JPH0325509B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a film forming device for forming a film on a sample and an erosion device for corroding the surface of the sample.

[Conventional technology]

As a conventional film forming apparatus, as shown in Japanese Patent Publication No. 63-9585, there is one that forms a film by attaching sputtering particles to a sample.

In addition, as a conventional erosion device, JP-A-63-
As shown in Japanese Patent No. 179084, some sputtering particles corrode the surface of the sample.

[Problem to be solved by the invention]

However, such film forming apparatuses and erosion apparatuses do not have good handling properties.

This invention was made in order to solve the above-mentioned problem, and aims to provide a film forming device and an erosion device with good handling properties.

[Means for Solving the Problems] In order to achieve the above object, in the present invention, a film forming apparatus for forming a film on a sample includes a sputtering chamber, a handle connected to the sputtering chamber, and a sputtering chamber connected to the sputtering chamber. a hollow anode provided in the sputtering chamber; a pair of opposing cathodes provided on both sides of the anode and substantially perpendicular to the center line of the anode; a magnet that forms a parallel magnetic field; a transmission hole provided in one of the opposed cathodes and whose center line passes outside the outer surface of the anode; and a transmission hole provided in the sputtering chamber and whose center line coincides with the center line of the transmission hole. There are provided openings that substantially coincide with each other and a gas introduction pipe that communicates at one end with the sputtering chamber.

Further, in order to achieve the above object, the present invention provides an erosion device for eroding the surface of a sample, which includes a sputtering chamber, a handle connected to the sputtering chamber, and a hollow anode provided in the sputtering chamber. a pair of opposing cathodes provided on both sides of the anode and substantially perpendicular to the center line of the anode; and a magnet provided within the sputtering chamber and forming a magnetic field with lines of magnetic force substantially parallel to the center line of the anode. , a transmission hole provided in one of the opposing cathodes and whose center line passes inside the inner surface of the anode; an opening provided in the sputtering chamber and whose center line substantially coincides with the center line of the transmission hole; A gas introduction pipe whose one end communicates with the sputtering chamber is provided.

[Effect]

In the above film forming apparatus, when a voltage is applied between the anode and the counter cathode after creating a gas atmosphere at an appropriate pressure in the sputtering chamber, a cold cathode discharge is generated between the anode and the counter cathode. The positive ions of the gas thus generated bombard the surface of the counter cathode, sputtering the atoms forming the counter cathode, and the sputtered atoms pass through the transmission hole or opening and adhere to the surface of the sample.

In addition, in the above-mentioned erosion apparatus, after creating a gas atmosphere at an appropriate pressure in the sputtering chamber,
When a voltage is applied between the anode and the counter cathode, a cold cathode discharge occurs between the anode and the counter cathode, and the positive ions of the gas generated thereby impact the surface of the counter cathode, causing the counter cathode to The constituent atoms are sputtered, and the sputtered atoms and positive ions of the gas pass through the permeation holes and openings to impact and erode the surface of the sample.

〔Example〕

FIG. 1 is a sectional view showing a film forming apparatus according to the present invention. In the figure, 1 is a cylindrical sputtering chamber made of soft iron with a thickness of 1 mm, and the outer diameter of the sputtering chamber 1 is 24 mm and the height is 23 mm. 3 is a handle connected to the sputtering chamber 1;
Made of SUS, the outer diameter of the handle 3 is 14 mm, and the inner diameter is 12 mm.
mm, and the handle 3 is connected to a molecular pump vacuum evacuation system (not shown) with an evacuation speed of 50/s. 7
is an anode support fixed within the handle 3, and the anode support 7 is made of Teflon. 9 is an anode lead attached to the anode support 7; 8 is an anode voltage feed line that connects a DC high voltage power source (not shown) to the anode lead 9; It passes through the handle 3. 4 is a cylindrical anode attached to the anode lead 9 and located in the sputtering chamber 1; the anode 4 is made of SUS;
The anode 4 has an outer diameter of 8 mm, an inner diameter of 7 mm, and a length of 4 mm. 5a and 5b are a pair of disk-shaped opposing cathodes provided on both sides of the anode 4, the opposing cathodes 5a and 5b are made of gold, and the opposing cathodes 5a and 5b are provided approximately at right angles to the center line of the anode 4. , opposed cathode 5a,
5b is at ground potential, and the opposing cathodes 5a and 5b have a diameter of 22 mm and a thickness of 0.5 mm. 6a and 6b are NEOMAX (trade name) permanent magnets that are installed in the sputtering chamber 1 and form a magnetic field whose magnetic lines of force are almost parallel to the center line of the anode 4, and the permanent magnets 6a and 6b have a diameter of 18 mm and a thickness. is 3 mm, and the strength of the magnetic field at the center of sputtering chamber 1 is
It is 0.13T. Reference numeral 10 denotes a transmission hole provided in one opposing cathode 5b, and the center line of the transmission hole 10 passes outside the outer surface of the anode 4. 14 is a transmission hole provided in the permanent magnet 6b, and the center line of the transmission hole 14 is aligned with the transmission hole 1.
It almost coincides with the center line of 0. Reference numeral 15 denotes an opening provided in the sputtering chamber 1. The center line of the opening 15 substantially coincides with the center line of the transmission hole 10, and the inner diameter of the opening 15 is 2 mm. 2 is a gas introduction pipe that penetrates the handle 3, and the gas introduction pipe 2 is made of SUS.
The outer diameter of the gas introduction pipe 2 is 3 mm, the inner diameter is 2 mm,
The gas introduction pipe 2 is an inert gas supply device (not shown)
It is connected to the. 12 is a sample made of glass;
11 is a vacuum sealing material provided between the opening 15 and the sample 12.

In this film forming apparatus, the inside of the sputtering chamber 1 is heated to 1×10 ^-4 Pa using a molecular pump vacuum evacuation system.
After evacuating the sputtering chamber 1 to ^a vacuum ^of After creating an argon gas atmosphere of Pa, when a positive potential of 2 kV is applied to the anode 4 using a DC high voltage power supply, a cold cathode discharge is generated between the anode 4 and the opposing cathodes 5a and 5b. Positive ions of argon gas impact the surfaces of the opposing cathodes 5a, 5b, and
Gold atoms are sputtered from b, and some of the sputtered gold atoms pass through the transmission holes 10 and 14 and the opening 15 and adhere to the surface of the sample 12.
The film formation rate in this case was 500 Å/min.

In this way, in this film forming apparatus, since the handle 3 is connected to the sputtering chamber 1,
If the operator holds the handle 3 and operates it, the handling property is good. Further, since the sputtering chamber 1 is made of soft iron and the permanent magnets 6a and 6b are provided in the sputtering chamber 1, the permanent magnets 6
The magnetic lines of force a and 6b do not leak out of the sputtering chamber 1. Furthermore, since the dimensions of the sputtering chamber 1 and the like are small, the sputtering chamber 1 can be inserted into the oral cavity to form a film on the teeth.

FIG. 2 is a sectional view showing the erosion device according to the present invention. In the figure, 16 is a cylindrical anode attached to the anode lead 9 and located in the sputtering chamber 1, and the anode 16 is made of SUS.
The outer diameter of the anode 16 is 8 mm, the inner diameter is 7 mm, and the length is 4 mm.
The center line of the transmission hole 10 passes inside the inner surface of the anode 16. The other configurations are the same as the configuration of the film forming apparatus shown in FIG.

In this erosion apparatus, the inside of the sputtering chamber 1 is evacuated to a vacuum of 1×10 ^-4 Pa by a molecular pump vacuum evacuation system, and then argon gas is introduced into the sputtering chamber 1 from an inert gas supply device through a gas introduction pipe 2. After introducing gas into the sputtering chamber 1 to create an argon gas atmosphere of 2×10 ^-2 to 3×10 ^-2 Pa, the anode 1 is heated by a DC high voltage power source.
6, a cold cathode discharge occurs between the anode 16 and the counter cathodes 5a, 52, and the positive ions of the argon gas generated thereby impact the surfaces of the counter cathodes 5a, 5b. and facing cathode 5a,
Gold atoms are sputtered from 5b, and some of the sputtered gold atoms and positive ions of argon gas pass through the transmission holes 10, 14 and the opening 15,
The surface of the sample 12 is impacted, and the surface of the sample 12 is eroded. The erosion rate in this case was 40 Å/s.

In this way, in this erosion device, the handle 3 is connected to the sputtering chamber 1, so that if the operator holds the handle 3 and operates it, the handling property is good. Further, since the sputtering chamber 1 is made of soft iron and the permanent magnets 6a and 6b are provided in the sputtering chamber 1, the permanent magnets 6a and 6b are provided in the sputtering chamber 1.
The magnetic lines of force 6b do not leak out of the sputtering chamber 1. Furthermore, since the dimensions of the sputtering chamber 1 and the like are small, the sputtering chamber 1 can be inserted into the oral cavity to erode the tooth surface.

FIG. 3 is a sectional view showing a film forming and erosion apparatus according to the present invention. In the figure, reference numeral 17 denotes a movable member mounted inside the handle 3 so as to be movable in the direction of the center line of the handle 3. The movable member 17 is made of iron, and the movable member 17 has an anode support 7a made of Teflon. The anode lead 9 is attached to the anode support 7a. 18 and 19 are stoppers fixed to the handle 3. The other configurations are the same as the configuration of the film forming apparatus shown in FIG.

In this film forming/eroding device, by using a magnet (not shown), a state in which the movable member 17 is in contact with the stopper 18, that is, a state in which the center line of the permeation hole 10 passes outside the outer surface of the anode 4, and a state in which the movable member 17 is in contact with the stopper 18, and If the member 17 is in contact with the stopper 19, that is, the center line of the transmission hole 10 passes inside the inner surface of the anode 4, and the moving member 17 is in contact with the stopper 18, the sample 12 can be A film can be formed, and the surface of the sample 12 can be eroded by bringing the moving member 17 into contact with the stopper 19. Therefore, by eroding the sample 12 and then forming a gold film on the eroded position of the sample 12, the sample 12 can be inlaid with gold.

FIG. 4 is a cross-sectional view showing another film forming and erosion apparatus according to the present invention, and FIG. 5 is a cross-sectional view taken along the line BB in FIG. 4. In the figure, 31 is a handle connected to the sputtering chamber 1, and the handle 31 is made of SUS.
The handle 31 is connected to a molecular pump vacuum evacuation system (not shown). 32 is a gas introduction pipe connected to the sputtering chamber 1, and the gas introduction pipe 32 is made of SUS
The gas introduction pipe 32 is connected to an inert gas supply device (not shown). 33 is the handle 31
34 is a screw shaft rotatably attached to the base 33; 35 is a knob fixed to one end of the screw shaft 34; 36 is a screw shaft 3 attached to the base 33;
The moving member 36 is a moving member attached so as to be movable in the direction of the center line of the moving member 36. The moving member 36 is provided with a female thread, and the female thread is threadedly engaged with the screw shaft 34.
37 is an anode mounting member fixed to the moving member 36;
38 is a bellow provided between the sputtering chamber 1 and the anode mounting member 37; 39 is the anode mounting member 3;
7. An anode lead that penetrates inside the bellows 38. One end of the anode lead 39 is attached to the anode 4 located in the sputtering chamber 1, and the other end of the anode lead 39 is connected to the anode mounting member 37 via an insulating material. and connected to a DC high voltage power supply (not shown). 40 is a cover attached to the handle 31 and the gas introduction pipe 32. The other configurations are the same as the configuration of the film forming apparatus shown in FIG.

In this film formation and erosion device, the knob 35
When the screw shaft 34 is rotated by, the moving member 36,
Since the anode mounting member 37 moves, the anode lead 3
9. Anode 4 moves. Therefore, the transmission hole 10
Since the position of the anode 4 with respect to the center line of the sample 12 can be determined arbitrarily, a film can be formed on the sample 12 and the surface of the sample 12 can be eroded.

FIG. 7 is a sectional view showing a part of an experimental apparatus for the operation of the film forming apparatus and erosion apparatus according to the present invention, and FIG. 8 is a view taken in the direction of arrow A in FIG. 7. In the figure, 26 is an anode lead provided in a vacuum container having a vacuum exhaust pipe and a gas introduction pipe, 22 is a cylindrical anode attached to the anode lead 26, and the outer diameter of the anode 22 is 15
mm, and the inner diameter is 14 mm. 28 and 29 are a pair of opposing cathodes provided on both sides of the anode 22;
8, 29 are made of gold, the opposing cathodes 28, 29 are provided almost at right angles to the center line of the anode 22, the opposing cathodes 28, 29 are at ground potential, and the dimensions of the opposing cathodes 28, 29 are 25 x 25 ×0.2mm. 23
21 is a slit provided in the opposing cathode 28, and 21 is a substrate provided in contact with the opposing cathode 28. A magnetic field approximately parallel to the center line of the anode 22 is formed by a permanent magnet (not shown).

FIG. 9 shows the experimental apparatus shown in FIGS. 7 and 8, using a substrate 21 made of glass, evacuating the inside of the vacuum chamber to a vacuum of 1×10 ^-4 Pa, and then injecting argon gas into the vacuum chamber. By introducing the argon gas into the vacuum chamber, an argon gas atmosphere of 2×10 ^-2 Pa was created, and then a positive potential of 2 kV was applied to the anode 22 using a DC high voltage power supply, and sputtering was continued for 12 minutes with a discharge current of 5 mA. , is a graph showing the results of investigating the corrosion state of the surface of the substrate 21 using a high-sensitivity stylus type surface analyzer, and shows the distance from the center line of the anode 22 and the thickness of the gold thin film 24 deposited on the surface of the substrate 21. It shows the relationship between the thickness and the erosion depth of the recess 25a formed in the substrate 21. As is clear from this graph, a thin gold film 24 with a film thickness of about 2000 Å is formed in a portion corresponding to the substantially outer side of the anode 22, and a recess 25a is formed in a portion corresponding to the substantially inner side of the anode 22. and the recess 25a is the anode 2.
It is deepest near the part corresponding to the edge of No. 2, and its depth is approximately 4000 Å. In this way, the anode 22
The deepest recess 2 near the part corresponding to the edge of
5a is formed because the surface of the substrate 21 is bombarded with positive ions of argon gas;
When 1 is a non-metallic material such as glass, the substrate 21
When the surface of the substrate 21 is bombarded with positive ions of argon gas, the surface is charged, so that the positive ions of argon gas no longer bombards the surface. This is considered to be because the neutral gold atoms having higher energy are bombarded in the vicinity of the portions of the substrate 21 than the neutral gold atoms reaching the portions of the surface of the substrate 21 corresponding to the outside of the anode 22. Therefore, in the erosion apparatus shown in FIG. 2, when the sample is a nonmetallic material, it is desirable that the center line of the transmission hole 10 passes near the edge of the anode 16. Note that when the electric field and magnetic field are changed, the gold thin film 24 and the recess 25
Since the position of the boundary with a changes, it is desirable to set the position of the anode 16 accordingly.

FIG. 10 is a graph showing the results of examining the surface of the substrate 21 in the same manner as described above using the substrate 21 made of metal in the experimental apparatus shown in FIGS. 7 and 8.
It shows the relationship between the distance from the center line of the anode 22, the thickness of the gold thin film 24 deposited on the surface of the substrate 21, and the erosion depth of the recess 25b formed in the substrate 21. As is clear from this graph, the gold thin film 24 is formed in a portion corresponding to the substantially outer side of the anode 22, and the recess 25b is formed in a portion corresponding to the substantially inner side of the anode 22. The portion 25b corresponding to the central portion of the anode 22 is the deepest. In this way, the deepest part of the recess 25b corresponding to the center of the anode 22 is located on the substrate 2.
The surface of the substrate 1 is bombarded with positive ions of argon gas, and if the substrate 21 is made of metal, the surface will not be charged even if it is bombarded with positive ions of argon gas. The positive ions become stronger toward the part corresponding to the center line of the anode 22, and near the part corresponding to the edge of the surface of the substrate 21, bombardment by neutral gold atoms is performed. This is thought to be because the impact caused by positive ions of argon gas is stronger than the impact caused by neutral gold atoms. Therefore, in the erosion apparatus shown in FIG. 2, when the sample is metal, it is desirable that the center line of the transmission hole 10 passes through the center of the anode 16.

In the above embodiment, cylindrical anodes 4 and 16 were used as the hollow anodes, but square cylindrical anodes, cylindrical anodes with a notch parallel to the center line, and two rings may An anode or the like connected by several rods may also be used. Furthermore, in the above embodiment,
Although the opposing cathodes 5a and 5b made of gold were used, Ag,
Opposing cathodes made of metals such as Pt, Ni, and Cr, and semiconductors such as Si and Ge may also be used. Further, in the above embodiment, the sputtering chamber 1 was made to have an argon gas atmosphere, but the sputtering chamber may also be made to have an atmosphere of other inert gas, and when the counter cathode is made of an inert material such as gold, the sputtering chamber may be made of an argon gas atmosphere. An active gas atmosphere may also be used. Further, in the above embodiment, the case where the sample 12 was made of glass was explained, but the sample was made of Ag, Ni, Cr,
The present invention can also be applied to metals such as Ti and Al, semiconductors such as Si and GaAs, and insulators such as diamond, sapphire, and ceramics. Furthermore, by attaching a mask having holes of any shape, such as numbers or shapes, to the opening 15, it is possible to form a film of any shape on the sample 12.
2 can be eroded into any shape, and furthermore, the sample 12 can be inlaid into any shape. Further, in the embodiment shown in FIG. 3, the anode 4 is moved by a magnet, and in the embodiments shown in FIGS. 4 and 5, the anode 4 is moved by a screw shaft 34, etc. The anode 4 may be moved by other means. Furthermore, in the embodiment shown in FIGS. 1 to 3, the handle 3 is provided parallel to a plane perpendicular to the center line of the anodes 4, 16, but as shown in FIG. may be provided at an angle with respect to a plane perpendicular to the center line of the anodes 4, 16.

〔Effect of the invention〕

As explained above, in the film forming apparatus and the erosion apparatus according to the present invention, since the handle is connected to the sputtering chamber, handling properties are good. As described above, the effects of this invention are remarkable.

[Brief explanation of the drawing]

1 is a cross-sectional view showing a film forming apparatus according to the present invention, FIG. 2 is a cross-sectional view showing an erosion apparatus according to the present invention, and FIG. 3 is a cross-sectional view showing a film forming and erosion apparatus according to the present invention. FIG. 4 is a cross-sectional view showing another film forming and erosion apparatus according to the present invention, and FIG. 5 is B of FIG. 4.
-B sectional view, FIG. 6 is a diagram showing the appearance of another film forming apparatus, erosion apparatus, film forming and erosion apparatus according to the present invention, and FIG. 7 is a diagram showing the operation of the film forming apparatus and erosion apparatus according to the present invention. 8 is a cross-sectional view showing a part of the experimental apparatus, FIG. 8 is a view taken in the direction of arrow A in FIG. 7, and FIGS. 9 and 10 are substrates processed by the experimental apparatus shown in FIGS. 7 and 8, respectively. It is a graph showing the results of examining the surface of. 1... sputtering chamber, 2... gas introduction pipe, 3,
3a...shaft, 4...anode, 5a, 5b...opposed cathode,
6a, 6b... Permanent magnet, 10... Transmission hole, 12... Sample, 15... Opening, 16... Anode, 31... Handle, 32
...Gas introduction pipe.

Claims (1)

[Scope of Claims] 1. A film forming apparatus for forming a film on a sample, comprising a sputtering chamber, a handle connected to the sputtering chamber, a hollow anode provided in the sputtering chamber, and both sides of the anode. and a pair of opposing cathodes provided substantially perpendicular to the center line of the anode, a magnet provided within the sputtering chamber and forming a magnetic field with lines of magnetic force substantially parallel to the center line of the anode, and one of the opposing cathodes. a transmission hole provided in the sputtering chamber and whose center line passes outside the outer surface of the anode, an opening provided in the sputtering chamber and whose center line substantially coincides with the center line of the transmission hole, and one end of which is connected to the sputtering chamber. A film forming apparatus characterized by comprising a gas introduction pipe in communication with the film forming apparatus. 2. An erosion device that erodes the surface of a sample, including a sputtering chamber, a handle connected to the sputtering chamber, a hollow anode provided in the sputtering chamber, and a center line of the anode on both sides of the anode. a pair of opposing cathodes provided at substantially right angles to the sputtering chamber; a magnet provided in the sputtering chamber and forming a magnetic field with lines of magnetic force substantially parallel to the center line of the anode; A transmission hole passing inside the inner surface of the anode, an opening provided in the sputtering chamber and having a center line that substantially coincides with the center line of the transmission hole, and a gas introduction pipe having one end communicating with the sputtering chamber. An erosion device characterized by comprising: