JPH0247424B2 - - Google Patents
Info
- Publication number
- JPH0247424B2 JPH0247424B2 JP56162280A JP16228081A JPH0247424B2 JP H0247424 B2 JPH0247424 B2 JP H0247424B2 JP 56162280 A JP56162280 A JP 56162280A JP 16228081 A JP16228081 A JP 16228081A JP H0247424 B2 JPH0247424 B2 JP H0247424B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- composition
- porcelain
- sintered
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 4
- 229910020698 PbZrO3 Inorganic materials 0.000 claims 1
- NKTZYSOLHFIEMF-UHFFFAOYSA-N dioxido(dioxo)tungsten;lead(2+) Chemical compound [Pb+2].[O-][W]([O-])(=O)=O NKTZYSOLHFIEMF-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 239000011572 manganese Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- UVTGXFAWNQTDBG-UHFFFAOYSA-N [Fe].[Pb] Chemical compound [Fe].[Pb] UVTGXFAWNQTDBG-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は、磁器組成物、特に高誘電率で焼結温
度の低く機械的強度の高い磁器組成物に関するも
のである。
従来高誘電率誘電体として、チタン酸バリウム
(BaTiO3)を主成分とするものが広く実用化さ
れていることは周知のとおりである。しかしなが
らBaTiO3を主成分とするものは焼結温度が通常
1300℃〜1400℃の高温であり、特に積層コンデン
サの場合には、この焼結温度に適した内部電極と
して、主成分が白金またはパラジウム等の高価な
貴金属を使用しなければならないという欠点を有
していた。
このため銀、ニツケル等を主成分とする安価な
内部電極を使用可能とするためには、焼結温度が
できるだけ低温、特に960℃以下の温度で焼結で
きる誘電体が強く要望されていた。
本発明の目的は、960℃以下の温度で焼結でき、
誘電率が高く誘電損失が小さく、しかも比抵抗の
高い磁器組成物を提供することにある。更に本発
明の目的は、焼結磁器の粒径成長を抑制し、かつ
焼結密度を高めて、機械的強度を増大させ、信頼
性の高い積層コンデンサー用組成物を提供するこ
とにある。すなわち、チツプコンデンサの場合は
基板に実装した時の基板とセラミツクの熱膨張係
数の違いにより、チツプコンデンサに機械的な歪
がかかり、微少なクラツクの発生やひどい場合に
はチツプコンデンサが破損する場合が生じる。ま
たエポキシ系樹脂等を外装したデイツプコンデン
サの場合にも外装樹脂の応力で磁器にクラツクを
発生させる場合がある。いずれの場合も磁器の抗
折強度が低いほどクラツクが入りやすく、破損し
やすく信頼性が低くなる。したがつて、セラミツ
クの機械的強度をできるだけ増大させることは実
用上、極めて重要なことである。
ところで、960℃以下の低温で焼結できる磁器
組成物の一つとしてPb(Fe2/3W1/3)O3−PbZrO3
からなる二成分組成物は既に提案されている(特
開昭55−21850)。しかしながら上記二成分組成物
は誘電損失が高く、しかも比抵抗が低く、より改
善が望まれていた。このため第三成分としてPb
(Mn2/3W1/3)O3などを添加し、上記欠点を改善
する提案がなされている(特開昭55−23058)。
しかしながら上記Pb(Fe2/3W1/3)O3−PbZrO3
およびこれにPb(Mn2/3W1/3)O3などを添加した
ものはいずれも磁器の抗折強度が低く、積層コン
デンサ用磁器組成物としての用途は自ら狭い範囲
に限定せざるを得なかつた。
本発明は、以上の点にかんがみ、960℃以下の
温度で焼結でき、機械的強度が高く、しかも比抵
抗が高く、かつ誘電率が高く、誘電率の温度変化
率も良好で、誘電損失の小さい磁器組成物を提供
するものである。
すなわち本発明は鉄・タングステン酸鉛〔Pb
(Fe2/3W1/3)O3〕、ジルコン酸鉛〔PbZrO3〕およ
びマンガン・アンチモン酸鉛〔Pb(Mn1/3Sb2/3)
O3〕からなる三成分組成物を〔Pb(Fe2/3W1/3)
O3〕x〔PbZrO3〕y〔Pb(Mn1/3Sb2/3)O3〕zと
表わしたときに(ただしx+y+z=1.000)、配
合比x,y,zがそれぞれ、0.500≦x≦0.800、
0.150≦y≦0.498、0.002≦z≦0.050の範囲にあ
ることを特徴とするものである。
以下本発明を実施例により詳細に説明する。
出発原料として酸化鋭(PbO)、酸化鉄
(Fe2O3)、酸化タングステン(WO3)、酸化ジル
コニウム(ZrO2)酸化アンチモン(Sb2O3)およ
び炭酸マンガン(MnCO3)を使用し、表に示し
た配合比に秤量する。なおMnCO3はMnOに換算
して必要量得るようにした。次にボールミル中で
湿式混合した後700〜800℃で予焼し、その後
0.7ton/Km2の圧力で直径16mm、厚さ約10mmの円板
状に加圧成形し、880℃〜950℃で焼結した。得ら
れた焼結体を切断し、厚さ1mmの円板4枚と厚さ
0.5mmの円板5枚を得た。厚さ1mmの円板の両面
に600℃で銀電極を焼付け電気的特性を評価した。
誘電率および誘電損失は周波数1kHz温度20℃で
測定した。絶縁抵抗は50Vの電圧を印加し、1分
後温度20℃で測定した。温度特性は、室温20℃を
基準として+85℃での容量変化率を求めた。
機械的性質を抗折強度で評価するため、0.5mm
の円板から巾2mm、長さ約13mmの矩形板を切り出
した。支点間距離を9mmにとり三点法で破壊荷重
Pm〔Kg〕を測定し、τ=3/2Pml/Wt2〔Kg/cm2〕な
る
式により抗折強度を求めた。ただし、lは支点間
距離、tは試料の厚み、wは試料の巾である。電
気的特性は試料4点の平均値、抗折強度は試料10
点の平均値より求めた。このようにして得られた
磁器の配合比と諸特性の関係を次表に示す。
The present invention relates to a porcelain composition, particularly a porcelain composition with a high dielectric constant, low sintering temperature, and high mechanical strength. It is well known that dielectrics containing barium titanate (BaTiO 3 ) as a main component have been widely put into practical use as conventional high-permittivity dielectrics. However, for materials whose main component is BaTiO 3 , the sintering temperature is usually
The high temperature is 1300°C to 1400°C, and especially in the case of multilayer capacitors, the disadvantage is that an expensive noble metal such as platinum or palladium must be used as the main component for internal electrodes suitable for this sintering temperature. Was. Therefore, in order to make it possible to use inexpensive internal electrodes mainly composed of silver, nickel, etc., there has been a strong demand for a dielectric material that can be sintered at as low a sintering temperature as possible, particularly at a temperature of 960° C. or lower. The object of the present invention is to be able to sinter at a temperature of 960°C or less,
The object of the present invention is to provide a ceramic composition having a high dielectric constant, low dielectric loss, and high specific resistance. A further object of the present invention is to provide a composition for a multilayer capacitor that suppresses grain size growth of sintered porcelain, increases sintered density, increases mechanical strength, and has high reliability. In other words, when a chip capacitor is mounted on a board, mechanical strain is applied to the chip capacitor due to the difference in thermal expansion coefficient between the board and the ceramic, which can cause minute cracks or, in severe cases, damage to the chip capacitor. occurs. Furthermore, in the case of dip capacitors coated with epoxy resin or the like, cracks may occur in the porcelain due to the stress of the coated resin. In either case, the lower the bending strength of the porcelain, the more likely it will be cracked and damaged, and the reliability will be lower. Therefore, it is extremely important in practice to increase the mechanical strength of ceramics as much as possible. By the way, Pb(Fe 2/3 W 1/3 ) O 3 −PbZrO 3 is one of the porcelain compositions that can be sintered at a low temperature of 960°C or lower.
A two-component composition comprising: However, the above-mentioned two-component composition has a high dielectric loss and a low specific resistance, and further improvement has been desired. Therefore, Pb is used as the third component.
A proposal has been made to improve the above-mentioned drawbacks by adding (Mn 2/3 W 1/3 )O 3 (Japanese Patent Laid-Open No. 55-23058). However, the above Pb(Fe 2/3 W 1/3 )O 3 −PbZrO 3
and Pb(Mn 2/3 W 1/3 ) O 3 added to it, the porcelain has a low bending strength, and its use as a ceramic composition for multilayer capacitors must be limited to a narrow range. I didn't get it. In view of the above points, the present invention can be sintered at a temperature of 960°C or less, has high mechanical strength, high specific resistance, high dielectric constant, good temperature change rate of dielectric constant, and has dielectric loss. This provides a small porcelain composition. That is, the present invention uses iron-lead tungstate [Pb
(Fe 2/3 W 1/3 )O 3 ], lead zirconate [PbZrO 3 ] and lead manganese antimonate [Pb(Mn 1/3 Sb 2/3 )
A ternary composition consisting of [Pb(Fe 2/3 W 1/3 )
When expressed as O 3 ] x [ PbZrO 3 ] y [ Pb (Mn 1/3 Sb 2/3 ) O 3 ] z (where x + y + z = 1.000), the compounding ratios x, y, and z are each 0.500≦x ≦0.800,
It is characterized by being in the range of 0.150≦y≦0.498 and 0.002≦z≦0.050. The present invention will be explained in detail below with reference to Examples. Using sharp oxide (PbO), iron oxide (Fe 2 O 3 ), tungsten oxide (WO 3 ), zirconium oxide (ZrO 2 ), antimony oxide (Sb 2 O 3 ) and manganese carbonate (MnCO 3 ) as starting materials, Weigh according to the mixing ratio shown in the table. Note that MnCO 3 was converted into MnO to obtain the required amount. Next, after wet mixing in a ball mill, pre-baking at 700-800℃, then
It was pressure-molded into a disc shape with a diameter of 16 mm and a thickness of about 10 mm at a pressure of 0.7 ton/Km 2 and sintered at 880°C to 950°C. The obtained sintered body was cut into 4 discs with a thickness of 1 mm.
Five 0.5 mm disks were obtained. Silver electrodes were baked on both sides of a 1 mm thick disk at 600°C to evaluate the electrical characteristics.
The dielectric constant and dielectric loss were measured at a frequency of 1kHz and a temperature of 20℃. Insulation resistance was measured by applying a voltage of 50V and after 1 minute at a temperature of 20°C. Regarding the temperature characteristics, the rate of change in capacity at +85°C was determined based on the room temperature of 20°C. 0.5 mm to evaluate mechanical properties by bending strength
A rectangular plate with a width of 2 mm and a length of about 13 mm was cut out from the disk. Determine the breaking load using the three-point method with a distance between fulcrums of 9 mm.
Pm [Kg] was measured, and the bending strength was determined using the formula: τ=3/2Pml/Wt 2 [Kg/cm 2 ]. Here, l is the distance between the supporting points, t is the thickness of the sample, and w is the width of the sample. Electrical properties are average values of 4 samples, bending strength is sample 10
It was calculated from the average value of the points. The relationship between the blending ratio and various properties of the porcelain thus obtained is shown in the following table.
【表】【table】
【表】
表に示した結果から明らかなように、本発明の
Pb(Fe2/3W1/3)O3−PbZrO3−Pb(Mn1/3Sb2/3)
O3からなる三成分磁器組成物は960℃以下の低温
で焼結でき、Pb(Fe2/3W1/3)O3−PbZrO3に比較
し、抗折強度が大きく、比抵抗が高く、誘電損失
が小さい。しかも誘電率の温度変化率も良好で、
本発明により実用性の高い優れた積層コンデンサ
用の磁器組成物が得られることがわかる。
なお本発明の組成物を〔Pb(Fe2/3W1/3)O3〕
x〔PbZrO3〕y〔Pb(Mn1/3Sb2/3)O3〕zと表わ
した時に、x,y,zがそれぞれ0.50≦x≦
0.80、0.15≦y≦0.498、0.002≦z≦0.05の範囲に
限定される(ただしx+y+z=1.000)。x<
0.50、y>0.50ではキユリー温度が室温より大き
く高温側にずれ、x>0.80、y<0.15ではキユリ
ー温度が室温より大きく低温側にずれ、いずれも
室温での誘電率が低下する。z<0.002では抗折
強度が小さく、z>0.05では比抵抗が小さくな
る。以上の理由により上記組成範囲に限定され
る。[Table] As is clear from the results shown in the table, the present invention
Pb(Fe 2/3 W 1/3 )O 3 −PbZrO 3 −Pb(Mn 1/3 Sb 2/3 )
The three-component porcelain composition consisting of O 3 can be sintered at a low temperature of 960°C or lower, and has higher bending strength and higher specific resistance than Pb(Fe 2/3 W 1/3 ) O 3 −PbZrO 3 . , low dielectric loss. Moreover, the temperature change rate of dielectric constant is also good.
It can be seen that an excellent ceramic composition for multilayer capacitors with high practicality can be obtained by the present invention. Note that the composition of the present invention [Pb(Fe 2/3 W 1/3 ) O 3 ]
When expressed as x[PbZrO 3 ]y[Pb(Mn 1/3 Sb 2/3 )O 3 ]z, x, y, and z are each 0.50≦x≦
0.80, 0.15≦y≦0.498, 0.002≦z≦0.05 (however, x+y+z=1.000). x<
0.50 and y>0.50, the Curie temperature shifts to a higher temperature side than room temperature, and when x>0.80 and y<0.15, the Curie temperature shifts to a lower temperature side more than room temperature, and in both cases, the dielectric constant at room temperature decreases. When z<0.002, the bending strength is small, and when z>0.05, the specific resistance is small. For the above reasons, the composition is limited to the above composition range.
Claims (1)
O3〕、ジルコン酸鉛〔PbZrO3〕およびマンガ
ン・アンチモン酸鉛〔Pb(Mn1/3Sb2/3)O3〕から
なる三成分組成物を 〔Pb(Fe2/3W1/3)O3〕x〔PbZrO3〕y〔Pb(Mn1/3
Sb2/3)O3〕zと表わした時に(ただしx+y+
z=1.000)配合比X,Y,Zがそれぞれ 0.500≦x≦0.800 0.150≦y≦0.498 0.002≦z≦0.050 の範囲にあることを特徴とする磁器組成物。[Claims] 1. Iron/lead tungstate [Pb (Fe 2/3 W 1/3 )
[ Pb ( Fe 2/3 W 1/3 ) O3 ]x[ PbZrO3 ]y[Pb(Mn 1/3
Sb 2/3 ) O 3 ] When expressed as z (however, x + y +
z=1.000) A porcelain composition characterized in that the mixing ratios X, Y, and Z are in the following ranges: 0.500≦x≦0.800, 0.150≦y≦0.498, and 0.002≦z≦0.050.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56162280A JPS5864266A (en) | 1981-10-12 | 1981-10-12 | Ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56162280A JPS5864266A (en) | 1981-10-12 | 1981-10-12 | Ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5864266A JPS5864266A (en) | 1983-04-16 |
| JPH0247424B2 true JPH0247424B2 (en) | 1990-10-19 |
Family
ID=15751468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56162280A Granted JPS5864266A (en) | 1981-10-12 | 1981-10-12 | Ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5864266A (en) |
-
1981
- 1981-10-12 JP JP56162280A patent/JPS5864266A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5864266A (en) | 1983-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0247424B2 (en) | ||
| JPS6347083B2 (en) | ||
| JPS6227026B2 (en) | ||
| JPS6227029B2 (en) | ||
| JPH0237646B2 (en) | ||
| JPS6227028B2 (en) | ||
| JPS6033257A (en) | Ceramic composition | |
| JPH0127015B2 (en) | ||
| JPS6230151B2 (en) | ||
| JP2926827B2 (en) | Dielectric porcelain composition | |
| JPH0360788B2 (en) | ||
| JP2803320B2 (en) | Dielectric porcelain composition | |
| JP3319024B2 (en) | High dielectric constant dielectric porcelain composition | |
| JPS6347084B2 (en) | ||
| JPS6327301B2 (en) | ||
| JPS6256605B2 (en) | ||
| JPS6324943B2 (en) | ||
| JPS6046965A (en) | Ceramic composition | |
| JPS6227025B2 (en) | ||
| JP3301814B2 (en) | Dielectric porcelain composition | |
| JPH0127016B2 (en) | ||
| JPS6236326B2 (en) | ||
| JPS6149269B2 (en) | ||
| JPH0419648B2 (en) | ||
| JPS6346924B2 (en) |