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JPH0259867B2 - - Google Patents
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JPH0259867B2 - - Google Patents

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Publication number
JPH0259867B2
JPH0259867B2 JP1666184A JP1666184A JPH0259867B2 JP H0259867 B2 JPH0259867 B2 JP H0259867B2 JP 1666184 A JP1666184 A JP 1666184A JP 1666184 A JP1666184 A JP 1666184A JP H0259867 B2 JPH0259867 B2 JP H0259867B2
Authority
JP
Japan
Prior art keywords
film
moisture
transparent
water vapor
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1666184A
Other languages
Japanese (ja)
Other versions
JPS60159165A (en
Inventor
Yoshuki Fukumoto
Kazu Yamanaka
Shigemasa Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP1666184A priority Critical patent/JPS60159165A/en
Publication of JPS60159165A publication Critical patent/JPS60159165A/en
Publication of JPH0259867B2 publication Critical patent/JPH0259867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

技術分野 本発明は防湿性を有する透明薄膜の形成方法、
特に基材の種類にかかわらず透明で高い防湿性の
薄膜を形成する方法に関する。 従来技術 包装材料、特に食品、薬品、化学製品などの包
装に用いられる包装材料は、内容物の変質を防ぐ
ために防湿機能をもつていることが必要である。
そのために、従来は、例えばベースプラスチツク
フイルムにアルミニウム箔を貼り合わせてアルミ
ニウム箔の防湿特性を利用することが行われてい
る。この場合の包装材料は、防湿性については優
れているがベースプラスチツクフイルムの透明性
が損なわれ内容物を透視することができない。し
かも、フレキシビリテイが極端に低減するためピ
ンホールを生じるおそれがある。包装材料の別の
例としては、それ自体が防湿性を有する塩化ビニ
リデン系、フツ素系樹脂フイルムがある。これら
フイルムは防湿性を厳しく要求される用途にはフ
イルム厚を厚くしなければならず、製造作業上に
も種々の問題が生じる。 また、プラスチツクの表面に金属アルミを真空
蒸着することにより防湿性を向上させる試みがな
されている。しかし、アルミ蒸着膜は不透明であ
るために、これを包装材料に使用したときには内
容物を透視することができない。しかも、蒸着さ
れたアルミニウムとベースフイルムとの密着強度
も比較的低いためその界面において剥離の生じる
おそれがある。 このような従来の包装材料の欠点を改良すべ
く、例えば特公昭51−48511号公報にはプラスチ
ツク表面に硅素酸化物を蒸着した透明防湿フイル
ムが提案されている。しかしながら、硅素酸化物
は水に溶解するため、これを蒸着したフイルムは
充分な防湿性能を有し得ない。経時的に性能が劣
化するという欠点もある。特開昭54−152089号公
報には金属、金属酸化物および酸化硅素を蒸着し
たポリエステルフイルムが開示されている。この
蒸着フイルムは基材にポリエステルフイルムが用
いられたときのみその防湿性能を発現しうるにす
ぎない。 電子工業分野においても、近年ますます、EL
素子や太陽電池などに透明でしかも高度の耐湿性
能を有する膜が保護膜として要求されつつある。 発明の目的 本発明の目的は、極めて優れた耐湿性を有する
透明薄膜の形成方法を提供することにある。本発
明の他の目的は、基材の種類によらず高い防湿性
を有する透明薄膜の形成方法を提供することにあ
る。 発明の構成 本発明は、系内へ酸素ガスおよび水蒸気を導入
しこれを所定のレベルに制御することにより、そ
の間に基材上に形成される酸化マグネシウムや水
酸化マグネシウムの薄膜が透湿度を極端に低下せ
しめるとの本発明者の新規な知見にもとづいて完
成された。それゆえ、本発明の薄膜形成方法は、
真空槽内に酸素ガスおよび水蒸気を導入しながら
金属マグネシウムを加熱蒸発させることにより透
明な基材上に透明な蒸着薄膜を形成するものであ
り、そのことにより上記目的が達成される。 基材として用いられる透明プラスチツクとして
は、例えば、ポリ塩化ビニル、ポリビニルアルコ
ール、ポリエチレン、ポリプロピレン、ポリエス
テル、ポリ塩化ビニリデン、ナイロン、フツ素樹
脂などがある。しかし、これらに限定される必要
はない。基材の形状も特に限定されず、例えばフ
イルム状あるいは板状であつてもよいし、レンズ
状のプラスチツク成形体であつてもよい。例えば
基材がフレキシブルなフイルムである場合、その
厚みは5〜300μm、好ましくは5〜100μmの範
囲に選ばれる。フイルムを連続的に蒸着するため
には、通常、冷却ロールを通した巻取り工程が必
要である。フイルムが例えば5μm以下のように
薄すぎるとしわの発生や亀裂が生じやすくなる。
厚すぎるとフイルムのフレキシビリテイがなくな
り、連続巻取り操作が不可能となる。 これら透明基材表面に、酸素ガスと水蒸気を導
入しながら金属マグネシウムを加熱蒸着させ、透
明な酸化マグネシウムや水酸化マグネシウムの薄
膜を形成する。具体的には、真空槽内に上記透明
基材を入れ真空槽を真空ポンプで排気しながら、
金属マグネシウムを抵抗加熱、電子ビーム加熱な
どの既知の加熱方法で加熱する。この加熱により
発生するマグネシウムの蒸気の一部と水蒸気と酸
素とが反応し酸化マグネシウムや水酸化マグネシ
ウムからなる薄膜がこの基材上に形成される。槽
内を排気したときに水蒸気が残留ガスの大部分を
占め、その水蒸気も本発明方法に関与するが、水
蒸気圧を一定に制御するためには、水蒸気を外部
から導入するのが好ましい。 導入する酸素ガスおよび水蒸気の量は、通常、
真空槽の容器、真空ポンプの排気能力、金属マグ
ネシウムの蒸発速度などによつて適宜決定され
る。酸素ガス分圧とマグネシウム蒸発速度との比
は8×10-4〜5×10-3トール/(g/min.)であ
ることが好ましい。8×10-4トール/(g/
min.)を下まわると、形成されたマグネシウム
酸化物薄膜中の酸素量が不足するので透明性が損
なわれる。5×10-3トール/(g/min.)を上ま
わると、形成された膜が多孔性となり防湿性が低
下する。 水蒸気分圧とマグネシウム蒸発速度との比は5
×10-5〜2×10-3トール/(g/min.)であるこ
とが好ましい。5×10-5トール/(g/min.)を
下まわると蒸着膜を形成する粒子が大きくなるた
め蒸着膜の膜目があらくなる。その結果、防湿効
果が低下する。2×10-3トール/(g/min.)を
上まわると粒子が成長しすぎ、同じく、防湿効果
が低下する。酸素ガスおよび水蒸気の導入装置は
膜を均質化するために基材表面の近傍に設けられ
ることが好ましい。このようにして得られた蒸着
膜は酸化マグネシウムおよび水酸化マグネシウム
の微粒子が緻密に混ざりあつて形成されるため極
めて高い防湿効果と透明性を有すると推定され
る。この蒸着膜は上記の反応蒸着法のほか反応性
イオンプレーテイング法によつても形成されえ、
形成された蒸着膜の性能は前者と同等である。 蒸着膜の厚みは、通常、0.01μm〜0.5μmの範
囲に選ばれる。膜厚がこの範囲にあると蒸着膜は
柔軟性を有し、基材との密着性も良好でなる。膜
厚が0.01μm以下であると、一様な連続膜になり
にくい。そのため防湿機能が低下する。0.5μm以
上であると、亀裂や剥離が生じやすくなり防湿機
能が低下する。 実施例 以下に本発明の実施例について説明する。 実施例 1 厚さ90μmの二軸延伸ポリプロピレン(OPP)
の透明フイルムを基材フイルムとして真空槽内に
配置した。槽内をあらかじめ5×10-6トールに排
気したのち、2×10-4トールの酸素ガスおよび水
蒸気を導入し、純度99.9%の金属マグネシウムを
タンタルよりなるボートを使用した抵抗加熱によ
り0.2g/min.の蒸発速度になるよう制御して蒸
着を行つた。このように制御すると蒸発源から30
cmの距離にある基材フイルム上では成膜速度は
0.1μm/min.であり、厚さが約0.2μmの蒸着膜が
得られた。得られたフイルムは透明であつた。こ
のフイルムの透湿度を下表に示す。透湿度はJIS
Z−0208に基づいて試験を行つた。 実施例 2 導入酸素分圧を5×10-4トール、そして導入水
蒸気分圧を1×10-4トールに制御したこと以外は
実施例1と同じである。 実施例 3 導入酸素分圧を8×10-4トール、そして導入水
蒸気分圧を3×10-4トールとしたこと以外は実施
例1と同じである。 比較例 1 水蒸気を系内に導入することなく導入酸素分圧
を8×10-4トールとしたこと以外は実施例1と同
じである。 比較例 2 真空度5×10-5トールで厚さ90μmのOPPフイ
ルム上にSiO2を電子銃加熱により約0.2μmの膜厚
に蒸着した。得られた蒸着フイルムの透湿度を下
表に示す。
Technical Field The present invention relates to a method for forming a transparent thin film having moisture-proof properties;
In particular, the present invention relates to a method for forming a transparent and highly moisture-proof thin film regardless of the type of substrate. BACKGROUND ART Packaging materials, particularly packaging materials used for packaging foods, medicines, chemical products, etc., must have a moisture-proofing function to prevent the contents from deteriorating.
To this end, conventionally, for example, aluminum foil has been bonded to a base plastic film to take advantage of the moisture-proof properties of the aluminum foil. Although the packaging material in this case has excellent moisture resistance, the transparency of the base plastic film is impaired and the contents cannot be seen through. Moreover, since the flexibility is extremely reduced, pinholes may occur. Other examples of packaging materials include vinylidene chloride-based and fluorine-based resin films which themselves have moisture-proof properties. These films must be thick for applications where moisture resistance is strictly required, and various problems arise in the manufacturing process. Attempts have also been made to improve moisture resistance by vacuum-depositing metallic aluminum onto the surface of plastic. However, since the aluminum vapor-deposited film is opaque, when it is used as a packaging material, the contents cannot be seen through. Moreover, since the adhesion strength between the vapor-deposited aluminum and the base film is relatively low, there is a risk of peeling occurring at the interface. In order to improve these drawbacks of conventional packaging materials, for example, Japanese Patent Publication No. 51-48511 proposes a transparent moisture-proof film in which silicon oxide is vapor-deposited on the surface of plastic. However, since silicon oxide dissolves in water, a film deposited with silicon oxide cannot have sufficient moisture-proofing performance. Another drawback is that performance deteriorates over time. JP-A-54-152089 discloses a polyester film on which metals, metal oxides, and silicon oxide are deposited. This vapor-deposited film can exhibit its moisture-proofing performance only when a polyester film is used as the base material. In recent years, EL has been increasingly used in the electronics industry.
A transparent film having a high degree of moisture resistance is increasingly required as a protective film for elements, solar cells, and the like. OBJECT OF THE INVENTION An object of the present invention is to provide a method for forming a transparent thin film having extremely excellent moisture resistance. Another object of the present invention is to provide a method for forming a transparent thin film that has high moisture resistance regardless of the type of substrate. Structure of the Invention The present invention introduces oxygen gas and water vapor into the system and controls them to a predetermined level. This was completed based on the inventor's new finding that Therefore, the thin film forming method of the present invention
A transparent vapor-deposited thin film is formed on a transparent substrate by heating and evaporating metal magnesium while introducing oxygen gas and water vapor into a vacuum chamber, thereby achieving the above object. Examples of transparent plastics used as the base material include polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, polyester, polyvinylidene chloride, nylon, and fluorine resin. However, there is no need to be limited to these. The shape of the base material is not particularly limited either, and may be, for example, a film or a plate, or a lens-shaped plastic molded body. For example, when the base material is a flexible film, the thickness is selected in the range of 5 to 300 μm, preferably 5 to 100 μm. Continuous deposition of films usually requires a winding step through cooling rolls. If the film is too thin, for example less than 5 μm, wrinkles and cracks are likely to occur.
If it is too thick, the film loses its flexibility and continuous winding operation becomes impossible. Magnesium metal is heated and evaporated onto the surface of these transparent substrates while introducing oxygen gas and water vapor to form a transparent thin film of magnesium oxide or magnesium hydroxide. Specifically, the above-mentioned transparent base material is placed in a vacuum chamber, and while the vacuum chamber is evacuated with a vacuum pump,
Metal magnesium is heated by a known heating method such as resistance heating or electron beam heating. Part of the magnesium vapor generated by this heating, water vapor, and oxygen react to form a thin film of magnesium oxide or magnesium hydroxide on the base material. Water vapor makes up most of the residual gas when the tank is evacuated, and this water vapor is also involved in the method of the present invention, but in order to control the water vapor pressure at a constant level, it is preferable to introduce water vapor from the outside. The amount of oxygen gas and water vapor introduced is usually
It is appropriately determined depending on the container of the vacuum chamber, the evacuation capacity of the vacuum pump, the evaporation rate of magnesium metal, etc. The ratio of oxygen gas partial pressure to magnesium evaporation rate is preferably 8×10 −4 to 5×10 −3 torr/(g/min.). 8×10 -4 torr/(g/
min.), the amount of oxygen in the formed magnesium oxide thin film becomes insufficient, resulting in loss of transparency. If it exceeds 5×10 −3 torr/(g/min.), the formed film becomes porous and the moisture proofing property decreases. The ratio of water vapor partial pressure to magnesium evaporation rate is 5
It is preferably ×10 −5 to 2×10 −3 torr/(g/min.). When it is less than 5×10 -5 torr/(g/min.), the particles forming the deposited film become larger and the grains of the deposited film become rougher. As a result, the moisture-proofing effect is reduced. If it exceeds 2×10 -3 torr/(g/min.), the particles will grow too much and the moisture-proofing effect will also decrease. The oxygen gas and water vapor introducing device is preferably provided near the surface of the substrate in order to homogenize the film. The vapor-deposited film thus obtained is estimated to have an extremely high moisture-proofing effect and transparency because it is formed by fine particles of magnesium oxide and magnesium hydroxide being intimately mixed together. This vapor deposited film can be formed not only by the above-mentioned reactive vapor deposition method but also by a reactive ion plating method.
The performance of the deposited film formed is equivalent to the former. The thickness of the deposited film is usually selected in the range of 0.01 μm to 0.5 μm. When the film thickness is within this range, the deposited film has flexibility and good adhesion to the base material. If the film thickness is 0.01 μm or less, it is difficult to form a uniform continuous film. Therefore, the moisture-proofing function decreases. When it is 0.5 μm or more, cracks and peeling tend to occur and the moisture-proofing function decreases. Examples Examples of the present invention will be described below. Example 1 Biaxially oriented polypropylene (OPP) with a thickness of 90 μm
A transparent film was placed in a vacuum chamber as a base film. After the inside of the tank was evacuated to 5×10 -6 Torr, 2×10 -4 Torr of oxygen gas and water vapor were introduced, and metallic magnesium with a purity of 99.9% was heated to 0.2 g/kg by resistance heating using a boat made of tantalum. Vapor deposition was carried out by controlling the evaporation rate to be at a rate of min. With this control, 30
On the base film at a distance of cm, the deposition rate is
0.1 μm/min., and a deposited film with a thickness of about 0.2 μm was obtained. The obtained film was transparent. The moisture permeability of this film is shown in the table below. Moisture permeability is JIS
Tests were conducted based on Z-0208. Example 2 The same as Example 1 except that the introduced oxygen partial pressure was controlled to 5×10 −4 Torr and the introduced water vapor partial pressure was controlled to 1×10 −4 Torr. Example 3 The same as Example 1 except that the introduced oxygen partial pressure was 8×10 −4 Torr and the introduced water vapor partial pressure was 3×10 −4 Torr. Comparative Example 1 The same as Example 1 except that the introduced oxygen partial pressure was 8×10 −4 Torr without introducing water vapor into the system. Comparative Example 2 SiO 2 was deposited to a thickness of about 0.2 μm on a 90 μm thick OPP film at a vacuum degree of 5×10 −5 Torr by electron gun heating. The moisture permeability of the obtained vapor-deposited film is shown in the table below.

【表】 発明の効果 酸素ガスおよび水蒸気を系内に導入しながら形
成される本発明の透明薄膜は、従来に防湿性膜に
比較して防湿性能が飛躍的に向上する。さらに基
材の種類に関係なく透明な薄膜を形成することが
可能である。本発明による透明薄膜は透明性に優
れるため、この薄膜を透明プラスチツクフイルム
に施すと従来にない高度な防湿性能を有する透明
性に優れたフイルムが得られる。このようにフイ
ルムは透明でかつ高防湿性の要求される食品、医
薬品、化学薬品などの包装材および電子工業分野
におけるEL素子や太陽電池の保護膜として最適
である。
[Table] Effects of the Invention The transparent thin film of the present invention, which is formed while introducing oxygen gas and water vapor into the system, has dramatically improved moisture-proofing performance compared to conventional moisture-proofing films. Furthermore, it is possible to form a transparent thin film regardless of the type of substrate. Since the transparent thin film according to the present invention has excellent transparency, when this thin film is applied to a transparent plastic film, a highly transparent film having unprecedented moisture-proofing performance can be obtained. In this way, the film is ideal as a packaging material for foods, pharmaceuticals, chemicals, etc. that requires transparency and high moisture resistance, and as a protective film for EL elements and solar cells in the electronics industry.

Claims (1)

【特許請求の範囲】 1 真空槽内に酸素ガスおよび水蒸気を導入しな
がら金属マグネシウムを加熱し蒸発させることに
より透明な基材上に透明な蒸着薄膜を形成する防
湿性を有する透明薄膜の形成方法。 2 前記基材が可撓性を有するシートまたはフイ
ルムである特許請求の範囲第1項に記載の方法。
[Scope of Claims] 1. A method for forming a transparent thin film having moisture-proof properties, in which a transparent vapor-deposited film is formed on a transparent substrate by heating and evaporating metal magnesium while introducing oxygen gas and water vapor into a vacuum chamber. . 2. The method according to claim 1, wherein the base material is a flexible sheet or film.
JP1666184A 1984-01-30 1984-01-30 Formation of transparent thin film having moisture-proofing effect Granted JPS60159165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1666184A JPS60159165A (en) 1984-01-30 1984-01-30 Formation of transparent thin film having moisture-proofing effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1666184A JPS60159165A (en) 1984-01-30 1984-01-30 Formation of transparent thin film having moisture-proofing effect

Publications (2)

Publication Number Publication Date
JPS60159165A JPS60159165A (en) 1985-08-20
JPH0259867B2 true JPH0259867B2 (en) 1990-12-13

Family

ID=11922516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1666184A Granted JPS60159165A (en) 1984-01-30 1984-01-30 Formation of transparent thin film having moisture-proofing effect

Country Status (1)

Country Link
JP (1) JPS60159165A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109651847A (en) * 2018-12-26 2019-04-19 沈阳三三新材料有限公司 A kind of preparation method of moisture-proof magnesia powder

Also Published As

Publication number Publication date
JPS60159165A (en) 1985-08-20

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