JPH0241740B2 - - Google Patents
Info
- Publication number
- JPH0241740B2 JPH0241740B2 JP8929181A JP8929181A JPH0241740B2 JP H0241740 B2 JPH0241740 B2 JP H0241740B2 JP 8929181 A JP8929181 A JP 8929181A JP 8929181 A JP8929181 A JP 8929181A JP H0241740 B2 JPH0241740 B2 JP H0241740B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- resist film
- workpiece
- pmma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、レジストを用いる微細パターン形成
方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a fine pattern forming method using a resist.
近時、１〔μｍ〕或いはサブミクロンの微細な
寸法を持つパターンを形成するものとして、電子
ビーム露光法やイオンビーム露光法等が開発され
ている。これらの方法は、被加工物上に形成した
レジスト膜に電子ビームやイオンビーム等の荷電
ビームを照射し、このビーム照射を受けたレジス
ト膜に物理的或いは化学的変化を起こさせ、この
変化の有無を利用してレジストパターン形成す
る。そして、このレジストパターンをマスクとし
てリアクテイブイオンエツチング等のドライエツ
チングを施すことにより、被加工物を所望パター
ンに微細加工するものである。 Recently, electron beam exposure methods, ion beam exposure methods, and the like have been developed to form patterns with minute dimensions of 1 [μm] or submicrons. These methods involve irradiating a resist film formed on a workpiece with a charged beam such as an electron beam or an ion beam, causing a physical or chemical change in the resist film that has been irradiated with the beam, and examining the effects of this change. A resist pattern is formed using the presence or absence. Then, by performing dry etching such as reactive ion etching using this resist pattern as a mask, the workpiece is microfabricated into a desired pattern.
しかしながら、この種の方法にあつては次のよ
うな問題があつた。すなわち、前記レジストとし
ては、従来PMMA（ポリメチルメタクリレート）
が用いられているが、このPMMAレジストでは
高感度だと解像度が悪く、高解像度だと低感度に
なる等の問題がある。特に電子ビーム用レジスト
として用いられるPMMAは解像度は0.2〔μｍ〕
以下と優秀であるが、感度が50〔μc／cm2〕以上と
非常に悪い。また、PMMAはリアテイブイオン
エツチング等のドライエツチングに対する耐性が
乏しく、これがためにドライエツチングを良好に
行い得ないと言う問題があつた。 However, this type of method has the following problems. That is, as the resist, conventional PMMA (polymethyl methacrylate)
However, this PMMA resist has problems such as poor resolution at high sensitivity and low sensitivity at high resolution. In particular, PMMA used as a resist for electron beams has a resolution of 0.2 [μm]
Although the sensitivity is excellent as below, the sensitivity is very poor as it is over 50 [μc/cm 2 ]. Furthermore, PMMA has poor resistance to dry etching such as reactive ion etching, and this has caused a problem in that dry etching cannot be performed satisfactorily.
本発明は上記事情を考慮してなされたもので、
その目的とするところは、レジストの解像度およ
び感度の向上をはかり得て、精度良い微細加工を
行い得る微細パターン形成方法を提供することに
ある。 The present invention was made in consideration of the above circumstances, and
The purpose is to provide a fine pattern forming method that can improve the resolution and sensitivity of the resist and perform fine processing with high precision.
まず、本発明の概要を説明する。本発明の骨子
はPMMAとMMAとを含むレジストを用いたこ
とにある。すなわち、本発明者等の鉛意研究によ
りMMAに紫外線を照射するとラジカルが生成さ
れることが見出された。そして、このラジカルが
PMMA鎖とMMA鎖との間に架橋反応を引き起
こす。つまりPMMAの網目構造が形成される。
この網目構造はリアクテイブイオンエツチング等
に対し従来のPMMAより２倍も耐性がある。ま
た、ビーム照射された部分とされない部分との分
子量の差が従来のPMMAよりも大きくなること
が見出された。 First, an overview of the present invention will be explained. The gist of the present invention lies in the use of a resist containing PMMA and MMA. That is, the inventors' preliminary research has found that radicals are generated when MMA is irradiated with ultraviolet rays. And this radical
Causes a cross-linking reaction between PMMA chains and MMA chains. In other words, a PMMA network structure is formed.
This network structure is twice as resistant to reactive ion etching and the like as conventional PMMA. It was also found that the difference in molecular weight between the beam irradiated part and the non-beam irradiated part was larger than that of conventional PMMA.
本発明はこのような点に着目し、被加工物上に
PMMAおよびMMAを含むレジスト膜を形成し
このレジスト膜に紫外線を照射したのち、上記レ
ジスト膜に荷電ビームで所望パターンを描画し、
その後レジスト膜を現像してレジストパターンを
形成し、しかるのちこのレジストパターンをマス
クとして前記被加工物を選択エツチングするよう
にした方法である。 The present invention focuses on these points, and the present invention
After forming a resist film containing PMMA and MMA and irradiating this resist film with ultraviolet rays, drawing a desired pattern on the resist film with a charged beam,
In this method, the resist film is then developed to form a resist pattern, and then the workpiece is selectively etched using this resist pattern as a mask.
したがつて本発明によれば、レジストの感度お
よび耐ドライエツチング性を大幅に向上すること
ができ、高精度な微細加工を行い得る等の効果を
奏する。 Therefore, according to the present invention, the sensitivity and dry etching resistance of the resist can be significantly improved, and highly accurate microfabrication can be performed.
以下、本発明の詳細を図示の実施例によつて説
明する。 Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図乃至第５図は本発明の一実施例に係わる
パターン形成工程を示す模式図である。まず、第
１図に示す如く面方位（100）、比抵抗６〜８〔Ω〕
のSi基板１の上面に熱酸化法を用いて厚さ0.5〔μ
ｍ〕の酸化膜２（被加工膜）を形成する。次い
で、この酸化膜２上に、溶媒メチルイソブチルケ
トンに３〔％〕のPMMAと５〔％〕のMMAとを
含む溶液を回転塗布し、第２図に示す如くレジス
ト膜３を形成する。そして、このレジスト膜３の
表面全面に水銀ランプで１〔Ｊ／cm2〕の紫外線を
照射する。続いて、レジスト膜３を180〔℃〕で１
時間熱処理する。 FIGS. 1 to 5 are schematic diagrams showing a pattern forming process according to an embodiment of the present invention. First, as shown in Figure 1, the surface orientation (100) and the specific resistance are 6 to 8 [Ω].
The upper surface of the Si substrate 1 is coated with a thickness of 0.5 [μ] using a thermal oxidation method.
m] oxide film 2 (film to be processed) is formed. Next, on this oxide film 2, a solution containing 3% PMMA and 5% MMA in methyl isobutyl ketone solvent is spin-coated to form a resist film 3 as shown in FIG. Then, the entire surface of this resist film 3 is irradiated with ultraviolet rays of 1 [J/cm 2 ] using a mercury lamp. Next, resist film 3 was heated to 180 [℃].
Heat treated for an hour.
次に、電子ビーム描画装置を用い加速電圧20
〔kV〕，ドーズ量10〔μc／cm2〕で第３図に示す如く
レジスト膜３を所望パターンに描画する。続い
て、メチルイソブチルケトン溶液28〔℃〕で第４
図に示す如くレジスト膜３を現像しレジストパタ
ーンを形成する。次いで、平行平板型のリアクテ
イブイオンエツチング装置を用い高周波周波数
13.56〔ＭHz〕，反応性ガスCF4／H2で第５図に示
す如く上記レジストパターンをマスクとして酸化
膜２を選択エツチングする。 Next, an acceleration voltage of 20
[kV] and a dose of 10 [μc/cm 2 ], the resist film 3 is drawn in a desired pattern as shown in FIG. Subsequently, a fourth solution was added to the methyl isobutyl ketone solution at 28 [°C].
As shown in the figure, the resist film 3 is developed to form a resist pattern. Next, using a parallel plate type reactive ion etching device, high frequency
The oxide film 2 is selectively etched at 13.56 [MHz] using a reactive gas of CF 4 /H 2 using the resist pattern as a mask, as shown in FIG.
かくして得られる酸化膜２のパターンは前記レ
ジストパターンに忠実なものであり、微細パター
ンを精度良く形成することができた。 The pattern of the oxide film 2 thus obtained was faithful to the resist pattern, and a fine pattern could be formed with high precision.
なお、本発明は上述した実施例に限定されるも
のではない。例えば、前記被加工物は酸化膜に限
らず各種の部材を用いることができる。また、電
子ビームの代りにイオンビームを用いてもよい。
さらに、前記紫外線照射時に基板を加熱するよう
にしてもよい。その他、本発明の要旨を逸脱しな
い範囲で、種々変形して実施することができる。 Note that the present invention is not limited to the embodiments described above. For example, the workpiece is not limited to an oxide film, and various members can be used. Further, an ion beam may be used instead of an electron beam.
Furthermore, the substrate may be heated during the ultraviolet irradiation. In addition, various modifications can be made without departing from the gist of the present invention.
第１図乃至第５図はそれぞれ本発明の一実施例
に係わるパターン形成工程を示す模式図である。
１……Si基板、２……酸化膜（被加工物）、３
……レジスト膜。
1 to 5 are schematic diagrams each showing a pattern forming process according to an embodiment of the present invention. 1...Si substrate, 2...Oxide film (workpiece), 3
...Resist film.
Claims (1)
びメチルメタクリレートを含むレジスト膜を形成
する工程と、このレジスト膜表面に紫外線を照射
する工程と、しかるのち上記レジスト膜に荷電ビ
ームで所望パターンを描画する工程と、しかるの
ち上記レジスト膜を現像してレジストパターンを
形成する工程と、このレジストパターンをマスク
として前記被加工物を選択エツチングする工程と
を具備したことを特徴とする微細パターン形成方
法。 ２ 前記被加工物を選択エツチングする工程とし
て、ドライエツチング法を用いたことを特徴とす
る特許請求の範囲第１項記載の微細パターン形成
方法。[Claims] 1. A step of forming a resist film containing polymethyl methacrylate and methyl methacrylate on a workpiece, a step of irradiating the surface of this resist film with ultraviolet rays, and then irradiating the resist film with a charged beam as desired. A fine pattern characterized by comprising a step of drawing a pattern, a step of developing the resist film to form a resist pattern, and a step of selectively etching the workpiece using the resist pattern as a mask. Formation method. 2. The fine pattern forming method according to claim 1, wherein a dry etching method is used as the step of selectively etching the workpiece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929181A JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8929181A JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57204033A JPS57204033A (en) | 1982-12-14 |
| JPH0241740B2 true JPH0241740B2 (en) | 1990-09-19 |
Family
ID=13966580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8929181A Granted JPS57204033A (en) | 1981-06-10 | 1981-06-10 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57204033A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951527A (en) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | Pattern formation |
| JPS6027131A (en) * | 1983-07-25 | 1985-02-12 | Rohm Co Ltd | Method for coating photoresist |
| JPS6045511U (en) * | 1983-09-02 | 1985-03-30 | 日本電気株式会社 | solid state microwave oscillator |
| CH678897A5 (en) * | 1986-05-10 | 1991-11-15 | Ciba Geigy Ag | |
| JP2594926B2 (en) * | 1987-02-20 | 1997-03-26 | 株式会社日立製作所 | Pattern formation method |
| JPS6431416A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Photoetching |
| DE4230297C1 (en) * | 1992-09-10 | 1994-03-17 | Kernforschungsz Karlsruhe | Use of a casting resin and process for its production |
-
1981
- 1981-06-10 JP JP8929181A patent/JPS57204033A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57204033A (en) | 1982-12-14 |
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