JPH0317238B2 - - Google Patents
Info
- Publication number
- JPH0317238B2 JPH0317238B2 JP59081864A JP8186484A JPH0317238B2 JP H0317238 B2 JPH0317238 B2 JP H0317238B2 JP 59081864 A JP59081864 A JP 59081864A JP 8186484 A JP8186484 A JP 8186484A JP H0317238 B2 JPH0317238 B2 JP H0317238B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- mounting
- brazing material
- resin
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、樹脂封止型半導体装置の実装方法に
関し、該半導体装置を実装して形成される電子機
器の信頼性向上に適用して有効な技術に関するも
のである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a method for mounting a resin-sealed semiconductor device, and relates to a technique that is effective when applied to improve the reliability of electronic equipment formed by mounting the semiconductor device. It is something.
半導体装置を実装する方法としては、該装置の
外部端子を基板上の電極部に半田等のろう材で固
定することが行なわれている。
A method for mounting a semiconductor device is to fix the external terminal of the device to an electrode portion on a substrate using a brazing material such as solder.
その際、ろう材を溶融する方法として、温風ま
たは赤外線照射等を利用し、半導体装置全体をろ
う材の融点以上に加熱するやり方がある。 At this time, as a method of melting the brazing material, there is a method of heating the entire semiconductor device to a temperature higher than the melting point of the brazing material using hot air or infrared irradiation.
ところで、半導体装置のうち樹脂封止型半導体
装置は、その構成材料の物性の相違からもともと
パツケージクラツク、たとえば樹脂部分に亀裂が
発生したり、樹脂とリードの界面に間隙が生じた
りし易いという性質を有しており、製品完成後に
おいても該クラツクから水分等の腐食物質がパツ
ケージ内部へ侵入していき電気系統部を腐食する
ことにより、結果として導通不良等が生じ易いと
いう問題があると考えられるものである。 By the way, among semiconductor devices, resin-sealed semiconductor devices are inherently prone to package cracks, such as cracks in the resin part or gaps at the interface between the resin and the leads, due to differences in the physical properties of their constituent materials. Even after the product is completed, corrosive substances such as moisture can enter the inside of the package from the crack and corrode the electrical system, resulting in poor continuity. It is something that can be considered.
したがつて、前記半導体装置の信頼性向上のた
めには、極力前記パツケージクラツクの発生を防
止する必要がある。 Therefore, in order to improve the reliability of the semiconductor device, it is necessary to prevent the occurrence of package cracks as much as possible.
ところが、半導体装置を樹脂モールドしてパツ
ケージングを行なつた後においても、熱的影響を
被る種々の工程があり、これら工程も前記パツケ
ージクラツク発生の大きな原因になつている。 However, even after the semiconductor device is resin-molded and packaged, there are various steps that are affected by heat, and these steps are also a major cause of the occurrence of package cracks.
なかでも樹脂モールド後のパツケージのエイジ
ング工程や最前の半導体装置のろう付実装工程等
が非常に高温度に装置全体をさらすことになるた
め、最もパツケージクラツクが発生し易い工程で
あると考えられる。 Among these, the aging process of the package after resin molding and the brazing mounting process of the semiconductor device, which is the first step, are considered to be the processes most likely to cause package cracks, as the entire device is exposed to extremely high temperatures. .
そして、半導体装置全体を、たとえば赤外線照
射により加熱してろう材を溶融し実装する場合
は、通常、パツケージを構成している樹脂が黒色
であるためパツケージ部がリード部よりかなり高
温に熱せられていることが本発明者により明らか
にされた。それ故、半導体装置を構成する材料の
熱膨張率等の物性差に起因する熱衝撃によるパツ
ケージクラツク発生が、前記実装方法を採用する
場合に特に重要な問題となることが本発明者によ
り見い出された。 When mounting the entire semiconductor device by heating it with infrared rays to melt the brazing material, the package part is usually heated to a much higher temperature than the lead parts because the resin that makes up the package is black. The present inventor has clarified that there is a Therefore, the present inventor has found that the occurrence of package cracks due to thermal shock caused by differences in physical properties such as thermal expansion coefficients of the materials constituting the semiconductor device becomes a particularly important problem when the above-mentioned mounting method is adopted. It was.
さらに、前記のごとく半導体装置全体が高温度
にさらされ実装工程等においては、単に構成材料
の熱膨張率等の物性の相違だけでなく、パツケー
ジ内に取り込まれている微量の水分等の低沸点物
質が気化し、さらに該物質の蒸気が熱膨張するこ
とによる、いわば気化に伴なう体積衝撃が前記パ
ツケージクラツクの発生の大きな原因になつてい
る事実をも本発明者が見い出した。 Furthermore, as mentioned above, the entire semiconductor device is exposed to high temperatures during the mounting process, etc., and in addition to differences in the physical properties such as the coefficient of thermal expansion of the constituent materials, there is also a problem with the low boiling point of trace amounts of moisture incorporated into the package. The present inventor has also discovered that the so-called volumetric impact accompanying vaporization, which is caused by the vaporization of a substance and the thermal expansion of the vapor of the substance, is a major cause of the occurrence of the package crack.
そして、前記のパツケージ内に存在する水分等
の低沸点物質は、モールド後のパツケージであつ
てもエイジング前であればある程度存在している
場合もあり、エイジング後においても、外部リー
ドをめつき処理する場合には直接水と接触するこ
とになるため、水が樹脂部を直接浸透して行つた
り、長時間空気中に放置する場合は、空気中の水
分が徐々にパツケージ内に浸透していつたりもす
るものである。それは、樹脂には完全な気密性が
ないことが原因である。 The low-boiling point substances such as water present in the package may still exist to some extent even in the package after molding before aging, and even after aging, the external leads cannot be plated. If the product is left in the air for a long time, the water in the air may gradually seep into the inside of the package. It's also something that makes you feel tired. This is because resin is not completely airtight.
以上事実より、前記実装工程におけるパツケー
ジクラツク発生の問題は、樹脂封止型半導体装置
の中でも水分が浸透し易く、かつ樹脂強度が低く
なる薄型パツケージ、小型パツケージ、さらには
小型薄型パツケージからなる半導体装置において
特に重大であることが本発明者により見い出され
た。 From the above facts, the problem of package cracks occurring in the mounting process can be seen in thin packages, small packages, and even semiconductors made of small and thin packages, where moisture easily penetrates and the resin strength is low, even among resin-sealed semiconductor devices. It has been found by the inventors to be of particular importance in devices.
本発明の目的は、樹脂封止型半導体装置の実装
に関し、該半導体装置を実装してなる電子機器の
信頼性向上に適用して有効な技術を提供するもの
である。
An object of the present invention is to provide an effective technique for mounting a resin-sealed semiconductor device, which can be applied to improve the reliability of electronic equipment in which the semiconductor device is mounted.
本発明の前記ならびにその他の目的と新規な特
徴は、本明細書の記述および添付図面から明らか
になるであろう。 The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なも
のの概要を簡単に説明すれば、次の通りである。
A brief overview of typical inventions disclosed in this application is as follows.
すなわち、ろう材を介して樹脂封止型半導体装
置の外部リードを実装基板に接続する樹脂封止型
半導体装置の実装方法において、前記樹脂封止型
半導体装置を前記実装基板に配置する前に、前記
樹脂封止型半導体装置全体を乾燥するために、前
記ろう材の溶融温度より低い温度の雰囲気中で前
記樹脂封止型半導体装置を加熱処理する半導体装
置の予備乾燥工程と、しかる後、前記予備乾燥さ
れた半導体装置を前記ろう材を介して前記実装基
板に配置し、前記予備乾燥された半導体装置、前
記実装基板及び該実装基板上のろう材を全体的に
前記ろう材の溶融温度以上の温度の雰囲気中にさ
らすことによつて前記ろう材を溶融させ、前記予
備乾燥された半導体装置の外部リードを前記実装
基板に接続するろう材溶融工程とを経て実装する
ことにより、該溶融工程においてパツケージが高
温度に加熱される場合であつても、低沸点物質の
気化が原因となるパツケージクラツクの発生を防
止することができることより、前記目的を達成す
るものである。 That is, in a mounting method for a resin-sealed semiconductor device in which external leads of a resin-sealed semiconductor device are connected to a mounting board via a brazing material, before placing the resin-sealed semiconductor device on the mounting board, a pre-drying step for the resin-sealed semiconductor device in which the resin-sealed semiconductor device is heat-treated in an atmosphere at a temperature lower than the melting temperature of the brazing material in order to dry the entire resin-sealed semiconductor device; A pre-dried semiconductor device is placed on the mounting board via the brazing material, and the pre-dried semiconductor device, the mounting board, and the brazing material on the mounting board are heated to a temperature higher than the melting temperature of the brazing material as a whole. The soldering material is melted by exposing it to an atmosphere at a temperature of Even when the package is heated to a high temperature in the process, it is possible to prevent the occurrence of package cracks caused by vaporization of low boiling point substances, thereby achieving the above object.
また、ろう材の溶融工程における加熱手段とし
て電磁波照射を採用し樹脂封止型半導体装置をろ
う付実装するに際し、電磁波照射を受ける方向の
パツケージ面に電磁波反射板を取り付けることに
より、ろう材溶融時においてもパツケージ部の昇
温を抑制することができるため、熱衝撃によるパ
ツケージクラツクの発生を抑制できることより、
前記目的を達成するものである。 In addition, when electromagnetic wave irradiation is used as a heating means in the brazing metal melting process and resin-sealed semiconductor devices are brazed and mounted, an electromagnetic wave reflecting plate is attached to the package surface in the direction receiving the electromagnetic wave irradiation. Since it is possible to suppress the temperature rise of the package part even in the case of heat transfer, it is possible to suppress the occurrence of package cracks due to thermal shock.
This achieves the above objective.
本発明による実施例1は樹脂封止型半導体装置
の実装方法に関するものである。
Embodiment 1 of the present invention relates to a method for mounting a resin-sealed semiconductor device.
本実施例1の実装方法は、完成された樹脂封止
型半導体装置をろう材の一つである半田を用いて
基板に実装する場合に、半田溶融工程前に半導体
装置を半田溶融温度より低い温度、たとえば100
〜150℃で樹脂型半導体装置が充分乾燥されるに
足る時間、場合によつては減圧状態で加熱処理を
施しパツケージ樹脂部の予備乾燥を行なうことに
特徴があるものである。 In the mounting method of Example 1, when a completed resin-sealed semiconductor device is mounted on a board using solder, which is one of the brazing materials, the semiconductor device is heated to a temperature lower than the solder melting temperature before the solder melting process. temperature, for example 100
This method is characterized in that the resin part of the package is pre-dried by heat treatment at ~150 DEG C. for a sufficient time to dry the resin-type semiconductor device, and in some cases under reduced pressure.
さらに、極めて有効な具体的条件としては、温
度が125℃±5℃、圧力が1〜5mmHg、時間とし
て5〜10時間を提示することができる。この条件
で半導体装置を予備乾燥を行なつた後、230℃〜
250℃に加熱し半田を溶融することにより基板に
実装した場合は、パツケージクラツクを大巾に減
少させることができるものである。 Further, extremely effective specific conditions include a temperature of 125° C.±5° C., a pressure of 1 to 5 mmHg, and a time of 5 to 10 hours. After pre-drying the semiconductor device under these conditions,
When mounted on a board by heating it to 250°C and melting the solder, package cracks can be greatly reduced.
このような実装方法に適した加熱手段としては
温風加熱、赤外線加熱等の半導体装置全体を半田
溶融温度以上の高温にさらす、いかなる手段をも
採用することができるものである。それ故、いか
なるタイプの樹脂封止型半導体装置についても適
用して有効な方法である。 As a heating means suitable for such a mounting method, any means that exposes the entire semiconductor device to a high temperature higher than the solder melting temperature, such as hot air heating or infrared heating, can be employed. Therefore, it is an effective method that can be applied to any type of resin-sealed semiconductor device.
なお、半導体装置が前記予備乾燥工程を経るこ
とにより、パツケージ樹脂内部に取り込まれてい
る水分等の低沸点物質を穏やかな条件で除去する
ことができることより、その後の半田溶融工程に
おいてさらに高温に加熱された場合にも、水分等
の蒸気による影響を避けることができるものであ
る。 Note that when the semiconductor device goes through the pre-drying process, low-boiling substances such as moisture trapped inside the package resin can be removed under mild conditions, so that it can be heated to a higher temperature in the subsequent solder melting process. It is possible to avoid the effects of moisture and other vapors even when exposed to water.
さらに、このような実装方法によれば、レンジ
ICなどの半導体装置自体の複数もしくは多数を
一括して予備乾燥処理できるので、予備乾燥のた
めに占有体積の小さい比較的に簡単な設備で所期
の目的を達成することができ、また必要に応じて
減圧状態とし、より完全な予備乾燥を容易に達成
することができる。 Furthermore, according to this implementation method, the range
Since multiple or large numbers of semiconductor devices such as ICs can be pre-dryed at once, it is possible to achieve the desired purpose with relatively simple equipment that occupies a small volume for pre-drying. Depending on the situation, a reduced pressure can be applied to easily achieve more complete pre-drying.
(1) 樹脂封止型半導体装置を装置全体を加熱して
ろう材を溶融することにより基板に実装する方
法において、ろう材溶融工程前にパツケージを
予備乾燥することにより、パツケージ内に存在
する水分等の低沸点物質を予め除去せしめるこ
とができるので、その後高温に加熱してろう材
を溶融せしめる場合であつてもパツケージクラ
ツクの発生を有効に防止することができる。
(1) In a method of mounting a resin-sealed semiconductor device on a board by heating the entire device and melting the brazing material, the moisture present in the package is removed by pre-drying the package before the brazing material melting process. Since low boiling point substances such as the like can be removed in advance, it is possible to effectively prevent the occurrence of package cracks even when the brazing filler metal is subsequently heated to a high temperature to melt it.
(2) 前記(1)により、半導体装置の信頼性を向上さ
せることができる。(2) According to (1) above, the reliability of the semiconductor device can be improved.
(3) 予備乾燥を100〜150℃で行なうことにより、
穏やかにかつ効率よく低沸点物質を揮散させる
ことができる。(3) By performing preliminary drying at 100-150℃,
Low boiling point substances can be evaporated gently and efficiently.
(4) 予備乾燥を減圧下で行なうことにより、単に
加熱する場合に比べ、一段と効率よくパツケー
ジの乾燥を行なうことができる。(4) By performing preliminary drying under reduced pressure, packages can be dried more efficiently than when simply heating.
(5) 薄型パツケージからなる半導体装置は、パツ
ケージ内部にまで水分等が浸透し易いので、予
備乾燥は特に効果がある。(5) Pre-drying is particularly effective for semiconductor devices made of thin packages, as moisture and the like can easily penetrate into the inside of the package.
(6) ろう材として半田を使用することにより、本
実装方法を適用して、信頼性の高い安価な半導
体装置を提供することができる。(6) By using solder as a brazing material, the present mounting method can be applied to provide a highly reliable and inexpensive semiconductor device.
(7) 半導体装置が小型パツケージで形成されてい
る場合は、内部リードの埋設部が短かいので、
該内部リードとパツケージ樹脂との界面を伝つ
て水分等が侵入し易いので、本実装方法を適用
するに特に適した半導体装置である。(7) If the semiconductor device is formed in a small package, the buried part of the internal lead is short, so
This semiconductor device is particularly suitable to which this mounting method is applied, since moisture and the like are likely to enter through the interface between the internal leads and the package resin.
(8) 前記(1)と(7)より、非常に信頼性の高い電子機
器を提供することができる。(8) From (1) and (7) above, it is possible to provide an extremely reliable electronic device.
(9) フラツトパツケージからなる半導体装置を実
装してなる電子機器については、前記(5)より極
めて信頼性の高いものを提供することができ
る。(9) As for electronic equipment mounted with a semiconductor device made of a flat package, it is possible to provide an electronic device with extremely high reliability compared to the above (5).
(10) プリント基板をパツケージ本体と同様に黒色
化することにより、赤外線吸収率をパツケージ
と同程度に出来、半田付時の熱効率をあげられ
る。(10) By making the printed circuit board black like the package body, the infrared absorption rate can be made to be on the same level as the package, increasing thermal efficiency during soldering.
以上本発明者によつてなされた発明を実施例に
基づき具体的に説明したが、本発明は前記実施例
に限定されるものではなく、その要旨を逸脱しな
い範囲で種々変更可能であることはいうまでもな
い。 Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples described above, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say.
たとえば、実施例においては、具体的なパツケ
ージ形態については説明しなかつたが、半導体装
置全体を加熱してろう付実装を行なうものであれ
ば、ソケツト実装されるものまたは面付実装され
るもの等、いかなるものであつても適用できるも
のである。 For example, although specific package forms were not explained in the embodiments, if the entire semiconductor device is heated and soldered, it may be socket-mounted or surface-mounted. , it can be applied to anything.
また、予備乾燥の条件は実施例に示したものに
限るものではないことは言うまでもない。 Furthermore, it goes without saying that the pre-drying conditions are not limited to those shown in the Examples.
以上の説明では主として本発明によつてなされ
た発明をその背景となつた利用分野である樹脂封
止型半導体装置の実装方法に適用した場合につい
て説明したが、それに限定されるものではなく、
たとえば、エイジング等のパツケージモールド後
に高温加熱処理を施こす工程であればいかなるも
のに適用して有用な技術に関するものである。
The above explanation has mainly been about the case where the invention made by the present invention is applied to the mounting method of a resin-sealed semiconductor device, which is the background field of application, but the invention is not limited thereto.
For example, the present invention relates to a technique that can be applied to any process in which high-temperature heat treatment is performed after package molding, such as aging.
Claims (1)
リードを実装基板に接続する樹脂封止型半導体装
置の実装方法において、前記樹脂封止型半導体装
置を前記実装基板に配置する前に、前記樹脂封止
型半導体装置全体を乾燥するために、前記ろう材
の溶融温度より低い温度の雰囲気中で前記樹脂封
止型半導体装置を加熱処理する半導体装置の予備
乾燥工程と、しかる後、前記予備乾燥された半導
体装置を前記ろう材を介して前記実装基板に配置
し、前記予備乾燥された半導体装置、前記実装基
板及び該実装基板上のろう材を全体的に前記ろう
材の溶融温度以上の温度の雰囲気中にさらすこと
によつて前記ろう材を溶融させ前記予備乾燥され
た半導体装置の外部リードを前記実装基板に接続
するろう材溶融工程とからなることを特徴とする
半導体装置の実装方法。 2 前記ろう材として半田を用い、前記予備乾燥
工程が、100〜150℃の温度範囲で行われることを
特徴とする特許請求の範囲第1項記載の半導体装
置の実装方法。 3 予備乾燥工程が減圧下で行われることを特徴
とする特許請求の範囲第1項または第2項記載の
半導体装置の実装方法。 4 半導体装置が薄型パツケージからなる半導体
装置であることを特徴とする特許請求の範囲第1
項記載の半導体装置の実装方法。 5 ろう材溶融工程が、赤外線照射加熱方式を採
用することを特徴とする特許請求の範囲第1項記
載の半導体装置の実装方法。 6 ろう材が半田であることを特徴とする特許請
求の範囲第1項ないし第5項のいずれか1項に記
載の半導体装置の実装方法。[Claims] 1. A method for mounting a resin-sealed semiconductor device in which external leads of the resin-sealed semiconductor device are connected to a mounting board via a brazing material, wherein the resin-sealed semiconductor device is mounted on the mounting board. a pre-drying step for the semiconductor device, in which the resin-sealed semiconductor device is heat-treated in an atmosphere at a temperature lower than the melting temperature of the brazing material in order to dry the entire resin-sealed semiconductor device before placement; Thereafter, the pre-dried semiconductor device is placed on the mounting board via the brazing material, and the pre-dried semiconductor device, the mounting board, and the brazing material on the mounting board are entirely covered with the wax. A brazing material melting step of melting the brazing material by exposing it to an atmosphere at a temperature higher than the melting temperature of the material and connecting the external leads of the pre-dried semiconductor device to the mounting board. A method for mounting semiconductor devices. 2. The method of mounting a semiconductor device according to claim 1, wherein solder is used as the brazing material and the preliminary drying step is performed at a temperature range of 100 to 150°C. 3. The semiconductor device mounting method according to claim 1 or 2, wherein the preliminary drying step is performed under reduced pressure. 4 Claim 1, characterized in that the semiconductor device is a semiconductor device consisting of a thin package.
A method for mounting a semiconductor device as described in . 5. The semiconductor device mounting method according to claim 1, wherein the brazing material melting step employs an infrared irradiation heating method. 6. The method for mounting a semiconductor device according to any one of claims 1 to 5, wherein the brazing material is solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081864A JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59081864A JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1159581A Division JPH0256994A (en) | 1989-06-23 | 1989-06-23 | Mounting method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226145A JPS60226145A (en) | 1985-11-11 |
| JPH0317238B2 true JPH0317238B2 (en) | 1991-03-07 |
Family
ID=13758337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59081864A Granted JPS60226145A (en) | 1984-04-25 | 1984-04-25 | Mounting process of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226145A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960015106B1 (en) | 1986-11-25 | 1996-10-28 | 가부시기가이샤 히다찌세이사꾸쇼 | Surface package type semiconductor package |
| JP2551141B2 (en) * | 1989-04-05 | 1996-11-06 | 富士通株式会社 | Method for manufacturing semiconductor device |
| KR970053759A (en) * | 1995-12-29 | 1997-07-31 | 황인길 | Surface repellent treatment method of semiconductor package |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5637718B2 (en) * | 1973-10-31 | 1981-09-02 | ||
| JPS536875A (en) * | 1976-07-09 | 1978-01-21 | Fujitsu Ltd | Method of producing multilayer printed board |
| JPS5329509A (en) * | 1976-08-31 | 1978-03-18 | Toshiba Corp | Rotary electric machine |
| JPS5521127A (en) * | 1978-08-02 | 1980-02-15 | Hitachi Ltd | Method of mounting semiconductor device |
| JPS56167395A (en) * | 1980-05-27 | 1981-12-23 | Mitsubishi Electric Corp | Method of mounting part on circuit board |
| JPS5750496A (en) * | 1980-09-12 | 1982-03-24 | Hitachi Ltd | Method of reflowing soldering paste |
| JPS5754389A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | KAIROKIBANNOHANDAZUKEHOHO |
-
1984
- 1984-04-25 JP JP59081864A patent/JPS60226145A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226145A (en) | 1985-11-11 |
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