JPH0249534B2 - - Google Patents
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- Publication number
- JPH0249534B2 JPH0249534B2 JP60082299A JP8229985A JPH0249534B2 JP H0249534 B2 JPH0249534 B2 JP H0249534B2 JP 60082299 A JP60082299 A JP 60082299A JP 8229985 A JP8229985 A JP 8229985A JP H0249534 B2 JPH0249534 B2 JP H0249534B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- amplitude
- waveform
- deflection
- linear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3458—Monocrystalline
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H10P14/382—Scanning of a beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、疑似線状電子ビームを用いて絶縁膜
上に大面積の半導体単結晶層の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a large area semiconductor single crystal layer on an insulating film using a pseudo-linear electron beam.
近年、半導体工業の分野においては、電子ビー
ムアニール技術を用いたSOI（Silicon On
Insulator）膜の形成技術の研究開発が盛んとな
つている。この技術では、シリコン単結晶基板上
にシリコン酸化膜やシリコン窒化膜等の絶縁膜を
形成し、その上に多結晶シリコン膜や非晶質シリ
コン膜等を堆積し、電子ビーム或いはレーザビー
ム等のビーム照射により、上記シリコン膜を溶融
再結晶化させてシリコン単結晶層を成長させる方
法を採つている。
In recent years, in the semiconductor industry, SOI (Silicon On
Research and development into technology for forming insulator films is gaining momentum. In this technology, an insulating film such as a silicon oxide film or a silicon nitride film is formed on a silicon single crystal substrate, a polycrystalline silicon film or an amorphous silicon film is deposited on top of the insulating film, and then an insulating film such as an electron beam or laser beam is deposited on top of the insulating film. A method is adopted in which the silicon film is melted and recrystallized by beam irradiation to grow a silicon single crystal layer.
ところで、従来の電子ビームアニール装置で
は、細く絞つた電子ビーム（ガウス分布）をＸ、
Ｙ方向に走査させて試料面内を均一にアニールし
ている。この場合、通常使用される電子ビームの
直径は10〜500〔μｍ〕程度であり、１回のビーム
走査で溶融できるシリコン膜の幅は大略上記ビー
ム径程度となるため、大面積単結晶層を得る目的
には不適当であつた。それは、走査線の重合わせ
の部分での結晶粒界の発生を抑止することが困難
なためである。 By the way, in conventional electron beam annealing equipment, a narrowly focused electron beam (Gaussian distribution) is
The specimen surface is uniformly annealed by scanning in the Y direction. In this case, the diameter of the electron beam normally used is about 10 to 500 [μm], and the width of the silicon film that can be melted in one beam scan is approximately the above beam diameter. It was inappropriate for the purpose of obtaining it. This is because it is difficult to suppress the occurrence of grain boundaries in areas where scanning lines overlap.
そこで最近、第２図に示す如く細く絞つた電子
ビームをその走査方向と直交する方向に高速偏向
することにより、電子ビームを疑似的に線状化
し、幅広い溶融領域を形成する技術が有望視され
ている。この場合、線状化ビームの長さは高速偏
向の振幅により決定され、原理的にはその長さに
は制限はない。しかし、一定ビーム電流のスポツ
トビームを高速偏向させた場合、振幅の増大に伴
い、第３図に示すように電子ビーム照射された試
料表面の温度は低下する。半導体単結晶層を製造
するためには、半導体膜を十分に溶融する必要が
ある。従つて、高速偏向振幅を増大させるには、
ビーム電流を増大させなければならない。このよ
うな事情から、実際には、ビーム電流の限界（即
ち電子銃の輝度特性）により、線状化ビームの長
さは決定される。 Recently, as shown in Figure 2, a promising technology has been developed to create a pseudo-linear electron beam by deflecting a narrowly focused electron beam at high speed in a direction perpendicular to its scanning direction, thereby forming a wide molten region. ing. In this case, the length of the linearized beam is determined by the amplitude of the high-speed deflection, and in principle there is no limit to its length. However, when a spot beam with a constant beam current is deflected at high speed, as the amplitude increases, the temperature of the sample surface irradiated with the electron beam decreases as shown in FIG. In order to manufacture a semiconductor single crystal layer, it is necessary to sufficiently melt the semiconductor film. Therefore, to increase the fast deflection amplitude,
Beam current must be increased. Under these circumstances, the length of the linearized beam is actually determined by the limit of the beam current (ie, the brightness characteristics of the electron gun).
一方、上記の疑似線状電子ビームによる単結晶
層の製造においては、ビーム照射された試料表面
の線状化ビームの長さ方向の温度分布の制御の問
題がある。元来、線状電子ビームエミツタを用
い、試料表面上に線状ビームを投影する線状電子
ビームを用いる方法に比べ、上記の疑似線状電子
ビームを用いる方法では、電子ビームの強度分布
の制御性は格段に優れているが、高速偏向に用い
る電圧波形によつて、電子ビームの強度分布は変
化する。第４図は正弦波により高速偏向させた場
合の線状化方向のシリコン表面温度分布である。
正弦波の特性として振幅の両端付近に２つの温度
ピークが存在し、中央部はこれらの部分よりも温
度は低くなる。そのため、試料に電子ビーム照射
した際に疑似線状ビームの両端付近を適切に溶融
させた場合、中央付近は溶融されない。このた
め、試料表面を均一にアニールすることが困難で
ある。 On the other hand, in the production of a single crystal layer using the above-mentioned pseudo-linear electron beam, there is a problem of controlling the temperature distribution in the length direction of the linearized beam on the surface of the sample irradiated with the beam. Originally, compared to the method using a linear electron beam that uses a linear electron beam emitter to project a linear beam onto the sample surface, the method using the pseudo-linear electron beam described above provides better control over the intensity distribution of the electron beam. However, the intensity distribution of the electron beam changes depending on the voltage waveform used for high-speed deflection. FIG. 4 shows the silicon surface temperature distribution in the linear direction when high-speed deflection is performed using a sine wave.
As a characteristic of a sine wave, there are two temperature peaks near both ends of the amplitude, and the temperature in the center is lower than in these parts. Therefore, if the vicinity of both ends of the quasi-linear beam is appropriately melted when the sample is irradiated with an electron beam, the vicinity of the center will not be melted. Therefore, it is difficult to uniformly anneal the sample surface.
これを解決するためには、正弦波によらず、三
角波等の電子ビームの存在確率が振幅内の位置に
よらず一定な波形を用いる方法も考えられるが、
高速偏向周波数が高くなると、波形歪みが増大
し、正弦波の特性に近くなるため、上記の問題の
解決は困難である。高速偏向信号には、ＭHzオー
ダの周波数が必要である。それは、第５図に示す
ように瞬間的な電子ビームの存在位置（偏向波形
の位相）の違いにより試料表面温度の変動が大き
くなるためである。そして、この変動は〜２〔Ｍ
Hz〕以上の周波数で無視し得る程小さくなる。 In order to solve this problem, it is possible to use a waveform such as a triangular wave, in which the existence probability of the electron beam is constant regardless of the position within the amplitude, instead of using a sine wave.
As the high-speed deflection frequency increases, waveform distortion increases and becomes closer to the characteristics of a sine wave, making it difficult to solve the above problem. High speed deflection signals require frequencies on the order of MHz. This is because, as shown in FIG. 5, the sample surface temperature fluctuates greatly due to the instantaneous difference in the position of the electron beam (the phase of the deflection waveform). And this variation is ~2 [M
It becomes negligibly small at frequencies above [Hz].
このように、従来の疑似線状ビーム技術には上
記のような問題があり、均一性の良い半導体単結
晶層を得ることは困難であつた。 As described above, the conventional quasi-linear beam technique has the above-mentioned problems, and it has been difficult to obtain a semiconductor single crystal layer with good uniformity.
本発明の目的は、疑似線状ビームの長さ方向の
温度分布を平坦なものにすると共に、電子ビーム
照射部の外周部での温度分布をなだらかなものと
することができ、試料内に発生する熱歪みを最小
化し、良質な単結晶層を製造することを目的とし
たものである。
An object of the present invention is to flatten the temperature distribution in the length direction of a quasi-linear beam, and also to make the temperature distribution at the outer circumference of the electron beam irradiation part gentle. The purpose of this is to minimize the thermal distortion caused by this process and to produce a high-quality single crystal layer.
〔発明の概要〕
本発明の基本は、電子ビームを１方向に高速偏
向させて疑似線状ビームを形成する際に高速偏向
させる高周波電圧波形をそれより低い周波数の波
形で振幅変調させ線状化ビームの強度分布を均一
化して大面積SOIを得るに際して、変調波形に関
するものである。[Summary of the Invention] The basis of the present invention is that when an electron beam is rapidly deflected in one direction to form a pseudo-linear beam, the high-frequency voltage waveform used for the high-speed deflection is amplitude-modulated with a lower frequency waveform to form a linear beam. This relates to the modulation waveform when obtaining a large-area SOI by making the beam intensity distribution uniform.
搬送波が正弦波であり、これは以下に示すよう
にピークでの滞在確率が非常に大きい。 The carrier wave is a sine wave, which has a very high probability of staying at the peak as shown below.
ａを振幅、ｗを角振動数とすると、 Ｙ＝asinWt 各Ｙ点での滞在確率は、以下の様になる。 Let a be the amplitude and w be the angular frequency, then Y=asinWt The staying probability at each Y point is as follows.
第６図はこれを図示したものであり、振りの中
央で極小値をとり、ピークの部分で最大∞とな
る、（全体にわたつた積分は収検する）。 Figure 6 illustrates this, where the minimum value is reached at the center of the swing, and the maximum value is ∞ at the peak (the integral over the entire range is accepted).
振幅変調する事によつて、種々の位置にピーク
を持つ搬送波が存在するが、そのうち２つの振幅
をa1、a2として、a1＞a2＞０とするとa1のもの
は、a1Ｙ−a1に対して寄与し、従つてa2Ｙ
−a2に対しても寄与するが、a2の振幅を持つも
のは、a1｜Ｙ｜＞a2に対しては寄与しない。 Due to amplitude modulation, there are carrier waves with peaks at various positions, but if the amplitudes of two of them are a 1 and a 2 and a 1 > a 2 > 0, then the carrier wave with a 1 is a 1 contributes to Y−a 1 and therefore a 2 Y
It also contributes to −a 2 , but something with an amplitude of a 2 does not contribute to a 1 |Y|>a 2 .
このような検討により、ピークの存在確率を想
定して、ビーム強度を求めると、その存在確率
を、２次函数で近似すれば、かなりの平坦化が得
られることが分つた。これは、簡単な計算からｘ
＝α3√となる。このまゝでは、周辺部にビーム
強度低下が見られるので、周辺部のピーク密度を
増加するためにｔ−ｘ曲線の上部の平坦部を続け
る。同時に中心から端部にわたつて電子存在確率
を示す（第７図）。 Through such studies, it has been found that when the beam intensity is determined assuming the probability of the existence of a peak, considerable flattening can be obtained by approximating the probability of existence by a quadratic function. This can be calculated from a simple calculation
= α 3 √. If this continues, a decrease in beam intensity will be seen in the peripheral area, so the upper flat part of the t-x curve will be continued in order to increase the peak density in the peripheral area. At the same time, the electron existence probability is shown from the center to the edge (Figure 7).
本発明によれば疑似線状ビームの長さ方向の温
度分布を制御（平坦なものに）することができ、
幅広い均一な半導体層の溶融・最凝固を達成する
ことができる。このため、残留熱歪みの小さい良
質な半導体単結晶層を大面積に互つて製造するこ
とができる。
According to the present invention, the temperature distribution in the length direction of the pseudo-linear beam can be controlled (made flat),
It is possible to achieve uniform melting and solidification of a wide range of semiconductor layers. Therefore, high-quality semiconductor single-crystal layers with small residual thermal strain can be manufactured over a large area.
第８図は本発明の実施例に係わる電子ビームア
ニール装置を示す概略構成図である。図中１は電
子銃で、この電子銃１から放射された電子ビーム
は対物レンズ２により集束されて試料３上に照射
されると共に、走査コイル（第１の偏向器）４に
より試料３上で走査される。走査コイル４は実際
にはビームをＸ方向（紙面左右方向）に偏向する
Ｘ方向偏向コイルと、ビームをＹ方向（紙面表裏
方向）に偏向するＹ方向偏向コイルとから構成さ
れている。また、レンズ２の主面にはアパーチヤ
５が配置され、電子銃１とレンズ２との間にはビ
ームをON−OFFするためのブランキング電極６
が配置されている。
FIG. 8 is a schematic configuration diagram showing an electron beam annealing apparatus according to an embodiment of the present invention. In the figure, 1 is an electron gun, and the electron beam emitted from the electron gun 1 is focused by an objective lens 2 and irradiated onto a sample 3, and is also directed onto the sample 3 by a scanning coil (first deflector) 4. scanned. The scanning coil 4 is actually composed of an X-direction deflection coil that deflects the beam in the X direction (left and right directions in the paper) and a Y-direction deflection coil that deflects the beam in the Y direction (front and back directions in the paper). Furthermore, an aperture 5 is arranged on the main surface of the lens 2, and a blanking electrode 6 is provided between the electron gun 1 and the lens 2 for turning the beam on and off.
is located.
ここまでの構成は通常の電子ビームアニール装
置と同様であり、本実施例がこれと異なる点は、
前記レンズ２と偏向コイル４との間にビームを高
速偏向するための偏向板（第２の偏向器）７を設
けたことにある。すなわち、偏向板７は第２図に
示す如くＹ方向に対向配置され、ビームをＹ方向
に高速偏向するものとなつている。また、偏向板
７には高周波電源により振幅変調された高周波電
圧が印加されるものとなつている。なお、上記説
明では偏向板７を１組としたが、これに加えビー
ムをＸ方向に高速偏向する偏向器を設けるように
してもよい。また、ワーキングテイスタンスが十
分大きい場合、偏向板７′を前記偏向コイル４の
下方に設けることも可能である。 The configuration up to this point is the same as that of a normal electron beam annealing device, and this embodiment differs from this in the following points:
A deflection plate (second deflector) 7 for deflecting the beam at high speed is provided between the lens 2 and the deflection coil 4. That is, the deflection plates 7 are arranged to face each other in the Y direction as shown in FIG. 2, and are configured to deflect the beam in the Y direction at high speed. Further, a high frequency voltage whose amplitude is modulated by a high frequency power source is applied to the deflection plate 7. In the above description, one set of deflection plates 7 is used, but in addition to this, a deflector that deflects the beam in the X direction at high speed may be provided. Furthermore, if the working tastance is sufficiently large, it is also possible to provide a deflection plate 7' below the deflection coil 4.
このように構成された装置において、Ｙ軸方向
に高速偏向させた電子ビームをＸ軸方向に走査さ
せる。 In the apparatus configured in this way, an electron beam that is deflected at high speed in the Y-axis direction is scanned in the X-axis direction.
このとき、Ｙ軸方向の高速偏向信号として、振
幅変調した正弦波を用いることによつて線状化ビ
ームの線方向の温度分布を精密に制御した。 At this time, the temperature distribution in the linear direction of the linearized beam was precisely controlled by using an amplitude-modulated sine wave as a high-speed deflection signal in the Y-axis direction.
実施例 １
Ｙ＝t1/3、曲線部分１０、直線部分４の割合か
ら成る曲線を結合して周期関数にした第１ａ図に
示す様な波形をデイジタルの任意波形発生器によ
り形成した。この10KHzの波によつて50MHzの正
弦波を変調し偏向電極に印加した（第１ｂ図）。
この時の回路構成を第９図に示す。この時の合成
波の振幅は50Vであつた。これにより長さ４mmの
線状化ビームが形成された電子ビーム５インチ径
（100）シリコン基板上に、1.3μｍ厚のSiO2を堆積
し、その上に0.6μｍの多結晶シリコン、キヤツプ
膜として0.6μｍのシリコン酸化膜を形成したもの
を用いた。これを前記の変調した高速偏向電子ビ
ームでアニールした。計算の結果に示す通り、中
央部より少しはなれた所にわずかに温度の高いこ
とを示す領域が認められたものの幅４mmにわたつ
て均一なシリコン再結晶層が得られた。またシリ
コン基板上のシリコン酸化膜に一部開孔を持たせ
たシード付の基板に於ては、溶融時にシリコン基
板方位の情報を受けついで、シリコン酸化膜上に
於ても大面積の（100）方位を持つシリコン単結
晶膜を得ることが出来た。Example 1 A waveform as shown in FIG. 1a, which is a periodic function obtained by combining curves consisting of a ratio of Y=t 1/3 , a curved portion 10, and a straight line portion 4, was formed using a digital arbitrary waveform generator. A 50 MHz sine wave was modulated by this 10 KHz wave and applied to the deflection electrode (Figure 1b).
The circuit configuration at this time is shown in FIG. The amplitude of the composite wave at this time was 50V. As a result, a linear beam of 4 mm in length was formed using an electron beam. 1.3 μm thick SiO 2 was deposited on a 5 inch diameter (100) silicon substrate, and 0.6 μm polycrystalline silicon was deposited on top of it as a cap film. A 0.6 μm silicon oxide film was used. This was annealed using the above-mentioned modulated high-speed deflection electron beam. As shown in the calculation results, a uniform recrystallized silicon layer was obtained over a width of 4 mm, although a slightly higher temperature region was observed at a distance from the center. In addition, in a seeded substrate in which the silicon oxide film on the silicon substrate has some openings, information on the orientation of the silicon substrate is received during melting, and even on the silicon oxide film, a large area (100 ) orientation was successfully obtained.
実施例 ２
前の変調波は、正又は負方向のみ定義されてい
る。しかも微係数が急激にかわるところが第１ａ
図のＡ点で示すように存在する。この部分では変
調波は丸みが出易くなり、これは、この部分にピ
ークの滞在確率の増加をもたらす。Example 2 The previous modulated wave is defined only in the positive or negative direction. Moreover, the point where the differential coefficient changes rapidly is 1a.
It exists as shown by point A in the figure. In this part, the modulated wave tends to be rounded, which increases the probability that the peak will stay in this part.
これをさけるためには、変調波を正、負とも定
義する事により、急激な変化をさけることが出来
る。第１０図にこの変調波の例を示す。 In order to avoid this, sudden changes can be avoided by defining the modulated wave as both positive and negative. FIG. 10 shows an example of this modulated wave.
実施例 ３
前実施例で述べた困難をさける別の手段とし
て、例えば正のみに定義された変調波を正方向に
一定値ずらすことも可能である。このようにする
ことによりたとえある部分に予期しないピークの
集中があつてもこの効果を減ずることが可能であ
る。Embodiment 3 As another means for avoiding the difficulties described in the previous embodiment, it is also possible to shift a modulated wave defined only as positive by a certain value in the positive direction, for example. By doing so, even if there is an unexpected concentration of peaks in a certain part, this effect can be reduced.
実施例 ４
前述のような計算方法を逆にたどつていく事に
よつて、電子ビーム強度分布が完全に平坦になる
ような周期関数を求める事も可能である。第１１
図にこの波形と前述のt1/3と直線部より成り立つ
波形を同時に示す。Embodiment 4 By retracing the calculation method described above, it is also possible to obtain a periodic function that makes the electron beam intensity distribution completely flat. 11th
The figure shows this waveform and the waveform formed by the above-mentioned t 1/3 and the straight line portion at the same time.
この波形変調した電子ビームでアニールした結
果は、実施例１の場合に比して均一溶融幅がせま
くなつた。これは周辺よりの熱放散のためであ
り、周辺を２次曲線的に持ちあげて、中央部より
10〜20％ビーム強度を上げることにより良好なア
ニール結果が得られた。 As a result of annealing with this waveform-modulated electron beam, the uniform melting width was narrower than in Example 1. This is for heat dissipation from the periphery, and the periphery is lifted up in a quadratic curve, and the center is lower than the center.
Good annealing results were obtained by increasing the beam intensity by 10-20%.
実施例４で示した様に、アニールビームの強度
分布は必ずしも平坦な方がよいわけでなく、両端
を強めにした方が良い。この量は熱放散の特度に
依存するものであり、多結晶シリコン下の絶縁膜
厚が厚い場合ほど小さくなることが予想される。
従つて、本発明は、変調波形を必ずしもｙ＝t1/3
を基本としたものに限定するものではなく、この
趣旨を逸脱しないものは含まれる。
As shown in Example 4, it is not necessarily better for the intensity distribution of the annealing beam to be flat, but it is better to make it stronger at both ends. This amount depends on the characteristics of heat dissipation, and is expected to be smaller as the insulating film under the polycrystalline silicon is thicker.
Therefore, in the present invention, the modulation waveform is not necessarily y=t 1/3
It is not limited to those based on , but includes anything that does not deviate from this spirit.
またｙ＝t1/3で関数を形成してもその定義域を
変えることによつてかわる。例えばｙ＝t1/5を定
義域をせまくしておいて、あとで規格化すること
によつてt1/3の形に似せることもできる。従つて
このような本質的でない操作によつて出来る波形
であつてもよい。 Also, even if a function is formed with y=t 1/3 , it can be changed by changing its domain. For example, it is possible to make the domain similar to t 1/3 by narrowing the domain of y=t 1/5 and normalizing it later. Therefore, the waveform may be generated by such non-essential operations.
本発明の波形ポイントは、中心附近に搬送波の
ピークがこない様に、変調波が中央を通過する時
間を出来るだけ短かくすること及び端部に比較的
多くの搬送波ピークを持つてくるためｔ−Ｙ曲線
の頂部に平坦又は平坦に近い部分を持たせること
である。 The waveform points of the present invention are to make the time for the modulated wave to pass through the center as short as possible so that the peak of the carrier wave does not occur near the center, and to have a relatively large number of carrier wave peaks at the ends. The idea is to have a flat or nearly flat portion at the top of the Y curve.
上記実施例４で示した様に電子滞在確認から逆
に変調波形を求める事が出来るので、一部に周期
的にビーム強度の高い所をつくつておいてこの部
分と基板シード部を合わせながらアニールするこ
とによつて、シーデイグエピタキシを効率よく行
う事も可能である。 As shown in Example 4 above, the modulation waveform can be obtained from the confirmation of electron residence, so periodically create a part with high beam intensity and anneal while aligning this part with the substrate seed part. By doing so, it is also possible to perform seeding epitaxy efficiently.
第１図は本発明に用いる電子ビームの高速偏向
用の振幅変調された電気的信号波形図でありａは
変調波形図、ｂは合成波形図、第２図乃至第５図
はそれぞれ従来装置の問題点を説明するためのも
ので第２図は疑似線状ビーム形成原理を示す模式
図、第３図は疑似線状ビームの長さと試料表面温
度との関係を示す特性図、第４図はビーム高速偏
向中心からの距離と試料表面温度との関係を示す
特性図、第５図は基本波周波数をパラメータとし
た時のビーム高速偏向中心からの距離と試料表面
温度との関係を示す特性図、第６図は正弦波で電
子ビームを偏向させた時の各位置での電子の滞在
確率を示す図、第７図はＹ＝t1/3と平坦部を合成
した変調波形と各位置でのビーム強度の関係を示
す図、第８図は本発明の実施例に用いた電子ビー
ムアニール装置の構成図、第９図は本発明の実施
例に用いた回路構成図、第１０図は改良した変調
波を示す図、第１１図は電子滞在確率を完全平坦
化するための変調波形を示す図である。
１……電子銃、２……対物レンズ、３……試
料、４……偏向電波、５……アパーチユア、６…
…ブランキング電極、７，７′……高速偏向電
極、。
FIG. 1 is an amplitude-modulated electrical signal waveform diagram for high-speed deflection of an electron beam used in the present invention, a is a modulation waveform diagram, b is a composite waveform diagram, and FIGS. 2 to 5 are diagrams of the conventional device. Figure 2 is a schematic diagram showing the principle of pseudo-linear beam formation, Figure 3 is a characteristic diagram showing the relationship between the length of the quasi-linear beam and the sample surface temperature, and Figure 4 is for explaining the problem. A characteristic diagram showing the relationship between the distance from the beam high-speed deflection center and the sample surface temperature. Figure 5 is a characteristic diagram showing the relationship between the distance from the beam high-speed deflection center and the sample surface temperature when the fundamental wave frequency is used as a parameter. , Figure 6 is a diagram showing the residence probability of electrons at each position when the electron beam is deflected by a sine wave, and Figure 7 is a diagram showing the modulation waveform that combines Y = t 1/3 and the flat part and at each position. Fig. 8 is a diagram showing the configuration of the electron beam annealing apparatus used in the embodiment of the present invention, Fig. 9 is a diagram showing the circuit configuration used in the embodiment of the present invention, and Fig. 10 is a diagram showing the structure of the electron beam annealing device used in the embodiment of the present invention. FIG. 11 is a diagram showing a modulated waveform for completely flattening the electron residence probability. 1... Electron gun, 2... Objective lens, 3... Sample, 4... Deflected radio wave, 5... Aperture, 6...
...Blanking electrode, 7,7'...High speed deflection electrode.
Claims (1)
質半導体薄膜に電子ビームを振幅変調させた電気
信号により一方向に偏向すると共にこれを交差す
る方向に該ビームを走査して、アニールし、半導
体単結晶層を形成するにあたり、その変調波とし
てｙ＝t1/E（時間ｔ、振幅ｙ、Ｅ＞２）及びこれに
続く直線部分を持つ関数を基本とする周期関数波
形を用いることを特徴とする半導体単結晶層の製
造方法。1 An electron beam is deflected in one direction by an amplitude-modulated electric signal onto a polycrystalline or amorphous semiconductor thin film formed on an insulating substrate, and the beam is scanned in a direction crossing the electron beam to anneal the semiconductor. In forming the single crystal layer, a periodic function waveform based on a function having y=t 1/E (time t, amplitude y, E>2) and a straight line portion following this is used as the modulating wave. A method for manufacturing a semiconductor single crystal layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60082299A JPS61241910A (en) | 1985-04-19 | 1985-04-19 | Manufacture of semiconductor single crystal layer |
| US06/762,374 US4662949A (en) | 1985-02-15 | 1985-08-05 | Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam |
| US06/904,942 US4746803A (en) | 1985-02-15 | 1986-09-08 | Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60082299A JPS61241910A (en) | 1985-04-19 | 1985-04-19 | Manufacture of semiconductor single crystal layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61241910A JPS61241910A (en) | 1986-10-28 |
| JPH0249534B2 true JPH0249534B2 (en) | 1990-10-30 |
Family
ID=13770669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60082299A Granted JPS61241910A (en) | 1985-02-15 | 1985-04-19 | Manufacture of semiconductor single crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61241910A (en) |
-
1985
- 1985-04-19 JP JP60082299A patent/JPS61241910A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61241910A (en) | 1986-10-28 |
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