JPH0242786B2 - - Google Patents
Info
- Publication number
- JPH0242786B2 JPH0242786B2 JP11540485A JP11540485A JPH0242786B2 JP H0242786 B2 JPH0242786 B2 JP H0242786B2 JP 11540485 A JP11540485 A JP 11540485A JP 11540485 A JP11540485 A JP 11540485A JP H0242786 B2 JPH0242786 B2 JP H0242786B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- less
- tends
- porcelain
- sintering temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 4
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 3
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 claims description 2
- 229910001637 strontium fluoride Inorganic materials 0.000 claims description 2
- 238000005245 sintering Methods 0.000 description 10
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910017309 Mo—Mn Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- PNEFIWYZWIQKEK-UHFFFAOYSA-N carbonic acid;lithium Chemical compound [Li].OC(O)=O PNEFIWYZWIQKEK-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- DVQHRBFGRZHMSR-UHFFFAOYSA-N sodium methyl 2,2-dimethyl-4,6-dioxo-5-(N-prop-2-enoxy-C-propylcarbonimidoyl)cyclohexane-1-carboxylate Chemical compound [Na+].C=CCON=C(CCC)[C-]1C(=O)CC(C)(C)C(C(=O)OC)C1=O DVQHRBFGRZHMSR-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
（産業上の利用分野）
本発明はICパツケージ、IC基板、多層配線基
板等の電気絶縁材料として利用し得る磁器組成物
特に低温焼結可能な磁器組成物に存する。
（従来の技術）
従来のこの種電気絶縁材料としては絶縁性、耐
熱性機械的強度等諸特性に優れたアルミナが汎用
されており、焼結温度が1300〜1600℃であるとこ
ろから、Ｗ、Mo−Mn等の高融点金属を導体材
料として用いて基板等が構成されている。
（発明が解決しようとする問題点）
しかしこのような金属を導体材料としたもので
は電気抵抗導体が大きいために信号伝達速度が遅
く、又焼成温度が高いためにコスト高となる等の
問題点があつた。
その対策として本出願人はAg、Ag−Pd、Au、
Cuなどの低抵抗導体が焼付可能な1000℃以下で
焼成できる磁器材料について検討し、特願昭60−
27124号（SiO2−CaO−Al2O3−B2O3とジルコ
ン）及び特願昭60−27125号（SiO2−CaO−B2O3
−Al2O3）を生み出した。
即ち低抵抗金属を低温で焼付け得る材料として
結晶化ガラスは比較的高い機械的強度が得られる
がコストが高く、焼結磁器では低コストである
が、強度が低い欠点があり、前記した特許出願も
一応の改良がなされているもののなお一層改良さ
れた磁器組成物の出現が待たれているところであ
る。
（問題点を解決しようとする手段）
本発明者等は上記の問題点を解決すべく種々検
討の結果フツ化物を配合した磁器組成物がこの要
求を満足するものであることを見出した。
この組成物の概要は下記のとおりである。
Al2O3 ３〜17重量％、SiO2 30〜60重量％、
CaO 10〜30重量％及びB2O3 ５〜15重量％と、
MgO ５重量％以下、TiO2 ７重量％以下及び
Li2O ３重量％以下から選ばれる１種以上と、
CaF2、MgF2、AlF3、LiF、MnF2、BaF2及び
SrF2から選ばれるフツ化物１〜10重量％とから
なる磁器組成物である。
（作用）
ここに各成分の配合理由について記せば下記の
とおりである。Al2O3が３重量％未満のときは熱
膨脹係数が大きくなり、17重量％を越えると焼結
温度が高くなる傾向がある。
SiO2が15重量％より少ないと焼結温度が高く
なり誘電率も大きくなり、60重量％を超えると熱
膨脹係数が大きくなる傾向がある。MgOが５重
量％より多いと焼結温度が高くなり、熱膨脹係数
が大きくなる傾向がある。CaOが10重量％より少
ないと焼結温度が高くなり、30重量％より多いと
誘電率が大きくなる傾向がある。TiO2が７重量
％より多いと誘電率が大きくなる傾向がある。又
B2O3が５重量％より少ないと焼結温度が高くな
り、15重量％より多いと抗折強度が低くなる傾向
がある。Li2Oが５重量％より多いと抗折強度が
低くなる傾向がある。
更にフツ化物が１重量％より少ないときは抗折
強度が低くなり、10重量％より多いときは熱膨脹
係数が大きくなり過ぎる傾向がある。
本発明に於ては特にフツ化物を配合することに
より機械的強度を著るしく向上できることが認め
られたが、その作用は明確ではないが、ガラス相
の結晶化を促進する作用により磁器全体の結晶質
相の比率を高め、それが強度の向上につながつて
いるのではないかと推測される。
なおフツ化物の別の効果としては磁器の焼成温
度を低下させることが可能となつたことである。
又、本発明で用いられるフツ化物にはCaF2、
MgF2、AlF3、LiF、MnF2、BaF2、SrF2が適用
されるが、その一種又は二種以上を同時に選択し
て使用することができる。
（実施例）
アルミナ（Al2O3）
無水硅酸酸（SiO2試薬）
酸化マグネシウム（MgO
試薬）
炭酸カルシウム（CaCO3
試薬）
二酸化チタン（TiO2試薬）
酸化ホウ素（B2O3試薬）
炭酸リチウム（Li2CO3
試薬）
フツ化物（CaF2、MgF2、
AlF3など試薬） 所定量
〃
〃
〃
〃
〃
〃
〃500ｇ
ヒドロキシプロピルセルロース（HCP−SL 日
本曹達商品名） 15ｇ
水 450ml
以上を内容積３のアルミナ磁器ボールミル
へ、15mmφのアルミナ磁器球石２Kgと共に入れ、
84RPMで50時間混合粉砕した。
こうして得られたスラリーを冷凍乾燥機にて15
時間冷凍乾燥した後32メツシユの篩を通し素地と
した。
この素地を圧力1500Kg／cm2で金型プレス成形
し、焼結温度、抗折強度、誘電率、誘電体力率、
熱膨脹係数を測定した。
これを表示すれば以下のとおりである。
なお本発明で好ましい特性値は以下のとおりで
ある。
焼結温度1000℃以下、
抗折強度1600Kg／mm2以上
誘電率1MHz ８以下
誘電体力率1MHz×10-4 70以下
熱膨脹係数×10-6℃ 10以下
(Industrial Application Field) The present invention relates to a ceramic composition that can be used as an electrically insulating material for IC packages, IC boards, multilayer wiring boards, etc., particularly a ceramic composition that can be sintered at low temperatures. (Prior art) Alumina, which has excellent properties such as insulation, heat resistance, and mechanical strength, has been widely used as this type of electrical insulating material in the past, and since the sintering temperature is 1300 to 1600°C, W, A substrate etc. is constructed using a high melting point metal such as Mo-Mn as a conductor material. (Problems to be Solved by the Invention) However, when such metals are used as conductor materials, there are problems such as slow signal transmission speed due to the large electrical resistance conductor, and high cost due to high firing temperature. It was hot. As a countermeasure for this, the applicant has developed Ag, Ag-Pd, Au,
We studied porcelain materials that can be fired at temperatures below 1000°C, where low-resistance conductors such as Cu can be baked, and we applied for a patent application in 1983-
No. 27124 (SiO 2 −CaO−Al 2 O 3 −B 2 O 3 and zircon) and Patent Application No. 1982-27125 (SiO 2 −CaO−B 2 O 3
−Al 2 O 3 ). In other words, as a material that can be used to bake low-resistance metals at low temperatures, crystallized glass has relatively high mechanical strength but is expensive, while sintered porcelain is low-cost but has the disadvantage of low strength; Although some improvements have been made in porcelain compositions, the emergence of even more improved porcelain compositions is still awaited. (Means for Solving the Problems) The present inventors conducted various studies to solve the above problems and found that a porcelain composition containing fluoride satisfies this requirement. The outline of this composition is as follows. Al 2 O 3 3-17% by weight, SiO 2 30-60% by weight,
10-30% by weight of CaO and 5-15% by weight of B2O3 ,
MgO 5% by weight or less, TiO 2 7% by weight or less, and
One or more types selected from Li 2 O 3% by weight or less,
CaF 2 , MgF 2 , AlF 3 , LiF, MnF 2 , BaF 2 and
A porcelain composition comprising 1 to 10% by weight of a fluoride selected from SrF2 . (Function) The reasons for blending each component are as follows. When Al 2 O 3 is less than 3% by weight, the coefficient of thermal expansion tends to increase, and when it exceeds 17% by weight, the sintering temperature tends to increase. If SiO 2 is less than 15% by weight, the sintering temperature will be high and the dielectric constant will be high, and if it exceeds 60% by weight, the coefficient of thermal expansion will tend to be large. When MgO is more than 5% by weight, the sintering temperature tends to be high and the coefficient of thermal expansion tends to be large. When CaO is less than 10% by weight, the sintering temperature tends to be high, and when it is more than 30% by weight, the dielectric constant tends to increase. When TiO 2 is more than 7% by weight, the dielectric constant tends to increase. or
When B 2 O 3 is less than 5% by weight, the sintering temperature tends to be high, and when it is more than 15% by weight, the bending strength tends to be low. If Li 2 O is more than 5% by weight, the bending strength tends to be low. Furthermore, when the fluoride content is less than 1% by weight, the flexural strength tends to be low, and when it is more than 10% by weight, the coefficient of thermal expansion tends to become too large. In the present invention, it has been found that the mechanical strength can be significantly improved by especially incorporating fluoride, but although its effect is not clear, it promotes the crystallization of the glass phase, which improves the overall porcelain. It is speculated that the ratio of crystalline phase is increased, which leads to improved strength. Another effect of fluoride is that it has become possible to lower the firing temperature of porcelain. In addition, the fluorides used in the present invention include CaF 2 ,
MgF 2 , AlF 3 , LiF, MnF 2 , BaF 2 , and SrF 2 are applicable, and one or more of them can be selected and used at the same time. (Example) Alumina (Al 2 O 3 ) Silicic anhydride (SiO 2 reagent) Magnesium oxide (MgO reagent) Calcium carbonate (CaCO 3 reagent) Titanium dioxide (TiO 2 reagent) Boron oxide (B 2 O 3 reagent) Carbonic acid Lithium (Li 2 CO 3 reagent) Fluoride (CaF 2 , MgF 2 , AlF 3 and other reagents) Specified amount 〃 〃 〃 〃 〃 〃 〃 500g Hydroxypropyl cellulose (HCP-SL Nippon Soda brand name) 15g Water 450ml or more Place 2kg of 15mmφ alumina porcelain balls into a 3-size alumina porcelain ball mill.
Mixed and milled at 84 RPM for 50 hours. The slurry thus obtained was dried in a freeze dryer for 15 minutes.
After freeze-drying for an hour, it was passed through a 32-mesh sieve to obtain a base material. This base material was press-molded with a mold at a pressure of 1500 kg/ cm2 , and the sintering temperature, bending strength, dielectric constant, dielectric power factor,
The coefficient of thermal expansion was measured. This is displayed as follows. In addition, preferable characteristic values in the present invention are as follows. Sintering temperature 1000℃ or less, bending strength 1600Kg/mm 2 or more dielectric constant 1MHz 8 or less Dielectric power factor 1MHz x 10 -4 70 or less thermal expansion coefficient x 10 -6 ℃ 10 or less
【表】【table】
【表】
（発明の効果）
本発明によるときは、焼結温度が1000℃以下と
なるために焼成のコストダウンができ、Ag、Ag
−Pd、Au、Cu等の低抵抗導体が焼付可能とな
り、これによつて信号伝達速度を早めることがで
き、かつ抗折強度は1600以上誘電率は８以下
（1MHz）、誘電体力率70×10-4以下（1MHz）と小
さく、しかも熱膨脹係数もさ程大きくならないな
ど種々の効果を奏することができる。[Table] (Effects of the invention) According to the present invention, the sintering temperature is 1000°C or less, which reduces the cost of sintering.
- Low-resistance conductors such as Pd, Au, and Cu can be baked, which increases the signal transmission speed, and has a bending strength of 1600 and above, a dielectric constant of 8 and below (1MHz), and a dielectric power factor of 70× It is small at 10 -4 or less (1 MHz), and has various effects such as a coefficient of thermal expansion that does not become very large.
Claims (1)
CaO 10〜30重量％及びB2O3 ５〜15重量％と、
MgO ５重量％以下、TiO2 ７重量％以下及び
Li2O ３重量％以下から選ばれる１種以上と、
CaF2、MgF2、AlF3、LiF、MnF2、BaF2及び
SrF2から選ばれるフツ化物１〜10重量％とから
なることを特徴とする低温焼結磁器組成物。1 Al 2 O 3 3-17% by weight, SiO 2 30-60% by weight,
10-30% by weight of CaO and 5-15% by weight of B2O3 ,
MgO 5% by weight or less, TiO 2 7% by weight or less, and
One or more types selected from Li 2 O 3% by weight or less,
CaF 2 , MgF 2 , AlF 3 , LiF, MnF 2 , BaF 2 and
A low temperature sintered porcelain composition comprising 1 to 10% by weight of a fluoride selected from SrF2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11540485A JPS61275162A (en) | 1985-05-30 | 1985-05-30 | Low temperature sintering ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11540485A JPS61275162A (en) | 1985-05-30 | 1985-05-30 | Low temperature sintering ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61275162A JPS61275162A (en) | 1986-12-05 |
| JPH0242786B2 true JPH0242786B2 (en) | 1990-09-26 |
Family
ID=14661729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11540485A Granted JPS61275162A (en) | 1985-05-30 | 1985-05-30 | Low temperature sintering ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61275162A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101215157B (en) * | 2008-01-11 | 2011-08-17 | 清华大学 | Fluorine silicon aluminum doping glass-base low-temperature cofired ceramic material and preparing method thereof |
| JP5133207B2 (en) * | 2008-11-08 | 2013-01-30 | 住友化学株式会社 | Manufacturing method of aluminum titanate ceramics |
-
1985
- 1985-05-30 JP JP11540485A patent/JPS61275162A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61275162A (en) | 1986-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |