JPH0310237B2 - - Google Patents

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor integrated circuits, and in particular, to a method that allows two or more high-frequency circuits to be mounted on one semiconductor pellet without deteriorating the separation between the circuits. This is related to things that have been done in this way.

[Conventional technology]

Conventionally, in semiconductor integrated circuits, when two or more circuits are mounted on one pellet, even when handling high frequency signals, no consideration has been given to the signal frequency applied to the internal circuit. The circuit arrangement was the same regardless of whether the voltage was high or low, resulting in poor separation between the circuits. Also, because the circuit requirements are not satisfied due to poor separation, it is not possible to create multiple circuits with large gains, and only one circuit with small gains is required.
It could not be loaded into pellets.

[Problem that the invention seeks to solve]

Conventional semiconductor integrated circuits are configured as described above, and although they are equipped with circuits that pass high signal frequencies, no consideration has been given to this, resulting in poor separation between circuits.
Therefore, it has been impossible to integrate two or more circuits with large gains and handle high frequencies into a single chip IC.

The present invention has been made to solve the above-mentioned problems, and its object is to provide a semiconductor integrated circuit that can mount a plurality of high-frequency circuits on one chip while maintaining separation between the circuits.

[Means for solving problems]

In the semiconductor integrated circuit according to the present invention, a circuit resistant to interference is provided between high-frequency circuits, or wiring areas such as low-impedance power supply lines and ground lines are run between the high-frequency circuits.

[Effect]

In this invention, a low-impedance wiring area is provided between each high-frequency circuit and a circuit that is not susceptible to interference by the high-frequency circuit or around each high-frequency circuit. As the distance increases, the signals flying between the circuits are attenuated, and if a low-impedance wiring area is provided, the signals flying between the high-frequency circuits fall into the wiring area, which reduces the effect on the high-frequency circuits. .

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a semiconductor integrated circuit according to an embodiment of the present invention. In the figure, 1 is a substrate on which an electric circuit is mounted or embedded. Currently, silicon (Si), gallium arsenide (GaAs) is used as the substrate material. Since semiconductors such as these are often used, they are called semiconductor pellets. Further, 2 to 9 are terminals called bonding pads for inputting and outputting signals from internal circuits A to G.
5 is a terminal for a positive voltage power supply or a negative voltage power supply of the electric circuits C, A, and B; 6 and 7 are signal input terminals of the electric circuit D; and 8 and 9 are signal input terminals of the electric circuit E.
Note that 2 is a bonding pad connected to internal circuits A to G other than 3 to 9.

Also, A is a high frequency amplification circuit, which includes amplification circuits E and G, and B is a high frequency amplification circuit, which includes amplification circuits D and F.
This is a circuit that includes

Further, FIG. 2 shows a semiconductor integrated circuit according to another embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 1 indicate the same parts. 10 and 11 are positive voltage power supply terminals or negative voltage power supply terminals of the amplifier circuit D. That is, in the one shown in FIG. 1, the power to circuits D and F is supplied through terminal 5, but in the one shown in FIG. It is supplied via terminal 5. Note that H and I are low impedance wiring areas that connect the circuits D and E and the terminals 10 and 11.

Next, the effects will be explained.

A diversity circuit is one in which two or more series of transmitting amplifier circuits or receiving amplifier circuits are provided as shown in Fig. 1, and the two series A and B must exhibit the same electrical characteristics. Generally, both circuits A and B are constructed from the same circuit.

For example, a case will be explained in which circuits A and B are receiving amplifier circuits. It is assumed that two antennas a and b (not shown) are connected, and a signal received by antenna a is amplified by circuits E and G, and a signal received by antenna b is amplified by circuits D and F. Here, since the receiving amplifier circuits A and B are circuits from which the larger output is taken out by the control circuit, the circuit A,
B needs to exhibit approximately the same electrical characteristics, so circuits A and B need to be arranged symmetrically. However, since these circuits A and B handle a high frequency and have a large circuit gain, if both circuits A and B are mounted on the same semiconductor pellet as they are, the signal on the A line will be transferred to the B line, and the signal on the B line will be transferred to the A line. There is a possibility that it will fly to. For this reason, in this embodiment, a circuit that is less affected by the signals on the A and B lines, such as the above-mentioned control circuit C that controls which line is selected, is provided between the circuits A and B. , B to prevent mutual interference between circuits A and B. This allows two high-gain high-frequency amplification circuits with the same function to be installed on the same chip while maintaining separation between the circuits. It can now be mounted on top.

Although the above embodiment shows a diversity circuit in which a control circuit is provided between the amplifier circuits, it is also possible to provide a low impedance wiring area with a fixed potential, such as a power supply line and an earth line, around each amplifier circuit. Since the signals flying between circuits A and B fall into the wiring area, the same effect as in the above embodiment can be achieved.

Further, in the above embodiment, high frequency amplifier circuits A and B
are shown as consisting of amplifier circuits E, G and amplifier circuits D, F, respectively, but the high frequency amplifier circuit may also include a mixer circuit, a frequency discrimination circuit, etc.
The same effects as in the above embodiment are achieved.

In addition, as shown in Fig. 2, circuits D and F are surrounded by fixed potential lines (wiring areas) 10 and 11, such as low impedance power supply circuits, to prevent the signal from circuit D from jumping to circuit C. Interference between circuits D and F and between circuits E and G may be prevented by preventing the signal from circuit D from passing to circuit F.

Further, although the above embodiment shows a diversity circuit for a receiver, it is also possible to mount a plurality of high frequency circuits having the same function on the same chip, such as a diversity circuit for a transmitter. It has the same effect as.

Furthermore, multiple high-frequency circuits with different functions,
Of course, it is also possible to install them on the same chip.

〔Effect of the invention〕

As described above, according to the semiconductor integrated circuit of the present invention, a circuit resistant to interference is provided between a plurality of high frequency circuits having the same function, or a low impedance wiring area is provided around each high frequency circuit. Therefore, what used to be composed of two or more integrated circuits can now be made into a single integrated circuit, and at the same time, since high-frequency circuits are mounted on the same substrate, the electrical characteristics of each circuit can be reduced. This has the effect of allowing a good match to be obtained.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a semiconductor integrated circuit according to one embodiment of the present invention, and FIG. 2 is a diagram showing another embodiment of the present invention in which interference is reduced by running low-impedance wiring between circuits. . In the figure, 1 is a semiconductor pellet, A and B are high-frequency amplifier circuits, D, E, F, and G are amplifier circuits (circuits that make up the amplifier circuit), C is a control circuit (a circuit that is resistant to interference), and H and I are This is the wiring area.

Claims (1)

[Claims] 1. A plurality of high-frequency circuits having the same function are mounted on the same chip, and a circuit resistant to interference is provided between each high-frequency circuit, or a low-impedance wiring area such as a ground or power line is connected to each high-frequency circuit. A semiconductor integrated circuit characterized by being provided around the circuit. 2. The above-mentioned high-frequency circuit is an amplification circuit of a diversity circuit consisting of a mixer circuit, a high-frequency amplification circuit, a frequency discrimination circuit, etc., and the above-mentioned interference-resistant circuit controls the diversity circuit to select the one with a larger output from among the amplification circuits. The semiconductor integrated circuit according to claim 1, which is a circuit. 3. The semiconductor integrated circuit according to claim 2, wherein a low impedance wiring region is provided around a circuit constituting the amplifier circuit.