JPH0249525B2 - - Google Patents
Info
- Publication number
- JPH0249525B2 JPH0249525B2 JP59165887A JP16588784A JPH0249525B2 JP H0249525 B2 JPH0249525 B2 JP H0249525B2 JP 59165887 A JP59165887 A JP 59165887A JP 16588784 A JP16588784 A JP 16588784A JP H0249525 B2 JPH0249525 B2 JP H0249525B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- voltage
- constant
- varistor
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 131
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 44
- 239000000203 mixture Substances 0.000 claims description 40
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 39
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 39
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 19
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 16
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 8
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- -1 Pr 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims 2
- 229910011255 B2O3 Inorganic materials 0.000 claims 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 description 64
- 238000010586 diagram Methods 0.000 description 30
- 229910000428 cobalt oxide Inorganic materials 0.000 description 27
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910000480 nickel oxide Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 239000000292 calcium oxide Substances 0.000 description 5
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910005793 GeO 2 Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910017922 MgLa Inorganic materials 0.000 description 1
- 229910017676 MgTiO3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電気回路における異常高電圧の吸収
等に使用される電圧非直線抵抗体(以下、バリス
タと呼ぶ)に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear resistor (hereinafter referred to as a varistor) used for absorbing abnormally high voltage in an electric circuit.
従来の技術
ZnOを主成分とした酸化物バリスタとして、
ZnOにBi2O3、CoO、MnO、Sb2O3、NiOおよび
SiO2を添加してなるバリスタが例えば特公昭53
−11076号公報で知られている。また、ZnOに
SrO、CoOを添加してなるバリスタ(特公昭48−
6754号公報)、ZnOにBaO、CoOを添加してなる
バリスタ(特公昭48−6755号公報)、ZnOに
BaO、MnO2を添加してなるバリスタ(特公昭48
−6756号公報)なども知られている。Conventional technology As an oxide varistor whose main component is ZnO,
ZnO with Bi 2 O 3 , CoO, MnO, Sb 2 O 3 , NiO and
For example, a varistor made by adding SiO 2 was developed in 1973.
It is known from Publication No. -11076. Also, ZnO
Varistors made by adding SrO and CoO
6754), varistors made by adding BaO and CoO to ZnO (Special Publication No. 6755), ZnO
Varistors made by adding BaO and MnO 2 (Special Publication 1973
-6756) are also known.
発明が解決しようとする問題点
しかし、前者のビスマスを使用するバリスタ
は、非直線指数αは非常に大きいという長所を有
しているが、大電流領域(10〜100A程度)にお
ける非直線性は悪く、更に、サージによるバイリ
スタ電圧の変化が大きいという欠点を有してい
る。一方、後者の3種類のバリスタは、非直線指
数αが10〜20程度であり、非直線指数αを30程度
にするためには、ZnOにSrOあるいはBaOを添加
して焼成した焼結体にCoOあるいはMnO2を塗布
して再度焼成しなければならないという欠点を有
している。従つて、本発明の目的は、大電流領域
における非直線性が比較的優れており、且つ耐サ
ージ性に優れているバリスタを提供することにあ
る。Problems to be Solved by the Invention However, the former varistor using bismuth has the advantage of a very large nonlinearity index α, but the nonlinearity in the large current region (approximately 10 to 100A) is Furthermore, it has the disadvantage that the biristor voltage changes greatly due to surges. On the other hand, the latter three types of varistors have a non-linearity index α of about 10 to 20, and in order to make the non-linearity index α about 30, it is necessary to use a sintered body made by adding SrO or BaO to ZnO. It has the disadvantage of having to be coated with CoO or MnO 2 and fired again. Therefore, an object of the present invention is to provide a varistor that has relatively excellent nonlinearity in a large current region and excellent surge resistance.
問題点を解決するための手段
上記目的を達成するための本発明のバリスタ
は、亜鉛(Zn)、ビスマス(Bi)、コバルト
(Co)、マンガン(Mn)、マグネシウム(Mg)、
カルシウム(Ca)、ストロンチウム(Sr)、バリ
ウム(Ba)、ニツケル(Ni)、ケイ素(Si)、錫
(Sn)、チタン(Ti)、ゲルマニウム(Ge)、アン
チモン(Sb)、ホウ素(B)、クロム(Cr)、イツテ
ルビウム(Yb)、エルビウム(Er)、イツトリウ
ム(Y)、ランタン(La)、プラセオジム(Pr)、
ネオジム(Nd)、アルミニウム(Al)、リチウム
(Li)を、これ等の代表的酸化物である酸化亜鉛
(ZnO)、酸化ビスマス(Bi2O3)、酸化コバルト
(CoO)、酸化マンガン(MnO)、酸化マグネシウ
ム(MgO)、酸化カルシウム(CaO)、酸化スト
ロンチウム(SrO)、酸化バリウム(BaO)、酸化
ニツケル(NiO)、酸化ケイ素(SiO2)、酸化錫
(SnO2)、酸化チタン(TiO2)、酸化ゲルマニウ
ム(GeO2)、酸化アンチモン(Sb2O3)、酸化ホ
ウ素(B2O3)、酸化クロム(Cr2O3)、酸化イツテ
ルビウム(Yb2O3)、酸化エルビウム(Er2O3)、
酸化イツトリウム(Y2O3)、酸化ランタン
(La2O3)、酸化プラセオジム(Pr2O3)、酸化ネオ
ジム(Nd2O3)、酸化アルミニウム(Al2O3)、酸
化リチウム(Li2O)、に換算した組成で、ZnO
(第1成分)81.9〜99.775モル%、Bi2O3(第2成
分)0.1〜3モル%、CoO、MnO、MgO、CaO、
SrO、BaO、NiO、SiO2、SnO2、TiO2、GeO2、
Sb2O3、B2O3およびCr2O3の一種以上(第3成
分)0.1〜10モル%、Yb2O3、Er2O3、Y2O3、
La2O3、Pr2O3およびNd2O3の一種以上(第4成
分)0.01〜3モル%、Al2O3(第5成分)0.01〜1
モル%、Li2O3(第6成分)0.005〜1.1モル%(但
し、Li2O/Al2O3のモル比は0.5〜1.1)となるよ
うに含む焼結体から成る。Means for Solving the Problems The varistor of the present invention for achieving the above object contains zinc (Zn), bismuth (Bi), cobalt (Co), manganese (Mn), magnesium (Mg),
Calcium (Ca), strontium (Sr), barium (Ba), nickel (Ni), silicon (Si), tin (Sn), titanium (Ti), germanium (Ge), antimony (Sb), boron (B), Chromium (Cr), ytterbium (Yb), erbium (Er), yztrium (Y), lanthanum (La), praseodymium (Pr),
Neodymium (Nd), aluminum (Al), and lithium (Li) are combined with their typical oxides such as zinc oxide (ZnO), bismuth oxide (Bi 2 O 3 ), cobalt oxide (CoO), and manganese oxide (MnO). ), magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), nickel oxide (NiO), silicon oxide (SiO 2 ), tin oxide (SnO 2 ), titanium oxide (TiO 2 ), germanium oxide (GeO 2 ), antimony oxide (Sb 2 O 3 ), boron oxide (B 2 O 3 ), chromium oxide (Cr 2 O 3 ), itterbium oxide (Yb 2 O 3 ), erbium oxide ( Er2O3 ) ,
Yttrium oxide (Y 2 O 3 ), lanthanum oxide (La 2 O 3 ), praseodymium oxide (Pr 2 O 3 ), neodymium oxide (Nd 2 O 3 ), aluminum oxide (Al 2 O 3 ), lithium oxide (Li 2 O), with the composition converted to ZnO
(First component) 81.9 to 99.775 mol%, Bi 2 O 3 (second component) 0.1 to 3 mol%, CoO, MnO, MgO, CaO,
SrO, BaO, NiO, SiO2 , SnO2 , TiO2 , GeO2 ,
0.1 to 10 mol% of one or more of Sb 2 O 3 , B 2 O 3 and Cr 2 O 3 (third component), Yb 2 O 3 , Er 2 O 3 , Y 2 O 3 ,
One or more of La 2 O 3 , Pr 2 O 3 and Nd 2 O 3 (fourth component) 0.01 to 3 mol%, Al 2 O 3 (fifth component) 0.01 to 1
The sintered body contains Li 2 O 3 (sixth component) in an amount of 0.005 to 1.1 mol % (however, the molar ratio of Li 2 O/Al 2 O 3 is 0.5 to 1.1).
作 用
上記発明によれば、各成分の相乗効果により、
大電流領域での電圧非直線性が優れ、且つ耐サー
ジ性も優れているバリスタを提供することが出来
る。Effect According to the above invention, due to the synergistic effect of each component,
It is possible to provide a varistor that has excellent voltage nonlinearity in a large current region and excellent surge resistance.
実施例
次に、図面を参照して本発明の実施例について
述べる。本発明の酸化物バリスタを製作するため
に、まず、ZnOが81.9〜99.775モル%、Bi2O3が
0.1〜3モル%、CoO、MnO、MgO、CaO、
SrO、BaO、NiO、SiO2、SnO2、TiO2、GeO2、
Sb2O3、B2O3およびCr2O3の一種以上が0.1〜10モ
ル%、Yb2O3、Er2O3、Y2O3、La2O3、Pr2O3お
よびNd2O3の一種以上が0.01〜3モル%、Al2O3
が0.01〜1モル%、Li2Oが0.005〜1.1モル%であ
り、これ等の総和が100モル%になるように酸化
物原料を計量し、これをボールミルなどによつて
十分混合した後、ポリビニールアルコールなどの
有機結合剤を用いて造粒した。なお、出発原料と
して、酸化物の代りに水酸化物や炭酸塩などを用
いることも可能である。また、MgTiO3、
CaTiO3、Zn2SnO4、MgLa2O4などの二元金属酸
化物を添加してもよい。成形、焼成後の寸法、特
性のバラツキなどに支障をきたすときは600〜
1000℃の空気中で1〜3時間仮焼した後に、微粉
に粉砕してその後に造粒してもよい。このように
して得られた種々の組成の造粒粉を0.5〜
2.0ton/cm2の圧力で加圧成形し、直径15.0mm、厚
さ2.0mmのデイスク型に仕上げ、更に、この成形
物を1000〜1400℃の空気中で1〜3時間焼成し、
最後に、この焼結体の両面にAgペーストを塗布
し、焼付けることにより電極を形成して種々の組
成の酸化物バリスタの素子を完成させた。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. In order to manufacture the oxide varistor of the present invention, first, ZnO was 81.9 to 99.775 mol% and Bi 2 O 3 was
0.1-3 mol%, CoO, MnO, MgO, CaO,
SrO, BaO, NiO, SiO2 , SnO2 , TiO2 , GeO2 ,
0.1 to 10 mol% of one or more of Sb 2 O 3 , B 2 O 3 and Cr 2 O 3 , Yb 2 O 3 , Er 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 and Nd 0.01 to 3 mol% of one or more types of 2 O 3 , Al 2 O 3
is 0.01 to 1 mol%, Li 2 O is 0.005 to 1.1 mol%, and the oxide raw materials are weighed so that the total of these is 100 mol%, and after thoroughly mixing with a ball mill etc., It was granulated using an organic binder such as polyvinyl alcohol. Note that it is also possible to use hydroxides, carbonates, etc. instead of oxides as starting materials. Also, MgTiO3 ,
Binary metal oxides such as CaTiO 3 , Zn 2 SnO 4 and MgLa 2 O 4 may be added. 600~ if there is a problem with variations in dimensions or properties after molding or firing.
After calcining in air at 1000°C for 1 to 3 hours, it may be ground into fine powder and then granulated. The granulated powder of various compositions obtained in this way is
Pressure molded at a pressure of 2.0 ton/cm 2 and finished into a disc shape with a diameter of 15.0 mm and a thickness of 2.0 mm.Furthermore, this molded product was fired in air at 1000 to 1400°C for 1 to 3 hours,
Finally, Ag paste was applied to both sides of this sintered body and electrodes were formed by baking to complete oxide varistor elements with various compositions.
第1図は上述のごとき方法で製作した酸化物バ
リスタの断面図である。この酸化物バリスタのバ
リスタ作用は導電性微結晶1とこれを包囲する高
抵抗層2によつて生じるものと考えられる。従つ
て、材料組成や焼成条件を変えることにより、バ
リスタ電圧や非直線指数を制御することができ
る。以上のようにバリスタ作用は焼結体内部で生
じているので、電極3の材料や、形成方法には特
に限定はなく、Ag、In、Al、Snなどの蒸着によ
る電極あるいはNiメツキによる電極なども同様
の結果を得る。 FIG. 1 is a cross-sectional view of an oxide varistor manufactured by the method described above. It is considered that the varistor action of this oxide varistor is caused by the conductive microcrystal 1 and the high resistance layer 2 surrounding it. Therefore, by changing the material composition and firing conditions, the varistor voltage and nonlinear index can be controlled. As mentioned above, the varistor action occurs inside the sintered body, so there are no particular limitations on the material or formation method of the electrode 3, and electrodes such as those made by vapor deposition of Ag, In, Al, Sn, etc., or electrodes made from Ni plating, etc. also obtains similar results.
上述の如き方法で製作した種々のバリスタのバ
リスタ電圧V1と、非直線性を示す電圧比Rと、
耐サージ性を示す電圧変化率△V1とを測定した
ところ、第2図〜第29図に示す結果が得られ
た。なお、第2図〜第29図において、代表的な
組成のV1、R、△V1値には点印、丸印、三角印
が付けられている。また、各図面には、比較のた
めに、本発明の範囲外の組成のバリスタの特性も
表示されている。また、第2図〜第28図の横軸
の各成分の量(モル%)は対数目盛で示されてい
る。また、バリスタ電圧V1は第1図の構造のバ
リスタに1.0mAを流した時の端子電圧を測定す
ることにより求めた。非直線を表わす電圧比R
は、バリスタ電流1.0mAと5Aとにおけるバリス
タ端子電圧V1とV5Aとを測定し、V5A/V1を計算
することによつて求めた。従つて、電圧比Rが小
さいほど電圧非直線性が優れ、非直線指数αが大
きい。電圧変化率△V1は、8×20μsの波形で
125Aのサージ電流をバリスタを2回流し、この
電流を流す前と後の逆方向のバリスタ電圧V1を
測定し、その変化分を計算することによつて求め
た。従つて、電圧変化率△V1(絶対値)が小さい
ほど耐サージ性が優れ、負荷に対する安定性が優
れている。 Varistor voltage V 1 of various varistors manufactured by the above method, voltage ratio R showing nonlinearity,
When the voltage change rate ΔV 1 indicating surge resistance was measured, the results shown in FIGS. 2 to 29 were obtained. In addition, in FIGS. 2 to 29, V 1 , R, and ΔV 1 values of typical compositions are marked with dots, circles, and triangles. Each drawing also shows the characteristics of a varistor whose composition is outside the scope of the present invention for comparison. Further, the amount (mol %) of each component on the horizontal axis of FIGS. 2 to 28 is shown on a logarithmic scale. Further, the varistor voltage V1 was determined by measuring the terminal voltage when 1.0 mA was applied to the varistor having the structure shown in FIG. Voltage ratio R representing non-linearity
was determined by measuring the varistor terminal voltages V 1 and V 5A at varistor currents of 1.0 mA and 5 A, and calculating V 5A /V 1 . Therefore, the smaller the voltage ratio R, the better the voltage nonlinearity, and the larger the nonlinearity index α. The voltage change rate △V 1 is a waveform of 8 × 20 μs.
This was determined by passing a surge current of 125 A through the varistor twice, measuring the varistor voltage V 1 in the opposite direction before and after passing this current, and calculating the amount of change. Therefore, the smaller the voltage change rate ΔV 1 (absolute value), the better the surge resistance and the better the stability against load.
次に、第2図〜第29図を詳しく説明する。 Next, FIGS. 2 to 29 will be explained in detail.
第2図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 2 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 93.31〜98.26モル%
Bi2O3 0.05〜5モル%
CoO 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第2図はBi2O3の量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。なお、
第2図〜第29図において、ZnOの量は各図の横
軸の成分のモル%が決まれば、必然的に決まる。ZnO 93.31-98.26 mol% Bi 2 O 3 0.05-5 mol% CoO 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 2 shows the amount (mol%) and total amount of Bi 2 O 3
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown. In addition,
In FIGS. 2 to 29, the amount of ZnO is naturally determined once the mole % of the component on the horizontal axis in each diagram is determined.
第3図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 3 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 93.31〜98.26モル%
Bi2O3 0.05〜5モル%
SiO2 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第3図は第2図の組成のCoOを同一グル
ープのSiO2に置き換えたものの特性を示す。ZnO 93.31-98.26 mol% Bi 2 O 3 0.05-5 mol% SiO 2 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. , FIG. 3 shows the characteristics of the composition shown in FIG. 2 in which CoO is replaced with SiO 2 from the same group.
第4図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 4 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 93.31〜98.26モル%
Bi2O3 0.05〜5モル%
Sb2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第4図は第2図の組成のCoOを同一グル
ープのSb2O3に置き換えた場合の特性を示す。ZnO 93.31-98.26 mol% Bi 2 O 3 0.05-5 mol% Sb 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol % That is, FIG. 4 shows the characteristics when CoO in the composition shown in FIG. 2 is replaced with Sb 2 O 3 from the same group.
第5図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 5 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
CoO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第5図はCoOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% CoO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 5 shows the amount of CoO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第6図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 6 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
MnO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第6図はMnOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% MnO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 6 shows the amount of MnO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第7図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 7 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
MgO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第7図はMgOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% MgO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 7 shows the amount of MgO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第8図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 8 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
CaO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第8図はCaOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% CaO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 8 shows the amount of CaO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第9図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 9 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
SrO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第9図はSrOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% SrO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 9 shows the amount of SrO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第10図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 10 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
BaO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第10図はBaOの量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% BaO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 10 shows V 1 , R, and ΔV 1 of various varistors in which the amount of BaO (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第11図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 11 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
NiO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第11図はNiOの量(モル%)及び合計
100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% NiO 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 11 shows the amount of NiO (mol%) and total
V 1 , R, and ΔV 1 of various varistors in which the amount of ZnO was changed to 100 mol % are shown.
第12図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 12 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
SiO2 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第12図はSiO2の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% SiO 2 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. , FIG. 12 shows V 1 , R, and ΔV 1 of various varistors in which the amount of SiO 2 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第13図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 13 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
SnO2 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第13図はSnO2の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% SnO 2 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. , FIG. 13 shows V 1 , R, and ΔV 1 of various varistors in which the amount of SnO 2 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第14図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 14 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
TiO2 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第14図はTiO2の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタV1、R、△V1を示す。ZnO 78.31-98.26 mol% TiO 2 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. , FIG. 14 shows various varistors V 1 , R, ΔV 1 in which the amount of TiO 2 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第15図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 15 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
GeO2 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第15図はGeO2の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% GeO 2 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. , FIG. 15 shows V 1 , R, and ΔV 1 of various varistors in which the amount of GeO 2 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第16図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 16 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
Sb2O3 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第16図はSb2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタV1、R、△V1を示す。ZnO 78.31 to 98.26 mol% Sb 2 O 3 0.05 to 20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol % That is, FIG. 16 shows various varistors V 1 , R, and ΔV 1 in which the amount of Sb 2 O 3 (mol %) and the amount of ZnO were changed so that the total amount was 100 mol %.
第17図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 17 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
B2O3 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第17図はB2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31-98.26 mol% B 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol % That is, FIG. 17 shows V 1 , R, and ΔV 1 of various varistors in which the amount of B 2 O 3 (mol %) and the amount of ZnO were changed so that the total amount was 100 mol %.
第18図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 18 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
Cr2O3 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第18図はCr2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 78.31 to 98.26 mol% Cr 2 O 3 0.05 to 20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol % That is, FIG. 18 shows V 1 , R, and ΔV 1 of various varistors in which the amount of Cr 2 O 3 (mol %) and the amount of ZnO were changed so that the total amount was 100 mol %.
第19図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 19 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
CoO+MnO 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第19図はCoO+MnO(等モル混合)の
量(モル%)及び合計100モル%となるように
ZnOの量を変化させた種々のバリスタのV1、R、
△V1を示す。ZnO 78.31 to 98.26 mol% CoO + MnO 0.05 to 20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. Figure 19 shows the amount (mol%) of CoO + MnO (equimolar mixture) and the amount so that the total is 100 mol%.
V 1 , R, of various varistors with varying amounts of ZnO,
Indicates △V 1 .
第20図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 20 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 78.31〜98.26モル%
CoO+SiO2+Sb2O3 0.05〜20モル%
Bi2O3 1モル%一定
Yb2O3 0.5モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第20図はCoO+SiO2+Sb2O3(等モル
混合)の量(モル%)及び合計100モル%となる
ようにZnOの量を変化させた種々のバリスタの
V1、R、△V1を示す。ZnO 78.31 to 98.26 mol% CoO + SiO 2 + Sb 2 O 3 0.05 to 20 mol% Bi 2 O 3 1 mol% constant Yb 2 O 3 0.5 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% In other words, Figure 20 shows the amounts (mol%) of CoO + SiO 2 + Sb 2 O 3 (equimolar mixture) and the amount of ZnO changed to a total of 100 mol% of various varistors.
V 1 , R, and ΔV 1 are shown.
第21図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 21 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Yb2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第21図はYb2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 77.81-97.76 mol% Yb 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 21 shows V 1 , R, and ΔV 1 of various varistors in which the amount of Yb 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第22図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 22 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Er2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第22図はEr2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 77.81-97.76 mol% Er 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 22 shows V 1 , R, and ΔV 1 of various varistors in which the amount of Er 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第23図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 23 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Y2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第23図はY2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタV1、R、△V1を示す。ZnO 77.81-97.76 mol% Y 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 23 shows various varistors V 1 , R, and ΔV 1 in which the amount of Y 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第24図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 24 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
La2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第24図はLa2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 77.81-97.76 mol% La 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 24 shows V 1 , R, and ΔV 1 of various varistors in which the amount of La 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第25図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 25 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Pr2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第25図はPr2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 77.81-97.76 mol% Pr 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 25 shows V 1 , R, and ΔV 1 of various varistors in which the amount of Pr 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第26図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 26 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Nd2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第26図はNd2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させた
種々のバリスタのV1、R、△V1を示す。ZnO 77.81-97.76 mol% Nd 2 O 3 0.05-20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 mol% i.e. FIG. 26 shows V 1 , R, and ΔV 1 of various varistors in which the amount of Nd 2 O 3 (mol %) and the amount of ZnO were varied so that the total amount was 100 mol %.
第27図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 27 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 77.81〜97.76モル%
Yb2O3+La2O3 0.05〜20モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Al2O3 0.1モル%一定
Li2O 0.09モル%一定
合 計 100モル%
即ち、第27図はYb2O3+La2O3(等モル混合)
の量(モル%)及び合計100モル%となるように
ZnOの量を変化させた種々のバリスタのV1、R、
△V1を示す。ZnO 77.81 to 97.76 mol% Yb 2 O 3 +La 2 O 3 0.05 to 20 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Al 2 O 3 0.1 mol% constant Li 2 O 0.09 mol% constant Total 100 Mol% In other words, Figure 27 shows Yb 2 O 3 + La 2 O 3 (equimolar mixture)
amount (mol%) and total 100 mol%
V 1 , R, of various varistors with varying amounts of ZnO,
Indicates △V 1 .
第28図は次の組成のバリスタのバリスタ電圧
V1と電圧比Rと電圧変化率△V1とを示す。 Figure 28 shows the varistor voltage of a varistor with the following composition.
V 1 , voltage ratio R, and voltage change rate ΔV 1 are shown.
ZnO 91.8〜97.4905モル%
Al2O3 0.005〜3モル%
Bi2O3 1モル%一定
CoO 1モル%一定
Yb2O3 0.5モル%一定
Li2O 0.0045〜2.7モル%
合 計 100モル%
即ち、第28図はAl2O3の量(モル%)及び合
計100モル%となるようにZnOの量を変化させ、
且つLi2O/Al2O3のモル比が第2図〜第27図の
場合と同様に0・9に保たれるようにLi2Oの量
を変化させた種々のバリスタのV1、R、△V1を
示す。ZnO 91.8-97.4905 mol% Al 2 O 3 0.005-3 mol% Bi 2 O 3 1 mol% constant CoO 1 mol% constant Yb 2 O 3 0.5 mol% constant Li 2 O 0.0045-2.7 mol% Total 100 mol% i.e. , Figure 28 shows that the amount of Al 2 O 3 (mol%) and the amount of ZnO were changed so that the total was 100 mol%,
In addition, the V 1 of various varistors in which the amount of Li 2 O was changed so that the molar ratio of Li 2 O / Al 2 O 3 was maintained at 0.9 as in the case of FIGS. 2 to 27, R, ΔV 1 is shown.
第29図は、Bi2O3を1モル%、CoOを1モル
%、Yb2O3を0.5モル%、Al2O3を0.1モル%に固
定し、Li2O/Al2O3のモル比を0.3〜1.3の範囲で
変化させ、残部をZnOとして総和を100モル%と
したもののV1、R、△V1を示す。 In Figure 29, Bi 2 O 3 is fixed at 1 mol %, CoO is fixed at 1 mol %, Yb 2 O 3 is fixed at 0.5 mol %, Al 2 O 3 is fixed at 0.1 mol %, and Li 2 O / Al 2 O 3 is V 1 , R, and ΔV 1 are shown when the molar ratio is varied in the range of 0.3 to 1.3, and the balance is ZnO, making the total 100 mol%.
次に、本発明の組成の限定理由を説明する。 Next, the reasons for limiting the composition of the present invention will be explained.
第2図、第3図、および第4図において、第2
成分としてのBi2O3が3モル%を越えたものは電
圧比Rが大きく、電圧変化率△V1の絶対値も大
きい。また、素子が互いに付着し、歩留りが悪く
なる。一方、BiO2が0.1モル%より少ないものは、
Rが大きく、△V1の絶対値も大きい。これに対
して、この第2成分が0.1〜3モル%の範囲によ
れば、Rが3以下、△V1の絶対値が10%以下で
ある。従つて、第2成分の好ましい範囲は0.1〜
3モル%である。また、第2成分のより好ましい
範囲は、Rが2.5以上になり、△V1の絶対値が6
以下になる0.2〜2モル%である。 In Figures 2, 3, and 4, the second
When Bi 2 O 3 as a component exceeds 3 mol %, the voltage ratio R is large and the absolute value of the voltage change rate ΔV 1 is also large. Furthermore, the elements adhere to each other, resulting in poor yield. On the other hand, when BiO 2 is less than 0.1 mol%,
R is large, and the absolute value of △V 1 is also large. On the other hand, when the second component is in the range of 0.1 to 3 mol %, R is 3 or less and the absolute value of ΔV 1 is 10% or less. Therefore, the preferred range of the second component is 0.1 to
It is 3 mol%. Further, a more preferable range of the second component is that R is 2.5 or more and the absolute value of △V 1 is 6.
The content is 0.2 to 2 mol%.
第5図〜第20図において、第3成分が10モル
%を越えたもの、および0.1モル%より少ないも
ののR及び△V1の絶対値は大きい。これに対し
て、第3成分が0.1〜10モル%の範囲であれば、
Rが3以下であり、△V1の絶対値が10%以下で
ある。従つて、第3成分の好ましい範囲は0.1〜
10モル%である。また、第3成分が0.5〜5モル
%の範囲では、Rおよび△V1の絶対値が更に小
さくなるので、0.5〜5モル%はより好ましい範
囲である。 In FIGS. 5 to 20, the absolute values of R and ΔV 1 are large for those containing more than 10 mol % of the third component and those containing less than 0.1 mol %. On the other hand, if the third component is in the range of 0.1 to 10 mol%,
R is 3 or less, and the absolute value of ΔV 1 is 10% or less. Therefore, the preferred range of the third component is 0.1 to
It is 10 mol%. Further, when the third component is in the range of 0.5 to 5 mol%, the absolute values of R and ΔV1 become even smaller, so 0.5 to 5 mol% is a more preferable range.
第21図〜第27図において、第4成分が3モ
ル%を越えたもの、および0.01モル%より少ない
ものは、大きなRと大きな△V1の絶対値を有す
る。これに対して、0.01〜3モル%の範囲では、
Rが3以下、△V1の絶対値が10%以下になる。
従つて、第4成分の好ましい範囲は0.01〜3モル
%である。また、より好ましい範囲は、R及び△
V1の絶対値が更に小さくなる0.05〜2モル%であ
る。 In FIGS. 21 to 27, those in which the fourth component exceeds 3 mol % and those in which it is less than 0.01 mol % have a large R and a large absolute value of ΔV 1 . On the other hand, in the range of 0.01 to 3 mol%,
R is 3 or less, and the absolute value of △V 1 is 10% or less.
Therefore, the preferred range of the fourth component is 0.01 to 3 mol%. Moreover, the more preferable range is R and Δ
It is 0.05 to 2 mol %, which further reduces the absolute value of V 1 .
第28図において、第5成分(Al2O3)が1モ
ル%を越えたもの、および0.01モル%より少ない
ものは大きなRと大きな△V1の絶対値を有する。
これに対して0.01〜1モル%の範囲では、Rが2
以下、△V1の絶対値が10%以下になる。従つて、
第5成分の好ましい範囲は0.01〜1モル%であ
る。また、より好ましい範囲は、Rおよび△V1
の絶対値が更に小さくなる0.05〜0.5モル%であ
る。 In FIG. 28, those in which the fifth component (Al 2 O 3 ) exceeds 1 mol % and those in which it is less than 0.01 mol % have a large R and a large absolute value of ΔV 1 .
On the other hand, in the range of 0.01 to 1 mol%, R is 2
Below, the absolute value of △V 1 becomes 10% or less. Therefore,
The preferred range of the fifth component is 0.01 to 1 mol%. Further, a more preferable range is R and △V 1
The absolute value of is further reduced at 0.05 to 0.5 mol%.
第29図において、Li2O/Al2O3のモル比が
1.1を越えたもの、および0.5より小さいものは、
大きなRおよび大きな△V1の絶対値を有する。
これに対して、上記モル比が0.5〜1.1の範囲であ
れば、Rが3以下、△V1の絶対値が10%以下に
なる。第29図ではAl2O3が0.1モル%とされてい
るが、Al2O3を0.01〜1モル%にした場合にも同
様な傾向となる。従つて、好ましいモル比の範囲
は0.5〜1.1である。また、より好ましいモル比の
範囲は、更にRと△V1の絶対値が小さくなる0.8
〜1.0の範囲であり、最も好ましいモル比は0.9近
傍である。モル比の範囲が上述の如く決定するこ
とにより、Li2Oの範囲は0.005〜1.1モル%とな
る。 In Figure 29, the molar ratio of Li 2 O/Al 2 O 3 is
Anything over 1.1 and less than 0.5 is
It has a large R and a large absolute value of ΔV 1 .
On the other hand, if the molar ratio is in the range of 0.5 to 1.1, R will be 3 or less and the absolute value of ΔV 1 will be 10% or less. In FIG. 29, Al 2 O 3 is set at 0.1 mol %, but the same tendency occurs when Al 2 O 3 is set at 0.01 to 1 mol %. Therefore, the preferred molar ratio range is 0.5 to 1.1. In addition, a more preferable molar ratio range is 0.8, which further reduces the absolute values of R and △V 1 .
~1.0, and the most preferred molar ratio is around 0.9. By determining the molar ratio range as described above, the range of Li 2 O is 0.005 to 1.1 mol %.
上述の如く、ZnOを除く他の成分の範囲が決ま
れば、ZnOの量(モル%)は残部であるので、必
然的に81.9〜99.775モル%である。なお、第2図
〜第29図において、固定した成分の量(モル
%)を変えても同様な傾向が得られる。また、第
3成分、第4成分の酸化物の種類を変えても、同
一群の酸化物はほぼ同一の働きをなすので、同様
な傾向を示す。 As mentioned above, once the range of other components other than ZnO is determined, the amount (mol%) of ZnO is the remainder and is necessarily 81.9 to 99.775 mol%. In addition, in FIGS. 2 to 29, similar trends can be obtained even if the amount (mol %) of the fixed component is changed. Further, even if the types of oxides of the third and fourth components are changed, the same tendency will be exhibited since the oxides of the same group perform almost the same function.
以上、本発明の実施例について述べたが、本発
明はこれに限定されるものではなく、更に変形可
能なものである。例えば、本発明の目的を損なわ
ない範囲で他の物質を少量添加してもよい。 Although the embodiments of the present invention have been described above, the present invention is not limited thereto and can be further modified. For example, other substances may be added in small amounts as long as the purpose of the present invention is not impaired.
発明の効果
上述から明らかな如く、本発明によれば、電圧
比Rが1.45〜3程度、電圧変化率△V1の絶対値が
10%以下、バリスタ電圧V1が35〜245V程度のバ
リスタを提供することが出来る。なお、電圧比R
はバリスタ電流1mAと5Aとの電圧によつて決
められているので、これにより大電流領域の非直
線性を知ることが出来、本発明ではこれが小さい
ので、大電流領域での電圧非直線性が大きい。ま
た、電圧変化率△V1の絶対値が小さいので、耐
サージ性に優れている。Effects of the Invention As is clear from the above, according to the present invention, the voltage ratio R is about 1.45 to 3, and the absolute value of the voltage change rate △V 1 is
It is possible to provide a varistor with a varistor voltage V 1 of about 35 to 245 V, with a varistor voltage V 1 of 10% or less. In addition, the voltage ratio R
is determined by the voltage of the varistor current 1mA and 5A, so it is possible to know the nonlinearity in the large current region.In the present invention, since this is small, the voltage nonlinearity in the large current region can be determined. big. Furthermore, since the absolute value of the voltage change rate ΔV 1 is small, it has excellent surge resistance.
第1図は本発明に係わる酸化物電圧非直線抵抗
体の焼結結晶粒子の配列を模型的に示す断面図、
第2図はBi2O3(モル%)の変化に対するバリス
タ電圧V1、電圧比R、電圧変化率△V1の変化を
示す特性曲線図、第3図もBi2O3(モル%)の変
化に対するバリスタ電圧V1、電圧比R、電圧変
化率△V1の変化を示す特性曲線図、第4図も
Bi2O3(モル%)の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図、第5図はCoO(モル%)の変化に対するバ
リスタ電圧V1、電圧比R、電圧変化率△V1の変
化を示す特性曲線図、第6図はMnO(モル%)の
変化に対するバリスタ電圧V1、電圧比R、電圧
変化率△V1の変化を示す特性曲線図、第7図は
MgO(モル%)の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図、第8図はCaO(モル%)の変化に対するバ
リスタ電圧V1、電圧比R、電圧変化率△V1の変
化を示す特性曲線図、第9図はSrO(モル%)の
変化に対するバリスタ電圧V1、電圧比R、電圧
変化率△V1の変化を示す特性曲線図、第10図
はBaO(モル%)の変化に対するバリスタ電圧
V1、電圧比R、電圧変化率△V1の変化を示す特
性曲線図、第11図はNiO(モル%)の変化に対
するバリスタ電圧V1、電圧比R、電圧変化率△
V1の変化を示す特性曲線図、第12図はSiO2(モ
ル%)の変化に対するバリスタ電圧V1、電圧比
R、電圧変化率△V1の変化を示す特性曲線図、
第13図はSnO2(モル%)の変化に対するバリス
タ電圧V1、電圧比R、電圧変化率△V1の変化を
示す特性曲線図、第14図はTiO2(モル%)の変
化に対するバリスタ電圧V1、電圧比R、電圧変
化率△V1の変化を示す特性曲線図、第15図は
GeO2(モル%)の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図、第16図はSb2O3(モル%)の変化に対す
るバリスタ電圧V1、電圧比R、電圧変化率△V1
の変化を示す特性曲線図、第17図はB2O3(モル
%)の変化に対するバリスタ電圧V1、電圧比R、
電圧変化率△V1の変化を示す特性曲線図、第1
8図はCr2O3(モル%)の変化に対するバリスタ
電圧V1、電圧比R、電圧変化率△V1の変化を示
す特性曲線図、第19図はCoO、MnOの合計
(モル%)の変化に対するバリスタ電圧V1、電圧
比R、電圧変化率△V1の変化を示す特性曲線図、
第20図はCoO、SiO2、Sb2O3の合計(モル%)
の変化に対するバリスタ電圧V1、電圧比R、電
圧変化率△V1の変化を示す特性曲線図、第21
図はYb2O3(モル%)の変化に対するバリスタ電
圧V1、電圧比R、電圧変化率△V1の変化を示す
特性曲線図、第22図はEr2O3(モル%)の変化
に対するバリスタ電圧V1、電圧比R、電圧変化
率△V1の変化を示す特性曲線図、第23図は
Y2O3(モル%)の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図、第24図はLa2O3(モル%)の変化に対す
るバリスタ電圧V1、電圧比R、電圧変化率△V1
の変化を示す特性曲線図、第25図はPr2O3(モ
ル%)の変化に対するバリスタ電圧V1、電圧比
R、電圧変化率△V1の変化を示す特性曲線図、
第26図はNd2O3(モル%)の変化に対するバリ
スタ電圧V1、電圧比R、電圧変化率△V1の変化
を示す特性曲線図、第27図はYb2O3、La2O3の
合計(モル%)の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図、第28図はAl2O3(モル%)の変化に対す
るバリスタ電圧V1、電圧比R、電圧変化率△V1
の変化を示す特性曲線図、第29図はLi2Oと
Al2O3のモル比の変化に対するバリスタ電圧V1、
電圧比R、電圧変化率△V1の変化を示す特性曲
線図である。
1……結晶、2……高抵抗層、3……電極。
FIG. 1 is a cross-sectional view schematically showing the arrangement of sintered crystal particles of an oxide voltage nonlinear resistor according to the present invention;
Figure 2 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in Bi 2 O 3 (mol %), and Figure 3 also shows changes in Bi 2 O 3 (mol %). Figure 4 is also a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in .
Varistor voltage V 1 for changes in Bi 2 O 3 (mol %),
Characteristic curve diagram showing changes in voltage ratio R and voltage change rate △V 1. Figure 5 shows characteristics showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in CoO (mol%). The curve diagram, Figure 6 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in MnO (mol%), and Figure 7 is
Varistor voltage V 1 for changes in MgO (mol %),
A characteristic curve diagram showing changes in voltage ratio R and voltage change rate △V 1. Figure 8 shows characteristics showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in CaO (mol%). Curve diagram. Figure 9 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in SrO (mol%). Figure 10 is a characteristic curve diagram showing changes in BaO (mol%). varistor voltage
A characteristic curve diagram showing changes in V 1 , voltage ratio R, and voltage change rate △V 1 . Figure 11 shows the varistor voltage V 1 , voltage ratio R, and voltage change rate △ with respect to changes in NiO (mol%).
A characteristic curve diagram showing changes in V 1 , FIG. 12 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in SiO 2 (mol%),
Figure 13 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in SnO 2 (mol%), and Figure 14 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in SnO 2 (mol%). Figure 15 is a characteristic curve diagram showing changes in voltage V 1 , voltage ratio R, and voltage change rate △V 1 .
Varistor voltage V 1 for changes in GeO 2 (mol %),
A characteristic curve diagram showing changes in voltage ratio R and voltage change rate △V 1. Figure 16 shows varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in Sb 2 O 3 (mol%).
A characteristic curve diagram showing changes in B 2 O 3 (mol%), varistor voltage V 1 , voltage ratio R,
Characteristic curve diagram showing changes in voltage change rate △V 1 , 1st
Figure 8 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in Cr 2 O 3 (mol%), and Figure 19 is the total of CoO and MnO (mol%) A characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in ,
Figure 20 shows the total of CoO, SiO 2 and Sb 2 O 3 (mol%)
Characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in , 21st
The figure is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R , and voltage change rate △V 1 with respect to changes in Yb 2 O 3 (mol %), and Figure 22 shows changes in Er 2 O 3 (mol %). Figure 23 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to
Varistor voltage V 1 for changes in Y 2 O 3 (mol %),
A characteristic curve diagram showing changes in voltage ratio R and voltage change rate △V 1. Figure 24 shows varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in La 2 O 3 (mol%).
FIG. 25 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in Pr 2 O 3 (mol %);
FIG. 26 is a characteristic curve diagram showing changes in varistor voltage V 1 , voltage ratio R, and voltage change rate ΔV 1 with respect to changes in Nd 2 O 3 ( mol% ) , and FIG . Varistor voltage V 1 for a change in the sum (mol%) of 3 ,
A characteristic curve diagram showing changes in voltage ratio R and voltage change rate △V 1. Figure 28 shows varistor voltage V 1 , voltage ratio R, and voltage change rate △V 1 with respect to changes in Al 2 O 3 (mol%).
Figure 29 is a characteristic curve diagram showing the changes in Li 2 O and
Varistor voltage V 1 for changes in the molar ratio of Al 2 O 3 ,
It is a characteristic curve diagram showing changes in voltage ratio R and voltage change rate ΔV 1 . 1...Crystal, 2...High resistance layer, 3...Electrode.
Claims (1)
Si、Sn、Ti、Ge、Sb、B、Cr、Yb、Er、Y、
La、Pr、Nd、Al、Liを、これ等の代表的酸化物
であるZnO、Bi2O3、CoO、MnO、MgO、CaO、
SrO、BaO、NiO、SiO2、SnO2、TiO2、GeO2、
Sb2O3、B2O3、Cr2O3、Yb2O3、Er2O3、Y2O3、
La2O3、Pr2O3、Nd2O3、Al2O3、Li2Oに換算し
た組成で、 ZnO81.9〜99.775モル%、 Bi2O30.1〜3モル% CoO、MnO、MgO、CaO、SrO、BaO、NiO、
SiO2、SnO2、TiO2、GeO2、Sb2O3、B2O3およ
びCr2O3の内の一種以上の酸化物0.1〜10モル%、 Yb2O3、Er2O3、Y2O3、La2O3、Pr2O3および
Nd2O3の内の一種以上の酸化物0.01〜3モル%、 Al2O30.01〜1モル%、 Li2O0.005〜1.1モル%(但し、Li2O/Al2O3の
モル比の範囲は0.5〜1.1) となるように含む焼結体からなる酸化物電圧非直
線抵抗体。[Claims] 1 Zn, Bi, Co, Mn, Mg, Ca, Sr, Ba, Ni,
Si, Sn, Ti, Ge, Sb, B, Cr, Yb, Er, Y,
La, Pr, Nd, Al, Li, these representative oxides ZnO, Bi 2 O 3 , CoO, MnO, MgO, CaO,
SrO, BaO, NiO, SiO2 , SnO2 , TiO2 , GeO2 ,
Sb 2 O 3 , B 2 O 3 , Cr 2 O 3 , Yb 2 O 3 , Er 2 O 3 , Y 2 O 3 ,
Composition calculated as La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Al 2 O 3 , Li 2 O, ZnO 81.9-99.775 mol%, Bi 2 O 3 0.1-3 mol% CoO, MnO, MgO, CaO, SrO, BaO, NiO,
0.1 to 10 mol% of oxide of one or more of SiO2 , SnO2 , TiO2 , GeO2 , Sb2O3 , B2O3 and Cr2O3 , Yb2O3 , Er2O3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 and
0.01 to 3 mol% of one or more oxides of Nd 2 O 3 , 0.01 to 1 mol% of Al 2 O 3 , 0.005 to 1.1 mol% of Li 2 O (however, the mol of Li 2 O/Al 2 O 3 An oxide voltage nonlinear resistor made of a sintered body with a ratio of 0.5 to 1.1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59165887A JPS6143404A (en) | 1984-08-08 | 1984-08-08 | Oxide voltage nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59165887A JPS6143404A (en) | 1984-08-08 | 1984-08-08 | Oxide voltage nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6143404A JPS6143404A (en) | 1986-03-03 |
| JPH0249525B2 true JPH0249525B2 (en) | 1990-10-30 |
Family
ID=15820862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59165887A Granted JPS6143404A (en) | 1984-08-08 | 1984-08-08 | Oxide voltage nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6143404A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138298A (en) * | 1989-11-02 | 1992-08-11 | Sanken Electric Co., Ltd. | Metallic oxide resistive bodies having a nonlinear volt-ampere characteristic and method of fabrication |
| US5640136A (en) * | 1992-10-09 | 1997-06-17 | Tdk Corporation | Voltage-dependent nonlinear resistor |
| JP2975500B2 (en) * | 1993-05-10 | 1999-11-10 | 三菱電機株式会社 | High resistance voltage nonlinear resistor and its manufacturing method |
| JP2940486B2 (en) * | 1996-04-23 | 1999-08-25 | 三菱電機株式会社 | Voltage nonlinear resistor, method for manufacturing voltage nonlinear resistor, and lightning arrester |
| JP3908611B2 (en) * | 2002-06-25 | 2007-04-25 | Tdk株式会社 | Voltage nonlinear resistor ceramic composition and electronic component |
| JP5065624B2 (en) * | 2006-06-06 | 2012-11-07 | 株式会社東芝 | Current-voltage non-linear resistors and lightning arresters |
| JP4847918B2 (en) * | 2007-05-28 | 2011-12-28 | 立山科学工業株式会社 | ESD protection element |
| EP4495085A4 (en) | 2022-03-18 | 2026-02-18 | Meidensha Electric Mfg Co Ltd | ANTIMONOXIDE SUBSTITUTE ZINC OXIDE ELEMENT |
-
1984
- 1984-08-08 JP JP59165887A patent/JPS6143404A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6143404A (en) | 1986-03-03 |
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