JPH0311775B2 - - Google Patents
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- Publication number
- JPH0311775B2 JPH0311775B2 JP59106008A JP10600884A JPH0311775B2 JP H0311775 B2 JPH0311775 B2 JP H0311775B2 JP 59106008 A JP59106008 A JP 59106008A JP 10600884 A JP10600884 A JP 10600884A JP H0311775 B2 JPH0311775 B2 JP H0311775B2
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- chamber
- sic
- resistance heating
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は歯科用合金、ガラス、ガラスセラミツ
ク母材などの鋳造用ガラス素材の溶融や鋳造ある
いはメタルボンドポーセレン義歯の焼成等に適用
される加熱装置に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention is a heating method applied to melting and casting of glass materials for casting such as dental alloys, glass, and glass-ceramic base materials, or firing of metal-bonded porcelain dentures. Regarding equipment.
(従来の技術)
近時、義歯材料としての歯科用合金は従来のプ
レシアスメタル(Au合金)から貴金属類の価格
の高騰の影響を受けてセミプレシアスメタル
(Pd−Agその他のPd合金)さらにノンプレシア
スメタル(Ni−Cr、Co−Cr系合金等)に移行し
ているが、これらのうち、特にノンプレシアスメ
タルは溶融温度が非常に高く(1200〜1550℃)そ
のうえ、酸化し易いので、従来の加熱方式では高
周波誘導加熱もしくはアーク放電加熱が主として
用いられているが、前者は表皮効果でもつてワー
ク表面上から熱が発生するため、表面が本来溶解
に必要な温度より高い加熱状態となつて合金成分
の一部が気化喪失して合金の特性が損なわれてし
まう。しかも温度分布が一様でないが故にワーク
の温度検出が不正確となり、それにもとづく温度
コントロールも不適当なものとなる欠点がある。
また、後者においてもワークにおけるアーク発生
点のみが部分的に高温となるので、前者と同様の
欠点を生ずることとなる。(Prior art) In recent years, dental alloys used as denture materials have changed from conventional precious metals (Au alloys) to semi-precious metals (Pd-Ag and other Pd alloys) due to the rising prices of precious metals. Furthermore, there is a shift to non-precious metals (Ni-Cr, Co-Cr alloys, etc.), but among these, non-precious metals in particular have extremely high melting temperatures (1200 to 1550°C) and are susceptible to oxidation. Conventional heating methods mainly use high-frequency induction heating or arc discharge heating because they are easy to use. However, with the former, heat is generated from the surface of the workpiece due to the skin effect, so the surface is heated to a higher temperature than originally required for melting. As a result, some of the alloy components are vaporized and lost, and the properties of the alloy are impaired. Moreover, since the temperature distribution is not uniform, the temperature of the workpiece cannot be detected accurately, and the temperature control based on the temperature cannot be properly controlled.
Further, in the latter case, only the arc generation point on the workpiece becomes partially high temperature, resulting in the same drawback as the former case.
他方、Pd−Ag系、その他のAg含有合金を義歯
基体とし、その上に陶材(ポーセレン)を築盛し
てメタルポーセレン複合義歯を得る場合に用いる
ポーセレン焼付け炉では温度上昇に伴なつてAg
合金が酸化して黄色酸化物(Ag2O)を生成し、
これが築盛陶材を黄変させるので、一般にはその
予防策として炉内にカーボン材を収納して還元性
雰囲気を形成させていた。 On the other hand, in the porcelain baking furnace used to obtain a metal-porcelain composite denture by building up porcelain on a denture base made of Pd-Ag or other Ag-containing alloys, Ag increases as the temperature increases.
The alloy oxidizes to form a yellow oxide (Ag 2 O),
Since this causes yellowing of the built-up porcelain, generally, as a preventive measure, a carbon material is stored in the furnace to create a reducing atmosphere.
(発明が解決しようとする問題点)
本発明は以上に鑑み、還元性雰囲気下で高温加
熱の必要な歯科用材料の焼成用或は溶解・鋳造用
加熱装置であつて、偏つた加熱がなくて温度検
出・制御が容易且つ酸化物を形成しない装置を提
供するにある。(Problems to be Solved by the Invention) In view of the above, the present invention is a heating device for firing, melting, and casting dental materials that require high-temperature heating in a reducing atmosphere, and that eliminates uneven heating. It is an object of the present invention to provide a device which can easily detect and control temperature and which does not form oxides.
(問題点を解決するための手段)
上記目的は概して発熱手段としてワークを周方
向に囲繞するSiC抵抗発熱体を用いることによつ
て達成される。このSiC抵抗発熱体は密閉チヤン
バ内にあつて減圧により酸素密度が低減させた状
態で通電下に発熱することによりSiC+3/2O2
→SiO2+COの酸化反応を生起して酸素量を減少
させるとともに発生するCOによりチヤンバ内を
還元性雰囲気に維持してワークの酸化を防止する
と共にワークを囲繞下にジユール発熱による加熱
をワーク全面にほゞ均一に付与することにより温
度検出・制御が容易となる結果をもたらす。本発
明装置は、従つて、歯科用合金材料のうち、とく
にノンプレシアスメタルの溶解、鋳造、銀含有合
金基のメタル、ボンドポーセレンの焼成用或はガ
ラスの鋳造用(ポーセレン焼付炉)としてはもち
ろん、本出願人が特願昭58−246548をもつて提供
した溶解及び気体による圧力鋳造を兼用した鋳造
装置にも適用性を持つている。(Means for Solving the Problem) The above object is generally achieved by using a SiC resistance heating element that circumferentially surrounds the workpiece as a heating means. This SiC resistance heating element is placed in a sealed chamber and generates heat when energized while oxygen density is reduced due to reduced pressure, resulting in SiC+3/2O 2
→The oxidation reaction of SiO 2 +CO occurs to reduce the amount of oxygen, and the generated CO maintains a reducing atmosphere in the chamber to prevent oxidation of the workpiece, and heats the entire surface of the workpiece by Joule heat surrounding the workpiece. By applying it almost uniformly, temperature detection and control become easier. Therefore, the apparatus of the present invention is suitable for melting and casting non-precious metals among dental alloy materials, firing silver-containing alloy-based metals, bonded porcelain, and casting glass (porcelain baking furnace). Of course, the present invention is also applicable to a casting apparatus which combines melting and gas pressure casting, which was provided by the present applicant in Japanese Patent Application No. 58-246548.
以下に本発明の構成を上記鋳造装置に応用した
図面を採つて更に詳述するに;
図に於て、第1図は本発明装置を含む鋳造装置
の一実施例を示す縦断正面図、第2図は本発明で
用いるSiC抵抗発熱体の一実施例を示す斜視図、
第3図は別の実施例のSiC抵抗発熱体の斜視図、
第4図は更に別の実施例のSiC抵抗発熱体の斜視
図、第5図は更にまた別の実施例のSiC抵抗発熱
体の斜視図である。 The configuration of the present invention will be explained in more detail below with reference to drawings in which the configuration of the present invention is applied to the above-mentioned casting device; In the drawings, FIG. Figure 2 is a perspective view showing an example of the SiC resistance heating element used in the present invention;
FIG. 3 is a perspective view of another example of a SiC resistance heating element.
FIG. 4 is a perspective view of a SiC resistance heating element of yet another embodiment, and FIG. 5 is a perspective view of a SiC resistance heating element of still another embodiment.
先づ、本発明で用いるSiC抵抗発熱体2につい
て述べると、第2図のものはヘリカルスロツト
型、第3図のものはストレートスロツト型、第4
図のものはマルチコラム型のものを夫々示してい
るが、第2図のものはSiC焼結体よりなる円筒本
体20に図示の如く垂直スロツト210′,21
0′を含む夫々一連のヘリカルスロツト210を
長手方向に穿設してこの本体20の上部に於て電
気的に互いに絶縁分離された半体200,20
0′に割分すると共に導電ターミナル半円体26,
26′を両者間に絶縁チツプ260,260′を介
挿して、上記半体200,200′を結束嵌帽し、
一方半体200,200′の下部は上記ヘリカル
スロツト210によつて絶縁区分される一組のヘ
リカルリング201,201′が長手方向につい
て交互に配置され、且つ夫々201,201′の
終端に於て両者が結合201″し合うようにした
もので、この結果一方の半体200に通電する
と、その電流がヘリカルリング210を経てヘリ
カルリング201′から他方の半体200′に通電
し得るようになつている(なお、電流の経路を矢
印にて示してある)。この通電によつて面積の狭
いヘリカルリング201,201′にジユール発
熱が集中して発熱部21を形成する。発熱温度範
囲は一例として500〜1800℃に亘る。別の実施例
を示す第3図に於ては垂直なストレートスロツト
220をSiC焼結体よりなる一個の円筒本体20
に多数割設し、本体20の上下に導電ターミナル
リング26,26′を着嵌したもので、この場合
はスロツト220によつて区分された直状パス2
02が発熱部21を形成する。第4図の実施例で
は上下の導電ターミナル兼サポートリング26″,
26″間に垂直方向の多数のSiC焼結体ロツド2
03が円周方向に植設保持されてこれらロツド2
03自体が発熱部21を形成する。第5図に示し
た実施例に於ては、両端に導電ターミナル26
,26を備えたSiC焼結体ロツド204……
の複数本を上下互いに井桁状に組格積層し、上下
ロツド204……間に絶縁支持座(不図示)をも
つてこの間を電気絶縁してこれらロツド204の
中央近傍の発熱部分、即ち上記井桁状組格部20
5が図外の溶融ルツボを囲繞し得るようになした
ものである。 First, regarding the SiC resistance heating element 2 used in the present invention, the one in Figure 2 is a helical slot type, the one in Figure 3 is a straight slot type, and the one in Figure 4 is a straight slot type.
The ones in the figure each show a multi-column type, but the one in FIG.
The halves 200, 20 are electrically insulated and separated from each other in the upper part of the main body 20 by forming a series of helical slots 210 in the longitudinal direction.
0' and conductive terminal semicircular body 26,
Insulating chips 260, 260' are inserted between the two halves 26', and the halves 200, 200' are tied together,
On the other hand, in the lower part of the halves 200, 200', a pair of helical rings 201, 201' insulated by the helical slot 210 are arranged alternately in the longitudinal direction, and at the ends of the helical rings 201, 201', respectively. As a result, when one half 200 is energized, the current can be passed through the helical ring 210 from the helical ring 201' to the other half 200'. (Note that the current path is indicated by an arrow). Due to this energization, the Joule heat is concentrated in the narrow helical rings 201, 201', forming the heat generating part 21. The heat generation temperature range is As an example, the temperature ranges from 500 to 1800° C. In FIG.
The conductive terminal rings 26 and 26' are fitted into the upper and lower parts of the main body 20. In this case, the straight path 2 divided by the slot 220 is
02 forms the heat generating part 21. In the embodiment shown in Fig. 4, upper and lower conductive terminal/support rings 26'',
A large number of vertical SiC sintered rods 2 between 26"
03 are implanted and held in the circumferential direction, and these rods 2
03 itself forms the heat generating part 21. In the embodiment shown in FIG. 5, conductive terminals 26 are provided at both ends.
, 26...
The upper and lower rods 204 are stacked one above the other in a grid pattern, and an insulating support seat (not shown) is provided between the upper and lower rods 204 to electrically insulate the space between them. Shape structure part 20
5 surrounds a melting crucible (not shown).
かく構成したこの実施例のSiC抵抗発熱体2は
第4図のように発熱体ロツドを垂直に設けたもの
と比較し垂直方向の温度分布がルツボとの近傍の
みに集中出来るため鋳型431部分を比較的低温
に保持する必要がある場合に好適であり、しかも
ルツボと鋳型431との距離を小さくするメリツ
トが付加される。 The SiC resistance heating element 2 of this embodiment constructed in this way allows the temperature distribution in the vertical direction to be concentrated only in the vicinity of the crucible, compared to the one in which the heating element rods are installed vertically as shown in FIG. This is suitable when it is necessary to maintain the crucible at a relatively low temperature, and it has the added advantage of reducing the distance between the crucible and the mold 431.
これと共に各ロツド204……は剛直的な支持
部分がなく単に上下積層関係で組込まれているた
めにロツド204……の熱応力にもとづくヒビ、
割れ、破損を発生する可能性も著減される。この
ようなSiC抵抗発熱2は一般の密閉チヤンバ1
内、更に望ましくは酸素密度を下げるために減圧
自在な(図例のものは気体による圧力鋳造のため
加圧自在ともなつている)密閉チヤンバ1内に納
置され、その発熱部21の有効加熱ゾーンl内に
ワーク(図例では溶融ルツボ3上の歯科用合金材
料6)が配置されている。発熱体2の上部開口部
内には、中央貫通孔191及び発熱部21内の温
度を検知する熱電対23を貫通保持した断熱栓蓋
19が封栓され、中央貫通孔191は断熱手段7
2の上部のチヤンバ内腔24に開通している。発
熱体2の下端は断熱手段71を載架保持するリン
グサポート25にて保持され、チヤンバ1の上端
開口部には止ねじ27によつて蓋28が止着され
るが、この蓋28の中央には透視用窓孔281が
貫設され、止ねじ29によつて透視窓板30を保
持した窓縁部材31が止ねじ32によつて取付け
られている。 In addition, since each rod 204... has no rigid support part and is simply assembled in a stacked relationship, the rods 204... may crack due to thermal stress.
The possibility of cracking and breakage is also significantly reduced. This kind of SiC resistance heating 2 is similar to the general sealed chamber 1.
More preferably, the chamber 1 is housed in a sealed chamber 1 that can be freely depressurized to lower the oxygen density (the example shown is also pressurizable because it is pressure cast with gas), and the heat generating part 21 is effectively heated. A workpiece (in the illustrated example, a dental alloy material 6 on a melting crucible 3) is placed in zone l. The upper opening of the heating element 2 is sealed with a central through hole 191 and a heat insulating stopper lid 19 which holds a thermocouple 23 for detecting the temperature inside the heat generating part 21 through the central through hole 191 .
It opens into the upper chamber lumen 24 of 2. The lower end of the heating element 2 is held by a ring support 25 that holds the heat insulating means 71, and a lid 28 is fixed to the upper end opening of the chamber 1 with a set screw 27. A viewing window hole 281 is provided through the window, and a window edge member 31 holding a viewing window plate 30 with a set screw 29 is attached with a set screw 32.
即ち、SiC抵抗発熱体2の交換に当つてはチヤ
ンバ1の密閉蓋28を明けて発熱体2の上部に栓
合してある栓蓋19を抜栓してから発熱体2を器
外に取出しその逆の作業により新しいSiC抵抗発
熱体2をチヤンバ1内に再セツトする。導管8は
図外の排気装置に接続されている。溶融ルツボ3
内で加熱溶融された溶融物は、密閉チヤンバ1内
と鋳型4内との間に実質的な差圧がない場合は、
その表面張力によつて受口311内に保持されて
いるが、該チヤンバ1内を加圧することによつて
この溶融物を湯口5から鋳型4内に圧力鋳造する
ようになつている。第2図におけるその他の構成
部材の詳細は先願の明細書の内容によつて詳細に
開示されており、またその多くは本発明の作用・
効果とは直接的に関与しないのでこゝでは重複を
避ける意味で割愛する。但し、上記各構成部材の
うち先願のものと重複するものは非連続的ではあ
るが、先願のものに合致し得るよう同一符号を用
いた。 That is, when replacing the SiC resistance heating element 2, open the sealing lid 28 of the chamber 1, unplug the stopper lid 19 fitted to the top of the heating element 2, and then take the heating element 2 out of the device. Reset the new SiC resistance heating element 2 into the chamber 1 by performing the reverse operation. The conduit 8 is connected to an exhaust device (not shown). Melting crucible 3
If there is no substantial pressure difference between the inside of the closed chamber 1 and the inside of the mold 4,
It is held in the socket 311 by its surface tension, and by pressurizing the chamber 1, the molten material is pressure cast from the sprue 5 into the mold 4. The details of the other constituent members in FIG.
Since it is not directly related to the effect, it is omitted here to avoid duplication. However, among the above-mentioned constituent members, those that overlap with those of the earlier application are discontinuous, but the same reference numerals are used so as to match those of the earlier application.
(作用)
本装置の使用に際しては導管8よりチヤンバ1
内の空気を抜いて該チヤンバ1内の酸素密度を低
減させた状態で且つ新しい酸素(即ち、こゝでは
空気)の供給を断つた状態でSiC抵抗発熱体2に
通電して発熱させる。発熱体2の表面は加熱によ
つて酸化物SiC+3/2O2→SiO2+COの反応から
チヤンバ1内にCOガスを放出する。しかしチヤ
ンバ1内には新しい空気の供給がないので、上記
反応の進行によつてチヤンバ1内の酸素密度は更
に低減する一方、発熱部位のSiCはSiO2に順位変
質してSiC量は順次低減し、この現象はSiC抵抗
発熱体2の表面上に白色のSiO2膜が形成される
ことによつて確認され得る。図例のように密閉チ
ヤンバ1内を減圧自在としてある場合は、通電発
熱に先がけて酸素密度を低減させておくことが望
ましい。実施例装置の場合はルツボ3内のワーク
6が溶融した後、導管8から空気をチヤンバ1内
に導入してその圧力によつて溶融物を下方の鋳型
4内に圧力鋳造するため、鋳造が終つた段階では
チヤンバ1内の酸素密度が極端にあがるが、その
際は発熱体2の発熱は停止しており且つ溶融物は
加熱を受けていない鋳型4内に注入されてしまつ
ているので酸化される度合は小さい。例図の場
合、1回毎の加熱・鋳造の後、チヤンバ1内は前
記範囲の減圧度に再セツトされ、次の加熱・鋳造
に供せられる。鋳造を伴わない単なる加熱のみの
場合は加熱工程終了後、チヤンバ1内を大気と連
通させることによつて大気雰囲気とし続いて同じ
ように減圧下に再セツトする。一例としてSiC抵
抗発熱体2を従来のポーセレン炉の加熱手段とし
てAg系合金ベースポーセレン(築盛)クラウン
の複合義歯焼成・ステイニング・グレージング・
デイギヤシングに供した所Ag2Oの形成は全くみ
られず、従つて、ポーセレンクラウン部に黄変が
発生することはなかつた。第2図〜第4図の3つ
の実施例構造のSiC抵抗発熱体2のいづれの場合
もワークはその周方向に囲繞されている発熱部2
1により、とりわけ加熱温度分布のうち特に高く
均一な値を示す有効加熱ゾーンl内にあることに
より、ワーク6は全体がほゞ均一に効率よく加熱
されるから、加熱部の温度検知、例えば第1図の
熱電材23による検知は容易且つ正確に行われ、
従つてこの検知と連係する温度制御も適性に実施
される。なお、第1図に示した実施例では抵抗発
熱体2を縦方向に配置した例をあげたが、これに
限らず適宜横方向に配置したものであつてもよい
ことは言うまでもない。(Function) When using this device, connect chamber 1 to conduit 8.
With the air removed from the chamber 1 to reduce the oxygen density within the chamber 1 and with the supply of fresh oxygen (that is, air here) cut off, electricity is applied to the SiC resistance heating element 2 to generate heat. When the surface of the heating element 2 is heated, CO gas is released into the chamber 1 through a reaction of oxide SiC+3/2O 2 →SiO 2 +CO. However, since there is no fresh air supplied to chamber 1, as the above reaction progresses, the oxygen density in chamber 1 further decreases, while the SiC in the heat generating area changes to SiO 2 and the amount of SiC gradually decreases. However, this phenomenon can be confirmed by the formation of a white SiO 2 film on the surface of the SiC resistance heating element 2. When the pressure inside the sealed chamber 1 can be reduced as shown in the example shown in the figure, it is desirable to reduce the oxygen density prior to energization and heat generation. In the case of the apparatus of the embodiment, after the workpiece 6 in the crucible 3 is melted, air is introduced into the chamber 1 from the conduit 8 and the molten material is pressure cast into the mold 4 below by the pressure, so that the casting is performed. At the final stage, the oxygen density in the chamber 1 increases extremely, but at that time the heat generation of the heating element 2 has stopped and the molten material has been poured into the mold 4 which has not been heated, so oxidation does not occur. The degree to which this occurs is small. In the case of the example shown in the figure, after each heating and casting, the inside of the chamber 1 is reset to the degree of vacuum within the above range, and is used for the next heating and casting. In the case of mere heating without casting, after the heating process is completed, the inside of the chamber 1 is brought into communication with the atmosphere to create an atmospheric atmosphere, and then the chamber 1 is reset to a reduced pressure in the same manner. For example, the SiC resistance heating element 2 can be used as a heating means in a conventional porcelain furnace to perform composite denture firing, staining, and glazing of Ag-based alloy-based porcelain (build-up) crowns.
When subjected to day gearing, no formation of Ag 2 O was observed, and therefore no yellowing occurred in the porcelain crown. In all of the SiC resistance heating elements 2 having the three embodiment structures shown in FIGS. 2 to 4, the workpiece is surrounded by the heating section 2 in the circumferential direction.
1, the entire workpiece 6 is heated almost uniformly and efficiently because it is located within the effective heating zone l that exhibits a particularly high and uniform value in the heating temperature distribution. Detection using the thermoelectric material 23 shown in FIG. 1 is easily and accurately performed,
Therefore, temperature control associated with this detection is also appropriately performed. In the embodiment shown in FIG. 1, an example was given in which the resistance heating elements 2 were arranged in the vertical direction, but it goes without saying that the resistance heating elements 2 are not limited to this and may be arranged in the horizontal direction as appropriate.
(実施例)
(実施例 1)
(i) 発熱体:
第2図のヘリカルスロツト型SiC抵抗発熱体
(ii) チヤンバ内の減圧度:
5×10-1torr
(iii) ワーク:
92%Ni−6%Cr系合金のノンプレシアスメタ
ル3g
(iv) 加熱温度:
1380℃、3分間
(v) ワーク溶融物の性状:
上記ワークは受口内でワンビートとなつて溶融
した。(Example) (Example 1) (i) Heating element: Helical slot type SiC resistance heating element shown in Fig. 2 (ii) Degree of vacuum in the chamber: 5 × 10 -1 torr (iii) Workpiece: 92% Ni -3 g of non-precious metal of 6% Cr alloy (iv) Heating temperature: 1380°C, 3 minutes (v) Properties of melted workpiece: The workpiece melted in one beat in the socket.
(vi) 加熱の使途:
第1図の溶融及び気体による圧力鋳造
(実施例 2)
(i) 発熱体:
第3図のストレートスロツト型SiC抵抗発熱体
(ii) チヤンバ内の減圧度:
100torr
(iii) ワーク:
28%Ag−60%Pd合金で鋳造したコーピングベ
ース上にポーセレンを厚み1.5mmに築盛した複合
義歯
(iv) 焼成工程:
600℃→950℃、50℃/min
(v) ワークの性状:
義歯基体のAg−Pd合金の酸化によるポーセレ
ンの黄変は皆無であつた。(vi) Application of heating: Melting and pressure casting using gas as shown in Figure 1 (Example 2) (i) Heating element: Straight slot type SiC resistance heating element as shown in Figure 3 (ii) Degree of vacuum in the chamber: 100 torr (iii) Workpiece: Composite denture with porcelain built up to a thickness of 1.5mm on a coping base cast from 28%Ag-60%Pd alloy (iv) Firing process: 600℃→950℃, 50℃/min (v) Workpiece Properties: There was no yellowing of the porcelain due to oxidation of the Ag-Pd alloy of the denture base.
(vi) 加熱の使途:
焼成・ステイニング・グレージング・デイギヤ
シング
(発明の効果)
叙述の説明によつて既に理解されたように、本
発明装置によればSiC抵抗発熱体を用いて減圧自
在な密閉チヤンバ内でワークを加熱処理するため
に、その際生成するCOによる還元性雰囲気によ
つて高温加熱がありながら材料(ワーク)の実質
的な酸化防止が可能となり、別途の酸化防止手段
(例えば、還元剤であるカーボン材料)を併用す
ることなく、とりわけ歯科用材料であるノンプレ
シヤスメタル・セミプレシヤスメタル・ポーセレ
ン及びガラスセラミツクス等の高温時における酸
化に起因した黄変や強度劣化、組成変化、気泡の
残留、鋳型内への不完全充填等が発生しない。ま
た、不活性ガスの導入が不要となり、装置の簡略
化に役立ち、ワークに対する加熱も、その周囲全
体からの加熱によるものであることから、温度の
検知、制御が容易となるなど多くの優れた効果を
発揮する。(vi) Applications of heating: firing, staining, glazing, day gearing (effects of the invention) As already understood from the above description, the device of the present invention uses a SiC resistance heating element to create a hermetic seal that can freely reduce pressure. Because the workpiece is heat-treated in the chamber, it is possible to substantially prevent oxidation of the material (workpiece) even though the material (workpiece) is heated at a high temperature due to the reducing atmosphere created by the CO generated during the heat treatment, and separate oxidation prevention measures (e.g. Yellowing, strength deterioration, and composition changes caused by oxidation at high temperatures, especially dental materials such as non-precious metals, semi-precious metals, porcelain, and glass ceramics, without using carbon materials (reducing agents) , no residual air bubbles, no incomplete filling into the mold, etc. In addition, it eliminates the need to introduce inert gas, which helps simplify the equipment, and since the workpiece is heated from the entire surrounding area, temperature detection and control become easier. be effective.
なお、SiC抵抗発熱体が使用に伴い消耗が進行
した場合には適時新品と交換すればよい。 Note that if the SiC resistance heating element becomes worn out with use, it may be replaced with a new one at a timely manner.
第1図は本発明装置を含む鋳造装置の一実施例
を示す縦断正面図、第2図は本発明で用いるSiC
抵抗発熱体の一実施例を示す斜視図、第3図は別
の実施例のSiC抵抗発熱体の斜視図、第4図は更
に別の実施例のSiC抵抗発熱体の斜視図、第5図
は別の実施例のSiC抵抗発熱体の斜視図である。
符号の説明、1……密閉チヤンバ、2……SiC
抵抗発熱体、6……ワーク、l……有効加熱ゾー
ン。
Fig. 1 is a longitudinal sectional front view showing an embodiment of a casting device including the device of the present invention, and Fig. 2 is a SiC used in the present invention.
FIG. 3 is a perspective view of an SiC resistance heating element according to another embodiment; FIG. 4 is a perspective view of a SiC resistance heating element according to another embodiment; FIG. 5 FIG. 2 is a perspective view of another example of a SiC resistance heating element. Explanation of symbols, 1... Sealed chamber, 2... SiC
Resistance heating element, 6...Work, l...Effective heating zone.
Claims (1)
抵抗発熱素子と、この発熱素子内に設置された溶
融ルツボと、当該発熱素子の有効加熱ゾーン内に
ある上記溶融ルツボに設けられたワークとを含
み、前記SiC抵抗発熱素子はその発熱部が上記溶
融ルツボを周方向に囲繞して成り、これによつて
前記密閉チヤンバを減圧に保持して酸素密度を低
減させた状態で、上記発熱素子に通電することに
より当該発熱素子からCOガスを発生させて該チ
ヤンバ内を還元性雰囲気に保つて前記ワークを加
熱せしめる如くなした歯科用加熱装置。1 SiC stored in a sealed chamber that can be depressurized
The SiC resistance heating element includes a resistance heating element, a melting crucible installed in the heating element, and a workpiece installed in the melting crucible within the effective heating zone of the heating element, and the SiC resistance heating element has a heat generating part as described above. The melting crucible is surrounded in the circumferential direction, and CO gas is generated from the heating element by energizing the heating element while the sealed chamber is maintained at a reduced pressure and the oxygen density is reduced. A dental heating device configured to heat the work while maintaining a reducing atmosphere in the chamber.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59106008A JPS60249948A (en) | 1984-05-24 | 1984-05-24 | Dental heating apparatus |
| US06/686,292 US4597431A (en) | 1983-12-28 | 1984-12-26 | Melting and pressure casting device |
| DE19843447672 DE3447672A1 (en) | 1983-12-28 | 1984-12-28 | MELTING AND DIE CASTING DEVICE |
| GB08432747A GB2153722B (en) | 1983-12-28 | 1984-12-28 | Melting and pressure casting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59106008A JPS60249948A (en) | 1984-05-24 | 1984-05-24 | Dental heating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60249948A JPS60249948A (en) | 1985-12-10 |
| JPH0311775B2 true JPH0311775B2 (en) | 1991-02-18 |
Family
ID=14422645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59106008A Granted JPS60249948A (en) | 1983-12-28 | 1984-05-24 | Dental heating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60249948A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT16335U3 (en) * | 2019-02-27 | 2019-12-15 | Amann Girrbach Ag | sintering furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2319245A1 (en) * | 1975-07-24 | 1977-02-18 | Thomson Csf | PERFECTED TRANSDUCER FOR SURFACE WAVE FILTER WITH ASYMMETRICAL TRANSFER FUNCTION AND FILTER CONTAINING SUCH A TRANSDUCER |
| JPS5457393A (en) * | 1977-10-14 | 1979-05-09 | Daiei Shika Sangiyou Kk | Method of melting cast metal |
-
1984
- 1984-05-24 JP JP59106008A patent/JPS60249948A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60249948A (en) | 1985-12-10 |
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