Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0320072B2 - - Google Patents
[go: Go Back, main page]

JPH0320072B2 - - Google Patents

Info

Publication number
JPH0320072B2
JPH0320072B2 JP59214609A JP21460984A JPH0320072B2 JP H0320072 B2 JPH0320072 B2 JP H0320072B2 JP 59214609 A JP59214609 A JP 59214609A JP 21460984 A JP21460984 A JP 21460984A JP H0320072 B2 JPH0320072 B2 JP H0320072B2
Authority
JP
Japan
Prior art keywords
cooling
bellows
metal
cooling plate
cooling element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59214609A
Other languages
Japanese (ja)
Other versions
JPS61111570A (en
Inventor
Katsuhide Natori
Yukihisa Katsuyama
Tsutomu Iikawa
Isao Kawamura
Takeaki Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59214609A priority Critical patent/JPS61111570A/en
Publication of JPS61111570A publication Critical patent/JPS61111570A/en
Publication of JPH0320072B2 publication Critical patent/JPH0320072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/772Bellows

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は耐久性と冷却能力とに優れた半導体デ
バイス用冷却素子の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing a cooling element for semiconductor devices that has excellent durability and cooling ability.

半導体デバイスにはダイオードやトランジスタ
のように単一な素子からなるものもあるが、IC
やLSIのように複数の素子構成をとるものもあ
り、多数の情報を迅速に処理し、或いは記憶する
電算機のような用途には多素子構成をとる後者の
デバイスが多用されており、また処理容量を増す
方法としてLSIよりも更に多素子構成をとる
VLSIが実用化されている。
Some semiconductor devices consist of a single element such as a diode or transistor, but IC
There are also devices with multiple element configurations such as LSI and LSI, and the latter devices are often used for applications such as computers that rapidly process or store large amounts of information. As a way to increase processing capacity, use a configuration with more elements than LSI.
VLSI has been put into practical use.

本発明はこのような多素子構成をとる半導体デ
バイスに使用される冷却素子の製造方法に関する
ものである。
The present invention relates to a method of manufacturing a cooling element used in a semiconductor device having such a multi-element configuration.

〔従来の技術〕[Conventional technology]

IC、LSIなどの半導体デバイスは今まで素子が
格納されているパツケージの上にフインを設け、
これにフアンにより風を送つてフインを冷却する
強制空冷方式をとることによつてチツプの温度上
昇を抑制している。
Until now, semiconductor devices such as ICs and LSIs had fins placed on top of the package in which the elements were stored.
In addition, a forced air cooling system is used in which a fan blows air to cool the fins, thereby suppressing the temperature rise of the chip.

然し、チツプの素子構成数が増加するに従つて
かかる空冷による冷却方法には限界がある。
However, as the number of elements in a chip increases, there is a limit to the cooling method using air cooling.

すなわち半導体デバイスを含めて各種の部品を
プリント配線基板上に装着するに当つては部品の
専有面積に制限があると同時に部品の実装高さに
も制限がある。
That is, when mounting various components including semiconductor devices on a printed wiring board, there are limitations on the area occupied by the components and at the same time there are limitations on the mounting height of the components.

このためフインの大きさ及び高さが限られ、こ
れから放熱量も自ずから規定されてしまい、チツ
プを最高使用温度以下に保持することは困難とな
る。
For this reason, the size and height of the fins are limited, which naturally limits the amount of heat dissipation, making it difficult to maintain the chip below the maximum operating temperature.

そのために空冷方式に代わつて液冷あるいは水
冷方法が試みられている。
For this reason, attempts have been made to use liquid cooling or water cooling methods instead of air cooling methods.

ここで超伝導素子などの液冷方式については公
知であり、冷媒として液体窒素(N2)、液体ヘリ
ウム(He)などが使用され、ジユア壜タイプの
容器に格納して使用している。
Liquid cooling systems for superconducting elements and the like are well known, and liquid nitrogen (N 2 ), liquid helium (He), and the like are used as refrigerants, and are stored in a bottle-type container.

然し、半導体デバイスの冷却は高電子移動度を
利用するガリウム砒素(GaAs)トランジスタの
ような特殊な用途を別とすればこのような低温を
使用する必要はなく、また電算機などの用途に使
用される半導体デバイスは規模が大きいためにこ
のような冷却方法は現段階では実用的ではない。
However, cooling semiconductor devices does not require such low temperatures, except for special applications such as gallium arsenide (GaAs) transistors that utilize high electron mobility, and it is not necessary to use such low temperatures for cooling semiconductor devices such as computers. Due to the large scale of the semiconductor devices used, such a cooling method is currently not practical.

これらのことから半導体デバイスの上に従来使
用されているフインの代わりに冷却素子を設け、
この中に水を循環させ水冷する方式が最も実際的
で信頼性の高い方法と言える。
For these reasons, we installed a cooling element on top of the semiconductor device instead of the conventional fins.
The most practical and reliable method is to circulate water through the system for water cooling.

ここで従来のベローズを備えた冷却素子は可撓
性を有するベリリウム銅(以下Be・Cu)、ステン
レス銅などを使用したベローズと熱伝導性の良い
銅系金属を使用した冷却板とを半田付けにより接
合する方法か或いは冷却板にベローズと同じ金属
を使用し、溶接により接合する何れかの方法によ
り製造されていた。
Here, conventional cooling elements with bellows are made by soldering a bellows made of flexible beryllium copper (hereinafter referred to as Be/Cu) or stainless steel copper to a cooling plate made of a copper-based metal with good thermal conductivity. The bellows was manufactured by either joining the bellows by welding or by using the same metal as the cooling plate for the bellows.

然し、前者は高い冷却能力が得られる反面、半
田付けなどの方法により形成される接合部の水中
における耐久性と耐蝕性に問題がある。
However, while the former provides a high cooling capacity, there are problems with the durability and corrosion resistance of the joints formed by methods such as soldering in water.

一方、後者は冷却板に例えばBe・Cuを使用し
た場合、純銅(以下純Cu)に較べて熱伝導率が
1/5と低いために充分な冷却能力を発揮できない
という問題がある。
On the other hand, in the case of the latter, for example, when Be.Cu is used for the cooling plate, there is a problem that sufficient cooling capacity cannot be exhibited because the thermal conductivity is as low as 1/5 compared to pure copper (hereinafter referred to as pure Cu).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

以上記したように半導体デバイスの冷却法とし
てベローズを備えて水冷する冷却素子を使用する
場合、冷却板は熱伝導性の良い金属材料を用い、
またベローズとして可撓性を備えた金属を用いて
形成することが望ましいが、接合部の水中におけ
る耐久性と耐蝕性が問題である。
As described above, when using a water-cooled cooling element equipped with bellows as a method of cooling semiconductor devices, the cooling plate is made of a metal material with good thermal conductivity,
Further, although it is desirable to form the bellows using a flexible metal, there are problems with the durability and corrosion resistance of the joint portion in water.

〔問題点を解決するための手段〕[Means for solving problems]

上記の問題は可撓性を備えたベローズ材料と同
じ金属を外周部に、熱伝導性良い金属を中心部と
して接合し、一体成形して作つた冷却板の外周部
に前記可撓性を有するベローズを溶接して形成す
ることを特徴とする冷却素子の製造方法により解
決することができる。
The problem mentioned above is that the outer periphery of the cooling plate is made by integrally molding the same metal as the flexible bellows material on the outer periphery and a metal with good thermal conductivity in the center. This problem can be solved by a method of manufacturing a cooling element characterized by forming the bellows by welding.

〔作用〕 本発明は水溶液中に異種金属からなる接合体を
置くと、耐蝕性の低下が懸念されるが、両者を溶
接して接合する場合は腐食が少ないと云う実験結
果に着目し、これを発展させて純Cuを内側に
Be・Cu或いはステンレス鋼を外側にクラッドし
た円筒状の金属体を作り、これを圧着して一体化
したのち薄板に切断して冷却板を作り、これに
Be・Cu或いはステンレス鋼からなるベローズを
溶接することにより上記の問題を解決し、信頼性
の高い冷却素子を得るものである。
[Function] The present invention focuses on experimental results showing that when a bonded body made of dissimilar metals is placed in an aqueous solution, corrosion resistance may deteriorate, but when the two are joined by welding, there is less corrosion. Developing pure Cu inside
A cylindrical metal body is made with Be/Cu or stainless steel clad on the outside, and this is crimped and integrated, and then cut into thin plates to make a cooling plate.
By welding bellows made of Be/Cu or stainless steel, the above problem is solved and a highly reliable cooling element is obtained.

〔実施例〕〔Example〕

第1図は本発明に係る冷却素子を半導体デバイ
スに装着した状態を示す断面図、また第2図は冷
却板とベローズの構成状態を示す拡大断面図であ
る。
FIG. 1 is a sectional view showing a state in which a cooling element according to the present invention is mounted on a semiconductor device, and FIG. 2 is an enlarged sectional view showing the configuration of a cooling plate and a bellows.

すなわちセラミツクなどから構成される配線基
板1の上に半導体デバイス2がフエイスダウンボ
ンデイングなどの方法で装着されており、この上
に本発明に係る冷却素子3が密着されている。
That is, a semiconductor device 2 is mounted on a wiring board 1 made of ceramic or the like by a method such as face-down bonding, and a cooling element 3 according to the present invention is closely attached thereon.

ここで冷却素子3は底面には冷却板4があり、
これに溶接されてベローズ5があり、このベロー
ズ5は冷却水の注入口6と排出口7を備えた金属
製の蓋8に溶接されている。
Here, the cooling element 3 has a cooling plate 4 on the bottom.
Welded to this is a bellows 5, which is welded to a metal lid 8 having a cooling water inlet 6 and an outlet 7.

ここでベローズ5は本発明の場合、可撓性を備
えたBe・Cu、燐青銅或いはステンレス鋼などか
らなる薄板で形成されている。
In the case of the present invention, the bellows 5 is formed of a flexible thin plate made of Be.Cu, phosphor bronze, stainless steel, or the like.

ここで冷却板4は第2図に示すように熱伝導性
の良い金属9(例えば純Cu)を中央部分にまた
は周辺部には可撓性を備えた金属10(例えば
Be・Cu、燐青銅又はステンレス鋼)を一体化し
たものを使用する。
As shown in FIG. 2, the cooling plate 4 has a metal 9 with good thermal conductivity (for example, pure Cu) in the center part, or a flexible metal 10 (for example, in the peripheral part).
Be/Cu, phosphor bronze or stainless steel) should be used.

ここで純Cuを中央部分に用いる理由は熱伝導
率が0.93cal/cm・sec・℃とBe・Cuの0.17〜
0.26cal/cm・sec・℃やステンレス鋼の
0.038cal/cm・sec・℃に比べて格段に優れてい
ることによる。
Here, the reason why pure Cu is used for the central part is that the thermal conductivity is 0.93cal/cm・sec・℃ and 0.17~ for Be・Cu.
0.26cal/cm・sec・℃ and stainless steel
This is because it is much better than 0.038cal/cm・sec・℃.

ここでCuとBe・Cuを一体化する方法を説明す
ると次のようになる。
Here, the method for integrating Cu and Be/Cu will be explained as follows.

内部が純Cu、外周部がBe・Cuのクラツド棒を
作り、これを直径が20mmに達するまで圧着した後
に切断して厚さが2mmの円板を作り、析出硬化処
理を施すことにより両金属が一体化した冷却板4
が作られる。
A clad rod with pure Cu on the inside and Be/Cu on the outer periphery is made, which is crimped until the diameter reaches 20 mm, then cut to make a 2 mm thick disk, which is then subjected to precipitation hardening treatment to harden both metals. Cooling plate 4 with integrated
is made.

このようにして作つた冷却板4の外周部にこれ
と同種の金属例えばBe・Cuからなるベローズ5
をレーザ或いは電子ビームを用いて溶接する。
A bellows 5 made of the same kind of metal, such as Be or Cu, is attached to the outer periphery of the cooling plate 4 made in this way.
are welded using a laser or electron beam.

なお冷却板4の外周部にステンレス鋼を用いる
際はベローズ5の材質はステンレス鋼である。
Note that when stainless steel is used for the outer peripheral portion of the cooling plate 4, the material of the bellows 5 is stainless steel.

このように冷却板4の底面をCuとし外周部と
ベローズをBe・Cu或いはステンレス鋼を用い溶
接して形成すると耐蝕性の良い冷却素子を作るこ
とができる。
If the bottom surface of the cooling plate 4 is made of Cu and the outer peripheral part and the bellows are welded using Be.Cu or stainless steel, a cooling element with good corrosion resistance can be produced.

以上のように本発明に係る冷却板4とベローズ
の接合を用いて第1図に示すような冷却素子を形
成し、半導体デバイス2へ僅かに加圧して密着さ
せ、冷却水を注入口6から排水口7に循環せしめ
ると効率の良い半導体デバイスの冷却を行うこと
ができる。
As described above, a cooling element as shown in FIG. 1 is formed by using the joining of the cooling plate 4 and the bellows according to the present invention, and the semiconductor device 2 is brought into close contact with the semiconductor device 2 under slight pressure, and cooling water is supplied from the injection port 6. By circulating the water through the drain port 7, semiconductor devices can be efficiently cooled.

〔発明の効果〕〔Effect of the invention〕

以上記したように本発明の実施により冷却効率
が良く、且つ耐久性に優れた冷却素子の形成が可
能になる。
As described above, by carrying out the present invention, it becomes possible to form a cooling element with good cooling efficiency and excellent durability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は半導体デバイスに密着させた冷却素子
の断面図、第2図は冷却素子の冷却板とベローズ
の関係を示す断面構造、である。図において、 2は半導体デバイス、3は冷却素子、4は冷却
板、5はベローズ、である。
FIG. 1 is a cross-sectional view of a cooling element brought into close contact with a semiconductor device, and FIG. 2 is a cross-sectional structure showing the relationship between a cooling plate and a bellows of the cooling element. In the figure, 2 is a semiconductor device, 3 is a cooling element, 4 is a cooling plate, and 5 is a bellows.

Claims (1)

【特許請求の範囲】[Claims] 1 可撓性を備えたベローズ材料と同じ金属を外
周部に、熱伝導性の良い金属を中心部として接合
し、一体成形して作つた冷却板の外周部に前記可
撓性を有するベローズを溶接して形成することを
特徴とする冷却素子の製造方法。
1. The flexible bellows is attached to the outer periphery of a cooling plate made by integrally molding the same metal as the flexible bellows material to the outer periphery and a metal with good thermal conductivity to the center. A method for manufacturing a cooling element, characterized in that the cooling element is formed by welding.
JP59214609A 1984-10-13 1984-10-13 Manufacture of cooling element Granted JPS61111570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59214609A JPS61111570A (en) 1984-10-13 1984-10-13 Manufacture of cooling element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59214609A JPS61111570A (en) 1984-10-13 1984-10-13 Manufacture of cooling element

Publications (2)

Publication Number Publication Date
JPS61111570A JPS61111570A (en) 1986-05-29
JPH0320072B2 true JPH0320072B2 (en) 1991-03-18

Family

ID=16658548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59214609A Granted JPS61111570A (en) 1984-10-13 1984-10-13 Manufacture of cooling element

Country Status (1)

Country Link
JP (1) JPS61111570A (en)

Also Published As

Publication number Publication date
JPS61111570A (en) 1986-05-29

Similar Documents

Publication Publication Date Title
US4254431A (en) Restorable backbond for LSI chips using liquid metal coated dendrites
US6381845B2 (en) Method of manufacturing plate type heat pipe
US5367193A (en) Low cost, thermally efficient, and surface mountable semiconductor package for a high applied power VLSI die
US5864466A (en) Thermosyphon-powered jet-impingement cooling device
US7886809B2 (en) Apparatus and method for passive phase change thermal management
US4908695A (en) Cooling apparatus and semiconductor device employing the same
JPS60160149A (en) Cooling system for integrated circuit device
US20070200226A1 (en) Cooling micro-channels
JPH0320072B2 (en)
JPH0342512B2 (en)
JPS60257156A (en) Heat conductive cooling module device
JPS58199546A (en) Semiconductor cooler
JPH07336077A (en) Heater package cooling structure
JPS6092642A (en) Forced cooling device for semiconductor device
JPS5875860A (en) Liquid-cooled semiconductor device
JPH0617313Y2 (en) Liquid cooled semiconductor package
JP2001165585A (en) Flat heat pipe
JPH0451550A (en) Semiconductor integrated circuit device
JPS63289847A (en) Heat dissipation structure of lsi package
JPS5823462A (en) Cooling method for semiconductor device
JPS6252949A (en) Laminated type ceramic package
JPH04162551A (en) Semiconductor ic device
JPH01125962A (en) Semiconductor module and cooler therefor
JPS60234351A (en) Semiconductor device
JPS60153150A (en) Heat dissipating device