JPH0250066B2 - - Google Patents
Info
- Publication number
- JPH0250066B2 JPH0250066B2 JP58045600A JP4560083A JPH0250066B2 JP H0250066 B2 JPH0250066 B2 JP H0250066B2 JP 58045600 A JP58045600 A JP 58045600A JP 4560083 A JP4560083 A JP 4560083A JP H0250066 B2 JPH0250066 B2 JP H0250066B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- metal
- amorphous silicon
- bonding
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
Landscapes
- Laminated Bodies (AREA)
- Joining Of Glass To Other Materials (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】
ａ 産業上の利用分野
本発明は、金属とガラスを、厚さ方向の精度を
精密に維持し、比較的低温で、強力且つ気密に接
合する方法に関する。DETAILED DESCRIPTION OF THE INVENTION a. Field of Industrial Application The present invention relates to a method for strongly and airtightly joining metal and glass at a relatively low temperature while precisely maintaining accuracy in the thickness direction.
ｂ 従来例
金属とガラスを強力且つ気密に接合する方法と
して、ガラスにコパールガラス或いは軟質ガラス
（低融点ガラス）を用い、これ等が溶融し掛つた
状態で接合する方法が知られている。b. Conventional Example As a method for strongly and airtightly bonding metal and glass, a method is known in which copal glass or soft glass (low melting point glass) is used as the glass, and the bonding is carried out in a state where the glass is about to melt.
この方法は、厚さ寸法精度が余り良くなく、予
め決められた間隙に上記のガラスを充填して接合
する場合には良いが、金属板とガラス板の接合後
の厚さ寸法を精密に得たい場合には使えない。更
にこの方法では接合時に、コパールガラスで800
〜1100℃、軟質ガラスで400〜600℃の温度を必要
とする為、この温度で大気中に酸化したり、溶融
したりする金属は使用出来ない欠点があつた。 This method does not have very good thickness dimensional accuracy, and is good for filling a predetermined gap with the above-mentioned glass for bonding, but it does not allow accurate measurement of the thickness after bonding between the metal plate and the glass plate. You can't use it if you want. Furthermore, with this method, when bonding, 800
Since it requires a temperature of ~1100℃, and 400 to 600℃ for soft glass, it had the disadvantage that metals that would oxidize or melt in the atmosphere at this temperature could not be used.
この他に接合方法として、陽極接合がある。こ
の方法によれば厚さ方向の寸法の精度は極めて高
く、接合作業時の温度も400℃以下と低い。しか
し乍ら、強力に接合出来る物質が現在迄に知られ
ている範囲でシリコンとガラスに限られ、これ以
外の物質、例えば金属とガラスは接合強度が弱い
欠点があつた。 Other bonding methods include anodic bonding. According to this method, the accuracy of the dimension in the thickness direction is extremely high, and the temperature during the bonding operation is low at 400°C or less. However, the materials known to date that can be strongly bonded are limited to silicon and glass, and other materials, such as metal and glass, have the disadvantage of weak bonding strength.
ｃ 発明の目的
本発明で解決しようとする技術的課題は、金属
とガラスを、厚さ方向の精度を精密に維持し、比
較的低温で、強力且つ気密に接合することであ
る。c. Purpose of the Invention The technical problem to be solved by the present invention is to bond metal and glass strongly and airtightly at a relatively low temperature while maintaining precision in the thickness direction.
ｄ 発明の構成
従来、ステンレス、アルミニウム、銅等の金属
板表面にアモルフアスシリコン膜を形成する技術
が知られているが、この技術によればアモルフア
スシリコン膜を強度に金属板に密着できる。この
点に着目し、本発明では、この技術を用いて金属
表面にアモルフアスシリコン膜を形成し、この膜
を介し上記陽極接合技術を用いてガラスを接合す
るようにしたことにある。d.Structure of the Invention Conventionally, a technique for forming an amorphous silicon film on the surface of a metal plate made of stainless steel, aluminum, copper, etc. is known, and according to this technique, the amorphous silicon film can be strongly adhered to the metal plate. Focusing on this point, the present invention uses this technique to form an amorphous silicon film on a metal surface, and then bonds glass using the anodic bonding technique described above through this film.
ｅ 実施例
以下図面に従い本発明を説明する。第１図は金
属板１の表面にアモルフアスシリコン膜２を形成
する工程を示す。金属板１には、ステンレス、ア
ルミニウム、銅等多くの金属が利用出来る。アモ
ルフアスシリコン膜２はグロー放電、CVD法等
により金属板１表面に大なる密着強度で形成され
る。このときの温度は150〜300℃と比較的低温で
ある。e Examples The present invention will be described below with reference to the drawings. FIG. 1 shows the process of forming an amorphous silicon film 2 on the surface of a metal plate 1. As shown in FIG. Many metals such as stainless steel, aluminum, and copper can be used for the metal plate 1. The amorphous silicon film 2 is formed with high adhesion strength on the surface of the metal plate 1 by glow discharge, CVD, or the like. The temperature at this time is relatively low, 150 to 300°C.
第２図は、金属板１にその表面に形成されたア
モルフアスシリコン膜２を介しガラス３を接合す
る工程を示す。金属板１表面のアモルフアスシリ
コン膜２上にガラス板３を載せ、接合圧力を加え
た状態で、金属板１とガラス板３との間に電圧を
印加して陽極接合を行う。このときの作業温度は
400℃と比較的低温で強力な接合が行える。上記
第１図に示す工程では、アモルフアスシリコン膜
２の厚さを0.1〜1μｍの精度で制御出来、また、
第２図に示す工程では、接着物がアモルフアスシ
リコン膜２とガラス板３との間に介在せず、接合
による金属板１、ガラス板３等の厚さ変化も無視
出来る程小さい。 FIG. 2 shows the process of bonding glass 3 to metal plate 1 via amorphous silicon film 2 formed on its surface. A glass plate 3 is placed on the amorphous silicon film 2 on the surface of the metal plate 1, and with bonding pressure applied, a voltage is applied between the metal plate 1 and the glass plate 3 to perform anodic bonding. The working temperature at this time is
Strong bonding can be achieved at a relatively low temperature of 400℃. In the process shown in FIG. 1 above, the thickness of the amorphous silicon film 2 can be controlled with an accuracy of 0.1 to 1 μm, and
In the process shown in FIG. 2, no adhesive material is present between the amorphous silicon film 2 and the glass plate 3, and changes in the thickness of the metal plate 1, glass plate 3, etc. due to bonding are negligibly small.
従つて、接合後の全体の厚さは接合前の材料の
厚さで決められ、アモルフアスシリコン膜２が形
成された金属板１と、ガラス板３との厚さ方向の
精度を精密に維持して接合することが出来る。更
に、比較的低温度で且つ強力な接合が出来る。 Therefore, the overall thickness after bonding is determined by the thickness of the materials before bonding, and the precision in the thickness direction between the metal plate 1 on which the amorphous silicon film 2 is formed and the glass plate 3 is precisely maintained. It can be joined by Furthermore, strong bonding can be achieved at relatively low temperatures.
第３図は金属板１を２枚のガラス板３，３′で
挟んで接合した場合を示す。金属板１の上面、下
面に夫々アモルフアスシリコン膜２，２′を形成
した後、先の場合と同様２枚のガラス板３，３′
を陽極接合によつて接合する。 FIG. 3 shows a case where a metal plate 1 is sandwiched and bonded between two glass plates 3, 3'. After forming amorphous silicon films 2 and 2' on the upper and lower surfaces of the metal plate 1, respectively, two glass plates 3 and 3' are formed as in the previous case.
are bonded by anodic bonding.
第４図はガラス板３を２枚の金属板１，１′で
挟んで接合した場合を示す。金属板１の上面と、
金属板１′の下面にアモルフアスシリコン膜２，
２′を形成し、夫々のアモルフアス膜面が向い合
うよう金属板１，１′でガラス板３を挟んで陽極
接合する。 FIG. 4 shows a case where a glass plate 3 is sandwiched between two metal plates 1 and 1' and joined together. The upper surface of the metal plate 1,
Amorphous silicon film 2 on the lower surface of metal plate 1',
A glass plate 3 is sandwiched between the metal plates 1 and 1' so that the respective amorphous film surfaces face each other, and anodic bonding is performed.
第５図及び第６図は圧力検出素子に本発明方法
を応用した実施例である。第５図において、４は
エツチング等で断面梯形状の空室が形成された金
属ブロツクで、薄肉部分４ａが圧力を受けるダイ
アフラム部分となる。アモルフアスシリコン膜２
は金属ブロツク４下側の厚肉部周面に形成され、
この部分において、圧力導孔５ａが設けられたガ
ラスブロツク５と陽極接合される。尚、アモルフ
アスシリコン膜２は、金属ブロツク４にエツチン
グが施される前に形成してもよい。 FIGS. 5 and 6 show an embodiment in which the method of the present invention is applied to a pressure sensing element. In FIG. 5, reference numeral 4 denotes a metal block in which a cavity with a ladder-shaped cross section is formed by etching or the like, and a thin wall portion 4a serves as a diaphragm portion receiving pressure. Amorphous silicon film 2
is formed on the peripheral surface of the thick part on the lower side of the metal block 4,
In this portion, it is anodically bonded to the glass block 5 provided with the pressure guide hole 5a. Note that the amorphous silicon film 2 may be formed before the metal block 4 is etched.
第６図は第５図に示す圧力検出素子に金属管を
接合したものを示す。６は圧力導入孔６ａが設け
られた金属管で、ガラスブロツク５側の端面にア
モルフアスシリコン膜２′が形成され、陽極接合
によりガラスブロツク５下面に接合される。 FIG. 6 shows the pressure detection element shown in FIG. 5 joined to a metal tube. Reference numeral 6 denotes a metal tube provided with a pressure introduction hole 6a, an amorphous silicon film 2' is formed on the end surface on the glass block 5 side, and is bonded to the lower surface of the glass block 5 by anodic bonding.
本実施例の場合、金属表面に形成されたアモル
フアスシリコン膜２，２′を介しガラスブロツク
５と金属ブロツク４或は金属管６を強力且つ気密
に接合でき、また、比較的低温で接合できる為金
属同志の溶接の場合に比較してダイヤフラム４ａ
に与える残留応力を小さくすることが出来る。 In the case of this embodiment, the glass block 5 and the metal block 4 or metal tube 6 can be strongly and airtightly bonded via the amorphous silicon films 2, 2' formed on the metal surface, and can be bonded at a relatively low temperature. diaphragm 4a compared to welding metals together.
It is possible to reduce the residual stress applied to the
ｇ 発明の効果
本発明によれば、金属とガラスを、接合の厚さ
方向精度を精密に維持し、比較的低温で、強力且
つ気密に接合できる。g Effects of the Invention According to the present invention, metal and glass can be joined strongly and airtightly at a relatively low temperature while maintaining precision in the thickness direction of joining.
第１図は本発明において、金属板表面にアモル
フアスシリコン膜を形成する工程を示す斜視図、
第２図は第１図に示す工程において金属板表面に
形成されたアモルフアスシリコン膜面上にガラス
板を陽極接合により接合する工程を示す斜視図、
第３図及び第４図は本発明の実施例を示す斜視
図、第５図及び第６図は本発明の実施例を示す断
面図である。
１……金属板、２，２′……アモルフアスシリ
コン膜、３……ガラス板、４……金属ブロツク、
５……ガラスブロツク、６金属管。
FIG. 1 is a perspective view showing the process of forming an amorphous silicon film on the surface of a metal plate in the present invention;
FIG. 2 is a perspective view showing the step of bonding a glass plate to the amorphous silicon film surface formed on the surface of the metal plate by anodic bonding in the step shown in FIG. 1;
3 and 4 are perspective views showing an embodiment of the invention, and FIGS. 5 and 6 are sectional views showing an embodiment of the invention. 1... Metal plate, 2, 2'... Amorphous silicon film, 3... Glass plate, 4... Metal block,
5...Glass block, 6 Metal tube.
Claims (1)
し、このアモルフアスシリコン膜面にガラスを陽
極接合により接合したことを特徴とする金属とガ
ラスの接合方法。1. A method for joining metal and glass, characterized in that an amorphous silicon film is formed on a metal material, and glass is joined to the surface of the amorphous silicon film by anodic bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58045600A JPS59174549A (en) | 1983-03-18 | 1983-03-18 | Method for joining metal and glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58045600A JPS59174549A (en) | 1983-03-18 | 1983-03-18 | Method for joining metal and glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59174549A JPS59174549A (en) | 1984-10-03 |
| JPH0250066B2 true JPH0250066B2 (en) | 1990-11-01 |
Family
ID=12723841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58045600A Granted JPS59174549A (en) | 1983-03-18 | 1983-03-18 | Method for joining metal and glass |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59174549A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2527834B2 (en) * | 1990-07-20 | 1996-08-28 | 三菱電機株式会社 | Anodic bonding method |
| US7192841B2 (en) | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
| JP4695014B2 (en) * | 2003-12-02 | 2011-06-08 | ボンドテック株式会社 | JOINING METHOD, DEVICE PRODUCED BY THIS METHOD, AND JOINING DEVICE |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| CN110246769B (en) * | 2019-05-10 | 2020-09-11 | 太原理工大学 | In-situ metallization eutectic bonding method based on cationic conductive metal and glass surface |
-
1983
- 1983-03-18 JP JP58045600A patent/JPS59174549A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59174549A (en) | 1984-10-03 |
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