JPH029655B2 - - Google Patents
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- Publication number
- JPH029655B2 JPH029655B2 JP60106024A JP10602485A JPH029655B2 JP H029655 B2 JPH029655 B2 JP H029655B2 JP 60106024 A JP60106024 A JP 60106024A JP 10602485 A JP10602485 A JP 10602485A JP H029655 B2 JPH029655 B2 JP H029655B2
- Authority
- JP
- Japan
- Prior art keywords
- rolling
- shadow mask
- electron beam
- thermal expansion
- beam passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Electrodes For Cathode-Ray Tubes (AREA)
- Heat Treatment Of Steel (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はテレビ用のシヤドウマスク原板等に適
したエツチング性に優れた低熱膨張合金薄板及び
その製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a low thermal expansion alloy thin plate with excellent etching properties suitable for use as a shadow mask original plate for televisions, and a method for manufacturing the same.
〔発明の技術的背景とその問題点〕
近年カラーテレビ受像管の高精細化がすすむに
つれて、エツチング性に優れた低熱膨張合金薄板
をシヤドウマスクに用いることが試みられてい
る。このシヤドウマスクを用いる受像管は通常第
1図にその基本構造を斜視的に示す如く多数の電
子ビーム通過孔を持つたシヤドウマスク1とその
個々の電子ビーム通過孔に対応して形成された三
色螢光面2を有し、電子ビーム通過孔に入射する
電子銃3からの3本の電子ビームのそれぞれの入
射角により色選択を行つている。[Technical Background of the Invention and Problems thereof] In recent years, as color television picture tubes have become more precise, attempts have been made to use low thermal expansion alloy thin plates with excellent etching properties for shadow masks. A picture tube using this shadow mask usually has a shadow mask 1 having a large number of electron beam passage holes, and a tricolor fluorescent lamp formed corresponding to each of the electron beam passage holes, as shown in perspective in FIG. 1. It has a light surface 2, and colors are selected by the respective incident angles of three electron beams from an electron gun 3 that enter an electron beam passage hole.
なお、前記電子ビーム通過孔の形状は、例えば
第2図に断面的に示す如く散乱電子の発生を避け
る様な形状になつている。しかしながら従来技術
では高精細化した際には第2図の如く精度よく、
均一に電子ビーム通過孔を設ける護事は困難であ
り、ドーミング現象と呼ばれる色純度の低下を生
じ易いという欠点があつた。つまり最近はテレビ
画面の「きめの細かさ」に対する一般的要求が高
まり、送信方式が高品位テレビ方式と呼ばれる方
式に変更しつつあり、これに対応して受像管も更
に性能を向上し、電子ビーム通過孔を高密度高精
度化し、ピツチを小さくしたシヤドウマスクが必
要となつていた。 The shape of the electron beam passage hole is such as to avoid the generation of scattered electrons, as shown in cross section in FIG. 2, for example. However, with the conventional technology, when the resolution is increased, the accuracy is high as shown in Figure 2.
It is difficult to uniformly provide electron beam passage holes, and there is a drawback that a decrease in color purity, called a doming phenomenon, is likely to occur. In other words, recently there has been an increase in the general demand for "fine detail" on TV screens, and the transmission method is being changed to a method called high-definition television. There was a need for a shadow mask with high-density, high-precision beam passage holes and small pitch.
このためには熱膨張が小さく、かつ微細で高精
度のエツチングが可能なエツチング性に優れた低
熱膨張合金薄板の開発が望まれていた。 To this end, it has been desired to develop a low thermal expansion alloy thin plate that has low thermal expansion and excellent etching properties that allow fine and highly accurate etching.
本発明は以上の点に鑑み、熱膨張が小さく、か
つエツチング性に優れ微細で高精度のエツチング
が可能な微細なパターン形成が可能なエツチング
性に優れた低熱膨張合金薄板及びその製造方法を
提供する事を目的とするものである。
In view of the above points, the present invention provides a low thermal expansion alloy thin plate that has low thermal expansion and excellent etching properties, and is capable of forming fine patterns that can be etched with fine and high precision, and a method for manufacturing the same. The purpose is to do.
本発明はインバ型合金からなる合金薄板にフオ
トエツチングにより微細なパターンを形成する際
に、その大きさ、形状を全面にわたつて微細でか
つ均一に設ける為には、エツチング速度が全面に
おいて一定にする必要があり、これはエツチング
面の結晶面を特定の結晶面に規定する事により達
成される点に着目したものである。
In the present invention, when forming a fine pattern on a thin alloy plate made of an Invar alloy by photoetching, the etching speed must be kept constant over the entire surface in order to make the size and shape fine and uniform over the entire surface. The present invention focuses on the fact that this can be achieved by defining the crystal plane of the etching surface as a specific crystal plane.
すなわち本発明に係る合金薄板は面心立方格子
構造を有するインバ型合金からなる薄板表面、つ
まりエツチング処理を施す面となる圧延面に
{100}結晶面が35%以上集合したものであり、よ
り好ましくは{100}結晶面を40%以上集合させ
る事が望ましい。 In other words, the thin alloy sheet according to the present invention is one in which 35% or more of {100} crystal planes are aggregated on the surface of the thin sheet made of an Invar alloy having a face-centered cubic lattice structure, that is, on the rolled surface that is the surface to be etched. Preferably, 40% or more of the {100} crystal faces are aggregated.
ここで{100}結晶面が集合している度合とは、
次の様に定義される。即ち、多結晶の個々の粒の
<100>結晶軸方向の、マスク面に垂直方向への
成分を、全ての結晶性について集計した割合で次
の量で定義される。 Here, the degree to which {100} crystal planes are clustered is
It is defined as follows. That is, the component of the <100> crystal axis direction of each polycrystalline grain in the direction perpendicular to the mask surface is defined as the following amount, which is the summed ratio for all crystallinities.
∫〓/2 0Vφcos2dφ −
ここでVφは粒の体積比でφはマスク面垂直方
向と<100>結晶軸とのなす角である。∫〓 /2 0 Vφcos 2 dφ − Here, Vφ is the grain volume ratio, and φ is the angle between the direction perpendicular to the mask surface and the <100> crystal axis.
つまり特にインバ型合金ではエツチング面にお
いて、結晶粒が不揃いになり{100}結晶面の方
向が異なつていると、エツチングされ易い結晶粒
と、されにくい結晶粒との部位でエツチング速度
が著しく異なり、微細な電子ビーム通過孔を高密
度、高精度で得ることが困難となる。 In other words, especially in Invar-type alloys, if the crystal grains are irregular on the etching plane and the direction of the {100} crystal plane is different, the etching rate will be significantly different between the crystal grains that are easily etched and the crystal grains that are difficult to etch. It becomes difficult to obtain fine electron beam passage holes with high density and high precision.
また本発明に係る製造方法は上記の如くエツチ
ング面を{100}結晶面に揃える製造方法である。
まず面心立方格子構造を有するインバ型合金を鍛
造した後、主たる肉厚減少工程である熱間圧延工
程において、圧延面に{100}結晶面が35%以上
集合する。つまり面心立方格子構造を有するイン
バ型合金の場合には肉厚減少工程である熱間圧延
工程において圧延面に{100}結晶面が35%以上
集合する。次に1回圧延率50%以下の冷間加工及
び歪取り熱処理を必要に応じ複数回繰り返し、薄
板を形成する。なお、冷間加工を圧延率50%以
下/1回で行うのは、強加工を施した際、圧延面
の結晶方向が{100}面からずれるのを防止する
為である。また上記の冷間圧延時の圧延率は実用
上10%〜30%とする事が好ましい。 Further, the manufacturing method according to the present invention is a manufacturing method in which the etched plane is aligned with the {100} crystal plane as described above.
First, an Invar-type alloy having a face-centered cubic lattice structure is forged, and then in the hot rolling process, which is the main wall thickness reduction process, 35% or more of {100} crystal planes gather on the rolled surface. In other words, in the case of an Invar alloy having a face-centered cubic lattice structure, 35% or more of {100} crystal planes gather on the rolled surface during the hot rolling process, which is a wall thickness reduction process. Next, cold working at a rolling rate of 50% or less and strain relief heat treatment are repeated multiple times as necessary to form a thin plate. The reason why the cold working is performed at a rolling rate of 50% or less per time is to prevent the crystal direction of the rolled surface from shifting from the {100} plane when strong working is performed. Further, the rolling ratio during the above-mentioned cold rolling is preferably set to 10% to 30% in practical terms.
なお本発明において用いる面心立方格子構造を
有するインバ型合金とは電子ビームの射突による
温度上昇にかかわらず殆んど膨張しないもので、
熱膨張係数が零に近いものほどよく、具体的には
インバ合金(36Ni−Fe)、超不変鋼(32Ni−5Co
−63Fe)、ステンレス不変鋼(54Co−9.5Cr−
36.5Fe)、43Pd−57Fe合金等を用いる事が出来
る。 Note that the Invar type alloy with a face-centered cubic lattice structure used in the present invention is one that hardly expands despite the temperature rise due to the impact of an electron beam.
The closer the thermal expansion coefficient is to zero, the better. Specifically, Invar alloy (36Ni-Fe), super constant steel (32Ni-5Co)
−63Fe), stainless steel (54Co−9.5Cr−
36.5Fe), 43Pd-57Fe alloy, etc. can be used.
また本発明において上記冷間圧延後に施す熱処
理は、歪取焼鈍を行い{100}結晶面の安定化を
図る為のものである。なお所定の冷間圧延及び熱
処理を施して薄板を得る工程において、例えば圧
延率50%以下/1回の冷間圧延を複数回施した
後、最後に熱処理を施してもよいし、また各冷間
圧延後に熱処理を施す操作を複数回繰り返す事も
できる。 Further, in the present invention, the heat treatment performed after the cold rolling is performed to perform strain relief annealing to stabilize the {100} crystal plane. In addition, in the process of obtaining a thin plate by performing predetermined cold rolling and heat treatment, for example, after performing cold rolling multiple times at a rolling rate of 50% or less/one time, heat treatment may be performed at the end, or each cold rolling The operation of applying heat treatment after rolling can also be repeated multiple times.
以下本発明に係るエツチング性に優れた低熱膨
張合金薄板をカラーテレビ用のシヤドウマスク薄
板に用いた実施例を示す。
An example will be shown below in which a low thermal expansion alloy thin plate with excellent etching properties according to the present invention is used as a shadow mask thin plate for a color television.
実施例 1
36%Ni−Feなる成分のインバ合金を溶解し、
その鋳塊を連続熱間製線工程により、半径6mmの
線材とした。の線材を長手方向に直角に鍛造し
(厚さ1mm)、次に900℃の熱間圧延により0.5mm厚
さとした後、圧延率30%の冷間圧延により0.35mm
厚巾の薄板を得、これをロールに巻き取り、熱処
理として真空中で550℃、2時間の歪焼鈍を施し
た。さらにこの薄板を圧延率30%の冷間圧延によ
り0.245mm厚の薄板とした後、同様に歪取焼鈍の
熱処理を施した。この様な冷間圧延及び熱処理の
操作を複数回繰り返し、0.1mm厚の薄板を得た。Example 1 Melting an Invar alloy with a composition of 36% Ni-Fe,
The ingot was made into a wire rod with a radius of 6 mm through a continuous hot wire making process. A wire rod was forged at right angles to the longitudinal direction (thickness: 1 mm), then hot rolled at 900℃ to a thickness of 0.5 mm, and then cold rolled at a rolling rate of 30% to a thickness of 0.35 mm.
A thick thin plate was obtained, wound onto a roll, and subjected to strain annealing in vacuum at 550°C for 2 hours as heat treatment. Further, this thin plate was cold-rolled at a rolling ratio of 30% to form a thin plate with a thickness of 0.245 mm, and then heat-treated for strain relief annealing in the same manner. Such cold rolling and heat treatment operations were repeated several times to obtain a thin plate with a thickness of 0.1 mm.
なお上記工程における熱間圧延後の表面状態を
X線回折を調べたところ、{100}結晶面が40%集
合しており、またその後の冷間圧延、熱処理後に
おいても安定した{100}結晶面が維持されてい
た。 In addition, when examining the surface condition after hot rolling in the above process by X-ray diffraction, it was found that 40% of {100} crystal planes were aggregated, and even after subsequent cold rolling and heat treatment, stable {100} crystals remained. The surface was maintained.
なお集合状態は前述の式にもとづき、
f=∫2〓/0 ∫〓/2/0I(φ,α)sinφcos2φd
φ・dα/∫2〓/0 ∫〓/2/0I(φ,α)sinφdφ・
dα−
(I(φ,α):緯度方向角φ,経度方向角αでの
X線回折強度)
により求めた。 Based on the above formula, the collective state is f=∫ 2 〓/ 0 ∫〓 /2 / 0 I(φ, α) sinφcos 2 φd
φ・dα/∫ 2 〓/ 0 ∫〓 /2 / 0 I (φ, α) sinφdφ・
dα- (I(φ, α): X-ray diffraction intensity at latitude angle φ and longitude angle α).
次に上記の如き方法により得た{100}結晶面
が集合した本発明に係る薄板をシヤドウマスク原
板とし、比較例として同様の熱間圧延を行なつた
後、圧延率80%/1回の冷間圧延及び熱処理を施
したシヤドウマスク原板について、電子ビーム通
過孔を設けるためのエツチング処理を施した場合
の比較を行なつた。なおこの比較例では{110}
結晶面が57%集合しており{100}結晶面は28%
であつた。またエツチングは例えば塩化第1鉄6
%,塩酸0.1%の水溶液を用い、65℃の温度でエ
ツチングを施し、電子ビーム通過孔を設けた。 Next, the thin plate according to the present invention in which the {100} crystal planes were assembled by the method described above was used as a shadow mask original plate, and as a comparative example, the same hot rolling was performed, and then cold rolling was performed at a rolling rate of 80%/1 time. A comparison was made between a shadow mask original plate that had been subjected to rolling and heat treatment and an etching process for providing electron beam passage holes. In this comparative example, {110}
57% of the crystal faces are clustered, and 28% of the {100} crystal faces are
It was hot. In addition, etching can be performed using, for example, ferrous chloride 6.
Etching was performed at a temperature of 65°C using an aqueous solution containing 0.1% and 0.1% hydrochloric acid to form electron beam passage holes.
なお電子ビーム通過孔はシヤドウマスク原板の
両面に順次フオトエツチングを施し、第2図の如
き形状とした。電子ビーム通過孔のピツチは約
0.3mmとし、14型テレビ用シヤドウマスクとして
約52万個の電子ビーム通過孔を形成した。この時
のシヤドウマスク表面における電子ビーム通過孔
を調べ、上記実施例1によるものの大部分拡大平
面図を第3図に、上記比較例によるものの部分拡
大平面図を第4図に示す。なお図中の9は電子ビ
ーム通過孔を示す。 Note that the electron beam passage holes were formed into the shape shown in FIG. 2 by sequentially photoetching on both sides of the shadow mask original plate. The pitch of the electron beam passage hole is approx.
0.3mm, and approximately 520,000 electron beam passage holes were formed as a shadow mask for a 14-inch television. The electron beam passage holes on the surface of the shadow mask at this time were examined, and a mostly enlarged plan view of the mask according to the first embodiment is shown in FIG. 3, and a partially enlarged plan view of the mask according to the comparative example is shown in FIG. Note that 9 in the figure indicates an electron beam passage hole.
この結果から明らかな如く、本発明に係るシヤ
ドウマスク原板を用いたシヤドウマスクでは均一
かつ高精度に電子ビーム通過孔が形成されている
事は明らかである。 As is clear from these results, it is clear that electron beam passage holes are formed uniformly and with high precision in the shadow mask using the shadow mask original plate according to the present invention.
実施例 2
上記実施例1において冷間圧延時の1回の圧延
率を20%とし、他は同様にして{100}結晶面が
42%集合したシヤドウマスク原板を製造した。こ
の場合も実施例1と同様に良好なシヤドウマスク
を得る事ができた。Example 2 In Example 1 above, the rolling ratio at one time during cold rolling was 20%, and the other conditions were the same, so that the {100} crystal plane was
A shadow mask original plate with 42% aggregation was produced. In this case as well, a good shadow mask could be obtained as in Example 1.
実施例 3
上記実施例1と同様の鍛造及び熱間圧延を施
し、0.5mm厚さの薄板を得た後、1回の圧延率8
%程度の冷間圧延を複数回繰り返すいわゆる20段
ロール法を用い、0.1mm厚さ、{100}結晶面が43
%集合したシヤドウマスク原板を得た。Example 3 After obtaining a thin plate with a thickness of 0.5 mm by forging and hot rolling in the same manner as in Example 1, one rolling rate of 8 was applied.
Using the so-called 20-high roll method, which repeats cold rolling several times, the material has a thickness of 0.1 mm and a {100} crystal plane of 43.
% aggregated shadow mask original plate was obtained.
次に550℃、2時間の歪取焼鈍の熱処理を施し
た後、実施例1と同様のフオトエツチングを施し
シヤドウマスクを得た。この結果、第3図と同様
に高精度で均一な電子ビーム通過孔を得る事がで
きた。 Next, a heat treatment of strain relief annealing was performed at 550° C. for 2 hours, and then photoetching was performed in the same manner as in Example 1 to obtain a shadow mask. As a result, it was possible to obtain a highly accurate and uniform electron beam passage hole as shown in FIG.
以上の結果から明らかな如く、本発明の製造方
法を用いることにより、表面に{100}結晶面が
集合したエツチング性に優れた低熱膨張合金薄板
を得る事ができ、この薄板フオトエツチングによ
り微細孔を高密度、高精度でかつ均一に設ける事
ができる。この結果、本発明をシヤドウマスク原
板に用いた場合従来に比べピツチ巾を約1/3とす
る事ができ、電子ビーム通過孔の数を5倍程度ま
で増加させる事が可能となり、また低熱膨張であ
るため、ドーミング現象等のない高品位のものが
得られる。
As is clear from the above results, by using the manufacturing method of the present invention, it is possible to obtain a low thermal expansion alloy thin plate with excellent etching properties in which {100} crystal planes are assembled on the surface, and by photo-etching this thin plate, fine pores can be formed. can be provided uniformly with high density and precision. As a result, when the present invention is used for a shadow mask original plate, the pitch width can be reduced to about 1/3 compared to the conventional one, the number of electron beam passing holes can be increased by about 5 times, and it has low thermal expansion. Therefore, a high quality product without doming phenomenon etc. can be obtained.
第1図はシヤドウマスク管の原理を示す斜視
図、第2図は電子ビーム通過孔の形状例を示す断
面図、第3図は本発明に係るシヤドウマスクを示
す部分拡大平面図、第4図は従来のシヤドウマス
クを示す部分拡大平面図である。
1……シヤドウマスク、9……電子ビーム通過
孔。
Fig. 1 is a perspective view showing the principle of a shadow mask tube, Fig. 2 is a sectional view showing an example of the shape of an electron beam passage hole, Fig. 3 is a partially enlarged plan view showing a shadow mask according to the present invention, and Fig. 4 is a conventional one. FIG. 3 is a partially enlarged plan view showing the shadow mask of FIG. 1...Shadow mask, 9...Electron beam passage hole.
Claims (1)
造後、熱間圧延を施し圧延面に{100}結晶面が
35%以上集合させる工程と、圧延率が50%/1回
を超えない冷間圧延および歪取り熱処理を施す工
程とを具備した事を特徴とするエツチング性に優
れた低熱膨張合金薄板の製造方法。 2 面心立方格子構造を有するインバ型金型から
なる薄板表面に{100}結晶面が35%以上集合し
た事を特徴とするエツチング性に優れた低熱膨張
合金薄板。[Claims] 1. After forging an Invar type alloy having a face-centered cubic lattice structure, hot rolling is performed so that {100} crystal planes are formed on the rolled surface.
A method for producing a low thermal expansion alloy thin plate with excellent etching properties, comprising a step of aggregating 35% or more, and a step of cold rolling at a rolling rate not exceeding 50%/time and heat treatment for strain relief. . 2. A low thermal expansion alloy thin sheet with excellent etching properties, characterized by a collection of 35% or more {100} crystal planes on the surface of the thin sheet formed by an invar-type mold having a face-centered cubic lattice structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10602485A JPS6119737A (en) | 1985-05-20 | 1985-05-20 | Shadow mask base plate and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10602485A JPS6119737A (en) | 1985-05-20 | 1985-05-20 | Shadow mask base plate and its preparation |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57147740A Division JPS5932859B2 (en) | 1982-08-27 | 1982-08-27 | Shadow mask and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6119737A JPS6119737A (en) | 1986-01-28 |
| JPH029655B2 true JPH029655B2 (en) | 1990-03-02 |
Family
ID=14423071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10602485A Granted JPS6119737A (en) | 1985-05-20 | 1985-05-20 | Shadow mask base plate and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6119737A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2554623B2 (en) * | 1986-03-31 | 1996-11-13 | 株式会社東芝 | Shed mask |
| JPH0778270B2 (en) * | 1988-08-19 | 1995-08-23 | 日本冶金工業株式会社 | Method for producing Fe-Ni based alloy excellent in streak unevenness suppressing effect during etching |
| DE69207482T2 (en) * | 1991-05-30 | 1996-05-30 | Hitachi Metals Ltd | Perforated mask material with high sharpness and process for its production |
| JP2723718B2 (en) * | 1991-09-27 | 1998-03-09 | ヤマハ株式会社 | Fe-Ni-Co alloy for shadow mask |
| EP0561120B1 (en) * | 1992-01-24 | 1996-06-12 | Nkk Corporation | Thin Fe-Ni alloy sheet for shadow mask and method for manufacturing thereof |
| US5456771A (en) * | 1992-01-24 | 1995-10-10 | Nkk Corporation | Thin Fe-Ni alloy sheet for shadow mask |
| US5562783A (en) * | 1992-01-24 | 1996-10-08 | Nkk Corporation | Alloy sheet for shadow mask |
| US5620535A (en) * | 1992-01-24 | 1997-04-15 | Nkk Corporation | Alloy sheet for shadow mask |
| US5453138A (en) * | 1992-02-28 | 1995-09-26 | Nkk Corporation | Alloy sheet |
| KR100418813B1 (en) * | 1996-11-08 | 2004-04-29 | 엘지마이크론 주식회사 | Method for fabricating material of shadow mask |
| JP2002038239A (en) * | 2000-07-24 | 2002-02-06 | Yamaha Metanikusu Kk | Magnetostriction controlled alloy sheet, component for color cathode ray tube using the same, and method of manufacturing magnetostriction controlled alloy sheet |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5932859A (en) * | 1982-08-19 | 1984-02-22 | Toshiba Corp | Ion selectivity electrode device |
-
1985
- 1985-05-20 JP JP10602485A patent/JPS6119737A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6119737A (en) | 1986-01-28 |
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