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JPH0262956B2 - - Google Patents
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JPH0262956B2 - - Google Patents

Info

Publication number
JPH0262956B2
JPH0262956B2 JP59042541A JP4254184A JPH0262956B2 JP H0262956 B2 JPH0262956 B2 JP H0262956B2 JP 59042541 A JP59042541 A JP 59042541A JP 4254184 A JP4254184 A JP 4254184A JP H0262956 B2 JPH0262956 B2 JP H0262956B2
Authority
JP
Japan
Prior art keywords
laser diode
optical fiber
diode chip
output optical
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59042541A
Other languages
Japanese (ja)
Other versions
JPS60186081A (en
Inventor
Masahiro Ikeda
Norio Nishi
Shinji Nagaoka
Kaoru Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59042541A priority Critical patent/JPS60186081A/en
Publication of JPS60186081A publication Critical patent/JPS60186081A/en
Publication of JPH0262956B2 publication Critical patent/JPH0262956B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02251Out-coupling of light using optical fibres

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Description

【発明の詳細な説明】 この発明はレーザダイオードチツプ、集光素
子、出力用光フアイバを互に最適な位置に固定す
るレーザダイオードモジユール製造に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the manufacture of a laser diode module in which a laser diode chip, a condensing element, and an output optical fiber are mutually fixed in optimal positions.

<従来技術> 第1図は従来のレーザダイオードモジユールの
構成例を示す。出力用光フアイバ1の結合用端面
は集光用球レンズ2と対向し、集光用球レンズ2
はレーザダイオードチツプ3の活性層と対向して
いる。レーザダイオードチツプ3はヒートシンク
4上に取付けられ、レーザダイオードチツプ3に
電流注入用ワイヤ5が接続されている。これらを
組み立ててレーザダイオードモジユールを製造す
る場合には以下のような手順で行う。まずレーザ
ダイオードチツプ3をヒートシンク4にボンデイ
ングし、電流注入用ワイヤ5をレーザダイオード
チツプ3に取りつけてこれに電流を流し、レーザ
ダイオードチツプ3を発光させる。次に集光用球
レンズ2の光軸を3方向、すなわち互に直交した
x、y、zの各方向に微調することによつてレー
ザダイオードチツプ3の活性層に対し最適位置に
調節する。さらに出力用光フアイバ1の光軸を3
方向に調整することによつてこれら出力用光フア
イバ1、集光用球レンズ2、レーザダイオードチ
ツプ3の光軸を互に一致させ、かつこれらの間隔
が最適になるように、すなわち光出力が出力用光
フアイバ1から最も多く出射されるように調整し
て互に固定する。
<Prior Art> FIG. 1 shows an example of the configuration of a conventional laser diode module. The coupling end face of the output optical fiber 1 faces the condensing ball lens 2, and the condensing ball lens 2
faces the active layer of the laser diode chip 3. The laser diode chip 3 is mounted on a heat sink 4, and a current injection wire 5 is connected to the laser diode chip 3. When assembling these to manufacture a laser diode module, the following steps are performed. First, the laser diode chip 3 is bonded to the heat sink 4, the current injection wire 5 is attached to the laser diode chip 3, and a current is passed through it to cause the laser diode chip 3 to emit light. Next, the optical axis of the condensing ball lens 2 is finely adjusted in three directions, that is, the x, y, and z directions perpendicular to each other, so as to be adjusted to an optimal position relative to the active layer of the laser diode chip 3. Furthermore, the optical axis of output optical fiber 1 is set to 3.
By adjusting the directions, the optical axes of the output optical fiber 1, the condensing ball lens 2, and the laser diode chip 3 are aligned with each other, and the spacing between them is optimized, that is, the optical output is They are adjusted so that the maximum amount of light is emitted from the output optical fiber 1 and fixed to each other.

このように従来においてはレーザダイオードを
発振させた状態での光軸の調整や固定組立を行う
ため、ヒートシンク4を取り付けた状態で調整し
なければならない事や、通電した状態で組立をし
なければならない事等のために信頼性に問題が生
じる事や、製造時の効率が悪い等の欠点があつ
た。つまりレーザダイオードチツプ3はハーメチ
ツクシールをしないで発振させると劣化し、信頼
性が低下するおそれがあり、このため例えば窒素
ガスを流し、その雰囲気で前記調整を行うと、出
力用光フアイバ1、集光用球レンズ2、レーザダ
イオードチツプ3の調節を同時に行うことが困難
となる。
In this way, in the conventional method, the optical axis was adjusted and fixedly assembled while the laser diode was oscillating, so adjustments had to be made with the heat sink 4 attached, and the assembly had to be done with the power turned on. There were drawbacks such as problems with reliability due to failures, and poor manufacturing efficiency. In other words, if the laser diode chip 3 is allowed to oscillate without hermetic sealing, it may deteriorate and its reliability may decrease. , it becomes difficult to adjust the condensing ball lens 2 and the laser diode chip 3 at the same time.

なお、レーザダイオードモジユールの構成法と
しては、第1図に示したように出力用光フアイバ
1と集光用球レンズ2とが分離した別個レンズ方
式と呼ばれる構成のほかに、出力用光フアイバ1
の結合用端面にマイクロレンズ等集光機能をもつ
た素子が設けられている構成が知られている。こ
のような構成法は先端レンズ方式と呼ばれ、例え
ば「光・量子エレクトロニクス研究会資料
OQE76−85」に招介されている。この方法にお
いてもレーザダイオードチツプを発光させた状態
で組立を行うことから生ずる問題点は個別レンズ
方式と共通である。
As for the construction method of the laser diode module, in addition to the so-called separate lens method in which the output optical fiber 1 and the condensing ball lens 2 are separated as shown in FIG. 1
A configuration is known in which an element with a light condensing function, such as a microlens, is provided on the coupling end face. This type of construction method is called the advanced lens method, and for example, "Optical and Quantum Electronics Research Group Materials"
OQE76-85” was invited. This method also has the same problems as the individual lens method, which arise from assembly with the laser diode chip emitting light.

以下の実施例は、先端レンズ方式について説明
するが個別レンズ方式についてもほぼ同様の手順
でレーザダイオードモジユールが製造できる。
In the following embodiments, a tip lens method will be described, but a laser diode module can also be manufactured using an individual lens method using substantially the same procedure.

<発明の概要> この発明の目的はこれらの問題を解決するため
にレーザダイオードチツプを非発光状態のまま
で、出力用光フアイバ、集光素子、レーザダイオ
ードチツプを最適な状態になるように相互に固定
するレーザダイオードモジユールの製造法を提供
することにある。
<Summary of the Invention> In order to solve these problems, the purpose of the present invention is to mutually connect the output optical fiber, the condensing element, and the laser diode chip in an optimal state while the laser diode chip remains in a non-emitting state. An object of the present invention is to provide a method for manufacturing a laser diode module that is fixed to a laser diode module.

この発明によれば出力用光フアイバの出射端か
ら参照光を入射し、その出力用光フアイバの結合
用端面から参照光を非発光状態のレーザダイオー
ドチツプの活性層が現われている端面に照射し、
その端面からの反射光を出力用光フアイバに入射
させ、出力用光フアイバより出射される反射光の
強度を測定して、上記レーザダイオードチツプの
端面構造に依存した屈折率分布により反射光の強
度分布を検出し、これをもとにレーザダイオード
チツプ、出力用光フアイバ、集光素子の各光軸、
これら間の間隔が最適になるように調整する。
According to this invention, the reference light is input from the output end of the output optical fiber, and the reference light is irradiated from the coupling end face of the output optical fiber onto the end face where the active layer of the non-emitting laser diode chip appears. ,
The reflected light from the end face is incident on the output optical fiber, and the intensity of the reflected light emitted from the output optical fiber is measured.The intensity of the reflected light is determined by the refractive index distribution depending on the end face structure of the laser diode chip. The distribution is detected, and based on this, each optical axis of the laser diode chip, output optical fiber, and condensing element is determined.
Adjust the spacing between them to be optimal.

<実施例> 第2図はこの発明の一実施例を説明するための
構成図で示す。光源6からの参照光をハーフミラ
ー7を介して出力用光フアイバ1の出射面に入射
する。この例では先に述べたように先端レンズ方
式にこの発明を適用した場合であり、出力用光フ
アイバ1の結合用端面にはエツチング等で形成さ
れたマイクロレンズ等集光機能を持つた集光素子
8が装着されている。この集光素子8を介して出
力用光フアイバ1からの参照光をレーザダイオー
ド3の活性層が現われている端面に照射する。そ
の反射光を集光素子8を介して出力用光フアイバ
1に結合させ、その反射光はハーフミラ7を介し
てパワーメータ9に入力される。
<Embodiment> FIG. 2 is a configuration diagram for explaining an embodiment of the present invention. Reference light from a light source 6 is incident on the output surface of the output optical fiber 1 via a half mirror 7. In this example, the present invention is applied to the tip lens method as described above, and the coupling end face of the output optical fiber 1 is equipped with a light-condensing device such as a microlens formed by etching or the like. Element 8 is attached. The reference light from the output optical fiber 1 is irradiated through the condensing element 8 onto the end face of the laser diode 3 where the active layer is exposed. The reflected light is coupled to the output optical fiber 1 via the condensing element 8, and the reflected light is input to the power meter 9 via the half mirror 7.

レーザダイオードチツプ3から出射する波長と
同じ波長の光を光源6から出力用光フアイバ1に
入射させ、集光素子8で集光されたビームスポツ
トがレーザダイオードチツプ3の活性層にあたる
ようにレーザダイオードチツプ3を微動させて位
置調整する。ところで屈折率nの媒質に垂直に光
が入射した場合の反射光パワをPとすると、屈折
率に変動Δnがあつた時の反射光パワの変動ΔPは
次のように表わされる。
Light having the same wavelength as that emitted from the laser diode chip 3 is input from the light source 6 to the output optical fiber 1, and the laser diode is connected so that the beam spot focused by the focusing element 8 hits the active layer of the laser diode chip 3. Adjust the position by slightly moving tip 3. By the way, if the reflected light power when light is perpendicularly incident on a medium with a refractive index n is P, then the variation ΔP in the reflected light power when there is a variation Δn in the refractive index is expressed as follows.

ΔP/P=4/n2−1・Δn ………(1) (1)式から屈折率変動に比例して反射光パワが変
動することがわかる。したがつてレーザダイオー
ドチツプ3の活性層とクラツデイング層とに屈折
率の差があれば反射光パワの変動として活性層を
検出することができる。つまりパワーメータ9に
より反射光のレベルを測定してレーザダイオード
チツプ3の端面の構造に依存した屈折率分布にも
とづく反射光の強度分布を検出し、活性層を検出
できる。
ΔP/P=4/n 2 −1·Δn (1) From equation (1), it can be seen that the reflected light power varies in proportion to the variation in the refractive index. Therefore, if there is a difference in refractive index between the active layer and the cladding layer of the laser diode chip 3, the active layer can be detected as a change in the reflected light power. That is, the active layer can be detected by measuring the level of the reflected light using the power meter 9 and detecting the intensity distribution of the reflected light based on the refractive index distribution depending on the structure of the end face of the laser diode chip 3.

第3図はGaAlAs/GaAs系のダブルヘテロ構
造埋込型レーザダイオードの構造を示したもので
ある。第4図は第3図のA−A′線における屈折
率のプロフアイルを示したものである。Nn形の
GaAs基板11上の中央部に形のGa0.6Al0.4Asの
クラツデイング層12が形成され、その上に
GA0.95Al0.05Asの活性層13が形成され、更にそ
の上にP形のGa0.6Al0.4Asのクラツデイング層1
4、p形のGaAs層が順次形成される。これらク
ラツデイング層12、活性層13、クラツデイン
グ層14、GaAs層15の積層部を挟みこれらと
接触して基板11上にn形のGa0.6Al0.4Asのクラ
ツデイング層16,17が形成されている。活性
層13は厚さ0.2μm、幅3μm程度であり、クラツ
デイング層12,14の各厚さは約2.5μmであ
る。この構造での活性層13の屈折率は3.565、
クラツデイング層12,14,16,17の屈折
率は3.32である。したがつて(1)式からΔP/P=
0.084となり、活性層13とクラツデイング層1
2,14との反射光パワの変動は約8%以上とな
る。クラツデイング層12,14及び活性層13
の厚さが約2.5μmと0.2μmで、照射するビームス
ポツトサイズは集光素子8によつて2μm程度以
下とすることができ、よつてビームスポツトをこ
れらクラツデイング層、活性層から外すおそれが
なく、活性層13を反射光パワの最大位置として
検出することができる。なお横方向に対しても活
性層13の屈折率が最大となるので反射光パワの
最大値によつて位置調節することができる。この
ように反射光パワをパワーメータ9により電気信
号に変換し、光軸合わせのフイードバツク制御系
へ組み込めば自動的に光軸合わせを行う事が可能
である。
FIG. 3 shows the structure of a GaAlAs/GaAs double heterostructure buried laser diode. FIG. 4 shows the refractive index profile along line A-A' in FIG. Nn type
A cladding layer 12 of Ga 0.6 Al 0.4 As is formed in the center of the GaAs substrate 11, and a
An active layer 13 of GA 0.95 Al 0.05 As is formed, and a P-type cladding layer 1 of Ga 0.6 Al 0.4 As is formed thereon.
4. P-type GaAs layers are sequentially formed. N-type Ga 0.6 Al 0.4 As cladding layers 16 and 17 are formed on the substrate 11 with the laminated portions of the cladding layer 12, active layer 13, cladding layer 14, and GaAs layer 15 in between and in contact with them. The active layer 13 has a thickness of about 0.2 μm and a width of about 3 μm, and each of the cladding layers 12 and 14 has a thickness of about 2.5 μm. The refractive index of the active layer 13 in this structure is 3.565,
The refractive index of the cladding layers 12, 14, 16, and 17 is 3.32. Therefore, from equation (1), ΔP/P=
0.084, active layer 13 and crazing layer 1
The variation in reflected light power between No. 2 and No. 2 and No. 14 is about 8% or more. Cladding layers 12, 14 and active layer 13
The thickness of the laser beam is approximately 2.5 μm and 0.2 μm, and the size of the irradiated beam spot can be reduced to approximately 2 μm or less by the condensing element 8, so there is no risk of the beam spot being removed from the cladding layer and the active layer. , the active layer 13 can be detected as the position of maximum reflected light power. Note that since the refractive index of the active layer 13 is maximum in the lateral direction as well, the position can be adjusted by the maximum value of the reflected light power. In this way, by converting the reflected light power into an electrical signal using the power meter 9 and incorporating it into a feedback control system for optical axis alignment, it is possible to automatically align the optical axis.

なお先に述べたように第1図に示したような集
光素子を出力用光フアイバ1と離して設ける個別
レンズ方式にもこの発明を適用できる。
As mentioned above, the present invention can also be applied to an individual lens system in which the condensing element is provided separately from the output optical fiber 1 as shown in FIG.

<効果> 以上説明したようにこの発明によれば、レーザ
ダイオードチツプに電流を流さない状態、すなわ
ち非発光の状態で出力用光フアイバとレーザダイ
オードチツプと集光素子との光軸合わせを行うの
で以下のような利点がある。
<Effects> As explained above, according to the present invention, the optical axes of the output optical fiber, the laser diode chip, and the condensing element are aligned in a state in which no current flows through the laser diode chip, that is, in a non-emission state. It has the following advantages.

(1) レーザダイオードチツプが発光により劣化す
るおそれがないから信頼性が上る。
(1) Reliability is improved because there is no risk of the laser diode chip being degraded by light emission.

(2) 変位検出感度が高い (3) 不活性ガス雰囲気中で行う必要がないから光
軸合わせを容易に自動化できる。
(2) High displacement detection sensitivity (3) Optical axis alignment can be easily automated because it does not need to be performed in an inert gas atmosphere.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のレーザダイオードモジユールの
光軸合わせを説明する構成図、第2図はこの発明
のレーザダイオードモジユール製造法の光軸合わ
せを説明する構成図、第3図はレーザダイオード
チツプの構造を示す断面図、第4図は第3図中の
AA線断面の屈折率プロフアイルを示す図であ
る。 1……出力用光フアイバ、2……集光素子とし
ての集光用球レンズ、3……レーザダイオードチ
ツプ、4……ヒートシンク、5……電流注入用ワ
イヤ、6……光源、7……ハーフミラ、8……集
光素子、9……パワメータ、12,14……クラ
ツデイング層、13……活性層。
Fig. 1 is a block diagram illustrating optical axis alignment of a conventional laser diode module, Fig. 2 is a block diagram illustrating optical axis alignment of the laser diode module manufacturing method of the present invention, and Fig. 3 is a block diagram illustrating optical axis alignment of a conventional laser diode module. Figure 4 is a cross-sectional view showing the structure of Figure 3.
FIG. 3 is a diagram showing a refractive index profile of a cross section taken along the AA line. DESCRIPTION OF SYMBOLS 1... Output optical fiber, 2... Condensing ball lens as a condensing element, 3... Laser diode chip, 4... Heat sink, 5... Current injection wire, 6... Light source, 7... Half mirror, 8... Concentrating element, 9... Power meter, 12, 14... Cladding layer, 13... Active layer.

Claims (1)

【特許請求の範囲】[Claims] 1 レーザダイオードチツプの近傍に集光素子を
介して出力用光フアイバの結合用端面を配し、上
記レーザダイオードチツプからの出射光を上記出
力用光フアイバに結合させるようにこれらレーザ
ダイオードチツプ、集光素子、出力用光フアイバ
を互に固定するレーザダイオードモジユールの製
造法において、上記出力用光フアイバの出射端か
ら参照光を入射し、その出力用光フアイバの結合
用端面から上記参照光を非発光状態の上記レーザ
ダイオードチツプの端面に照射し、そのレーザダ
イオードチツプの端面からの反射光を上記出力用
光フアイバに再結合させ、その反射光の、レーザ
ダイオードチツプ端面の構造に依存した屈折率分
布による強度分布を上記出力用光フアイバの出射
端において検出し、上記レーザダイオードチツプ
と出力用光フアイバと集光素子との光軸およびこ
れら間の間隔が最適になるように調整することを
特徴とするレーザダイオードモジユールの製造
法。
1. A coupling end face of an output optical fiber is arranged near the laser diode chip via a condensing element, and these laser diode chips and condensers are arranged so that the output light from the laser diode chip is coupled to the output optical fiber. In a method for manufacturing a laser diode module in which an optical element and an output optical fiber are fixed to each other, a reference light is input from the output end of the output optical fiber, and the reference light is input from the coupling end face of the output optical fiber. The end face of the laser diode chip in a non-emitting state is irradiated, the reflected light from the end face of the laser diode chip is recombined to the output optical fiber, and the reflected light is refracted depending on the structure of the end face of the laser diode chip. The intensity distribution due to the rate distribution is detected at the output end of the output optical fiber, and the optical axes of the laser diode chip, the output optical fiber, and the condensing element and the spacing therebetween are adjusted to be optimal. Features a manufacturing method for laser diode modules.
JP59042541A 1984-03-05 1984-03-05 Manufacture of laser diode module Granted JPS60186081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59042541A JPS60186081A (en) 1984-03-05 1984-03-05 Manufacture of laser diode module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59042541A JPS60186081A (en) 1984-03-05 1984-03-05 Manufacture of laser diode module

Publications (2)

Publication Number Publication Date
JPS60186081A JPS60186081A (en) 1985-09-21
JPH0262956B2 true JPH0262956B2 (en) 1990-12-27

Family

ID=12638922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59042541A Granted JPS60186081A (en) 1984-03-05 1984-03-05 Manufacture of laser diode module

Country Status (1)

Country Link
JP (1) JPS60186081A (en)

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Publication number Priority date Publication date Assignee Title
JPH03266806A (en) * 1990-03-16 1991-11-27 Mitsubishi Electric Corp Production of semiconductor photodetecting device
JP6006681B2 (en) * 2013-05-27 2016-10-12 日本電信電話株式会社 Optical device optical axis adjusting device and optical axis adjusting method

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JPS5710286A (en) * 1980-06-20 1982-01-19 Mitsubishi Electric Corp Assembling of semiconductor device

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