JPH0248491B2 - INCRMN2O5DESHIMESARERURITSUHOSHOKEINOSUPINERUGATAKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO - Google Patents

Description

[Detailed description of the invention]

INDUSTRIAL APPLICATION FIELD The present invention relates to a novel compound, InCrMn ₂ O ₅ , having a cubic spinel structure, and a method for producing the same. The new compounds can be used as semiconductor materials, anionic conductors and catalytic materials. Prior Art Conventionally, compounds having a cubic spinel structure include (1) the general formula AB ₂ O ₄ (A is a divalent cation,
B represents a trivalent cation), (2) γ-Fe ₂ O ₃ , Ti ₃ Co ₂ O ₈ , Ti ₄ Co ₄ O ₁₂
Compounds with cation defects shown in are known. These compounds had a ratio of cations to anions of 3:4, 2:3 or 5:8. Purpose of the Invention The present invention provides a novel compound having anion defects (oxygen ion defects) in a ratio of 4 to 5, which is different from the ratio of the number of cations to the number of anions in conventional compounds having a cubic spinel structure. An object of the present invention is to provide a compound having a cubic spinel structure. Structure of the Invention The novel compound of the present invention is a compound having a cubic spinel structure represented by InCrMn ₂ O ₅ . This compound has anion defects (oxygen ion defects) with a ratio of cations to anions of 4:5, and its lattice constant is a=8.627±0.001.
(Å). The fact that this compound is anion defective means that assuming that it is in an anion defect state,
It is concluded from the fact that the density (5.54 g/cm ³ ) obtained from the above lattice constant (a = 8.627 ± 0.001 (Å)) and the actual value measured by Archimedes method (5.53 g/cm ³ ) are in good agreement. . Planar index (hkl), interplanar spacing (d (Å)) of this compound
[d _p (Å) indicates the measured value, d _c (Å) indicates the calculated value) and the relative reflection intensity ( ) % for X-rays are shown in Table 1. This compound can be used as anionic conductor, semiconductor material, and catalytic material.

[Table] This compound can be produced by the following method. Indium, chromium, and manganese metals or metal oxides or compounds that become metal oxides by heating are mixed so that the atomic ratio of indium, chromium, and manganese is 1:1:2, and the mixture is heated to 1200°C. It is obtained by heating at the above temperature in an atmosphere in which indium and chromium are each maintained in a trivalent ion state and manganese is maintained in a divalent ion state. Commercially available starting materials used in the present invention may be used as they are, but in order to allow the chemical reaction between the starting materials to proceed quickly, the smaller the particle size, the better, and it is particularly desirable that the particle size is 10 μm or less. Also,
When used as an anion conductor, a semiconductor material, a catalyst material, etc., the purity of the starting material is preferably as high as possible since contamination with impurities is avoided. Compounds that become metal oxides when heated include hydroxides, carbonates, nitrates, etc. of the respective metals. These raw materials are thoroughly mixed as is or with alcohol or acetone. The mixing ratio is In, Cr,
The atomic ratio of Mn is 1:1:2. If this ratio is exceeded, a single phase of the target compound cannot be obtained. This mixture is heated to 1200° C. or higher in an atmosphere where In and Cr each maintain a trivalent ion state, and Mn maintains a divalent ion state. Heating time is several hours or more. 0 after heating
It can be rapidly cooled to ℃ or rapidly withdrawn into the atmosphere. The color of the resulting InCrMn ₂ O ₅ compound is black;
It was found to have a crystal structure by powder X-ray diffraction. Its crystal structure is spinel-type, and the ratio of the number of cations to anions is 4:5, which is significantly different from the 3:4 ratio of normal spinel-type compounds.
It was from. Examples Indium oxide (In ₂ O ₃ ) powder with a purity of 99.99% or more, chromium oxide (Cr ₂ O ₃ ) powder with a purity of 99.99% or more, and manganese oxide (MnO) with a purity of 99.9% or more
The powder was weighed at a molar ratio of 1:1:4, ethanol was added in an agate mortar, and the mixture was mixed for about 30 minutes to obtain a fine particulate mixture with an average particle size of several μm. The mixture was sealed in a platinum tube and placed in a tubular siliconite furnace set at 1450°C and heated for 4 days, after which the sample was rapidly cooled to room temperature outside the furnace. The obtained sample is an InCrMn ₂ O ₅ single-phase sample, and the surface index (hkl), interplanar spacing of each reflection (d (Å)), and relative reflection intensity ( %) was measured. The results were as shown in Table-1. The lattice constants as a cubic system were as follows. a=8.627±0.001 (Å) The interplanar spacing (d (Å)) calculated from the above lattice constant and each reflection and hkl in Table 1 is in extremely good agreement with the measured interplanar spacing (d (Å)). Ta. Furthermore, the weight of the raw materials was precisely weighed before and after heating, and it was found that the stoichiometric number of the obtained compound was as described above. Effects of the Invention The present invention provides a novel compound (InCrMn ₂ O ₅ ) having a cubic spinel structure having anion defects and useful as a semiconductor material, an anion conductor, and a catalyst material. .

Claims (1)

[Claims] 1. A compound having a cubic spinel structure represented by InCrMn ₂ O ₅ . 2. Mix indium, chromium, and manganese metals or metal oxides or compounds that become metal oxides by heating so that the atomic ratio of indium, chromium, and manganese is 1:1:2, and mix the mixture with 1200 The cubic spinel structure represented by InCrMn ₂ O ₅ is heated at a temperature of ℃ or higher in an atmosphere where indium and chromium each maintain a trivalent ion state and manganese maintain a divalent ion state. A method for producing a compound having