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JPH0259529B2 - - Google Patents
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JPH0259529B2 - - Google Patents

Info

Publication number
JPH0259529B2
JPH0259529B2 JP59018253A JP1825384A JPH0259529B2 JP H0259529 B2 JPH0259529 B2 JP H0259529B2 JP 59018253 A JP59018253 A JP 59018253A JP 1825384 A JP1825384 A JP 1825384A JP H0259529 B2 JPH0259529 B2 JP H0259529B2
Authority
JP
Japan
Prior art keywords
force
layer
rotation angle
amorphous
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59018253A
Other languages
Japanese (ja)
Other versions
JPS60163247A (en
Inventor
Kyuzo Nakamura
Yoshifumi Oota
Shin Asari
Tsutomu Azumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP59018253A priority Critical patent/JPS60163247A/en
Priority to US06/698,480 priority patent/US4661420A/en
Priority to EP85300775A priority patent/EP0152269B1/en
Priority to DE8585300775T priority patent/DE3577247D1/en
Publication of JPS60163247A publication Critical patent/JPS60163247A/en
Publication of JPH0259529B2 publication Critical patent/JPH0259529B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/739Magnetic recording media substrates
    • G11B5/73911Inorganic substrates
    • G11B5/73921Glass or ceramic substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)

Description

【発明の詳細な説明】 本発明は光磁気記録体に関する。[Detailed description of the invention] The present invention relates to a magneto-optical recording medium.

最近、光磁気記録体は、レーザー光を用いて記
録再生を行なう高密度記録可能な新しい方式とし
て注目されているが、その再生方法として、偏光
されたレーザー光が磁性体表面で反射するか透過
する際に偏光面が回転することを利用している。
従つてこの回転角即ち力−回転角が大きいことが
望まれる。この力−回転角を大きくする方法とし
て、磁性層の表面に、SiO,SiO2,ZnS,Si3N4
AIN,TiO2,Al2O3,Ta2O3などの透明誘電体層
を設けることが知られており、この場合、これら
の力−回転を大きくする物質のうち、屈折率の大
きいもの程力−回転角を大きくする効果(エンハ
ンス効果)があることも知られている。特に透明
基板側からレーザー光を照射して再生する場合に
は、基板として用いられるガラスやPMMAの屈
折率が約1.5であるので、空気側から再生を行な
う場合に比べて更に高い屈折率を有する物質が望
ましい。
Recently, magneto-optical recording media have been attracting attention as a new method that enables high-density recording and reproduction using laser light. It takes advantage of the fact that the plane of polarization rotates when doing so.
Therefore, it is desired that this rotation angle, that is, the force-rotation angle be large. As a method of increasing this force-rotation angle, SiO, SiO 2 , ZnS, Si 3 N 4 ,
It is known to provide a transparent dielectric layer such as AIN, TiO 2 , Al 2 O 3 , Ta 2 O 3 , etc. In this case, among these materials that increase force-rotation, the one with a higher refractive index It is also known that there is an effect of increasing the force-rotation angle (enhancement effect). In particular, when reproducing by irradiating laser light from the transparent substrate side, the refractive index of the glass or PMMA used as the substrate is approximately 1.5, so the refractive index is even higher than when reproducing from the air side. Substance is preferred.

本発明者は、力−回転角の増大に用いられる物
質は、レーザーの波長800nm近傍に対して透明で
あれば足り、従来の誘電体物質のように可視光全
域に亘つて透明である必要はないとの観点から
種々の物質を検討した結果、屈折率が3.0〜3.8と
非常に高く且つレーザー光の波長に対してもある
程度の透過率をもつアモルフアスSiを従来の透明
誘電体層の代りに用いることにより、従来の誘電
体物質より著しく大きい力−回転角の増大効果を
もたらすことを認めた。この場合、アモルフアス
Siは光吸収端が1000nm付近にあるので800nmで
はレーザー光は或る程度吸収されてしまう傾向が
あるので、エネルギーギヤツプを大きくさせ光吸
収端を短波長側に移動させれば800nm付近の光吸
収は減少し力−回転角を更に増大できる観点より
検討し、そのアモルフアスSiのエネルギーギヤツ
プを増大させる方法として、アモルフアスSiに
H,F,C,N,Oを混入させることにより力−
回転角の増大をもたらすことを知見した。而して
多くの試験研究の結果、これら元素の1種又は2
種以上をアモルフアスSiに50at%以下混入するこ
と、好ましくは30at%以下混入することにより上
記の効果を有することを知見した。
The inventor believes that the material used to increase the force-rotation angle only needs to be transparent to the laser wavelength of around 800 nm, and does not need to be transparent over the entire visible light range like conventional dielectric materials. As a result of examining various materials from the viewpoint of 3.0 to 3.8, we decided to use amorphous Si, which has a very high refractive index of 3.0 to 3.8 and has a certain degree of transmittance to the wavelength of laser light, in place of the conventional transparent dielectric layer. It has been found that the use of this material provides a force-rotation angle enhancement effect that is significantly greater than that of conventional dielectric materials. In this case, amorphous
Since the optical absorption edge of Si is around 1000 nm, laser light tends to be absorbed to some extent at 800 nm. Therefore, if the energy gap is increased and the optical absorption edge is moved to the shorter wavelength side, the optical absorption edge at around 800 nm can be absorbed. We considered the possibility of reducing optical absorption and further increasing the force-rotation angle, and as a way to increase the energy gap of amorphous Si, we added H, F, C, N, and O to the amorphous Si to increase the force. −
It was found that this results in an increase in the rotation angle. As a result of many experimental studies, one or two of these elements
It has been found that the above effects can be obtained by mixing 50 at% or less, preferably 30 at% or less, of amorphous Si with at least 50 at% of amorphous Si.

このように、本発明は、上記の要求を満足した
光磁気記録体を提供するもので、磁性層の片面又
は両面に力−回転角を増大する層としてアモルフ
アスSi層を設けて成る。更にその力−回転角の増
大効果をもたらす光磁気記録体を提供するもの
で、H,F,C,N,Oのうちから選んだ少くと
も1種の元素を50at%以下混入したアモルフアス
Si層を設けて成る。
Thus, the present invention provides a magneto-optical recording medium that satisfies the above requirements, and is comprised of an amorphous Si layer provided on one or both sides of a magnetic layer as a layer for increasing the force-rotation angle. Furthermore, the present invention provides a magneto-optical recording medium that has the effect of increasing the force-rotation angle.
It consists of a Si layer.

更に本発明を実施例につき説明する。 The invention will be further explained with reference to examples.

アモルフアスSi層は、公知のスパツタ法、RF
スパツタ法プラズマCVD法、蒸着法、イオンプ
レーテイング法、光CVD法等によりガラス等の
透明基板の上面に形成する。アモルフアスSi(以
下a−Siと略記する)にH,F,C,N,Oのう
ちのいづれか1つ又は2以上の元素を混入したa
−Si:H,a−Si:F,a−SiC:H,a−SiN
−H,a−SiO:Hなどの層を形成するには、例
えばH2ガス、N2ガス、O2ガス、SiH4ガス、SiF4
などの単独又は混合ガスを処理容器中に導入し
RFスパツタ法あるいはプラズマCVD法を用い
た。Cの混入には、Siターゲツト上にグラフアイ
トペレツトを多数個置いたターゲツトを用いた。
このように作成したa−Si層、a−Si:Hなどの
元素混入a−Si層などの表面に、25at%Tb−Fe
膜(1000Å)を作成し、更にその上に保護膜とし
て1000ÅのSiO2膜を形成した。尚、a−Si層や
a−Si:H層などの上記元素混入の層につき、そ
の厚さと力−回転角との関係を検べるため、厚さ
の異なる夫々の上記試料を作成した。力−回転角
の測定には830nmの半導体レーザーを用いた。又
上記のTb−Fe膜やSiO2膜を形成しない各試料を
用いて光吸収率と屈折率を測定した。
The amorphous Si layer can be formed using the well-known sputtering method, RF
It is formed on the upper surface of a transparent substrate such as glass by a sputter method plasma CVD method, vapor deposition method, ion plating method, optical CVD method, etc. a, in which one or more elements of H, F, C, N, and O are mixed into amorphous Si (hereinafter abbreviated as a-Si);
-Si:H, a-Si:F, a-SiC:H, a-SiN
-H, a-SiO: To form a layer such as H, for example, H 2 gas, N 2 gas, O 2 gas, SiH 4 gas, SiF 4
Introducing single or mixed gases such as
The RF sputtering method or plasma CVD method was used. For mixing C, a target consisting of a large number of graphite pellets placed on a Si target was used.
25at%Tb-Fe was applied to the surface of the a-Si layer created in this way, the a-Si layer mixed with elements such as a-Si:H, etc.
A film (1000 Å) was created, and a 1000 Å SiO 2 film was further formed on it as a protective film. Incidentally, in order to examine the relationship between the thickness and the force-rotation angle of the layers containing the above elements such as the a-Si layer and the a-Si:H layer, the above-mentioned samples having different thicknesses were prepared. An 830 nm semiconductor laser was used to measure the force-rotation angle. Furthermore, the light absorption rate and refractive index were measured using each sample on which the above-mentioned Tb-Fe film and SiO 2 film were not formed.

第1図は、a−Si層の膜厚の変化と力−回転角
の変化を示す。比較のため、従来の誘電体の例と
してTiO2層を形成した時の測定結果を併せて示
した。第1図より明らかなように、Tb−Fe膜の
みでは力−回転角は約15minであるが、本発明の
a−Si層を形成すると力−回転角は最大40minま
で増大することが認められ、従来のTiO2誘電体
では最大25minであり且つその膜厚の変化全体に
亘り、a−Si層が、誘電体に比し回転角の増大効
果が優れていることが認められる。最大を示す膜
厚は、TiO2層が650Åであるに対し、a−Si層で
は450Åである。これは屈折率がTiO2では2.3で
あるに対し、a−Siでは3.7と大きいためである。
FIG. 1 shows the change in thickness of the a-Si layer and the change in force-rotation angle. For comparison, we also show the measurement results when two TiO layers were formed as an example of a conventional dielectric. As is clear from Fig. 1, the force-rotation angle is approximately 15 min with only the Tb-Fe film, but it is observed that when the a-Si layer of the present invention is formed, the force-rotation angle increases to a maximum of 40 min. It is recognized that the a-Si layer has a superior effect of increasing the rotation angle compared to the dielectric material, with the conventional TiO 2 dielectric material having a maximum rotation angle of 25 min and over the entire change in film thickness. The maximum film thickness is 650 Å for the TiO 2 layer, while it is 450 Å for the a-Si layer. This is because TiO 2 has a refractive index of 2.3, whereas a-Si has a large refractive index of 3.7.

この最大の力−回転角が得られた450Åのa−
Si層のみの光吸収率を測定したところ、830nmの
レーザー光に対して10%であつた。この光吸収率
を低減させるため、H,C,O,Nなどを添加し
たa−Si層を作成すると光吸収率は減少すること
が認められた。かゝる添加すべき元素の添加量と
力−回転角の関係を検べた。第2図は最大値の力
−回転角が得られる450Å膜厚のa−Si層におい
ての元素の添加量と力−回転角の関係を示す。
This maximum force-rotation angle was obtained at 450 Å a-
When the light absorption rate of the Si layer alone was measured, it was 10% for 830 nm laser light. In order to reduce this light absorption rate, it was found that when an a-Si layer added with H, C, O, N, etc. was created, the light absorption rate decreased. The relationship between the amount of the element to be added and the force-rotation angle was examined. FIG. 2 shows the relationship between the amount of element added and the force-rotation angle in the a-Si layer with a thickness of 450 Å, which provides the maximum force-rotation angle.

この図から明らかなように、すべての添加元素
において添加量の増大とともに力−回転角の増大
しほゞ10〜30at%で最大値を示した後減少するが
50at%程度まで力−回転角40min以上を維持する
ことが認められた。
As is clear from this figure, the force-rotation angle increases with increasing addition amount for all additive elements, reaches a maximum value at about 10 to 30 at%, and then decreases.
It was confirmed that the force-rotation angle could be maintained at 40 min or more up to about 50 at%.

上記から、添加量が少ない領域では光の吸収量
を低減することが力−回転角のエンハンスに寄与
し、それ以上添加量を増大させると、光の吸収量
が殆んどなくなるが、屈折率は低下し、その低下
に伴なつて力−回転角は、ゆるやかに減少するこ
とを意味している。尚、2種以上の元素を混入し
た場合も同様の力−回転角の増大傾向が認められ
ることが分つた。
From the above, in the region where the amount of addition is small, reducing the amount of light absorption contributes to enhancing the force-rotation angle, and if the amount of addition is increased beyond that, the amount of light absorption almost disappears, but the refractive index This means that the force-rotation angle gradually decreases as the decrease decreases. It was also found that a similar tendency for the force-rotation angle to increase was observed when two or more elements were mixed.

その結果を第3図に示す。図面で各2種元素の
配合量は等量である。
The results are shown in FIG. In the drawing, the amounts of each two types of elements are equal.

これらの1種又は2種以上の元素の添加によ
り、その元素はSi原子と強い結合力を有し、その
結果エネルギーギヤツプを増大させている。
By adding one or more of these elements, the elements have a strong bonding force with Si atoms, resulting in an increase in the energy gap.

以上の実験は、透明基板側から再生する場合に
ついて行なつたものであるが、空気側から再生す
る型や半透明の磁性層と反射層との間に力−回転
角を増大させる層(いわゆるエンハンス層)を介
在させてフアラデー回転と力−回転の両方を用い
る型の光磁気記録体においても、これらに用いら
れるエンハンス層に本発明のa−Si層又はH,
C,N,F,Oの1種又は2種以上を混入したa
−Si層を用いることにより極めて有効である。
The above experiments were conducted for the case of reproduction from the transparent substrate side, but we also used a type that reproduced from the air side and a layer that increases the force-rotation angle between the translucent magnetic layer and the reflective layer (so-called Even in a type of magneto-optical recording medium that uses both Faraday rotation and force-rotation with an intervening enhancement layer, the a-Si layer of the present invention or H,
a containing one or more of C, N, F, and O
-It is extremely effective by using a Si layer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例の光磁気記録体の膜厚
と力−回転角との関係を従来の光磁気記録体のそ
れと対比して示すグラフ、第2図は他の本発明の
実施例における1種の添加元素の添加量と力−回
転角の大きさとの関係を示すグラフ、第3図は、
他の本発明の実施例における2種の添加元素の添
加量と力−回転角の大きさとの関係を示すグラフ
を示す。
FIG. 1 is a graph showing the relationship between film thickness and force-rotation angle of a magneto-optical recording medium according to an embodiment of the present invention in comparison with that of a conventional magneto-optical recording medium, and FIG. 2 is a graph showing another embodiment of the present invention. A graph showing the relationship between the amount of one kind of additive element and the magnitude of force-rotation angle in the example, FIG.
FIG. 7 is a graph showing the relationship between the amounts of two types of additive elements and the magnitude of force-rotation angle in other examples of the present invention. FIG.

Claims (1)

【特許請求の範囲】 1 磁性層の片面又は両面に力−回転角を増大す
る層としてアモルフアスSi層を設けて成る光磁気
記録体。 2 磁性層の片面又は両面に、H,F,C,N,
Oのうちから選んだ少くとも1種の元素を50at%
程度以下混入したアモルフアスSi層を力−回転を
増大する層として設けることを特徴とする光磁気
記録体。
[Claims] 1. A magneto-optical recording material comprising an amorphous Si layer provided on one or both sides of a magnetic layer as a layer for increasing the force-rotation angle. 2 H, F, C, N, on one or both sides of the magnetic layer.
50 at% of at least one element selected from O
1. A magneto-optical recording material characterized in that an amorphous Si layer mixed to a certain extent is provided as a layer for increasing force-rotation.
JP59018253A 1984-02-06 1984-02-06 Photomagnetic recording medium Granted JPS60163247A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59018253A JPS60163247A (en) 1984-02-06 1984-02-06 Photomagnetic recording medium
US06/698,480 US4661420A (en) 1984-02-06 1985-02-05 Optical magnetic recording member
EP85300775A EP0152269B1 (en) 1984-02-06 1985-02-06 Optical magnetic recording member
DE8585300775T DE3577247D1 (en) 1984-02-06 1985-02-06 MAGNETO-OPTICAL RECORD CARRIER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59018253A JPS60163247A (en) 1984-02-06 1984-02-06 Photomagnetic recording medium

Publications (2)

Publication Number Publication Date
JPS60163247A JPS60163247A (en) 1985-08-26
JPH0259529B2 true JPH0259529B2 (en) 1990-12-12

Family

ID=11966515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59018253A Granted JPS60163247A (en) 1984-02-06 1984-02-06 Photomagnetic recording medium

Country Status (1)

Country Link
JP (1) JPS60163247A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209947A (en) * 1984-04-02 1985-10-22 Nec Corp Optomagnetic recording medium
JPS60209946A (en) * 1984-04-02 1985-10-22 Nec Corp Optomagnetic recording medium
JPS60231937A (en) * 1984-05-01 1985-11-18 Ricoh Co Ltd magneto-optical recording medium
JPS6180639A (en) * 1984-09-28 1986-04-24 Canon Inc optical recording medium
JPS61258353A (en) * 1985-05-10 1986-11-15 Ricoh Co Ltd Photomagnetic recording medium
JPS62157347A (en) * 1985-12-28 1987-07-13 Kyocera Corp Photomagnetic recording element and its production
JPS62293542A (en) * 1986-06-12 1987-12-21 Konica Corp Magneto-optical recording medium
JPS6479954A (en) * 1987-09-22 1989-03-24 Kyocera Corp Magneto-optical recording element
US4917970A (en) * 1988-02-01 1990-04-17 Minnesota Mining & Manufacturing Company Magneto optic recording medium with silicon carbide dielectric

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923017B2 (en) * 1979-06-01 1984-05-30 シャープ株式会社 magneto-optical memory element
JPS57169996A (en) * 1981-04-09 1982-10-19 Sharp Corp Magnetooptic storage element
JPS5938950A (en) * 1982-08-26 1984-03-03 Sharp Corp Magneto-optic storage element

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Publication number Publication date
JPS60163247A (en) 1985-08-26

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