JPH0250580B2 - - Google Patents
Info
- Publication number
- JPH0250580B2 JPH0250580B2 JP56187888A JP18788881A JPH0250580B2 JP H0250580 B2 JPH0250580 B2 JP H0250580B2 JP 56187888 A JP56187888 A JP 56187888A JP 18788881 A JP18788881 A JP 18788881A JP H0250580 B2 JPH0250580 B2 JP H0250580B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- sealing part
- frit
- frit sealing
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/42—Measurement or testing during manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Description
【発明の詳細な説明】
本発明は、内部に気泡を生じたり、表面汚染が
残留したりして、絶縁欠陥が比較的生じ易いフリ
ツト封着部に基因する陰極線管の、内装導電膜と
外表面間の絶縁欠陥を簡単かつ確実に検出する方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention aims to improve the internal conductive film and the external conductive film of cathode ray tubes, which are caused by the frit sealing part which is relatively prone to insulation defects due to the formation of air bubbles inside or residual surface contamination. This invention relates to a method for easily and reliably detecting insulation defects between surfaces.
陰極線管とくに螢光面形成のための大きなマス
クをかけて露光する工程のあるカラー管は、バル
プのパネル内面への螢光面形成工程を終了したパ
ネルをフアンネルの大径開口端にフリツト(低融
点ガラス粉末)を用いて封着しなければならな
い。フリツト封着部は、内部に気泡が生じたり、
パネルやフアンネルの端面に汚染が残留していた
り、フリツトをペーストにして塗布する工程で汚
染物質が混入したりするので、陰極線管実用時
に、陰極線管バルブのガラス壁の内、外表面間
に、陰極線を高速に加速する直流高電圧を印加す
ると、このフリツト封着部が電気絶縁上の弱点と
なつて、ここの絶縁が破壊されたり、ここを通じ
てかなりの電流が流れたりする不良が比較的高率
に発生する。そのため従来から、第1図に示すよ
うに、フアンネルガラス壁2を貫通し管内壁面上
の内装導電膜4に導通する陽極端子3に、コンタ
クト電極5を接触させ、スイツチ8を介して直流
高圧電源7の陽極を接続し、一方フリツト封着部
1の外周に電流検出電極6を密着させ、フリツト
封着部を通つて流れる電流ifの値を電流検出器6
aで測定し、フリツト封着部の絶縁検査を行なつ
ていた。しかし、第1図に示すような検査法で
は、フアンネルガラス壁2の外表面が汚染してい
ると、この外表面上を直接コンタクト5から検出
電極6へ流れる比較的大きい漏洩電流ilが混入す
るほか、慣性モーメントの大きい可動コイル形検
流計などを用いると電圧印加直後の充電電流波形
や、フリツト封着部の絶縁欠陥による前記電流波
形の乱れなども測定できず、製品のフリツト封着
部絶縁欠陥の有無を的確に判別し難いという問題
があつた。 Cathode ray tubes, especially color tubes that require a process of exposure using a large mask to form a fluorescent surface, are manufactured by flitting the panel (which has undergone the process of forming a fluorescent surface onto the inner surface of the bulb panel) into the large-diameter opening end of the funnel. (melting point glass powder) must be used for sealing. Air bubbles may form inside the frit sealing part.
Contaminants may remain on the end faces of panels and funnels, and contaminants may be mixed in during the process of applying the frit as a paste. When a high DC voltage that accelerates cathode rays is applied, this frit seal becomes a weak point in the electrical insulation, resulting in a relatively high number of defects where the insulation is broken or a considerable amount of current flows through it. occurs at a certain rate. For this reason, conventionally, as shown in FIG. The anode of the power source 7 is connected, while the current detection electrode 6 is closely attached to the outer periphery of the frit sealing part 1, and the value of the current i f flowing through the frit sealing part is detected by the current detector 6.
The insulation of the frit-sealed part was tested by measuring the temperature at a. However, in the inspection method shown in FIG. 1, if the outer surface of the funnel glass wall 2 is contaminated, a relatively large leakage current i l flows directly from the contact 5 to the detection electrode 6 on this outer surface. In addition to contamination, if a moving coil type galvanometer with a large moment of inertia is used, it will not be possible to measure the charging current waveform immediately after voltage application, or any disturbances in the current waveform due to insulation defects in the frit sealing area, which may cause problems with the frit sealing of the product. There was a problem in that it was difficult to accurately determine whether there was an insulation defect in the bonded area.
本発明の目的は上記の如き問題のない、フリツ
ト封着部の絶縁欠陥の有無を簡単かつ確実に検出
できる方法を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for simply and reliably detecting the presence or absence of an insulation defect in a frit sealing portion without the above-mentioned problems.
上記目的を達成するために本発明においては、
陰極線管の、内装導電膜とフリツト封着部外周に
密着した電極との間に、高電圧パルスを繰返し印
加し、電圧印加に対応して流れた電流波形を繰返
し測定した値の蓄積結果を解析して、フリツト封
着部絶縁欠陥を検出するようにした。これは本発
明者が電子式計測装置を用いてフリツト封着部に
電圧を印加した直後からの電流波形を観測したと
ころ、フリツト封着部に欠陥がある場合は、導電
膜を電極とする容量への充電電流のピークが高く
なり、更にそのピークから指数関数的に低下して
行く過程でも、指数関数的経過が乱れて過渡的突
出部が生ずる場合のあることがわかり、しかもこ
の当初のピークからの低下過程で観測された不規
則な変動による小ピークは、電圧印加直後に現れ
る確率が高く、高電圧を比較的長く継続して印加
するよりも、高電圧パルスを繰返し印加する方が
顕著に観測されたからである。絶縁欠陥検出装置
を電子式にして高速観測を可能にすると共に、観
測結果をデイジタル変換して、繰返し観測値の蓄
積や、解析のための演算を容易に施せるようにし
た。なお精密な正しい観測結果が得られるよう
に、陰極線管の外表面上の漏洩電流がフリツト封
着部絶縁電流に混入するのを防止するガード電極
も用いることとした。 In order to achieve the above object, in the present invention,
A high voltage pulse is repeatedly applied between the internal conductive film of a cathode ray tube and an electrode that is in close contact with the outer periphery of the frit seal, and the accumulated values of the current waveform that flows in response to the applied voltage are repeatedly measured and analyzed. In this way, insulation defects in the frit sealing part are detected. When the present inventor observed the current waveform immediately after applying voltage to the frit sealing part using an electronic measuring device, it was found that if there is a defect in the frit sealing part, the capacitance using the conductive film as an electrode It has been found that even in the process where the peak of the charging current becomes high and then decreases exponentially from that peak, the exponential process may be disrupted and a transient protrusion may occur, and furthermore, this initial peak The small peaks due to irregular fluctuations observed in the process of lowering the voltage are more likely to appear immediately after voltage application, and are more noticeable when high voltage pulses are repeatedly applied than when high voltage is applied continuously for a relatively long time. This is because it was observed in The insulation defect detection device was made electronic to enable high-speed observation, and the observation results were converted into digital data, making it easy to accumulate repeated observation values and perform calculations for analysis. In order to obtain accurate and accurate observation results, we also used a guard electrode to prevent leakage current on the outer surface of the cathode ray tube from mixing with the insulation current of the frit seal.
まず第2図によつて、測定対象となるフリツト
封着部や、誤差の原因となる漏洩電流径路などを
含む従来の(本発明の場合も基本的には同じ)検
出回路の大要を説明する。図からわかるように、
コンタクト電極5と電流検出電極6の間の電流は
フリツト封着部1を流れるif管外表面(実効抵抗
rs)を流れる漏洩電流ilよりなる。ifの径路中には
容量Cfを有する内装導電膜4が含まれる。ilとif
との分離は前記の如く古くから公知のガード電極
を用いることによつて容易に行なえるが、フリツ
ト封着部の絶縁特性には従来必ずしも明らかでな
い点があつて良否の判別を量産工程で的確に行う
のは容易でなかつたのである。ifの径路には容量
Cfが存在するから下記(1)、(2)、(3)式が成立する。
ただし、tは時刻、qはCfに蓄積する電荷、rfは
フリツト溶着部1の抵抗である。 First, with reference to Fig. 2, we will explain the outline of the conventional detection circuit (which is basically the same in the case of the present invention), including the frit sealing part that is the object of measurement and the leakage current path that causes errors. do. As you can see from the figure,
The current between the contact electrode 5 and the current detection electrode 6 flows through the frit sealing part 1.
The leakage current i l flows through r s ). The internal conductive film 4 having a capacitance C f is included in the path of i f . i l and i f
Separation from the frit can be easily achieved by using the long-known guard electrode as described above, but there are some points in the insulation properties of the frit sealing part that are not always clear, and it is difficult to accurately determine whether the frit is good or bad in the mass production process. It was not easy to do so. The path of i f has a capacity
Since C f exists, the following equations (1), (2), and (3) hold true.
Here, t is time, q is the charge accumulated in C f , and r f is the resistance of the frit welded portion 1 .
E0=rfdq/dt+q/Cf (1)
q(t)=Cf・E0(1−e-t/rfCf) (2)
if(t)=dq/dt=E0/rfe-t/rfCf (3)
電圧印加時(t=0)のif値if1は
if1=E0/rf (5)
また時定数t1=rfCf経過後のifの値if2は
if2=E0/e・rf (6)
となる。これらの式中rfとCfは定数とみなした
が、実際にはフリツト封着部1に絶縁欠陥がある
場合はrfは不規則に変動、低下し、Cfは大き目に
なる。従来は慣性モーメントの大きい可動線輪形
検流計6aを用いてたので電流波形の観測は困難
であつた。なお検流計を流れる全電流I0の値は勿
論I0=if+ilである。 E 0 = r f dq/dt+q/C f (1) q(t)=C f・E 0 (1-e -t/rfCf ) (2) i f (t)=dq/dt=E 0 /r f e -t/rfCf (3) The i f value i f1 when voltage is applied (t = 0) is i f1 = E 0 / r f (5) Also, the time constant t 1 = r f C f after elapse of i f The value i f2 is i f2 =E 0 /e·r f (6). In these equations, r f and C f are assumed to be constants, but in reality, if there is an insulation defect in the frit sealing portion 1, r f fluctuates and decreases irregularly, and C f becomes large. Conventionally, a movable ring galvanometer 6a with a large moment of inertia was used, making it difficult to observe the current waveform. Note that the value of the total current I 0 flowing through the galvanometer is, of course, I 0 = if + i l .
第3図は本発明一実施例のブロツク図である。
処理装置18からパルス信号20が与えられる
と、それに応じてスイツチ8が作動し、測定回路
に電圧値E0の高圧パルスが繰返し、例えば20m
sオン、20msオフで、合計10s印加される。測
定対象電流値は微小であるから、まずレベル変換
回路14により適正レベルに変換し、電流抽出回
路15に入力する。電流抽出回路は処理装置か
ら、電圧印加後まもなくif1抽出信号(パルス)9
aを与えられると信号期間中の電流のピーク値
を、電圧を印加してから時定数t1経過後if2抽出信
号9bを与えられるとその期間中の電流のピーク
値を、更に時間が経過してe-t/t1が十分小さくな
つた時点tでil抽出信号9cが与えられるとその
期間中の電流のピーク値を、抽出する。この実施
例では電極6に流入する電流はI0=if+ilで、のう
ちifは既述の如く、フリツト封着部が正常ならば
指数関数的に経時変化して低下し、封着部に絶縁
欠陥があれば不規則に変動して正堂時よりも大き
くなる。この様子を第4図に示す。E0と示す線
は電圧印加状態を示し(20と示す期間スイツチ8
が閉じて高圧パルスE0(例えば常時陽極電圧28kv
の管に対し35kv程度)が繰返し印加される。つ
ぎのI0と示す線はI0=if+ilを示し、10aはフリ
ツト封着部に欠陥のない場合の例を示す。次のif1
と示した線は前記抽出信号9aによつて抽出回路
15が抽出した、信号9aの期間中のI0のピーク
値11a等を示し、ifと冠してはいるがIlを含む。
次のif2と示す線は時定数t1=rf・Cf経過後のI0の
ピーク値(前記パルス状のif2抽出信号9bの期間
中最大値)12a等を示し、Ilを含んでいる。次
のilと示す線はIl抽出信号9cが与えられた時のI0
の抽出値13a等を示し、Ilと冠するが非常に減
少したifも含んでいる。フリツト封着部に欠陥が
あるとI0、if1、if2、il等はそれぞれ、10b,1
1b,12b,13b等で示すようになる。すな
わち指数関数的にI0が低下する過程で不規則な乱
れ、小ピークが現われることがある。しかもこの
様な小ピークは電圧印加後間もない時に現われる
ことが多い。これが高圧パルスを繰返し印加する
方が、同じ高圧をただ継続的に印加するよりも、
欠陥検出が容易となる理由である。なお第4図で
は便宜上第1回目の電圧印加時には封着部が正常
な場合の電流を、第2回目に封着部に欠陥がある
場合を示したが、封着部に欠陥がある場合の電流
は第1回目の高圧パルス印加時から10bで示す
様になるのが一般的である。なお欠陥のある場合
は、たとい低下中に小ピークが現れなくても最初
のピークすなわち11bは正常時の11aより高
くなるのが一般的である。さて第3図に戻り、上
記のように抽出回路15で抽出された電流値は
A/D変換器16でデイジタル化されメモリ17
に蓄積され、処理置18による解析、演算に用い
られる。演算結果は表示器19に表示される。封
着部が正常なものと、欠陥のあるものの判別は、
If1、If2の値を、既に多数のデータの蓄積されて
いる正常値と比較すればよい。rfやCfの値につい
ても勿論計算でき、正常、異常の別、異常原因推
定もできる。なお表画漏洩電流を分離するには、
前記第4図について述べたIl値を、直接測定した
I0値から差引いてIfを算出してもよいが、第5図
に示す様に、コンタクト電極5の周囲にガード電
極21を設けてもよく、こうした方がメモリ容量
が小さくてすみ、処理時間も一般に短縮される。 FIG. 3 is a block diagram of one embodiment of the present invention.
When a pulse signal 20 is given from the processing device 18, the switch 8 is actuated accordingly, and a high voltage pulse with a voltage value E0 is repeatedly applied to the measuring circuit, for example, 20 m.
A total of 10 seconds is applied, with s on and 20ms off. Since the current value to be measured is minute, it is first converted to an appropriate level by the level conversion circuit 14 and input to the current extraction circuit 15. The current extraction circuit receives an i f1 extraction signal (pulse) 9 from the processing device shortly after voltage application.
When a is given, the peak value of the current during the signal period is determined, and after the time constant t 1 has elapsed since the voltage is applied, i f2 When the extraction signal 9b is given, the peak value of the current during that period is determined. When the i l extraction signal 9c is applied at a time point t when e -t/t1 becomes sufficiently small, the peak value of the current during that period is extracted. In this embodiment, the current flowing into the electrode 6 is I 0 = i f + i l , of which i f changes exponentially with time and decreases as described above if the frit sealing part is normal. If there is an insulation defect in the attachment part, it will fluctuate irregularly and become larger than in the main hall. This situation is shown in FIG. The line marked E 0 indicates the voltage application state (period switch 8 marked 20).
is closed and high voltage pulse E 0 (e.g. constant anode voltage 28kv
(approximately 35 kV) is repeatedly applied to the pipe. The next line labeled I 0 indicates I 0 = if + i l , and 10a shows an example where there is no defect in the frit sealing portion. next i f1
The line shown indicates the peak value 11a of I 0 during the period of the signal 9a extracted by the extraction circuit 15 using the extraction signal 9a, and includes I l although it is prefixed with if .
The next line labeled i f2 indicates the peak value of I 0 (the maximum value during the period of the pulsed i f2 extraction signal 9b) 12a after the time constant t 1 = r f・C f has elapsed, and I l Contains. The next line marked i l is I 0 when the I l extraction signal 9c is given.
It shows the extracted value 13a of , etc., and also includes i f which is labeled I l but has been greatly reduced. If there is a defect in the frit sealing part, I 0 , i f1 , i f2 , i l etc. become 10b, 1, respectively.
1b, 12b, 13b, etc. That is, irregular disturbances and small peaks may appear in the process of exponentially decreasing I 0 . Furthermore, such small peaks often appear shortly after voltage application. This means that applying high voltage pulses repeatedly is better than simply applying the same high voltage continuously.
This is the reason why defects can be easily detected. For convenience, in Figure 4, the first voltage application shows the current when the sealed part is normal, and the second time shows the current when there is a defect in the sealed part. Generally, the current becomes as shown by 10b from the first application of the high voltage pulse. Note that in the case of a defect, the first peak, ie, 11b, is generally higher than 11a in the normal state, even if no small peak appears during the drop. Now, returning to FIG. 3, the current value extracted by the extraction circuit 15 as described above is digitized by the A/D converter 16 and digitized by the memory 17.
and used for analysis and calculation by the processing device 18. The calculation results are displayed on the display 19. Distinguishing between those with normal sealing parts and those with defects is as follows:
The values of I f1 and I f2 may be compared with normal values for which a large amount of data has already been accumulated. Of course, the values of r f and C f can also be calculated, and it is also possible to distinguish between normal and abnormal conditions and estimate the cause of the abnormality. In addition, to separate the surface leakage current,
The I l value mentioned in Figure 4 above was measured directly.
Although I f may be calculated by subtracting it from the I 0 value, it is also possible to provide a guard electrode 21 around the contact electrode 5 as shown in FIG. Time is also generally reduced.
以上説明したように本発明によれば、陰極線管
フリツト封着部の絶縁欠陥を簡単かつ確実に検出
できる。 As described above, according to the present invention, insulation defects in the cathode ray tube frit sealing portion can be easily and reliably detected.
第1図は従来の検出法の説明図、第2図は検出
回路概要説明図、第3図は本発明一実施例のブロ
ツク図、第4図は前記実施例の抽出電流説明図、
第5図はガード電極説明図である。
1……フリツト封着部、2……フアンネルガラ
ス壁、3……陽極端子、4……内装導電膜、9a
……If1抽出信号、9b……if2抽出信号、10a,
10b……I0波形、11a,11b……if1抽出
値、12a,12b……if2抽出値、14……レベ
ル変換回路、15……電流抽出回路、16……
A/D変換器、17……メモリ、18……処理装
置、19……表示器、21……ガード電極、if…
…フリツト封着部流通電流、il……表面漏洩電流、
E0……直流高電圧、rf……フリツト封着部抵抗、
Cf……if径路中の容量。
FIG. 1 is an explanatory diagram of the conventional detection method, FIG. 2 is an explanatory diagram of a detection circuit outline, FIG. 3 is a block diagram of an embodiment of the present invention, and FIG. 4 is an explanatory diagram of extracted current of the embodiment.
FIG. 5 is an explanatory diagram of the guard electrode. DESCRIPTION OF SYMBOLS 1...Fritt sealing part, 2...Funnel glass wall, 3...Anode terminal, 4...Interior conductive film, 9a
...I f1 extracted signal, 9b...i f2 extracted signal, 10a,
10b... I0 waveform, 11a, 11b...i f1 extracted value, 12a, 12b...i f2 extracted value, 14...Level conversion circuit, 15...Current extraction circuit, 16...
A/D converter, 17...memory, 18...processing device, 19...display device, 21...guard electrode, i f ...
...Fritt sealing part current, i l ...Surface leakage current,
E 0 ...DC high voltage, r f ...Fritt sealing part resistance,
C f ……i Capacity in the f path.
Claims (1)
周に密着した電極との間に、高電圧パルスを繰返
し印加し、電圧印加に対応して流れた電流波形を
繰り返し測定した値の蓄積結果を解析して、フリ
ツト封着部絶縁欠陥を検出するようにしたことを
特徴とする陰極線管フリツト封着部の絶縁欠陥検
出法。1 High voltage pulses are repeatedly applied between the internal conductive film of the cathode ray tube and the electrodes that are in close contact with the outer periphery of the frit sealing part, and the accumulated values of the current waveforms that flow in response to the applied voltage are measured repeatedly. 1. A method for detecting insulation defects in a cathode ray tube frit sealing part, characterized in that insulation defects in a frit sealing part are detected by analysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56187888A JPS5889760A (en) | 1981-11-25 | 1981-11-25 | Insulation defect detecting method at frit sealing section of cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56187888A JPS5889760A (en) | 1981-11-25 | 1981-11-25 | Insulation defect detecting method at frit sealing section of cathode ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5889760A JPS5889760A (en) | 1983-05-28 |
| JPH0250580B2 true JPH0250580B2 (en) | 1990-11-02 |
Family
ID=16213942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56187888A Granted JPS5889760A (en) | 1981-11-25 | 1981-11-25 | Insulation defect detecting method at frit sealing section of cathode ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5889760A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590070U (en) * | 1992-05-21 | 1993-12-07 | 東京焼結金属株式会社 | Solenoid valve device |
-
1981
- 1981-11-25 JP JP56187888A patent/JPS5889760A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590070U (en) * | 1992-05-21 | 1993-12-07 | 東京焼結金属株式会社 | Solenoid valve device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5889760A (en) | 1983-05-28 |
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