JPH0250645B2 - - Google Patents
Info
- Publication number
- JPH0250645B2 JPH0250645B2 JP12596284A JP12596284A JPH0250645B2 JP H0250645 B2 JPH0250645 B2 JP H0250645B2 JP 12596284 A JP12596284 A JP 12596284A JP 12596284 A JP12596284 A JP 12596284A JP H0250645 B2 JPH0250645 B2 JP H0250645B2
- Authority
- JP
- Japan
- Prior art keywords
- switch
- coil
- diode
- circuit
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000003321 amplification Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、チユーナのVHFとUHFとの切換等
に用いられる高周波増幅回路の切換装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a switching device for a high frequency amplifier circuit used for switching between VHF and UHF in a tuner.
従来例の構成とその問題点
最近では電界効果トランジスタ(以下FETと
略称する)を用いた高周波増幅器がよく利用され
るが、これをチユーナーのRF増幅器として使用
する場合、VHFとUHFの出力をそれぞれの受信
時に応じて切換える必要がある。Conventional configuration and its problems Recently, high frequency amplifiers using field effect transistors (hereinafter abbreviated as FET) are often used, but when using this as an RF amplifier for a tuner, VHF and UHF outputs are It is necessary to switch depending on the time of reception.
第1図に切換装置の従来例を示す。第1図にお
いて1はUHF用増幅トランジスタ、5はVHF用
増幅トランジスタ、2,6はそれぞれのスイツチ
ダイオード、3,7はそれぞれの負荷チヨーク、
4はVHF出力とUHF出力をつなぐ結合コンデン
サである。端子AからはUHF受信時に電源電圧
が供給され、VHF受信時には数KΩの抵抗で接
地されてダイオード2をオフさせる。端子Bは
VHF受信時の電源供給端子で端子Aと同様な動
作を行なう。端子Cは共通のRF出力端子で次段
のミキサー等に結合される。一般的にはダイオー
ド1と2及びトランジスタ5と6は集積回路内に
収められ、チヨーク3,7および結合コンデンサ
4は外部で構成される。 FIG. 1 shows a conventional example of a switching device. In Figure 1, 1 is a UHF amplification transistor, 5 is a VHF amplification transistor, 2 and 6 are respective switch diodes, 3 and 7 are respective load chains,
4 is a coupling capacitor that connects the VHF output and UHF output. Power supply voltage is supplied from terminal A when receiving UHF, and when receiving VHF it is grounded through a resistor of several kilohms to turn off diode 2. Terminal B is
This is the power supply terminal when receiving VHF and performs the same operation as terminal A. Terminal C is a common RF output terminal and is coupled to the next stage mixer, etc. Generally, the diodes 1 and 2 and the transistors 5 and 6 are contained within the integrated circuit, while the diodes 3, 7 and the coupling capacitor 4 are constructed externally.
以上のような構成の増幅器においては、VHF
及びUHFが広帯域増幅でチヨーク負荷の場合の
み可能である。しかるに、広帯域の場合にはゲイ
ンが低く、特にUHFの場合には同調増幅器のよ
うにゲインをとることは困難である。 In the amplifier configured as above, VHF
and UHF is only possible with wideband amplification and high load. However, in the case of a wide band, the gain is low, and in the case of UHF in particular, it is difficult to obtain a gain like a tuned amplifier.
そこで、第2図に示すごとく、UHF帯のセン
ター付近に若干の同調特性をもたすような負荷回
路3及び8を構成したい場合がある。その場合、
第1図のダイオード2の位置ではVHF受信時に
コイル3とコンデンサ8による同調回路の影響を
受けるので、例えば第2図中に示したダイオード
2と抵抗9によるスイツチ回路が考えられる。 Therefore, as shown in FIG. 2, there are cases where it is desired to configure the load circuits 3 and 8 so as to have a slight tuning characteristic near the center of the UHF band. In that case,
Since the position of diode 2 in FIG. 1 is affected by the tuning circuit consisting of coil 3 and capacitor 8 during VHF reception, a switch circuit consisting of diode 2 and resistor 9 shown in FIG. 2, for example, can be considered.
この場合はUHFとVHF間の結合は避けられる
が、スイツチ電流が必要となり、特に導通時のロ
スを減らす為にはトランジスタに流すのと同程度
の電流が必要である。又トランジスタの出力イン
ピーダンスが高い場合には、スイツチ回路を挿入
することによるリードや箔による分布容量の為に
UHF帯においてはロスを生じやすいという欠点
がある。 In this case, coupling between UHF and VHF can be avoided, but a switch current is required, and in particular to reduce loss during conduction, a current comparable to that flowing through the transistor is required. In addition, if the output impedance of the transistor is high, the distributed capacitance due to the leads and foil caused by inserting a switch circuit
In the UHF band, there is a drawback that loss is likely to occur.
発明の目的
本発明は、上記従来の問題点を解消するもの
で、同調負荷時にも互いの影響を受けず、且つロ
スの少ない切換装置を提供することを目的とす
る。OBJECTS OF THE INVENTION The present invention solves the above-mentioned conventional problems, and aims to provide a switching device that is not affected by each other even during a tuned load and has less loss.
発明の構成
本発明による切換装置は、2つの高周波増幅回
路の少なくとも一方のトランジスタの出力端に挿
入された同調回路を構成するコイルと負荷チヨー
クの間に一方のスイツチダイオードを挿入するよ
うにしたものであり、互いの影響を受けることな
く、それぞれの信号を取り出すことができる。Structure of the Invention A switching device according to the present invention is such that one switch diode is inserted between a load chain and a coil constituting a tuning circuit inserted at the output terminal of at least one transistor of two high-frequency amplifier circuits. Therefore, each signal can be extracted without being influenced by each other.
実施例の説明 以下本発明の実施例について説明する。Description of examples Examples of the present invention will be described below.
第3図は本発明の一実施例における高周波増幅
器切換装置の回路図を示すものである。 FIG. 3 shows a circuit diagram of a high frequency amplifier switching device in an embodiment of the present invention.
図において11はUHF増幅用FET、18は
VHF増幅用FET、12及び19はそれぞれの切
換用ダイオード、14は同調用コイル、15は同
調用コンデンサ、16はDCカツトコンデンサ、
13はUHF用チヨークコイル、20はVHF用の
チヨークコイル、17は結合コンデンサである。 In the figure, 11 is a UHF amplification FET, and 18 is
VHF amplification FET, 12 and 19 are respective switching diodes, 14 is a tuning coil, 15 is a tuning capacitor, 16 is a DC cut capacitor,
Reference numeral 13 designates a UHF chiyoke coil, 20 a VHF chiyoke coil, and 17 a coupling capacitor.
以上のように構成された切換装置について以下
その動作を説明する。第3図において、UHF増
幅部の出力側負荷にはUHF帯のセンター付近に
同調特性をもたす為の回路14及び15とチヨー
ク13が接続されているが、同調コイル14の中
間タツプ点とチヨーク13の間に一方のスイツチ
ダイオード12が接続されている。従つて、
UHF受信時にはスイツチダイオード12が導通
して、コイル14とコンデンサ15からなる同調
回路の特性が結合コンデンサ17を介して出力端
子Cに現れる。 The operation of the switching device configured as described above will be explained below. In FIG. 3, circuits 14 and 15 and a chain 13 are connected to the output side load of the UHF amplifier section to provide a tuning characteristic near the center of the UHF band. One switch diode 12 is connected between the switch yokes 13. Therefore,
During UHF reception, the switch diode 12 becomes conductive, and the characteristics of the tuned circuit consisting of the coil 14 and capacitor 15 appear at the output terminal C via the coupling capacitor 17.
この時、スイツチダイオード19はオフしてい
るのでトランジスタ18の影響は受けない。 At this time, the switch diode 19 is off, so the transistor 18 is not affected.
又、VHF受信時にはダイオード12はオフし、
同調回路は切離され、特性に対し影響のないチヨ
ーク13だけが負荷として接続されるのでVHF
受信時にもUHF回路の影響は受けないことにな
る。 Also, when receiving VHF, diode 12 is turned off,
The tuning circuit is disconnected and only the chain 13, which has no effect on the characteristics, is connected as a load, so VHF
This means that the signal will not be affected by the UHF circuit during reception.
さらに、負荷コイル14はタツプダウンしてス
イツチダイオードに接続しているので、スイツチ
ダイオード以降のインピーダンスは低く、引回し
によるロスは大幅に軽減される。 Furthermore, since the load coil 14 is tapped down and connected to the switch diode, the impedance after the switch diode is low, and losses due to routing are greatly reduced.
なお本実施例においてはUHF部のみ同調回路
を設けているが、VHF部にも同調回路を設けて
もUHF部と同様の回路で構成できる。 In this embodiment, only the UHF section is provided with a tuning circuit, but the VHF section may also be provided with a tuning circuit and configured with the same circuit as the UHF section.
第4図は本回路を集積回路化した場合の構成図
で、斜線枠内が内蔵部分である。第4図bが第3
図の実施例で、aはVHF部にも同調回路を設け
た場合である。 FIG. 4 is a configuration diagram when this circuit is integrated, and the inside of the diagonal frame is the built-in part. Figure 4b is the third
In the illustrated embodiment, a shows a case in which a tuning circuit is also provided in the VHF section.
発明の効果
以上のように本発明によれば、2つの高周波増
幅器の出力を共通にして1つの出力で取り出す場
合に、同調回路と負荷チヨークの間にスイツチダ
イオードを挿入したことにより、2つの増幅回路
の互いの影響なくそれぞれの出力を取出すことが
できる。Effects of the Invention As described above, according to the present invention, when the outputs of two high-frequency amplifiers are shared and taken out as one output, by inserting a switch diode between the tuning circuit and the load chain, the two amplification The outputs of each circuit can be taken out without affecting each other.
又、増幅トランジスタの電源電流とスイツチ電
流を兼用しているので、スイツチダイオードの電
流分を節約できる。 Furthermore, since the power supply current of the amplifying transistor and the switch current are shared, the current of the switch diode can be saved.
さらに、タツプダウン負荷により、低インピー
ダンスで切換回路が実現できるのでロスが低減
し、又逆に同調回路のインピーダンスが上がるの
で、例えば同調回路のコンデンサCをバリキヤツ
プにして可変同調回路を構成してもQの高い同調
特性が得られる。 Furthermore, the tap-down load allows a switching circuit to be realized with low impedance, reducing loss, and conversely increasing the impedance of the tuning circuit. High tuning characteristics can be obtained.
なお、以上の回路のうちトランジスタ及びスイ
ツチダイオードをICに内蔵することにより、安
価に且つ実装距離を最短にでき、さらにロスを低
減できる。又、トランジスタの出力端子とスイツ
チダイオードのカソード端子を別々に設けること
により同調回路を任意に選ぶことができる。 Note that by incorporating the transistors and switch diodes in the above circuit into the IC, it is possible to reduce the cost, minimize the mounting distance, and further reduce loss. Furthermore, by separately providing the output terminal of the transistor and the cathode terminal of the switch diode, the tuning circuit can be arbitrarily selected.
第1図は2つの高周波増幅器を切換える従来例
の切換装置の回路図、第2図は高周波増幅器の出
力が同調負荷である場合の従来例の切換装置の回
路図、第3図は本発明の一実施例における高周波
回路切換装置の回路図、第4図a,bは同装置を
集積回路化した場合の構成を示す図である。
11,18……高周波増幅用トランジスタ、1
2,19……スイツチダイオード、14……同調
コイル、13,20……負荷チヨークコイル。
Fig. 1 is a circuit diagram of a conventional switching device that switches between two high-frequency amplifiers, Fig. 2 is a circuit diagram of a conventional switching device when the output of the high-frequency amplifier is a tuned load, and Fig. 3 is a circuit diagram of a conventional switching device for switching between two high-frequency amplifiers. FIGS. 4a and 4b, which are circuit diagrams of a high-frequency circuit switching device according to an embodiment, are diagrams showing the configuration when the same device is integrated into an integrated circuit. 11, 18...High frequency amplification transistor, 1
2, 19... Switch diode, 14... Tuning coil, 13, 20... Load chain coil.
Claims (1)
ンジスタの出力にコイルの一端を接続し、上記コ
イルの他端を交流的に接地し、上記コイルの任意
のタツプ位置とスイツチダイオードのカソードを
接続し、上記ダイオードのアノードと上記トラン
ジスタの電源供給端子間に第1のチヨークコイル
を接続し、上記ダイオードのアノードを結合コン
デンサを介して他方のトランジスタに接続するス
イツチダイオードのアノードと第2のチヨークコ
イルの交点に接続してなる高周波回路切換装置。 2 高周波増幅用トランジスタとスイツチダイオ
ードを集積回路内に内蔵し、少なくとも一方のト
ランジスタの出力端子とスイツチダイオードのカ
ソード端子を別々に外部に引出すことを特徴とす
る特許請求の範囲第1項記載の高周波回路切換装
置。[Claims] 1. One end of the coil is connected to the output of at least one transistor of two high-frequency amplifiers, the other end of the coil is grounded in an alternating current manner, and any tap position of the coil and the cathode of the switch diode are connected. A first switch coil is connected between the anode of the diode and the power supply terminal of the transistor, and the anode of the switch diode and the second switch coil are connected to each other, and the anode of the diode is connected to the other transistor via a coupling capacitor. A high frequency circuit switching device connected to the intersection of 2. The high frequency amplifier according to claim 1, wherein a high frequency amplifying transistor and a switch diode are built into an integrated circuit, and the output terminal of at least one of the transistors and the cathode terminal of the switch diode are separately drawn out. Circuit switching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125962A JPS614308A (en) | 1984-06-19 | 1984-06-19 | Switching device of high frequency circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59125962A JPS614308A (en) | 1984-06-19 | 1984-06-19 | Switching device of high frequency circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS614308A JPS614308A (en) | 1986-01-10 |
| JPH0250645B2 true JPH0250645B2 (en) | 1990-11-05 |
Family
ID=14923284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59125962A Granted JPS614308A (en) | 1984-06-19 | 1984-06-19 | Switching device of high frequency circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS614308A (en) |
-
1984
- 1984-06-19 JP JP59125962A patent/JPS614308A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS614308A (en) | 1986-01-10 |
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