JPH0247844B2 - SERAMITSUKUBARISUTA - Google Patents
SERAMITSUKUBARISUTAInfo
- Publication number
- JPH0247844B2 JPH0247844B2 JP56176000A JP17600081A JPH0247844B2 JP H0247844 B2 JPH0247844 B2 JP H0247844B2 JP 56176000 A JP56176000 A JP 56176000A JP 17600081 A JP17600081 A JP 17600081A JP H0247844 B2 JPH0247844 B2 JP H0247844B2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- ceramic
- resistant insulating
- insulating layer
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 13
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明はセラミツクバリスタに関するものであ
つて、その目的とするところは異常電圧又は過大
な侵入サージによつて破損されることのない自己
防御作用を備えたセラミツクバリスタを提供する
ことにある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ceramic varistor, and its purpose is to provide a ceramic varistor with a self-protection function that will not be damaged by abnormal voltage or excessive intrusion surge. It's about doing.
酸化亜鉛を主体とするセラミツクバリスタは、
酸化亜鉛にビスマス、アンチモン、コバルト、マ
ンガン等の金属酸化物を添加して混合成形し、
1000〜1300℃で焼結して形成され、すぐれた非直
線電圧抵抗特性を有するので各種電気回路のサー
ジ吸収器として広く用いられている。第１図は従
来のセラミツクバリスタを示している。１はセラ
ミツク基板で、その表面および裏面には、銀又は
銅、あるいはアルミニユーム等の導電性金属の焼
き付け、メツキあるいは溶射等によつて平面電極
２，２′を形成している。３，３′は平面電極２，
２′に半田付けされたリード線である。 Ceramic varistors are mainly made of zinc oxide.
Metal oxides such as bismuth, antimony, cobalt, and manganese are added to zinc oxide and mixed and molded.
It is formed by sintering at 1000-1300°C and has excellent non-linear voltage resistance characteristics, so it is widely used as a surge absorber in various electrical circuits. FIG. 1 shows a conventional ceramic varistor. Reference numeral 1 denotes a ceramic substrate, on the front and back surfaces of which planar electrodes 2, 2' are formed by baking, plating, or spraying a conductive metal such as silver, copper, or aluminum. 3, 3' are plane electrodes 2,
This is the lead wire soldered to 2'.
ところで上記構造のセラミツクバリスタは、定
格最大値以上の異常電圧が印加されたとき、ある
いは耐量以上の過大サージが侵入したときは短
絡、破壊されるので、回路に遮断器又は電流ヒユ
ーズを接続してこれを異常電圧および過大サージ
から保護している。本発明はこの点にかんがみ、
セラミツクバリスタそれ自体に異常電圧および過
大サージに対する防御機能を付与することによ
り、遮断器、電流ヒユーズ等を省略し、配線基板
を簡素化することを意図するものである。 By the way, the ceramic varistor of the above structure will short circuit or be destroyed if an abnormal voltage exceeding the maximum rated value is applied or if an excessive surge exceeding the withstand capacity enters, so connect a circuit breaker or current fuse to the circuit. This protects it from abnormal voltages and excessive surges. In view of this point, the present invention
By providing the ceramic varistor itself with a protective function against abnormal voltages and excessive surges, circuit breakers, current fuses, etc. are omitted, and the wiring board is intended to be simplified.
本発明の実施例を第２図、第３図および第４図
によつて説明する。第２図において、４は長方形
のセラミツク基板で、その表面および裏面の中央
部には若干の巾をもつ耐熱絶縁層５，５′が設け
てある。この耐熱絶縁層５，５′は耐熱ガラスあ
るいはアルミナなどの耐熱性無機絶縁材料を焼付
け、溶射などの方法によつて数十μm程度の厚さ
に形成される。第３図において、６，６′は表面
および裏面の中央部に設けた前記耐熱絶縁層５，
５′の両側に分離して設けた平面電極で、巾の狭
い渡り電極７，７′によつて連通されている。平
面電極６，６′は銀又は銅あるいはアルミニユー
ムの焼付け、メツキ、溶射などの方法によつて形
成される。渡り電極７，７′は比較的融点の低い
アルミニユーム等の易溶性金属の溶射あるいは蒸
着によつて耐熱絶縁層５，５′の上に形成され、
その厚さは数ミクロンないし30μmである。８，
８′は表面および裏面の共通電極７，７′の中心部
に半田付けされたリード線である。リード線８，
８′を半田付けしたセラミツク基板４は、その表
面をエポキシ樹脂などによつてコーテイングされ
る。第４図は本発明の他の実施例である。この実
施例は耐熱絶縁層および渡り電極を含む上記の構
造をセラミツク基板の表面にのみ設け、裏面には
第１図の平面電極２′と同様な裏面電極９を設け、
これにリード線８′が半田付けしてある。 Embodiments of the present invention will be described with reference to FIGS. 2, 3, and 4. In FIG. 2, reference numeral 4 denotes a rectangular ceramic substrate, and heat-resistant insulating layers 5, 5' having a certain width are provided at the center of its front and back surfaces. The heat-resistant insulating layers 5, 5' are formed of a heat-resistant inorganic insulating material such as heat-resistant glass or alumina to a thickness of about several tens of micrometers by baking or thermal spraying. In FIG. 3, 6 and 6' are the heat-resistant insulating layers 5 provided at the center of the front and back surfaces,
These are planar electrodes provided separately on both sides of the electrode 5', and are communicated with each other by narrow bridge electrodes 7, 7'. The plane electrodes 6, 6' are formed by baking, plating, thermal spraying, or other methods of silver, copper, or aluminum. The transition electrodes 7, 7' are formed on the heat-resistant insulating layers 5, 5' by thermal spraying or vapor deposition of easily soluble metal such as aluminum having a relatively low melting point.
Its thickness is from several microns to 30 μm. 8,
8' is a lead wire soldered to the center of the common electrodes 7, 7' on the front and back sides. Lead wire 8,
The surface of the ceramic substrate 4 to which 8' is soldered is coated with epoxy resin or the like. FIG. 4 shows another embodiment of the invention. In this embodiment, the above structure including a heat-resistant insulating layer and a transition electrode is provided only on the front surface of the ceramic substrate, and a back electrode 9 similar to the planar electrode 2' in FIG. 1 is provided on the back surface.
A lead wire 8' is soldered to this.
次に本発明のセラミツクバリスタの作用を説明
する。いま、過大サージの侵入によつて第５図に
示すようにセラミツク基板４に短絡ａが発生した
とする。このときの短絡電流はリード線８から渡
り電極７，７′を通過してリード線８′に流れるか
ら易溶性金属よりなる渡り電極７，７′は通過電
流によつて溶断される。溶断の個所はｂ又はb′若
しくはその双方である。短絡の場所がａと反対側
のa′の場合は、溶断の個所はｃ又はc′若しくはそ
の双方である。第４図の実施例の場合は、溶断の
個所はｂ又はｃのみとなる。すなわち、渡り電極
７，７′は電流ヒユーズとして作用するからその
材料、厚み、巾、長さは遮断電流によつて設定さ
れる。第１図の従来のセラミツクバリスタにおい
ては、短絡が発生すると短絡電流によつてセラミ
ツク基板に低抵抗の貫通孔を生じ、この貫通孔を
通過する過大電流のジユール熱によつてセラミツ
ク基板が焼損するが、本発明は渡り電極の溶断に
よつてこれを未然に防止するばかりでなく、短絡
が発生した後も、残りの半分がセラミツクバリス
タとしての作用を保持している。 Next, the function of the ceramic varistor of the present invention will be explained. Now, suppose that a short circuit a occurs in the ceramic substrate 4 as shown in FIG. 5 due to the intrusion of an excessive surge. At this time, the short-circuit current flows from the lead wire 8 through the transition electrodes 7, 7' to the lead wire 8', so that the transition electrodes 7, 7' made of easily soluble metal are fused by the passing current. The melting point is b or b' or both. If the short circuit is at a' on the opposite side of a, the melting point is at c or c' or both. In the case of the embodiment shown in FIG. 4, the only part that is fused is b or c. That is, since the transition electrodes 7, 7' act as current fuses, their material, thickness, width, and length are determined by the breaking current. In the conventional ceramic varistor shown in Fig. 1, when a short circuit occurs, a through hole with low resistance is created in the ceramic substrate due to the short circuit current, and the ceramic substrate is burnt out due to the excessive current passing through this through hole. However, the present invention not only prevents this from occurring by melting down the transition electrode, but also allows the remaining half to maintain its function as a ceramic varistor even after a short circuit occurs.
以上述べたように本発明のセラミツクバリスタ
は、セラミツク基板４の表面および裏面の中央部
に若干の巾をもつ耐熱絶縁層を設け、この耐熱絶
縁層の両側に分離された平面電極を前記セラミツ
ク基板４の表面および裏面に左右対称に形成し、
前記２分された平面電極を前記耐熱絶縁層の上に
形成した巾の狭い易溶性金属よりなる渡り電極よ
つて連通させ、この渡り電極の中心にリード線を
半田付けした構造を有するので、定格最大値以上
の異常電圧が印加されたとき、あるいは耐量以上
の過大サージが侵入したときには渡り電極が溶断
してセラミツクバリスタの破壊焼損を未然に防止
する。したがつて、セラミツクバリスタを保護す
るための遮断器又は電流ヒユーズの必要がないか
ら配線基板が簡素化され、冒頭で述べた本発明の
目的を達成する作用効果を有する。 As described above, in the ceramic varistor of the present invention, a heat-resistant insulating layer having a certain width is provided at the center of the front and back surfaces of the ceramic substrate 4, and planar electrodes separated on both sides of the heat-resistant insulating layer are attached to the ceramic substrate. Formed symmetrically on the front and back sides of 4,
The bisected plane electrodes are connected to each other by a narrow cross-over electrode made of easily soluble metal formed on the heat-resistant insulating layer, and a lead wire is soldered to the center of the cross-over electrode, so that the rated When an abnormal voltage exceeding the maximum value is applied, or when an excessive surge exceeding the withstand capacity enters, the crossover electrode melts to prevent destruction and burnout of the ceramic varistor. Therefore, since there is no need for a circuit breaker or a current fuse to protect the ceramic varistor, the wiring board is simplified, and this has the effect of achieving the object of the present invention as stated at the beginning.
第１図：従来のセラミツクバリスタを示す図
で、イは平面図、ロは側面図、第２図：本発明の
セラミツク基板の実施例を示す図で、イは平面
図、ロは側面図、第３図：本発明のセラミツクバ
リスタの実施例を示す図で、イは平面図、ロは側
面図、第４図：本発明のセラミツクバリスタの他
の実施例の側面図、第５図：本発明のセラミツク
バリスタの作用説明図。
記号、４……セラミツク基板、５，５′……耐
熱絶縁層、６，６′……平面電極、７，７′……渡
り電極、８，８′……リード線、９……裏面電極。
Fig. 1: A diagram showing a conventional ceramic varistor, in which A is a plan view and B is a side view. Fig. 2: A diagram showing an embodiment of the ceramic substrate of the present invention, in which A is a plan view and B is a side view. Figure 3: Diagrams showing an embodiment of the ceramic varistor of the present invention, A is a plan view, B is a side view, Figure 4: A side view of another embodiment of the ceramic varistor of the present invention, Figure 5: Main view. FIG. 2 is an explanatory diagram of the action of the ceramic varistor of the invention. Symbol, 4... Ceramic substrate, 5, 5'... Heat resistant insulating layer, 6, 6'... Planar electrode, 7, 7'... Crossover electrode, 8, 8'... Lead wire, 9... Back electrode .
Claims (1)
も一方の面の中央部に若干の幅をもつ耐熱絶縁層
を設け、この耐熱絶縁層の両側に分離された平面
電極を前記セラミツク基板面に左右対称に形成
し、前記２分された平面電極を前記耐熱絶縁層の
上に設けた幅の狭い易溶性金属よりなる渡り電極
によつて連通させ、この渡り電極の中心部に、リ
ード線を半田付けしたことを特徴とするセラミツ
クバリスタ。1. A heat-resistant insulating layer having a slight width is provided in the center of at least one of the front and back surfaces of a ceramic substrate, and planar electrodes separated on both sides of this heat-resistant insulating layer are formed symmetrically on the surface of the ceramic substrate. , the bisected plane electrodes are communicated with each other by a narrow cross-over electrode made of an easily soluble metal provided on the heat-resistant insulating layer, and a lead wire is soldered to the center of the cross-over electrode. Ceramic barista features.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56176000A JPH0247844B2 (en) | 1981-11-02 | 1981-11-02 | SERAMITSUKUBARISUTA |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56176000A JPH0247844B2 (en) | 1981-11-02 | 1981-11-02 | SERAMITSUKUBARISUTA |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5877203A JPS5877203A (en) | 1983-05-10 |
| JPH0247844B2 true JPH0247844B2 (en) | 1990-10-23 |
Family
ID=16005951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56176000A Expired - Lifetime JPH0247844B2 (en) | 1981-11-02 | 1981-11-02 | SERAMITSUKUBARISUTA |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247844B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0523638U (en) * | 1991-08-13 | 1993-03-26 | アルプス電気株式会社 | Double super heterodyne system tuner |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304243A (en) * | 2015-11-12 | 2016-02-03 | 郑品章 | Voltage dependent resistor (VDR) |
-
1981
- 1981-11-02 JP JP56176000A patent/JPH0247844B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0523638U (en) * | 1991-08-13 | 1993-03-26 | アルプス電気株式会社 | Double super heterodyne system tuner |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5877203A (en) | 1983-05-10 |
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