JPH0256434B2 - - Google Patents
Info
- Publication number
- JPH0256434B2 JPH0256434B2 JP62270265A JP27026587A JPH0256434B2 JP H0256434 B2 JPH0256434 B2 JP H0256434B2 JP 62270265 A JP62270265 A JP 62270265A JP 27026587 A JP27026587 A JP 27026587A JP H0256434 B2 JPH0256434 B2 JP H0256434B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- tank
- plating
- plating solution
- diaphragm tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は鍍金技術に係り、鍍金の厚付けにおけ
る組織の粗大化および鍍金面上のコブ状析出物の
発生を抑制することができる新規隔膜鍍金法に関
するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to plating technology, and provides a novel diaphragm that can suppress the coarsening of the structure during thick plating and the generation of lump-like precipitates on the plating surface. It concerns the plating method.
電気鍍金では鍍金槽の鍍金液中にアノード極板
と被鍍金物を浸漬して各種鍍金を行なつている
が、ことに鉛鍍金の厚付けにおいて膜厚が100μm
程度になると組織の粗大化が生じ、いわゆるコブ
状析出物(Nodule)が発生してくる。これは鍍
金液中に存在する不純物が影響しているものと考
えられており、従来ではこのコブ状析出物の発生
を抑制する手段として、アノード極板から溶解す
る不純物をアノードバツクを用いて捕捉する方法
を講じている。
In electroplating, various types of plating are performed by immersing the anode plate and the object to be plated in a plating solution in a plating tank.In particular, when applying thick lead plating, the film thickness is 100μm.
When it reaches a certain level, the structure becomes coarser and so-called nodule-like precipitates are generated. This is thought to be caused by impurities present in the plating solution, and conventionally, as a means of suppressing the generation of lump-like precipitates, an anode bag is used to capture impurities that dissolve from the anode plate. We are taking measures to
しかし上記アノードバツクを用いて不純物を捕
捉する方法では、該アノードバツクの構造上、縫
目や綻びからの不純物のわずかな漏れを防止する
ことができず、鍍金厚付けにおける組織の粗大化
やコブ状析出物の発生を完全に阻止することがで
きないものであつた。
However, with the above method of trapping impurities using an anode bag, due to the structure of the anode bag, it is not possible to prevent the slight leakage of impurities from seams and cracks, resulting in coarsening of the structure and lumps in the thick plating. However, it was not possible to completely prevent the formation of precipitates.
本発明は上記問題に鑑みてなされたもので、鍍
金液中にアノード極板から析出した不純物の影響
を解消し、鍍金組織の微細化とコブ状析出物の発
生防止を図ることができる隔膜鍍金法を提唱する
ことを目的とするものである。 The present invention has been made in view of the above problems, and is a diaphragm plating method that eliminates the influence of impurities precipitated from the anode plate in the plating solution, refines the plating structure, and prevents the formation of lump-like precipitates. Its purpose is to advocate the law.
鍍金槽内に隔膜を有する隔膜槽を設置して、被
鍍金物が配される隔膜槽内の鍍金液と、アノード
極板が配される隔膜槽と鍍金槽間の鍍金液の間
を、数ミクロン以下の平均孔径の微細孔を有する
前記隔膜で仕切り、前記隔膜槽と鍍金槽の間の鍍
金液を配管および該配管中途に設けた濾過装置を
介して隔膜槽内へ環流する一方、隔膜槽内の鍍金
液を隔膜槽と鍍金槽の間へ溢出させて、隔膜槽内
の液面レベルを隔膜槽と鍍金槽の間の液面レベル
よりも高位に保持する構成とした。
A diaphragm tank having a diaphragm is installed in the plating tank, and the plating solution in the diaphragm tank where the object to be plated is arranged and the plating solution between the diaphragm tank where the anode plate is arranged and the plating tank is separated several times. The plating solution between the diaphragm tank and the plating tank is partitioned by the diaphragm having micropores with an average pore diameter of microns or less, and the plating solution is circulated into the diaphragm tank via piping and a filtration device installed midway through the piping. The plating solution inside the diaphragm tank overflows into the space between the diaphragm tank and the plating tank, and the liquid level in the diaphragm tank is maintained at a higher level than the liquid level between the diaphragm tank and the plating tank.
本発明によると、被鍍金物側とアノード極板側
との間を隔膜槽の隔膜で仕切り、被鍍金物の存す
る隔膜槽内の液面レベルをアノード極板の存する
隔膜槽と鍍金槽の間の液面レベルよりも高位に保
持することによつて、隔膜槽内の液圧が相対的に
高圧になるので、アノード極板から溶け出した不
純物が隔膜の微細孔から隔膜槽内へ侵入したり、
前記微細孔に食い込んで目詰まりを起こすといつ
たことがなく、この不純物は、鍍金液が隔膜槽と
鍍金槽の間から配管を介して隔膜槽へ環流される
過程で濾過装置により除去されるので、隔膜槽内
の被鍍金物周囲の鍍金液は、常に高純度に保持さ
れる。
According to the present invention, the side of the object to be plated and the side of the anode electrode plate are partitioned by the diaphragm of the diaphragm tank, and the liquid level in the diaphragm tank in which the object to be plated exists is controlled between the diaphragm tank in which the anode electrode plate exists and the plating tank. By maintaining the liquid level higher than the liquid level of the diaphragm, the liquid pressure in the diaphragm tank becomes relatively high, so impurities dissolved from the anode plate can enter the diaphragm tank through the micropores of the diaphragm. Or,
There have been no reports of impurities biting into the micropores and causing clogging, and these impurities are removed by a filtration device during the process in which the plating solution is circulated from between the diaphragm tank and the plating tank to the diaphragm tank via piping. Therefore, the plating solution around the object to be plated in the diaphragm tank is always maintained at a high purity.
以下、本発明に係る隔膜鍍金法を実施するため
の鍍金装置の一実施例を図面にしたがつて説明す
る。符号1は鉛鍍金槽であり、該鉛鍍金槽1内に
隔膜槽2を配置するとともに、両槽1,2間およ
び隔膜槽2内に鍍金液3を貯留してなる。上記隔
膜槽2の側面に形成した矩形窓4には微細孔を備
えた隔膜5を張設してあり、前記鉛鍍金槽1の上
端に架設した懸吊桿6に該隔膜5と正対したアノ
ード極板7を鍍金液3中に浸漬するように懸吊す
るとともに、隔膜槽2内の鍍金液3中に浸漬する
ように被鍍金物aを懸吊してなる。上記隔膜槽2
の側面には両槽1,2間の鍍金液3面レベルL1
より高位置に溢液孔8を穿設し、隔膜槽2内の鍍
金液3面レベルL2から該溢液孔8を介して両槽
1,2間に鍍金液3が流れ落ちるように構成して
なる。上記隔膜5は第3図に示すように、ポリエ
チレン不織布またはポリエステル不織布によつて
構成した骨材9にポリ塩化ビニルまたはポリフツ
化ビニリデン等からなる多孔性(平均孔径0.1μm
ないし数μm)の膜材10を添設したものである。
また符号11は鉛鍍金槽1の外部に設けた濾過装
置であり、吸入側配管12を鉛鍍金槽1内の底部
近傍に開口するとともに、吐出側配管13を隔膜
槽2内に開口してなる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a plating apparatus for carrying out the diaphragm plating method according to the present invention will be described below with reference to the drawings. Reference numeral 1 denotes a lead plating tank, in which a diaphragm tank 2 is disposed, and a plating solution 3 is stored between the two tanks 1 and 2 and in the diaphragm tank 2. A rectangular window 4 formed on the side surface of the diaphragm tank 2 is covered with a diaphragm 5 having fine holes. The anode plate 7 is suspended so as to be immersed in the plating solution 3, and the object a to be plated is suspended so as to be immersed in the plating solution 3 in the diaphragm tank 2. The above diaphragm tank 2
On the side of the plating liquid 3 level L1 between both tanks 1 and 2
A liquid overflow hole 8 is bored at a higher position, and the plating liquid 3 is configured to flow down between the two tanks 1 and 2 from the level L2 of the third surface of the plating liquid in the diaphragm tank 2 through the overflow hole 8. Become. As shown in FIG. 3, the diaphragm 5 has a porous structure (average pore diameter 0.1 μm
A membrane material 10 with a thickness of 1 to 10 μm is attached.
Reference numeral 11 denotes a filtration device installed outside the lead plating tank 1, in which the suction side pipe 12 is opened near the bottom of the lead plating tank 1, and the discharge side pipe 13 is opened into the diaphragm tank 2. .
上記構成の鍍金槽では、鍍金液3を濾過装置1
1によつて常時矢印A方向に循環しながら、アノ
ード極板7と被鍍金物aに所定電圧の直流電圧を
印加して鍍金処理を行なうものであり、鍍金処理
中は常時溢液孔8を介して隔膜槽2内の鍍金液3
面レベルL2から鉛鍍金槽1の鍍金液レベルL1
に鍍金液3が流れ落ちている。また、上記レベル
L1とL2の設定によつて、被鍍金物aが浸漬さ
れた隔膜槽2内の液圧は、アノード極板7から溶
け出した不純物が混在する隔膜槽2外の液圧より
も相対的に高圧になつており、隔膜5の微細孔内
では隔膜槽2外へ向けて鍍金液の流れが生じてい
る。したがつて鍍金液3にアノード極板7から溶
け出した不純物は隔膜5によつて隔膜槽2内への
侵入を阻止せられる。また、該不純物は吸入側配
管12から濾過装置11に鍍金液3と一緒に排出
され、該濾過装置11によつて濾過除去処理され
るとともに、再利用可能な浄化した鍍金液3が吐
出側配管12を介して隔膜槽2内に環流される。 In the plating tank configured as described above, the plating solution 3 is filtered through the filtration device 1.
1, the plating process is performed by applying a DC voltage of a predetermined voltage to the anode plate 7 and the object to be plated while constantly circulating in the direction of the arrow A. During the plating process, the overflow hole 8 is always kept closed. The plating solution 3 in the diaphragm tank 2
From surface level L2 to plating liquid level L1 of lead plating tank 1
Plating liquid 3 is flowing down. Furthermore, by setting the levels L1 and L2, the liquid pressure inside the diaphragm tank 2 in which the object to be plated a is immersed is lower than the liquid pressure outside the diaphragm tank 2 where impurities dissolved from the anode plate 7 are mixed. The pressure is also relatively high, and the plating solution flows inside the micropores of the diaphragm 5 toward the outside of the diaphragm tank 2. Therefore, impurities dissolved into the plating solution 3 from the anode plate 7 are prevented from entering the diaphragm tank 2 by the diaphragm 5. Further, the impurities are discharged from the suction side piping 12 to the filtration device 11 together with the plating solution 3, and are filtered and removed by the filtration device 11, and the purified plating solution 3 that can be reused is transferred to the discharge side piping. 12 into the diaphragm tank 2.
したがつて隔膜槽2内にはアノード極板7から
溶解した不純物の存在しない鍍金液3が確保さ
れ、鉛鍍金の厚付け(膜厚100μm以上)におい
て、鍍金組織を微細化することができる。 Therefore, the plating solution 3 free of impurities dissolved from the anode plate 7 is ensured in the diaphragm tank 2, and the plating structure can be refined in thick lead plating (film thickness of 100 μm or more).
以上述べたように本発明に係る隔膜鍍金法は、
電気鍍金においてアノード極板と被鍍金物間の鍍
金液中に隔膜を介在させ、アノード極板側の鍍金
液を濾過装置を介して被鍍金物側へ環流すること
により、被鍍金物周囲の鍍金液を常に高純度に保
持するとともに液面レベル差によつて被鍍金物側
の液圧をアノード極板側の液圧よりも高圧に保持
され、このためアノード極板から溶け出した不純
物が被鍍金物に付着するのを防止でき、かつ不純
物による隔膜の目詰まりも生じないといつた優れ
た効果を奏する。
As described above, the diaphragm plating method according to the present invention
In electroplating, a diaphragm is interposed in the plating solution between the anode electrode plate and the object to be plated, and the plating liquid on the anode electrode plate side is circulated to the object to be plated through a filtration device, thereby reducing the plating around the object to be plated. The liquid is always maintained at a high purity, and the liquid pressure on the object to be plated is maintained at a higher pressure than the liquid pressure on the anode plate due to the liquid level difference, so that impurities dissolved from the anode plate are not covered. It has excellent effects such as being able to prevent adhesion to plated objects and preventing clogging of the diaphragm due to impurities.
第1図は本発明に係る隔膜鍍金法を実施する鍍
金装置の一実施例を示す隔膜鍍金装置の斜視図、
第2図は鍍金槽の要部断面図、第3図は隔膜の構
造を示す拡大断面図である。
1…鉛鍍金槽、2…隔膜槽、3…鍍金液、5…
隔膜、7…アノード極板、8…溢液孔、11…濾
過装置、12…吸入側配管、13…吐出側配管。
FIG. 1 is a perspective view of a diaphragm plating apparatus showing an embodiment of the plating apparatus for carrying out the diaphragm plating method according to the present invention;
FIG. 2 is a sectional view of the main part of the plating tank, and FIG. 3 is an enlarged sectional view showing the structure of the diaphragm. 1...Lead plating tank, 2...Diaphragm tank, 3...Plating solution, 5...
Diaphragm, 7... Anode plate, 8... Overflow hole, 11... Filtration device, 12... Suction side piping, 13... Discharge side piping.
Claims (1)
被鍍金物が配される隔膜槽内の鍍金液と、アノー
ド極板が配される隔膜槽と鍍金槽間の鍍金液の間
を、数ミクロン以下の平均孔径の微細孔を有する
前記隔膜で仕切り、前記隔膜槽と鍍金槽の間の鍍
金液を配管および該配管中途に設けた濾過装置を
介して隔膜槽内へ環流する一方、隔膜槽内の鍍金
液を隔膜槽と鍍金槽の間へ溢出させて、隔膜槽内
の液面レベルを隔膜槽と鍍金槽の間の液面レベル
よりも高位に保持してなることを特徴とする隔膜
鍍金法。1 Install a diaphragm tank with a diaphragm in the plating tank,
The plating solution in the diaphragm tank in which the object to be plated is arranged and the plating solution between the diaphragm tank in which the anode plate is arranged and the plating tank are partitioned by the diaphragm having micropores with an average pore diameter of several microns or less. The plating solution between the diaphragm tank and the plating tank is circulated into the diaphragm tank via piping and a filtration device installed midway through the pipe, while the plating solution in the diaphragm tank overflows into the space between the diaphragm tank and the plating tank. A diaphragm plating method characterized in that the liquid level in the diaphragm tank is maintained at a higher level than the liquid level between the diaphragm tank and the plating tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27026587A JPH01116094A (en) | 1987-10-28 | 1987-10-28 | Diaphragm plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27026587A JPH01116094A (en) | 1987-10-28 | 1987-10-28 | Diaphragm plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01116094A JPH01116094A (en) | 1989-05-09 |
| JPH0256434B2 true JPH0256434B2 (en) | 1990-11-30 |
Family
ID=17483842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27026587A Granted JPH01116094A (en) | 1987-10-28 | 1987-10-28 | Diaphragm plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01116094A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7022211B2 (en) | 2000-01-31 | 2006-04-04 | Ebara Corporation | Semiconductor wafer holder and electroplating system for plating a semiconductor wafer |
| EP1229154A4 (en) | 2000-03-17 | 2006-12-13 | Ebara Corp | Method and apparatus for electroplating |
| ATE429528T1 (en) * | 2005-04-26 | 2009-05-15 | Atotech Deutschland Gmbh | ALKALINE GALVANIC BATH WITH A FILTRATION MEMBRANE |
| JP5257919B2 (en) * | 2007-05-08 | 2013-08-07 | 株式会社 大昌電子 | Plating equipment |
| US9421617B2 (en) | 2011-06-22 | 2016-08-23 | Tel Nexx, Inc. | Substrate holder |
| JP5651737B2 (en) * | 2013-06-03 | 2015-01-14 | 株式会社ムラタ | Plating equipment for nickel plating |
| CN106435695A (en) * | 2016-08-24 | 2017-02-22 | 谢彪 | Electroplating device and method |
-
1987
- 1987-10-28 JP JP27026587A patent/JPH01116094A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01116094A (en) | 1989-05-09 |
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