JPH0320838B2 - - Google Patents
Info
- Publication number
- JPH0320838B2 JPH0320838B2 JP57085216A JP8521682A JPH0320838B2 JP H0320838 B2 JPH0320838 B2 JP H0320838B2 JP 57085216 A JP57085216 A JP 57085216A JP 8521682 A JP8521682 A JP 8521682A JP H0320838 B2 JPH0320838 B2 JP H0320838B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- floating gate
- potential
- data
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085216A JPS58203697A (ja) | 1982-05-20 | 1982-05-20 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57085216A JPS58203697A (ja) | 1982-05-20 | 1982-05-20 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58203697A JPS58203697A (ja) | 1983-11-28 |
| JPH0320838B2 true JPH0320838B2 (fr) | 1991-03-20 |
Family
ID=13852372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57085216A Granted JPS58203697A (ja) | 1982-05-20 | 1982-05-20 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58203697A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117498A (ja) * | 1983-11-30 | 1985-06-24 | Toshiba Corp | 不揮発性半導体メモリ装置 |
| US4924437A (en) * | 1987-12-09 | 1990-05-08 | Texas Instruments Incorporated | Erasable programmable memory including buried diffusion source/drain lines and erase lines |
| JP2723247B2 (ja) * | 1988-03-25 | 1998-03-09 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5236475A (en) * | 1975-09-17 | 1977-03-19 | Sanyo Electric Co Ltd | Non-volatile semiconductor memory |
| JPS5587387A (en) * | 1978-12-25 | 1980-07-02 | Toshiba Corp | Prom eraser |
| JPS5759387A (en) * | 1980-09-26 | 1982-04-09 | Toshiba Corp | Semiconductor storage device |
-
1982
- 1982-05-20 JP JP57085216A patent/JPS58203697A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58203697A (ja) | 1983-11-28 |
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