JPH024675B2 - - Google Patents
Info
- Publication number
- JPH024675B2 JPH024675B2 JP2061383A JP2061383A JPH024675B2 JP H024675 B2 JPH024675 B2 JP H024675B2 JP 2061383 A JP2061383 A JP 2061383A JP 2061383 A JP2061383 A JP 2061383A JP H024675 B2 JPH024675 B2 JP H024675B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cylindrical
- thin film
- metal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 15
- 238000007738 vacuum evaporation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 230000003685 thermal hair damage Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000000476 thermogenic effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高分子材料より成る基板上に金属薄膜
を形成する際の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a manufacturing method for forming a metal thin film on a substrate made of a polymeric material.
従来例の構成とその問題点
高分子材料より成る基板上に真空蒸着法によつ
て金属薄膜を形成する方法としては、この基板を
円筒状キヤンに沿わせて走行させつつ蒸着する方
法が最も優れている。第1図にこのような方法を
用いた真空蒸着装置の内部構造の概略を示す。高
分子材料より成る基板1は円筒状キヤン2の周側
面に沿つて矢印の方向に走行する。この基板1上
に蒸発源5によつて金属薄膜が形成される。第1
図中3は供給ロール、4は巻取ロールである。こ
のような真空蒸着装置を用いて高分子材料より成
る基板上に金属薄膜を形成する際に、金属薄膜の
膜厚が薄く数100Å以下の場合には安定した金属
薄膜が形成されるが、膜厚が数100Å以上の金属
薄膜を数100Å/秒以上の高堆積速度で形成する
場合には蒸発源かの輻射熱や蒸発原子の凝縮熱等
の原因により基板の熱変形や熱分解を生じ安定し
た金属薄膜を形成することができない。従つて数
100Å以上の膜厚の金属薄膜を形成する際にはこ
れらの熱的ダメージを避けるために何らかの対策
を採らなくてはならない。従来このような対策の
一つとして、熱的ダメージを受けずにすむ数10Å
以下の膜厚の金属薄膜を蒸着し、その上にこの金
属薄膜と円筒状キヤンとの間に電位差を設けて数
100Å以上の膜厚の金属薄膜を数100Å/秒以上の
高堆積速度で形成する方法が考えられている。第
2図にこのような方法を用いた真空蒸着装置の内
部構造の概略を示す。金属薄膜の蒸着された高分
子材料より成る基板6は、その金属面を金属ロー
ラー7に接して走行しこの金属ローラー7を通じ
て電源8により接地された円筒状キヤン2との間
に電位差が与えられる。このようにして基板6と
円筒状キヤン2との間に電位差を設けると静電引
力により基板6が円筒状キヤン2に張り付く。基
板6が円筒状キヤン2に張り付いた状態で蒸発源
5によつて金属薄膜を形成すると、数100Å以上
の膜厚の金属薄膜を数10Å/秒以上の高堆積速度
で形成する際に、基板6が受ける蒸発源からの輻
射熱や蒸発原子の凝縮熱等の熱を、円筒状キヤン
2へ熱伝導により拡散することができ、基板6は
熱変形や熱分解を生じない。Structure of the conventional example and its problems The best method for forming a metal thin film on a substrate made of a polymer material by vacuum evaporation is to deposit the metal film while moving the substrate along a cylindrical can. ing. FIG. 1 schematically shows the internal structure of a vacuum evaporation apparatus using such a method. A substrate 1 made of a polymeric material runs along the circumferential side of a cylindrical can 2 in the direction of the arrow. A metal thin film is formed on this substrate 1 by the evaporation source 5 . 1st
In the figure, 3 is a supply roll, and 4 is a take-up roll. When forming a metal thin film on a substrate made of a polymeric material using such a vacuum evaporation device, a stable metal thin film is formed if the metal thin film is thin, several hundred angstroms or less, but the film is When a metal thin film with a thickness of several hundred Å or more is formed at a high deposition rate of several hundred Å/second or more, the substrate may undergo thermal deformation or thermal decomposition due to radiant heat from the evaporation source or condensation heat of evaporated atoms, resulting in a stable film. It is not possible to form a metal thin film. therefore number
When forming a metal thin film with a thickness of 100 Å or more, it is necessary to take some measures to avoid such thermal damage. Conventionally, one such countermeasure is to reduce heat damage by several tens of Å, which prevents thermal damage.
A thin metal film with the following thickness is deposited, and a potential difference is created between this thin metal film and the cylindrical can.
A method of forming a thin metal film with a thickness of 100 Å or more at a high deposition rate of several 100 Å/second or more has been considered. FIG. 2 schematically shows the internal structure of a vacuum evaporation apparatus using such a method. A substrate 6 made of a polymer material on which a metal thin film is deposited runs on its metal surface in contact with a metal roller 7, and a potential difference is applied between the substrate 6 and the grounded cylindrical can 2 by a power source 8 through the metal roller 7. . When a potential difference is established between the substrate 6 and the cylindrical can 2 in this manner, the substrate 6 sticks to the cylindrical can 2 due to electrostatic attraction. When a thin metal film is formed using the evaporation source 5 while the substrate 6 is stuck to the cylindrical can 2, a thin metal film with a thickness of several hundred Å or more is formed at a high deposition rate of several tens of Å/second or more. The heat received by the substrate 6, such as radiant heat from the evaporation source and condensation heat of evaporated atoms, can be diffused into the cylindrical can 2 by thermal conduction, and the substrate 6 does not undergo thermal deformation or thermal decomposition.
以上のように円筒状キヤンと基板との間に電位
差を設けることにより、安定に膜を形成すること
ができるが、第2図のような方法では基板上にあ
らかじめ金属薄膜を蒸着し基板上に導電性を持つ
層を形成しておかなくてはならず、高分子材料よ
り成る基板上に直接膜厚が数100Å以上の安定し
た金属薄膜を数100Å/秒以上の高堆積速度で蒸
着するとは不可能である。 As described above, by creating a potential difference between the cylindrical can and the substrate, it is possible to form a stable film, but in the method shown in Figure 2, a thin metal film is vapor-deposited on the substrate in advance. A conductive layer must be formed in advance, and it is difficult to deposit a stable metal thin film with a thickness of several hundred angstroms or more directly onto a substrate made of a polymeric material at a high deposition rate of several hundred angstroms per second or more. It's impossible.
発明の目的
本発明は真空蒸着法により基板に熱変形や熱分
解及びしわを生じさせずに金属薄膜を作製する方
法を提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a method for producing a metal thin film using a vacuum evaporation method without causing thermal deformation, thermal decomposition, or wrinkles on a substrate.
発明の構成
本発明は円筒状キヤンの周側面に沿つて走行し
つつある高分子材料より成る基板上に直接金属薄
膜を真空蒸着法によつて形成する際に、形成され
た金属薄膜と円筒状キヤンとの間に電位差を設け
ることを特徴とする金属薄膜の製造方法であり、
本発明の方法により高分子材料から成る基板に熱
変形や熱分解及びしわを生じさせずに金属薄膜を
形成することが可能である。Structure of the Invention The present invention is directed to the formation of a cylindrical thin film and a cylindrical thin film when a thin metal film is directly formed by vacuum evaporation on a substrate made of a polymeric material that is running along the circumferential side of a cylindrical can. A method for producing a metal thin film characterized by providing a potential difference between the capacitor and the capacitor.
By the method of the present invention, it is possible to form a metal thin film on a substrate made of a polymeric material without causing thermal deformation, thermal decomposition, or wrinkles.
実施例の説明
第3図に本発明の方法を用いた真空蒸着装置の
内部構造の概略を示す。第3図において第1図、
第2図と同一物は同一番号を付して説明を省略す
る。第3図の装置の特徴とするところは、金属ロ
ーラー7の位置が第2図に示す供給ロール3と円
筒状キヤン2の間から円筒状キヤン2と巻取ロー
ル4との間へ移つた点である。高分子材料より成
る板上に直接金属薄膜を形成する場合、従来の第
2図に示されたような方法では基板上に導電性を
持つ層が存在しないため円筒状キヤンとの間に電
位差を設けることができず基板を静電引力で張り
付けて熱的ダメージから守ることは不可能であつ
た。しかし、第3図に示した本発明による方法で
は金属ローラー7が円筒状キヤン2と巻取ロール
4との間に位置するため蒸着された金属薄膜が基
板上に存在するので金属ローラー7を通じて基板
上の金属薄膜と円筒状キヤンとの間に電位差を設
けることができ基板6を静電引力によつて円筒状
キヤンに張り付けて熱的ダメージから守ることが
できる。本発明の方法では蒸発源によつて形成さ
れた金属層を通じて電位差を設けているため、基
板が円筒状キヤンに張り付くのは、第3図で円筒
状キヤンの中心と蒸発源とを結ぶ直接から右側即
ち巻取ロール側でしかも基板6が円筒状キヤン2
に接している部分のみであり、同直線から左側即
ち供給ロール側は金属層が未だ存在しないため円
筒状キヤンとの間に電位差を設けることができず
張り付いていない。けれども、基板6が受ける熱
は熱発源5からの輻射熱や熱発原子の凝縮熱が主
であるので蒸発源5より供給ロール3側では基板
6は円筒状キヤン2に張り付いていなくても熱的
ダメージを受けない。対策を講じていなければ熱
的ダメージを受ける。蒸発源5から巻取ロール4
側では、基板6は円筒状キヤン2に張り付いてい
るため熱的ダメージから守れるので、本発明の方
法で真空蒸着の際の熱的ダメージから基板6を守
ることができる。DESCRIPTION OF EMBODIMENTS FIG. 3 schematically shows the internal structure of a vacuum evaporation apparatus using the method of the present invention. In Figure 3, Figure 1,
Components that are the same as those in FIG. 2 are given the same numbers and their explanations will be omitted. A feature of the apparatus shown in FIG. 3 is that the position of the metal roller 7 has been shifted from between the supply roll 3 and the cylindrical can 2 shown in FIG. 2 to between the cylindrical can 2 and the take-up roll 4. It is. When forming a metal thin film directly on a plate made of a polymer material, the conventional method shown in Figure 2 requires a potential difference between the substrate and the cylindrical can because there is no conductive layer on the substrate. It has been impossible to protect the substrate from thermal damage by attaching it to the substrate using electrostatic attraction. However, in the method according to the present invention shown in FIG. 3, since the metal roller 7 is located between the cylindrical can 2 and the take-up roll 4, the deposited metal thin film is present on the substrate. A potential difference can be provided between the upper metal thin film and the cylindrical can, and the substrate 6 can be stuck to the cylindrical can by electrostatic attraction to protect it from thermal damage. In the method of the present invention, a potential difference is provided through the metal layer formed by the evaporation source, so that the substrate sticks to the cylindrical can from the direct connection between the center of the cylindrical can and the evaporation source as shown in FIG. On the right side, that is, on the take-up roll side, and the substrate 6 is the cylindrical can 2.
Since there is no metal layer yet on the left side of the straight line, that is, on the supply roll side, it is not possible to create a potential difference between the metal layer and the cylindrical can, and the metal layer does not stick to the can. However, since the heat that the substrate 6 receives is mainly radiant heat from the heat source 5 and condensation heat of thermogenic atoms, the substrate 6 receives thermal heat even if it is not attached to the cylindrical can 2 on the supply roll 3 side from the evaporation source 5. Take no damage. If precautions are not taken, thermal damage will occur. From the evaporation source 5 to the take-up roll 4
On the side, the substrate 6 is protected from thermal damage because it sticks to the cylindrical can 2, so the method of the invention can protect the substrate 6 from thermal damage during vacuum deposition.
次に本発明の具体的な実施例を第3図を用いて
説明する。金属ローラー7に電源8によつて
100Vの電圧を印加している。第3図では直流電
源が描かれているが交流電源でも良い。円筒状キ
ヤン2は接地されている。このような装置を用い
て膜厚12μmのポリエチレンテレフタレート基板
上に金属薄膜として膜厚1000ÅのTi膜4000Å/
秒の堆積速度で形成した。作成された膜は非常に
安定であり熱負け及びしわは見られなかつた。一
方、金属ローラー7に電圧を印加しなかつた場合
には基板に熱分解を生じ穴があいた。 Next, a specific embodiment of the present invention will be described using FIG. 3. Power supply 8 to metal roller 7
A voltage of 100V is applied. Although a DC power source is shown in Figure 3, an AC power source may also be used. The cylindrical can 2 is grounded. Using such a device, a Ti film of 4000Å/1000Å thick was deposited as a metal thin film on a polyethylene terephthalate substrate with a thickness of 12μm.
Formed at a deposition rate of seconds. The produced film was very stable and showed no heat loss or wrinkles. On the other hand, when no voltage was applied to the metal roller 7, the substrate was thermally decomposed and holes were formed.
発明の効果
以上のように本発明の方法により静電引力で基
板を円筒状キヤンに張り付けることが可能とな
り、熱まけ、しわ等のない安定な金属薄膜を形成
することができるものである。そして、蒸着され
た金属薄膜を電極として利用できるので基板の表
面をあらかじめ導電性にしておく必要がないもの
である。Effects of the Invention As described above, the method of the present invention makes it possible to attach a substrate to a cylindrical can using electrostatic attraction, thereby forming a stable metal thin film that is free from heat build-up and wrinkles. Furthermore, since the deposited metal thin film can be used as an electrode, there is no need to make the surface of the substrate conductive in advance.
第1図、第2図はそれぞれ従来例における金属
薄膜の製造方法の真空蒸着装置の内部構造の概略
図、第3図は本発明の金属薄膜の製造方法におけ
る真空蒸着装置の内部構造の概略図である。
1……基板、2……円筒状キヤン、3……供給
ロール、4……巻取ロール、5……蒸発源、6…
…金属薄膜を蒸着された基板、7……金属ローラ
ー、8……基板に電圧を印加するための電源。
1 and 2 are schematic diagrams of the internal structure of a vacuum evaporation apparatus in a conventional method for producing a metal thin film, respectively, and FIG. 3 is a schematic diagram of an internal structure of a vacuum evaporation apparatus in a method for producing a metal thin film according to the present invention. It is. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Cylindrical can, 3... Supply roll, 4... Take-up roll, 5... Evaporation source, 6...
...Substrate on which a metal thin film is deposited, 7.. Metal roller, 8.. Power source for applying voltage to the substrate.
Claims (1)
る高分子材料より成る基板上に直接金属薄膜を真
空蒸着法によつて形成する際に、形成された金属
薄膜と上記円筒状キヤンとの間に電位差を設ける
ことを特徴とする金属薄膜の製造方法。1. When a thin metal film is directly formed by vacuum evaporation on a substrate made of a polymeric material that is running along the circumferential side of a cylindrical can, the gap between the formed thin metal film and the cylindrical can is A method for producing a metal thin film, characterized by providing a potential difference between the two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58020613A JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Method for producing metal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58020613A JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Method for producing metal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59147023A JPS59147023A (en) | 1984-08-23 |
| JPH024675B2 true JPH024675B2 (en) | 1990-01-30 |
Family
ID=12032104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58020613A Granted JPS59147023A (en) | 1983-02-10 | 1983-02-10 | Method for producing metal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59147023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010163693A (en) * | 2010-04-12 | 2010-07-29 | Ulvac Japan Ltd | Winding type vacuum deposition method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318064A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
| JPS6318063A (en) * | 1986-07-10 | 1988-01-25 | Nippon Kokan Kk <Nkk> | Vacuum deposition method |
| JP2013036104A (en) * | 2011-08-10 | 2013-02-21 | Toray Advanced Film Co Ltd | Method and apparatus for forming thin film |
-
1983
- 1983-02-10 JP JP58020613A patent/JPS59147023A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010163693A (en) * | 2010-04-12 | 2010-07-29 | Ulvac Japan Ltd | Winding type vacuum deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59147023A (en) | 1984-08-23 |
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