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JPH025009B2 - - Google Patents
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JPH025009B2 - - Google Patents

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Publication number
JPH025009B2
JPH025009B2 JP59024805A JP2480584A JPH025009B2 JP H025009 B2 JPH025009 B2 JP H025009B2 JP 59024805 A JP59024805 A JP 59024805A JP 2480584 A JP2480584 A JP 2480584A JP H025009 B2 JPH025009 B2 JP H025009B2
Authority
JP
Japan
Prior art keywords
etching
solution
acid
pit
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59024805A
Other languages
Japanese (ja)
Other versions
JPS60169130A (en
Inventor
Nobuyoshi Kanzaki
Kenji Tooyama
Satoru Kitamura
Katsumi Oohara
Tetsuo Sonoda
Takao Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59024805A priority Critical patent/JPS60169130A/en
Publication of JPS60169130A publication Critical patent/JPS60169130A/en
Publication of JPH025009B2 publication Critical patent/JPH025009B2/ja
Granted legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は電解コンデンサの、特に中高圧用
(100W.V.以上)の陽極用アルミニウム箔のエツ
チング方法に関するものである。 従来例の構成とその問題点 従来のこの種のアルミ電解コンデンサにおいて
は、その静電容量を高めるか、あるいは小形化、
価格の低減、その他諸特性の向上のためにアルミ
ニウム電極箔にはエツチング処理を行つて表面積
を拡大したものを使用している。 従来よりアルミ電解コンデンサ用電極箔の表面
積を拡大するために種々の方法が考察され実施さ
れており、最も一般的な方法としてはアルミニウ
ムを塩酸、食塩などの塩化水溶液中で陽極的に電
解エツチングする方法がとられている。 ところでアルミ電解コンデンサの内、特に中高
圧用エツチング箔としての製造条件は、エツチン
グ後の化成処理により非常に厚い陽極酸化皮膜が
形成されることで、アルミニウム箔面の非常に微
細なエツチングピツト(エツチングにより発生し
たアルミニウム表面および内部の凹凸)が埋めら
れてしまい、エツチング倍率に寄与できなくなる
ことの無いように設定されている。即ち、中高圧
用電極箔の理想的なエツチングピツトの形状は、
エツチングピツト径が1.3μm(化成電圧600Vま
で使用する場合)でエツチングピツトがトンネル
ピツト(アルミニウム箔表面から裏面さでエツチ
ングピツトが貫通した状態をさす)であることが
一般に理想と考えられている。 本発明者らも理想的なエツチングピツト状態を
目指し種々検討した結果、第1段エツチングとし
て塩酸水溶液に蓚酸、硫酸、リン酸、硼酸等の皮
膜形成性物質を添加し、直流電流にてエツチング
を行つた後、第2段エツチングとしてアルミニウ
ムよりイオン化傾向の大きい金属の塩化物である
塩化ナトリウム、もしくは塩化カリウム・塩化ア
ンモニウム等の水溶液で直流電流エツチングを行
い、この中間で熱処理あるいは化学処理により箔
表面に酸化皮膜を形成させる工程を2〜6回設け
るような工程を経て電極箔を製造していた。 しかし従来のエツチング方法では、エツチング
の進行とともに表面溶解が多く進行したり、また
エツチングピツト径が化成電圧に対し小さすぎて
充分な表面拡大倍率(以下倍率と呼ぶ)が得られ
なかつたり、もしくは倍率は拡大してもエツチン
グピツト形状が制御されずに箔内部において深さ
方向以外にエツチングピツトが枝分かれ的に進行
しすぎて、電極箔強度を著しく減少させる等の点
が問題点となつており、電極箔倍率を向上させる
ことによりアルミ電解コンデンサの小形化実現の
上で大きな障害となつていた。 ここで従来のエツチング方法の例を更に詳細に
具体的に説明していくと次のようになる。 即ち、従来第1段を塩酸溶液中で直流電流エツ
チング、第2段を同じく塩酸溶液中で直流電流エ
ツチングした場合(第1図、第2図の例−1参
照)もしくは第2段を塩酸液中で化学エツチング
した場合(第1図、第2図の例−3参照)には、
利点として電極箔のエツチングピツトのトンネル
化及び電極箔の機械的強度は優れているが、欠点
として溶解減量を増加させても容量が初期の段階
で飽和してしまい高倍率が得られないという問題
があつた。これは塩酸をエツチング液として用い
た場合、電極箔表面への皮膜形成性物質を添加し
たもエツチングによるアルミニウムの溶解減量が
増加するに従つてアルミ表面の活性化が進み、エ
ツチングが表面溶解的に進行し、箔表面上のエツ
チングピツトが破壊されるのと、トンネル方向以
外の横方向への枝分かれピツトがほとんど発生し
ないためである。 次に従来第1段を塩酸溶液中で直流電流エツチ
ング、第2段をアルミニウムよりイオン化傾向の
大きい金属の塩化物、もしくは塩化アンモニウム
からなる中性エツチング液中で直流電流エツチン
グした場合(第1図、第2図の例−2)には、利
点として高倍率が得られるが、欠点としてアルミ
ニウムの溶解減量の増加とともに箔の機械的強度
が急激に減少するため、溶解減量は8mg/cm2が限
度であり、それ以上の倍率向上は制限されてい
た。これは中性エツチング液中に形成される箔表
面の酸化皮膜が厚く、従つて表面の水和皮膜か比
較的に箔表面上に広い範囲に亘つて表面活性度の
不均一性を生じ、そこに形成されるエツチングピ
ツトは既成のエツチングピツトのトンネル方向へ
の成長と同時に、表面活性度の不均一性より生じ
る活性点より新たなエツチングピツトを発生させ
ることにより、これが箔のトンネル(深さ)方向
とは垂直な横方向への枝分かれ状エツチングピツ
トとして発展し過度の成長しすぎて互いにエツチ
ングピツトどうしが連結し合い、電極箔の機械的
強度を維持することができなくなるためである。
また中性エツチング液では表面活性度の不均一性
が、比較的広い範囲で起きやすいことから、塩酸
エツチング液の場合と比較すると、エツチングピ
ツト内部のピツト径調整のための全面溶解の機能
が低く、溶解がエツチングピツトの先端に集中し
やすいために、エツチングピツト径が細くなり、
後に陽極酸化皮膜を形成した際、倍率に寄与しな
いエツチングピツトが多く発生し、倍率向上を阻
害する要因として問題となつていた。 発明の目的 本発明はこのような従来の問題点を解決するも
ので、エツチング時の表面溶解を抑制しつつ、エ
ツチングピツトを箔に対して垂直な深さ方向と、
これに垂直な横方向とに制御された状態で成長さ
せ、使用電圧に応じたエツチングピツト形状に調
整することで、電極箔の高倍率化、高強度化を図
り、アルミ電解コンデンサの小形化に要求される
相反する上記の特性を同時に満足させることを目
的とする。 発明の構成 この目的を達成するため本発明は、塩酸水溶液
もしくはその水溶液に蓚酸、硫酸、リン酸、硼酸
またはそれらの塩のうち少なくとも一つの皮膜形
成性物質を添加したエツチング液中で直流電流を
通電してエツチングを行う第1段エツチング工程
と、アルミニウムよりイオン化傾向の大きい金属
の塩化物、もしくは塩化アンモニウムからなるエ
ツチング液中で直流電流を通電してエツチングを
行う第2段エツチング工程とを有し、更に第3段
エツチングとして塩酸水溶液、もしくはその水溶
液に蓚酸、硫酸、リン酸、硼酸またはそれらの塩
のうち少なくとも一つの皮膜形成勢物質を添加し
た溶液、あるいは硝酸水溶液をエツチング液とし
て使用して化学エツチングを行うことにより効果
的なエツチングを行うことを発明した。ここでは
特に従来第2段エツチングが、塩酸エツチング液
による直流電流エツチング単独、もしくは塩酸エ
ツチング液による化学エツチング単独、あるいは
中性エツチング液による直流電流エツチング単独
であつたものを更に中性エツチング液による直流
電流エツチングと塩酸エツチング液による化学エ
ツチングとで組み合わせて行い、各エツチング法
の利点を取り入れながらエツチング機能を分離さ
せて効果を高めるようにした。 実施例の説明 以下本発明の実施例、特に基本的な方法につい
て説明する。 先づ第2段として、中性エツチング液による直
流電流エツチングで倍率を向上させるためのエツ
チングピツト形状の構造の基礎(エツチングピツ
トの深さ方向へのトンネル化及びこれと垂直方向
への枝分かれピツトの数と長さ)を効果的に形成
し、更にこれに引き続き新たに第3段として塩酸
エツチング液による化学エツチングで、箔の機械
強度をあまり減少させることなしに従来より溶解
減量を増加させて、化成電圧に応じたエツチング
ピツトのピツト径拡大による容量の向上とトンネ
ルピツトのトンネル化の向上とを効果的に行える
ことを発見した。 ここでこのエツチング機能を充分効果的に果た
す目的のためのエツチングの全体の構成を更に詳
細に記すと、以下に示すような3段階より成るエ
ツチング方法となる。 即ち第1段では、酸化性の添加剤を含む高温の
塩酸中にて、孔食電位以上の高電流密度で電流を
印加する条件下、酸化性の添加剤によつて箔表面
上に形成された多孔質酸化皮膜の凹凸を利用する
ことにより、エツチングピツトの発生起点を高密
度にしかも均一に発生させ、引き続き同一の水溶
液中で孔食電位以下の低電流密度で電流を印加す
る条件下、酸化性の添加剤によつて箔表面上に形
成された酸化皮膜を防食膜として、エツチングピ
ツト発生起点を箔表面上との表面状態の不均一化
を進め、表面溶解速度より孔の溶解速度の方が速
く支配的な条件下でエツチングピツトを深さ方向
に進行させ、エツチングピツトのトンネル化を図
る。 第2段では、塩化物イオンを含む中性塩の高温
水溶液中にて低電流密度で電流を印加する条件
下、溶液によつて箔表面上に形成された酸化皮膜
を防食膜として、エツチングピツト内部と箔表面
との表面の活性度の不均一化を進め、表面溶解速
度より孔の溶解速度の方が速く支配的なエツチン
グ条件下において、エツチングピツトの深さ方向
へのトンネル化及び深さ方向に対して垂直方向へ
の腐食を進行させる。ここでは塩酸溶液を用いる
場合よりも、より表面の腐食を抑制しやすい状況
を作り出して、表面溶解を防止しながらエツチン
グピツトの深さ方向のみならず、深さ方向と垂直
な方向にも新たな若干発生、成長させ、同時に総
べての形成されてエツチングピツト径を拡大する
機能を果たす。 第3段では、酸化性の添加剤を含む高温の塩酸
中に浸漬処理する条件下、酸化性の添加剤によつ
て箔表面上に形成された酸化皮膜を防食膜とし
て、エツチングピツト内壁面と箔表面上との表面
状態の不均一化を進め、表面溶解よりエツチング
ピツト内部の溶解速度の方を早く支配的にして、
エツチングをエツチングピツトの径方向に進行さ
せる。 ここでは塩化物溶液中での電気エツチングの場
合よりも、よりトンネルピツト内壁のエツチング
を促進かつ均一に進行させることができ、またエ
ツチングピツト径拡大方向以外への新たなエツチ
ングピツトの発生及び成長を抑制していくこと
で、目的の使用電圧に応じたエツチングピツト径
の拡大と調整を総べての発生エツチングピツトに
対して可能する。またこれにより化成後のエツチ
ングトンネルピツトの貫通性を保持することが可
能となり、高容量と低いtanδを得ることができ
る。 なお従来のエツチング法(例2)と本発明によ
るエツチング法(例4)とで形成されるエツチン
グピツト形状の差を比較したものが第4図(エツ
チング法によるエツチングピツト径とピツト数と
の関係)であり、本発明のエツチング法によりエ
ツチングピツト径が拡大していることが分かる。 以下本発明に基づく具体的は実施例示す。 実施例 1 純度99.99%、厚さ100μmのアルミ焼鈍箔を試
料とし、第1段エツチングを5%塩酸に0.03%蓚
酸を添加した液温80℃の水溶液で、電流密度150
mA/cm2の直流を80秒印加して行つた後、同一水
溶液中で電流密度40mA/cm2の直流を10分間印加
して行つたエツチング箔について、硼酸溶液中で
370V化成した後、エツチング減量、静電容量、
強度について測定した結果を表−1に示す。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method for etching aluminum foil for anodes of electrolytic capacitors, particularly for medium and high voltages (100 W.V. or higher). Conventional configurations and their problems Conventional aluminum electrolytic capacitors of this type either have to increase their capacitance, or are smaller or smaller.
In order to reduce the price and improve other characteristics, the aluminum electrode foil is etched to increase its surface area. Various methods have been considered and implemented in the past to expand the surface area of electrode foils for aluminum electrolytic capacitors, and the most common method is electrolytic etching of aluminum anodically in an aqueous chloride solution such as hydrochloric acid or common salt. A method is being taken. By the way, the manufacturing conditions for aluminum electrolytic capacitors, especially as etched foils for medium and high voltages, are that a very thick anodic oxide film is formed by chemical conversion treatment after etching, and very fine etching pits (due to etching) are formed on the aluminum foil surface. The setting is made so that the generated irregularities on the aluminum surface and inside will not be buried and become unable to contribute to the etching magnification. In other words, the ideal etching pit shape for medium-high voltage electrode foil is
It is generally considered ideal that the etching pit diameter is 1.3 μm (when used at a formation voltage of up to 600 V) and that the etching pit is a tunnel pit (referring to the state in which the etching pit penetrates from the surface to the back of the aluminum foil). As a result of various studies aimed at creating an ideal etching pit state, the present inventors added a film-forming substance such as oxalic acid, sulfuric acid, phosphoric acid, or boric acid to an aqueous solution of hydrochloric acid as the first stage of etching, and etched with a direct current. After that, as a second stage of etching, direct current etching is performed using an aqueous solution of sodium chloride, which is a metal chloride that has a greater tendency to ionize than aluminum, or potassium chloride or ammonium chloride. Electrode foils have been manufactured through a process of forming an oxide film two to six times. However, in conventional etching methods, surface dissolution often progresses as etching progresses, and the etching pit diameter is too small relative to the formation voltage, making it impossible to obtain a sufficient surface enlargement magnification (hereinafter referred to as magnification), or the magnification is too small. Even when enlarged, the shape of the etching pits is not controlled, and the etching pits propagate too much branchingly in directions other than the depth direction inside the foil, significantly reducing the strength of the electrode foil. This has been a major obstacle in achieving miniaturization of aluminum electrolytic capacitors by improving the Here, an example of the conventional etching method will be explained in more detail as follows. That is, when conventionally the first stage was etched with a direct current in a hydrochloric acid solution and the second stage was etched with a direct current in a hydrochloric acid solution (see Example 1 in Figures 1 and 2), or the second stage was etched with a hydrochloric acid solution. In the case of chemical etching (see example 3 in Figures 1 and 2),
The advantages are that the etching pit of the electrode foil can be tunneled and the mechanical strength of the electrode foil is excellent, but the disadvantage is that even if the melt loss is increased, the capacity is saturated at an early stage and high magnification cannot be obtained. It was hot. This is because when hydrochloric acid is used as an etching solution, even if a film-forming substance is added to the surface of the electrode foil, the activation of the aluminum surface progresses as the amount of dissolution of aluminum increases due to etching, and the etching progresses due to surface dissolution. This is because the etching pits on the foil surface are destroyed as the etching progresses, and pits that branch in the lateral direction other than the tunnel direction are hardly generated. Next, conventionally, the first stage was etched with a direct current in a hydrochloric acid solution, and the second stage was etched with a direct current in a neutral etching solution consisting of ammonium chloride or a chloride of a metal that has a greater tendency to ionize than aluminum (Fig. 1). , Example 2) in Figure 2 has the advantage of obtaining a high magnification, but the disadvantage is that the mechanical strength of the foil rapidly decreases as the melt loss of aluminum increases, so the melt loss is only 8 mg/ cm2. This was the limit, and any further increase in magnification was restricted. This is because the oxide film formed on the foil surface in the neutral etching solution is thick, resulting in non-uniformity in surface activity over a relatively wide area on the foil surface due to the hydration film on the surface. The etching pits formed in the foil grow in the direction of the tunnel at the same time as the existing etching pits grow in the tunnel direction, and new etching pits are generated from active points caused by non-uniform surface activity. This is because the etching pits develop into branched etching pits in the vertical and lateral directions and grow excessively, causing the etching pits to connect with each other, making it impossible to maintain the mechanical strength of the electrode foil.
In addition, neutral etching solutions tend to cause non-uniformity in surface activity over a relatively wide range, so compared to hydrochloric acid etching solutions, the overall dissolution function for adjusting the pit diameter inside the etching pit is lower. Because the dissolution tends to concentrate at the tip of the etching pit, the diameter of the etching pit becomes narrower.
When an anodic oxide film was later formed, many etching pits were generated that did not contribute to the magnification, and this became a problem as a factor that hindered the improvement of the magnification. OBJECT OF THE INVENTION The present invention solves these conventional problems, and while suppressing surface dissolution during etching, the etching pits are aligned in the depth direction perpendicular to the foil.
By controlling the growth in the lateral direction perpendicular to this and adjusting the etching pit shape according to the voltage used, we are able to achieve higher magnification and strength of the electrode foil, which is required for the miniaturization of aluminum electrolytic capacitors. The purpose is to simultaneously satisfy the above contradictory characteristics. Structure of the Invention To achieve this object, the present invention provides an etching solution in which a direct current is applied to an aqueous solution of hydrochloric acid or an etching solution in which at least one film-forming substance selected from oxalic acid, sulfuric acid, phosphoric acid, boric acid, or a salt thereof is added to the aqueous solution. It has a first stage etching process in which etching is carried out by applying electricity, and a second stage etching process in which etching is carried out by passing a direct current in an etching solution consisting of a metal chloride or ammonium chloride, which has a greater tendency to ionize than aluminum. In the third stage etching, an aqueous solution of hydrochloric acid, a solution prepared by adding at least one film-forming substance selected from oxalic acid, sulfuric acid, phosphoric acid, boric acid or their salts to the aqueous solution, or an aqueous nitric acid solution is used as the etching solution. He invented an effective method of chemical etching. Here, in particular, the second stage etching conventionally consisted of direct current etching alone using a hydrochloric acid etching solution, chemical etching alone using a hydrochloric acid etching solution, or direct current etching alone using a neutral etching solution. A combination of current etching and chemical etching using a hydrochloric acid etching solution was used to take advantage of the advantages of each etching method while separating the etching functions to increase effectiveness. DESCRIPTION OF EMBODIMENTS Examples of the present invention, particularly basic methods, will be described below. First, as a second step, we will develop the basic structure of the etching pit shape (tunneling in the depth direction of the etching pit and the number of branching pits in the vertical direction) to improve the magnification by direct current etching using a neutral etching solution. This is followed by a new third stage of chemical etching using a hydrochloric acid etching solution, which increases the dissolution loss compared to the conventional method without significantly reducing the mechanical strength of the foil, and increases the formation voltage. It has been discovered that it is possible to effectively improve the capacity and the tunneling performance of a tunnel pit by increasing the pit diameter of the etching pit according to the requirements. Describing in more detail the overall structure of etching for the purpose of fully and effectively performing this etching function, the etching method consists of three steps as shown below. That is, in the first stage, the oxidizing additive forms on the foil surface under the condition that a current is applied at a high current density higher than the pitting corrosion potential in high-temperature hydrochloric acid containing the oxidizing additive. By utilizing the unevenness of the porous oxide film, etching pits are formed at high density and uniformly, and then oxidation is performed in the same aqueous solution under conditions where a current is applied at a low current density below the pitting potential. The oxide film formed on the foil surface by the anti-corrosion additive serves as an anti-corrosion film, and the etching pit generation point is made more uneven on the foil surface, and the pore dissolution rate is higher than the surface dissolution rate. The etching pit is advanced rapidly in the depth direction under prevailing conditions to form a tunnel in the etching pit. In the second stage, a current is applied at low current density in a high-temperature aqueous solution of a neutral salt containing chloride ions, and the oxide film formed on the foil surface by the solution is used as an anticorrosive film to form the inside of the etching pit. Under the dominant etching conditions, where the pore dissolution rate is faster than the surface dissolution rate, tunneling in the depth direction of the etching pit and Corrosion progresses in the vertical direction. Here, we create a situation that makes it easier to suppress surface corrosion than when using a hydrochloric acid solution, and while preventing surface dissolution, new slight effects are created not only in the depth direction of the etching pit but also in the direction perpendicular to the depth direction. It functions to generate, grow, and simultaneously expand the diameter of the etching pit. In the third stage, under conditions of immersion treatment in high-temperature hydrochloric acid containing an oxidizing additive, the oxide film formed on the foil surface by the oxidizing additive is used as an anticorrosive film, and the inner wall surface of the etching pit and the foil are coated. By making the surface condition more uneven and making the dissolution rate inside the etching pit faster and more dominant than the surface dissolution,
Etching progresses in the radial direction of the etching pit. Here, etching of the inner wall of the tunnel pit can be promoted and progressed more uniformly than in the case of electroetching in a chloride solution, and the generation and growth of new etching pits in directions other than the direction of expanding the etching pit diameter can be suppressed. By doing so, it is possible to expand and adjust the etching pit diameter in accordance with the intended voltage used for all etching pits. Moreover, this makes it possible to maintain the penetrability of the etching tunnel pit after chemical formation, making it possible to obtain high capacity and low tan δ. FIG. 4 (Relationship between etching pit diameter and number of pits by etching method) shows a comparison of the differences in the etching pit shapes formed by the conventional etching method (Example 2) and the etching method according to the present invention (Example 4). It can be seen that the etching pit diameter is enlarged by the etching method of the present invention. Specific examples based on the present invention will be shown below. Example 1 An aluminum annealed foil with a purity of 99.99% and a thickness of 100 μm was used as a sample, and the first stage etching was performed using an aqueous solution of 5% hydrochloric acid and 0.03% oxalic acid at a temperature of 80°C at a current density of 150.
Etching foil was etched by applying a direct current of mA/cm 2 for 80 seconds and then applying a direct current of 40 mA/cm 2 for 10 minutes in the same aqueous solution.
After 370V chemical formation, etching reduction, capacitance,
Table 1 shows the results of measuring strength.

【表】 なお箔強度は折曲げ強度によるもので、1.0R、
200g荷重、折曲げ角90゜により1往復で1回とし
た。 実施例 2 実施例1と同一の試料を用い、第1段エツチン
グを5%HClに0.03%蓚酸を添加した液温80℃の
水溶液で、電流密度150mA/cm2の直流を80秒印
加して行なつた後、第2段エツチングを2%塩化
アンモニウム液温90℃の水溶液で電流密度80m
A/cm2の直流を4分間印加して行つたエツチング
箔について、硼酸溶液中で370V化成した後エツ
チング溶解減量、静電容量、強度について測定し
た結果を表−2に示す。
[Table] The foil strength is based on the bending strength, 1.0R,
With a load of 200g and a bending angle of 90°, one reciprocation was made once. Example 2 Using the same sample as in Example 1, the first stage etching was carried out using an aqueous solution of 5% HCl and 0.03% oxalic acid at a temperature of 80°C, and applying direct current at a current density of 150 mA/cm 2 for 80 seconds. After this, a second stage of etching is performed using a 2% ammonium chloride aqueous solution at a temperature of 90°C at a current density of 80 m.
Table 2 shows the results of measurements of etching dissolution loss, capacitance, and strength after etching the etched foils by applying a direct current of A/cm 2 for 4 minutes at 370 V in a boric acid solution.

【表】 実施例 3 実施例1と同一の試料を用い、第1段エツチン
グを5%塩酸に0.03%蓚酸を添加した液温80℃の
水溶液で、電流密度150mA/cm2の直流を80秒印
加して行なつた後、第2段エツチングを5%塩酸
に0.03%蓚酸を添加した液温90℃の水溶液で6分
間浸漬処理して化学溶解したエツチング箔につい
て、硼酸溶液中で370V化成した後、エツチング
溶解減量、静電容量、強度について測定した結果
を表−3に示す。
[Table] Example 3 Using the same sample as in Example 1, the first stage etching was performed using an aqueous solution of 5% hydrochloric acid and 0.03% oxalic acid at a temperature of 80°C, and a direct current at a current density of 150 mA/cm 2 for 80 seconds. After this, the etching foil was chemically dissolved by immersion treatment for 6 minutes in an aqueous solution of 5% hydrochloric acid and 0.03% oxalic acid at a temperature of 90°C, and then chemically etched at 370V in a boric acid solution. Table 3 shows the results of measurements of etching dissolution loss, capacitance, and strength.

【表】 実施例 4 実施例1と同一の試料を用い、第1段エツチン
グを5%塩酸に0.03蓚酸を添加した液温80℃の水
溶液で、電流密度150mA/cm2の直流を70秒印加
して行つた後、第2段エツチングを2%塩化アン
モニウム液温90℃の水溶液で電流密度80mA/cm2
の直流を3分30秒印加して行つた後、第3段エツ
チングを5%塩酸に0.03%蓚酸を添加した液温90
℃の水溶液中で化学エツチングして(化学エツチ
ング温度・減量と容量との関係は第3図参照)
370V化成した後、エツチング溶解減量、静電容
量、強度について測定した結果を表−4に示す。
[Table] Example 4 Using the same sample as in Example 1, the first stage etching was performed using an aqueous solution of 5% hydrochloric acid and 0.03 oxalic acid at a temperature of 80°C, and applying direct current at a current density of 150 mA/cm 2 for 70 seconds. After that, the second stage etching was performed using a 2% ammonium chloride aqueous solution at a temperature of 90°C at a current density of 80 mA/cm 2
After applying a direct current for 3 minutes and 30 seconds, the third stage of etching was performed using a solution of 5% hydrochloric acid and 0.03% oxalic acid at a temperature of 90°C.
Chemically etched in an aqueous solution at ℃ (see Figure 3 for the relationship between chemical etching temperature, weight loss, and capacity).
Table 4 shows the results of measurements of etching dissolution loss, capacitance, and strength after 370V chemical formation.

【表】 表−4に示されるように本発明のエツチング方
法を用いれば、このように溶解減量を増加させて
も容量は飽和することなく比例して増加させるこ
とができ、しかも同時に強度を維持することが可
能となつた。(第1図、第2図の例4参照) 発明の効果 以上のように本発明のアルミ電解コンデンサ用
電極箔の方法でエツチングを行う場合と比較し、
8〜25%静電容量値を高くすることができてアル
ミ電解コンデンサ小形化が可能となり、同時にコ
ンデンサの製品とした場合のtanδを従来比20%下
げることができる。しかも生産に必要とされる付
帯設備コスト及びエツチング法の省電力化により
ランニングコストの低減も図ることができる。
[Table] As shown in Table 4, by using the etching method of the present invention, even if the dissolution loss is increased, the capacity can be increased proportionally without becoming saturated, and at the same time, the strength can be maintained. It became possible to do so. (See Example 4 in Figures 1 and 2) Effects of the Invention As described above, compared to the case where the electrode foil for aluminum electrolytic capacitors is etched by the method of the present invention,
It is possible to increase the capacitance value by 8 to 25%, making it possible to downsize aluminum electrolytic capacitors, and at the same time, when used as a capacitor product, tan δ can be lowered by 20% compared to conventional products. Furthermore, running costs can be reduced by reducing the cost of incidental equipment required for production and the power consumption of the etching method.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は実施例1〜4に掲げた各エツチング法
による溶解減量と静電容量との関係を示す特性
図、第2図は同じく実施例1〜4で掲げた各エツ
チング法による溶解減量とエツチング箔強度比と
の関係を示す特性図、第3図は本発明による化学
エツチング温度・減量と静電容量との関係を示す
特性との関係を示す特性図、第4図は従来法(実
施例2)と本発明によるエツチング法(実施例
4)のエツチング法によるエツチングピツト径と
ピツト数との関係を示す特性図である。
Figure 1 is a characteristic diagram showing the relationship between dissolution loss and capacitance by each etching method listed in Examples 1 to 4, and Figure 2 is a characteristic diagram showing the relationship between dissolution loss and capacitance by each etching method listed in Examples 1 to 4. FIG. 3 is a characteristic diagram showing the relationship between the etching foil strength ratio, FIG. FIG. 4 is a characteristic diagram showing the relationship between the etching pit diameter and the number of pits in the etching method of Example 2) and the etching method of the present invention (Example 4).

Claims (1)

【特許請求の範囲】[Claims] 1 塩酸水溶液、もしくはその水溶液に蓚酸、硫
酸、リン酸、硼酸またはそれらの塩のうち少なく
とも一つの皮膜形成性物質を添加したエツチング
液中で直流電流を通電してエツチングを行う第1
段エツチング工程と、アルミニウムよりイオン化
傾向の大きい金属の塩化物、もしくは塩化アンモ
ニウムからなるエツチング液中で直流電流を通電
してエツチングを行う第2段エツチング工程とを
有し、更に第3段エツチングとして塩酸水溶液、
もしくはその水溶液に蓚酸、硫残、リン酸、硼酸
またはそれらの塩のうち少なくとも一つの皮膜形
成性物質を添加した溶液、あるいは硝酸水溶液を
エツチング液として使用して化学エツチングを行
うことを特徴とするアルミ電解コンデンサ用電極
箔の製造方法。
1. A first step in which etching is carried out by applying a direct current in an aqueous hydrochloric acid solution or an etching solution in which at least one film-forming substance selected from oxalic acid, sulfuric acid, phosphoric acid, boric acid, or a salt thereof is added to the aqueous solution.
It has a step etching step, a second step etching step in which etching is carried out by passing a direct current in an etching solution made of metal chloride or ammonium chloride, which has a greater tendency to ionize than aluminum, and a third step etching step. Hydrochloric acid aqueous solution,
Alternatively, chemical etching is performed using a solution obtained by adding at least one film-forming substance selected from oxalic acid, sulfur residue, phosphoric acid, boric acid, or their salts to the aqueous solution, or an aqueous nitric acid solution as an etching liquid. A method for manufacturing electrode foil for aluminum electrolytic capacitors.
JP59024805A 1984-02-13 1984-02-13 Method of producing electrode foil for aluminum electrolytic condenser Granted JPS60169130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024805A JPS60169130A (en) 1984-02-13 1984-02-13 Method of producing electrode foil for aluminum electrolytic condenser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024805A JPS60169130A (en) 1984-02-13 1984-02-13 Method of producing electrode foil for aluminum electrolytic condenser

Publications (2)

Publication Number Publication Date
JPS60169130A JPS60169130A (en) 1985-09-02
JPH025009B2 true JPH025009B2 (en) 1990-01-31

Family

ID=12148404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024805A Granted JPS60169130A (en) 1984-02-13 1984-02-13 Method of producing electrode foil for aluminum electrolytic condenser

Country Status (1)

Country Link
JP (1) JPS60169130A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4556461B2 (en) * 2004-03-22 2010-10-06 パナソニック株式会社 Manufacturing method of etching foil for aluminum electrolytic capacitor
JP5170163B2 (en) * 2010-06-07 2013-03-27 パナソニック株式会社 Manufacturing method of etching foil for aluminum electrolytic capacitor

Also Published As

Publication number Publication date
JPS60169130A (en) 1985-09-02

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