JPH0319704B2 - - Google Patents
Info
- Publication number
- JPH0319704B2 JPH0319704B2 JP22269486A JP22269486A JPH0319704B2 JP H0319704 B2 JPH0319704 B2 JP H0319704B2 JP 22269486 A JP22269486 A JP 22269486A JP 22269486 A JP22269486 A JP 22269486A JP H0319704 B2 JPH0319704 B2 JP H0319704B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dicing
- adhesive
- pellets
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体ウエハをダイシングソウによ
り細分化してペレツトを製造する半導体製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor manufacturing method in which pellets are manufactured by dividing a semiconductor wafer into pieces using a dicing saw.
従来の技術
半導体製造工程で半導ウエハを切断して個々の
ペレツトに細分割する工程があり、その一具体例
を第2図及び第3図を参照して次に示す。図にお
いて1は半導体ウエハ(以下、単にウエハと称
す。)2は粘着シート、3は粘着シート2に接
着・形成された粘着層、4はダイシングソウ(又
はダイサと称す。)で上記ウエハ1を装着シート
2に貼り付けた後、ダイシングソウ4によつて
XY方向に完全カツト(スルーカツト)してペレ
ツト1a,1a…に細分割し、その後、各ペレツ
ト1aを粘着シート2により剥離する。上記ダイ
シングソウ4によつてウエハ1を完全カツトする
には、ウエハ1の表面に垂直に回転するプレード
4aを押し付け粘着シート2の一部まで切り込ま
せてウエハ1の表面に平行に移動させる。この
時、粘着層3には、従来、加圧によつて所期の粘
着力が得られる感圧接着剤を用いていたが、ダイ
シング後はペレツトの剥離が困難となる問題があ
つたため近年は紫外線硬化型粘着剤が用いられて
きている。上記紫外線硬化型粘着剤は紫外線照射
によつて照射部分が硬化し、粘着力が低下するも
ので、上記ダイシング終了後、粘着シート2側よ
り紫外線を照射して粘着層3の粘着力を弱くして
ペレツト剥離を容易にする。2. Description of the Related Art In the semiconductor manufacturing process, there is a step of cutting a semiconductor wafer into individual pellets, and a specific example thereof is shown below with reference to FIGS. 2 and 3. In the figure, 1 is a semiconductor wafer (hereinafter simply referred to as a wafer), 2 is an adhesive sheet, 3 is an adhesive layer bonded and formed on the adhesive sheet 2, and 4 is a dicing saw (or referred to as a dicer) used to cut the wafer 1. After pasting it on the mounting sheet 2, use the dicing saw 4 to
The pellets are completely cut (through-cut) in the X and Y directions to be finely divided into pellets 1a, 1a, . In order to completely cut the wafer 1 with the dicing saw 4, the blade 4a rotating perpendicularly to the surface of the wafer 1 is pressed and cut into a part of the adhesive sheet 2, and then moved parallel to the surface of the wafer 1. At this time, for the adhesive layer 3, a pressure-sensitive adhesive has conventionally been used that can obtain the desired adhesive strength by applying pressure, but there was a problem that it was difficult to peel off the pellets after dicing, so Ultraviolet curing adhesives have been used. The irradiated portion of the UV-curable adhesive is cured by UV irradiation, and its adhesive strength decreases.After the dicing is completed, UV rays are irradiated from the adhesive sheet 2 side to weaken the adhesive strength of the adhesive layer 3. to facilitate pellet peeling.
発明が解決しようとする問題点
ところで、上述したウエハ1のダイシング時に
粘着層3はダイシングソウ4に対して大きな摩擦
抵抗となるためブレード4aの寿命が短くなつて
コスト高を招く。又、第4図に示すように、ブレ
ード4aの表面4a1に粘着剤が付着して切れ味が
低下すると共にペレツト1aに対するダイシング
ソウ4の摩擦が大きくなつてダイシング中にペレ
ツト1aがはじき飛ばされる。更にダイシング時
には粘着層3は未硬化状態で弾力性があるためブ
レード4aの切り込みによつてウエハ1に部分的
力がに加わる。そのため、ウエハ1は部分的変形
と復元を繰り返して部分的に微小振動しこの振動
が繰り返されると、粘着力が強くてもダイシング
時にペレツト1aが剥離し易くなる。具体的に裏
面を鏡面仕上げしたウエハを紫外線硬化型粘着シ
ートに20g、15秒間加圧して接着し、2mm角の
ペレツトにハーフカツトしたときに、ペレツトの
傷や割れ、欠けなどの不良率は7.72%で、その
内、割れ、欠けは2.13%を占めていた。Problems to be Solved by the Invention By the way, during the above-described dicing of the wafer 1, the adhesive layer 3 creates a large frictional resistance against the dicing saw 4, which shortens the life of the blade 4a and increases costs. Further, as shown in FIG. 4, the adhesive adheres to the surface 4a1 of the blade 4a, reducing its sharpness and increasing the friction of the dicing saw 4 against the pellets 1a, causing the pellets 1a to be thrown off during dicing. Furthermore, during dicing, since the adhesive layer 3 is elastic in an uncured state, a partial force is applied to the wafer 1 due to the cuts made by the blade 4a. Therefore, the wafer 1 undergoes repeated partial deformation and restoration, resulting in small local vibrations, and when this vibration is repeated, the pellets 1a tend to peel off during dicing even if the adhesive strength is strong. Specifically, when a wafer with a mirror-finished back surface was adhered to an ultraviolet curable adhesive sheet by applying 20 g of pressure for 15 seconds and half-cut into 2 mm square pellets, the defective rate of pellets such as scratches, cracks, and chips was 7.72%. Of these, cracks and chips accounted for 2.13%.
問題点を解決するための手段
本発明は紫外線硬化型粘着層を形成した粘着シ
ートに半導体ウエハを貼り付け、該ウエハをダイ
シングソウにて完全カツトしペレツトに細分割す
る半導体製造方法において、上記半導体ウエハを
貼付け後、少なくとも該ウエハがペレツトに細分
割されるまで粘着シートのウエハ貼り付け部分を
平坦に保ち、かつダイシング作業に先立つて上記
粘着層に紫外線を照射して硬化させるようにした
ことを特徴とする。Means for Solving the Problems The present invention provides a semiconductor manufacturing method in which a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the wafer is completely cut with a dicing saw and finely divided into pellets. After pasting the wafer, the wafer pasting part of the adhesive sheet is kept flat at least until the wafer is subdivided into pellets, and the adhesive layer is irradiated with ultraviolet rays to harden it prior to the dicing operation. Features.
作 用
紫外線硬化型粘着層を有する粘着シートにウエ
ハを貼り付け、粘着シートのウエハ貼り付け部分
を平胆に保つてダイシングに先立つて上記粘着層
を硬化させておくと、ダイシングソウに対する摩
擦抵抗が減少し、かつ、ダイシング時にウエハが
微小振動しない。Effect If a wafer is attached to an adhesive sheet having an ultraviolet curable adhesive layer, and the wafer attachment part of the adhesive sheet is kept flat and the adhesive layer is cured prior to dicing, the frictional resistance against the dicing saw will be reduced. and the wafer does not undergo minute vibrations during dicing.
実施例
本発明に係る半導体製造方法を第1図を参照し
以下説明する。第2図と同一参照符号は同一物を
示す。図において1はウエハ、2は粘着シート、
3は粘着シート2に被着・形成された紫外線硬化
型粘着シートからなる粘着層、4はダイシングソ
ウである。粘着シート2はウエハ1を貼り付けた
後は図示しないが保持リングにより平坦に保た
れ、特に撓みや捩じれが生じないようにしてい
る。EXAMPLE A semiconductor manufacturing method according to the present invention will be described below with reference to FIG. The same reference numerals as in FIG. 2 indicate the same parts. In the figure, 1 is a wafer, 2 is an adhesive sheet,
3 is an adhesive layer made of an ultraviolet curable adhesive sheet adhered to and formed on the adhesive sheet 2, and 4 is a dicing saw. After the wafer 1 is attached to the adhesive sheet 2, it is kept flat by a retaining ring (not shown) to prevent bending or twisting.
上記構成においてウエハ1をダイシングソウ4
にて完全カツトするに際しては、ダイシングに先
立つて粘着シート2側より紫外線5を照射して紫
外線硬化型粘着剤からなる粘着層3を硬化させて
おく。そうすると、粘着層3の粘着力は弱くなる
が、硬化しているためダイシング時にブレート4
aがウエハ1に切り込んでも、切り込みによる力
はウエハ1全面に加わる。そのため、ダイシング
時にブレード4aの切り込むによるウエハ1の微
小変形がなくなり、粘着層3の粘着力が弱くなつ
てもダイシング中にペレツト1aは剥離しにく
い。そして、上記粘着力が弱くなるため粘着層3
によるダイシングソウ4の摩擦抵抗が小さくなつ
てブレード4aの寿命が長くなる。又、粘着層3
は硬化していてダイシング時に粘着剤がブレード
4の表面4aに付着しないためペレツト1aに対
するダイシングソウ4の摩擦が小さくなつてダイ
シング中にペレツト1aがはじき飛ばされない。 In the above configuration, the wafer 1 is placed on the dicing saw 4.
When completely cutting, the adhesive layer 3 made of an ultraviolet curable adhesive is cured by irradiating ultraviolet rays 5 from the adhesive sheet 2 side prior to dicing. In this case, the adhesive force of the adhesive layer 3 becomes weaker, but since it is hardened, the plate 4
Even if a cuts into the wafer 1, the force due to the cut is applied to the entire surface of the wafer 1. Therefore, there is no slight deformation of the wafer 1 due to the cuts made by the blade 4a during dicing, and even if the adhesive force of the adhesive layer 3 becomes weak, the pellets 1a are difficult to peel off during dicing. Then, since the adhesive force becomes weaker, the adhesive layer 3
The frictional resistance of the dicing saw 4 due to this decreases, and the life of the blade 4a becomes longer. Also, adhesive layer 3
is hardened and the adhesive does not adhere to the surface 4a of the blade 4 during dicing, so the friction of the dicing saw 4 against the pellets 1a is reduced and the pellets 1a are not thrown off during dicing.
硬化した粘着層3とウエハ1との間の接着力
は、裏面を鏡面仕上げしたウエハを粘着シートに
20g、15秒間加圧して接着したときの初期粘着力
が40gであつたものが、放射照度50mW/cm2の紫
外線光源にて照射エネルギー100mJ/cm2で20g
に低減し、1000mJ/cm2では10gに低減する。 The adhesive force between the cured adhesive layer 3 and the wafer 1 is determined by using a wafer with a mirror-finished back surface as an adhesive sheet.
An item whose initial adhesive force was 40 g when bonded by applying pressure for 15 seconds at 20 g will become 20 g when irradiated with an ultraviolet light source with an irradiance of 50 mW/cm 2 and an irradiation energy of 100 mJ/cm 2
and 10g at 1000mJ/ cm2 .
一方、横ずれに対する接着強度は未照射状態で
260gであつたものが、100mJ/cm2で300gに、
1000mJ/cm2で400gになり、横ずれに対する強
度は粘着力とは逆に紫外線照射により増加する。 On the other hand, the adhesive strength against lateral shear was measured in the unirradiated state.
260g becomes 300g at 100mJ/ cm2 ,
It becomes 400g at 1000mJ/cm 2 , and the strength against lateral slippage increases with ultraviolet irradiation, contrary to the adhesive strength.
その結果、本発明により完全カツトされたペレ
ツトの不良率は0.71%で、その内、割れや欠けは
0.07%に低減した。 As a result, the defect rate of pellets completely cut by the present invention was 0.71%, of which there were no cracks or chips.
It decreased to 0.07%.
発明の効果
本発明によれば、紫外線硬化型粘着層を形成し
た粘着シートに半導体ウエハを貼り付けてダイシ
ングに先立つて上記粘着剤に紫外線を照射して硬
化させるようにしたから、ダイシング中にペレツ
トが剥離しにくく、又、ダイシングソウによつて
ペレツトがはじき飛ばされなくなつて歩留りが向
上する。更に、ダイシングソウの寿命が長くなつ
てコスト低減化を図れる。Effects of the Invention According to the present invention, a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the adhesive is cured by irradiating ultraviolet rays prior to dicing. The pellets are less likely to peel off, and the pellets are not thrown off by the dicing saw, improving yield. Furthermore, the life of the dicing saw is extended, and costs can be reduced.
第1図は本発明に係る半導体製造方法の一適用
例を示すダイシング時の半導体ウエハの側断面
図、第2図と第3図は従来の半導体製造方法によ
つて製造されるダイシング時の半導体ウエハの
XY方向から見た各側断面図、第4図はダイシン
グ中の半導体ウエハの部分側断面図である。
1……半導体ウエハ、1a……ペレツト、2…
…粘着シート、3……粘着層、4……ダイシング
ソウ、5……紫外線。
FIG. 1 is a side cross-sectional view of a semiconductor wafer during dicing showing an application example of the semiconductor manufacturing method according to the present invention, and FIGS. 2 and 3 are semiconductors during dicing manufactured by a conventional semiconductor manufacturing method. of wafer
Each side sectional view seen from the XY direction, FIG. 4 is a partial side sectional view of the semiconductor wafer during dicing. 1...Semiconductor wafer, 1a...Pellet, 2...
... Adhesive sheet, 3... Adhesive layer, 4... Dicing saw, 5... Ultraviolet rays.
Claims (1)
半導体ウエハを貼り付け、該ウエハをダイシング
ソウにて完全カツトしペレツトに細分割する半導
体製造方法において、上記半導体ウエハを貼り付
け後、少なくとも該ウエハがペレツトに細分割さ
れるまで粘着シートのウエハ貼り付け部分を平坦
に保ち、かつダイシング作業に先立つて上記粘着
層に紫外線を照射して硬化させるようにしたこと
を特徴とする半導体製造方法。1. In a semiconductor manufacturing method in which a semiconductor wafer is attached to an adhesive sheet on which an ultraviolet curable adhesive layer is formed, and the wafer is completely cut with a dicing saw and finely divided into pellets, after the semiconductor wafer is attached, at least the wafer is A semiconductor manufacturing method characterized in that a portion of the adhesive sheet to which the wafer is attached is kept flat until it is finely divided into pellets, and the adhesive layer is cured by irradiating ultraviolet rays prior to dicing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61222694A JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61222694A JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6378547A JPS6378547A (en) | 1988-04-08 |
| JPH0319704B2 true JPH0319704B2 (en) | 1991-03-15 |
Family
ID=16786451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61222694A Granted JPS6378547A (en) | 1986-09-20 | 1986-09-20 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6378547A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332269A (en) * | 2002-05-15 | 2003-11-21 | Renesas Technology Corp | Method for manufacturing semiconductor device |
-
1986
- 1986-09-20 JP JP61222694A patent/JPS6378547A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6378547A (en) | 1988-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4447280B2 (en) | Surface protection sheet and semiconductor wafer grinding method | |
| KR900001812A (en) | Adhesive tape and how to use it | |
| JP3553551B2 (en) | Method of manufacturing semiconductor device using semiconductor wafer | |
| JPH0917752A (en) | Method and apparatus for cutting flat work piece | |
| JP2004193237A (en) | Wafer holding member having pressure-sensitive adhesive sheet and method for peeling pressure-sensitive adhesive sheet | |
| CN103302572B (en) | The method for grinding of plate object | |
| JPH07263382A (en) | Wafer fixing tape | |
| JPH0319704B2 (en) | ||
| JP6013850B2 (en) | Wafer processing method | |
| TWI601643B (en) | Plate affixed to the method | |
| JPH0616527B2 (en) | Adhesive sheet for semiconductor wafer dicing | |
| JP6132502B2 (en) | Wafer processing method | |
| JP2638155B2 (en) | Manufacturing method of semiconductor chip | |
| JP2007088292A (en) | Cutting method of plate member | |
| JPH09283469A (en) | Manufacture of semiconductor device | |
| JP2004031844A (en) | Semiconductor element manufacturing method and semiconductor element manufacturing apparatus | |
| JP2782662B2 (en) | Dicing method | |
| JPH04188847A (en) | Adhesive tape | |
| JP2000164537A (en) | Dicing method | |
| JPS61210650A (en) | Manufacture of semiconductor device | |
| JPH0621219A (en) | Manufacture of semiconductor device | |
| JP6671797B2 (en) | Tape application method | |
| JP2680104B2 (en) | Method for manufacturing semiconductor device | |
| JPH04247640A (en) | Manufacture of semiconductor device | |
| JP2910428B2 (en) | Method for manufacturing semiconductor device |