JPH029446B2 - - Google Patents
Info
- Publication number
- JPH029446B2 JPH029446B2 JP57016909A JP1690982A JPH029446B2 JP H029446 B2 JPH029446 B2 JP H029446B2 JP 57016909 A JP57016909 A JP 57016909A JP 1690982 A JP1690982 A JP 1690982A JP H029446 B2 JPH029446 B2 JP H029446B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- heating
- plasma cvd
- heating means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Description
【発明の詳細な説明】
本発明は半導体製造プロセスの薄膜形成工程で
用いられるプラズマCVD装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a plasma CVD apparatus used in a thin film forming step of a semiconductor manufacturing process.
プラズマCVDはデバイスのパツシベーシヨン
膜等を低温で形成する為に用いられる。 Plasma CVD is used to form passivation films for devices at low temperatures.
プラズマCVD装置は、プラズマ発生部、ガス
導入部、真空排気系、治具、電源系、制御系等か
ら構成される。 A plasma CVD device consists of a plasma generation section, a gas introduction section, a vacuum exhaust system, a jig, a power supply system, a control system, etc.
従来の容量結合型プラズマCVDは第１図に示
す如き構成であり、基板電極１と高周波電極２か
ら構成され、図示しない排気系でガス排気口３か
らベルジヤ４内を排気しながら、ガス導入口５よ
りガスを導入し、基板電極１と高周波電極２との
間に高周波を印加し、プラズマを発生させ、基板
電極１上の基板６をヒータ７で加熱しつつ、基板
上に薄膜を形成するものである。 Conventional capacitively coupled plasma CVD has a configuration as shown in Fig. 1, and is composed of a substrate electrode 1 and a high-frequency electrode 2, and while the inside of the bell gear 4 is evacuated from a gas exhaust port 3 by an exhaust system (not shown), the gas inlet is Gas is introduced from 5, a high frequency is applied between the substrate electrode 1 and the high frequency electrode 2, plasma is generated, and a thin film is formed on the substrate while heating the substrate 6 on the substrate electrode 1 with the heater 7. It is something.
ところで従来の方法は基板電極１下部に設けた
ヒータ７で加熱する為、第２図に要部を示す如
く、ウエハの表面温度が下部表面温度より下りウ
エハがそり大きなストレスが生じ、かつウエハ周
辺がヒータより離れるためウエハ内の膜質が一様
でなくなるという欠点があつた。 By the way, in the conventional method, heating is performed using the heater 7 provided at the bottom of the substrate electrode 1. As shown in FIG. Since the wafer is separated from the heater, the film quality within the wafer is not uniform.
本発明は上述の点に鑑みて創作されたもので、
基板の上面下面間の温度勾配を制御することによ
つて基板のそりを制御して、基板上に膜質の良好
な膜を一様に形成するプラズマCVD装置を提供
することを、その目的とするものである。 The present invention was created in view of the above points,
The purpose is to provide a plasma CVD apparatus that controls the warpage of the substrate by controlling the temperature gradient between the upper and lower surfaces of the substrate and uniformly forms a film of good quality on the substrate. It is something.
この目的は、基板を支持する支持電極と、支持
電極に対向する対向電極とを有するプラズマ
CVD装置において、前記支持電極に支持された
基板に支持された基板をその支持電極側から加熱
する第１の加熱手段と、前記基板をその対向電極
側から加熱する第２の加熱手段とを設け、前記の
第１及び第２の加熱手段によつて前記基板のそり
を制御するように加熱して、前記基板上に膜を形
成することを特徴とするプラズマCVD装置によ
つて達成される。 This purpose is to create a plasma that has a supporting electrode that supports the substrate and a counter electrode that faces the supporting electrode.
The CVD apparatus includes a first heating means for heating the substrate supported by the supporting electrode from the supporting electrode side, and a second heating means for heating the substrate from the opposing electrode side. This is achieved by a plasma CVD apparatus characterized in that a film is formed on the substrate by heating the substrate using the first and second heating means so as to control the warpage of the substrate.
第３図は本発明の一実施例である平行平板型プ
ラズマCVD装置の断面図である。 FIG. 3 is a sectional view of a parallel plate type plasma CVD apparatus which is an embodiment of the present invention.
基板６を支持電極側から加熱する第１の加熱手
段としてのヒータ７のほかに、対向電極である高
周波電極２の裏面に、第２の加熱手段として高周
波電極加熱用ヒータ８を設け、このヒータ８によ
つて高周波電極を加熱し、間接的に基板６を対向
電極側から加熱するようにしたものである。ヒー
タ７とヒータ８の出力を調節して、基板６の表面
温度がその下部の温度より低くならないようにす
ると、基板にそりを生じないようにすることがで
きる。 In addition to the heater 7 as a first heating means for heating the substrate 6 from the support electrode side, a heater 8 for heating the high-frequency electrode is provided as a second heating means on the back surface of the high-frequency electrode 2, which is the counter electrode. 8 heats the high frequency electrode, and indirectly heats the substrate 6 from the opposing electrode side. By adjusting the outputs of the heaters 7 and 8 so that the surface temperature of the substrate 6 does not become lower than the temperature below it, it is possible to prevent the substrate from warping.
第４図は本発明の他の実施例で、基板電極１０
の高周波が印加され、対向電極１１がベルジヤ１
２に接続された接地電極となつている。また対向
電極１１はガス導入管１３となつており、電極面
Ａに多数の小孔１１′が設けられ均一なガス供給
を行う。そして、この対向電極１１には、第２の
加熱手段としてのヒータ１４が設けられている。
１５，１６はベルジヤ１２と基板電極１０との絶
縁を行う絶縁物である。 FIG. 4 shows another embodiment of the present invention, in which the substrate electrode 10
high frequency is applied, and the counter electrode 11 is connected to the bell gear 1
It serves as a ground electrode connected to 2. Further, the counter electrode 11 is a gas introduction pipe 13, and a large number of small holes 11' are provided on the electrode surface A to uniformly supply gas. This counter electrode 11 is provided with a heater 14 as a second heating means.
15 and 16 are insulators for insulating the bell gear 12 and the substrate electrode 10.
なおヒータ用の電源には高周波がかからないよ
うに、ヒータ部と電源との接続は高インピーダン
スのコイル等を介して高周波をカツトして行う。 In order to prevent high frequencies from being applied to the power source for the heater, the connection between the heater section and the power source is made by cutting off high frequency waves through a high impedance coil or the like.
本実施例でも、ヒータ７とヒータ１４の出力を
調節することによつて、基板にそりを生じないよ
うにすることができる。また、基板と熱膨張係数
の異なる膜を形成するような場合、基板を室温に
もどしたときにちようど基板が平坦になるよう
に、膜形成の時点ではあらかじめ凹または凸の反
りをつけるようにすることもできる。 In this embodiment as well, by adjusting the outputs of the heaters 7 and 14, it is possible to prevent the substrate from warping. In addition, when forming a film with a coefficient of thermal expansion different from that of the substrate, it is necessary to create a concave or convex warp in advance so that the substrate will be flat when it is returned to room temperature. It can also be done.
本発明によれば、ウエハにそりを生ずることな
くプラズマCVD膜の形成を行うことができ、ウ
エハを装置から取出す時にも否が生じない。 According to the present invention, a plasma CVD film can be formed without warping the wafer, and no defects will occur when the wafer is taken out from the apparatus.
また、ウエハのそりを生ずることもないので、
ウエハ内で膜質を均一化することができ、歩留り
向上に寄与することが大きい。 Also, since the wafer does not warp,
The film quality can be made uniform within the wafer, which greatly contributes to improving yield.
第１図は従来のプラズマCVD装置の断面図、
第２図は従来装置を用いた時の要部断面図、第３
図は本発明のプラズマCVD装置の断面図、第４
図は本発明の他の実施例を示す図である。
１：基板電極、２：対向電極、６：ウエハ、
７，８，１４：ヒータ。
Figure 1 is a cross-sectional view of a conventional plasma CVD device.
Figure 2 is a sectional view of the main parts when using the conventional device, Figure 3
The figure is a cross-sectional view of the plasma CVD apparatus of the present invention.
The figure shows another embodiment of the invention. 1: substrate electrode, 2: counter electrode, 6: wafer,
7, 8, 14: Heater.
Claims (1)
向する対向電極とを有するプラズマCVD装置に
おいて、前記支持電極に支持された基板をその支
持電極側から加熱する第１の加熱手段と、前記基
板をその対向電極側から加熱する第２の加熱手段
とを設け、前記の第１及び第２の加熱手段によつ
て前前記基板のそりを制御するように加熱して、
前記基板上に膜を形成するようにしたことを特徴
とするプラズマCVD装置。1. In a plasma CVD apparatus having a supporting electrode that supports a substrate and a counter electrode that faces the supporting electrode, a first heating means that heats the substrate supported by the supporting electrode from the supporting electrode side; and a second heating means for heating the substrate from the opposing electrode side, and heating the substrate by the first and second heating means to control warping of the substrate,
A plasma CVD apparatus characterized in that a film is formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1690982A JPS58134431A (en) | 1982-02-04 | 1982-02-04 | Plasma chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1690982A JPS58134431A (en) | 1982-02-04 | 1982-02-04 | Plasma chemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58134431A JPS58134431A (en) | 1983-08-10 |
| JPH029446B2 true JPH029446B2 (en) | 1990-03-02 |
Family
ID=11929257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1690982A Granted JPS58134431A (en) | 1982-02-04 | 1982-02-04 | Plasma chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58134431A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182131A (en) * | 1984-02-28 | 1985-09-17 | Sumitomo Electric Ind Ltd | Thin film manufacturing device |
| JPS62165910A (en) * | 1986-01-17 | 1987-07-22 | Hitachi Ltd | semiconductor manufacturing equipment |
| US6222161B1 (en) | 1998-01-12 | 2001-04-24 | Tokyo Electron Limited | Heat treatment apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50748A (en) * | 1973-05-02 | 1975-01-07 | ||
| JPS5559727A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Plasma deposition device |
-
1982
- 1982-02-04 JP JP1690982A patent/JPS58134431A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58134431A (en) | 1983-08-10 |
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