JPH0243720B2 - HANDOTAISHORYOSEKIEIGARASUSEIROSHINKAN - Google Patents
HANDOTAISHORYOSEKIEIGARASUSEIROSHINKANInfo
- Publication number
- JPH0243720B2 JPH0243720B2 JP15777082A JP15777082A JPH0243720B2 JP H0243720 B2 JPH0243720 B2 JP H0243720B2 JP 15777082 A JP15777082 A JP 15777082A JP 15777082 A JP15777082 A JP 15777082A JP H0243720 B2 JPH0243720 B2 JP H0243720B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- bubbles
- less
- concentration
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004031 devitrification Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Description
本発明は半導体を熱処理する際に使用される石
英ガラス製炉芯管の改良に関するものである。
従来から半導体製造用に、例えば拡散用あるい
は気相蒸着用等には石英ガラスが使用されてい
る。これらは、一般に高純度品として透明石英ガ
ラス製である。不透明石英ガラスも一部には使用
されているが、本来不純物が多いため失透を起し
易く、又、気孔を石英ガラス１cm3当り10万個以上
も含んでいるものであるため赤外線の透過効率が
悪く、かえつて加熱ムラを生じ易い。一方、透明
石英ガラスは高純度品であるため不透明石英ガラ
スと比較して失透は起しにくいが、赤外線の透過
率が良好すぎるため発熱体の発熱ムラがそのまゝ
加熱ムラとなるという欠点を有していた。
本発明は石英ガラス自体の耐熱性、耐蝕性等を
活用し、更にはこれに改良を加えることによつて
均熱性を改善し、熱変形の少ない、かつ長寿命の
半導体処理用石英ガラス製炉芯管を提供するもの
のである。
即ち、石英ガラス中に包含する気泡の量を石英
ガラス１cm3当り２〜９×10-3cm3とし、かつその気
孔の直径が15〜100μｍのものとするものである。
このような石英ガラスを得るには比較的透明な
原料を使用し、かつ適当な気泡が包含せしめられ
るような溶融法によることが必要であるが、この
範囲の気泡性および気泡量を存在せしめることに
よつてその赤外線透過率を著しく低下せしめるこ
となく均熱性が改善されたものとなり、更にOH
濃度を200ppm以下とすることによつて耐熱強度
を向上させることができる。気泡の量が石英ガラ
ス１cm3当り９×10-3cm3以上では赤外線透過率が低
下し温度ムラが生じ易くなり、又、２×10-3cm3以
下の場合も赤外線透過率が良好すぎて温度ムラが
生じ易い。
又、気孔径についてもその直径が15μｍ以下の
細かいものばかりであると気泡の量を石英ガラス
１cm3当り２〜９×10-3cm3の範囲とするためには気
泡の数が極端に多くなり、赤外線の透過率が低下
する。気泡径が100μｍ以上の場合は逆に赤外線
の透過率が良くなりすぎ赤外線の分散効果が低下
し発熱ムラが加熱ムラに直接反映し易くなる。
又、OH濃度は低ければ低い程熱間変形が少なく
なるが、上述の範囲内で気泡が存在する場合には
200ppm以下程度迄存在しても著しい強度低下は
認められない。
本発明の石英ガラスを得るには、高純度の石英
ガラス原料を回転容器において内面から加熱溶融
することによつて得られる。この場合、原料粒
度、回転数、溶融温度、溶融時間等を調整するこ
とにより任意の気泡径あるいは気泡量を有する石
英ガラスが得られる。
又、OH濃度を200ppm以下とするには溶融法
によつても達成できるが、OH濃度の高い石英ガ
ラスを高温において真空脱ガス処理を行つてもよ
い。
表１に本発明の石英ガラスおよび比較のための
石英ガラスについて、各気泡量についての均熱特
性を示す。均熱性テストは発熱体の均熱加熱領域
における石英ガラス管内の温度差を測定したもの
である。
The present invention relates to an improvement in a quartz glass furnace core tube used when heat treating semiconductors. BACKGROUND ART Quartz glass has conventionally been used for semiconductor manufacturing, for example, for diffusion or vapor phase deposition. These are generally made of transparent quartz glass as high purity products. Opaque quartz glass is also used in some cases, but it is prone to devitrification because it inherently contains many impurities, and it also contains more than 100,000 pores per cm3 of quartz glass, making it difficult for infrared rays to pass through. It is inefficient and tends to cause uneven heating. On the other hand, since transparent quartz glass is a high-purity product, devitrification is less likely to occur compared to opaque quartz glass, but its infrared transmittance is too good, so uneven heating of the heating element directly causes uneven heating. It had The present invention utilizes the heat resistance, corrosion resistance, etc. of quartz glass itself, and further improves these properties to improve heat uniformity, thereby producing a quartz glass furnace for semiconductor processing with little thermal deformation and long life. It provides a core tube. That is, the amount of air bubbles contained in the quartz glass is 2 to 9 x 10 -3 cm 3 per 1 cm 3 of quartz glass, and the diameter of the pores is 15 to 100 μm. In order to obtain such quartz glass, it is necessary to use relatively transparent raw materials and to use a melting method that allows appropriate bubbles to be included. The thermal uniformity has been improved without significantly reducing the infrared transmittance, and the OH
Heat resistance strength can be improved by setting the concentration to 200 ppm or less. If the amount of bubbles is more than 9 x 10 -3 cm 3 per 1 cm 3 of quartz glass, the infrared transmittance will decrease and temperature unevenness will easily occur, and if the amount is less than 2 x 10 -3 cm 3 , the infrared transmittance will be too good. Temperature unevenness is likely to occur. Also, if the pores are all small, with a diameter of 15 μm or less, the number of bubbles will be extremely large in order to keep the amount of bubbles in the range of 2 to 9 × 10 -3 cm 3 per 1 cm 3 of quartz glass. Therefore, the transmittance of infrared rays decreases. Conversely, when the bubble diameter is 100 μm or more, the transmittance of infrared rays becomes too good, the dispersion effect of infrared rays decreases, and uneven heating tends to be directly reflected in uneven heating.
Also, the lower the OH concentration, the less hot deformation will occur, but if bubbles are present within the above range,
Even if it is present up to 200 ppm or less, no significant decrease in strength is observed. The quartz glass of the present invention can be obtained by heating and melting a high-purity quartz glass raw material from the inner surface in a rotating container. In this case, by adjusting the raw material particle size, rotation speed, melting temperature, melting time, etc., quartz glass having any bubble diameter or bubble amount can be obtained. Furthermore, the OH concentration can be reduced to 200 ppm or less by a melting method, but quartz glass having a high OH concentration may be subjected to vacuum degassing treatment at a high temperature. Table 1 shows the soaking properties for each amount of bubbles for the quartz glass of the present invention and the quartz glass for comparison. The thermal stability test measures the temperature difference within the quartz glass tube in the uniform heating area of the heating element.
【表】
又、表２にOH濃度に関する熱間変形の状態を
示す。比較テスト条件は表２に示すOH濃度を有
する石英ガラス管を1400℃、４時間加熱した時の
管のつぶれの状態で比較したもので、長径ａと短
径ｂとの比で表わした。[Table] Table 2 also shows the state of hot deformation with respect to OH concentration. The comparative test conditions were the collapsed state of the tube when heated at 1400° C. for 4 hours with quartz glass tubes having the OH concentrations shown in Table 2, and expressed as the ratio of the major axis a to the minor axis b.
【表】
なお使用した石英ガラスはいずれもその気泡径
および気泡量はほゞ同じものを使用した。
このように本発明のような気泡およびOH濃度
を有する石英ガラス管は均熱性が向上し、かつ熱
変形も少ない長寿命のものとして得られる。[Table] The quartz glasses used had substantially the same bubble diameter and bubble volume. As described above, the quartz glass tube having air bubbles and OH concentration as in the present invention has improved thermal uniformity and has a long life with less thermal deformation.
Claims (1)
100μｍであつて、かつ石英ガラス１cm3当りにお
ける気泡の全体積が２〜９×10-3cm3であることを
特徴とする半導体処理用石英ガラス製炉芯管。 ２ 石英ガラス中のOH濃度が200ppm以下であ
ることを特徴とする特許請求の範囲第１項記載の
半導体処理用石英ガラス製炉芯管。[Claims] 1. The diameter of the bubbles contained in the quartz glass is 15 to 15.
1. A quartz glass furnace core tube for semiconductor processing, which has a diameter of 100 μm and has a total volume of bubbles of 2 to 9×10 −3 cm 3 per 1 cm 3 of quartz glass. 2. The quartz glass furnace core tube for semiconductor processing according to claim 1, wherein the OH concentration in the quartz glass is 200 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15777082A JPH0243720B2 (en) | 1982-09-10 | 1982-09-10 | HANDOTAISHORYOSEKIEIGARASUSEIROSHINKAN |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15777082A JPH0243720B2 (en) | 1982-09-10 | 1982-09-10 | HANDOTAISHORYOSEKIEIGARASUSEIROSHINKAN |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3295270A Division JPH0633240B2 (en) | 1991-08-23 | 1991-08-23 | Quartz glass furnace core tube for semiconductor processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5950096A JPS5950096A (en) | 1984-03-22 |
| JPH0243720B2 true JPH0243720B2 (en) | 1990-10-01 |
Family
ID=15656921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15777082A Expired - Lifetime JPH0243720B2 (en) | 1982-09-10 | 1982-09-10 | HANDOTAISHORYOSEKIEIGARASUSEIROSHINKAN |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243720B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0657612B2 (en) * | 1987-05-14 | 1994-08-03 | 信越石英株式会社 | Synthetic quartz glass tube and manufacturing method thereof |
| JPH0692276B2 (en) * | 1988-02-03 | 1994-11-16 | 三菱マテリアル株式会社 | Quartz crucible for pulling silicon single crystal |
| JPH0764673B2 (en) * | 1990-01-10 | 1995-07-12 | 三菱マテリアル株式会社 | Quartz crucible manufacturing method |
| JP3011866B2 (en) * | 1994-11-30 | 2000-02-21 | 信越石英株式会社 | Single wafer processing equipment |
| US5651827A (en) * | 1996-01-11 | 1997-07-29 | Heraeus Quarzglas Gmbh | Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same |
| JP4398527B2 (en) * | 1998-05-25 | 2010-01-13 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystals |
| US20060281623A1 (en) * | 2005-06-10 | 2006-12-14 | General Electric Company | Free-formed quartz glass ingots and method for making the same |
-
1982
- 1982-09-10 JP JP15777082A patent/JPH0243720B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5950096A (en) | 1984-03-22 |
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