JPH0251249B2 - - Google Patents
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- Publication number
- JPH0251249B2 JPH0251249B2 JP60137231A JP13723185A JPH0251249B2 JP H0251249 B2 JPH0251249 B2 JP H0251249B2 JP 60137231 A JP60137231 A JP 60137231A JP 13723185 A JP13723185 A JP 13723185A JP H0251249 B2 JPH0251249 B2 JP H0251249B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- reservoir
- auxiliary
- slider
- solution storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は液相エピタキシヤル成長において用い
る液相エピタキシヤル成長用溶液の製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for producing a liquid phase epitaxial growth solution used in liquid phase epitaxial growth.
従来の技術
液相エピタキシヤル成長は半導体レーザ等の化
合物半導体素子作製において広く行なわれている
が、結晶成長の際には必要な材料を所定の量だけ
秤量しなければならない。この秤量作業は結晶成
長毎に行なうとかなりの手間となるため、最近は
例えば特開昭59−89411号公報に示されているよ
うに第5図のような装置を用いて一括して成長用
材料溶液の製造が行なわれている。第5図におい
て11は溶液格納治具、12は溶液格納凹部、1
3は補助溶液格納治具、14は補助溶液格納部、
15は溶液だめ、16は溶液、17は補助溶液格
納治具用スライド棒、18は溶液だめ用スライド
棒である。ここで製造方法を説明すると、まず第
5図aに示すように成長に用いられる材料を溶液
だめ15中に仕込み、飽和温度以上の温度に保
ち、仕込まれた材料は溶液16となつて溶解混合
される。続いて第5図bに示すように、溶液だめ
スライド棒18により溶液だめ15を補助溶液格
納治具13上でスライドさせることにより、溶液
16の一部を補助溶液格納部14中に分配する。
さらに補助溶液格納治具用スライド棒17により
補助溶液格納部14が溶液格納凹部12上に位置
するように補助溶液格納治具13をスライドさせ
て上記分配された溶液る溶液格納凹部12中に移
動させる(第5図c)。こののち補助溶液格納治
具13は第5図aに示すように補助溶液格納部1
4が溶液格納凹部12上外に位置するようにスラ
イドされ、上述の工程を繰り返すことによつて溶
液16の残りを補助溶液格納部14を経て溶液格
納凹部12中に分配される。BACKGROUND ART Liquid phase epitaxial growth is widely used in the production of compound semiconductor devices such as semiconductor lasers, but when growing a crystal, a predetermined amount of the necessary material must be weighed. If this weighing operation is performed every time the crystal is grown, it will be quite time-consuming, so recently, as shown in Japanese Patent Application Laid-Open No. 59-89411, a device like the one shown in Fig. Material solutions are being manufactured. In FIG. 5, 11 is a solution storage jig, 12 is a solution storage recess, 1
3 is an auxiliary solution storage jig, 14 is an auxiliary solution storage part,
15 is a solution reservoir, 16 is a solution, 17 is a slide rod for an auxiliary solution storage jig, and 18 is a slide rod for a solution reservoir. To explain the manufacturing method here, first, as shown in FIG. be done. Subsequently, as shown in FIG. 5b, by sliding the solution reservoir 15 on the auxiliary solution storage jig 13 using the solution reservoir slide rod 18, a portion of the solution 16 is distributed into the auxiliary solution storage section 14.
Furthermore, the auxiliary solution storage jig 13 is slid by the auxiliary solution storage jig slide rod 17 so that the auxiliary solution storage section 14 is positioned above the solution storage recess 12, and the distributed solution is moved into the solution storage recess 12. (Figure 5c). After this, the auxiliary solution storage jig 13 is installed in the auxiliary solution storage part 1 as shown in FIG. 5a.
4 is slid to be positioned above and outside the solution storage recess 12, and by repeating the above steps, the remainder of the solution 16 is distributed into the solution storage recess 12 via the auxiliary solution storage 14.
発明が解決しようとする問題点
以上の方法は、溶液16の組成を飽和温度以上
の温度で溶解混合した際に完全には均一にするこ
とができないために補助溶液格納治具13により
何回にも分けて均一となるように溶液格納凹部1
2中に分配する方法であるが、上述のように溶液
16の一部を溶液格納凹部12中に分配するのに
3回のスライド工程を要し、このスライド工程を
何回も繰り返さなければならず、溶液16の量を
増せばさらにスライド工程数が増すという欠点が
存在した。本発明は上記欠点を解決するものでス
ライド工程を少なくして作業性を向上させ、かつ
均一な組成をもつて溶液を多数分配することがで
き、したがつて組成の均一な液相エピタキシヤル
成長層を与えられる液相エピタキシヤル成長用材
料溶液の製造方法を提供することを目的とする。Problems to be Solved by the Invention In the above method, the composition of the solution 16 cannot be made completely uniform when it is melted and mixed at a temperature higher than the saturation temperature. Separate the solution storage recesses 1 so that they are uniform.
However, as mentioned above, three sliding steps are required to distribute a portion of the solution 16 into the solution storage recess 12, and this sliding step must be repeated many times. First, there was a drawback that increasing the amount of solution 16 would further increase the number of slide steps. The present invention solves the above-mentioned drawbacks, improves workability by reducing the number of sliding steps, and enables a large number of solutions to be distributed with a uniform composition, thereby achieving liquid phase epitaxial growth with a uniform composition. It is an object of the present invention to provide a method for producing a material solution for liquid phase epitaxial growth provided with a layer.
問題点を解決するための手段
本発明は複数の溶液格納凹部を有する溶液格納
治具と溶液格納凹部に対応した複数の貫通孔を有
するスライダーと前記スライダー上に位置し前記
複数の溶液格納凹部及びスライダーの貫通孔に対
応する複数の貫通孔を下部に有する補助溶液だめ
と前記補助溶液だめ上に位置する溶液だめとを用
い、溶液だめ中の溶液を補助溶液だめに移動さ
せ、続いて前記補助溶液だめの下部貫通孔及びス
ライダーの貫通孔を介して溶液収納治具内の溶液
格納凹部に同時に分配することにより上記目的を
達成するものである。Means for Solving the Problems The present invention provides a solution storage jig having a plurality of solution storage recesses, a slider having a plurality of through holes corresponding to the solution storage recesses, and a slider having a plurality of solution storage recesses and a slider located on the slider. Using an auxiliary solution reservoir having a plurality of through holes at the bottom corresponding to the through holes of the slider and a solution reservoir located above the auxiliary solution reservoir, the solution in the solution reservoir is transferred to the auxiliary solution reservoir, and then the solution in the auxiliary solution reservoir is transferred to the auxiliary solution reservoir. The above object is achieved by simultaneously distributing the solution to the solution storage recess in the solution storage jig through the lower through-hole of the solution reservoir and the through-hole of the slider.
作 用
本発明は上記構成により溶液だめ中で溶解混合
した溶液を補助溶液だめに移動させることによ
り、溶液が溶液だめ中にある際、溶液の上部、下
部で存在する位置的な組成の不均一性を取り除
き、さらにスライダーの貫通孔を介して同時に溶
液格納凹部に分配させることにより分配された
個々の溶液間の組成のばらつきをなくするように
したものである。Effects The present invention uses the above-described structure to move the solution dissolved and mixed in the solution reservoir to the auxiliary solution reservoir, thereby improving the positional compositional non-uniformity that exists at the top and bottom of the solution when the solution is in the solution reservoir. Furthermore, by simultaneously distributing the solutions to the solution storage recesses through the through-holes of the slider, it is possible to eliminate variations in composition among the individual solutions distributed.
実施例
以下に図面を参照して本発明を詳細に説明す
る。第1図は本発明の一実施例の製造方法におい
て用いる製造治具の断面図である。図において2
1は溶液格納治具、22は溶液格納凹部、23は
スライダー、24は補助溶液だめ、25は溶液だ
め、26は溶液、27はスライダー用スライド
棒、28は溶液だめ用スライド棒である。溶液格
納治具、21は溶液格納凹部22中に分配された
溶液を取り出すために底部が取りはずせるように
してある。スライダー23は溶液格納凹部22の
上部開口部30に対応した貫通孔29を有してお
り、後で説明する製造工程の最初の状態では前記
上部開口部30外に貫通孔がくるように位置させ
ておく。補助溶液だめ24はスライダー23上に
位置し、下部にスライダー23をはさんで溶液格
納凹部22の上部開口部30に対応した位置にそ
れぞれ貫通孔29を有している。また上部には溶
液だめ25中の溶液26を移動させる貫通孔29
を有している。溶液だめ25は補助溶液だめ24
上に位置し、下部に溶液26を補助溶液だめ24
に移動させる貫通孔29を有し、製造工程の最初
の状態では該貫通孔29が補助溶液だめ24の上
部貫通孔29外にくるように位置させておく。溶
液だめ25は溶液26がなるべく均一に溶解混合
して位置的に組成の不均一性が生じるのを防ぐた
めに水平方向及び高さ方向の寸法が極端に異なら
ないような形状としておき、溶液がすべて補助溶
液だめ24に流れ落ちるように底部にはテーパー
をつけてある。補助溶液だめ24は水平方向に大
きく高さ方向に小さな寸法となつており、溶液2
6がすべて流れ落ちてほぼいつぱいとなるような
容積にしておく。EXAMPLES The present invention will be described in detail below with reference to the drawings. FIG. 1 is a sectional view of a manufacturing jig used in a manufacturing method according to an embodiment of the present invention. In the figure 2
1 is a solution storage jig, 22 is a solution storage recess, 23 is a slider, 24 is an auxiliary solution reservoir, 25 is a solution reservoir, 26 is a solution, 27 is a slide rod for the slider, and 28 is a slide rod for the solution reservoir. The solution storage jig 21 has a removable bottom portion in order to take out the solution dispensed into the solution storage recess 22. The slider 23 has a through hole 29 corresponding to the upper opening 30 of the solution storage recess 22, and is positioned so that the through hole is outside the upper opening 30 in the initial state of the manufacturing process, which will be explained later. I'll keep it. The auxiliary solution reservoir 24 is located on the slider 23, and has through holes 29 at positions corresponding to the upper openings 30 of the solution storage recesses 22 with the slider 23 sandwiched between them. Also, in the upper part, there is a through hole 29 for moving the solution 26 in the solution reservoir 25.
have. Solution reservoir 25 is auxiliary solution reservoir 24
An auxiliary solution reservoir 24 located at the top and a solution 26 at the bottom.
In the initial state of the manufacturing process, the through hole 29 is positioned outside the upper through hole 29 of the auxiliary solution reservoir 24. In order to dissolve and mix the solution 26 as uniformly as possible and to prevent positional non-uniformity of composition, the solution reservoir 25 is shaped so that its dimensions in the horizontal and height directions do not differ significantly. The bottom is tapered to allow the solution to flow down into the auxiliary solution reservoir 24. The auxiliary solution reservoir 24 is large in the horizontal direction and small in the height direction.
Make the volume so that all of 6 will flow down and it will be almost full.
一般に溶液は溶液だめ25内にて飽和温度以上
の温度にある一定時間保たれ溶解混合されるが完
全には均一には解け込まず、特に上部と下部とで
組成の不均一が見られ、溶液を溶液だめ25下部
貫通孔から順に分配していくと最初のほうと後の
ほうとで分配された溶液間に組成のばらつきが出
てしまう。したがつてこれらの溶液を用いて得ら
れた液相エピタキシヤル成長層にも組成のばらつ
きが出て不具合が生じる。本実施例ではこのよう
な不具合を溶液だめ中の溶液を一度補助溶液だめ
24中に流し落とすことにより解決している。す
なわち前述のように、水平方向に大きく高さ方向
に小さな寸法の補助溶液だめ24に溶液を流し落
とすことにより溶液が均一に広がり、この状態で
適当な時間保つと溶液だめ中にあつた時に存在し
た位置的な組成の不均一が解消できる。さらに後
述するように、この状態で溶液をスライダー23
の移動によりスライダー23の貫通孔29を介し
て同時に溶液格納凹部22中に分配することによ
り、分配された個々の溶液には分配の際のばらつ
きが入らず均一な組成の溶液がそれぞれ得られ
る。次に製造工程について説明すると、まず必要
な半導体材料を所定の量、溶液だめ25中に仕込
み、第1図に示すような各治具の位置関係のもと
に飽和温度以上の温度に一定時間保つて溶解混合
し溶液16とする。 Generally, the solution is kept at a temperature higher than the saturation temperature in the solution reservoir 25 for a certain period of time to dissolve and mix, but the solution is not completely uniformly dissolved, and the composition is particularly non-uniform between the upper and lower parts. If the solution is distributed sequentially from the lower through-hole of the solution reservoir 25, there will be variations in composition between the solutions distributed at the beginning and at the end. Therefore, liquid phase epitaxially grown layers obtained using these solutions also have compositional variations and problems. In this embodiment, such a problem is solved by once draining the solution in the solution reservoir into the auxiliary solution reservoir 24. That is, as mentioned above, by pouring the solution into the auxiliary solution reservoir 24, which is large in the horizontal direction and small in the height direction, the solution is spread uniformly, and if this state is maintained for an appropriate period of time, the liquid that exists when it is in the solution reservoir is It is possible to eliminate the positional non-uniformity of the composition. Further, as described later, in this state, the solution is transferred to the slider 23.
By simultaneously distributing the solution into the solution storage recess 22 through the through hole 29 of the slider 23 by the movement of the slider 23, the distributed individual solutions are free from variations during distribution and each solution has a uniform composition. Next, to explain the manufacturing process, first, a predetermined amount of the necessary semiconductor material is placed in the solution reservoir 25, and then heated to a temperature above the saturation temperature for a certain period of time based on the positional relationship of each jig as shown in Figure 1. Dissolve and mix to obtain solution 16.
次に第2図に示すように、溶液だめ用スライド
棒28によつて溶液だめ28をその下部貫通孔3
1か補助溶液だめ24の上部貫通孔29に一致す
るようにスライドさせ、溶液26を補助溶液だめ
24中に流し落とす。このとき溶液26は前述の
ように水平方向に一様に広がり、ここで一定時間
(溶液だめ中における一定時間より短かくてよい)
保つと位置的な組成の不均一性が解消される。続
いて第3図に示すように、今度はスライダー用ス
ライド棒27を介してスライダー23の各貫通孔
29が補助溶液だめ24の下部貫通孔31にそれ
ぞれ一致するようにスライダー23をスライドさ
せ、溶液26を同時に溶液格納部22中に分配し
て溶液26′とする。溶液26′は室温まで降温し
たのち、第4図に示すように溶液格納治具21の
底部を取りはずすことにより取り出す。以上のよ
うな工程により、溶液とする半導体材料として
In、InP、InAs、GaAsを用いて4元混晶である
InGaAsPの成長用溶液を製造し、それを用いた
液相エピタキシヤル成長層間の組成を調べた結
果、均一な組成のものが得られた。また溶液を補
助溶液だめに流し込んで一定に保つ時間としては
20分程度で十分であり、スライド工程も2回です
み、従来例に比して簡便さの点で大きく優れてい
る。 Next, as shown in FIG.
1 to the upper through-hole 29 of the auxiliary solution reservoir 24, and the solution 26 is poured into the auxiliary solution reservoir 24. At this time, the solution 26 spreads uniformly in the horizontal direction as described above, and remains there for a certain period of time (which may be shorter than the certain period of time in the solution reservoir).
By maintaining the positional composition, non-uniformity is eliminated. Next, as shown in FIG. 3, the slider 23 is slid using the slider slide rod 27 so that each through hole 29 of the slider 23 corresponds to the lower through hole 31 of the auxiliary solution reservoir 24, and the solution is removed. 26 is simultaneously distributed into the solution storage 22 to form a solution 26'. After the solution 26' has cooled to room temperature, it is taken out by removing the bottom of the solution storage jig 21, as shown in FIG. Through the above process, it can be used as a semiconductor material in solution.
Quaternary mixed crystal using In, InP, InAs, and GaAs
As a result of producing an InGaAsP growth solution and investigating the composition between the liquid-phase epitaxial growth layers, a uniform composition was obtained. Also, the time required to keep the solution constant by pouring it into the auxiliary solution reservoir is
Approximately 20 minutes is sufficient, and the sliding process only needs to be performed twice, which is much easier than the conventional method.
発明の効果
以上説明したように本発明は溶液だめ中の溶液
を水平方向に大きな寸法をもつ補助溶液だめに流
し落として均一に広げることにより溶液の組成の
位置的な均一性を解消し、さらに補助溶液だめか
ら溶液格納凹部へ同時に分配することにより、分
配された溶液間に組成のばらつきがなく、したが
つてそれを用いて成長した液相エピタキシヤル成
長層間にも組成のばらつきが見られず、製造方法
も簡単なことからその有用性は大きいものであ
る。Effects of the Invention As explained above, the present invention eliminates the positional uniformity of the composition of the solution by pouring the solution in the solution reservoir into an auxiliary solution reservoir having a large horizontal dimension and spreading it uniformly. By simultaneously distributing the solution from the auxiliary solution reservoir to the solution storage recess, there is no compositional variation between the distributed solutions, and therefore no compositional variation is observed between the liquid phase epitaxial growth layers grown using the solution. , and its usefulness is great because the manufacturing method is simple.
第1図から第4図は本発明の一実施例の液相エ
ピタキシヤル成長用溶液の製造工程を示す断面工
程図、第5図は従来例の液相エピタキシヤル成長
用溶液の製造工程を示す断面工程図である。
11,21……溶液格納治具、12,22……
溶液格納凹部、13……補助溶液格納治具、14
……補助溶液格納部、23……スライダー、24
……補助溶液だめ、15,25……溶液だめ、1
6,26……溶液、17……補助溶液格納治具用
スライド棒、27……スライダー用スライド棒、
18,28……溶液だめ用スライド棒。
1 to 4 are cross-sectional process diagrams showing the manufacturing process of a liquid phase epitaxial growth solution according to an embodiment of the present invention, and FIG. 5 shows a manufacturing process of a conventional liquid phase epitaxial growth solution. It is a cross-sectional process diagram. 11, 21... Solution storage jig, 12, 22...
Solution storage recess, 13... Auxiliary solution storage jig, 14
... Auxiliary solution storage section, 23 ... Slider, 24
...Auxiliary solution reservoir, 15,25...Solution reservoir, 1
6, 26...Solution, 17...Sliding rod for auxiliary solution storage jig, 27...Sliding rod for slider,
18, 28... Slide rod for solution reservoir.
Claims (1)
と、前記溶液格納治具の上に位置し、前記溶液格
納凹部に対応した複数の貫通孔を有するスライダ
ーと、前記スライダー上に位置し前記複数の溶液
格納凹部及びスライダーの貫通孔に対応する複数
の貫通孔を下部に有する補助溶液だめと、前記補
助溶液だめ上に位置する溶液だめとを具備し、前
記溶液だめ中に液相エピタキシヤル成長に用いる
材料を仕込み、溶解混合して溶液としたのち、該
溶液を補助溶液だめに移動させ、続いて前記補助
溶液だめの下部貫通孔及びスライダーの貫通孔を
介して溶液収納治具内の溶液収納凹部に分配して
液相エピタキシヤル成長に用いる溶液を製造する
ことを特徴とする液相エピタキシヤル成長用溶液
の製造方法。1. A solution storage jig having a plurality of solution storage recesses, a slider located on the solution storage jig and having a plurality of through holes corresponding to the solution storage recesses, and a slider located on the slider and having a plurality of through holes corresponding to the solution storage recesses. An auxiliary solution reservoir having a plurality of through holes at its lower part corresponding to the solution storage recess and the through holes of the slider, and a solution reservoir located above the auxiliary solution reservoir, and a solution reservoir for liquid phase epitaxial growth in the solution reservoir. After the materials to be used are prepared, dissolved and mixed to form a solution, the solution is transferred to an auxiliary solution reservoir, and then the solution is stored in the solution storage jig through the lower through-hole of the auxiliary solution reservoir and the through-hole of the slider. 1. A method for producing a solution for liquid phase epitaxial growth, which comprises distributing the solution into a recess to produce a solution for liquid phase epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60137231A JPS61294813A (en) | 1985-06-24 | 1985-06-24 | Manufacture of solution for liquid phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60137231A JPS61294813A (en) | 1985-06-24 | 1985-06-24 | Manufacture of solution for liquid phase epitaxy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61294813A JPS61294813A (en) | 1986-12-25 |
| JPH0251249B2 true JPH0251249B2 (en) | 1990-11-06 |
Family
ID=15193846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60137231A Granted JPS61294813A (en) | 1985-06-24 | 1985-06-24 | Manufacture of solution for liquid phase epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294813A (en) |
-
1985
- 1985-06-24 JP JP60137231A patent/JPS61294813A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61294813A (en) | 1986-12-25 |
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