a carry-in passage 6 for carrying out the substrate 4 is connected to the other side. And loading path 5
A pressure adjustment chamber 8A is defined in the middle by a shutter 7, and a pressure adjustment chamber 8B is defined in the discharge path 6 by a shutter 9. The vacuum chamber 1 and the pressure adjustment chambers 8A and 8B are each vacuum-suctioned by an independent evacuation system. An inlet 10 for blowing out an inert gas such as argon is provided in the center of the vacuum chamber 1. Then, a target 11 for emitting metal atoms for forming a desired thin film is arranged at the end of each cylindrical anti-adhesion shield 2 closer to the inlet 10,
A substrate holder 12 is provided at the other end. The substrate holder 12 holds the substrate 4 carried into the vacuum chamber 1.
It has the function of holding. For example, as shown in FIG. 3, the substrate holder 12 has a notch 15 formed therein, and a leaf spring type holding member 16 that removably holds the substrate 4 is attached to the peripheral edge of the notch 15 on the outer surface of the substrate holder.
A pair is fixed. These pair of clamping members 16 removably clamp the substrate 4 on the outer surface side of the substrate holder. Note that the material of the cylindrical anti-adhesion shield 2 is preferably stainless steel or the like. Here, the substrate holder 12 is fixed to the outside of the cylindrical anti-adhesive shield 2 and rotates together with it, but the four targets 11 do not need to be fixed to the shield 2 and are placed at positions A, B, C
The shield 2 may be fixedly installed at the inner end of the shield 2 on the vacuum chamber 1 side so as to have a positional relationship as shown in FIG.

In addition, the lower center of the rotating member 3, in which four cylindrical anti-stick shields 2 are integrally joined at their inner ends, is open, and the inert gas exiting the inlet 10 flows into the lower center of the rotating member 3. It passes through the open part and enters the inside of the shield through the gap between the target 11 and the shield 2.

In addition, in the pressure adjustment chambers 8A and 8B, the substrate 4 is transferred to the substrate holder 12 on the vacuum chamber 1 side through the carry-in path 5, and the substrate on the substrate holder 12 side is transferred to the carry-in path 6.
A telescopic transfer means for carrying out the vacuum chamber 1 through the vacuum chamber 1 is provided.

In the above configuration, the pressure adjustment chamber 8 is
After the pressure adjustment chamber 8A reaches a high vacuum state comparable to that of the vacuum chamber 1, the substrate 4 supplied into the chamber A is carried into the vacuum chamber 1 by the opening/closing operation of the shutter 7, and is first placed in the position A. Substrate holder 12 for a certain cylindrical anti-corrosion shield 2
is retained. At this position A, the voltage relationship is such that the target 11 is grounded and the substrate holder 12 is negative. As a result, ion cleaning of the substrate is performed by reverse sputtering. Thereafter, the rotating member 3 rotates 90 degrees, and the substrate 4 also comes to position B accordingly. At this position B, the voltage relationship is such that the target 11 is negative and the substrate holder 12 is ground, and normal sputtering processing is performed. The sputtered substrate 4 is transferred to a discharge position at position C by rotation of the rotary member 3 through 90 degrees. Here, the substrate 4 is removed from the substrate holder 12, transferred by opening and closing the shutter 9 into a pressure adjustment chamber 8B set to a high vacuum similar to that of the vacuum chamber 1, and further taken out into the atmosphere from here. . Such operations are performed continuously and sequentially.

According to the above embodiment, the following effects can be achieved.

(1) Place the target 1 at one end of the cylindrical anti-stick shield 2.
1, a substrate holder 12 is disposed at the other end, and spatter processing is performed within this cylindrical anti-adhesion shield 2, thereby preventing the inconvenience of spatter atoms adhering to the vacuum chamber 1 and contaminating it.

(2) Since a plurality of cylindrical anti-corrosion shields 2 are combined radially to form a rotating member, the substrate 4
The substrates 4 can be sequentially rotated and transferred, and the substrate 4 can be continuously sputtered.

(3) Pressure adjustment chambers 8A,
8B, the vacuum in the vacuum chamber 1 does not have to be excessively redrawn every time a substrate is carried in and carried out, and continuous sputtering processing can be made more efficient.

In the above embodiment, a case is shown in which the spatter treatment is not performed at the position C, but it is also possible to perform the sputter treatment at the position C as necessary. It is also possible to omit the reverse sputtering at position A and perform the reverse sputtering before the vacuum chamber is brought into the chamber.

As explained above, according to the present invention, a cylindrical anti-adhesive shield is used to perform spatter treatment inside the vacuum chamber to prevent contamination, and the cylindrical anti-adhesive shield is used in combination to protect rotating members. By configuring the present invention and providing the function of transferring the substrate, it is possible to obtain a continuous sputtering device that enables continuous sputtering treatment of the substrate.

[Brief explanation of drawings]

Fig. 1 is a plan sectional view showing an embodiment of a continuous sputtering device according to the present invention, Fig. 2 is a perspective view showing the configuration of a cylindrical anti-stick shield in the embodiment, and Fig. 3 is an example of a substrate holder. FIG. 1... Vacuum chamber, 2... Cylindrical anti-stick shield, 3... Rotating member, 4... Substrate, 5... Carrying in path, 6... Carrying out path, 7, 9... Shutter, 8A, 8
B...Pressure adjustment chamber, 11...Target, 12...Substrate holder.

Claims (1)

[Claims] 1 A vacuum chamber, a pressure adjustment chamber provided in communication with the inlet and outlet sides of the vacuum chamber, and a rotary chamber arranged in the vacuum chamber with a structure in which a plurality of cylindrical anti-adhesion shields are combined in a radial manner. a target disposed on an end face on the rotation center side of each of the cylindrical anti-adhesion shields to emit atoms, and a substrate holder disposed on the other end face of each of the cylindrical anti-adhesion shields, The substrate entering the vacuum chamber from the pressure adjustment chamber on the entry side is held by the substrate holder and sputtering is performed;
A continuous sputtering device, characterized in that the rotation of the rotating member moves the rotating member to a discharge position and sends the discharge to the pressure adjustment chamber on the outlet side.