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JPH0241903B2 - - Google Patents
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JPH0241903B2 - - Google Patents

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Publication number
JPH0241903B2
JPH0241903B2 JP58141194A JP14119483A JPH0241903B2 JP H0241903 B2 JPH0241903 B2 JP H0241903B2 JP 58141194 A JP58141194 A JP 58141194A JP 14119483 A JP14119483 A JP 14119483A JP H0241903 B2 JPH0241903 B2 JP H0241903B2
Authority
JP
Japan
Prior art keywords
pressure
semiconductor element
oil
sealed
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58141194A
Other languages
Japanese (ja)
Other versions
JPS6032332A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58141194A priority Critical patent/JPS6032332A/en
Publication of JPS6032332A publication Critical patent/JPS6032332A/en
Publication of JPH0241903B2 publication Critical patent/JPH0241903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy

Landscapes

  • Die Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、油封均圧形半導体装置に係り、特に
外部雰囲気圧の高い状況下での使用に適した構造
を有する油封均圧形半導体装置に関するものであ
る。3000〜10000m級の大深度海中で使用する潜
水船、無人機等は、その電源を効率的に制御する
ためにインバータ、コンバータ、チヨツパー等の
電力制御装置を必要とする。これらの装置をこの
ような深海中で使用するには、耐圧容器中に収納
する必要がある。大深度の水圧に耐える耐圧容器
は、その重量が大きくなり、潜水船、無人機等を
重くする。このため浮力を大きくしようとする
と、耐圧容器自体が大きくなり、所定の大きさの
潜水船等を組立てられなくなる。そこで、この様
な条件下使用される半導体装置は、大圧力に耐え
ると同時に、小型軽量であることが強く要求され
る。従来一般に製造されている半導体装置では、
300Kgf/cm2〜1000Kgf/cm2程度の外部圧力下で
使用に耐えるものはなかつた。 第1図は従来の平形半導体装置の断面構造図で
あり、図中1は、セラミツク等からなる絶縁体筒
である。絶縁体筒1内には、所定の半導体素子2
が収容されている。半導体素子2は、その周側面
と絶縁体筒1の内壁面間に位置決めリング3を介
して固定されている。半導体素子2の上下の両主
面には、外部電極4,4が圧接されている。外部
電極4,4と絶縁体筒1間には上部フランジ5a
及び下部フランジ5bが夫々ろう付され、半導体
素子2の収納容器6を構成している。このように
して半導体素子を気密状態で収納した収納容器6
内には、不活性ガス7が封入されている。この様
な半導体装置では高い外部圧力が加わつた場合、
装置外装を構成する材料の鋼性が低いために、外
部圧力に耐えることができず、例えばフランジ部
分などが変形破断し、装置の気密が損なわれて初
期の電気的特性が劣化する。即ちこの様な半導体
装置は高い外部雰囲気圧の下で使用することはで
きない。第2図は、従来の半導体装置内部に電気
絶縁油を封入した改良形の半導体装置を示す。図
中8は電気絶縁油である。又、第1図と同一番号
は同等の構成部分を示す。この様な半導体装置に
おいては、外部圧力の増加に伴つて内部の電気絶
縁油の圧力も増加するので、外装の変形が緩和さ
れる均圧形パツケージを得ることができる。しか
し絶縁油であつても圧力による体積変化や、温度
による体積変化を起こすので、ある程度以上の外
部圧力の下では単に油を充てんしたのみの構造で
は圧力の急激な変化に対して耐え得ないことがわ
かつた。即ち、高い外部雰囲気圧の下では、フラ
ンジ5a,5b部やろう付け部等の機械的に弱い
部分が第3図中2点鎖線11にて示す様に変形
し、収納容器6が破損する。その結果、半導体素
子2の電気的特性を損う問題があつた。 装置の外部にベローズを付加して、圧力変化に
対する絶縁油の体積変化を吸収しようとする試み
は例えば第4図の様に油封式均圧形モーターなど
で実用化されている。図中21はロータであり、
その回転軸22を軸受け23を介してフレーム2
4から外部に導出している。フレーム24の内周
面にはロータ21に対向するようにしてステータ
ー25が取付けられている。フレーム24の後端
部に回転軸22の端部は、均圧ベローズ26で囲
まれている。均圧ベローズ26及びフレーム24
に囲まれた内部には、均圧油27が封入されてい
る。前述の油封式均圧形モーターにおいてはベロ
ーズとして例えばゴム等のやわらかい材質のベロ
ーズを取り付けることも可能であるが、半導体装
置の場合には、容器内に収納される半導体素子
が、非常に構造敏感性であるために極めて高い密
封度と不活性な内部雰囲気が要求される。従つて
一般に金属およびセラミツク壁による気密封止が
なされている。又、耐腐食性を考慮するとあまり
薄い金属壁を使用することも困難である。従つて
第5図の様に外部にベローズを付加しようとした
場合装置の内容積が大きくなりすぎて、逆に封入
オイルの量を増やさなければならなくなり、従つ
て体積変化量が増大するので、大型のベローズを
必要とする。この様な構造な先に述べたシステム
全体からの大きさの制約の取り扱い上の問題さら
には製造コストの観点から見ても実現性が低い。 本発明は、かかる点に鑑みてなされたものであ
り、電気絶縁油の容積変化を、u字形溝を有する
1対のフランジ部の弾性変形によつて吸収せしめ
て、半導体素子の優れた特性を発揮させると共
に、簡単な構造で高耐圧を有する油封均圧形半導
体装置を提供するものである。 即ち、本発明は、少なくとも2つ主面を持つ半
導体素子と、該半導体素子をその端面で支持して
収容した絶縁体筒と、前記主面の夫々に接触して
設けられた2つの外部電極と、前記半導体素子を
外気から遮断密閉するように前記2つの外部電極
と前記絶縁体筒間に取り付けられ、かつ、外部の
雰囲気の圧力変化に追従して弾性変形すると共
に、前記半導体素子を囲む領域と連通した中空部
と前記外部電極の付根部の表面側に形成された断
面略U字形溝を設けた互いに略同形の2つのフラ
ンジ部と、該2つのフランジ部、前記2つの外部
電極、及び前記絶縁体筒で囲まれた内部に前記半
導体素子を封止するように封入された電気絶縁油
そを具備することを特徴とする油封均圧形半導体
装置である。 以下、本発明の実施例について図面を参照して
説明する。 第6図は、本発明の一実施例の断面図である。
図中30は、半導体素子である。半導体素子30
はセラミツク等からなる絶縁体筒31内に収容さ
れている。半導体素子30は、その側端面と絶縁
体筒31の内壁面間に介在された位置決めリング
32によつて固定されている。半導体素子30の
表裏両主面には、外部電極33a,33bが取付
けられている。絶縁体筒31の下端部と裏面側の
外部電極33b間には、下部フランジ34bが取
付けられている。絶縁体筒31の上端部と表面側
の外部電極33a間には上部フランジ34aが取
付けられている。上部フランジ34a及び下部フ
ランジ34bは、外部電極33a,33bと絶縁
体筒31の間で折曲し、この折曲部によつて半導
体素子30を囲む領域と連通する中空部33cを
形成している。更に、上部フランジ34a及び下
部フランジ34bの外部電極33a,33bの付
根部には、外部電極33a,33bを囲むように
して断面略u字形溝34cが形成されている。上
部フランジ34a及び下部フランジ34b(以下、
単にフランジ部34と記す。)は、このu字形溝
34c及び中空部33cによつて、外力を受けた
際に弾性変形するようになつている。外部電極3
3a,33b、絶縁体筒31及びフランジ部34
によつて、収納容器35が構成されている。収納
容器35内には、半導体素子30を密封して封止
するように電気絶縁油36が封入されている。電
気絶縁油としては、例えばシリコン油が使用され
ている。絶縁体筒31の側部には、電気絶縁油3
6の封入管37が導出されており、その先端部は
封口されている。 このように構成された油封均圧形半導体装置
0によれば、フランジ部34にu字形溝34cが
形成されていると共に、フランジ部34によつて
中空部33cが形成されているので、第7図に2
点鎖線41にて示す如く、フランジ部34が弾性
変形してその圧力を吸収する。しかも、フランジ
部34は、半導体素子30の両主面側に上下部に
1対設けられているので、圧力吸収作用を増大さ
せることができる。同様に電気絶縁油36の容積
が、温度変化或は圧力変化によつて変化しても、
フランジ部34で容易に吸収される。その結果、
半導体素子30に不均一な圧力の加わるのを阻止
して、優れた素子特性を発揮させることができ
る。しかも、収納容器35は、内部に電気絶縁油
36を封入した状態になつているので、耐圧の向
上を達成できるものである。 なお、スタツク構造の電力制御装置を組立てる
場合には第8図に示す如く、油封均圧形半導体装
40の外部電極33a,33bにスタツク板4
2を数百〜数千Kgfで圧接することにより、容易
に構成することができる。 以上説明した如く、本発明に係る油封均圧形半
導体装置によれば、電気絶縁油の容積変化を、u
字形溝を有する1対のフランジ部の弾性変形によ
つて吸収せしめて、半導体素子の優れた特性を発
揮させると共に、簡単な構造で高耐圧を有するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an oil-sealed, pressure-equalized semiconductor device, and particularly to an oil-sealed, pressure-equalized semiconductor device having a structure suitable for use under conditions of high external atmospheric pressure. Submersibles, unmanned aerial vehicles, etc. used in deep seas of 3,000 to 10,000 m class require power control devices such as inverters, converters, and choppers in order to efficiently control their power supplies. In order to use these devices in such deep seas, they must be housed in pressure-resistant containers. Pressure-resistant containers that can withstand water pressure at great depths are heavy, making submersibles, unmanned aerial vehicles, etc. heavier. For this reason, if an attempt is made to increase the buoyancy, the pressure vessel itself will become larger, making it impossible to assemble a submersible or the like of a predetermined size. Therefore, semiconductor devices used under such conditions are strongly required to withstand large pressures and at the same time to be small and lightweight. In semiconductor devices that are conventionally manufactured,
There was nothing that could withstand use under an external pressure of about 300 Kgf/cm 2 to 1000 Kgf/cm 2 . FIG. 1 is a cross-sectional structural diagram of a conventional flat semiconductor device, and numeral 1 in the figure is an insulator tube made of ceramic or the like. A predetermined semiconductor element 2 is placed inside the insulator cylinder 1.
is accommodated. The semiconductor element 2 is fixed between its circumferential surface and the inner wall surface of the insulator cylinder 1 via a positioning ring 3. External electrodes 4, 4 are pressed into contact with both the upper and lower principal surfaces of the semiconductor element 2. An upper flange 5a is provided between the external electrodes 4, 4 and the insulator cylinder 1.
and the lower flange 5b are brazed to each other to form a storage container 6 for the semiconductor element 2. A storage container 6 in which semiconductor elements are stored in an airtight state in this way
Inert gas 7 is sealed inside. When high external pressure is applied to such semiconductor devices,
Since the material forming the exterior of the device has low steel properties, it cannot withstand external pressure, and, for example, the flange portion deforms and breaks, impairing the airtightness of the device and deteriorating its initial electrical characteristics. That is, such a semiconductor device cannot be used under high external atmospheric pressure. FIG. 2 shows an improved semiconductor device in which electrical insulating oil is sealed inside the conventional semiconductor device. 8 in the figure is electrical insulating oil. Also, the same numbers as in FIG. 1 indicate equivalent components. In such a semiconductor device, the pressure of the internal electrical insulating oil also increases as the external pressure increases, so it is possible to obtain a pressure-equalizing package in which deformation of the exterior is alleviated. However, even insulating oil causes volume changes due to pressure and temperature, so a structure simply filled with oil will not be able to withstand sudden changes in pressure under external pressure above a certain level. I understood. That is, under high external atmospheric pressure, mechanically weak parts such as the flanges 5a and 5b and the brazed parts are deformed as shown by the two-dot chain line 11 in FIG. 3, and the storage container 6 is damaged. As a result, there was a problem that the electrical characteristics of the semiconductor element 2 were impaired. Attempts to absorb changes in the volume of insulating oil due to changes in pressure by adding a bellows to the outside of the device have been put to practical use, for example, in oil-sealed pressure equalizing motors as shown in FIG. 21 in the figure is a rotor,
The rotating shaft 22 is connected to the frame 2 through a bearing 23.
4 to the outside. A stator 25 is attached to the inner peripheral surface of the frame 24 so as to face the rotor 21 . The end of the rotating shaft 22 at the rear end of the frame 24 is surrounded by a pressure equalizing bellows 26 . Equalizing pressure bellows 26 and frame 24
Pressure-equalizing oil 27 is sealed in the inside surrounded by. In the oil-sealed pressure equalizing motor mentioned above, it is possible to install a bellows made of a soft material such as rubber, but in the case of a semiconductor device, the semiconductor element housed in the container has a very sensitive structure. Due to its high temperature, an extremely high degree of sealing and an inert internal atmosphere are required. Therefore, hermetically sealed metal and ceramic walls are generally used. Furthermore, in consideration of corrosion resistance, it is difficult to use a metal wall that is too thin. Therefore, if an attempt is made to add a bellows externally as shown in Fig. 5, the internal volume of the device will become too large, and the amount of sealed oil will have to be increased, which will increase the amount of volume change. Requires large bellows. Such a structure is difficult to implement due to the above-mentioned problem in handling the size restriction of the entire system and also from the viewpoint of manufacturing cost. The present invention has been made in view of this point, and improves the excellent characteristics of semiconductor devices by absorbing changes in the volume of electrical insulating oil through elastic deformation of a pair of flanges having U-shaped grooves. The object of the present invention is to provide an oil-sealed pressure-equalizing semiconductor device which has a simple structure and high breakdown voltage. That is, the present invention provides a semiconductor element having at least two main surfaces, an insulator tube housing the semiconductor element while supporting the semiconductor element at its end surfaces, and two external electrodes provided in contact with each of the main surfaces. and is attached between the two external electrodes and the insulating cylinder so as to isolate and seal the semiconductor element from outside air, and is elastically deformed in accordance with pressure changes in the external atmosphere, and surrounds the semiconductor element. two flange portions having substantially the same shape as each other and having a hollow portion communicating with the region and a substantially U-shaped groove in cross section formed on the surface side of the root portion of the external electrode; the two flange portions; the two external electrodes; and an oil-sealed, pressure-equalized semiconductor device, comprising: an electrically insulating oil bath sealed in an interior surrounded by the insulating cylinder so as to seal the semiconductor element. Embodiments of the present invention will be described below with reference to the drawings. FIG. 6 is a cross-sectional view of one embodiment of the present invention.
30 in the figure is a semiconductor element. semiconductor element 30
is housed in an insulator cylinder 31 made of ceramic or the like. The semiconductor element 30 is fixed by a positioning ring 32 interposed between its side end surface and the inner wall surface of the insulator cylinder 31. External electrodes 33a and 33b are attached to both the front and back principal surfaces of the semiconductor element 30. A lower flange 34b is attached between the lower end of the insulator cylinder 31 and the external electrode 33b on the back side. An upper flange 34a is attached between the upper end of the insulator tube 31 and the outer electrode 33a on the front surface side. The upper flange 34a and the lower flange 34b are bent between the external electrodes 33a, 33b and the insulator tube 31, and the bent portion forms a hollow portion 33c that communicates with a region surrounding the semiconductor element 30. . Furthermore, a groove 34c having a substantially U-shaped cross section is formed at the base of the external electrodes 33a, 33b of the upper flange 34a and lower flange 34b so as to surround the external electrodes 33a, 33b. Upper flange 34a and lower flange 34b (hereinafter referred to as
It will simply be referred to as a flange portion 34. ) is designed to elastically deform when subjected to external force due to the U-shaped groove 34c and the hollow portion 33c. External electrode 3
3a, 33b, insulator cylinder 31 and flange part 34
The storage container 35 is constructed by the following. Electrical insulating oil 36 is sealed in the storage container 35 so as to hermetically seal the semiconductor element 30 . For example, silicone oil is used as the electrical insulating oil. Electrical insulating oil 3 is placed on the side of the insulator cylinder 31.
No. 6 enclosure tubes 37 are led out, and their tips are sealed. Oil-sealed pressure-equalizing semiconductor device 4 configured as described above
According to No. 0, a U-shaped groove 34c is formed in the flange portion 34, and a hollow portion 33c is formed by the flange portion 34, so as shown in FIG.
As shown by a dashed line 41, the flange portion 34 is elastically deformed to absorb the pressure. Furthermore, since the flange portions 34 are provided in pairs at the upper and lower portions on both main surfaces of the semiconductor element 30, the pressure absorption effect can be increased. Similarly, even if the volume of the electrical insulating oil 36 changes due to temperature or pressure changes,
It is easily absorbed by the flange portion 34. the result,
It is possible to prevent uneven pressure from being applied to the semiconductor element 30 and to exhibit excellent element characteristics. Moreover, since the storage container 35 is in a state in which the electrical insulating oil 36 is sealed inside, it is possible to improve the withstand voltage. In addition, when assembling a power control device with a stack structure, as shown in FIG.
2 can be easily constructed by pressing them together at several hundred to several thousand kgf. As explained above, according to the oil-sealed pressure-equalized semiconductor device according to the present invention, the change in the volume of electrical insulating oil can be
This is absorbed by the elastic deformation of a pair of flange portions having a shape groove, thereby exhibiting the excellent characteristics of the semiconductor element, and having a simple structure and high withstand voltage.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は、それぞれ従来の均圧形半
導体装置の断面図、第3図は、第2図に示す半導
体装置のフランジ部が外部圧力によつて変形して
いる状態を示す説明図、第5図は、従来の油封均
圧形半導体装置の断面図、第4図は、油封式均圧
形モータの断面図、第6図は、本発明の一実施例
の断面図、第7図は、同実施例の油封均圧形半導
体装置のフランジ部の変形状態を示す説明図、第
8図は、同実施例の油封均圧形半導体装置を組込
んだスタツク構造のものを示す説明図である。 30……半導体素子、31……絶縁体筒、32
……位置決めリング、33a,33b……外部電
極、33c……中空部、34a……上部フラン
ジ、34b……下部フランジ、34c……u字形
溝、35……収納容器、36……電気絶縁油、3
7……封入管、40……油封均圧形半導体装置、
42……スタツク板。
1 and 2 are cross-sectional views of conventional pressure-equalizing semiconductor devices, respectively, and FIG. 3 is an illustration showing a state in which the flange portion of the semiconductor device shown in FIG. 2 is deformed by external pressure. 5 is a cross-sectional view of a conventional oil-sealed pressure-equalizing semiconductor device, FIG. 4 is a cross-sectional view of an oil-sealed pressure-equalizing motor, and FIG. 6 is a cross-sectional view of an embodiment of the present invention. FIG. 7 is an explanatory diagram showing the deformed state of the flange portion of the oil-sealed pressure-equalizing semiconductor device of the same embodiment, and FIG. 8 shows a stacked structure incorporating the oil-sealed pressure-equalizing semiconductor device of the same embodiment. It is an explanatory diagram. 30... Semiconductor element, 31... Insulator cylinder, 32
... Positioning ring, 33a, 33b ... External electrode, 33c ... Hollow part, 34a ... Upper flange, 34b ... Lower flange, 34c ... U-shaped groove, 35 ... Storage container, 36 ... Electrical insulating oil ,3
7...Enclosed tube, 40 ...Oil sealed pressure equalized semiconductor device,
42...Stack board.

Claims (1)

【特許請求の範囲】[Claims] 1 少なくとも2つ主面を持つ半導体素子と、該
半導体素子をその側端面で支持して収容した絶縁
体筒と、前記主面の夫々に接触して設けられた2
つの外部電極と、前記半導体素子を外気から遮断
密閉するように前記2つの外部電極と前記絶縁体
筒間に取り付けられ、かつ、外部の雰囲気の圧力
変化に追従して弾性変形すると共に、前記半導体
素子を囲む領域と連通した中空部と前記外部電極
の付根部の表面側に形成された断面略U字形溝を
設けた互いに略同形状の2つのフランジ部と、該
2つのフランジ部、前記2つの外部電極、及び前
記絶縁体筒で囲まれた内部に前記半導体素子を封
止するように封入された電気絶縁油とを具備する
ことを特徴とする油封均圧形半導体装置。
1. A semiconductor element having at least two main surfaces, an insulating cylinder supporting and accommodating the semiconductor element on its side end surfaces, and 2.
one external electrode, which is attached between the two external electrodes and the insulating cylinder so as to isolate and seal the semiconductor element from the outside air, and which elastically deforms in accordance with pressure changes in the external atmosphere; two flange portions having substantially the same shape as each other, each having a hollow portion communicating with a region surrounding the element and a substantially U-shaped groove in cross section formed on the surface side of the root portion of the external electrode; 1. An oil-sealed pressure-equalizing semiconductor device, comprising: two external electrodes; and electrical insulating oil sealed in an interior surrounded by the insulating cylinder so as to seal the semiconductor element.
JP58141194A 1983-08-03 1983-08-03 Oil-sealed equalizing semiconductor device Granted JPS6032332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58141194A JPS6032332A (en) 1983-08-03 1983-08-03 Oil-sealed equalizing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58141194A JPS6032332A (en) 1983-08-03 1983-08-03 Oil-sealed equalizing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6032332A JPS6032332A (en) 1985-02-19
JPH0241903B2 true JPH0241903B2 (en) 1990-09-19

Family

ID=15286341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58141194A Granted JPS6032332A (en) 1983-08-03 1983-08-03 Oil-sealed equalizing semiconductor device

Country Status (1)

Country Link
JP (1) JPS6032332A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831067A (en) * 1972-05-15 1974-08-20 Int Rectifier Corp Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring
JPS5621352A (en) * 1979-07-28 1981-02-27 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6032332A (en) 1985-02-19

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