JPH0242897B2 - - Google Patents
Info
- Publication number
- JPH0242897B2 JPH0242897B2 JP20205682A JP20205682A JPH0242897B2 JP H0242897 B2 JPH0242897 B2 JP H0242897B2 JP 20205682 A JP20205682 A JP 20205682A JP 20205682 A JP20205682 A JP 20205682A JP H0242897 B2 JPH0242897 B2 JP H0242897B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- point metal
- target
- metal silicide
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は高融点金属シリサイド膜の形成技術に
関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a technology for forming a high melting point metal silicide film.
（従来例の構成とその問題点）
第１図は従来の高融点金属シリサイド膜の形成
方法を説明するためのスパツタ装置の構成の概略
を示す縦断面図である。１は磁石で、ターゲツト
２に平行に磁界を発生させるために設けられたも
の、３は水冷機構を有するターゲツト支持板であ
り、これら磁石１、ターゲツト２、ターゲツト支
持板３を一体として陰極部を構成する。この陰極
部は真空容器４内に固定され、真空容器４は真空
系の排気口５により高真空に保つことができる。
一方、ターゲツト２の面に対面してパレツト６が
設置され、パレツト６にはウエーハ７が固定され
る。ターゲツト２の面とウエーハ７の間隔は数10
cmである。(Structure of a conventional example and its problems) FIG. 1 is a vertical sectional view schematically showing the structure of a sputtering apparatus for explaining a conventional method of forming a high melting point metal silicide film. 1 is a magnet, which is provided to generate a magnetic field parallel to the target 2; 3 is a target support plate having a water cooling mechanism; these magnet 1, target 2, and target support plate 3 are integrated to form a cathode section. Configure. This cathode portion is fixed within a vacuum container 4, and the vacuum container 4 can be maintained at a high vacuum by an exhaust port 5 of a vacuum system.
On the other hand, a pallet 6 is placed facing the surface of the target 2, and a wafer 7 is fixed to the pallet 6. The distance between the surface of target 2 and wafer 7 is several tens.
cm.
まず、パレツト６にウエーハ７をセツトした後
真空容器４内を10-7Torrオーダの高真空度に真
空引きし、次いでガス供給口８からアルゴンガス
を供給して真空容器４内に10-3Torrオーダの真
空度に保ち、真空容器４をアースした状態で陰極
部にマイナス500ボルト程度の負電圧を印加する
と、真空容器４内に放電が起る。ここで、ターゲ
ツト表面近傍の磁界と印加電圧による電界が直交
する部分では、放電によつて電離した電子のマグ
ネトロン運動により、高密度のプラズマを発生
し、これがターゲツトをスパツタし、ターゲツト
分子をウエーハ７の面に付着させるのである。磁
界と電界の直交する高プラズマ領域では気体分子
の衝突により、二次電子が発生し、これが電界に
沿つて加速されてウエーハに衝突すると、同ウエ
ーハの温度が上昇し、同ウエーハ内に造り込まれ
ている機能素子にダメージを発生させる。９はこ
れを防止するために設置された２次電子捕獲用の
シールド板で、外容器４と同じアース電位に接続
されている。また、スパツタ初期にターゲツト２
の表面の汚染物質が同時にウエーハ７の表面に付
着されるのを防止するため、通常はシヤツター１
０によつて遮へいしたままで予備スパツタを行な
つた後、純度の高いターゲツト物質をウエーハ７
上に被着する。 First, after setting the wafer 7 on the pallet 6, the inside of the vacuum container 4 is evacuated to a high degree of vacuum on the order of 10 -7 Torr, and then argon gas is supplied from the gas supply port 8 to bring the inside of the vacuum container 4 to 10 -3 Torr. When a negative voltage of about -500 volts is applied to the cathode section while maintaining the degree of vacuum on the order of Torr and with the vacuum container 4 grounded, a discharge occurs within the vacuum container 4. Here, in the part where the magnetic field near the target surface and the electric field due to the applied voltage are perpendicular to each other, high-density plasma is generated due to the magnetron motion of the electrons ionized by the discharge, which sputters the target and sends the target molecules to the wafer 7. It is attached to the surface of the In the high plasma region where the magnetic and electric fields are perpendicular to each other, collisions of gas molecules generate secondary electrons.When these are accelerated along the electric field and collide with the wafer, the temperature of the wafer increases and This causes damage to the functional elements that are being used. Reference numeral 9 denotes a shield plate for capturing secondary electrons installed to prevent this, and is connected to the same ground potential as the outer container 4. Also, in the early stage of sputtering, target 2
In order to prevent contaminants on the surface of the wafer 7 from adhering to the surface of the wafer 7 at the same time, the shutter 1 is usually
After performing preliminary sputtering while shielded by
coated on top.
ところで、このような方法によりターゲツト物
質としての高融点金属シリサイドをスパツタした
場合の問題点の一つは、ウエーハ上に付着した膜
の純度が低く、半導体装置の製造に適用すること
ができないことである。その原因は、高融点金属
シリサイドターゲツト自体に含まれる重金属不純
物、アルカリ金属不純物等がスパツタされるこ
と、及びシールド板、シヤツター部分が若干スパ
ツタされることによつて生ずるものである。 By the way, one of the problems with sputtering high melting point metal silicide as a target material using this method is that the purity of the film deposited on the wafer is low and it cannot be applied to the manufacture of semiconductor devices. be. The cause of this is that heavy metal impurities, alkali metal impurities, etc. contained in the high melting point metal silicide target itself are sputtered, and the shield plate and shutter portion are slightly sputtered.
（発明の目的）
本発明は上記のような問題点を解決するために
なされたもので、高純度且つ緻密性の高い高融点
金属シリサイド膜を得るための改良された形成方
法を提供することを目的としたものである。(Objective of the Invention) The present invention has been made in order to solve the above-mentioned problems, and aims to provide an improved formation method for obtaining a high-melting point metal silicide film with high purity and high density. This is the purpose.
（発明の構成）
本発明の方法は、アルゴンガスプラズマ放電に
よるスパツタによつて、ターゲツト分子をウエー
ハに付着させる際に、真空容器内に、例えば、ハ
ロゲン系ガスのようなエツチング性ガスを前記プ
ラズマ用のガスと共に導入するもので、これによ
り、プラズマ領域中のターゲツト分子がエツチン
グ雰囲気中にさらされ、同時にスパツタされる重
金属類と反応する。エツチング性ガスと反応した
重金属類は、気化して真空系によつて、真空容器
外に排出される。この際、シリサイドターゲツト
分子もまたエツチング性ガスと反応することにな
るのであるが、アルゴンガス流量に対するエツチ
ング性ガス流量の比率を適切にコントロールする
ことにより、ウエーハ上に付着するスパツタ膜形
成速度を著しく落すことなく、シリサイド膜をウ
エーハ上に形成することが可能である。その結
果、ウエーハ上に付着する高融点金属シリサイド
膜は、純度の高い膜が得られる。(Structure of the Invention) In the method of the present invention, when attaching target molecules to a wafer by sputtering using argon gas plasma discharge, an etching gas such as a halogen gas is added to the plasma in a vacuum container. The target molecules in the plasma region are exposed to the etching atmosphere and simultaneously react with the sputtered heavy metals. The heavy metals that have reacted with the etching gas are vaporized and discharged from the vacuum container by the vacuum system. At this time, the silicide target molecules also react with the etching gas, but by appropriately controlling the ratio of the etching gas flow rate to the argon gas flow rate, the rate of spatter film formation on the wafer can be significantly reduced. It is possible to form a silicide film on a wafer without dropping it. As a result, the high melting point metal silicide film deposited on the wafer can be a highly pure film.
（実施例の説明）
第２図は本発明の方法を説明するためのスパツ
タ装置の構成の概略を示す断面図で、真空容器４
内にエツチング性ガスを導入するための導入口１
１に設けられた点が第１図と異なり、その他の部
分１〜１０は第１図に示したものと同じである。(Description of Examples) FIG. 2 is a cross-sectional view schematically showing the configuration of a sputtering apparatus for explaining the method of the present invention.
Inlet port 1 for introducing etching gas into the
1 is different from that shown in FIG. 1, and other parts 1 to 10 are the same as shown in FIG.
磁石１によつて生ずる磁界は点線ａで示すよう
にターゲツト２の面に平行な方向に生じ、その平
均値はで表わせる。また、陰極部と真空容器４
の間に印加された電圧によつて生ずる電界は、
磁界と直交する方向に生ずる。 The magnetic field generated by the magnet 1 is generated in a direction parallel to the plane of the target 2, as shown by the dotted line a, and its average value is expressed by . In addition, the cathode part and the vacuum container 4
The electric field caused by the voltage applied between
Occurs in a direction perpendicular to the magnetic field.
従つて、アルゴンガスプラズマは、領域ｂにて
最大密度をとり、この放電によつて電離した電子
は、ｖ＝／の速度でマグネトロン運動を行な
い、これがターゲツトをたたく。この時のアルゴ
ンガス流量は通常80ないしは100SCCM程度であ
る。 Therefore, the argon gas plasma has a maximum density in region b, and the electrons ionized by this discharge perform magnetron motion at a speed of v=/, which strikes the target. The argon gas flow rate at this time is usually about 80 to 100 SCCM.
ここで本発明においては、例えばハロゲン系の
エツチングガスを導入口１１を通して供給するこ
とに特徴を有するものである。エツチングガスと
しては、HCl，Cl2，BCl3，SF6，CF4，CHF4，
CCl4，C2F3などのハロゲン系を用いることがで
きる。このエツチング性ガス流量は、アルゴンガ
ス流量に対して0.1％ないし10％の範囲で許され
る。このエツチング性ガスは、主として領域ｂに
おいてスパツタされた分子と反応し、その反応生
成物は真空系を通して排気され、残りのスパツタ
された分子がウエーハ上に付着する。印加される
パワー、真空容器内の圧力等によつてエツチング
される量とスパツタされる量のバランスが変り、
エツチング性ガス流量の比率も変える必要が生ず
る。例えば、パワー7kw、圧力8mTorrでは、ア
ルゴンガス流量100SCCMに対して、エツチング
性ガス流量は、0.2％ないし0.3％が最も好ましい
結果を得ている。 Here, the present invention is characterized in that, for example, a halogen-based etching gas is supplied through the inlet 11. Etching gases include HCl, Cl 2 , BCl 3 , SF 6 , CF 4 , CHF 4 ,
Halogen compounds such as CCl 4 and C 2 F 3 can be used. The etching gas flow rate is allowed in a range of 0.1% to 10% of the argon gas flow rate. This etching gas reacts with the sputtered molecules primarily in region b, and the reaction products are evacuated through the vacuum system and the remaining sputtered molecules are deposited on the wafer. The balance between the amount of etching and the amount of sputtering changes depending on the applied power, the pressure inside the vacuum container, etc.
It is also necessary to change the ratio of etching gas flow rates. For example, at a power of 7 kW and a pressure of 8 mTorr, the most preferable results have been obtained with an etching gas flow rate of 0.2% to 0.3% for an argon gas flow rate of 100 SCCM.
モリブデンシリサイドターゲツトからスパツタ
により形成した膜の不純物を化学分析した一例を
示すと、従来方法では、アルカリ金属類で5ppm
ないし8ppm、鉄、ニツケル等の重金属類で
100ppbないし1ppm程度含有するのに対して、本
発明による方法で成膜した場合には、アルカリ類
で100ppb、重金属類は10ppb以下であつた。 An example of chemical analysis of impurities in a film formed by sputtering from a molybdenum silicide target shows that in the conventional method, 5ppm of alkali metals
or 8ppm, heavy metals such as iron and nickel
In contrast, when the film was formed by the method of the present invention, the alkali content was 100 ppb and the heavy metal content was 10 ppb or less.
（発明の効果）
以上説明したように本発明の方法によれば、高
融点金属シリサイド膜中の不純物を減少させ、安
定した膜形成を可能にする。更に、本発明の方法
によつて高融点金属シリサイド膜を形成した場
合、従来方法に比べて膜中に残留する応力が著し
く減少し、且つ、上記シリサイド粒子の成長速度
コントロールも非常に容易に行なえることも判つ
た。本発明にかかる方法を半導体装置の製造に適
用した場合、その電気的特性の安定化に著しい効
果を示す。(Effects of the Invention) As explained above, according to the method of the present invention, impurities in a high melting point metal silicide film can be reduced and stable film formation can be achieved. Furthermore, when a high melting point metal silicide film is formed by the method of the present invention, the stress remaining in the film is significantly reduced compared to conventional methods, and the growth rate of the silicide particles can be controlled very easily. It was also found that When the method according to the present invention is applied to the manufacture of semiconductor devices, it exhibits a remarkable effect on stabilizing the electrical characteristics thereof.
第１図は従来の高融点金属シリサイド膜の形成
方法を説明するためのスパツタ装置の構成の概略
を示す縦断面図、第２図は本発明の方法を説明す
るためのスパツタ装置の構成の概略を示す縦断面
図である。
１…磁石、２…ターゲツト、３…ターゲツト支
持板、４…真空容器、５…真空系の排気口、６…
パレツト、７…ウエーハ、８…ガス供給口、９…
２次電子捕獲用のシールド板、１０…シヤツタ、
１１…エツチング性ガス供給口。
FIG. 1 is a vertical cross-sectional view schematically showing the configuration of a sputtering device for explaining a conventional method for forming a high-melting-point metal silicide film, and FIG. 2 is a schematic diagram of the configuration of a sputtering device for explaining the method of the present invention. FIG. DESCRIPTION OF SYMBOLS 1... Magnet, 2... Target, 3... Target support plate, 4... Vacuum container, 5... Vacuum system exhaust port, 6...
Pallet, 7...Wafer, 8...Gas supply port, 9...
Shield plate for capturing secondary electrons, 10...shutter,
11...Etching gas supply port.
Claims (1)
室内に少なくとも前記シリサイドに対してエツチ
ング性を有するガスを導入することを特徴とする
高融点金属シリサイド膜の形成方法。 ２ エツチング性を有するガスを間歇的に導入す
ることを特徴とする特許請求の範囲第１項記載の
高融点金属シリサイド膜の形成方法。 ３ 導入されるエツチング性を有するガス濃度が
全ガス流量に対して0.1％〜10.0％であることを
特徴とする特許請求の範囲第１項記載の高融点金
属シリサイド膜の形成方法。[Scope of Claims] 1. A method for forming a high melting point metal silicide film, which comprises introducing a gas having an etching property to at least the silicide into a reaction chamber during deposition and formation of the high melting point metal silicide film. 2. A method for forming a high melting point metal silicide film according to claim 1, characterized in that a gas having etching properties is introduced intermittently. 3. The method for forming a high melting point metal silicide film according to claim 1, wherein the concentration of the gas having etching properties introduced is 0.1% to 10.0% of the total gas flow rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20205682A JPS5992995A (en) | 1982-11-19 | 1982-11-19 | Method for forming silicide film of high-melting metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20205682A JPS5992995A (en) | 1982-11-19 | 1982-11-19 | Method for forming silicide film of high-melting metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5992995A JPS5992995A (en) | 1984-05-29 |
| JPH0242897B2 true JPH0242897B2 (en) | 1990-09-26 |
Family
ID=16451205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20205682A Granted JPS5992995A (en) | 1982-11-19 | 1982-11-19 | Method for forming silicide film of high-melting metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5992995A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303067A (en) * | 1987-06-02 | 1988-12-09 | Anelva Corp | Bias sputtering device |
| JPH0685352B2 (en) * | 1988-09-29 | 1994-10-26 | 松下電器産業株式会社 | High frequency sputtering method and thin film EL element manufacturing method |
| US5853552A (en) * | 1993-09-09 | 1998-12-29 | Nippondenso Co., Ltd. | Process for the production of electroluminescence element, electroluminescence element |
-
1982
- 1982-11-19 JP JP20205682A patent/JPS5992995A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5992995A (en) | 1984-05-29 |
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