JPH0250985B2 - - Google Patents

Description

[Detailed description of the invention]

(Industrial Application Field) The present invention relates to a method and apparatus for forming a film on a substrate using an ultrafine particle beam. (Prior art) Conventional methods for forming films on substrates are mainly based on vacuum evaporation, which has a slow film formation rate, and to increase this speed, high-power equipment such as a high-voltage electron beam is required. . Furthermore, in order to effectively utilize the evaporated atoms, a large-capacity container is required, and the only way to control the film quality is to heat the substrate, making it difficult to control the film quality. (Problems to be Solved by the Invention) The present invention solves the disadvantages of these conventional film forming methods, such as slow film forming speed, need for high output equipment, and difficulty in controlling film quality. In order to achieve this goal, the present invention aims to provide a method and apparatus for forming a film quickly and with low output using ultrafine particles by evaporation in a gas, and controlling the quality of the film. (Means for solving the problem) The film forming method using an ultrafine particle beam of the present invention is as follows:
The film-forming substance is evaporated in a gas to generate ultrafine particles, the generated ultrafine particles are blown out through a nozzle into a vacuum container by the pressure difference, the ultrafine particle beam flying inside the vacuum container is heated, and then the film-forming substrate is heated. This is a film forming method in which a film is formed by adhering to the surface. It is preferable to evaporate the film-forming substance by heating. Furthermore, it is preferable that the ultrafine particle beam be heated by radiation heating while it is flying within the vacuum container. By adjusting the film formation conditions such as the heating temperature and heating time of the ultrafine particle beam while it is flying in the vacuum container, and the pressure difference when the ultrafine particles are blown out through the nozzle into the vacuum container, we can improve the crystal structure, density, and electrical properties of the film. It is convenient to control film properties such as resistance and adhesion to the substrate. A film forming apparatus using an ultrafine particle beam according to the present invention includes an ultrafine particle generation chamber, a film formation chamber communicating with the ultrafine particle generation chamber through a micropore nozzle, a heating section provided near the exit of the micropore nozzle, and , an ultrafine particle generation chamber, and a pressure difference generation device connected to each of the film formation chamber. It is desirable to provide a differential pressure chamber connected to a pressure differential generator between the ultrafine particle generation chamber and the film formation chamber. The pressure difference generator includes an ultrafine particle generation chamber, a differential pressure chamber,
Advantageously, it consists of an exhaust system connected to each of the film formation chambers and a gas supply system connected to the ultrafine particle generation chamber. Further, it is convenient to use a radiation heating device as the heating section. (Example) Hereinafter, a film forming method using an ultrafine particle beam of the present invention and an apparatus therefor will be explained in detail with reference to FIG. The film forming apparatus using an ultrafine particle beam of the present invention mainly consists of an ultrafine particle generation chamber 1, a differential pressure chamber 2 communicating with the ultrafine particle generation chamber 1 through a microhole nozzle 15, and a heating section 16 between the differential pressure chamber 2 and a heating section 16. The ultrafine particle generation chamber 1, the differential pressure chamber 2, and the film formation chamber 3 are connected to an exhaust system (described later) connected to the ultrafine particle generation chamber 1, the differential pressure chamber 2, and the film formation chamber 3, respectively. It consists of a pressure difference generating device consisting of a gas supply system (described later). It is desirable that the microhole nozzle 15 and the heating section 16 are aligned. In addition,
The differential pressure chamber 2 may be omitted and the heating section 16 may be provided near the outlet of the microhole nozzle 15. First, the inside of the ultrafine particle generation chamber 1, the differential pressure chamber 2, and the film formation chamber 3 are connected to the rotary pumps 4, 5, and 6, which are connected to the ultrafine particle generation chamber 1, and the film formation chamber 3, respectively. The vacuum is evacuated to about 5×10 ^-6 Torr using the connected oil diffusion pumps 7 and 8. After evacuation, the valve 9 connecting the ultrafine particle generation chamber 1 and the pumps 4 and 7 is closed, and the valve 10 between the generation chamber 1 and the gas cylinder 11 is opened.
Inert gas (argon or helium) is flowed into the generation chamber 1 from the gas cylinder 11. On this occasion,
The differential pressure chamber 2 and the film forming chamber 3 are evacuated by a mechanical booster pump 12, a rotary pump 5, an oil diffusion pump 8 and a rotary 6, respectively. A pressure difference is created between the two. At this time, the flow rate of the inert gas is adjusted by the valve 10 so that a predetermined pressure difference is achieved. When a predetermined pressure is reached, electricity is applied to a boat 13 made of high melting point metal such as tungsten or tantalum provided in the ultrafine particle generation chamber 1, and the metal lump 14 on the boat 13 is heated and evaporated to generate ultrafine particles A. do. At this time, the method of heating the metal lump 14 is not limited to the above-mentioned resistance heating method for high-melting point metals, but may also be heating using arc discharge, laser, electron beam, high frequency, or the like. The generated ultrafine particles A are concentrated and sucked into the microhole nozzle 15 due to the gas pressure difference, and are sucked into the differential pressure chamber 2.
and passes through a heating section 16 provided in the film forming chamber 3. At this time, the ultrafine particles become high in temperature due to radiation from the heating section 16. In the case of this embodiment, the heating section 16 is constructed by winding a tungsten wire around an alumina tube, and resistance heating is performed by applying electricity to the tungsten wire. Note that the heating section is not limited to resistance heating, and may be radiant heating such as infrared light. After passing through the heating section 16, the ultrafine particles B enter the film forming chamber 3.
It adheres to the substrate 17 attached to the substrate 17 to form a film. In this way, by sucking the ultrafine particles generated by the in-gas evaporation method into the microhole nozzle and concentrating them on the substrate, an excellent film formation rate can be obtained, and the length and thickness of the heating section 16 can be adjusted. By adjusting film formation conditions such as heating temperature, heating time, and pressure in ultrafine particle generation chamber 1, differential pressure chamber 2, and film formation chamber 3, the crystal structure, density, electrical resistance, degree of adhesion to the substrate, etc. of the film can be adjusted. The film quality can be controlled. The following table shows a comparison between the deposition rate of the film formed according to the present invention and the deposition rate of the vacuum evaporation method using a high-power electron beam, which is currently used industrially.

[Table] Further, FIG. 2 shows a scanning electron micrograph of a thin film made of ultrafine silver particles formed according to the present invention. A is a film that was heated during flight, and b is a film that was formed without heating for comparison.
Comparing these a and b, it can be seen that a dense film is formed due to heating during flight. (Effects of the Invention) As is clear from the description of the above embodiments, the film forming method and device using an ultrafine particle beam of the present invention can achieve excellent film formation speed and high quality using a simple structure and low output device. capable of forming a film, and
With simple operations, you can determine the crystal structure, density, electrical resistance,
Film quality such as degree of adhesion to the substrate can be controlled.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of the film forming apparatus of the present invention, and FIG. 2 is a scanning electron micrograph showing the metal structure of the thin film formed by ultrafine silver particles. 1: Ultrafine particle generation chamber, 2: Differential pressure chamber, 3: Film formation chamber, 4, 5, 6: Rotary pump, 7, 8: Oil diffusion pump, 9, 10, 18, 19: Valve, 1
1: Gas cylinder, 12: Mechanical booster pump, 13: Resistance heating boat, 14: Metal lump, 1
5: Microhole nozzle, 16: Heating section, 17: Substrate,
A: Generated ultrafine particles, B: Flow (beam) of ultrafine particles after being sucked into the nozzle.

Claims (1)

[Claims] 1. A film-forming substance is evaporated in a gas to generate ultrafine particles, and the generated ultrafine particles are blown out into a vacuum container through a nozzle due to a pressure difference, and the ultrafine particle beam flying inside the vacuum container is A film forming method using an ultrafine particle beam, which is characterized by heating and then adhering to a film forming substrate to form a film. 2. A film forming method using an ultrafine particle beam according to claim 1, characterized in that the film forming substance is heated and evaporated. 3. A film forming method using an ultrafine particle beam according to claim 1 or 2, wherein the ultrafine particle beam is heated by radiation heating while flying in a vacuum container. 4 By adjusting the film formation conditions such as the heating temperature and heating time of the ultrafine particle beam while it is flying in the vacuum container, and the pressure difference when the ultrafine particles are blown out through the nozzle into the vacuum container, the crystal structure, density, A film forming method using an ultrafine particle beam according to any one of claims 1 to 3, characterized in that film properties such as electrical resistance and adhesion to a substrate are controlled. 5. An ultrafine particle generation chamber, a film formation chamber that communicates with the ultrafine particle generation chamber through a micropore nozzle, a heating section provided near the exit of the micropore nozzle, and a membrane formation chamber that communicates with the ultrafine particle generation chamber and the film formation chamber, respectively. 1. A film forming apparatus using an ultrafine particle beam, characterized in that it is comprised of a pressure difference generator. 6. A film forming apparatus using an ultrafine particle beam according to claim 5, characterized in that a differential pressure chamber connected to a pressure difference generator is provided between the ultrafine particle generation chamber and the film forming chamber. 7. A patent claim characterized in that the pressure difference generation device comprises an exhaust system connected to each of an ultrafine particle generation chamber, a differential pressure chamber, and a film formation chamber, and a gas supply system connected to the ultrafine particle generation chamber. A film forming apparatus using an ultrafine particle beam in the range 5 or 6. 8. A film forming apparatus using an ultrafine particle beam according to any one of claims 5 to 7, characterized in that a radiation heating device is used as the heating section.