JPH0247426B2 - - Google Patents
Info
- Publication number
- JPH0247426B2 JPH0247426B2 JP56192364A JP19236481A JPH0247426B2 JP H0247426 B2 JPH0247426 B2 JP H0247426B2 JP 56192364 A JP56192364 A JP 56192364A JP 19236481 A JP19236481 A JP 19236481A JP H0247426 B2 JPH0247426 B2 JP H0247426B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- oxide
- powder
- sintered body
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000843 powder Substances 0.000 claims description 41
- 238000005245 sintering Methods 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 3
- 229910026551 ZrC Inorganic materials 0.000 description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 3
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 description 1
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910021359 Chromium(II) silicide Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- 229910019918 CrB2 Inorganic materials 0.000 description 1
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 1
- 229910003178 Mo2C Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910005108 Ni3Si2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910006249 ZrSi Inorganic materials 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- CVTZKFWZDBJAHE-UHFFFAOYSA-N [N].N Chemical compound [N].N CVTZKFWZDBJAHE-UHFFFAOYSA-N 0.000 description 1
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 description 1
- CHXGWONBPAADHP-UHFFFAOYSA-N [Si].[Si].[Cr] Chemical compound [Si].[Si].[Cr] CHXGWONBPAADHP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- FHTCLMVMBMJAEE-UHFFFAOYSA-N bis($l^{2}-silanylidene)manganese Chemical compound [Si]=[Mn]=[Si] FHTCLMVMBMJAEE-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- LUWOVYQXZRKECH-UHFFFAOYSA-N bis($l^{2}-silanylidene)vanadium Chemical compound [Si]=[V]=[Si] LUWOVYQXZRKECH-UHFFFAOYSA-N 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- VDZMENNHPJNJPP-UHFFFAOYSA-N boranylidyneniobium Chemical compound [Nb]#B VDZMENNHPJNJPP-UHFFFAOYSA-N 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- QDMRQDKMCNPQQH-UHFFFAOYSA-N boranylidynetitanium Chemical compound [B].[Ti] QDMRQDKMCNPQQH-UHFFFAOYSA-N 0.000 description 1
- LAROCDZIZGIQGR-UHFFFAOYSA-N boron;vanadium Chemical compound B#[V]#B LAROCDZIZGIQGR-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- PYLLWONICXJARP-UHFFFAOYSA-N manganese silicon Chemical compound [Si].[Mn] PYLLWONICXJARP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- JAGQSESDQXCFCH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo].[Mo] JAGQSESDQXCFCH-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910021355 zirconium silicide Inorganic materials 0.000 description 1
- 229910021354 zirconium(IV) silicide Inorganic materials 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
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Technical Field of the Invention The present invention relates to a method for manufacturing a ceramic sintered body, and more specifically, to a method for manufacturing a ceramic sintered body that has high density and has a low degree of decrease in mechanical strength at high temperatures (hereinafter referred to as high temperature strength). Regarding the method. Technical background of the invention and its problems Ceramic sintered bodies mainly composed of silicon nitride have excellent heat resistance, being able to withstand high temperatures of around 1900°C, and have excellent thermal shock resistance due to their low coefficient of thermal expansion. It also has Taking advantage of such properties, attempts have been made to apply this type of ceramic sintered body mainly composed of silicon nitride to structural parts such as gas turbine blades and nozzles that require high strength at high temperatures. Currently, such ceramic sintered bodies are made of, for example, silicon nitride.
It is manufactured using a mixture of yttrium oxide and aluminum oxide as a raw material by the so-called hot pressing method, ordinary sintering method, etc. The present inventors have previously achieved excellent properties by changing the material at grain boundaries from a glassy (amorphous) material to a Si 3 N 4 Y 2 O 3 crystal compound, for example in the hot pressing method. It was revealed that a silicon nitride-based sintered body having the following characteristics can be obtained. In addition, the present inventors have proposed a method for producing a ceramic powder material in which the amount of glassy material present in the sintered body is small, as disclosed in JP-A-54-47709 and JP-A-55-27843; Or as a ceramic powder material
It was also revealed that a sintered body with improved high-temperature strength can be obtained by using silicon nitride powder produced from Si 3 N 4 and Y 2 O 3 . However, in the above-mentioned sintering method, it is difficult to obtain a dense sintered body when using the normal sintering method, and it is difficult to obtain a sintered body with excellent mechanical strength and thermal shock resistance. It has drawbacks. In addition, when using the hot press sintering method, a sintered body with excellent mechanical strength and thermal shock resistance can be obtained, but the shape of the sintered body is restricted and it is not suitable for mass production. have. In order to eliminate these drawbacks, the present inventors further developed Si 3 N 4 âY 2 O 3 âAl 2 O 3 âAlNâ as a raw material for the sintered body in Japanese Patent Application Laid-Open No. 113674/1983.
By using TiO 2 , ZrO 2 , and MgO-based materials, it is possible to produce high-density sintered bodies with excellent mechanical strength and heat resistance comparable to sintered bodies produced by hot pressing. A sintering method was proposed. However, the sintered body obtained by this method is
The mechanical strength at around 1300°C was not necessarily satisfactory. OBJECTS OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks and to provide a method for manufacturing a ceramic sintered body that has high density and exhibits less decrease in mechanical strength at high temperatures. Summary of the Invention As a result of extensive research, the present inventors have discovered that the cause of the reduction in high-temperature strength of sintered bodies is the reaction between oxygen or silicon oxide (SiO 2 ) present in the raw material powder and sintering additives. It was found that the product is a glassy (amorphous) low melting point grain boundary phase. They discovered that the above objective could be achieved by using ceramic raw materials that had been heat-treated in advance.
The present invention has now been completed. That is, the method for producing a ceramic sintered body of the present invention includes: 75% by weight or more of silicon nitride powder heat-treated in a non-oxidizing atmosphere: 0.1 to 10% by weight of at least one rare earth element oxide powder: 0.1-10% by weight of aluminum oxide powder: 0.1-10% by weight of aluminum nitride powder: and respective oxides, carbides, silicides and borides of titanium, zirconium, chromium, hafnium, tantalum, niobium, molybdenum, vanadium and tungsten;
A mixed powder consisting of 0.05 to 5% by weight of one or more powders selected from the group consisting of oxides and silicides of magnesium, nickel, cobalt, manganese and beryllium; and boron carbide is molded. This method is characterized in that the molded body is sintered in a non-oxidizing atmosphere. In the following, the invention will be explained in more detail. The heat treatment of silicon nitride (Si 3 N 4 ) powder in the present invention is carried out in a non-oxidizing atmosphere, for example, by α
The mold silicon nitride powder is heated at a temperature range of 1400 to 1800°C, preferably 1600 to 1700°C, for about 30 minutes to 2 hours. As a non-oxidizing atmosphere,
Examples include nitrogen, argon, carbon monoxide, nitrogen-ammonia gas, and the like. By performing such heat treatment, oxygen or silicon oxide attached or adsorbed to the silicon nitride powder is desorbed, and a silicon nitride powder whose concentration is significantly reduced is obtained. Therefore, in a sintered body using silicon nitride powder subjected to such treatment, the amount of glassy (amorphous) material produced by the reaction between the additive (sintering aid) and oxygen or silicon oxide is small. Since it is removed or extremely reduced, its mechanical strength at around 1300°C is improved. The silicon nitride powder is blended in an amount of 75% by weight or more, preferably 80% by weight or more.
If the amount of silicon nitride powder is less than 75% by weight, no improvement in the high temperature strength of the resulting ceramic sintered body will be observed. Examples of rare earth element oxides used in the present invention include yttrium oxide (Y 2 O 3 ),
Lanthanum oxide (La 2 O 3 ), cerium oxide (CeO 2 ),
Praseodymium oxide (Pr 2 O 3 ), neodymium oxide (Nb 2 O 3 ), promethium oxide (Pm 2 O 3 ), samarium oxide (Sm 2 O 3 ), europium oxide (En 2 O 3 ), gadolinium oxide (Gd 2 O 3 ), terbium oxide (Tb 2 O 3 ), dysprosium oxide (Dy 2 O 3 ), holmium oxide (Ho 2 O 3 ), erbium oxide (Er 2 O 3 ), thulium oxide (Tm 2 O 3 ) and oxide Examples include itterbium (Yb 2 O 3 ), and one or more selected from the group consisting of these are used. Among these, it is particularly preferable to use yttrium oxide. Both the rare earth element oxide and aluminum oxide (Al 2 O 3 ) function as sintering accelerators. The blending ratio of these ingredients is
When each exceeds 10% by weight, the high temperature strength of the obtained sintered body decreases. These things total 3
It is preferable to mix it in an amount of ~15% by weight. Aluminum nitride (AlN) has the function of suppressing evaporation and grain growth during the sintering process of Si 3 N 4 , which is the main component of the sintered body, and also suppresses the sintering of the entire sintered body by reacting with other components. This contributes to the promotion of
When the blending ratio of AlN exceeds 10% by weight, the high temperature strength of the obtained sintered body decreases. In the present invention, examples of the oxide, carbide, silicide, or boride of various elements added as the fifth component include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), and chromium oxide (Cr 2 O 3 ), hafnium oxide (HfO 2 ), tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ), molybdenum oxide (MoO 3 ), vanadium oxide (V 2 O 5 ), tungsten oxide (WO 3 ) Oxides such as magnesium oxide (MgO), nickel oxide (NiO), cobalt oxide (CoO), manganese oxide (MnO 2 ), and beryllium oxide (BeO); titanium carbide (TiC), zirconium carbide (ZrC), Chromium carbide (Cr 3 C 2 ),
Hafnium carbide (HfC), tantalum carbide (TaC),
Niobium carbide (NbC), molybdenum carbide ( Mo2C ),
Carbides such as vanadium carbide (VC), tungsten carbide (WC), and boron carbide (B 4 C); titanium silicide (TiSi 2 ), zirconium silicide (ZrSi 2 ), chromium silicide (CrSi 2 ), hafnium silicide (HfSi), Tantalum silicide (TaSi 2 ), niobium silicide (NbSi 2 ), molybdenum silicide (MoSi 2 ), vanadium silicide (VSi 2 ),
Silicides such as tungsten silicide (WSi 2 ), magnesium silicide (Mg 2 Si), nickel silicide (Ni 3 Si 2 ), cobalt silicide (CoSi 2 ), manganese silicide (MnSi), and beryllium silicide (BeSi 2 ); and boron Titanium boride (TiB 2 ), zirconium boride (ZrB), chromium boride (CrB 2 ), hafnium boride (HfB 2 ), tantalum boride (TaB 2 ), niobium boride (NbB 2 ), molybdenum boride ( Examples include borides such as MoB 2 ), vanadium boride (VB 2 ), and tungsten boride (WB), and one or more borides selected from the group consisting of these are used. All of these compounds have the function of promoting sintering of the sintered body, and improve the wettability of the main component, Si 3 N 4 , making the sintered body denser and shortening the sintering time. This also causes a decrease in the sintering temperature. These substances are used in a total amount of 0.05 to 5% by weight, preferably 0.1 to 3% by weight.
If the amount of these substances added is less than 0.05% by weight, the effect of the addition will not be sufficient, while if it exceeds 5% by weight, the high temperature strength of the resulting sintered body will be impaired. Mixing of powders having the above-mentioned amounts is usually done by
The method used for the mixing operation may be used, e.g.
This can be carried out using a grinding mixer such as a ball mill, and by adding a solvent such as n-butyl alcohol as necessary. Next, a binder such as paraffin is preferably added to the mixed powder thus prepared, and an appropriate pressure is applied to form a compact into a predetermined shape. In addition, if a binder is added, the temperature will be 600 to 800â.
It is preferable to perform heat treatment to volatilize and remove the binder before sintering. Furthermore, a sintered body is obtained by sintering this molded body in a non-oxidizing atmosphere. Sintering is
For example, 1500-1900â, preferably 1600-1800â
This can be done by heating. Examples of the non-oxidizing atmosphere include nitrogen, argon, and the like. In an oxidizing atmosphere, Si 3 N 4 is oxidized to form SiO 2
This is not possible because Incidentally, during this sintering, sintering may be performed in a hot press state where a pressure of 50 to 500 kg/cm 2 is applied, or in a pressurized state in a non-oxidizing gas atmosphere. Alternatively, even if sintering is performed in a pressurized atmosphere after sintering by a normal sintering method, the characteristics of the sintered body according to the present invention will not be impaired in any way. . The present invention will be explained in more detail below with reference to Examples and Reference Examples. Examples 1-12 Average particle size containing 85% alpha-phase silicon nitride
By heating 1.2ÎŒ silicon nitride powder at 1650â for 1 hour in a nitrogen atmosphere,
Silicon nitride powder with reduced oxygen and silicon oxide concentrations was obtained. Such silicon nitride powder, Y2O3 powder with average particle size 1Ό, Al2O3 powder with average particle size 0.5Ό , average particle size 1.5Ό
AlN powder and TiO 2 , ZrO 2 with an average particle size of 1Ό,
Cr2O3 , HfO2 , Ta2O5 , Nb2O5 , MoO3 , V2O5 ,
WO3 , NiO, CoO, MnO2 , BeO, TiC, TiSi2 ,
Using each powder of TiB, 12 types of mixed powders were prepared with the blending amounts (wt%) shown in the table. Each of the mixed powders was pulverized and mixed for 24 hours using a rubber lined ball mill using n-butyl alcohol as a solvent. 7% by weight of paraffin was added as a binder to the raw material powder prepared in this way, and a molding pressure of 700 kg/cm 2 was applied to the raw material powder, and the length was 60 mm.
A plate-shaped molded body having a width of 40 mm and a thickness of 10 mm was produced. The molded bodies were first heat-treated at 700°C to volatilize and remove the binder, and then sintered at 1750°C in a nitrogen gas atmosphere to obtain silicon nitride ceramic sintered bodies. Reference Examples 1 to 10 Use silicon nitride powder without heat treatment, or use Si 3 N 4 powder, Y 2 O 3 powder, Al 2 O 3 powder, AlN powder, and powder added as the fifth component. Ten types of sintered bodies having the compositions shown in the table were prepared in the same manner as in the examples except that the blending amounts were changed. The relative density and bending strength (mechanical strength) of each sintered body obtained by the above procedure were measured, and the results are also listed in the table. Note that the relative density in the table is a relative value (%) based on the theoretical density. In addition, the bending strength value is based on a 3-point bending strength test, and the sample size is 3Ã
3 x 30 (mm), test condition is crosshead speed
0.5mm/min, span 20mm, temperature is room temperature and 1300â
All measurements at each temperature were performed four times, and the average value is listed.
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ãAl2O3
ç²æ«3.5ééïŒ
ãAlNç²æ«3.5ééïŒ
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æåãšããŠãZrCãCr3C2ãHfCãTaCãNbCã
Mo2CãVCãWCãB4CãZrSi2ãCrSi2ãHfSi2ã
TaSi2ãNbSi2ãMoSi2ãVSi2ãWSi2ãMg2Siã
Ni3Si2ãCoSi2ãMnSiãBeSi2ãZrBãCrB2ã
HfB2ãTaB2ãNbB2ãMoB2ãVB2åã³WBãã
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å©ãªãã®ã§ããã[Table] As is clear from the table, the sintered body obtained by the method of the present invention has a relative density of 98% or more and a bending strength at room temperature, although it was obtained by the ordinary sintering method. It was confirmed that it has excellent properties of 80 Kg/mm 2 or more at temperature and 55 Kg/mm 2 or more at 1300°C. In addition to the above examples, the above heat treatment was performed.
Si 3 N 4 powder 86% by weight, Y 2 O 3 powder 5% by weight, Al 2 O 3
3.5% by weight of powder, 3.5% by weight of AlN powder, and 5th
Ingredients include ZrC, Cr 3 C 2 , HfC, TaC, NbC,
Mo2C , VC, WC, B4C , ZrSi2 , CrSi2 , HfSi2 ,
TaSi 2 , NbSi 2 , MoSi 2 , VSi 2 , WSi 2 , Mg 2 Si,
Ni3Si2 , CoSi2 , MnSi, BeSi2 , ZrB , CrB2 ,
A composition containing 2% by weight of one or more selected from the group consisting of HfB 2 , TaB 2 , NbB 2 , MoB 2 , VB 2 and WB was prepared in the same manner as in the example. A sintered body was obtained. When the relative density and bending strength of these sintered bodies were similarly measured, the same results as in the examples were obtained. Effects of the Invention According to the method for manufacturing a ceramic sintered body of the present invention, a ceramic sintered body with high density and less decrease in mechanical strength at high temperatures can be obtained, and the manufacturing method of the present invention Since it does not require pressurization, it is suitable for mass production and is very advantageous industrially.
Claims (1)
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補é æ¹æ³ã1 75% by weight or more of silicon nitride powder heat-treated in a non-oxidizing atmosphere: 0.1-10% by weight of oxide powder of at least one rare earth element: 0.1-10% by weight of aluminum oxide powder: 0.1% by weight of aluminum nitride powder ~10% by weight: and respective oxides, carbides, silicides and borides of titanium, zirconium, chromium, hafnium, tantalum, niobium, molybdenum, vanadium and tungsten;
A mixed powder consisting of 0.05 to 5% by weight of one or more powders selected from the group consisting of oxides and silicides of magnesium, nickel, cobalt, manganese and beryllium; and boron carbide is molded. A method for producing a ceramic sintered body, which comprises sintering a molded body in a non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192364A JPS5895655A (en) | 1981-11-30 | 1981-11-30 | Manufacture of ceramic sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192364A JPS5895655A (en) | 1981-11-30 | 1981-11-30 | Manufacture of ceramic sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895655A JPS5895655A (en) | 1983-06-07 |
| JPH0247426B2 true JPH0247426B2 (en) | 1990-10-19 |
Family
ID=16290046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192364A Granted JPS5895655A (en) | 1981-11-30 | 1981-11-30 | Manufacture of ceramic sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895655A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178647A (en) * | 1983-07-29 | 1993-01-12 | Kabushiki Kaisha Toshiba | Wear-resistant member |
| JPS6051668A (en) * | 1983-07-29 | 1985-03-23 | æ ªåŒäŒç€Ÿæ±è | Antiabrasive member |
| JPS6178657A (en) * | 1984-09-27 | 1986-04-22 | Toshiba Corp | Guide member for printer |
| JPS62278169A (en) * | 1986-05-26 | 1987-12-03 | æ±èã¿ã³ã¬ãã€æ ªåŒäŒç€Ÿ | Ceramic sintered body parts and manufacture |
| JPS63218584A (en) * | 1987-03-05 | 1988-09-12 | æ ªåŒäŒç€Ÿæ±è | Ceramic sintered body |
-
1981
- 1981-11-30 JP JP56192364A patent/JPS5895655A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5895655A (en) | 1983-06-07 |
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