JPH0244404B2 - - Google Patents
Info
- Publication number
- JPH0244404B2 JPH0244404B2 JP59004312A JP431284A JPH0244404B2 JP H0244404 B2 JPH0244404 B2 JP H0244404B2 JP 59004312 A JP59004312 A JP 59004312A JP 431284 A JP431284 A JP 431284A JP H0244404 B2 JPH0244404 B2 JP H0244404B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- differential
- output
- current
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Amplifiers (AREA)
Description
【発明の詳細な説明】
本発明は差動入力差動出力端子を有する差動増
幅器に関するものであり、特にモノリシツク集積
回路で実現するに適した差動増幅器に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a differential amplifier having differential inputs and differential outputs, and in particular to a differential amplifier suitable for implementation in a monolithic integrated circuit.
従来差動増幅器としてはNチヤンネルMOSモ
ノリシツク集積化するに適した回路が提案されて
いるが、入出力電圧範囲に制約が有り応用範囲が
限定されていた。 Conventionally, circuits suitable for N-channel MOS monolithic integration have been proposed as differential amplifiers, but the range of application is limited due to restrictions on the input/output voltage range.
本発明の目的はかかる制約を受けないCMOS
モノリシツク集積化するに適した回路を提供する
ことにある。 The object of the present invention is to provide a CMOS device that is free from such limitations.
The object of the present invention is to provide a circuit suitable for monolithic integration.
本発明の他の目的は従来回路の同相帰還回路部
分から受ける入出力動作電圧範囲の制約を回避す
ることのできる回路構成手段を提供することにあ
る。 Another object of the present invention is to provide circuit configuration means that can avoid restrictions on the input/output operating voltage range imposed by the common mode feedback circuit portion of the conventional circuit.
本発明による差動増幅器は一対の入力端子と一
対の出力端子をそれぞれ有する第1及び第2の差
動増幅段を有し、上記第2差動増幅段の電流セン
ス回路と、電流ミラー回路と、上記電流センス回
路と、上記電流センス回路の出力を上記電流ミラ
ー回路の入力へ導く回路接続と、上記電流ミラー
回路の出力を上記第1差動増幅段の能動負荷電流
制御素子へ導く回路接続とで構成されている。 The differential amplifier according to the present invention has first and second differential amplifier stages each having a pair of input terminals and a pair of output terminals, and a current sense circuit and a current mirror circuit of the second differential amplifier stage. , the current sense circuit, a circuit connection that leads the output of the current sense circuit to the input of the current mirror circuit, and a circuit connection that leads the output of the current mirror circuit to the active load current control element of the first differential amplifier stage. It is made up of.
本発明の一態様によれば第1第2の第1導電型
電界効果トランジスタ(以下FETと略す)で構
成した共通ソース差動段と、該共通ソース点と第
1の電源端子間への定電流源の回路接続と、第3
第4の第2導電型FETで構成した動動負荷回路
とからなる第1の差動増幅回路と、ソースが共に
第2の電流端子へ接続された第5第6の第2導電
型FETで構成した差動段と、ソースが共に第1
の電源端子へ接続された第7第8の第1導電型
FETで構成した能動負荷回路とからなる第2の
作動増幅回路と、ゲート及びソースが前記第5の
FETのゲート及びソースと各々共通接続された
第9の第2導電型FETと、ゲート及びソースが
前記第6のFETのゲート及びソースと各々共通
接続された第10の第2導電型FETと、第11第12
の第1導電型FETの各々のゲートと第11FETの
ドレインとの共通接続を入力とし第12FETのド
レインを出力とする電流ミラー回路と、ゲートド
レインが共通接続された第13の第2導電型FET
と、該共通接続点の上記電流ミラー回路の出力と
前記第3第4のFETの各々のゲートへの回路と
からなる同相帰還回路とを有し、上記第1第2の
FETのゲートの第1第2の差動入力端子への接
続と、上記第5第7FETのドレインの第1の出力
端子への回路接続と、上記第6第8FETのドレイ
ンの第2の出力端子への回路接続と、上記第7第
8のFETのゲートの同相帰還入力端子への共通
接続とを少くとも有する差動増巾器が得られる。 According to one aspect of the present invention, a common source differential stage configured of first, second, and first conductivity type field effect transistors (hereinafter abbreviated as FETs), and a voltage source between the common source point and the first power supply terminal are provided. Current source circuit connection and third
A first differential amplifier circuit consisting of a dynamic load circuit configured with a fourth FET of the second conductivity type, and a fifth and sixth FET of the second conductivity type whose sources are both connected to the second current terminal. The configured differential stage and the source are both the first
the seventh and eighth first conductivity type connected to the power supply terminal of
a second operational amplifier circuit consisting of an active load circuit constituted by an FET, and a gate and a source of the fifth operational amplifier circuit;
a ninth second conductivity type FET whose gate and source are each commonly connected to the gate and source of the FET; and a tenth second conductivity type FET whose gate and source are respectively commonly connected to the gate and source of the sixth FET; 11th 12th
a current mirror circuit in which the common connection between the gates of each of the first conductivity type FETs and the drain of the 11th FET is used as an input, and the drain of the 12th FET is used as an output; and a 13th second conductivity type FET whose gates and drains are commonly connected.
and a common mode feedback circuit comprising an output of the current mirror circuit at the common connection point and a circuit to each gate of the third and fourth FET,
A circuit connection of the gate of the FET to the first and second differential input terminals, a circuit connection of the drain of the fifth and seventh FET to the first output terminal, and a second output terminal of the drain of the sixth and eighth FET. A differential amplifier is obtained having at least a circuit connection to the gate of the seventh and eighth FETs and a common connection to the common mode feedback input terminal of the gates of the seventh and eighth FETs.
以下図面に従つて説明する。 This will be explained below with reference to the drawings.
第1図は従来のNMOS構成の差動増幅器の例
であつて米国インテル社のDaniel Senderowicz
氏の論文“A Family of Differential NMOS
Analog Circuits for PCM Codec Filter Chip”
IEEE Journal of Solid―State Circuits,vol.
SC―17,NO―6,Dec,1982に開示された技術
である。 Figure 1 shows an example of a conventional differential amplifier with an NMOS configuration.
His paper “A Family of Differential NMOS
Analog Circuits for PCM Codec Filter Chip”
IEEE Journal of Solid-State Circuits, vol.
This is a technology disclosed in SC-17, NO-6, Dec, 1982.
FET1,2は入力差動段201を構成してい
る。デイプリーシヨンFET3,4は能動負荷回
202を構成し、FET1〜4と電流源となる
FET50とで差動増幅段を構成している。 FETs 1 and 2 constitute an input differential stage 201. Depletion FETs 3 and 4 constitute an active load circuit 202, and together with FETs 1 to 4 serve as a current source.
A differential amplification stage is configured with FET50.
また差動接続されたFET5,6は出力差動段
203を構成し、デイプリーシヨンFET7,8
はその能動負荷回路204を構成し、これらと電
流源となるFET51とで第2の差動増幅段が構
成されている。回路206および207は入力1
01,102と出力端子103,104間のオフ
セツト補償回路である。 Furthermore, the differentially connected FETs 5 and 6 constitute an output differential stage 203, and the depletion FETs 7 and 8
constitutes the active load circuit 204, and these and the FET 51 serving as a current source constitute a second differential amplification stage. Circuits 206 and 207 are input 1
This is an offset compensation circuit between output terminals 01 and 102 and output terminals 103 and 104.
FET5,6の共通ソース接続点から電流源
FET50のゲートへ至る回路接続は同相帰還ル
ープであり初段の差動増幅段の同相出力電位と第
2の差動増幅段の同相入力電位の安定バイアス化
に貢献している。また容量とFETのシリーズ回
路207と206は周波数補償回路である。 Current source from the common source connection point of FET5 and 6
The circuit connection to the gate of the FET 50 is a common-mode feedback loop, which contributes to stable biasing of the common-mode output potential of the first differential amplifier stage and the common-mode input potential of the second differential amplifier stage. Further, series circuits 207 and 206 of capacitors and FETs are frequency compensation circuits.
ところで第1図の回路の入力段の同相出力バイ
アス電位はFET50のゲート・ソース間電圧
(VGS)とFET5又は6のVGSとで決まり第1
の電源端子110から2×VGSの電位となる。
したがつて初段のトランジスタ1,2が線形動作
する同相入力電圧範囲は略1VGS〜2.5VGSの電
圧範囲となり非常に狭い電圧範囲となつている。 By the way, the common-mode output bias potential of the input stage of the circuit shown in Figure 1 is determined by the gate-source voltage (VGS) of FET 50 and the VGS of FET 5 or 6.
The potential is 2×VGS from the power supply terminal 110 of .
Therefore, the common mode input voltage range in which the first stage transistors 1 and 2 operate linearly is approximately 1VGS to 2.5VGS, which is a very narrow voltage range.
一方出力段の差動増幅段の同相出力電圧範囲は
FET5,6のゲートが2・VGSなる電位に同相
バイアスされているため略2×VGS以上の電圧
範囲に限定される。 On the other hand, the common mode output voltage range of the output stage differential amplifier stage is
Since the gates of FETs 5 and 6 are in-phase biased to a potential of 2.VGS, the voltage range is limited to approximately 2.times.VGS or more.
一般に広い同相入出力電圧範囲を有しない差動
増幅器はその応用範囲が著しく限定されるという
欠点を有している。 Generally, differential amplifiers that do not have a wide common-mode input/output voltage range have the disadvantage that their range of application is extremely limited.
第1図のNMOS回路のFET3,4,7,8を
PチヤンネルFETで置き代えた回路は相補型
MOS(CMOS)回路技術で容易に実現しうるが、
PチヤンネルFETの有する出力インピーダンス
がデイプリーシヨンMOS(FET3,4,7,8)
の出力インピーダンス(ゲートソース短絡点を見
込むインピーダンス)に比して優位であることに
よる同相出力電圧範囲の拡大が得られるだけであ
る。 The circuit in which FETs 3, 4, 7, and 8 of the NMOS circuit in Figure 1 are replaced with P-channel FETs is a complementary type.
Although it can be easily realized using MOS (CMOS) circuit technology,
The output impedance of P channel FET is depletion MOS (FET3, 4, 7, 8)
The common mode output voltage range can only be expanded by being superior to the output impedance of (the impedance considering the gate-source short circuit).
第2図はIEEE Jovrnal of Solid State Circ
―uits,Vol―SC―6,No6,Dec,1971に携載
された論文“A High―Voltage Monolithic
OPertional Amplifier”に開示されているバイ
ポーラトランジスタを用いた差動増幅器の他の従
来例である。逆導電型トランジスタを用いる事に
よつて同相入力電圧範囲は拡大している。 Figure 2 shows the IEEE Jovrnal of Solid State Circ.
―uits, Vol―SC―6, No6, Dec, 1971, the paper “A High―Voltage Monolithic
This is another conventional example of a differential amplifier using bipolar transistors, which is disclosed in "OPertional Amplifier". By using opposite conductivity type transistors, the common mode input voltage range is expanded.
第2図と同等の回路をCMOS集積回路で構成
した例を第3図に示す。 FIG. 3 shows an example in which a circuit equivalent to that in FIG. 2 is constructed using a CMOS integrated circuit.
出力段の差動増幅段の差動FET5,6をPチ
ヤンネル型、負荷回路7,8をNチヤンネル型
FETで構成することにより同相入力電圧範囲は
拡大されるが同相出力電圧範囲はさらに効果的回
路手段を用いなければ拡大することはできない。 The differential FETs 5 and 6 of the differential amplifier stage in the output stage are P-channel type, and the load circuits 7 and 8 are N-channel type.
Although the common mode input voltage range is expanded by using FETs, the common mode output voltage range cannot be expanded without using more effective circuit means.
次に第4図を参照して本発明の基本構成を示
す。 Next, the basic configuration of the present invention will be shown with reference to FIG.
第4図に於いて入力端子101,102の接続
された第1(入力段)の差動増幅段200と出力
端子103,104の接続された第2(出力段)
の差動段210とに対し、第2段目210の動作
電流を検出し、初段の能動負荷へ帰還する電流セ
ンス回路220を設けることにより安定な直流バ
イアス点を待つている。端子105は差動段21
0へのバイアス電圧(VB)端子である。 In FIG. 4, a first (input stage) differential amplifier stage 200 is connected to input terminals 101 and 102, and a second (output stage) is connected to output terminals 103 and 104.
A stable DC bias point is waited for by providing a current sense circuit 220 for detecting the operating current of the second stage 210 and feeding it back to the active load of the first stage. The terminal 105 is the differential stage 21
0 bias voltage (V B ) terminal.
第5図を参照して本発明で用いる出力段増幅器
210の構成について説明する。第5図に於い
て、NchFET7,8が能動負荷、Pch FET5,
6,9,10が差動段5,6及び電流センス
FET差動段9,10を構成する。これによつて
差動増幅回路であつて電源まで出力振幅可能な回
路を提供している。ここでPch FET5,9は前
段からの出力信号を受ける端子121に、Pch
FET6,10は同様に差動入力端子1222接
続されている。端子123はセンス電流出力端子
である。 The configuration of the output stage amplifier 210 used in the present invention will be explained with reference to FIG. In Figure 5, Nch FET7 and 8 are active loads, Pch FET5,
6, 9, 10 are differential stages 5, 6 and current sense
It constitutes FET differential stages 9 and 10. This provides a differential amplifier circuit capable of output amplitude up to the power supply. Here, Pch FETs 5 and 9 connect Pch FETs to terminals 121 that receive output signals from the previous stage.
FETs 6 and 10 are similarly connected to differential input terminals 1222. Terminal 123 is a sense current output terminal.
本発明による差動増巾回路の具体的実施例を第
6図を参照して説明する。なお、第1図との共通
部分には同一番号を付してある。 A specific embodiment of the differential amplifier circuit according to the present invention will be described with reference to FIG. Note that parts common to those in FIG. 1 are given the same numbers.
電流ミラー回路205とPチヤンネルFET1
3とFET9,10とで同相帰還ループが構成さ
れ初段の同相出力電圧と、出力段差動増幅器の差
動段203を安定バイアスしている。入力段の差
動増巾器の同相出力電位は第2の電源端子120
からFET5、又は6のVGS1段落の電位点であ
り、したがつて第1の差動増幅段の同相入力電圧
は著しく拡大された事になるすなわち同相入力範
囲は第1の電源端子から略2VGS高い電位から第
2の電源端子から略1VGS落ちの電位まで広い電
圧範囲に拡大された。一方、同相出力電圧範囲は
第2差動増幅段の出力端子の動作電圧範囲で決ま
り、この端子電圧動作範囲は第1,第2の電源端
子間の電圧範囲まで拡大されることになる。但し
線形動作する範囲は各々電源電圧から(VGS―
VT)1段狭まるのみでありこの範囲でも従来例
に比して著しく拡大されている。 Current mirror circuit 205 and P channel FET1
3 and FETs 9 and 10, a common mode feedback loop is configured to stably bias the common mode output voltage of the first stage and the differential stage 203 of the output stage differential amplifier. The common mode output potential of the input stage differential amplifier is connected to the second power supply terminal 120.
is the potential point of the VGS1 stage of FET 5 or 6. Therefore, the common mode input voltage of the first differential amplifier stage has been significantly expanded. In other words, the common mode input range is approximately 2 VGS higher than the first power supply terminal. The voltage range has been expanded from the potential to a potential approximately 1VGS below the second power supply terminal. On the other hand, the common mode output voltage range is determined by the operating voltage range of the output terminal of the second differential amplifier stage, and this terminal voltage operating range is expanded to the voltage range between the first and second power supply terminals. However, the range of linear operation is from the power supply voltage (VGS-
V T ) is narrowed by only one step, and even this range is significantly expanded compared to the conventional example.
尚第2(出力)段目の差動増幅の同相電圧は第
1図,第2図共差動出力端子103,104から
同相帰還入力端子105への帰還回路(β―Net
―work)により安定バイアスされる。 The common mode voltage of the second (output) stage differential amplification is connected to the feedback circuit (β-Net
-work) makes it stable.
第7図を参照して本発明の他の実施例について
説明する。 Another embodiment of the present invention will be described with reference to FIG.
本実施例はバイポーラトランジスタを用いて構
成されたものである。入力段の差動回路は、入力
端子101,102にベースが接続したNPNト
ランジスタB1,B2による差動入力対と、
PNPトランジスタB3,B4,B13によつて
構成されるミラー型負荷回路によつて構成され
る。出力段の差動回路は入力用PNPトランジス
タB5,B6、センス用PNPトランジスタB9,
B10およびNPN負荷トランジスタB7,B8
によつて構成される。トランジスタB9,B10
のコレクタはトランジスタB12,B11によつ
て構成されるミラー回路に入力されている。 This embodiment is constructed using bipolar transistors. The input stage differential circuit includes a differential input pair made up of NPN transistors B1 and B2 whose bases are connected to input terminals 101 and 102,
It is constituted by a mirror type load circuit constituted by PNP transistors B3, B4, and B13. The output stage differential circuit includes input PNP transistors B5 and B6, sense PNP transistor B9,
B10 and NPN load transistors B7, B8
Composed by. Transistors B9, B10
The collector of is input to a mirror circuit constituted by transistors B12 and B11.
本実施例も第6図の実施例と同様に動作するこ
とは明らかである。 It is clear that this embodiment also operates in the same manner as the embodiment of FIG.
以上説明した通り、本発明の差動増幅器は同相
入出力電圧範囲を著しく拡大しており広い応用範
囲に適用しうる有効な差動増幅回路手段を提供し
ている。 As explained above, the differential amplifier of the present invention significantly expands the common-mode input/output voltage range, and provides an effective differential amplifier circuit that can be applied to a wide range of applications.
さらに本発明は従来例に比して構成素子数を特
に増加する事なく構成できる上にCMOS構成と
する事による同相ループの開ループゲインと共に
差動入力から差動出力への差動利得も著しく向上
しており当技術分野に於ける応用範囲の広い差動
増幅器を提供している。 Furthermore, the present invention can be configured without particularly increasing the number of constituent elements compared to the conventional example, and the CMOS configuration significantly increases the open loop gain of the common mode loop and the differential gain from differential input to differential output. This provides a differential amplifier that has been improved and has a wide range of applications in the art.
第1図はNMOS構成の従来の差動増巾器を示
す回路図、第2図はバイポーラトランジスタ構成
の従来の差動増巾器を示す回路図、第3図は
CMOS構成の従来の差動増巾回路を示す回路図、
第4図は本発明の基本的構成を示すブロツク図、
第5図は本発明による出力段差動回路の回路図、
第6図は本発明の具体的実施例を示す回路図、第
7図は本発明の他の実施例を示す回路図である。
1〜10……FEI、B1〜B13……バイポー
ラトランジスタ。
Figure 1 is a circuit diagram showing a conventional differential amplifier with an NMOS configuration, Figure 2 is a circuit diagram showing a conventional differential amplifier with a bipolar transistor configuration, and Figure 3 is a circuit diagram showing a conventional differential amplifier with a bipolar transistor configuration.
A circuit diagram showing a conventional differential amplifier circuit with a CMOS configuration,
FIG. 4 is a block diagram showing the basic configuration of the present invention.
FIG. 5 is a circuit diagram of an output stage differential circuit according to the present invention,
FIG. 6 is a circuit diagram showing a specific embodiment of the invention, and FIG. 7 is a circuit diagram showing another embodiment of the invention. 1-10...FEI, B1-B13...Bipolar transistor.
Claims (1)
電極が接続された第1および第2の駆動用トラン
ジスタと、該第1および第2の駆動用トランジス
タの各共通電極に電流を供給する第1の電流源
と、前記第1および第2の駆動用トランジスタの
各出力電極にそれぞれ接続された第1および第2
の能動負荷と、前記第1および第2の駆動用トラ
ンジスタと前記第1の電流源と前記第1および第
2の能動負荷とを相互接続して第1および第2の
差動出力を得る第1の差動増幅回路を形成する接
続手段と、前記第1および第2の差動出力をそれ
ぞれ制御電極に受ける第3および第4の駆動用ト
ランジスタと、該第3および第4の駆動用トラン
ジスタの各出力電極にそれぞれ接続された第3お
よび第4の能動負荷と、前記第3および第4の駆
動用トランジスタの前記各出力電極に電気的に接
続されて互いに相補な出力信号を得る第1および
第2の出力端子と、共通電極および制御電極が前
記第3の駆動用トランジスタの共通電極および制
御電極にそれぞれ接続された第1の電流センス用
トランジスタと、共通電極および制御電極が前記
第4の駆動用トランジスタの共通電極および制御
電極にそれぞれ接続された第2の電流センス用ト
ランジスタと、前記第1および第2の電流センス
用トランジスタの各出力電極に得られる電流の和
に応じて前記第1の能動負荷の電流を制御する制
御手段とを有することを特徴とする差動増幅器。1 first and second driving transistors having control electrodes connected to the first and second input terminals, respectively; and a first supplying current to each common electrode of the first and second driving transistors. a current source, and first and second transistors connected to respective output electrodes of the first and second driving transistors.
an active load, the first and second driving transistors, the first current source, and the first and second active loads are interconnected to obtain first and second differential outputs. a connecting means forming a differential amplifier circuit; third and fourth driving transistors each receiving the first and second differential outputs on control electrodes; and the third and fourth driving transistors. and a first active load electrically connected to each of the output electrodes of the third and fourth driving transistors to obtain mutually complementary output signals. and a second output terminal, a first current sensing transistor whose common electrode and control electrode are respectively connected to the common electrode and control electrode of the third driving transistor, and a first current sensing transistor whose common electrode and control electrode are respectively connected to the common electrode and control electrode of the third driving transistor; A second current sensing transistor connected to the common electrode and a control electrode of the driving transistor, respectively, and a current obtained in the output electrodes of the first and second current sensing transistors. 1. A differential amplifier comprising: control means for controlling the current of one active load.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004312A JPS60148209A (en) | 1984-01-13 | 1984-01-13 | Differential amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004312A JPS60148209A (en) | 1984-01-13 | 1984-01-13 | Differential amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60148209A JPS60148209A (en) | 1985-08-05 |
| JPH0244404B2 true JPH0244404B2 (en) | 1990-10-03 |
Family
ID=11580961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59004312A Granted JPS60148209A (en) | 1984-01-13 | 1984-01-13 | Differential amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60148209A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990018189A (en) * | 1997-08-26 | 1999-03-15 | 윤종용 | Folded cascode op amp circuit |
| JP2003069353A (en) * | 2001-08-24 | 2003-03-07 | Toshiba Corp | Differential amplifier circuit and semiconductor integrated circuit for driving liquid crystal display device |
| JP4806289B2 (en) * | 2006-05-09 | 2011-11-02 | 川崎マイクロエレクトロニクス株式会社 | Input buffer |
-
1984
- 1984-01-13 JP JP59004312A patent/JPS60148209A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60148209A (en) | 1985-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0168198B1 (en) | Cmos operational amplifier | |
| EP0617508B1 (en) | Combination drive-summing circuit for rail-to-rail differential amplifier | |
| US6265941B1 (en) | Balanced differential amplifier having common mode feedback with kick-start | |
| US5608352A (en) | Differential input circuit capable of broadening operation range of input common mode potential | |
| EP0037406B1 (en) | Cmos operational amplifier with reduced power dissipation | |
| JP2688477B2 (en) | amplifier | |
| US4459555A (en) | MOS Differential amplifier gain control circuit | |
| US4335355A (en) | CMOS Operational amplifier with reduced power dissipation | |
| US5475343A (en) | Class AB complementary output stage | |
| US5489876A (en) | Low-noise amplifier with high input impedance, particularly for microphones | |
| JPS61232708A (en) | Balance type differential amplifier | |
| US4736117A (en) | VDS clamp for limiting impact ionization in high density CMOS devices | |
| JPH0715249A (en) | Amplifier | |
| WO1997030512A1 (en) | High swing, low power general purpose operational ampliflier | |
| WO1997030512A9 (en) | High swing, low power general purpose operational ampliflier | |
| CA1169488A (en) | Differential load circuit equipped with field-effect transistors | |
| US4924113A (en) | Transistor base current compensation circuitry | |
| US20030038678A1 (en) | Differential amplifier with gain substantially independent of temperature | |
| JP2752338B2 (en) | Operational amplifier convertible to different configurations | |
| WO2001076346A2 (en) | High-gain, very wide common mode range, self biased operational amplifier | |
| US6937100B2 (en) | Amplifier circuit with common mode feedback | |
| JPH0244404B2 (en) | ||
| US6496066B2 (en) | Fully differential operational amplifier of the folded cascode type | |
| US6542034B2 (en) | Operational amplifier with high gain and symmetrical output-current capability | |
| US4841254A (en) | CMOS precision gain amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |